JP2013098484A - Susceptor and semiconductor manufacturing apparatus using the same - Google Patents

Susceptor and semiconductor manufacturing apparatus using the same Download PDF

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JP2013098484A
JP2013098484A JP2011242452A JP2011242452A JP2013098484A JP 2013098484 A JP2013098484 A JP 2013098484A JP 2011242452 A JP2011242452 A JP 2011242452A JP 2011242452 A JP2011242452 A JP 2011242452A JP 2013098484 A JP2013098484 A JP 2013098484A
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substrate
susceptor
holding component
substrate holding
semiconductor manufacturing
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Satoshi Nakayama
智 中山
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Hitachi Cable Ltd
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Hitachi Cable Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a susceptor which achieves the cost reduction for replacing substrate holding components and improves the throughput of semiconductor manufacturing, and to provide a semiconductor manufacturing apparatus using the susceptor.SOLUTION: In a susceptor used in a face down type semiconductor manufacturing apparatus, which places a surface of a substrate so as to face a reaction gas passage located below the substrate to form a semiconductor film on the surface of the substrate through vapor phase growth, a claw component supporting the substrate is detachably provided.

Description

本発明は、フェースダウン型の半導体製造装置に用いられるサセプタ及びこれを用いた半導体製造装置に関するものである。   The present invention relates to a susceptor used in a face-down type semiconductor manufacturing apparatus and a semiconductor manufacturing apparatus using the susceptor.

基板の表面をその下方の反応ガス流路に臨ませて基板の表面に半導体膜を気相成長させるフェースダウン型の半導体製造装置は、気相成長中のデポ(生成物が堆積したもの)が基板の表面に付き難く、半導体の製造に際して良く採用されている構造である(例えば、特許文献1参照)。   A face-down type semiconductor manufacturing apparatus in which a semiconductor film is vapor-grown on the surface of the substrate with the surface of the substrate facing the reaction gas flow path underneath is a deposit (product deposited) during vapor-phase growth. It is a structure that is not easily attached to the surface of the substrate and is often used in the manufacture of semiconductors (see, for example, Patent Document 1).

この半導体製造装置では、基板の表面を反応ガス中に曝すために、基板はサセプタ本体に載置された基板保持部品によって保持される。また、図3に示すように、気相成長の際にサセプタ本体31が公転すると、基板保持部品32のギヤ構造33が固定された自転発生部品34のギヤ構造35に噛み合い、基板保持部品32がサセプタ本体31とは別に自転する自公転式のサセプタ30が用いられることもある(例えば、特許文献2参照)。   In this semiconductor manufacturing apparatus, the substrate is held by a substrate holding component placed on the susceptor body in order to expose the surface of the substrate in the reaction gas. Also, as shown in FIG. 3, when the susceptor body 31 revolves during vapor phase growth, the gear structure 33 of the substrate holding component 32 is engaged with the gear structure 35 of the rotation generating component 34 to which the substrate holding component 32 is fixed. In addition to the susceptor body 31, a self-revolving susceptor 30 that rotates may be used (see, for example, Patent Document 2).

特開2006−344758号公報JP 2006-344758 A 特許第4537566号公報Japanese Patent No. 4533766

図4に示すように、基板保持部品32は、半導体膜36の気相成長領域を稼ぐために、基板37の外周を細いツメ部38のみによって支えるが、基板保持部品32が窒化硼素(BN)のような機械的に加工しやすいが脆い材質からなる場合には、細いツメ部38が欠けて基板37を載置することができなくなり、ツメ部38が欠ける毎に基板保持部品32を交換するためのコストが掛かる。   As shown in FIG. 4, the substrate holding component 32 supports the outer periphery of the substrate 37 only by a thin claw portion 38 in order to gain a vapor phase growth region of the semiconductor film 36, but the substrate holding component 32 is boron nitride (BN). In the case where it is made of a fragile material that is easy to machine mechanically, the thin claw portion 38 is chipped and the substrate 37 cannot be placed, and the substrate holding component 32 is replaced every time the claw portion 38 is cut. Cost.

