JP2013084772A - Substrate placement structure and substrate processing apparatus - Google Patents

Substrate placement structure and substrate processing apparatus Download PDF

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JP2013084772A
JP2013084772A JP2011223742A JP2011223742A JP2013084772A JP 2013084772 A JP2013084772 A JP 2013084772A JP 2011223742 A JP2011223742 A JP 2011223742A JP 2011223742 A JP2011223742 A JP 2011223742A JP 2013084772 A JP2013084772 A JP 2013084772A
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substrate
mounting
placement
tray
mounting structure
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Kazuto Yoshida
和人 吉田
Tadashi Shimazu
正 嶋津
Toshihiko Nishimori
年彦 西森
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Mitsubishi Heavy Industries Ltd
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PROBLEM TO BE SOLVED: To provide a substrate placement structure and a substrate processing apparatus which improve the positioning accuracy of substrates and reduce influences on processes.SOLUTION: A substrate placement structure comprises: a substrate tray including multiple through holes in which substrates are respectively housed and holding parts which are provided at three positions on an inner wall of each through hole protruding therefrom, the holding parts holding the substrate on upper surfaces; and a placement plate 10 which includes multiple placement bases 11 provided so as to correspond to the through holes and protrude, and cut-out parts 13 which are formed at three positions in an outer peripheral portion of each placement base 11 so as to correspond to the holding parts and house the holding parts. When the substrate tray is placed on the placement plate 10, the placement bases 11 are respectively disposed inside the through holes and the substrates are placed on the upper surfaces of the placement bases 11. In the substrate placement structure, an outer diameter of each placement base 11 is formed so as to be larger than an outer diameter of the substrate, and a guide 12, which guides an outer edge of the substrate, is provided at the enlarged outer peripheral portion of each placement base 11.

Description

本発明は、基板トレイを用いた基板の載置構造及び基板処理装置に関する。   The present invention relates to a substrate mounting structure using a substrate tray and a substrate processing apparatus.

小径の基板を基板トレイの複数の収容孔に各々収容し、その状態で、基板トレイをプラズマ処理装置内の基板サセプタ上に搬送し、基板を基板サセプタの基板載置部に静電吸着させて、所望のプロセスを行うことが知られている(特許文献1)。   A small-diameter substrate is accommodated in each of the plurality of accommodation holes of the substrate tray, and in that state, the substrate tray is transported onto the substrate susceptor in the plasma processing apparatus, and the substrate is electrostatically adsorbed on the substrate mounting portion of the substrate susceptor. It is known to perform a desired process (Patent Document 1).

特許第4361045号公報Japanese Patent No. 4361405

特許文献1等に開示された基板の載置構造においては、基板トレイを基板サセプタ上に搬送する際、基板の機械的位置決めのために、基板トレイ外周部と基板サセプタとのガイド(例えば、特許文献1の図17、18A、18B等参照)や基板トレイの収容孔内径と基板サセプタの基板載置部外径とのガイド(例えば、特許文献1の図5A、図5B等参照)、基板外径と基板トレイの収容孔内径とのガイド等のように、複数のガイド機構を設けており、これらを用いて、基板トレイと基板サセプタとの機械的位置決めを行うと共に、基板と基板載置部との機械的位置決めを行っている。   In the substrate mounting structure disclosed in Patent Document 1 and the like, when the substrate tray is transported onto the substrate susceptor, a guide (for example, a patent) between the substrate tray outer peripheral portion and the substrate susceptor is provided for mechanical positioning of the substrate. 17 (refer to FIGS. 17, 18A, 18B, etc. of Document 1), a guide (for example, see FIGS. 5A, 5B, etc. of Patent Document 1) between the inner diameter of the accommodation hole of the substrate tray and the outer diameter of the substrate mounting portion of the substrate susceptor, A plurality of guide mechanisms such as a guide for the diameter and the inner diameter of the accommodation hole of the substrate tray are provided, and using these, the substrate tray and the substrate susceptor are mechanically positioned, and the substrate and the substrate mounting portion And mechanical positioning.

上述したガイド機構は、各ガイド機構に機械的な隙間(例えば、特許文献1の図5B中のδ1、δ3等参照)が必要であるため、基板自体の位置決め精度の向上に限界があった。又、基板載置部外径を基板外径より小さくしており(例えば、特許文献1の図5A、図5B等参照)、そのため、基板裏面の外周部が基板載置部と接触しておらず、成膜等のプロセスにおいて温度等の影響を与えてしまい、最悪の場合、基板の反り変形をもたらすおそれがあった。   The guide mechanisms described above require a mechanical gap (for example, see δ1, δ3, etc. in FIG. 5B of Patent Document 1) in each guide mechanism, and thus there is a limit in improving the positioning accuracy of the substrate itself. Further, the outer diameter of the substrate mounting portion is made smaller than the outer diameter of the substrate (see, for example, FIG. 5A and FIG. 5B of Patent Document 1), so that the outer peripheral portion of the back surface of the substrate is not in contact with the substrate mounting portion. In the worst case, the process is affected by temperature or the like, and in the worst case, the substrate may be warped and deformed.

