JP2013098889A - Electronic circuit, manufacturing method of electronic circuit, and packaging member - Google Patents

Abstract

PROBLEM TO BE SOLVED: To allow for high-quality data transfer while suppressing a larger circuit scale.SOLUTION: A single-end I/F having pads for exchanging a single end signal is provided in a millimeter wave transmission chip, for example, a semiconductor chip. Meanwhile, for example, a differential transmission line such as a coplanar strip line which transmits a differential signal and a stub connected to the differential transmission line are formed in a packaging section in which semiconductor chips such as an interposer and a printed-circuit board are mounted. The millimeter wave transmission chip is mounted in the packaging section so that the pads of the single-end I/F are electrically connected directly to a conductor constituting the differential transmission line. This technique, for example, is applicable to electronic circuits such as IC.

Description

  The present technology relates to an electronic circuit, a method for manufacturing an electronic circuit, and a mounting member, and particularly, for example, an electronic circuit and an electronic circuit that can perform high-quality data transmission while suppressing an increase in the scale of the circuit. The present invention relates to a circuit manufacturing method and a mounting member.

  For example, in various electronic devices such as a television receiver, a video camera, and a recorder, an IC (Integrated Circuit) (LSI (Large-Scale Integration)) that is an electronic circuit that performs various signal processing is provided in the casing. A substrate on which is disposed) is accommodated.

  In order to exchange data (including actual data such as images and sounds, and control data) between ICs arranged on the same board and ICs arranged on different boards, ICs Wired wiring is provided between the boards and between the boards.

  By the way, recently, in IC, signal processing is performed for large-capacity data such as 3D (dimension) images and high-definition images, and such large-capacity data is transferred at high speed between ICs. May be exchanged.

  In order to exchange a large amount of data at high speed, the number of wirings between ICs and between substrates increases, and it may be difficult to prevent high frequency wiring.

  Therefore, it has been proposed to exchange data between ICs wirelessly.

  That is, for example, in Non-Patent Documents 1 and 2, a CMOS (Complementary Metal Oxide Semiconductor) circuit that exchanges data at high speed by modulating data into a millimeter-wave band signal (millimeter wave) ( IC).

  By the way, in a CMOS circuit described in Non-Patent Documents 1 and 2 that modulates and transmits data to an RF (Radio Frequency) signal such as a millimeter wave, the interface of the RF unit that processes the RF signal is a single interface. It is a single-ended I / F (Interface) through which a single-ended signal is exchanged.

  That is, in the RF unit, for example, the RF signal output from the RF unit is easy to measure (the probe of the measuring instrument that measures millimeter waves supports a single-ended signal), and the circuit configuration of the CMOS circuit is simplified. Single-ended I / F is adopted because it can reduce power consumption.

  On the other hand, data transmission using a single-ended signal may not be as good as data transmission using a differential signal.

  That is, in a CMOS circuit where the RF unit is mounted, an interposer, a printed circuit board (PCB), etc., for transmitting a single end signal, for example, when forming a microstrip line, ideally However, it is difficult to provide an infinite ground conductor, and as a result, the quality of data transmission deteriorates.

  In addition, data transmission using a single-ended signal has more unnecessary radiation than data transmission using a differential signal, and furthermore, resistance to noise from outside (outside the transmission path where the single-ended signal is transmitted) is weak. Data transmission quality deteriorates.

  Therefore, there is a method for performing high-quality data transmission by converting a single-ended signal into a differential signal and performing data transmission using the differential signal.

  The conversion between a single-ended signal and a differential signal is called a balanced-unbalanced (unbalanced) conversion, and a circuit that performs balanced-unbalanced conversion is called a balun.

  For example, Patent Document 1 describes a balun that converts a single-ended signal (unbalanced input) on a coplanar line from a coplanar strip line into a differential signal (balanced output) and outputs the balun.

JP 2004-104651 A

Kenichi, Kawasaki et. Al. “A Millimeter-Wave Intra-Connect Solution”, IEEE J. Solid-State Circuits, vol. 45, no. 12, pp. 2655-2666, Dec. 2010 Eric Juntunen et. Al. “A 60-GHz 38-pJ / bit 3.5-Gb / s 90-nm CMOS OOK Digital Radio”, IEEE Trans. Microwave Theory Tech., Vol. 58, no. 2, Feb. 2010

  By converting the single-ended signal of the RF unit into a differential signal using a balun, data transmission with high quality can be performed.

  However, in order to convert the single-ended signal of the RF unit into a differential signal by balun, it is necessary to provide a balun in a CMOS circuit or the like, and the circuit becomes large.

  The present technology has been made in view of such a situation, and is capable of performing high-quality data transmission while suppressing an increase in circuit scale.

  An electronic circuit according to a first aspect of the present technology includes a semiconductor chip provided with a single end I / F having a pad for exchanging a single end signal, a differential transmission path for transmitting a differential signal, and the differential circuit. A stub connected to the transmission line, and the semiconductor chip is electrically connected directly to a conductor constituting the differential transmission line with the pad of the single-ended I / F. It is an electronic circuit provided with the mounting part mounted.

  A method for manufacturing an electronic circuit according to a first aspect of the present technology includes: a differential transmission path for transmitting a differential signal through a semiconductor chip provided with a single-ended I / F having a pad for exchanging a single-ended signal; A stub connected to the differential transmission path is formed, and when mounted on a mounting portion on which the semiconductor chip is mounted, a conductor constituting the differential transmission path is connected to the single-ended I / F. An electronic circuit manufacturing method in which pads are directly electrically connected.

  In the first aspect of the present technology, the semiconductor chip is provided with a single-ended I / F having a pad through which a single-ended signal is exchanged, and the differential transmission for transmitting the differential signal is provided in the mounting portion. A path and a stub connected to the differential transmission path are formed. The semiconductor chip is mounted on the mounting portion so that the pads of the single-ended I / F are electrically directly connected to the conductors constituting the differential transmission path.

  The mounting member according to the second aspect of the present technology includes a differential transmission path for transmitting a differential signal and a stub connected to the differential transmission path, and a dielectric is disposed on the differential transmission path. And a mounting member on which a semiconductor chip provided with a single-ended I / F having pads for exchanging single-ended signals is mounted.

  In a second aspect of the present technology, a differential transmission path that transmits a differential signal to a mounting member on which a semiconductor chip provided with a single-ended I / F having a pad for exchanging a single-ended signal is mounted; And a stub connected to the differential transmission line. Furthermore, a dielectric is disposed on the differential transmission path.

  According to the present technology, high-quality data transmission can be performed while suppressing an increase in circuit scale.

It is a figure which shows the structural example of the millimeter wave transmission system which exchanges the millimeter wave of a single end signal. It is a figure which shows the other structural example of the millimeter wave transmission system which exchanges the millimeter wave of a single end signal. It is a top view which shows the structural example of the interposer in case the mounting part 11 is an interposer. It is a perspective view showing an example of composition of a 1st embodiment of an electronic circuit to which this art is applied. It is sectional drawing which shows the structural example of 1st Embodiment of the electronic circuit to which this technique is applied. It is a perspective view which shows the structural example of 2nd Embodiment of the electronic circuit to which this technique is applied. It is sectional drawing which shows the structural example of 2nd Embodiment of the electronic circuit to which this technique is applied. It is sectional drawing which shows a differential transmission path. They are a perspective view and a sectional view showing a coplanar strip line 103 as a differential transmission line. It is a perspective view showing an example of composition of a 3rd embodiment of an electronic circuit to which this art is applied. 6 is a diagram for explaining an example of an arrangement pattern in which a dielectric 130 is arranged on a coplanar strip line 103. FIG. It is a diagram illustrating another method of performing adjustment for reducing the impedance Z _c of the coplanar stripline 103. It is a diagram explaining another method to adjust to decrease the impedance Z _c of the coplanar stripline 103. It is a perspective view showing an example of composition of a 4th embodiment of an electronic circuit to which this art is applied. It is sectional drawing which shows the structural example of 4th Embodiment of the electronic circuit to which this technique is applied. It is a perspective view which shows the structural example of 5th Embodiment of the electronic circuit to which this technique is applied. It is a figure which shows the result of simulation. It is a perspective view showing an example of composition of a 6th embodiment of an electronic circuit to which this art is applied. It is sectional drawing which shows the structural example of 6th Embodiment of the electronic circuit to which this technique is applied. It is the upper side figure and sectional drawing which show the structural example of 7th Embodiment of the electronic circuit to which this technique is applied. It is a figure which shows the result of simulation. It is the upper side figure and sectional drawing which show the structural example of 8th Embodiment of the electronic circuit to which this technique is applied. It is a figure which shows the result of simulation.

  Hereinafter, embodiments of the present technology will be described. Before that, a millimeter wave transmission system that exchanges millimeter waves of a single-ended signal will be described as preparation for the previous stage.