特に、図3で示した自公転式のサセプタ30を用いる場合には、基板保持部品32が自転のための複雑なギヤ構造33を有しているため、基板保持部品32自体のコストが高く、基板保持部品32の交換に掛かるコストが増大してしまう。   In particular, when the self-revolving susceptor 30 shown in FIG. 3 is used, since the substrate holding component 32 has a complicated gear structure 33 for rotation, the cost of the substrate holding component 32 itself is high. The cost required for replacing the substrate holding component 32 increases.

また、基板保持部品32の底部39は、基板37の表面と共に反応ガス中に曝されて生成物が付着するため、この生成物がある程度堆積すると、この生成物を蒸発させて取り除くためのベーク処理を行う必要があり、それが連続的な半導体製造を妨げ、スループットを落としている。   Further, the bottom 39 of the substrate holding component 32 is exposed to the reaction gas together with the surface of the substrate 37, and the product adheres. Therefore, when this product is deposited to some extent, the baking process is performed to evaporate and remove the product. That hinders continuous semiconductor manufacturing and reduces throughput.

そこで、本発明の目的は、基板保持部品の交換に掛かるコストの削減を実現できると共に半導体製造のスループットを向上させることができるサセプタ及びこれを用いた半導体製造装置を提供することにある。   SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a susceptor capable of realizing a reduction in cost for replacing a substrate holding component and improving the throughput of semiconductor manufacturing, and a semiconductor manufacturing apparatus using the susceptor.

この目的を達成するために創案された本発明は、基板の表面をその下方の反応ガス流路に臨ませて前記基板の表面に半導体膜を気相成長させるフェースダウン型の半導体製造装置に用いられるサセプタにおいて、前記基板を支えるツメ部品が着脱自在に設けられるサセプタである。   The present invention devised to achieve this object is used in a face-down type semiconductor manufacturing apparatus in which a semiconductor film is vapor-grown on the surface of the substrate with the surface of the substrate facing the reaction gas flow path below the substrate surface. In this susceptor, a claw component that supports the substrate is detachably provided.

また本発明は、基板の表面をその下方の反応ガス流路に臨ませて前記基板の表面に半導体膜を気相成長させるフェースダウン型の半導体製造装置に用いられるサセプタにおいて、サセプタ本体と前記サセプタ本体に載置され前記基板を保持するための基板保持部品とを備え、前記基板保持部品は、基板保持部品本体と前記基板保持部品本体に対して連結部材で着脱自在に取り付けられ前記基板を支えるツメ部品とを有するサセプタである。   The present invention also provides a susceptor body and the susceptor used in a face-down type semiconductor manufacturing apparatus in which a semiconductor film is vapor-grown on the surface of the substrate with the surface of the substrate facing the reaction gas channel below the substrate. A substrate holding component mounted on the main body for holding the substrate, and the substrate holding component is detachably attached to the substrate holding component main body and the substrate holding component main body by a connecting member to support the substrate. A susceptor having claw parts.

前記サセプタ本体が公転すると共に前記基板保持部品がサセプタ本体とは別に自転する自公転式であり、前記基板保持部品を自転させるための自転機構が前記基板保持部品本体に設けられると良い。   It is preferable that the susceptor body revolves and the substrate holding component rotates independently of the susceptor body, and a rotation mechanism for rotating the substrate holding component is provided in the substrate holding component body.

また本発明は、基板の表面をその下方の反応ガス流路に臨ませて前記基板の表面に半導体膜を気相成長させるフェースダウン型の半導体製造装置において、前記基板を支えるツメ部品が着脱自在に設けられたサセプタを備える半導体製造装置である。   Further, the present invention provides a face-down type semiconductor manufacturing apparatus in which a semiconductor film is vapor-grown on the surface of the substrate with the surface of the substrate facing the reaction gas flow path below the substrate, and the claw parts that support the substrate are detachable. It is a semiconductor manufacturing apparatus provided with the susceptor provided in.

