JP2013105834A - Manufacturing method of semiconductor device, semiconductor device, and electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of quickly picking up even a semiconductor chip of 15 to 75 μm in thickness using the conventional collet without causing breakage such as cracking or chipping.SOLUTION: A manufacturing method of a semiconductor device includes the steps of: forming a resin film on one surface of a semiconductor wafer; manufacturing a semiconductor chip with a die-bonding film by sticking an adhesive sheet with a die-bonding film to the other surface of the semiconductor wafer and performing dicing; picking up the semiconductor chip with the die bonding film using a collet; and die-bonding the semiconductor chip with the die bonding film onto a wiring board. The semiconductor wafer is 15 to 75 μm in thickness. The modulus of elasticity of the resin film at 25°C is 2 to 10 GPa. The resin film is 3 to 20 μm in thickness.

Description

  The present invention relates to a semiconductor device manufacturing method, a semiconductor device, and an electronic component.

  2. Description of the Related Art In recent years, development of high-density mounting technology for semiconductor devices has been progressing in order to realize a reduction in size and weight, high functionality, and high performance of digital information equipment. In the field of this high-density mounting technology, a stacked package (also called a stacked package) in which a plurality of semiconductor chips are three-dimensionally mounted on a wiring board has been put into practical use. When assembling such a stacked package, a thinly processed semiconductor chip (hereinafter simply referred to as “chip”) is used.

  1 to 9 are schematic views showing a conventional method for mounting such a thin chip on a wiring board. First, as shown in FIGS. 1 and 2, a protective layer 2 (back grind tape) for protecting an integrated circuit is formed on the surface of a semiconductor wafer 1 (hereinafter simply referred to as “wafer”) on which a desired integrated circuit is formed. ). Then, as shown in FIG. 3, the grinder 3 was used for the back surface of the wafer 1 (the surface on which the integrated circuit was not formed) with the wafer 1 turned over so that the surface on which the integrated circuit was formed was down. Polish and etch. Thereby, the thickness of the wafer 1 is reduced (FIG. 4). Subsequently, as shown in FIG. 5 a, a wafer ring 18 is disposed around the wafer 1, and an adhesive sheet (dicing / die bonding integrated film) 6 is attached to the upper side of the wafer 1. Then, as shown in FIG. 5b, the wafer 1 is turned over again so that the surface on which the integrated circuit is formed is on the upper side, and the back grind tape 2 is peeled off. Next, as shown in FIG. 6, dicing is performed using a dicing blade 7 or the like to divide the wafer 1 into a plurality of chips. Thereafter, as shown in FIGS. 7 and 8, the push-up pins 9 and the like are pressed against the back surface of the pressure-sensitive adhesive sheet 6 to peel the chips 14 from the dicing tape 5 one by one, and the chips with the die bonding film removed are colleted. Pick up at 8. Then, this chip is transferred onto the wiring substrate 10 and die-bonded (FIG. 9).

  However, in the process of assembling a stacked package using such thin chips, there is a problem that the chip is likely to be cracked or chipped when the chip divided by dicing is peeled off and picked up. Specifically, when a chip having a reduced thickness and a reduced rigidity is to be picked up by a conventional collet 8, even if the push-up pin 9 is pressed as shown in FIG. There is a problem that the film cannot be peeled off because it deforms in a form that follows the surface of the tape 5 and a sufficient peeling angle cannot be obtained with respect to the surface of the dicing tape 5. On the other hand, if forcible peeling is attempted by increasing the push-up height of the push-up pin or increasing the suction of the collet, there is a tendency that the chip is cracked or chipped. In order to solve such a problem, even a thin chip can be picked up by picking up a chip without using strong suction that leads to damage of the chip. A pickup method used is provided (see Patent Document 1).

JP-A-2005-243834

  However, when picking up using a collet whose bottom is not flat as shown in Patent Document 1, when die-bonding the chip onto the wiring substrate, the end of the chip cannot be sufficiently adhered onto the wiring substrate. There was a case.

  Accordingly, an object of the present invention is to quickly pick up a chip using a conventional collet without causing damage such as cracking and chipping even when a thin semiconductor chip having a thickness of 15 to 75 μm is picked up. A method for manufacturing a semiconductor device is provided.

As a result of intensive studies on the above problems, the present inventors have completed the present invention having the following characteristics.
(1) A step of forming a resin film on one surface of a semiconductor wafer, and an adhesive sheet provided with a die bonding film are bonded to the other surface of the semiconductor wafer, followed by dicing to produce a semiconductor chip with a die bonding film. In the method for manufacturing a semiconductor device, including a step, a step of picking up a semiconductor chip with a die bonding film using a collet, and a step of die bonding the semiconductor chip with a die bonding film onto a wiring substrate. 15 to 75 μm, the resin film has an elastic modulus at 25 ° C. of 2 to 10 GPa, and a film thickness of 3 to 20 μm.
(2) The method of manufacturing a semiconductor device according to the above, wherein the resin film has an elongation at 25 ° C. of 5 to 100%.
(3) The method for manufacturing a semiconductor device as described above, wherein the resin film is a film obtained by curing the resin composition.
(4) The method for producing a semiconductor device as described above, wherein the resin film is a film obtained by heat curing the resin composition at 120 to 280 ° C.
(5) The method for manufacturing a semiconductor device as described above, wherein the resin composition contains at least one selected from the group consisting of polyimide, polyamic acid, polyhydroxyamide, polybenzoxazole, and phenol resin.
(6) The method for manufacturing a semiconductor device as described above, wherein the die bonding film has a thickness of 5 to 30 μm.
(7) The method for manufacturing a semiconductor device as described above, wherein dicing is performed using a blade.
(8) The method of manufacturing a semiconductor device as described above, wherein the step of picking up the semiconductor chip includes a step of pushing up the semiconductor chip with the die bonding film using 4 to 20 push-up pins.
(9) A semiconductor device obtained by the method for manufacturing a semiconductor device described above.
(10) An electronic component obtained by the semiconductor device manufacturing method described above.

  According to the present invention, even when a thin semiconductor chip having a thickness of 15 to 75 μm is picked up, the chip can be quickly picked up using a conventional collet without causing breakage such as cracking or chipping. it can. In addition, according to the present invention, even when a conventional pressure-sensitive adhesive sheet is used, it is possible to quickly pick up without damaging the chip.

FIG. 1 is a perspective view of a semiconductor wafer on which an integrated circuit is formed. FIG. 2 is a side view of the semiconductor wafer. FIG. 3 is a side view showing a grinding process of a semiconductor wafer in a conventional method for manufacturing a semiconductor device. FIG. 4 is a side view of a semiconductor wafer thinned by a semiconductor wafer grinding process in a conventional method of manufacturing a semiconductor device. FIG. 5A is a side view showing a process of attaching a dicing / die bonding integrated film to a semiconductor wafer in a conventional method of manufacturing a semiconductor device. FIG. 5b is a side view showing a state in which the back grind tape of the semiconductor wafer is peeled off in the conventional method for manufacturing a semiconductor device. FIG. 6 is a side view showing a dicing process of a semiconductor wafer in a conventional method for manufacturing a semiconductor device. FIG. 7 is a side view showing a method of peeling a semiconductor chip with a die bonding film from a dicing tape in a conventional method of manufacturing a semiconductor device. FIG. 8 is a side view showing a method of picking up a semiconductor chip with a die bonding film peeled off from a dicing tape in a conventional method of manufacturing a semiconductor device. FIG. 9 is a side view showing a die bonding step of a semiconductor chip in a conventional method for manufacturing a semiconductor device. FIG. 10 is a side view showing a state in which the semiconductor chip cannot be peeled from the dicing tape in the conventional method for manufacturing a semiconductor device. FIG. 11 is a side view showing a state in which a resin film is formed on a semiconductor wafer in the method for manufacturing a semiconductor device according to the present embodiment. FIG. 12 is a side view showing a back grinding process for grinding the back surface of the semiconductor wafer in the method of manufacturing a semiconductor device according to the present embodiment. FIG. 13 is a side view showing the semiconductor wafer in a state where the thickness is reduced by the back line and the process in the method of manufacturing a semiconductor device according to the present embodiment. FIG. 14A is a side view showing a state in which the dicing / die bonding integrated film is attached to the semiconductor wafer in the manufacturing method of the semiconductor device according to the present embodiment. FIG. 14B is a side view showing a state in which the back grind tape is peeled from the semiconductor wafer in the method of manufacturing a semiconductor device according to this embodiment. FIG. 15 is a side view showing a semiconductor wafer dicing step in the method of manufacturing a semiconductor device according to the present embodiment. FIG. 16 is a side view showing a method of peeling a semiconductor chip with a die bonding film from a dicing tape in the method for manufacturing a semiconductor device according to the present embodiment. FIG. 17 is a side view showing a state in which the semiconductor chip with the die bonding film is peeled from the dicing tape in the method for manufacturing a semiconductor device according to the present embodiment. FIG. 18 is a side view showing a state in which a semiconductor chip with a die bonding film is die-bonded to a wiring board in the method for manufacturing a semiconductor device according to the present embodiment. FIG. 19 is a side view showing a state in which the laminated semiconductor chips with die bonding film are wire-bonded to the wiring board and sealed with a sealing resin in the manufacturing method of the semiconductor device according to the present embodiment.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as the case may be. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. In addition, the dimensional ratio in each drawing is exaggerated for the sake of explanation, and does not necessarily match the actual dimensional ratio.