  [Millimeter-wave transmission system for exchanging millimeter-wave single-ended signals]

  FIG. 1 is a diagram illustrating a configuration example of a millimeter wave transmission system that exchanges millimeter waves of a single-ended signal.

  In FIG. 1, the millimeter wave transmission system includes electronic circuits 10 and 40 which are, for example, ICs.

  The electronic circuit 10 has a function of transmitting data by millimeter waves, and the electronic circuit 40 has a function of receiving data by millimeter waves.

  The electronic circuit 10 includes a mounting unit 11 and a millimeter wave transmission chip 20.

  The mounting unit 11 is a member (mounting member) such as an interposer or a printed board on which a semiconductor chip is mounted, and has a flat plate shape.

  A millimeter wave transmission chip 20, which is a semiconductor chip, is mounted on the surface that is one surface of the flat mounting portion 11, and the entire surface of the back surface that is the other surface of the flat mounting portion 11 is, for example, In addition, a thin-film ground metal 12 that is a metal serving as a ground is provided over a region close to the entire region.

Furthermore, vias 13 ₁ and 13 ₂ , a microstrip line 14, and an antenna 15 are formed on the surface of the mounting portion 11.

The vias 13 ₁ and 13 ₂ are connected to the ground metal 12 on the back surface of the mounting portion 11.

  The microstrip line 14 is an unbalanced transmission line and is formed in the mounting portion 11 in a band shape. One end of the strip-shaped microstrip line 14 is connected to the antenna 15.

  The antenna 15 is composed of a bonding wire of about 1 mm, for example.

  The millimeter wave transmission chip 20 is composed of, for example, a CMOS or the like, and includes a single end I / F 21 and a transmission unit 22.

The single end I / F 21 has three pads 21 ₁ , 21 ₂ , and 21 ₃ that are terminals for exchanging single end signals (unbalanced signals).

Of the three pads 21 ₁ to 21 _3, two pads 21 ₁ and 21 ₃ are ground of the transmission unit 22 (GND) terminal (ground pad), by a bonding wire, the vias 13 ₁ and 13 _2, Each is connected. Accordingly, the pad 21 _1, through the vias 13 _1, the pad 21 _3, through a via 13 ₂ are respectively connected to the back surface of the ground metal 12 of the mounting portion 11.

Of the three pads 21 ₁ to 21 ₃ , the remaining pad 21 ₂ is a signal terminal (signal pad) through which signals are exchanged, and the output of the transmission unit 22 (the amplifier 34 thereof) is transmitted to the pad 21 _2. Supplied. Pad 21 ₂ by a bonding wire is connected to the other end of the microstrip line 14 (the end which is not connected to the antenna 15).

  The transmission unit 22 transmits a millimeter-wave band signal (millimeter wave).

  Here, the millimeter wave is a signal having a frequency of about 30 to 300 GHz, that is, a wavelength of about 1 to 10 mm. A millimeter-wave band signal has a high frequency, so that data transmission at a high data rate is possible. In addition to wired communication, wireless communication (wireless transmission) can be performed with a small antenna.

  The transmission unit 22 includes an amplifier 31, an oscillator 32, a mixer 33, and an amplifier 34.

  Transmission data to be transmitted is supplied to the amplifier 31 from a signal processing circuit (not shown). The amplifier 31 adjusts the level of the transmission data supplied thereto and supplies it to the mixer 33.

  Here, as the transmission data, for example, data having a data rate of 11 Gbps at the maximum can be adopted.

  The oscillator 32 generates, for example, a carrier of a millimeter wave band such as 56 GHz by oscillation and supplies the carrier to the mixer 33.

  The mixer 33 mixes (multiplies) the transmission data from the amplifier 31 and the carrier from the oscillator 32 to modulate the carrier from the oscillator 32 in accordance with the transmission data, and the resulting modulated signal is converted to the amplifier 34. To supply.

  Here, the modulation method for modulating the carrier according to the transmission data is not particularly limited, but for the sake of simplicity, for example, amplitude modulation (ASK (Amplitude Shift Keying)) is adopted here. And

The amplifier 34 amplifies the modulation signal from the mixer 33 and outputs the amplified modulation signal as a single-ended signal. Modulation signal is a single-ended signal amplifier 34 output is supplied to the pad 21 _2.

As described above, the pad 21 ₂ by a bonding wire is connected to the microstrip line 14, therefore, the modulation signal amplifier 34 is outputted, while the single-ended signal, transmitted through the microstrip line 14, the antenna 15 Is transmitted as radio waves.

  The electronic circuit 40 includes a mounting unit 41 and a millimeter wave transmission chip 50.

  The mounting portion 41 is a member (mounting member) such as a flat plate-shaped interposer or a printed circuit board, similar to the mounting portion 11, and a millimeter wave transmission chip 50, which is a semiconductor chip, is mounted on one surface thereof. Yes.

  Further, on the back surface, which is another surface of the mounting portion 41, similarly to the mounting portion 11, a thin-film ground metal 42 that is a metal serving as a ground is provided over the entire region and a region close to the entire region. ing.

Furthermore, vias 43 ₁ and 43 ₂ , a microstrip line 44, and an antenna 45 are formed on the surface of the mounting portion 41.

Vias 43 ₁ and 43 ₂ are connected to the back surface of the ground metal 42 of the mounting portion 41.

  The microstrip line 44 is an unbalanced transmission line and is formed in the mounting portion 41 in a band shape. One end of the strip-shaped microstrip line 44 is connected to the antenna 45.

  The antenna 45 is composed of a bonding wire of about 1 mm, for example, like the antenna 15.

  The millimeter wave transmission chip 50 is formed of, for example, CMOS or the like, similar to the millimeter wave transmission chip 20, and includes a single-ended I / F 51, a receiving unit 52, and the like.

Single-ended I / F51 have like the single I / F21, 1 3 one pad ₅₁ is a terminal for exchanging a single-ended signal, 51 _2, and 51 _3.

Of the three pads 51 ₁ to 51 ₃ , two pads 51 ₁ and 51 ₃ are ground (GND) terminals of the receiving unit 52 and are connected to the vias 43 ₁ and 43 ₂ by bonding wires, respectively. Yes. Accordingly, pads 51 _1, through the via 43 _1, the pad 51 _3, through the via 43 ₂ are respectively connected to the back surface of the ground metal 42 of the mounting portion 41.

Of the three pads 51 ₁ to 51 _3, the rest of the pad 51 ₂ is a signal terminal to which a signal is exchanged, Bad 51 ₂ is connected to the input of the receiving unit 52 (amplifier 61). Further, the pad 51 ₂ by a bonding wire is connected to the other end of the microstrip line 44 (the end which is not connected to the antenna 45).

  The receiving unit 52 receives a millimeter-wave band signal (millimeter wave).

  The receiving unit 52 includes an amplifier 61, an oscillator 62, a mixer 63, and an amplifier 64.

The amplifier 61, the modulated signal transmitted from the microstrip line 44 to the pad 52 ₂ is supplied as a single-ended signal.

Amplifier 61 amplifies the modulated signal from the pad 52 _2, an oscillator 62, and supplies to the mixer 63.

  The oscillator 62 generates a carrier synchronized with the modulation signal from the amplifier 61 by oscillation and supplies the carrier to the mixer 63.

  The mixer 63 mixes (multiplies) the modulation signal from the amplifier 61 with the carrier from the oscillator 62, thereby converting the modulation signal from the amplifier 61 into a baseband signal and supplies the baseband signal to the amplifier 64.

  The amplifier 64 amplifies the baseband signal from the mixer 63 and outputs it.

  The baseband signal output from the amplifier 64 is filtered by an LPF (Low Pass Filter) (not shown), whereby transmission data (corresponding frequency component) is extracted (acquired). The transmission data is supplied to a signal processing circuit (not shown) and processed.

In the above millimeter wave transmission system configured as, in the electronic circuit 10, transmitting unit 22, a modulation signal of a millimeter wave from the pad 21 _{and second} single-ended I / F21, and outputs as a single-ended signal.

Pad 21 ₂ by a bonding wire is connected to the microstrip line 14, the modulation signal output from the pad 21 _2, leaving a single-ended signal, transmitted through the microstrip line 14, from the antenna 15, transmitting wirelessly Is done.

Modulated signal transmitted from antenna 15 is received by the antenna 45, as a single-ended signal, transmitted through the microstrip line 44 via the bonding wire, and reaches the pad 51 _{and second} single-ended I / F51.

Modulated signal reaching the pad 51 _{and second} single-ended I / F51 is received by the receiver 52, it is demodulated into a baseband signal.