また本発明は、基板の表面をその下方の反応ガス流路に臨ませて前記基板の表面に半導体膜を気相成長させるフェースダウン型の半導体製造装置において、サセプタ本体と前記サセプタ本体に載置され前記基板を保持するための基板保持部品とを有するサセプタを備え、前記基板保持部品は、基板保持部品本体と前記基板保持部品本体に対して連結部材で着脱自在に取り付けられ前記基板を支えるツメ部品とを有する半導体製造装置である。   The present invention also provides a susceptor body and a susceptor body mounted on a susceptor body in a face-down type semiconductor manufacturing apparatus in which a semiconductor film is vapor-grown on the surface of the substrate with the surface of the substrate facing a reaction gas channel below the substrate. A susceptor having a substrate holding component for holding the substrate, the substrate holding component being detachably attached to the substrate holding component main body and the substrate holding component main body by a connecting member and supporting the substrate. A semiconductor manufacturing apparatus having a component.

前記サセプタ本体が公転すると共に前記基板保持部品がサセプタ本体とは別に自転する自公転式であり、前記基板保持部品を自転させるための自転機構が前記基板保持部品本体に設けられると良い。   It is preferable that the susceptor body revolves and the substrate holding component rotates independently of the susceptor body, and a rotation mechanism for rotating the substrate holding component is provided in the substrate holding component body.

本発明によれば、基板保持部品の交換に掛かるコストの削減を実現できると共に半導体製造のスループットを向上させることができるサセプタ及びこれを用いた半導体製造装置を提供することができる。   According to the present invention, it is possible to provide a susceptor and a semiconductor manufacturing apparatus using the susceptor that can realize a reduction in cost required for replacing a substrate holding component and improve the throughput of semiconductor manufacturing.

本発明の実施の形態に係るサセプタを示す断面図である。It is sectional drawing which shows the susceptor which concerns on embodiment of this invention. 本発明の実施の形態に係る半導体製造装置を示す断面図である。It is sectional drawing which shows the semiconductor manufacturing apparatus which concerns on embodiment of this invention. 自公転式のサセプタを示す上面図である。It is a top view which shows a self-revolving susceptor. 図3のA−A線断面図である。FIG. 4 is a sectional view taken along line AA in FIG. 3.

以下、本発明の好適な実施の形態を添付図面にしたがって説明する。   Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

図1,2に示すように、本実施の形態に係るサセプタ10は、基板11の表面をその下方の反応ガス流路12に臨ませて基板11の表面に半導体膜13を気相成長させるフェースダウン型の半導体製造装置20に用いられるものであり、基板11を支えるツメ部品14が着脱自在に設けられることを特徴とする。   As shown in FIGS. 1 and 2, the susceptor 10 according to the present embodiment has a face for vapor-phase-growing a semiconductor film 13 on the surface of the substrate 11 with the surface of the substrate 11 facing the reaction gas channel 12 below the substrate 11. It is used in the down type semiconductor manufacturing apparatus 20 and is characterized in that a claw component 14 that supports the substrate 11 is detachably provided.

より具体的には、サセプタ10は、円盤状のサセプタ本体15とサセプタ本体15に載置され基板11を保持するための基板保持部品16とを備える。サセプタ本体15は、円周状に配置され基板保持部品16を載置するための穴17を有する。基板保持部品16は、基板保持部品本体18と基板保持部品本体18に対して連結部材19で着脱自在に取り付けられ基板11を支えるツメ部品14とを有する。連結部材19は例えばネジからなり、ツメ部品14の底部に設けられたネジ穴に差し込むことにより、基板保持部品本体18とツメ部品14とを簡便に接続できるような構造となっている。基板保持部品本体18は、サセプタ本体15の穴17の外周部分にボールベアリング21を介して載置される。基板保持部品本体18とツメ部品14とで形成される段差部22には、基板11の面内に亘って均一に熱を伝達するための均熱板23が設けられる。   More specifically, the susceptor 10 includes a disc-shaped susceptor body 15 and a substrate holding component 16 that is placed on the susceptor body 15 and holds the substrate 11. The susceptor body 15 has a hole 17 for placing the substrate holding component 16 arranged circumferentially. The substrate holding component 16 includes a substrate holding component main body 18 and a claw component 14 that is detachably attached to the substrate holding component main body 18 by a connecting member 19 and supports the substrate 11. The connecting member 19 is made of, for example, a screw, and has a structure that allows the board holding component main body 18 and the claw component 14 to be easily connected by being inserted into a screw hole provided at the bottom of the claw component 14. The substrate holding component main body 18 is placed on the outer peripheral portion of the hole 17 of the susceptor main body 15 via a ball bearing 21. A step portion 22 formed by the substrate holding component body 18 and the claw component 14 is provided with a heat equalizing plate 23 for uniformly transferring heat over the surface of the substrate 11.