[Method for Manufacturing Semiconductor Device]
The manufacturing method of the semiconductor device of this embodiment includes a step of forming a resin film on one surface of a semiconductor wafer (resin film forming step), and a pressure-sensitive adhesive sheet including a die bonding film and a dicing tape on the other surface of the semiconductor wafer. The semiconductor chip with die bonding film is manufactured (dicing process), the semiconductor chip with die bonding film is picked up using a collet (pickup process), and the semiconductor chip with die bonding film Is a method of manufacturing a semiconductor device including a step of die bonding on a wiring substrate (die bonding step) and a step of manufacturing a stacked package. The semiconductor wafer has a thickness of 15 to 75 μm, Elastic modulus at 25 ° C. is 2 to 10 GPa Film thickness of 3 to 20 [mu] m, a manufacturing method of a semiconductor device. Hereinafter, the resin film according to the present embodiment will be described, and then each process will be described.

[Resin film]
The resin film formed on the surface of the semiconductor wafer has an elastic modulus at 25 ° C. of 2 to 10 GPa, preferably 2.5 to 8 GPa, and more preferably 3 to 5 GPa. If the elastic modulus at 25 ° C. is smaller than 2 GPa, the resin film cannot have sufficient rigidity, and the semiconductor chip is deformed so as to follow the surface of the adhesive sheet when picked up by the collet. Thereby, there is a tendency that a sufficient peeling angle cannot be obtained with respect to the surface of the pressure-sensitive adhesive sheet, and the semiconductor chip with the die bonding film cannot be peeled from the dicing tape. If the elastic modulus at 25 ° C. exceeds 10 GPa, the resin film becomes brittle, and the resin film may be peeled off from the semiconductor wafer or the resin film may be broken. Further, since the warp of the chip becomes too large due to the resin film, it tends to be difficult to pick up with a collet.

  Here, in this specification, the elastic modulus is the tensile elastic modulus, and can be determined by, for example, performing a tensile test using Autograph AGS-100NH manufactured by Shimadzu Corporation.

  The film thickness of the resin film is 3 to 20 μm, preferably 4 to 15 μm, and more preferably 5 to 10 μm. If the thickness of the resin film is smaller than 3 μm, sufficient rigidity of the resin film cannot be obtained, and the semiconductor chip is deformed so as to follow the surface of the adhesive sheet when picked up by the collet. Thereby, sufficient peeling angle with respect to the surface of an adhesive sheet cannot be obtained, and there exists a tendency for a semiconductor chip with a die-bonding film to become unable to peel from an adhesive sheet. Further, when the film thickness exceeds 20 μm, the warpage of the semiconductor wafer increases, and thus there is a tendency that the resin film is peeled off from the semiconductor wafer or the semiconductor wafer itself is dropped during transportation of the semiconductor wafer. There is. This is considered to be due to the difference in coefficient of thermal expansion (CTE) between the semiconductor wafer and the resin film.

  Here, the film thickness of the resin film can be measured with a spectroscopic ellipsometer RE-3100 (manufactured by Hitachi High-Tech) or a stylus type surface shape measuring device Dektak V320 Si (manufactured by Veeco).

  The elongation percentage of the resin film is preferably 5 to 100%, more preferably 5 to 90%, and still more preferably 8 to 80%. When the elongation rate is smaller than 5%, the semiconductor chip and the resin film are likely to be cracked due to the deformation of the semiconductor chip due to the push-up at the time of pickup. On the other hand, if it exceeds 100%, the semiconductor chip tends to follow the deformation of the pressure-sensitive adhesive sheet during pick-up, and the semiconductor chip with a die bonding film may not be easily peeled off from the pressure-sensitive adhesive sheet.

  Here, in this specification, the elongation is the elongation at break, and can be determined, for example, by performing a tensile test using Autograph AGS-100NH manufactured by Shimadzu Corporation.

  Such a resin film is obtained by heating and curing the resin composition at 120 to 280 ° C, more preferably 160 to 250 ° C, and still more preferably 160 to 225 ° C. If the heat curing temperature is higher than 280 ° C., the semiconductor wafer may be warped due to the difference in coefficient of thermal expansion (CTE) between the semiconductor wafer and the resin film, which may cause cracking of the wafer. Further, if the resin has a heat curing temperature lower than 120 ° C., the resin does not sufficiently cure, so that sufficient rigidity cannot be given to the resin, and an attempt is made to pick up a semiconductor chip in a pickup process described later. In this case, there is a tendency that the semiconductor chip cannot be peeled off from the adhesive tape even if the push-up pin is pressed.

  In view of the above circumstances, since the thermal expansion coefficient (CTE) of the semiconductor wafer used in the present embodiment is 3 to 10 ppm / ° C., the thermal expansion coefficient of the resin film is 3 to 65 ppm / ° C. Preferably, it is 3-55 ppm / ° C, more preferably 3-40 ppm / ° C. The thermal expansion coefficient can be measured using, for example, TMA / SS6000 (manufactured by Seiko Instruments).

  In addition, the glass transition temperature (Tg) of the resin film is preferably 100 to 400 ° C. and 150 to 350 ° C. from the viewpoint of giving sufficient mechanical properties to the resin film when heated in the die bonding step. Is more preferable, and it is further more preferable that it is 180-300 degreeC. In addition, a glass transition temperature can be measured using TMA / SS6000 (made by Seiko Instruments), for example.

  Such a resin composition is not particularly limited as long as the elastic modulus of the cured resin film is 2 to 10 GPa, but from the viewpoint of heat resistance and mechanical properties, polyimide, polyamic acid (polyimide precursor), polybenzo It is preferable to contain at least one resin selected from the group consisting of oxazole, polyhydroxyamide (polybenzoxazole precursor) and phenol resin. Usually, these resins are preferably used as a resin composition to which a photosensitive agent, a crosslinking agent, an acid generator, a solvent and the like are added.

  Of these resins, from the viewpoint of mechanical properties, it is preferable to use polyamic acid (polyimide precursor), polyhydroxyamide (polybenzoxazole precursor), and phenol resin, which can be cured at a low temperature and have a good elastic modulus. From the viewpoint of giving, it is preferable to use a phenol resin.

（式中、Ｘは二価の有機基、単結合、−Ｏ−又は−ＳＯ_２−を示し、Ｙは四価の有機基を示す。Ｒは水素原子又は１価の有機基を示す。） As the polyamic acid, for example, those represented by the following general formula (I) can be used.

(In the formula, X represents a divalent organic group, a single bond, —O— or —SO ₂ —, Y represents a tetravalent organic group, and R represents a hydrogen atom or a monovalent organic group.)

  Polyamic acid can be generally synthesized by reacting tetracarboxylic dianhydride or its derivative with diamines in an organic solvent.

