JP2013098842A - Vibrator and electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the size of a contour vibration disc vibrator configured so that a disc-like diaphragm vibrates in wine glass mode.SOLUTION: A through hole 11 is formed in a diaphragm 10 at a position where an angle θ of 45° is formed for a straight line L which connects first electrodes 21, 21 and passes through the center of the diaphragm 10 when viewed in plan. In other words, the through hole 11 is formed at a position of the diaphragm 10 becoming a node of vibration (a position that does not inhibit vibration of the diaphragm 10), and a support 30 is provided so as to connect the inner wall surface of the through hole 11 and a base substrate (a conductive film 5).

Description

  The present invention relates to a contour vibration type vibrator (resonator) configured such that a plate-like diaphragm vibrates in a wine glass mode, and an electronic component including the vibrator.

  As one of methods for manufacturing a disk vibrator configured such that a disk-shaped (plate-like) diaphragm vibrates in a wine glass mode (Compound (2, 1) mode), the disk vibrator is downsized. For this purpose, for example, a manufacturing method using MEMS (Micro Electro Mechanical Systems) is used. That is, in this manufacturing method, the disk vibrator is formed by alternately laminating, for example, a polycrystalline silicon film and a silicon oxide film (SiO2) over an insulating film on a silicon (Si) substrate. It is formed by processing a film or a silicon oxide film in combination with photolithography or etching.

  Thus, in the disk vibrator, the diaphragm is supported by the polycrystalline silicon film formed on the upper layer side of the insulating film on the silicon substrate via the holding beam (support part), and the diaphragm is excited and a signal is output. For example, electrodes are formed so as to be arranged at four locations around the diaphragm. The holding beam extends from the silicon substrate toward the diaphragm via, for example, gaps between adjacent electrodes so as not to hinder the vibration of the diaphragm, and a vibration node is formed on the outer peripheral surface of the diaphragm. It is connected to the part which becomes. Therefore, the disk vibrator has a configuration in which the holding beam extends radially from the diaphragm through a gap between adjacent electrodes when viewed in a plan view. The resonance frequency of the disk vibrator is determined according to, for example, the diameter dimension of the diaphragm, and specifically, the resonance frequency decreases as the diameter dimension increases.

  Here, in order to further reduce the size of the disk vibrator, as described above, the holding beam is arranged on the outer peripheral side of the diaphragm, so that the disk vibrator has an extra space corresponding to the holding beam. It can be said that is provided. Further, if the resonance frequency of the disk vibrator is lowered, the disk vibrator (diaphragm) becomes large. Patent Documents 1 and 2 describe a disk resonator, but the miniaturization of the disk resonator has not been studied.

Special table 2006-518119 JP 2006-319387

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a contour vibration type vibrator configured so that a plate-like diaphragm vibrates in a wine glass mode. It is to provide a technique capable of achieving the above.

The vibrator of the present invention is
In a contour vibration type vibrator having a diaphragm that is supported on a base substrate via a support portion and to which a bias voltage is applied,
In order to vibrate the diaphragm in a wine glass mode, a pair of input electrodes arranged to face each other through the diaphragm in plan view;
A pair of output electrodes arranged to face each other through the diaphragm in plan view in order to extract an output signal based on the vibration of the diaphragm;
A through hole that is formed at a position that becomes a vibration node in the diaphragm, and penetrates the diaphragm in the thickness direction,
The support portion is provided so as to connect an inner wall surface of the through hole and the base substrate.

The vibrator may be configured as follows. Assuming that a straight line passing through the center when the pair of input electrodes is connected and the vibrator is viewed in a plane is L, the angle θ between the through-hole and the straight line L when viewed in a plane is 45 °. The structure formed so that it may extend toward the outer peripheral part side from the center part side of the said diaphragm in the position which becomes.
The said support part is the structure connected to the inner wall surface by the side of the inner peripheral part of the said diaphragm in the said through-hole, or the inner wall surface by the side of an outer peripheral part.
The said support part is the structure arrange | positioned in four places so that it may mutually space apart in the circumferential direction of the said diaphragm at equal intervals.
The electronic component of the present invention is
The vibrator is provided.