図3で説明したサセプタ30と同じように、サセプタ10もサセプタ本体15が公転すると共に基板保持部品16がサセプタ本体15とは別に自転する自公転式であり、基板保持部品16を自転させるための自転機構(例えば、ギヤ構造)24が基板保持部品本体18に設けられる。   Similar to the susceptor 30 described with reference to FIG. 3, the susceptor 10 is a self-revolving type in which the susceptor body 15 revolves and the substrate holding component 16 rotates independently of the susceptor body 15. A rotation mechanism (for example, a gear structure) 24 is provided in the substrate holding component main body 18.

これら基板保持部品本体18、ツメ部品14、及び連結部材19を構成する材料としては、炭素(C)、炭化珪素(SiC)、窒化硼素(BN)、熱分解窒化硼素(PBN)、石英(SiO2)、タングステン(W)、モリブデン(Mo)などが挙げられる。 Examples of materials constituting the substrate holding component main body 18, the claw component 14, and the connecting member 19 include carbon (C), silicon carbide (SiC), boron nitride (BN), pyrolytic boron nitride (PBN), quartz (SiO 2). 2 ), tungsten (W), molybdenum (Mo) and the like.

基板保持部品本体18、ツメ部品14、及び連結部材19は、それぞれ同種材料で構成されても良く、異種材料で構成されても良い。しかしながら、自転機構24が設けられることやボールベアリング21が接することなどを考慮すると、基板保持部品本体18は機械的な駆動に強い材料(金属など)からなることが好ましい。また、基板11と共に反応ガス中に曝されて生成物が付着することを考慮すると、ツメ部品14は反応ガスに応じた生成物が堆積しにくい材料からなることが好ましい。このように基板保持部品本体18、ツメ部品14、及び連結部材19を構成する材料を適宜選択することで、半導体製造の歩留まりを向上させることが可能である。   The substrate holding component body 18, the claw component 14, and the connecting member 19 may be made of the same material or different materials. However, in consideration of the provision of the rotation mechanism 24 and the contact of the ball bearing 21, the substrate holding component body 18 is preferably made of a material (such as metal) that is resistant to mechanical driving. Further, considering that the product adheres to the substrate 11 when exposed to the reaction gas, the claw component 14 is preferably made of a material in which the product corresponding to the reaction gas is difficult to deposit. Thus, by appropriately selecting the materials constituting the substrate holding component main body 18, the claw component 14, and the connecting member 19, it is possible to improve the yield of semiconductor manufacturing.

以上説明したサセプタ10によれば、基板保持部品本体18とツメ部品14とが別体であるため、ツメ部品14が欠けた場合でも基板保持部品16の全体を交換する必要はなく、自転機構24を有する高価な基板保持部品本体18を残して低価なツメ部品14だけを交換すれば良い。そのため、基板保持部品の交換に掛かるコストの削減を実現できる。   According to the susceptor 10 described above, since the substrate holding component main body 18 and the claw component 14 are separate, it is not necessary to replace the entire substrate holding component 16 even when the claw component 14 is missing, and the rotation mechanism 24. It is only necessary to replace the low-priced claw component 14 while leaving the expensive substrate holding component main body 18 having the above. For this reason, it is possible to reduce the cost required for replacing the substrate holding component.

また、半導体製造によって基板11の表面と共に反応ガス中に曝されるツメ部品14の底部に生成物が堆積し、ベーク処理が必要になった場合にも、ツメ部品14を交換すれば良い。そのため、ベーク処理に掛かる時間を節約し、半導体製造のスループットを向上させることができる。   Further, the claw component 14 may be replaced when a product is deposited on the bottom of the claw component 14 exposed to the reaction gas together with the surface of the substrate 11 due to semiconductor manufacturing and baking is necessary. Therefore, it is possible to save the time required for the baking process and improve the throughput of semiconductor manufacturing.