  The millimeter wave transmission chip 20 is provided with a transmission unit 22 that transmits millimeter waves and is not provided with a reception unit that transmits millimeter waves. However, the millimeter wave transmission chip 20 includes a transmission unit 22 and a reception unit 52. It is possible to provide both with the receiving part comprised similarly. By providing both the transmission unit 22 and the reception unit configured similarly to the reception unit 52 in the millimeter wave transmission chip 20, the millimeter wave transmission chip 20 can perform reception in addition to transmission of millimeter waves. It becomes possible.

  Similarly, the millimeter wave transmission chip 50 can be provided with both a receiving unit 52 and a transmitting unit configured similarly to the transmitting unit 22.

  FIG. 2 is a diagram illustrating another configuration example of a millimeter wave transmission system that exchanges millimeter waves of single-ended signals.

  In the figure, portions corresponding to those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  In FIG. 2, in addition to the millimeter wave transmission chip 20, a millimeter wave transmission chip 50 is also mounted on the mounting unit 11.

One end of the microstrip line 14, the antenna 15 rather than by a bonding wire is connected to the pad 51 _{and second} single-ended I / F51.

In FIG. 2, vias 43 ₁ and 43 ₂ are formed on the surface of the mounting portion 11, and the vias 43 ₁ and 43 ₂ are connected to the ground metal 12 on the back surface of the mounting portion 11. Then, the pads 51 ₁ and 51 ₃ of the single-ended I / F51, by a bonding wire, the vias 43 ₁ and 43 ₂ are connected.

In the above millimeter wave transmission system configured as the transmission unit 22, a modulation signal of a millimeter wave from the pad 21 _{and second} single-ended I / F21, and outputs as a single-ended signal.

Pad 21 ₂ by a bonding wire is connected to the microstrip line 14, the modulation signal output from the pad 21 _2, leaving a single-ended signal, transmitted through the microstrip line 14 via the bonding wire, it reaches the pad 51 _{and second} single-ended I / F51.

Modulated signal reaching the pad 51 _{and second} single-ended I / F51 is received by the receiver 52, it is demodulated into a baseband signal.

  In the transmission unit 22 that transmits millimeter waves and the reception unit 52 that receives millimeter waves, the I / F that exchanges millimeter waves is easy to measure RF signals such as modulation signals (probe of a measuring instrument that measures millimeter waves). Single-end I / F (single-end I / F21 and 51) is adopted because the circuit configuration of the CMOS circuit is simplified and power consumption can be reduced. Is done.

  However, the quality of data transmission using single-ended signals may be poor compared to data transmission using differential signals.

  That is, as shown in FIGS. 1 and 2, in the case where the microstrip line 14 for transmitting a single-ended signal is formed on the mounting portion 11 such as an interposer or a printed board, ideally an infinite ground conductor However, it is difficult to provide an infinite ground conductor, and as a result, the quality of data transmission may deteriorate. In this respect, as shown in FIG. 1, the same applies to the case where the microstrip line 44 is formed in the mounting portion 41.

  In addition, in data transmission using a single-ended signal, there is more unnecessary radiation than in data transmission using a differential signal, and further against noise from the outside (outside of the microstrip lines 14 and 44 through which the single-ended signal is transmitted). Since the tolerance is weak, the quality of data transmission may deteriorate.

  Here, FIG. 3 is a plan view showing a configuration example of the interposer when the mounting unit 11 of FIG. 1 is an interposer.

  In FIG. 3, the interposer has two layers, a first layer 70 and a second layer (GND layer) 80. The first layer 70 and the second layer 80 have a flat plate shape. For example, the second layer 80 is located below the first layer 70.

The first layer 70, the vias 13 ₁ and 13 ₂ described in FIG. 1, a microstrip line 14, and antenna 15 are formed.

  Further, the first layer 70 is formed with lands 71 connected to pads (not shown) of the millimeter wave transmission chip 20 by bonding wires.

The second layer 80, the ground has been metal 12 is formed, vias 13 ₁ and 13 ₂ formed in the first layer is connected to the ground metal 12.

  As shown in FIG. 3, in the interposer, when the microstrip line 14 for transmitting a single-ended signal is formed in the first layer 70, the ground metal 12 needs to be formed over a wide range. In FIG. 3, the ground metal 12 is formed in the range of about 2/3 on the right side of the second layer 80. The ground metal 12 formed over such a wide range presses the wiring on the interposer. To do.

  As a method for performing high-quality data transmission, there is a method for performing data transmission using a differential signal by converting a single-ended signal into a differential signal.

  However, a balun is necessary for conversion between a single-ended signal and a differential signal, and although a short wavelength signal such as a millimeter wave is handled, a balun is formed by comparison with the transmission unit 22 and the reception unit 52. Requires a large element. Therefore, when the balun is mounted, the circuit becomes large-scale.

  Therefore, the present technology makes it possible to perform high-quality data transmission while suppressing an increase in circuit scale.

  [First Embodiment]

  4 is a perspective view showing a configuration example of a first embodiment of an electronic circuit to which the present technology is applied, and FIG. 5 is a cross-sectional view of a single-ended I / F 111 portion of the electronic circuit of FIG. .

  4 and 5, the electronic circuit includes a mounting unit 101 and a millimeter wave transmission chip 110.

  The mounting unit 101 is a member (mounting member) such as a flat plate-shaped interposer or a printed circuit board, for example, similarly to the mounting unit 11 of FIG.

  A millimeter wave transmission chip 110 which is a semiconductor chip is mounted on the surface which is one surface of the flat mounting portion 101.

  Note that a thin-film ground metal, which is a metal serving as a ground, is provided on the back surface, which is the other surface of the flat mounting portion 101, but the illustration thereof is omitted.

Lands 102 ₁ and 102 ₂ and a coplanar strip line 103 are formed on the surface of the mounting portion 101.

The lands 102 ₁ and 102 ₂ are connected to the coplanar strip line 103.

Configuration coplanar stripline 103 is a transmission path of a balanced differential signals are exchanged (differential transmission lines), the mounting portion 101, including parallel formed two strip conductors 103 ₁ and 103 ₂ Is done.

One end of the conductor 103 ₁ is connected to the land 102 _1, one end of the conductor 103 ₂ is connected to the land 102 _2.

  The millimeter wave transmission chip 110 is composed of, for example, a CMOS or the like, and has a single end I / F 111 or the like.

  The millimeter wave transmission chip 110 includes an RF unit configured similarly to the transmission unit 22 and the reception unit 52 of FIG. 1, but illustration thereof is omitted.

Single-ended I / F 111 is 1 three pads ₁₁₁ are terminals for RF unit interacts single-ended signal (signal unbalanced), 111 _2, and has a 111 _3.

Here, in FIG. 4, the lands 102 ₁ and 102 ₂ , the pads 111 ₁ to 111 ₃ , and the bumps are actually hidden behind the millimeter wave transmission chip 110 but are not visible in FIG. Assuming 110 is colorless and transparent, lands 102 ₁ and 102 ₂ , pads 111 ₁ to 111 ₃ , and bumps are shown.

Of the three pads 111 ₁ to 111 ₃ , two pads 111 ₁ and 111 ₃ are ground (GND) terminals of the RF section, and the remaining pads 111 ₂ are signals through which signals (signal components) are exchanged. Terminal. Therefore, in the RF section, from the bad 111 _2, the modulation signal a single-ended signal is outputted, also, the signal supplied to the pad 111 ₂ is treated as a single-ended signal.

4 and 5, the pads 111 ₁ and 111 ₂ of the single-ended I / F 111 are respectively connected to the conductors 103 ₁ and 103 ₂ constituting the coplanar strip line 103 (without using a balun that performs balanced / unbalanced conversion). (Ii) The millimeter wave transmission chip 110 is mounted on the mounting portion 101 (for example, flip chip mounting) so as to be electrically connected directly.

As shown in FIG. 5, the millimeter wave transmission chip 110 is configured by forming a silicon oxide film 122 on the silicon 121. The pads 111 ₁ to 111 ₃ are formed on the silicon 121 or the silicon oxide film 122.

4 and 5, and a conductor 103 ₁ and the pad 111 _1, is electrically connected directly via the lands 102 ₁ and the bumps, the conductor 103 ₂ and the pad 111 _2, through the lands 102 ₂ and the bumps electrically Directly connected.

In FIGS. 4 and 5, the single-ended I / pads 111 ₃ is a ground terminal of the F 111, it is not connected to both the other ground terminal (pad millimeter wave transmission chip 110 (RF unit) The ground terminals (not shown connected to 111 ₁ and 111 ₃ ) are connected to a ground metal (not shown) provided in the mounting portion 101.

Here, in FIGS. 4 and 5, the pad 111 ₃ is a ground terminal of the single-ended I / F 111 may be connected to the ground metal (not shown) is provided in the mounting portion 101.