  In the contour vibration type vibrator in which the diaphragm vibrates in the wine glass mode, the present invention forms a through hole at a position serving as a vibration node in the diaphragm, and the gap between the inner wall surface of the through hole and the base substrate is formed. A support portion (support beam and support column) that supports the diaphragm is provided so as to be connected. Therefore, a space for the support portion is not necessary on the outer peripheral side of the diaphragm. In addition, since the rigidity of the diaphragm is lowered and the resonance frequency is lowered by forming the through hole, if the diaphragm is oscillated at the same resonance frequency as that when the through hole is not formed, the through hole is formed. In order to increase the resonance frequency by an amount corresponding to the decrease amount of the resonance frequency based on this, the diameter dimension of the diaphragm is reduced. Therefore, the vibrator can be reduced in size.

It is a perspective view which shows an example of the disc vibrator of this invention. It is a top view which shows the said disk vibrator. It is a longitudinal cross-sectional view which shows the said disk vibrator. FIG. 5 is a partially enlarged perspective view showing a support beam that supports the disk vibrator. It is a top view which shows typically a mode that the said disk vibrator vibrates. It is a longitudinal cross-sectional view which shows the manufacturing method of the said disk vibrator. It is a top view which shows the manufacturing method of the said disk vibrator. It is a longitudinal cross-sectional view which shows the manufacturing method of the said disk vibrator. It is a top view which shows the manufacturing method of the said disk vibrator. It is a longitudinal cross-sectional view which shows the manufacturing method of the said disk vibrator. It is a longitudinal cross-sectional view which shows the manufacturing method of the said disk vibrator. It is a longitudinal cross-sectional view which shows the manufacturing method of the said disk vibrator. It is a circuit diagram which shows an example of the electronic component to which the said disk vibrator is applied. It is a top view which shows the other example of the said disk vibrator. It is a top view which shows the other example of the said disk vibrator. It is a top view which shows the other example of the said disk vibrator. FIG. 6 is a longitudinal sectional view showing another example of the disk vibrator.

  An example of an embodiment of the vibrator of the present invention will be described with reference to FIGS. 1 to 5 in which the vibrator is applied to, for example, a filter. As schematically shown in FIG. 1, the vibrator is formed on a base substrate 1 made of, for example, silicon (Si) or the like, and includes a disk (disk) -like diaphragm 10 and the diaphragm 10. A plurality of, for example, four electrodes 20 are provided around the periphery. The diaphragm 10 is supported so as to float from the base substrate 1 by a support portion 30 described later, and is configured to resonate (vibrate) in the wine glass mode by the electrode 20. Accordingly, these electrodes 20 are arranged so as to sandwich the diaphragm 10 from the front-rear direction (X direction in FIG. 2) and the left-right direction (Y direction in FIG. 2) when viewed in a plane. Between the base substrate 1 and the diaphragm 10 and the electrode 20, a silicon film 2 doped with phosphorus (P), a silicon oxide (Si—O) film 3, and a silicon nitride (Si—N) film 4. Are stacked in this order from the bottom.

  The diaphragm 10 has a disk shape with a diameter of about 76 μm, for example, and is made of polysilicon, for example, as will be described later. As shown in FIGS. 2 and 3, the diaphragm 10 has a plurality of locations such as through holes (slots) 11 penetrating the diaphragm 10 in the thickness direction so as to be separated from each other in the circumferential direction of the diaphragm 10. The support portions 30 described above are provided at four locations, and are provided between the inner wall surfaces of the through holes 11 and the base substrate 1 (specifically, the conductive film 5). Therefore, these through holes 11 are arranged so that the support portion 30 does not hinder the vibration of the diaphragm 10.

  That is, the diaphragm 10 vibrates in a wine glass mode by a pair of electrodes 20 and 20 (first electrodes 21 and 21) disposed so as to face each other in the left-right direction of the diaphragm 10 as will be described later. At this time, as shown in FIG. 5, when the straight line passing through the center of the diaphragm 10 is connected to the pair of electrodes 20 and 20, the angle θ between the straight line L and the diaphragm 10 is 45 °. At positions, vibration nodes (nodes) are formed along the radial direction of the diaphragm 10. Therefore, each of the through holes 11 is a plan view of the diaphragm 10 along the radial direction of the diaphragm 10 (the direction extending from the center side to the outer peripheral side) at the position where the node is formed. It is formed between a position closer to the outer peripheral side, for example, about 0.001 to 0.010 μm than the center of the time, and a position inside, for example, about 0.001 to 0.010 μm from the outer edge of the diaphragm 10. ing. FIG. 5 schematically shows the disk vibrator.