  As tetracarboxylic dianhydride, pyromellitic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,3,3 ′, 4′-biphenyltetracarboxylic dianhydride 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride, 3,3 ′, 4,4′-biphenyl ether Tetracarboxylic dianhydride (4,4′-oxydiphthalic acid), 3,3 ′, 4,4′-diphenylsulfone tetracarboxylic dianhydride, 1,2,3,4-cyclopentanetetracarboxylic dianhydride 1,2,5,6-naphthalene tetracarboxylic dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride, 1,4,5,8-naphthalene tetracarboxylic dianhydride, 2, 3, 5 6-pyridinetetracarboxylic dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 3,3 ′, 4,4′-diphenylsulfonetetracarboxylic dianhydride, 3,3 ′, Aromatic tetracarboxylic dianhydrides such as 4,4′-tetraphenylsilanetetracarboxylic dianhydride and 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride These can be used alone or in combination of two or more.

  Examples of diamines include aromatic diamines, aliphatic diamines, and alicyclic diamines. Specifically, 2,5-diaminobenzoic acid, 3,4-diaminobenzoic acid, 3,5-diaminobenzoic acid, 2,5-diaminoterephthalic acid, 2,2-dimethylbenzidine, bis (4-amino- 3-carboxyphenyl) methylene, bis (4-amino-3-carboxyphenyl) ether, 4,4-diamino-3,3′-dicarboxybiphenyl, 4,4′-diamino-5,5′-dicarboxy- 2,2′-dimethylbiphenyl, 1,3-diamino-4-hydroxybenzene, 1,3-diamino-5-hydroxybenzene, 3,3′-diamino-4,4′-dihydroxybiphenyl, 4,4′- Diamino-3,3′-dihydroxybiphenyl, bis (3-amino-4-hydroxyphenyl) propane, bis (4-amino-3-hydroxyphenyl) propyl Bread, bis (3-amino-4-hydroxyphenyl) sulfone, bis (4-amino-3-hydroxyphenyl) sulfone, bis (3-amino-4-hydroxyphenyl) ether, bis (4-amino-3-hydroxy) Phenyl) ether, bis (3-amino-4-hydroxyphenyl) hexafluoropropane, bis (4-amino-3-hydroxyphenyl) hexafluoropropane, 1,4-diaminocyclohexane, 1,1,3,3,- Examples thereof include tetramethyl 1,3-bis (4-aminophenyl) disiloxane and poly (propylene glycol) diamine, and these can be used alone or in combination of two or more.

（但し、Ｒ¹⁰、Ｒ¹¹及びＲ¹²は、水素原子、アルキル基、フェニル基、ビニル基及びプロペニル基からなる群よりそれぞれ独立に選択された基であり、Ｒ¹³は２価の有機基を示す。なお、アルキル基としては炭素原子数１〜４のものが好ましい。また、Ｒ¹³で示される２価の有機基としては、メチレン基、エチレン基及びプロピレン基等の炭素原子数１〜４のアルキレン基が好ましい。） In addition, when R is a monovalent organic group in the general formula (I), it is preferable that R is an organic group represented by the following general formula because high sensitivity can be imparted.

(However, R ¹⁰ , R ¹¹ and R ¹² are groups independently selected from the group consisting of a hydrogen atom, an alkyl group, a phenyl group, a vinyl group and a propenyl group, and R ¹³ represents a divalent organic group. The alkyl group preferably has 1 to 4 carbon atoms, and the divalent organic group represented by R ¹³ has 1 to 4 carbon atoms such as methylene group, ethylene group and propylene group. Are preferred.)

  As an organic solvent for synthesizing the polyamic acid, N-methyl-2-pyrrolidone, N-methyl-2-pyridone, N, N-dimethylacetamide, N, N-dimethylformamide and the like can be used.

（式中、Ｕは二価の有機基、単結合、−Ｏ−又は−ＳＯ_２−を示し、Ｖは二価の有機基を示す。） As the polyhydroxyamide, for example, those represented by the following general formula (II) can be used. In addition, it is preferable to use the resin composition containing polyhydroxyamide from a viewpoint that it is excellent in heat resistance, chemical resistance and mechanical properties, and is excellent in solubility in an alkaline aqueous solution.

(In the formula, U represents a divalent organic group, a single bond, —O— or —SO ₂ —, and V represents a divalent organic group.)

  In the structural unit represented by the general formula (II), a hydroxy group and an amide group bonded on the same benzene ring are oxazole having excellent heat resistance, mechanical properties, and electrical properties by dehydration ring closure in the heating step. Converted to a ring.

  Polyhydroxyamides can generally be synthesized from dicarboxylic acids and diamines having a hydroxy group. Specifically, it can be synthesized by converting a dicarboxylic acid into a dihalide derivative and then reacting with a diamine. As the dihalide derivative, a dichloride derivative is preferable.

  As a method of synthesizing a dichloride derivative, it can be synthesized by reacting a dicarboxylic acid and a halogenating agent in a solvent or reacting in an excess halogenating agent and then distilling off the excess. As the halogenating agent, thionyl chloride, phosphoryl chloride, phosphorus oxychloride, phosphorus pentachloride, etc., which are used in the usual acid chlorideation reaction of carboxylic acid can be used. As the reaction solvent, N-methyl-2-pyrrolidone, N-methyl-2-pyridone, N, N-dimethylacetamide, N, N-dimethylformamide, toluene, benzene and the like can be used.

  When the reaction is carried out in a solvent, the amount of these halogenating agents used is preferably 1.5 to 3.0 mol, more preferably 1.7 to 2.5 mol, relative to the number of moles of the dicarboxylic acid derivative. . Moreover, when making it react in a halogenating agent, 4.0-50 mol is preferable and 5.0-20 mol is more preferable. The reaction temperature is preferably -10 to 70 ° C, more preferably 0 to 20 ° C.

  The reaction between the dichloride derivative and the diamine is preferably performed in an organic solvent in the presence of a dehydrohalogenating agent. As the dehydrohalogenating agent, organic bases such as pyridine and triethylamine can be used. As the organic solvent, N-methyl-2-pyrrolidone, N-methyl-2-pyridone, N, N-dimethylacetamide, N, N-dimethylformamide, and the like can be used. The reaction temperature is preferably −10 to 30 ° C., more preferably 0 to 20 ° C.

  Diamines include 3,3′-diamino-4,4′-dihydroxybiphenyl, 4,4′-diamino-3,3′-dihydroxybiphenyl, bis (3-amino-4-hydroxyphenyl) sulfone, bis ( 4-amino-3-hydroxyphenyl) sulfone, 2,2-bis (3-amino-4-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 2,2-bis (4 -Amino-3-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 2,2-bis (3-amino-4-hydroxyphenyl) propane and 2,2-bis (4- Amino-3-hydroxyphenyl) propane and the like, but is not limited thereto. These diamines can be used alone or in combination of two or more.

  Examples of dicarboxylic acids include isophthalic acid, terephthalic acid, 2,2-bis (4-carboxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 4,4′-dicarboxybiphenyl, 4, 4′-diphenyl ether dicarboxylic acid, 4,4′-dicarboxytetraphenylsilane, bis (4-carboxyphenyl) sulfone, 2,2-bis (p-carboxyphenyl) propane, 5-tert-butylisophthalic acid, 5- Bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6-naphthalenedicarboxylic acid, malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n-butylmalonic acid, succinic acid, Tetrafluorosuccinic acid, methylsuccinic acid, 2,2-dimethylsuccinic acid, 2, -Dimethyl succinic acid, dimethyl methyl succinic acid, glutaric acid, hexafluoroglutaric acid, 2-methyl glutaric acid, 3-methyl glutaric acid, 2,2-dimethyl glutaric acid, 3,3-dimethyl glutaric acid, 3- Ethyl-3-methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipic acid, pimelic acid, 2,2,6,6-tetramethylpimelic acid, suberic acid, dodecafluorosuberic acid, azelaic acid, Sebacic acid, hexadecafluorosebacic acid, 1,9-nonanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, hexadecanedioic acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosane Diacid, heneicosane diacid, docosane diacid, tricosane diacid, tetracosane diacid Examples include, but are not limited to, pentacosanedioic acid, hexacosanedioic acid, heptacosandioic acid, octacosanedioic acid, nonacosandioic acid, triacontanedioic acid hentriacontanedioic acid, dotriacontanedioic acid, and diglycolic acid. It is not a thing. These compounds can be used alone or in combination of two or more.