このサセプタ10を用いたフェースダウン型の半導体製造装置20は、サセプタ10の他に、サセプタ10をその中心軸廻りに回転させる回転機構25と、サセプタ10の上側に設けられたヒータ26と、サセプタ10の下側に反応ガス流路12を形成する反応管27と、反応管27を支持する反応管ステージ28と、これらを収容する反応炉29とを備える。   In addition to the susceptor 10, the face-down type semiconductor manufacturing apparatus 20 using the susceptor 10 includes a rotation mechanism 25 that rotates the susceptor 10 around its central axis, a heater 26 provided on the susceptor 10, and a susceptor. 10 includes a reaction tube 27 that forms a reaction gas flow path 12 below, a reaction tube stage 28 that supports the reaction tube 27, and a reaction furnace 29 that accommodates these.

サセプタ10は、反応管27の上部壁41に形成されたサセプタ用の開口42に、基板11の表面が反応ガス流路12に臨むように設けられる。反応管27は、反応炉29内を水平方向に直線的に横断している。反応管27の一端(図1では左側)には、反応ガスを供給するための導入口43が形成され、他端(図1では右側)には、反応ガスを排出する排出口44が形成される。   The susceptor 10 is provided in the susceptor opening 42 formed in the upper wall 41 of the reaction tube 27 so that the surface of the substrate 11 faces the reaction gas channel 12. The reaction tube 27 linearly crosses the reaction furnace 29 in the horizontal direction. An inlet 43 for supplying a reaction gas is formed at one end (left side in FIG. 1) of the reaction tube 27, and a discharge port 44 for discharging the reaction gas is formed at the other end (right side in FIG. 1). The

この半導体製造装置20では、サセプタ10に同心円上に複数の基板11をセットし、回転機構25でサセプタ10を公転させたところに、原料供給系より反応管27を介して基板11の表面に反応ガスを供給し、反応ガスをヒータ26で熱分解し、複数の基板11の表面に半導体膜13を気相成長させる。   In this semiconductor manufacturing apparatus 20, a plurality of substrates 11 are set concentrically on the susceptor 10, and the susceptor 10 is revolved by the rotation mechanism 25, and then reacts with the surface of the substrate 11 from the raw material supply system via the reaction tube 27. A gas is supplied, the reaction gas is thermally decomposed by the heater 26, and the semiconductor film 13 is vapor-grown on the surfaces of the plurality of substrates 11.

以上説明した半導体製造装置20によれば、基板保持部品の交換に掛かるコストの削減を実現できると共に半導体製造のスループットを向上させることができるサセプタ10を用いているため、低コストで半導体製造を行うことができる。   According to the semiconductor manufacturing apparatus 20 described above, since the susceptor 10 that can reduce the cost for replacing the substrate holding component and can improve the throughput of the semiconductor manufacturing is used, the semiconductor manufacturing is performed at a low cost. be able to.

10 サセプタ
11 基板
12 反応ガス流路
13 半導体膜
14 ツメ部品
15 サセプタ本体
16 基板保持部品
17 穴
18 基板保持部品本体
19 連結部材
20 半導体製造装置
21 ボールベアリング
22 段差部
23 均熱板
24 自転機構
25 回転機構
26 ヒータ
27 反応管
28 反応管ステージ
29 反応炉
41 上部壁
42 開口
43 導入口
44 排出口
DESCRIPTION OF SYMBOLS 10 Susceptor 11 Substrate 12 Reaction gas flow path 13 Semiconductor film 14 Claw component 15 Susceptor main body 16 Substrate holding component 17 Hole 18 Substrate holding component main body 19 Connecting member 20 Semiconductor manufacturing device 21 Ball bearing 22 Stepped portion 23 Soaking plate 24 Rotating mechanism 25 Rotating mechanism 26 Heater 27 Reaction tube 28 Reaction tube stage 29 Reaction furnace 41 Upper wall 42 Opening 43 Introduction port 44 Discharge port

Claims (6)