  The diaphragm 10 is supported on the inner wall surface of each through-hole 11 by the supporting portion 30 described above so as to float from the base substrate 1. That is, when the diaphragm 10 is viewed in plan, as shown in FIG. 2, the inner wall surface on the outer peripheral side of each through-hole 11 has a support beam 31 that extends horizontally toward the center of the diaphragm 10 on one end side. The base end side is connected, and an opening 32 penetrating the support beam 31 in the vertical direction is formed on the one end side as shown in FIG. Accordingly, the base end side of the support beam 31 is also disposed at a position where the node of the diaphragm 10 is formed.

  A support column (anchor) 33 extending in the vertical direction is fitted in the opening 32, so that the lower end portion of the support column 33 has substantially the same shape as the diaphragm 10 as shown in FIG. Are connected to a conductive film 5 formed on the silicon nitride film 4. Thus, the diaphragm 10 is supported on the base substrate 1 (conductive film 5) via the support beams 31 by the support pillars 33 formed at four locations along the circumferential direction at a position near the center of the diaphragm 10. Has been. The support portion 30 including the support beam 31 and the support pillar 33 and the conductive film 5 are each made of polysilicon or the like. 3 shows a longitudinal sectional view in which the disk vibrator is cut in the diameter direction of the diaphragm 10 in FIG. 2, and the electrodes 20 and 20 are also shown in a longitudinal sectional view.

As shown in FIGS. 1 and 2, the side wall surface of the conductive film 5 on the lower side of the diaphragm 10 is directed from the conductive film 5 toward the outer peripheral side through a region between the electrodes 20, 20 adjacent to each other. One end side of the extending electrode 6 is connected. As will be described later, the extraction electrode 6 is a port for applying a DC bias voltage to the diaphragm 10 when the diaphragm 10 is vibrated.
Further, as shown in FIG. 3, the silicon film 2 on the lower layer side is disposed at a position spaced apart from the conductive film 5 and the extraction electrode 6 through the recesses 7 formed in the silicon oxide film 3 and the silicon nitride film 4. A grounding port 8 connected to is provided. This ground port 8 is for connecting, for example, a ground terminal of a measuring instrument used when evaluating characteristics such as a resonance frequency of the disk vibrator after manufacturing the disk vibrator. For example, it is provided in two places. The base substrate 1 on the lower layer side of the silicon film 2 is grounded via an electrode portion (not shown).

  Around the diaphragm 10, approximately box-shaped electrodes 20 are arranged at four positions so as to be spaced apart from each other at equal intervals in the circumferential direction of the diaphragm 10. On the other hand, they are formed so as to face each other through the gap region (so as not to contact the diaphragm 10). These four electrodes 20 face each other through the diaphragm 10 in the front-rear direction when the two electrodes 20, 20 are viewed in a plane, and the remaining two electrodes 20, 20 pass through the diaphragm 10 in the left-right direction. Are arranged so as to face each other. Among the electrodes 20 and 20 facing each other, the electrodes 20 and 20 arranged in the left-right direction are respectively referred to as first electrodes 21 and 21, and the electrodes 20 and 20 arranged in the front-rear direction are respectively second electrodes. 22 and 22, the first electrodes 21 and 21 are connected to each other by a beam portion 10 a formed so as to be separated from the diaphragm 10 in the upper region of the diaphragm 10. The beam portion 10a is disposed so as not to interfere with the support pillar 33 described above. Further, as shown in FIG. 2, the first electrodes 21 and 21 are connected to the first electrodes 21 and 21 by conductive paths 23 such as wires connected to the upper surfaces of the first electrodes 21 and 21, respectively. An input port 24 for inputting an input signal to 21 is connected.

  The second electrodes 22 and 22 are respectively formed such that the upper end portion on the diaphragm 10 side extends upward and the upper end portion extends horizontally toward the center side of the diaphragm 10. Yes. One end side of a conductive path 23 such as a wire is connected to, for example, the upper surface side of the second electrodes 22 and 22, and the other end side of the conductive path 23 detects (takes out) vibration of the diaphragm 10. Output port 25 is connected. Accordingly, the first electrodes 21 and 21 each serve as an input electrode, and the second electrodes 22 and 22 each serve as an output electrode.