  The molecular weight of the polyamic acid and polyhydroxyamide is preferably 3000 to 200000 in terms of weight average molecular weight, more preferably 5000 to 100,000, and still more preferably 10,000 to 50000. Here, the weight average molecular weight is a value obtained by measuring by a gel permeation chromatography method and converting from a standard polystyrene calibration curve.

  From the viewpoint that curing can be performed at a low temperature (for example, 225 ° C. or lower), it is preferable to use a resin composition containing a phenol resin, and it is more preferable to use a resin composition containing a novolac type phenol resin.

  The phenol resin is a polycondensation product of phenol or a derivative thereof and aldehydes. The polycondensation is performed in the presence of a catalyst such as an acid or a base. A phenol resin obtained when an acid catalyst is used is particularly referred to as a novolak type phenol resin. Specific examples of novolak type phenol resins include phenol / formaldehyde novolak resins, cresol / formaldehyde novolak resins, xylenol / formaldehyde novolak resins, resorcinol / formaldehyde novolak resins and phenol-naphthol / formaldehyde novolak resins.

  Examples of the phenol derivative used to obtain the phenol resin include o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol, p- Butylphenol, 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol and 3,4 Alkylphenols such as 1,5-trimethylphenol; alkoxyphenols such as methoxyphenol and 2-methoxy-4-methylphenol; alkenylphenols such as vinylphenol and allylphenol; aralkylphenols such as benzylphenol; Alkylcarbonylphenol such as nylphenol; Arylcarbonylphenol such as benzoyloxyphenol; Halogenated phenol such as chlorophenol; Polyhydroxybenzene such as catechol, resorcinol and pyrogallol; Bisphenol such as bisphenol A and bisphenol F; α- or β- Naphthol derivatives such as naphthol; hydroxyalkylphenols such as p-hydroxyphenyl-2-ethanol, p-hydroxyphenyl-3-propanol and p-hydroxyphenyl-4-butanol; hydroxyalkylcresols such as hydroxyethylcresol; monoethylene of bisphenol Alcoholic hydroxyl group-containing phenols such as oxide adducts and bisphenol monopropylene oxide adducts Conductor: containing carboxyl groups such as p-hydroxyphenylacetic acid, p-hydroxyphenylpropionic acid, p-hydroxyphenylbutanoic acid, p-hydroxycinnamic acid, hydroxybenzoic acid, hydroxyphenylbenzoic acid, hydroxyphenoxybenzoic acid and diphenolic acid Phenol derivatives; and the like. A methylolated product of a phenol derivative such as bishydroxymethyl-p-cresol may be used as the phenol derivative.

  Furthermore, the phenol resin may be a product obtained by polycondensing the above-described phenol or phenol derivative with an aldehyde together with a compound other than phenol such as m-xylene. In this case, the molar ratio of the compound other than phenol to the phenol derivative used for the condensation polymerization is preferably less than 0.5.

  Compounds other than the above-described phenol derivatives and phenol compounds are used singly or in combination of two or more.

  Aldehydes used to obtain phenolic resins are formaldehyde, acetaldehyde, furfural, benzaldehyde, hydroxybenzaldehyde, methoxybenzaldehyde, hydroxyphenylacetaldehyde, methoxyphenylacetaldehyde, crotonaldehyde, chloroacetaldehyde, chlorophenylacetaldehyde, glyceraldehyde, glyoxylic acid, It is selected from methyl glyoxylate, phenyl glyoxylate, hydroxyphenyl glyoxylate, formyl acetic acid, methyl formyl acetate, 2-formylpropionic acid and methyl 2-formylpropionate. Formaldehyde precursors such as paraformaldehyde and trioxane, and ketones such as acetone, pyruvic acid, repric acid, 4-acetylbutyric acid, acetone dicarboxylic acid, and 3,3′-4,4′-benzophenone tetracarboxylic acid May be used in the reaction. These are used singly or in combination of two or more.

  The weight average molecular weight of the phenol resin may be 500 to 150,000 in consideration of solubility in an alkaline aqueous solution and a balance between photosensitive properties (sensitivity and resolution) and mechanical properties (breaking elongation, elastic modulus and residual stress). Preferably, it is 500 to 100,000, more preferably 1000 to 50,000.

  The resin composition used in this embodiment preferably contains a photosensitizer together with the above-described resins such as polyhydroxyamide and phenol resin. The photosensitive agent here is a resin composition coated on a substrate, and when the formed photosensitive resin film is irradiated with light, it reacts with the light and is soluble in the developer in the irradiated and unirradiated areas. It has a function to give a difference to. Although there is no restriction | limiting in particular in a photosensitive agent, It is preferable that it generates an acid or a radical by light.

  Examples of such a photosensitizer include o-quinonediazide compounds, aryldiazonium salts, diaryliodonium salts, and triarylsulfonium salts.

  The content of the photosensitive agent in the resin composition is preferably 5 to 100 parts by weight, preferably 8 to 80 parts by weight with respect to 100 parts by weight of the resin, from the viewpoint of improving the difference in dissolution rate and sensitivity between the exposed part and the unexposed part. Part is more preferred.

  The resin composition preferably contains a solvent. Solvents include γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, benzyl acetate, n-butyl acetate, ethoxyethyl propionate, 3-methylmethoxypropionate, N-methyl-2-pyrrolidone, N, N -Dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, hexamethylphosphorylamide, tetramethylene sulfone, cyclohexanone, cyclopentanone, diethyl ketone, diisobutyl ketone, methyl amyl ketone, and the like. There is no particular limitation as long as other components can be sufficiently dissolved. Among these, from the viewpoint of excellent solubility of each component and applicability during resin film formation, γ-butyrolactone, ethyl lactate, N-methyl-2-pyrrolidone, propylene glycol monomethyl ether acetate, N, N-dimethylformamide and N, It is preferable to use N-dimethylacetamide.

  These solvents can be used alone or in combination of two or more. The amount of the solvent to be used is not particularly limited, but it is generally preferable that the content of the solvent in the resin composition is adjusted to 20 to 90 parts by mass with respect to 100 parts by mass of the resin.

  The resin composition preferably contains a crosslinking agent. The cross-linking agent reacts with the alkali-soluble resin (cross-linking reaction) or polymerizes itself in the step of applying the resin composition or the step of heat treatment after exposure and development if necessary. Thereby, even when the resin composition is cured at a relatively low temperature (for example, 225 ° C. or less), good mechanical properties, chemical resistance, and flux resistance can be imparted. Since the cured resin film has good mechanical properties, the semiconductor chip can be provided with sufficient rigidity and can be picked up without damaging the semiconductor chip.

（式中、Ｘは単結合、−Ｏ−、−ＳＯ_２−又は１〜４価の有機基を示し、Ｒ^１１は水素原子又は一価の有機基を示し、Ｒ^１２は一価の有機基を示す。ｎは１〜４の整数であり、ｐは１〜４の整数であり、ｑは０〜３の整数である。） Examples of the crosslinking agent include compounds represented by the following general formulas (VI), (VII), (VIII), (IX), and (X).

(Wherein X represents a single bond, —O—, —SO ₂ — or a monovalent to tetravalent organic group, R ¹¹ represents a hydrogen atom or a monovalent organic group, and R ¹² represents a monovalent organic group. N is an integer of 1 to 4, p is an integer of 1 to 4, and q is an integer of 0 to 3.)

（式中、Ｙは各々独立に水素原子、炭素原子数１〜１０のアルキル基、水素原子の一部又は全部がフッ素原子で置換された炭素原子数１〜１０のフルオロアルキル基、水素原子の一部がヒドロキシル基で置換された炭素原子数１〜１０のヒドロキシアルキル基、又は炭素原子数１〜１０のアルコキシ基を示し、Ｒ^１３及びＲ^１４は各々独立に一価の有機基を示し、Ｒ^１５及びＲ^１６は各々独立に水素原子又は一価の有機基を示す。ｒ及びｔは各々独立に１〜３の整数であり、ｓ及びｕは各々独立に０〜３の整数である）

Wherein Y is independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a fluoroalkyl group having 1 to 10 carbon atoms in which part or all of the hydrogen atoms are substituted with fluorine atoms, A partially substituted hydroxyalkyl group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms, R ¹³ and R ¹⁴ each independently represents a monovalent organic group, R ¹⁵ and R ¹⁶ each independently represent a hydrogen atom or a monovalent organic group, r and t are each independently an integer of 1 to 3, and s and u are each independently an integer of 0 to 3)

（式中、Ｒ^１７及びＲ^１８は各々独立に水素原子又は一価の有機基を示し、Ｒ^１８は互いが結合することで環構造となっていてもよい。）

(Wherein R ¹⁷ and R ¹⁸ each independently represent a hydrogen atom or a monovalent organic group, and R ¹⁸ may be bonded to each other to form a ring structure.)