Further, in FIGS. 4 and 5, to three pads 111 ₁ single-ended I / F 111 of the 111 _3, pads 111 ₁ and 111 ₃ are both ground terminals, instead of the pads 111 _1, the pad 111 _3, can be electrically connected directly to conductor 103 _1.

4 and 5 constitutes the coplanar strip line 103 when the millimeter wave transmission chip 110 provided with the single-ended I / F 111 is mounted on the mounting portion 101 on which the coplanar strip line 103 is formed. the conductors 103 ₁ and 103 _2, a single-ended I / F 111 of the pad 111 ₁ and 111 _2, that is electrically connected directly, i.e., the conductor 103 ₁ and pad 111 _1, through the lands 102 ₁ and a bump thereby electrically connected directly, the conductor 103 ₂ and the pad 111 _2, by connecting electrically directly via the land 102 ₂ and the bumps can be manufactured.

In the electronic circuit configured as described above, with respect to a signal output from the single-ended I / F 111, a signal appearing on the pad 111 ₁ connected to the conductor 103 ₁ in the coplanar strip line 103 (ideally, the ground level), the signal appearing at the pad 111 ₂ connected to the conductor 103 ₂ (single-ended signal) is transmitted as a signal of the cold side and the hot side of the differential signal (negative and positive).

Also, the differential signal transmitted from the coplanar stripline 103 to the millimeter wave transmission chip 110, the millimeter wave transmission chip 110, the signal appearing at the pad 111 ₂ connected to the conductor 103 _2, as a single-ended signal Be treated.

As described above, the millimeter wave transmission chip is configured such that the pads 111 ₁ and 111 ₂ of the single-ended I / F 111 are electrically directly connected to the conductors 103 ₁ and 103 ₂ constituting the coplanar strip line 103, respectively. Since 110 is mounted on the mounting unit 101, high-quality data transmission can be performed while suppressing an increase in circuit scale.

  That is, since the electronic circuit of FIGS. 4 and 5 is not provided with a balun, the scale of the circuit can be suppressed and power consumption can be reduced as compared with the case where a balun is provided.

  In addition, since the single-ended signal handled by the millimeter wave transmission chip 110 is transmitted as a differential signal in the coplanar strip line 103, high-quality data transmission can be performed.

  Further, since a differential signal is transmitted through the coplanar strip line 103, common mode noise (common mode signal) generated in an electronic circuit can be canceled out.

Note that the millimeter wave transmission chip 110, the pad 111 ₂ is a signal terminal, single-ended I / F 111 having two pads 111 ₁ and 111 ₃ is a ground terminal, the single-ended signal is outputted, the RF signal (modulated signal), which is a single-ended signal, is easy to measure (the probe of the measuring instrument that measures millimeter waves supports single-ended signals), the circuit configuration of the CMOS circuit is simple, and low power consumption It is also possible to enjoy the advantages of adopting a single-ended I / F that can be achieved.

  [Second Embodiment]

  FIG. 6 is a perspective view illustrating a configuration example of a second embodiment of an electronic circuit to which the present technology is applied, and FIG. 7 is a cross-sectional view of a single-ended I / F 111 portion of the electronic circuit of FIG. .

  In the figure, portions corresponding to those of the first embodiment shown in FIGS. 4 and 5 are denoted by the same reference numerals, and description thereof will be omitted below as appropriate.

In the second embodiment of FIGS. 6 and 7, the single end I / F 111 is not the _three pads 111 ₁ , 111 ₂ , and 111 ₃ as terminals for the RF unit to exchange single end signals, It differs from the case of the first embodiment of FIGS. 4 and 5 in that it has only _two pads 111 ₁ and 111 ₂ .

When the single-ended I / F 111 has two pads 111 ₁ and 111 ₂ , the single-ended signal handled by the millimeter-wave transmission chip 110 is a coplanar strip line as in the case of having the _three pads 111 ₁ to 111 _3. At 103, it is transmitted as a differential signal.

  Therefore, high-quality data transmission can be performed while suppressing an increase in circuit scale.

As described above, the millimeter wave is used so that the single-ended I / F 111 (the pads 111 ₁ and 111 ₂ thereof) is directly electrically connected to the coplanar strip line 103 (the conductors 103 ₁ and 103 ₂ constituting the coplanar strip line 103). By mounting the transmission chip 110 on the mounting unit 101, high-quality data transmission can be performed while suppressing an increase in circuit scale. However, the coplanar strip line 103, which is a differential transmission path, and a single end When a single-ended I / F 111 that is an I / F of a signal is directly connected, an impedance between the coplanar strip line 103 that is a differential transmission path and a single-ended I / F 111 that is an I / F of a single-ended signal. Matching (coincidence between the impedance of the coplanar strip line 103 and the impedance of the single-ended I / F 111) becomes a problem. There is a door.

  That is, in general, the impedance of the differential transmission line is higher than the impedance of the I / F of the single-ended signal, and if the impedance of the differential transmission line and the impedance of the single-ended signal are significantly different, Reflection due to the mismatch may prevent good quality data transmission.

  Therefore, the impedance (characteristic impedance) of the differential transmission path will be described.

  Here, in general, the impedance of the differential transmission path is, for example, about 120Ω, and the I / F impedance of the single-ended signal is, for example, about 50Ω.

  [Characteristic impedance of differential transmission line]

  FIG. 8 is a cross-sectional view showing the differential transmission path.

  In FIG. 8, the differential transmission line is configured by two rod-shaped conductors arranged in parallel surrounded by a dielectric.

  In addition, in FIG. 8, the cross section of the rod-shaped conductor which comprises a differential transmission path is circular.

  Now, the circular diameter of the cross section of the conductor is represented as d, and the distance between the centers of the circles (center distance) is represented as s. Further, the distance (interval distance) between the two conductors not including the two conductors is represented as s ′ (= sd), and the dielectric constant of the dielectric constituting the differential transmission path is represented as ε. The magnetic permeability is expressed as μ.

  An inductance L and a capacitance C per unit length of the differential transmission path in FIG. 8 are expressed by Expression (1) and Expression (2), respectively.

・・・（１）

... (1)

・・・（２）

... (2)

For simplicity of explanation, assuming that the differential transmission line is lossless, the impedance (characteristic impedance) Z _c of the differential transmission line in FIG. Using the capacitance C in (2), it is expressed by equation (3).

・・・（３）

... (3)

  For example, assuming that the impedance of the single-ended I / F 111 is 50Ω, in order to achieve impedance matching with such a single-ended I / F 111, the differential transmission of FIG. The road impedance needs to be about 50Ω.

Now, assuming that the relative permittivity ε _r (= ε / ε ₀ (ε ₀ is the permittivity of vacuum)) of the dielectric is 2.5, for example, it is expressed by the equation (3) of the differential transmission path in FIG. the impedance Z _c to 50Ω degree that may be, it is necessary to be about 1.23 to s / d.

  In order to set s / d to about 1.23, if the circular diameter of the cross section of the conductor is, for example, 50 μm, the distance (center distance) s between the centers of the circular needs to be 61.5 μm, The distance (interval distance) s ′ (= sd) between the circles not including the conductor is 11.5 μm.

  FIG. 9 is a perspective view and a cross-sectional view showing a coplanar strip line 103 as a differential transmission line.

Coplanar stripline rod-shaped conductors 103 103 constituting _one and 103 ₂ of the cross-section has a generally rectangular.

Now, the longitudinal length of the conductor 103 ₁ and 103 ₂ of the cross-section (width), expressed as w, the conductor 103 ₁ and 103 ₂ between (the cross), free of their conductors 103 ₁ and 103 ₂ The distance (interval distance) is represented as s.

In addition, the relative permittivity of the mounting portion 101 as a dielectric in which the conductors 103 ₁ and 103 ₂ are formed is expressed as ε _r, and the thickness (distance between the front surface and the back surface) of the mounting portion 101 is expressed as h. I will do it.

The impedance (characteristic impedance) Z _c of the coplanar strip line 103 is expressed by Expression (4).

・・・（４）

... (4)

Here, in equation (4), ε _e is represented by equation (5).

・・・（５）

... (5)

Also, k in formula (4) and (5) is represented by the formula (6), k ₁ of the formula (5) is represented by the formula (7).

・・・（６）

... (6)

・・・（７）

... (7)

  Furthermore, K (k) / K ′ (k) in Expression (4) and Expression (5) is expressed by Expression (8).

・・・（８）

... (8)

  Further, the functions K (k ′) and K ′ (k) and the values k and k ′ have the relationship represented by the equation (9).

・・・（９）

... (9)

The values k ₁ and k ′ ₁ have the same relationship as the values k and k ′.

Now, assuming that the mounting part 101 is, for example, a general FR-4 substrate (glass epoxy board), the relative permittivity ε _r of the mounting part 101 is about 4.0, and the thickness h of the mounting part 101 is It is about 1.6mm.