（Ｅ：ヤング率、ρ：密度） In the disk vibrator configured as described above, when an input signal is input to the first electrodes 21 and 21 while applying a direct-current bias voltage (Vp) to the diaphragm 10, the first electrode 21 and the vibration with the first electrodes 21 and 21 are vibrated. Due to the electrostatic coupling with the plate 10, the vibration plate 10 vibrates in a wine glass mode as shown in FIG. Specifically, the diaphragm 10 repeats an operation that expands in the front-rear direction and contracts in the left-right direction and an operation that contracts in the front-rear direction and expands in the left-right direction at a predetermined frequency. This resonance frequency is uniquely determined by the rigidity (Young's modulus) of the diaphragm 10 and the diameter dimension of the diaphragm 10, and specifically becomes lower as the rigidity of the diaphragm 10 is smaller (formula (1)). (Refer to FIG. 4) Further, the larger the diameter dimension of the diaphragm 10, the lower the value. In this example, the resonance frequency is about 52.0 MHz, and is extracted as an output signal by the second electrodes 22 and 22 by electrostatic coupling between the diaphragm 10 and the second electrodes 22 and 22.

(E: Young's modulus, ρ: density)

Here, since the through-hole 11 is formed in the diaphragm 10, the rigidity of the diaphragm 10 is lower than that in the case where the through-hole 11 is not formed, and the resonance frequency (oscillation frequency) is also lowered. An example of the result of simulation about the correlation between such rigidity and resonance frequency is shown in the following table.
(table)

As can be seen from this table, when the diameter of the diaphragm 10 is 38 μm, the resonance frequency is reduced by about 9.5 MHz by forming the through hole 11. Further, in a separately performed simulation, when the diameter dimension of the diaphragm 10 is 78 μm, the resonance frequency is about 10 MHz when the through hole 11 is formed and when the through hole 11 is not formed (52 MHz). It was low. Therefore, when trying to manufacture a disk resonator that resonates at a certain resonance frequency, the resonance frequency based on the fact that the through hole 11 is formed is greater when the through hole 11 is formed than when the through hole 11 is not formed. It can be said that it is necessary to reduce the diameter of the diaphragm 10 so that the resonance frequency is increased by the amount of decrease. In other words, the diaphragm 10 that oscillates at a certain resonance frequency has a smaller diameter when the through hole 11 is formed than when the through hole 11 is not formed. Thus, the fact that the resonance frequency changes in accordance with the diameter dimension of the diaphragm 10 is shown in, for example, the following document 1 (Bessel function of Equation (T1.3) and Equation (T1.4)).
Reference 1: "Series-Resonant VHF Micromechanical Resonator Reference Oscillators", IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL, 39, NO. 12, DECEMBER 2004, pp.2477-2491

  An example of a method for manufacturing the above-described disk vibrator by the MEMS method will be described with reference to FIGS. First, as shown in FIG. 6A, phosphorus ions are implanted into the base substrate 1 and the base substrate 1 is heated to diffuse phosphorus on the surface of the base substrate 1 to form the silicon film 2 described above. Form. Next, the silicon oxide film 3 and the silicon nitride film 4 are stacked on the base substrate 1 (silicon film 2) in this order from the lower side. Subsequently, a photoresist mask (not shown) patterned so that the formation region of the above-described recess 7 is opened is formed on the silicon nitride film 4, and the silicon nitride film 4 and the silicon oxide film are formed through this mask. 3 is dry-etched to expose the silicon film 2. It should be noted that in forming the photoresist mask, a resist solution is applied, exposed, and developed in practice, but is omitted here. The description of the resist film forming process described below is also omitted. The illustration of the recess 7 is omitted.

  Next, as shown in FIG. 6B, a first polysilicon film 41 made of polycrystalline silicon is formed on the silicon nitride film 4, and then phosphorus is diffused into the first polysilicon film 41. The first polysilicon film 41 is formed along the inner wall surface of the recess 7 described above, and contacts the silicon film 2 as shown in FIG. Then, a first resist film 51 patterned so as to correspond to the diaphragm 10 (conductive film 5), each electrode 20, the lead electrode 6, and the ground port 8 is formed on the first polysilicon film 41. 6C and 7, the first polysilicon film 41 is dry-etched through the first resist film 51. Thereafter, the first resist film 51 is removed.

  Subsequently, as shown in FIG. 8A, on the upper layer side of the first polysilicon film 41, for example, a first sacrificial film 61 made of silicon oxide and a second polysilicon film made of polycrystalline silicon ( Specifically, a film doped with phosphorus after forming a polycrystalline silicon film) and a second sacrificial film 62 made of, for example, silicon oxide are laminated in this order from the bottom. At this time, the first sacrificial film 61 and the second sacrificial film 62 are formed to have the same film thickness. Then, on the upper layer side of the second sacrificial film 62, a second resist film 52 patterned so as to correspond to the shape of the diaphragm 10 provided with the through hole 11, the support beam 31, and the opening 32 is formed. .