本発明は上記課題に鑑みなされたもので、基板の位置決め精度が向上すると共に、プロセスへの影響が低減する基板の載置構造及び基板処理装置を提供することを目的とする。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate mounting structure and a substrate processing apparatus that improve the positioning accuracy of the substrate and reduce the influence on the process.

上記課題を解決する第1の発明に係る基板の載置構造は、
基板を内側に収容する複数の貫通孔と、前記貫通孔の内壁の少なくとも3箇所に突設され、前記基板を上面に保持する保持部とを備える基板トレイと、
前記貫通孔に対応して突設された複数の載置台と、前記保持部に対応して、前記載置台の外周部分の少なくとも3箇所に形成され、前記保持部を収容する切欠部とを備える載置部とを有し、
前記基板トレイを前記載置部上に載置すると、前記貫通孔の内側に前記載置台が配置されて、前記基板が前記載置台の上面に各々載置される基板の載置構造において、
前記載置台の外径を前記基板の外径より大きくすると共に、大きくした前記載置台の外周部分に前記基板の外縁を案内するガイドを設けたことを特徴とする。
The substrate mounting structure according to the first invention for solving the above-mentioned problems is
A substrate tray provided with a plurality of through-holes that accommodate the substrate inside, and holding portions that protrude from at least three locations on the inner wall of the through-hole and hold the substrate on the upper surface;
A plurality of mounting tables projecting corresponding to the through-holes, and corresponding notches formed in at least three of the outer peripheral portions of the mounting table corresponding to the holding units. A mounting portion;
When the substrate tray is placed on the placement unit, the placement table is disposed inside the through hole, and the substrate is placed on the top surface of the placement table.
The outer diameter of the mounting table is made larger than the outer diameter of the substrate, and a guide for guiding the outer edge of the substrate is provided on the outer peripheral portion of the mounting table.

上記課題を解決する第2の発明に係る基板の載置構造は、
上記第1の発明に記載の基板の載置構造において、
前記ガイドの内周側を、前記基板を載置する前記載置台の上面から外周側に向かって傾斜させたことを特徴とする。
The substrate mounting structure according to the second invention for solving the above-mentioned problems is as follows.
In the substrate mounting structure according to the first invention,
The inner peripheral side of the guide is inclined toward the outer peripheral side from the upper surface of the mounting table on which the substrate is mounted.

上記課題を解決する第3の発明に係る基板の載置構造は、
上記第1又は第2の発明に記載の基板の載置構造において、
前記ガイドを、前記切欠部を除く、前記載置台の外周部分の全周に設けたことを特徴とする。
A substrate mounting structure according to a third invention for solving the above-described problems is as follows.
In the substrate mounting structure according to the first or second invention,
The guide is provided on the entire circumference of the outer peripheral portion of the mounting table excluding the notch.

上記課題を解決する第4の発明に係る基板の載置構造は、
上記第1又は第2の発明に記載の基板の載置構造において、
前記ガイドを、前記切欠部を除く、前記載置台の外周部分の少なくとも3箇所に設けたことを特徴とする。
A substrate mounting structure according to a fourth invention for solving the above-described problems is as follows.
In the substrate mounting structure according to the first or second invention,
The guide is provided in at least three places on the outer peripheral portion of the mounting table excluding the notch.

上記課題を解決する第5の発明に係る基板処理装置は、
上記第1〜第4のいずれか1つの発明に記載の基板の載置構造を備え、
前記載置台を介して、前記複数の基板の温度制御を行うと共に、前記複数の基板に所望の処理を行うことを特徴とする。
The substrate processing apparatus which concerns on 5th invention which solves the said subject is,
The substrate mounting structure according to any one of the first to fourth inventions,
The temperature of the plurality of substrates is controlled via the mounting table, and a desired process is performed on the plurality of substrates.