Then, the width w of the conductor 103 ₁ and 103 ₂ are, for example, when a 50 [mu] m, to the impedance of the coplanar stripline 103 to 50Ω about the spacing distance s between the conductors 103 ₁ and 103 _2, It needs to be about 0.23 μm.

Meanwhile, in the future, advances in technology, the spacing distance s between the conductors 103 ₁ and 103 _2, be about 0.23μm is, but is expected to be readily, current density wiring in the technique, the width w and the spacing distance s of the conductor 103 ₁ and 103 ₂ to a value of about 0.23μm far below about 50μm is difficult.

Thus, for example, the width w and the spacing distance s of the conductor 103 ₁ and 103 _2, if as 50μm is employed, the impedance of the coplanar strip track 103, the number 10Ω than 50Ω is the impedance of the single-ended I / F 111 In this case, impedance mismatch between the coplanar strip line 103 and the single-ended I / F 111 may be a problem.

  [Third Embodiment]

  FIG. 10 is a perspective view illustrating a configuration example of the third embodiment of the electronic circuit to which the present technology is applied.

  In the figure, portions corresponding to those of the first embodiment in FIG. 4 are denoted by the same reference numerals, and description thereof will be omitted below as appropriate.

  10 differs from the case of FIG. 4 in that the dielectric 130 is disposed on the coplanar stripline 103. The third embodiment of FIG.

The dielectric 130 is a dielectric having a dielectric constant larger than that of the mounting unit 101 (for example, a dielectric having a relative dielectric constant of about 10), and the dielectric 130 having such a large dielectric constant is a coplanar strip line. by being disposed on the 103, the impedance Z _c of the coplanar stripline 103 of the formula (4), can be made smaller than if the dielectric 130 is not disposed.

Therefore, as the dielectric 130, to reduce the impedance Z _c of the coplanar stripline 103, by adopting a coplanar stripline 103 and the dielectric permittivity such as to match the impedance of the single-ended I / F 111, coplanar The impedance between the strip line 103 and the single-ended I / F 111 can be matched, and it is possible to prevent high-quality data transmission from being hindered by reflection caused by impedance mismatch.

In FIG. 10, a dielectric 130, assumed to be colorless and transparent, co conductors 103 ₁ and 103 ₂ which constitutes a planar stripline 103, as seen through the dielectric 130, conductors 103 ₁ and 103 ₂ is shown.

  FIG. 11 is a diagram for explaining an example of an arrangement pattern in which the dielectric 130 is arranged on the coplanar strip line 103.

  FIG. 11 shows a cross section of an electronic circuit in which the dielectric 130 is disposed on the coplanar strip line 103.

  11A shows the first arrangement pattern, FIG. 11B shows the second arrangement pattern, and FIG. 11C shows the third arrangement pattern.

In the first placement pattern (Fig. 11A), the dielectric 130 is placed two conductors 103 ₁ and 103 ₂ in along the coplanar stripline 103, one of its two conductors 103 ₁ and 103 ₂ consist of conductors 103 ₁ to dielectric width capable of covering the entire up to _two other conductor 103.

In the second arrangement pattern (Fig. 11B), the dielectric 130 is coplanar stripline 103 two conductors 103 ₁ and 103 ₂ in along the are disposed, between the conductors 103 ₁ and 103 ₂ of the two of which it is a dielectric having the same width and length comprising two conductors 103 ₁ and 103 _2.

In the third arrangement pattern (FIG. 11C), the dielectric 130 is arranged along the _two conductors 103 ₁ and 103 ₂ of the coplanar strip line 103 between the _two conductors 103 ₁ and 103 _2. cage, between the conductors 103 ₁ and 103 ₂ of the two, two distances without the conductors 103 ₁ and 103 ₂ (separation distance) has a dielectric having the same width as the.

In the electronic circuit of FIG. 10, the dielectric 130 is arranged on the coplanar strip line 103 so that the impedance Z _c of the coplanar strip line 103 is adjusted to be small. / F 111 and it is assumed that achieving impedance matching, the adjustment to reduce the impedance Z _c of the coplanar stripline 103, other dielectric 130, be carried out by a method other than placing on the coplanar strip track 103 Is possible.

FIG. 12 is a diagram for explaining another method for adjusting the impedance Z _c of the coplanar strip line 103 to be small.

That is, FIG. 12 is a sectional view showing a configuration example of a coplanar stripline 103 configured to conductors 103 ₁ and 103 ₂ mounting portion 101 which is formed a.

In FIG. 12, by increasing the thickness of the conductors 103 ₁ and 103 ₂ , the capacitance of the coplanar strip line 103 is increased, and as a result, the coplanar strip line is larger than when the thickness of the conductors 103 ₁ and 103 ₂ is not increased. The impedance Z _{c of} 103 is adjusted to be small.

In other words, by increasing adjusting the thickness of the conductor 103 ₁ and 103 _2, the dielectric body 130, without disposed on coplanar strip track 103, the impedance matching between the coplanar stripline 103 and the single-ended I / F 111 Can be planned.

Figure 13 is a diagram for explaining still another method to adjust to decrease the impedance Z _c of the coplanar stripline 103.

That is, FIG. 13 is a cross-sectional view and a top view showing a configuration example of a coplanar stripline 103 conductors 103 ₁ and 103 ₂ mounting portion 101 is formed which constitutes the.

In Figure 13, the mounting portion 101, the first layer 101 ₁ and has a two-layer structure of the second layer 101 _2, the first layer 101 _first surface (upper surface), constituting a coplanar stripline 103, It arranged parallel to the two conductors 103 ₁ and 103 ₂ was is formed.

Also, the second layer 101 _{and second} surface (upper surface), co constitutes a planar stripline 103, arranged parallel to the two conductors 131 ₁ and 131 ₂ was found two conductors 103 ₁ and 103 _2, respectively They are formed in parallel.

Then, the conductor 103 ₁ of the first layer 101 ₁ arranged in parallel, and, on the conductor 131 ₁ of the second layer 101 _2, vias 132 ₁ to electrically connect the conductor 103 ₁ and conductor 131 ₁ Is provided.

Similarly, the conductor 103 ₂ of the first layer 101 ₁ arranged in parallel, on the conductor 131 of the _second layer 101 _2, via 132 ₂ for electrically connecting the conductor 103 ₂ and the conductor 131 ₂ Is provided.

As described above, even when the conductors constituting the coplanar strip line 103 are formed in multiple layers, the capacitance of the coplanar strip line 103 becomes large as in the case of FIG. it can be adjusted so as to reduce the impedance Z _c.

In FIG 13, the first layer 101 ₁ of the mounting portion 101 that is configured in two layers, to form a coplanar stripline 103 two conductors 103 ₁ and 103 ₂ which forms a second layer 101 ₂ The two conductors 131 ₁ and 131 ₂ constituting the coplanar strip line 103 are formed. However, the mounting portion 101 has three or more layers, and the coplanar strip line 103 is provided on each of the three or more layers. the two conductors to be configured in layers, with vias, by electrically connecting, it is possible to reduce the impedance Z _c of the coplanar stripline 103.

The adjustment to reduce the impedance Z _c of the coplanar stripline 103, a dielectric 130, a method of placing on the coplanar strip track 103, can be performed in combination with the method described in FIG. 12 or 13 It is.

Further, adjustment to reduce the impedance Z _c of the coplanar stripline 103 may be performed by as described in FIG. 9, to narrow the gap distance s of the conductor 103 ₁ and 103 _2.

  [Fourth embodiment]

  FIG. 14 is a perspective view illustrating a configuration example of a fourth embodiment of an electronic circuit to which the present technology is applied, and FIG. 15 is a cross-sectional view of the single-ended I / F 111 portion of the electronic circuit of FIG. .

  In the figure, portions corresponding to those of the first embodiment shown in FIGS. 4 and 5 are denoted by the same reference numerals, and description thereof will be omitted below as appropriate.

In the fourth embodiment of FIGS. 14 and 15, the mounting portion 101, another land 102 ₁ and 102 _2, that the land 102 ₃ is provided, and in that the stub 201 is provided, FIG. 4 and FIG. 5 are different.

Here, in FIG. 14, in addition to the lands 102 ₁ and 102 ₂ , the pads 111 ₁ to 111 ₃ , and the bumps, the land 102 ₃ is actually connected to the millimeter wave transmission chip 110 as in the case of FIG. In FIG. 14, the land 102 ₁ to 102 ₃ , the pads 111 ₁ to 111 ₃ , and the bumps are illustrated so that the millimeter wave transmission chip 110 is colorless and transparent. .

In FIG. 4 and FIG. 5, the pad 111 ₃ is a ground terminal of the single-ended I / F 111, but was not connected to both, 14 and 15, the pad 111 ₃ and the stub 201, the lands 102 ₃ and via bumps.