  Next, as shown in FIGS. 8B and 9, after the second sacrificial film 62 and the second polysilicon film 42 are dry-etched through the second resist film 52, the second resist film As shown in FIG. 8C, a third sacrificial film 63 made of silicon oxide is formed as a gap oxide film on the upper layer side of the second sacrificial film 62. The third sacrificial film 63 is formed so as to enter each of the through hole 11 and the opening 32. Next, as shown in FIG. 10A, a third resist film 53 is formed on the third sacrificial film 63, and the opening 32 of the support beam 31 is formed with respect to the third resist film 53. The patterning is performed so that the area corresponding to each electrode 20 is opened so as to be slightly larger than the opening 32 on the upper side. Thereafter, as shown in FIG. 10B, the third sacrificial film 63 on the lower side is dry-etched through the third resist film 53. Further, as shown in FIG. 10C, the first sacrificial film 61 and the second sacrificial film 62 exposed on the surface by this dry etching are dry-etched through the third resist film 53. By this etching, the first polysilicon film 41 is exposed in the bottom surface of the opening 32 and the electrode 20 formation region, and the region around the opening 32 on the upper side of the second polysilicon film 42 is exposed. . Thereafter, the third resist film 53 is removed.

  Then, as shown in FIG. 11A, a third polysilicon film 43 made of polycrystalline silicon is formed, and the third polysilicon film 43 is doped with phosphorus. The inner region of the above-described opening 32 is filled with the third polysilicon film 43. Thereafter, a fourth resist film 54 having openings other than the electrodes 20, the support pillars 33, and the beam portions 10a is formed, and the third polysilicon film 43 is dry-etched as shown in FIG. 11B. To do. Further, when the structure formed on the base substrate 1 is immersed together with the base substrate 1 in an etching solution such as a hydrofluoric acid solution while the fourth resist film 54 is left, the etching solution becomes a third polysilicon film. The third sacrificial film 63 is removed as shown in FIG. By this wet etching, as shown in FIGS. 3 and 4 described above, an amount corresponding to the film thickness of the third sacrificial film 63 is provided between the electrode 20 and the diaphragm 10 and between the beam portion 10a and the diaphragm 10. A gap region is formed between the two. Further, the support beam 31 is separated from the surrounding diaphragm 10.

  Thereafter, as shown in FIG. 12 (a), the fourth resist film 54 is removed and the structure is immersed in the etching solution described above. As shown in FIG. 12 (b), the sacrificial film 61, 62 is removed. In this way, the support beam 31 and the diaphragm 10 are lifted from the first polysilicon film 41, and the diaphragm 10 is supported by the support pillar 33.

  According to the above-described embodiment, in the contour vibration type disk vibrator in which the vibration plate 10 vibrates in the wine glass mode, the vibration vibration in the vibration plate 10 is a position (a position that does not inhibit the vibration of the vibration plate 10). A through hole 11 is formed, and a support portion 30 is provided so as to connect the inner wall surface of the through hole 11 and the base substrate 1 (conductive film 5). Therefore, a space for the support portion 30 is not necessary on the outer peripheral side of the diaphragm 10. Moreover, since the rigidity of the diaphragm 10 is lowered by the formation of the through hole 11 and the resonance frequency is lowered, if the diaphragm 10 is oscillated at the same resonance frequency as that in the case where the through hole 11 is not formed, the through hole 11 is penetrated. The diameter dimension of the diaphragm 10 can be reduced by an amount corresponding to the amount of decrease in the resonance frequency based on the formation of the hole 11. Therefore, the disk vibrator can be reduced in size.

Here, when the diaphragm in which the through-hole 11 is formed is compared with the diaphragm in which the through-hole 11 is not formed, if the diaphragm has the same diameter dimension, the vibration in which the through-hole 11 is formed. The resonance frequency of the plate is lower. Therefore, it can be said that when the disk vibrator having a low resonance frequency is manufactured, the diaphragm 10 can be prevented from being enlarged by forming the through hole 11 in the diaphragm.
Therefore, a small electronic component can be obtained by applying the disk vibrator described above to an electronic component (filter).