本発明によれば、複数の基板を一括搬送する基板トレイを用いて、載置部の載置台に基板を載置する際、載置台の外径を基板の外径より大きくすると共に、大きくした載置台の外周部分に基板の外縁を案内するガイドを設けたので、基板トレイの位置決め精度の許容値を大きくする一方、基板の載置台への位置決め精度をより高精度とする独自の搬送を実現できる。その結果、基板トレイを搬送する搬送ロボットの動作精度の仕様を緩和でき、低コスト化を図ることができる。又、基板を載置する載置部の載置台が基板より大きいので、基板の裏面のほぼ全面を載置台表面に接触させることができ、基板のほぼ全面の温度制御が可能となるので、基板温度に起因するプロセスへの影響を低減でき、基板処理装置の性能向上を図ることができる。例えば、基板処理装置がプラズマCVD装置であれば、成膜時の膜質の向上を図ることができる。   According to the present invention, when mounting a substrate on the mounting table of the mounting unit using a substrate tray that collectively conveys a plurality of substrates, the outer diameter of the mounting table is made larger than the outer diameter of the substrate. A guide that guides the outer edge of the substrate is provided on the outer periphery of the mounting table, so that the tolerance for the positioning accuracy of the substrate tray is increased, while original conveyance that increases the positioning accuracy of the substrate to the mounting table is realized. it can. As a result, the specification of the operation accuracy of the transfer robot that transfers the substrate tray can be relaxed, and the cost can be reduced. In addition, since the mounting table of the mounting unit on which the substrate is mounted is larger than the substrate, almost the entire back surface of the substrate can be brought into contact with the surface of the mounting table, and the temperature of the entire surface of the substrate can be controlled. The influence on the process caused by the temperature can be reduced, and the performance of the substrate processing apparatus can be improved. For example, if the substrate processing apparatus is a plasma CVD apparatus, the film quality during film formation can be improved.

本発明に係る基板の載置構造の実施形態(実施例1)を示す図であり、(a)は、その上面図、(b)は、(a)のA−A線矢視断面図である。It is a figure which shows embodiment (Example 1) of the mounting structure of the board | substrate which concerns on this invention, (a) is the top view, (b) is the sectional view on the AA arrow of (a). is there. 図1に示した載置構造の載置板を示す上面図である。It is a top view which shows the mounting plate of the mounting structure shown in FIG. 図1に示した載置構造の基板トレイを示す上面図である。It is a top view which shows the board | substrate tray of the mounting structure shown in FIG. 図3に示した基板トレイを搬送するロボットアームを示す図であり、(a)は、その上面図、(b)は、(a)のB−B線矢視断面図である。It is a figure which shows the robot arm which conveys the board | substrate tray shown in FIG. 3, (a) is the top view, (b) is BB arrow sectional drawing of (a). 図1に示した載置構造の一部を拡大した上面図である。It is the top view to which a part of mounting structure shown in FIG. 1 was expanded. (a)は、基板載置直前における図5のC−C線矢視断面図であり、(b)は、(a)の変形例である。(A) is CC sectional view taken on the line of FIG. 5 just before board | substrate mounting, (b) is a modification of (a). 基板載置後における図5のC−C線矢視断面図である。It is CC sectional view taken on the line of FIG. 5 after board | substrate mounting. 図2に示した載置板の変形例の一部を拡大した上面図である。It is the upper side figure which expanded a part of modification of the mounting board shown in FIG.

以下、本発明に係る基板の載置構造及び基板処理装置の実施形態について、図1〜図8を参照して説明を行う。   Hereinafter, embodiments of a substrate mounting structure and a substrate processing apparatus according to the present invention will be described with reference to FIGS.

なお、図示及び詳細な説明は省略するが、本発明に係る基板の載置構造は、例えば、プラズマCVD(Chemical Vapor Deposition)装置を含む半導体製造装置やLED(Light Emitting Diode)製造用のMEMS(Micro Electro Mechanical Systems)製造装置等の基板処理装置に適用可能である。又、本発明に係る基板の載置構造は、載置板及び基板トレイからなり、使用する基板の大きさに応じて、載置板及び基板トレイを交換することにより、既存の基板処理装置にも装着可能である。従って、本発明に係る基板の載置構造について、その載置構造を構成する載置板及び基板トレイを図示して説明する。   Although illustration and detailed description are omitted, the substrate mounting structure according to the present invention may be, for example, a semiconductor manufacturing apparatus including a plasma CVD (Chemical Vapor Deposition) apparatus or an LED (Light Emitting Diode) manufacturing MEMS (MEMS). (Micro Electro Mechanical Systems) It can be applied to a substrate processing apparatus such as a manufacturing apparatus. Further, the substrate mounting structure according to the present invention includes a mounting plate and a substrate tray. By replacing the mounting plate and the substrate tray in accordance with the size of the substrate to be used, an existing substrate processing apparatus can be used. Can also be installed. Accordingly, the substrate mounting structure according to the present invention will be described with reference to a mounting plate and a substrate tray that constitute the mounting structure.

(実施例1)
本実施例の基板の載置構造を構成する載置板及び基板トレイについて、図1〜図7を参照して説明すると共に、その変形例について、図8を参照して説明する。
Example 1
A mounting plate and a substrate tray constituting the substrate mounting structure of the present embodiment will be described with reference to FIGS. 1 to 7, and a modification thereof will be described with reference to FIG.