  The stub 201 is an L-shaped conductor and is formed on the mounting portion 101.

One end of the L-shaped stub 201, co constitutes a planar stripline 103 is connected to the conductor 103 ₂ connected via the land 102 ₂ and the bump to the pad 111 ₂ as a signal terminal.

The other end of L-shaped stub 201 is connected to the lands 103 _3.

Here, the land 103 _3, through the bump, of the pads 111 ₁ and 111 ₃ are two ground terminals of the single-ended I / F 111, is connected to the conductor 103 ₁ constituting the coplanar stripline 103 It is connected to the pad 111 ₃ those who do not.

  Therefore, since the other end of the stub 201 is connected to the ground, the stub 201 is a short stub.

The length of the L-shaped stub 201 is a quarter of the wavelength λ of the RF signals that stub 201 is transmitted via the formed coplanar strip track 103 connected conductors 103 ₂ (millimeter wave) Λ / 4, which is the length of.

  The stub 201, which is a short stub having a length of λ / 4, functions as a BPF (Band Pass Filter). As a result, low-frequency noise can be removed, and common mode noise in the coplanar strip line 103 is reduced. It can reduce and can improve the passage characteristic of a differential mode (normal mode).

Further, for example, electrical surges, if occurring on the conductor 103 _2, the surge through the stub 201, it is possible to escape to the ground, to improve ESD (Electro-Static Discharge) resistance Can do.

14 and 15, when the millimeter wave transmission chip 110 provided with the single-ended I / F 111 is mounted on the mounting portion 101 in which the coplanar strip line 103 and the stub 201 are formed, the coplanar strip is used. the conductors 103 ₁ and 103 ₂ which constitute the line 103, a single-ended I / F 111 of the pad 111 ₁ and 111 _2, respectively, causes electrically connected directly, that is not connected to the stub 201, the conductor 103 ₂ end in (the other end), by directly electrically connecting the pad 111 ₃ single-ended I / F 111, can be produced.

Further, since the distance between the pad 111 ₂ and 111 ₃ that adjoin in the single-ended I / F 111 of the millimeter wave transmission chip is the distance to the extent that can be ignored by taking the millimeter wave lambda / 4, in FIG. 14, L the shape of the stub 201, the overall length of the stub 201, except that the lambda / 4, L-shaped stub 201, the length excluding the portion parallel to the straight line connecting the pad 111 ₂ and 111 ₃ , Λ / 4.

  [Fifth Embodiment]

  FIG. 16 is a perspective view illustrating a configuration example of a fifth embodiment of an electronic circuit to which the present technology is applied.

  In the figure, portions corresponding to those in the third embodiment in FIG. 10 and those in the fourth embodiment in FIGS. 14 and 15 are denoted by the same reference numerals. The description is omitted as appropriate.

  The fifth embodiment shown in FIG. 16 differs from the cases shown in FIGS. 14 and 15 in that the dielectric 130 described in FIG. 10 is disposed on the coplanar strip line 103.

As described with reference to FIG. 10, the dielectric 130 is a dielectric having a dielectric constant larger than that of the mounting portion 101, and the dielectric 130 having such a large dielectric constant is disposed on the coplanar strip line 103. As a result, the impedance Z _c of the coplanar strip line 103 represented by the equation (4) can be made smaller than when the dielectric 130 is not disposed.

  As a result, the impedances of the coplanar stripline 103 and the single-ended I / F 111 are matched, and it is possible to prevent high-quality data transmission from being hindered by reflection caused by impedance mismatch.

  Note that the impedance matching between the coplanar stripline 103 and the single-ended I / F 111 can be achieved by, for example, the method described with reference to FIGS.

  FIG. 17 is a diagram illustrating a result of simulation performed on the electronic circuit of FIG.

That is, FIG. 17 shows the S parameter S ₂₁ of the electronic circuit of FIG. 16 (hereinafter also referred to as a circuit with stubs) and the S parameter S _{21 of} the circuit (hereinafter also referred to as a circuit without stubs) obtained by removing the stub 201 from the electronic circuit of FIG. It shows the parameters S _21.

17, the horizontal axis represents frequency and the vertical axis represents the S parameter S _21.

Further, in FIG. 17, the solid line represents the S parameter S ₂₁ of the differential mode of the coplanar strip track 103 (Diff. Mode), the dotted line represents an S parameter S ₂₁ of the common mode (Comm. Mode).

Further, in FIG. 17, triangles represent the S parameter S ₂₁ of the stub there circuit, squares, represents the S parameter S ₂₁ without stubs circuit.

According to FIG. 17, the differential mode S parameter S ₂₁ (indicated by a triangle and a solid line) of a circuit with a stub is compared with a frequency band of 90 GHz or higher or a frequency band of 30 GHz or lower in a frequency band centered on 60 GHz. Therefore, when the stub 201 is present, in the differential mode, it is possible to improve the frequency band around 60 GHz, that is, the millimeter wave band pass characteristic (transfer characteristic).

  [Sixth Embodiment]

  FIG. 18 is a perspective view illustrating a configuration example of a sixth embodiment of an electronic circuit to which the present technology is applied, and FIG. 19 is a cross-sectional view of a single-ended I / F 111 portion of the electronic circuit of FIG. .

  In the figure, in the case of the second embodiment shown in FIGS. 6 and 7 and the fourth embodiment shown in FIGS. 14 and 15, the same reference numerals are given to the portions corresponding to those in the fifth embodiment shown in FIG. In the following, description thereof will be omitted as appropriate.

In the sixth embodiment shown in FIGS. 18 and 19, as in the case of FIGS. 6 and 7, the single-ended I / F 111 exchanges a single-ended signal with an RF unit (not shown) built in the millimeter wave transmission chip 110. 16 is different from the fifth embodiment in FIG. 16 in that it has only _two pads 111 ₁ and 111 ₂ instead of _three pads 111 ₁ , 111 ₂ , and 111 ₃ as terminals to be used.

As described above, in the sixth embodiment of FIGS. 18 and 19, for single-ended I / F 111 is, has two pads 111 ₁ and 111 _2, which has no pads 111 ₃ is a ground terminal The other end of the stub 201 is connected to a path 211 that is another ground terminal of the millimeter wave transmission chip 110.

That is, in FIG. 18 and FIG. 19 are provided in the millimeter wave transmission chip 110, there are shown a pad 211, another ground terminal pad 111 ₁ is a ground terminal which constitutes a single-ended I / F 111 .

  Further, in FIGS. 18 and 19, when the millimeter wave transmission chip 110 is mounted on the mounting unit 101, the position on the mounting unit 101 corresponding to the pad 211 of the millimeter wave transmission chip 110 is A land 212 formed at a position relatively far from F111 is shown.

In the sixth embodiment of FIGS. 18 and 19, the mounting portion 101, the other end of the L-shaped stub 201 of which one end is connected to the conductor 103 ₂ is connected to the land 212.

Furthermore, in the sixth embodiment of FIGS. 18 and 19, the pad 211 of the millimeter wave transmission chip and the lands 212 of the mounting portion 101 are connected via the bump, thus, one end to the conductor 103 ₂ The other end of the connected L-shaped stub 201 is connected to the ground via the land 212, the bump, and the pad 211.

As described above, when the one end and the other end of the L-shaped stub 201 connected to the conductor 103 _2, connected to the pad 211 is a ground terminal which does not constitute a single-ended I / F 111 of the millimeter wave transmission chip 110 also, when connecting the other end of the L-shaped stub 201 of which one end is connected to the conductor 103 _2, the pad 111 ₃ is a ground terminal which constitutes a single-ended I / F 111 of the millimeter wave transmission chip 110 (FIG. 14, 15, and 16), low frequency noise on the coplanar strip line 103 can be removed, common mode noise can be reduced, differential mode pass characteristics can be improved, and ESD resistance can be improved. it can.

  Here, the length of the L-shaped stub 201 is λ / 4 as described with reference to FIGS. 14 and 15.

The pad 111 ₂ single-ended I / F 111 of the millimeter wave transmission chip 110, the single-ended I / F 111 the distance between the pad 211 is a ground terminal that does not constitute the pad 111 ₂ and the pad 111 adjacent single-ended I / F 111 _Since the distance is not negligible for λ / 4 of the millimeter wave, such as the distance to ₃ , the L-shaped stub 201 in FIG. Need to be 4.

  As described above, the common mode noise can be reduced by providing the stub 201 having a length of λ / 4. An embodiment in which the common mode noise is reduced by another method will be described.

  [Seventh embodiment]

  FIG. 20 is a top view (plan view) and a cross-sectional view illustrating a configuration example of a seventh embodiment of an electronic circuit to which the present technology is applied.

  In the figure, portions corresponding to those of the fifth embodiment in FIG. 16 are denoted by the same reference numerals, and description thereof will be omitted below as appropriate.