（式中、Ｒ^１７は各々独立に水素原子又は一価の有機基を示し、Ｒ^１７は互いが結合することで環構造となっていてもよい。）

(In the formula, each R ¹⁷ independently represents a hydrogen atom or a monovalent organic group, and R ¹⁷ may be bonded to each other to form a ring structure.)

（式中、Ｒ^１９、Ｒ^２０、Ｒ^２１、Ｒ^２２、Ｒ^２３及びＲ^２４は各々独立に水素原子、メチロール基又はアルコキシメチル基を示す。）

(In the formula, R ¹⁹ , R ²⁰ , R ²¹ , R ²² , R ²³ and R ²⁴ each independently represent a hydrogen atom, a methylol group or an alkoxymethyl group.)

  In general formulas (VI), (VII), (VIII), (IX), and (X), the monovalent organic group may be an alkyl group, alkoxy group, or hydroxyalkyl having 1 to 10 carbon atoms. A group and a hydroxyalkoxy group and those in which part or all of the hydrogen atoms are substituted with halogen atoms are preferred. Among these, it is preferable to use a compound represented by the general formula (IX) because a cured film having excellent chemical resistance can be obtained when the resin composition is cured at a low temperature of 200 ° C. or lower.

  The content of the crosslinking agent in the resin composition is preferably 1 to 50 parts by mass with respect to 100 parts by mass of the resin from the viewpoints of development time, allowable width of the unexposed part remaining film rate, and cured film properties. Moreover, from the viewpoint of expressing good chemical resistance and flux resistance of the cured film when the resin composition is cured at 250 ° C. or lower, the content of the crosslinking agent is 15 to 50 parts by mass with respect to 100 parts by mass of the resin. It is more preferable that it is 20-50 mass parts.

  The resin composition may further contain components such as a silane coupling agent, a dissolution accelerator, a dissolution inhibitor, a surfactant, or a leveling agent as necessary.

[Resin film forming process]
In the resin film forming step, the resin film 13 is formed on one surface (the surface on which the integrated circuit is formed) of the semiconductor wafer 1 using the above-described resin composition as shown in FIG. This process includes a drying process, a pattern forming process, a back grinding process, and a heating process as necessary.

  In the drying step, an integrated circuit is formed on the surface of the semiconductor wafer 1 made of single crystal silicon according to a known manufacturing method, and then a resin composition is spin-coated using a spinner or the like to form a resin composition film. Next, it is dried using a hot plate, an oven or the like as necessary. The heating temperature at this time is preferably 80 to 150 ° C. This drying process by heating is called pre-baking.

  Subsequently, a pattern is formed on the resin composition film as necessary. The pattern formation process includes an exposure process and a development process. In the exposure step, first, exposure is performed by irradiating the resin composition film with active rays such as ultraviolet rays, visible rays, and radiations through a mask. As an exposure apparatus, for example, an exposure apparatus having a high-pressure mercury lamp or a low-pressure mercury lamp, an I-line stepper capable of irradiation with monochromatic light of 365 nm (i-line), an equilibrium exposure machine, a projection exposure machine, a scanner exposure machine, etc. Can do.

  After the exposure process, a development process is performed. The development step is a step of obtaining a patterned resin composition film by treating the resin composition film after the exposure step with a developer. In general, when a positive type resin composition is used, an exposed portion is removed with a developer, and when a negative type resin composition is used, an unexposed portion is removed with a developer.

  As the developer, alkaline aqueous solutions such as sodium hydroxide, potassium hydroxide, sodium silicate, sodium carbonate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine and tetramethylammonium hydroxide are preferred, and tetra It is preferable to use methylammonium hydroxide. The concentration of these aqueous solutions is preferably 0.1 to 10% by mass. In addition, alcohols or surfactants can be added to the developer and used. Each of these can be contained in an amount of preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the developer.

  Next, a heating step is performed. By heat-treating the resin composition film (in which a pattern is optionally formed), when the resin is a polyamic acid, a dehydrating ring is closed to give an imide ring, and when the resin is a polyhydroxyamide, a dehydrating ring is closed and an oxazole ring is formed. give. At the same time, a resin film in which a crosslinked structure or the like is formed between the functional groups of the resin or between the resin and the crosslinking agent and the resin composition film is cured can be obtained.

  The heating temperature in the heating step is preferably 120 to 280 ° C, more preferably 160 to 250 ° C, and further preferably 160 to 225 ° C. If the temperature is higher than 280 ° C., the semiconductor wafer may be warped due to a difference in coefficient of thermal expansion (CTE) between the semiconductor wafer and the resin film, and the wafer may be cracked. Further, if the temperature is lower than 120 ° C., the resin does not sufficiently cure, so that sufficient rigidity cannot be given to the resin. Even if pressed, the semiconductor chip tends not to be peeled from the adhesive tape.

  Examples of the apparatus used for the heating step include a quartz tube furnace, a hot plate, rapid thermal annealing, a vertical diffusion furnace, an infrared curing furnace, an electron beam curing furnace, and a microwave curing furnace. The heating atmosphere can be selected from the air or an inert atmosphere such as nitrogen. However, it is preferable to perform the heating under nitrogen because the oxidation of the resin composition film can be prevented.

  In addition to using an ordinary nitrogen-substituted oven as the heating device, when using a microwave curing device or a variable frequency microwave curing device, the temperature of the semiconductor wafer or device is kept at, for example, 220 ° C. or lower. It is possible to effectively heat only the resin composition film.

  Note that in the case where curing is performed using microwaves, it is preferable to irradiate the microwaves in pulses while changing the frequency, because standing waves can be prevented and the substrate surface can be heated uniformly.

  The time for dehydrating and ring-closing the resin in the resin composition is the time until the dehydrating and ring-closing reaction sufficiently proceeds, but is generally about 5 hours or less in view of work efficiency. The atmosphere of dehydration ring closure can be selected from the air or an inert atmosphere such as nitrogen. Thus, the resin film 13 is formed on the surface of the semiconductor wafer 1 as shown in FIG.

[Back grinding process]
In the back grinding process, the thickness of the semiconductor wafer 1 is reduced. First, as shown in FIG. 12, a protective layer (back grind tape) 2 for protecting the integrated circuit is formed on the resin film 13 formed on one surface of the semiconductor wafer 1. Then, the semiconductor wafer 1 is turned over so that the surface on which the protective layer 2 is formed is on the lower side, and the semiconductor wafer 1 is fixed to a table called a chuck table. In this state, the back surface (the other surface where the integrated circuit is not formed) of the semiconductor wafer 1 is ground by the grinder 3. Subsequently, the damaged layer on the back surface caused by this grinding is removed by a method such as wet etching, dry polishing, or plasma etching, thereby reducing the thickness of the semiconductor wafer 1 to 100 μm or less, for example, about 15 to 75 μm. . In the processing method such as wet etching, dry polishing, or plasma etching, the processing speed that proceeds in the thickness direction of the semiconductor wafer 1 is slower than the grinding speed by the grinder 3, but the damage given to the semiconductor wafer 1 is reduced by the grinder. In addition to being smaller than the grinding by 3, the damage layer inside the semiconductor wafer 1 generated by grinding by the grinder 3 can be removed, and the semiconductor wafer 1 and the semiconductor chip cut out from the wafer are less likely to be broken. There is. In this way, the semiconductor wafer 1 having a reduced thickness as shown in FIG. 13 is obtained.