  Hereinafter, another example of the disk vibrator of the present invention will be described. FIG. 13 shows an example of an electric circuit of an electronic component (oscillator) in which the disk vibrator of the present invention described above is incorporated in an oscillation circuit. In this example, a Colpitts circuit including two capacitors C and C connected in series with each other and a transistor 101 is shown. The base terminal of the transistor 101 includes a disk resonator 100 of the present invention and a variable capacitor C1. A series circuit is connected. A power supply unit 102 is connected to a connection point between the base terminal and the disk vibrator 100, and an output port 103 for extracting an electric signal is connected to a collector terminal of the transistor 101. In FIG. 25, 104 is a resistor, and 105 is an inductance.

The support portions 30 are arranged at four locations in the above-described example, but may be arranged at two locations so as to face each other or at only one location. FIG. 14 shows an example in which the support portion 30 is provided at only one place.
Further, the support beams 31 are configured to be supported on the outer peripheral side of the diaphragm 10, but may be configured to be supported on the inner peripheral side of the diaphragm 10 as illustrated in FIG. 15. Therefore, the support column 33 is disposed on the outer peripheral side of the support beam 31.

Furthermore, although the support beam 31 is disposed so as to extend along the radial direction of the diaphragm 10, the support beam 31 may be disposed so as to extend in a circumferential direction or a tangential direction of the diaphragm 10. That is, as shown in FIG. 16, the support beam 31 may be formed so as to extend from one side in the circumferential direction of the diaphragm 10 in the through hole 11 toward the other side. Also in this case, the support beam 31 is configured to extend horizontally from the inner wall surface of the through hole 11.
Further, the support beam 31 may be formed in a curved shape in the through hole 11 instead of being formed in a straight shape along the radial direction of the diaphragm 10.

Further, the structure in which the silicon film 2, the silicon oxide film 3, and the silicon nitride film 4 are laminated in this order from the lower side on the base substrate 1 has been described. For example, as shown in FIG. Instead of the film 3 and the silicon nitride film 4, a PE-NSG film (silicon oxide film) 200 and an LP-SiN film (silicon nitride film) 201 may be formed in this order from the lower side.
In addition, in the example described above, the conductive path 23 such as a wire is used to input a signal to the first electrodes 21 and 21, but the first polycrystal on the lower side of the first electrodes 21 and 21 is used. A conductive film (not shown) extending in the horizontal direction from the silicon film 41 may be formed, and a signal may be input through the conductive film.
In the above example, “the support beam 31 is formed along the radial direction of the diaphragm 10” means that, in addition to being formed from the center position of the diaphragm 10 toward the outer peripheral side, for example, a disk The case where the support beam 31 is slightly deviated from the radial direction due to manufacturing variation when manufacturing the vibrator is also included.
Further, although the circular diaphragm 10 has been described, the diaphragm 10 may be an ellipse, a quadrangle, a triangle, or the like. In such a case, the through-hole 11 is formed in a direction extending from the center side of the diaphragm 10 to the outer peripheral side at a position that becomes a node of the diaphragm 10.

DESCRIPTION OF SYMBOLS 1 Base substrate 10 Diaphragm 11 Through-hole 20-22 Electrode 30 Support part 31 Support beam 32 Opening part 33 Support pillar 41-43 Polysilicon film 51-54 Resist film 61-63 Sacrificial film

Claims (5)

In a contour vibration type vibrator having a diaphragm that is supported on a base substrate via a support portion and to which a bias voltage is applied,
In order to vibrate the diaphragm in a wine glass mode, a pair of input electrodes arranged to face each other through the diaphragm in plan view;
A pair of output electrodes arranged to face each other through the diaphragm in plan view in order to extract an output signal based on the vibration of the diaphragm;
A through hole that is formed at a position that becomes a vibration node in the diaphragm, and penetrates the diaphragm in the thickness direction,
The vibrator is characterized in that the support portion is provided so as to connect between an inner wall surface of the through hole and the base substrate.   Assuming that a straight line passing through the center when the pair of input electrodes is connected and the vibrator is viewed in a plane is L, the angle θ between the through-hole and the straight line L when viewed in a plane is 45 °. 2. The vibrator according to claim 1, wherein the vibrator is formed so as to extend from the center side of the diaphragm toward the outer peripheral side at a certain position.   3. The vibrator according to claim 1, wherein the support portion is connected to an inner wall surface on a central portion side or an inner wall surface on an outer peripheral portion side of the diaphragm in the through hole.   The vibrator according to any one of claims 1 to 3, wherein the support portions are arranged at four positions so as to be spaced apart from each other at equal intervals in a circumferential direction of the diaphragm.   An electronic component comprising the vibrator according to claim 1.

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