  In FIG. 20 (the same applies to FIG. 22 described later), the ground metal provided on the back surface of the mounting portion 101, which is not shown in the first to sixth embodiments, is used as the ground. Illustrated as metal 251.

In the seventh embodiment, the thin film of metal as a ground metal 251, of the back side of the mounting portion 101, co conductors 103 ₁ and 103 ₂ which constitutes a planar stripline 103, pad 111 of the single-ended I / F 111 ₁ and 1112 are provided in a region excluding at least a region corresponding to a portion to which the _two are connected.

Thus, in the seventh embodiment, among the back surface side of the mounting portion 101, co conductors 103 ₁ and 103 ₂ which constitutes a planar stripline 103, and the single-ended I / F 111 of the pad 111 ₁ and 111 ₂ are connected In the region corresponding to the portion that is present, the metal of the thin film as the ground metal 251 does not exist.

Note that the ground metal 251 as shown in FIG. 20 is a rectangular metal including a region corresponding to the pads 111 ₁ to 111 ₃ of the single-ended I / F 111 after a thin metal is provided on the entire back surface of the mounting unit 101, for example. It can be configured by removing the metal in the shape area.

As described above, of the rear surface side of the mounting portion 101, co conductors 103 ₁ and 103 ₂ which constitutes a planar stripline 103, the portion where the pads 111 ₁ and 111 ₂ of the single-ended I / F 111 is connected By providing a metal as the ground metal 251 in a region excluding at least the corresponding region, that is, at least the conductors 103 ₁ and 103 ₂ and the pads 111 ₁ and 111 ₂ on the back side of the mounting unit 101 are connected. The common mode noise of the coplanar strip line 103 can be suppressed by not providing a ground in a region corresponding to the portion that is formed.

  That is, FIG. 21 is a diagram showing the result of simulation performed on the electronic circuit of FIG.

Here, FIG. 21 shows an S parameter S ₂₁ of the electronic circuit of FIG. 20 (hereinafter also referred to as a circuit without ground) and a region where the ground metal 251 does not exist on the back side of the mounting portion 101 in the electronic circuit of FIG. The S parameter S _{21 of} a circuit provided with a metal serving as a ground (hereinafter also referred to as a circuit with a ground) is shown.

Incidentally, in FIG. 21, the solid line represents the differential mode S-parameter S ₂₁ of the coplanar strip track 103, the dotted line represents the S parameter S ₂₁ of the common mode.

Further, in FIG. 21, triangles, ground there represents S parameter S ₂₁ of the circuit, squares, represents the S parameter S ₂₁ without ground circuit.

According to FIG. 21, the common-mode S-parameter S ₂₁ (indicated by a square and a dotted line) of a circuit without ground is in the millimeter wave band of about 50 GHz to 100 GHz, and in the case of a circuit with a ground (indicated by a triangle and a dotted line). It can be confirmed that the common mode noise in the millimeter wave band can be suppressed.

  [Eighth Embodiment]

  FIG. 22 is a top view (plan view) and a cross-sectional view illustrating a configuration example of an electronic circuit according to an eighth embodiment to which the present technology is applied.

  In the figure, portions corresponding to those in the fifth embodiment in FIG. 16 and the seventh embodiment in FIG. 20 are denoted by the same reference numerals, and description thereof will be omitted below as appropriate. .

Figure In the seventh embodiment 20, the thin film of metal as a ground metal 251, of the back side of the mounting portion 101, the conductor 103 ₁ and 103 ₂ which constitute the coplanar stripline 103, single-ended I / F 111 While the pad 111 ₁ and 111 ₂ is provided on at least excluding the area an area corresponding to the portion that is connected, in the eighth embodiment, the thin film as the ground metal 251 metal of the mounting portion 101 The entire back surface side includes, for example, a region corresponding to a portion where the conductors 103 ₁ and 103 ₂ constituting the coplanar strip line 103 and the pads 111 ₁ and 111 _{2 of} the single-ended I / F 111 are connected. Is provided.

However, in the eighth embodiment, co a planar stripline 103 conductors 103 ₁ and 103 ₂ which constitutes a includes a portion in which the single-ended I / F 111 pads 111 ₁ and 111 ₂ are connected, coplanar stripline 103 A dielectric 261 having a dielectric constant larger than that of the dielectric 130 is disposed in a part of the upper region.

That is, in the eighth embodiment, includes a portion where the conductor 103 ₁ and 103 ₂ and the pads 111 ₁ and 111 ₂ are connected to the partial region of the coplanar stripline 103, on the coplanar stripline 103 A dielectric 261 having a dielectric constant larger than that of the dielectric 130 disposed in another region is disposed.

  Here, as the dielectric 130, for example, a dielectric having a relative dielectric constant of about 10 is employed, and as the dielectric 261, for example, a dielectric (dielectric ceramics or the like) having a relative dielectric constant of about 24 is employed. be able to.

  As described above, the dielectric disposed in the other region on the coplanar stripline 103 in a part of the region on the coplanar stripline 103 including the connection portion between the coplanar stripline 103 and the single-ended I / F 111. By disposing the dielectric 261 having a dielectric constant larger than 130, common mode noise of the coplanar strip line 103 can be suppressed.

  That is, FIG. 23 is a diagram illustrating a result of simulation performed on the electronic circuit of FIG.

23 is similar to the dielectric 130 instead of the dielectric 261 in the S parameter S ₂₁ of the electronic circuit of FIG. 22 (hereinafter also referred to as a circuit with a large dielectric) and the electronic circuit of FIG. The S parameter S _{21 of} a circuit in which a dielectric is disposed (hereinafter also referred to as a circuit without a large dielectric) is shown.

In FIG. 23, the solid line represents the differential mode S parameter S ₂₁ for the coplanar strip line 103, and the dotted line represents the common mode S parameter S ₂₁ .

Further, in FIG. 23, the triangle represents the S parameter S _{21 of the} circuit without a large dielectric, and the square represents the S parameter S _{21 of the} circuit with a large dielectric.

According to FIG. 23, the common mode S parameter S ₂₁ (indicated by a square and a dotted line) of a circuit with a large dielectric is a millimeter wave band of about 25 GHz to 80 GHz and a circuit without a large dielectric (a triangle and a dotted line). It can be confirmed that the common mode noise in the millimeter wave band can be suppressed.

  The embodiments of the present technology are not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present technology.

  That is, in this embodiment, data is transmitted by millimeter waves, but the frequency band used for data transmission is not limited to millimeter waves.

  In this embodiment, a coplanar strip line is used as a differential transmission path for transmitting a differential signal. However, a transmission path other than the coplanar strip line can be used as the differential transmission path.

  Furthermore, the exchange of millimeter waves can be performed either wirelessly or by wire.

  In addition, this technique can take the following structures.