[Dicing process]
In the dicing process, the adhesive sheet 6 including the die bonding film 4 and the dicing tape 5 is bonded to the other surface of the semiconductor wafer 1 and dicing is performed to produce a semiconductor chip with a die bonding film. First, as shown in FIG. 14a, a ring-shaped member called a wafer ring (ring frame) 18 is arranged so as to surround the periphery of the semiconductor wafer 1, and the back surface of the semiconductor wafer 1 (the other side on which no integrated circuit is formed). Adhesive sheet (dicing / die bonding integrated film) 6 is affixed to the surface. The wafer ring 18 is used for fixing the adhesive sheet 6. The dicing / die bonding integrated film is a film in which the dicing tape 5 and the die bond film 4 are integrated. As the dicing / die bonding integrated film, for example, High Attachment FH-9011 (manufactured by Hitachi Chemical Co., Ltd.) or the like can be used.

  In addition, it is preferable that the die bonding film 4 in the adhesive sheet 6 is 5-30 micrometers in thickness, It is more preferable that it is 5-25 micrometers, It is further more preferable that it is 5-20 micrometers. If the thickness is less than 5 μm, the level difference embedding on the substrate and the chip surface becomes poor, so that there is a tendency for the reliability to deteriorate such as voids. If the thickness exceeds 30 μm, the dicing property and pick-up property Tend to get worse.

  Next, as shown in FIG. 14b, the semiconductor wafer 1 is turned over again so that the surface of the semiconductor wafer 1 on which the integrated circuit is formed is on the upper side, and the back grind tape 2 is removed. Next, as shown in FIG. 15, the semiconductor wafer 1 is divided into chips divided by scribe lines. Dicing is preferably performed using a blade (blade dicing), but can also be performed using laser full cut dicing, laser stealth dicing, or the like. The above-described back grinding process can also be performed after cutting the scribe line to a depth of about 200 μm (first dicing).

[Pickup process]
In the pickup process, a semiconductor chip with a die bonding film is picked up using a collet. That is, as shown in FIGS. 16 and 17, a plurality of divided semiconductor chips 15 with a die bonding film are individually picked up from the dicing tape 5. For picking up the semiconductor chip 15 with the die bonding film, a device called a die bonder or die picker having a dedicated jig called a collet 8 (adsorption head portion that directly contacts the semiconductor chip) (hereinafter collectively referred to as a die bonder). Is used. The semiconductor chip is peeled off from the dicing tape 5 while being adsorbed to the collet 8, so that pick-up is performed with the die bonding film 4 attached (semiconductor chip 15 with the die bonding film), and then the wiring substrate 10 shown in FIG. It is transferred to a post-process for head bonding. In the pickup process, the semiconductor chip 15 with the die bonding film is pushed up by the push-up pins 9 from below the dicing tape 5 so that the semiconductor chip 15 with the die bonding film can be easily separated from the dicing tape 5. In this way, generally, the peeling angle of the surface of the dicing tape 5 with respect to the semiconductor chip 15 with the die bonding film is increased. At this time, it is preferable to push up the semiconductor chip using 4 to 20 push-up pins.

  The push-up height (stroke) of the push-up pin 9 is, for example, about 0.1 to 0.7 mm, but is preferably adjusted according to the chip size. For example, when the size of the chip is large, the contact area between the chip and the dicing tape is large, and the adhesive force between the chip and the dicing tape is large. Therefore, it is necessary to increase the push-up amount. On the other hand, when the size of the chip is small, the contact area between the chip and the dicing tape is small, and the adhesive force between the chip and the dicing tape is small. Therefore, even if the push-up amount is small, the chip is easily peeled off. In addition, the adhesive material used for a dicing tape has a difference in adhesive force by a manufacturer or a kind. Therefore, even when the chip sizes are the same, it is necessary to increase the push-up amount when an adhesive having a large adhesive force is used.

  According to the method for manufacturing a semiconductor device of this embodiment, the resin film 13 having a specific composition is formed on the semiconductor chip, so that even when a thin semiconductor chip having a thickness of 15 to 75 μm is used, the pickup is quickly performed. And the chip 15 can be prevented from being damaged.

  If the elastic modulus of the resin film 13 is smaller than 2 GPa, the semiconductor chip 15 with the die bonding film is deformed so as to follow the surface of the dicing tape 5 even if the resin film 13 is pushed up by the push-up pin. In contrast, a sufficient peeling angle cannot be obtained. For this reason, it becomes difficult to peel the semiconductor chip 15 with the die bonding film from the dicing tape 5, and quick pick-up cannot be performed. Also, if the push-up amount is forcibly increased, the semiconductor chip is likely to crack or chip.

[Die bonding process]
In the die bonding process, the semiconductor chip 15 with the die bonding film is mounted on the wiring substrate 10 by die bonding. As shown in FIG. 18, the semiconductor chip 15 with the die bonding film picked up in the pickup process is mounted on the wiring substrate 10 via the die bonding film 4 in the die bonding process.

[Process for manufacturing stacked packages]
In the process of manufacturing the stacked package, the semiconductor chip 15 with the die bonding film is stacked in a necessary number of steps using a die bonder. In addition, after lamination | stacking, in order to obtain the mechanical strength which can be wire-bonded, and in order to prevent foaming of a die-bonding film, a heating process is put in as needed. In general, 2 to 8 stages of semiconductor chips are stacked on one side of the wiring board 10. Thereafter, as shown in FIG. 19, the bonding pads 17 of each chip and the electrodes 16 of the wiring board 10 are electrically connected by wires 11. Thereafter, the wiring substrate 10 is transferred to a molding process, and the entire stacked chip 15 is sealed with the mold resin 12 to complete a stacked package.

[Semiconductor devices and electronic components]
A semiconductor device and an electronic component can be obtained by the semiconductor device manufacturing method of the present embodiment. Examples of such a semiconductor device include an SSD and a hybrid HDD. Examples of the electronic component include a flash memory used for a mobile phone (smart phone), a digital media player, an SD card, and the like.

  EXAMPLES Hereinafter, although this invention is described in detail with an Example and a comparative example, this invention is not limited at all by these.

[Synthesis example]
(Synthesis Example 1: Synthesis of Compound (Drying Oil) Modified Phenolic Resin A1 Having an Unsaturated Hydrocarbon Group with 4 to 100 Carbon Atoms)
100 parts by weight of phenol, 43 parts by weight of linseed oil and 0.1 parts by weight of trifluoromethanesulfonic acid were mixed and stirred at 120 ° C. for 2 hours to obtain a vegetable oil-modified phenol derivative. Next, 130 g of a vegetable oil-modified phenol derivative, 16.3 g of paraformaldehyde and 1.0 g of oxalic acid were mixed and stirred at 90 ° C. for 3 hours. Subsequently, after heating up to 120 degreeC and stirring under reduced pressure for 3 hours, 29 g of succinic anhydride and 0.3 g of triethylamine were added to the reaction liquid, and it stirred at 100 degreeC under atmospheric pressure for 1 hour. The reaction solution was cooled to room temperature (25 ° C.) to obtain a phenol resin A1 modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms as a reaction product (acid value: 120 mgKOH / g). . With respect to this modified phenolic resin A1, the weight average molecular weight in terms of standard polystyrene was determined by GPC method (gel permeation chromatography method) to be 25000.

(Synthesis Example 2: Synthesis of acrylic resin B1)
In a 500 ml three-necked flask equipped with a stirrer, a nitrogen inlet tube and a thermometer, 75 g of toluene and 75 g of isopropanol (IPA) were weighed, 85 g of butyl acrylate (BA) and 24 g of lauryl acrylate (DDA) separately weighed, 14 g of acrylic acid (AA) and 7.9 g of polymerizable monomer of 1,2,2,6,6-pentamethylpiperidin-4-yl methacrylate (trade name: FA-711MM, manufactured by Hitachi Chemical Co., Ltd.) As well as 0.13 g of azobisisobutyronitrile (AIBN). While stirring at room temperature at a stirring speed of about 270 rpm, nitrogen gas was flowed at a flow rate of 400 ml / min for 30 minutes to remove dissolved oxygen. Thereafter, the inflow of nitrogen gas was stopped, the flask was sealed, and the temperature was raised to 65 ° C. in about 25 minutes in a constant temperature water bath. A polymerization reaction was carried out while maintaining the same temperature for 14 hours to obtain an acrylic resin B1. The polymerization rate at this time was 98%. Moreover, about this acrylic resin B1, when the weight average molecular weight of standard polystyrene conversion was calculated | required by GPC method, it was 36000.