基板の表面をその下方の反応ガス流路に臨ませて前記基板の表面に半導体膜を気相成長させるフェースダウン型の半導体製造装置に用いられるサセプタにおいて、
前記基板を支えるツメ部品が着脱自在に設けられることを特徴とするサセプタ。
In a susceptor used in a face-down type semiconductor manufacturing apparatus in which a semiconductor film is vapor-phase grown on a surface of the substrate with the surface of the substrate facing a reaction gas channel below the substrate,
A susceptor, wherein a claw part for supporting the substrate is detachably provided.
基板の表面をその下方の反応ガス流路に臨ませて前記基板の表面に半導体膜を気相成長させるフェースダウン型の半導体製造装置に用いられるサセプタにおいて、
サセプタ本体と前記サセプタ本体に載置され前記基板を保持するための基板保持部品とを備え、
前記基板保持部品は、基板保持部品本体と前記基板保持部品本体に対して連結部材で着脱自在に取り付けられ前記基板を支えるツメ部品とを有することを特徴とするサセプタ。
In a susceptor used in a face-down type semiconductor manufacturing apparatus in which a semiconductor film is vapor-phase grown on a surface of the substrate with the surface of the substrate facing a reaction gas channel below the substrate,
A susceptor main body and a substrate holding component mounted on the susceptor main body for holding the substrate;
The substrate holding component includes a substrate holding component main body and a claw component that is detachably attached to the substrate holding component main body by a connecting member and supports the substrate.
前記サセプタ本体が公転すると共に前記基板保持部品がサセプタ本体とは別に自転する自公転式であり、前記基板保持部品を自転させるための自転機構が前記基板保持部品本体に設けられる請求項2に記載のサセプタ。   3. The substrate holding component body according to claim 2, wherein the susceptor body revolves and the substrate holding component is a self-revolving type that rotates independently of the susceptor body, and a rotation mechanism for rotating the substrate holding component is provided in the substrate holding component body. Susceptor. 基板の表面をその下方の反応ガス流路に臨ませて前記基板の表面に半導体膜を気相成長させるフェースダウン型の半導体製造装置において、
前記基板を支えるツメ部品が着脱自在に設けられたサセプタを備えることを特徴とする半導体製造装置。
In a face-down type semiconductor manufacturing apparatus in which a semiconductor film is vapor-phase grown on a surface of the substrate with the surface of the substrate facing a reaction gas flow path below the substrate,
A semiconductor manufacturing apparatus comprising: a susceptor on which a claw component for supporting the substrate is detachably provided.
基板の表面をその下方の反応ガス流路に臨ませて前記基板の表面に半導体膜を気相成長させるフェースダウン型の半導体製造装置において、
サセプタ本体と前記サセプタ本体に載置され前記基板を保持するための基板保持部品とを有するサセプタを備え、
前記基板保持部品は、基板保持部品本体と前記基板保持部品本体に対して連結部材で着脱自在に取り付けられ前記基板を支えるツメ部品とを有することを特徴とする半導体製造装置。
In a face-down type semiconductor manufacturing apparatus in which a semiconductor film is vapor-phase grown on a surface of the substrate with the surface of the substrate facing a reaction gas flow path below the substrate,
A susceptor having a susceptor body and a substrate holding component mounted on the susceptor body to hold the substrate;
2. The semiconductor manufacturing apparatus according to claim 1, wherein the substrate holding component includes a substrate holding component main body and a claw component that is detachably attached to the substrate holding component main body by a connecting member and supports the substrate.
前記サセプタ本体が公転すると共に前記基板保持部品がサセプタ本体とは別に自転する自公転式であり、前記基板保持部品を自転させるための自転機構が前記基板保持部品本体に設けられる請求項5に記載の半導体製造装置。   6. The substrate holding component main body according to claim 5, wherein the substrate holding component is a self-revolving type in which the susceptor main body revolves and the substrate holding component rotates independently of the susceptor main body, and a rotation mechanism for rotating the substrate holding component is provided in the substrate holding component main body. Semiconductor manufacturing equipment.
JP2011242452A 2011-11-04 2011-11-04 Susceptor and semiconductor manufacturing apparatus using the same Pending JP2013098484A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI757781B (en) * 2020-07-06 2022-03-11 大陸商蘇州雨竹機電有限公司 Chemical vapor deposition reaction chamber and substrate carrier device thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI757781B (en) * 2020-07-06 2022-03-11 大陸商蘇州雨竹機電有限公司 Chemical vapor deposition reaction chamber and substrate carrier device thereof

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