[1]
A semiconductor chip provided with a single-ended I / F having a pad through which a single-ended signal is exchanged;
A differential transmission path for transmitting a differential signal and a stub connected to the differential transmission path are formed, and a pad of the single-ended I / F is formed on a conductor constituting the differential transmission path. An electronic circuit comprising: a mounting portion on which the semiconductor chip is mounted so as to be electrically connected directly.
[2]
The electronic circuit according to [1], wherein the stub is a stub having a length of 1/4 of a wavelength of a signal transmitted through the differential transmission path.
[3]
The single-ended I / F has a signal pad for exchanging signals and a ground pad connected to the ground,
The differential transmission line has two conductors arranged in parallel,
The semiconductor chip so that the signal pad is connected to one of the two conductors, and the ground pad is connected to the other of the two conductors. Is mounted on the mounting part,
The electronic circuit according to [1] or [2], wherein the stub is connected to the one of the two conductors connected to the signal pad.
[4]
The electronic circuit according to [3], wherein the stub is a short stub in which an end portion of the stub that is not connected to the one conductor is connected to a ground.
[5]
The single-ended I / F has one signal pad and two ground pads,
The signal pad and the one conductor are connected,
One of the two ground pads is connected to the other conductor,
When the semiconductor chip is mounted on the mounting portion, the end of the stub that is not connected to the one conductor is connected to the two ground pads when the semiconductor chip is mounted on the mounting portion. The electronic circuit according to [3] or [4], wherein the electronic circuit is formed so as to be connected to the other ground pad.
[6]
The electronic circuit according to any one of [1] to [5], wherein a dielectric is disposed on the differential transmission path.
[7]
The electronic circuit according to [6], wherein the dielectric is a dielectric having a dielectric constant that matches the impedance of the single-ended I / F and the impedance of the differential transmission path.
[8]
The electronic circuit according to [6] or [7], wherein the dielectric is a dielectric having a dielectric constant higher than that of the mounting portion.
[9]
The mounting part has a flat plate shape,
The semiconductor chip is mounted on one surface side of the flat plate-shaped mounting portion,
Of the other one side of the flat plate-shaped mounting portion, in a region at least excluding a region corresponding to a portion where the conductor constituting the differential transmission path and the pad of the single-ended I / F are connected A ground metal serving as a ground is provided. The electronic circuit according to any one of [1] to [8].
[10]
The other region on the differential transmission path is included in a part of the region on the differential transmission path, including a portion where the conductor constituting the differential transmission path and the pad of the single-ended I / F are connected. The electronic circuit according to any one of [6] to [9], wherein a dielectric having a dielectric constant greater than that of the dielectric disposed on the substrate is disposed.
[11]
The electronic circuit according to any one of [1] to [10], wherein the differential transmission path is a coplanar strip line.
[12]
The electronic circuit according to any one of [1] to [11], wherein the single-ended signal is a millimeter-wave band signal.
[13]
A semiconductor chip provided with a single-ended I / F having pads for exchanging single-ended signals is formed with a differential transmission path for transmitting a differential signal and a stub connected to the differential transmission path. An electronic circuit manufacturing method in which the pad of the single-ended I / F is electrically connected directly to a conductor constituting the differential transmission path when mounted on a mounting portion on which the semiconductor chip is mounted.
[14]
A differential transmission path for transmitting a differential signal and a stub connected to the differential transmission path are formed,
A dielectric is disposed on the differential transmission path,
A mounting member on which a semiconductor chip provided with a single-ended I / F having a pad for exchanging single-ended signals is mounted.
[15]
The mounting member according to [14], wherein the stub is a stub having a length of 1/4 of a wavelength of a signal transmitted through the differential transmission path.
[16]
The single-ended I / F has a signal pad for exchanging signals and a ground pad connected to the ground,
The differential transmission line has two conductors arranged in parallel,
The semiconductor chip so that the signal pad is connected to one of the two conductors, and the ground pad is connected to the other of the two conductors. Is implemented,
The mounting member according to [14] or [15], wherein the stub is connected to the one of the two conductors connected to the signal pad.
[17]
The mounting member according to [16], wherein the stub is a short stub in which an end portion of the stub that is not connected to the one conductor is connected to a ground.
[18]
The single-ended I / F has one signal pad and two ground pads,
The signal pad and the one conductor are connected,
One of the two ground pads is connected to the other conductor,
When the semiconductor chip is mounted on the mounting portion, the end of the stub that is not connected to the one conductor is connected to the two ground pads when the semiconductor chip is mounted on the mounting portion. The mounting member according to [16] or [17], wherein the mounting member is formed so as to be connected to the other ground pad.
[19]
The mounting member according to any one of [14] to [18], wherein the dielectric is a dielectric having a dielectric constant that matches the impedance of the single-ended I / F and the impedance of the differential transmission path.
[20]
The mounting member according to any one of [14] to [19], wherein the dielectric is a dielectric having a dielectric constant greater than a dielectric constant of the mounting portion.

10 electronic circuit 11 mounted unit, 12 ground metal, ₁₃ 1, 13 ₂ via, 14 microstrip line 15 antenna, 20 millimeter wave transmission chip, 21 single-ended I / F, 21 ₁ to 21 ₃ pads, 22 transmission unit , 31 amplifier, 32 an oscillator, 33 a mixer, 34 an amplifier, 40 an electronic circuit, 41 mounting portion, 42 ground metal, ₄₃ 1, 43 ₂ via, 44 microstrip line 45 antenna, 50 millimeter wave transmission chip, 51 single-ended I / F, 51 ₁ to 51 ₃ pads, 52 receiving unit, 61 amplifier, 62 oscillator, 63 mixer, 64 amplifier, 70 first layer, 80 second layer, 101 mounting unit, 101 ₁ first layer, 101 ₂ second layers, 102 ₁ to 102 ₃ lands 103 coplanar stripline 103 , 103 ₂ conductors, 110 millimeter wave transmission chip, 111 single-ended I / F, 111 ₁ to 111 ₃ pads, 121 silicon, 122 a silicon oxide film, 130 a dielectric, ₁₃₁ 1, 131 ₂ conductors, ₁₃₂ 1, 132 ₂ via , 201 stub, 211 pad, 212 land, 251 ground metal, 261 dielectric

Claims (20)

A semiconductor chip provided with a single-ended I / F having a pad through which a single-ended signal is exchanged;
A differential transmission path for transmitting a differential signal and a stub connected to the differential transmission path are formed, and a pad of the single-ended I / F is formed on a conductor constituting the differential transmission path. An electronic circuit comprising: a mounting portion on which the semiconductor chip is mounted so as to be electrically connected directly. The electronic circuit according to claim 1, wherein the stub is a stub having a length of ¼ of a wavelength of a signal transmitted through the differential transmission path. The single-ended I / F has a signal pad for exchanging signals and a ground pad connected to the ground,
The differential transmission line has two conductors arranged in parallel,
The semiconductor chip so that the signal pad is connected to one of the two conductors, and the ground pad is connected to the other of the two conductors. Is mounted on the mounting part,
The electronic circuit according to claim 2, wherein the stub is connected to the one of the two conductors connected to the signal pad. The electronic circuit according to claim 3, wherein the stub is a short stub in which an end portion of the stub that is not connected to the one conductor is connected to a ground. The single-ended I / F has one signal pad and two ground pads,
The signal pad and the one conductor are connected,
One of the two ground pads is connected to the other conductor,
When the semiconductor chip is mounted on the mounting portion, the end of the stub that is not connected to the one conductor is connected to the two ground pads when the semiconductor chip is mounted on the mounting portion. The electronic circuit according to claim 4, wherein the electronic circuit is formed so as to be connected to the other ground pad. The electronic circuit according to claim 4, wherein a dielectric is disposed on the differential transmission path. The electronic circuit according to claim 6, wherein the dielectric is a dielectric having a dielectric constant that matches the impedance of the single-ended I / F and the impedance of the differential transmission path. The electronic circuit according to claim 6, wherein the dielectric is a dielectric having a dielectric constant greater than that of the mounting portion. The mounting part has a flat plate shape,
The semiconductor chip is mounted on one surface side of the flat plate-shaped mounting portion,
Of the other one side of the flat plate-shaped mounting portion, in a region at least excluding a region corresponding to a portion where the conductor constituting the differential transmission path and the pad of the single-ended I / F are connected The electronic circuit according to claim 6, wherein a ground metal serving as a ground is provided. The other region on the differential transmission path is included in a part of the region on the differential transmission path, including a portion where the conductor constituting the differential transmission path and the pad of the single-ended I / F are connected. The electronic circuit according to claim 6, wherein a dielectric having a dielectric constant larger than that of the dielectric disposed on the substrate is disposed. The electronic circuit according to claim 1, wherein the differential transmission path is a coplanar strip line. The electronic circuit according to claim 1, wherein the single-ended signal is a millimeter-wave band signal. A semiconductor chip provided with a single-ended I / F having pads for exchanging single-ended signals is formed with a differential transmission path for transmitting a differential signal and a stub connected to the differential transmission path. An electronic circuit manufacturing method in which the pad of the single-ended I / F is electrically connected directly to a conductor constituting the differential transmission path when mounted on a mounting portion on which the semiconductor chip is mounted. A differential transmission path for transmitting a differential signal and a stub connected to the differential transmission path are formed,
A dielectric is disposed on the differential transmission path,
A mounting member on which a semiconductor chip provided with a single-ended I / F having a pad for exchanging single-ended signals is mounted. The mounting member according to claim 14, wherein the stub is a stub having a length of ¼ of a wavelength of a signal transmitted through the differential transmission path. The single-ended I / F has a signal pad for exchanging signals and a ground pad connected to the ground,
The differential transmission line has two conductors arranged in parallel,
The semiconductor chip so that the signal pad is connected to one of the two conductors, and the ground pad is connected to the other of the two conductors. Is implemented,
The mounting member according to claim 15, wherein the stub is connected to the one of the two conductors connected to the signal pad. The mounting member according to claim 16, wherein the stub is a short stub in which an end of the stub that is not connected to the one conductor is connected to a ground. The single-ended I / F has one signal pad and two ground pads,
The signal pad and the one conductor are connected,
One of the two ground pads is connected to the other conductor,
When the semiconductor chip is mounted on the mounting portion, the end of the stub that is not connected to the one conductor is connected to the two ground pads when the semiconductor chip is mounted on the mounting portion. The mounting member according to claim 17, wherein the mounting member is connected to the other ground pad. The mounting member according to claim 14, wherein the dielectric is a dielectric having a dielectric constant that matches the impedance of the single-ended I / F and the impedance of the differential transmission path. The mounting member according to claim 14, wherein the dielectric is a dielectric having a dielectric constant greater than a dielectric constant of the mounting portion.

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