(Synthesis Example 3: Synthesis of polyimide precursor P1)
In a 200 ml four-necked flask equipped with a stirrer and a thermometer, 9.30 g of oxydiphthalic dianhydride (ODPA), 7.81 g of 2-hydroxyethyl methacrylate (HEMA), 4.75 g of pyridine, 0.01 g of hydroquinone, N, When 70 ml of N-dimethylacetamide (DMAc) was added and stirred at 60 ° C., a clear solution was obtained in 2 hours. After stirring this solution at room temperature for 7 hours, the flask was cooled with ice, and 8.57 g (0.072 mol) of thionyl chloride was added dropwise over 10 minutes. Thereafter, the mixture was stirred at room temperature for 1 hour to obtain a solution containing acid chloride. On the other hand, in another 200 ml four-necked flask, 6.37 g (0.03 mol) of 2,2-dimethylbenzidine (DMAP), 5.06 g (0.064 mol) of pyridine, 0.01 g of hydroquinone, N, N- 50 mL of dimethylacetamide (DMAc) was added, and while the flask was cooled with ice and stirred (maintained at 10 ° C. or lower), the solution containing the acid chloride was slowly added dropwise over 1 hour. Thereafter, the mixture was stirred at room temperature for 1 hour, poured into 1 liter of water, the precipitated polymer was collected by filtration, washed twice with water, and dried in vacuo to obtain a polyimide precursor (polyamic acid ester) P1. About this polyimide precursor P1, when the weight average molecular weight of standard polystyrene conversion was calculated | required by GPC method, it was 20000. Moreover, when the infrared absorption spectrum (The JEOL Co., Ltd. product, JIR-100 type | mold) was measured by KBr method about what dried the solution of the obtained polyimide precursor P1, all are 1600cm < ^-1 >. Absorption due to C═O of the amide group was observed in the vicinity, and absorption due to NH in the vicinity of 3300 cm ⁻¹ was confirmed.

(Synthesis Example 4: Synthesis of polybenzoxazole precursor P2)
A 500 ml flask equipped with a stirrer and a thermometer was charged with 15.48 g of 4,4′-diphenyl ether dicarboxylic acid and 90 g of N-methylpyrrolidone, and the flask was cooled to 5 ° C., after which 23.9 g of thionyl chloride was added dropwise. The mixture was reacted for 30 minutes to obtain a solution of 4,4′-diphenyl ether tetracarboxylic acid chloride. Next, in a 500 ml flask equipped with a stirrer and a thermometer, 87.5 g of N-methylpyrrolidone was charged, and 18.30 g of bis (3-amino-4-hydroxyphenyl) hexafluoropropane and 2.18 g of m-aminophenol. After stirring and dissolving, 9.48 g of pyridine was added, and while maintaining the temperature at 0 to 5 ° C., a solution of 4,4′-diphenyl ether dicarboxylic acid chloride was added dropwise over 30 minutes, followed by stirring for 30 minutes. Continued. The solution was poured into 3 liters of water, and the precipitate was collected, washed 3 times with pure water, and then dried under reduced pressure to obtain a polybenzoxazole precursor (polyhydroxyamide) P2. About the polybenzoxazole precursor P2, when the weight average molecular weight of standard polystyrene conversion was calculated | required by GPC method, it was 17600 and dispersion degree was 1.6.

(Synthesis Example 5: Synthesis of polyimide precursor P3)
After adding 9.9 g of 4,4′-diaminodiphenyl ether and 60 g of N-methyl-2-pyrrolidone to a 100 ml flask equipped with a stirrer, a thermometer and a nitrogen introduction tube, this was stirred and dissolved at room temperature under a nitrogen stream. 16.5 g of oxydiphthalic anhydride was added to the solution and stirred for 5 hours to obtain a solution of a viscous polyimide precursor (polyamic acid) P3. About the polyimide precursor P3, when the weight average molecular weight of standard polystyrene conversion was calculated | required by GPC method, it was 40000.

(Synthesis Example 6: Synthesis of polybenzoxazole precursor P4)
A 200 ml flask equipped with a stirrer and a thermometer was charged with 60 g of N-methylpyrrolidone, and 13.92 g of 2,2′-bis (3-amino-4-hydroxyphenyl) hexafluoropropane was added and dissolved by stirring. Subsequently, while maintaining the temperature at 0 to 5 ° C., 5.64 g of dodecanedioic acid dichloride was added dropwise over 10 minutes, and then stirring was continued for 60 minutes. The solution was poured into 3 liters of water, the precipitate was collected, washed with pure water three times, and then decompressed to obtain a polybenzoxazole precursor (polyhydroxyamide) P4. For the polybenzoxazole precursor P4, the weight average molecular weight in terms of standard polystyrene was determined by GPC method to be 31600, and the dispersity was 2.0.

[Preparation of resin composition]
(Resin composition I)
Modified phenol resin A1 synthesized in Synthesis Example 1 and cresol novolak resin A2 (cresol / formaldehyde novolak resin, m-cresol / p-cresol (molar ratio) = 60/40, polystyrene-reduced weight average molecular weight = 13000, Asahi Organic Materials Kogyo Co., Ltd., trade name “EP4020G”) was used so that the mass ratio was A1: A2 = 80: 20 (this is referred to as component A). 10 parts by mass of acrylic resin B1 synthesized in Synthesis Example 2 with respect to 100 parts by mass of component A, 10 parts by mass of hexakis (methoxymethyl) melamine (manufactured by Sanwa Chemical Co., Ltd., trade name “Nicarac MW-30HM”) 1,1-bis (4-hydroxyphenyl) -1- [4- {1- (4-hydroxyphenyl) -1-methylethyl} phenyl] ethane 1-naphthoquinone-2-diazide-5-sulfonic acid ester (Esterification rate of about 90%, manufactured by AZ Electronic Materials Co., Ltd., trade name “TPPA528”) 10 parts by mass, 1 part by weight of trimethylsulfonium methyl sulfate (manufactured by Fluorochem) and 160 parts by weight of ethyl lactate Blended. This was designated as Resin Composition I.

(Resin composition II)
For 100 parts by mass of the polyimide precursor P1 synthesized in Synthesis Example 3, (4,4′-bis (N, N-diethylamino) benzophenone 1 part by mass, tetraethylene glycol dimethacrylate (TEGDMA) 20 parts by mass, N— 6 parts by mass of (3-triethoxysilylpropyl) urea, 6 parts by mass of a compound represented by the following general formula (XI), and 140 parts by mass of N-methyl-2-pyrrolidone (NMP) were blended. Resin composition II was obtained.

(Resin composition III)
11 parts by mass of the acrylic resin B1 synthesized in Synthesis Example 2 with respect to 100 parts by mass of the polybenzoxazole precursor P2 synthesized in Synthesis Example 4, 15 parts by mass of the compound represented by the following general formula (XII), γ- 160 parts by mass of butyrolactone was blended. In order to adjust the solubility, DPIN iodonium salt was added as appropriate so that the dissolution rate of the unexposed area was almost constant at about 20 nm / s for each sample. This was designated as Resin Composition III.

(Resin composition IV)
A solution of the polyimide precursor P3 synthesized in Synthesis Example 5 was designated as a resin composition IV.

(Resin composition V)
11 parts by mass of the acrylic resin B1 synthesized in Synthesis Example 2, 10 parts by mass of the compound represented by the following general formula, and 150 parts by mass of NMP are blended with 100 parts by mass of the polybenzoxazole precursor P4 synthesized in Synthesis Example 6. did. Further, in order to adjust the solubility, an iodonium salt represented by the following general formula (XIII) was appropriately added so that the dissolution rate of the unexposed part was approximately constant at about 20 nm / s for each sample. This was designated as Resin Composition V.

(Examples 1-6, Comparative Examples 1-3)
[Resin film forming process]
Using CLEAN TRACK ACT12 manufactured by Tokyo Electron Co., Ltd., the resin compositions I to V obtained by the above method were spin-coated on one surface of the wafer (the surface forming the integrated circuit). Thereafter, pre-baking was performed at 120 ° C. for 3 minutes to form a resin composition film. As a wafer, an SiO film 1 μm formed by a CVD method on the surface of a semiconductor wafer (thickness: 775 μm), an Al film (containing 1 wt% Si) 1 μm formed thereon by a PVD method, and further thereon A laminate of 0.5 μm SiN films formed by the CVD method was used.

  Thereafter, using an inert gas oven INH-9CD-S manufactured by Koyo Thermo Systems Co., Ltd. under a nitrogen atmosphere, depending on the type of the resin composition, the resin composition film is heated at 180 to 350 ° C. as shown in Table 1. Curing (heat curing) was performed to obtain a resin film having a thickness of 7 to 25 μm. The film thickness of the resin film in each example and each comparative example is shown in Table 1.

[Back grinding process]
First, the back grind tape was attached to one surface of the wafer (the surface on which the integrated circuit is formed) using ATM3000EF manufactured by Takatori Co., Ltd. MS-2003 manufactured by Hitachi Chemical Co., Ltd. was used as the back grind tape. Next, back grinding was performed using DGP8761 Fully Automatic Grinder / Polisher manufactured by DISCO Corporation, and the wafer thickness (total wafer thickness) was finished to 30 μm using DP-08 manufactured by DISCO Corporation. . Further, the wafer and the dicing / die bonding integrated film were attached at 120 ° C. using a DFM2800 Full Automatic Multifunction Wafer Monitor manufactured by DISCO Corporation. In addition, as a dicing die bonding integrated film, Hitachi Chemical Co., Ltd. FH-9011 (film thickness: 40 micrometers) was used.

[Dicing process]
Next, the wafer was diced to obtain a plurality of chips with a die bonding film having a size of 10 mm × 10 mm. Dicing was performed in a fully automatic manner using a DFD 6361 Full Automatic Dicing Saw manufactured by DISCO Corporation. The blade was ZH05 SD4800-N1-70 manufactured by DISCO Corporation, the rotational speed was 35000 rpm, the cutting amount was 25 μm with respect to the thickness of the adhesive tape, and the feed rate was 30 mm / s.

[Measurement of elastic modulus and elongation]
The elastic modulus and elongation of the resin film were measured as follows. That is, the wafer with the resin film was immersed in a 4.9% hydrofluoric acid aqueous solution, and the resin film was peeled from the wafer. The resin film was washed with water and dried to obtain a sample for measuring the elastic modulus and elongation. The elastic modulus (tensile elastic modulus) and the elongation rate (breaking elongation) were determined by a tensile test of Autograph AGS-H 100N manufactured by Shimadzu Corporation. The sample size was 10 mm × 60 mm, the distance between chucks was 20 mm, the tensile speed was 5 mm / min, and the measurement temperature was 25 ° C. In addition, the thickness of the cured film was as shown in Table 1, respectively. The measurement results are shown in Table 1.

[Measurement of thermal expansion coefficient]
The thermal expansion coefficient (CTE) of the resin film was measured using a TMA / SS6000 thermomechanical measuring device manufactured by Seiko. Specifically, the cured film is cut into 2 mm × 3 cm, and TMA / SS6000 thermomechanical measuring device manufactured by Seiko Co., Ltd. is applied to 30 to 420 ° C. while applying a load of 10 g / min (temperature increase rate 5 ° C./min. ) Heated. CTE was measured by measuring the slope of the elongation of the cured film between 100 and 200 ° C. The measurement results are shown in Table 1.

[Measurement of glass transition temperature]
The glass transition temperature (Tg) of the resin film was determined from the inflection point of the thermal expansion coefficient at a temperature increase rate of 5 ° C./min using TMA / SS6000 manufactured by Seiko Instruments Inc. The measurement results are shown in Table 1.

[Pickup process: Pickup performance evaluation]
The pick-up property of each chip divided by the dicing process was evaluated. The chip produced by the above method was picked up using a flexible die bonder DB-730 manufactured by Renesas East Japan Semiconductor Co., Ltd., and the pickup property was evaluated. The pick-up collet used was RUBBER TIP 13-087E-33 (size: 10 × 10 mm) manufactured by Micromechanics, and the push-up pin was EJECTOR NEEDLE SEN2-83-05 manufactured by Micromechanics (diameter: 0.7 mm, tip shape: 350 μm in diameter) Half circle). Nine push-up pins were arranged at a pin center interval of 4.2 mm. The pin push-up speed during pick-up was 10 mm / s. The push-up height at the time of pick-up was changed from 0.35 mm to 0.45 mm by 0.025 mm.

  In the evaluation, the pickup was first picked up 10 times at a lifting height of 0.35 mm, and if all succeeded, the pickup was possible, and if a failure such as a pickup mistake or chip crack occurred even in one chip, the pickup was impossible. . If the pickup is not possible, raise the push-up height by 0.025 mm and pick up again. Repeat this operation until all 10 pickups are successful or the push-up height is 0.45 mm. It was.

  A evaluation when the minimum push-up height that can be picked up is less than 0.4 mm, B evaluation when 0.4 to 0.45 mm is required, and C evaluation when a push-up height greater than 0.45 mm is required. It was. That is, it was evaluated that picking up with a lower push-up height was quicker and picking up was better. The evaluation results are shown in Table 1.

  As in Examples 1 to 6, when using a chip including a resin film having an elastic modulus at 25 ° C. of 2 to 10 GPa and a film thickness of 3 to 10 μm, the pickup is quickly performed without damaging the chip. I was able to. On the other hand, when the elastic modulus was smaller than 2 GPa as in Comparative Example 1, the chip was deformed so as to follow the surface of the pressure-sensitive adhesive sheet at the time of pushing up, and a good pickup could not be performed. Similarly, in the case of Comparative Example 2 where the film thickness of the resin film was smaller than 3 μm, good pickup could not be performed.

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor wafer (wafer), 2 ... Back grind tape (protective layer), 3 ... Grinder, 4 ... Die bonding film, 5 ... Dicing tape, 6 ... Adhesive sheet (dicing die bonding integrated film), 7 ... Dicing Blade: 8 ... Collet, 9 ... Push-up pin, 10 ... Wiring board, 11 ... Wire, 12 ... Mold resin, 13 ... Resin film, 14 ... Semiconductor chip (conventional semiconductor chip), 15 ... Semiconductor chip (having resin film) Semiconductor chip), 16 ... electrode, 17 ... bonding pad, 18 ... wafer ring.

Claims (10)

Forming a resin film on one surface of the semiconductor wafer;
A process for producing a semiconductor chip with a die bonding film by bonding a pressure sensitive adhesive sheet provided with a die bonding film to the other surface of the semiconductor wafer and performing dicing,
A step of picking up the semiconductor chip with the die bonding film using a collet;
A step of die-bonding the semiconductor chip with the die-bonding film on a wiring board, and a method of manufacturing a semiconductor device,
The semiconductor wafer has a thickness of 15 to 75 μm,
The method of manufacturing a semiconductor device, wherein the resin film has an elastic modulus at 25 ° C. of 2 to 10 GPa and a film thickness of 3 to 20 μm.   The method for manufacturing a semiconductor device according to claim 1, wherein the resin film has an elongation percentage at 25 ° C. of 5 to 100%.   The method for manufacturing a semiconductor device according to claim 1, wherein the resin film is a film obtained by curing a resin composition.   The said resin film is a manufacturing method of the semiconductor device as described in any one of Claims 1-3 which is a film | membrane obtained by heat-hardening a resin composition at 120-280 degreeC.   5. The method of manufacturing a semiconductor device according to claim 3, wherein the resin composition contains at least one selected from the group consisting of polyimide, polyamic acid, polyhydroxyamide, polybenzoxazole, and phenol resin.   The method for manufacturing a semiconductor device according to claim 1, wherein the die bonding film has a thickness of 5 to 30 μm.   The method of manufacturing a semiconductor device according to claim 1, wherein the dicing is performed using a blade.   The method of manufacturing a semiconductor device according to claim 1, wherein the step of picking up the semiconductor chip includes a step of pushing up the semiconductor chip with the die bonding film using 4 to 20 push-up pins. .   The semiconductor device obtained by the manufacturing method of the semiconductor device as described in any one of Claims 1-8.   The electronic component obtained by the manufacturing method of the semiconductor device as described in any one of Claims 1-8.

Images