ここで、図1(a)は、本実施例の基板の載置構造を示す上面図であり、図1(b)は、図1(a)のA−A線矢視断面図であり、図2は、図1に示した載置構造の載置板を示す上面図であり、図3は、図1に示した載置構造の基板トレイを示す上面図である。又、図4(a)は、図3に示した基板トレイを搬送するロボットアームを示す上面図であり、図4(b)は、図4(a)のB−B線矢視断面図である。又、図5は、図1に示した載置構造の一部を拡大した上面図であり、図6(a)は、基板載置直前における図5のC−C線矢視断面図であり、図6(b)は、図6(a)の変形例であり、図7は、基板載置後における図5のC−C線矢視断面図である。又、図8は、図2に示した載置板の変形例であり、その一部を拡大して示す上面図である。   Here, FIG. 1A is a top view showing the substrate mounting structure of the present embodiment, and FIG. 1B is a cross-sectional view taken along line AA in FIG. FIG. 2 is a top view showing a mounting plate having the mounting structure shown in FIG. 1, and FIG. 3 is a top view showing a substrate tray having the mounting structure shown in FIG. 4A is a top view showing a robot arm that conveys the substrate tray shown in FIG. 3, and FIG. 4B is a cross-sectional view taken along line BB in FIG. 4A. is there. 5 is an enlarged top view of a part of the mounting structure shown in FIG. 1, and FIG. 6A is a cross-sectional view taken along the line CC in FIG. 6 (b) is a modification of FIG. 6 (a), and FIG. 7 is a cross-sectional view taken along the line CC in FIG. 5 after the substrate is placed. FIG. 8 is a modification of the mounting plate shown in FIG.

本実施例の基板の載置構造は、共に円板状の載置板10と基板トレイ20とを有している。載置板10の上面10aには、全体の形状が略円柱状となる基板載置台11が複数(本実施例では5つ)突設されている。基板載置台11は、後述する基板トレイ20の貫通孔21の数、位置、形状、大きさ等に対応して形成されており、基板載置台11、貫通孔21の数は、載置板10、基板トレイ20の大きさ及び載置する基板Wの大きさに応じて、適宜に設定される。載置する基板Wは、載置板10より小さい直径(載置板10の半径未満の直径)であり、ここでは、円形状のものを例示するが、他の形状のものでもよい。   The substrate mounting structure of this embodiment includes a disk-shaped mounting plate 10 and a substrate tray 20. On the upper surface 10a of the mounting plate 10, a plurality (five in the present embodiment) of substrate mounting tables 11 whose overall shape is substantially cylindrical are provided. The substrate mounting table 11 is formed corresponding to the number, position, shape, size, and the like of through holes 21 of the substrate tray 20 to be described later. The number of the substrate mounting table 11 and the through holes 21 depends on the mounting plate 10. The setting is appropriately made according to the size of the substrate tray 20 and the size of the substrate W to be placed. The substrate W to be placed has a diameter smaller than that of the placement plate 10 (diameter less than the radius of the placement plate 10). Here, a circular shape is illustrated, but other shapes may be used.

基板載置台11には、基板Wを載置する平坦な載置面11aが形成されている。載置面11aの直径は、基板Wの直径より大きくしており、そのため、基板載置台11の外径も基板Wの直径より大きくなっている。   On the substrate mounting table 11, a flat mounting surface 11a on which the substrate W is mounted is formed. The diameter of the mounting surface 11 a is larger than the diameter of the substrate W, so that the outer diameter of the substrate mounting table 11 is also larger than the diameter of the substrate W.

基板Wの直径より大きくした基板載置台11の外周部分には、その周方向の略全周に沿って(後述する切欠部13を除く全周に沿って)、円弧状のガイド12が複数(本実施例では3つ)形成されている。このガイド12は、その内周側を載置面11aから外周側に向かって傾斜して形成しており、載置される基板Wの外縁を載置面11aの方に案内するようにしている。このガイド12で案内することにより、基板Wの裏面のほぼ全面(切欠部13に対応する部分を除く裏面全面)が載置面11aに接することになる。   A plurality of arc-shaped guides 12 are provided on the outer peripheral portion of the substrate mounting table 11 larger than the diameter of the substrate W (along the entire circumference except for a notch portion 13 to be described later) along the circumferential direction. In this embodiment, three) are formed. The guide 12 is formed such that the inner peripheral side thereof is inclined from the mounting surface 11a toward the outer peripheral side, and the outer edge of the substrate W to be mounted is guided toward the mounting surface 11a. . By guiding with this guide 12, almost the entire back surface of the substrate W (the entire back surface excluding the portion corresponding to the notch 13) comes into contact with the mounting surface 11a.

ガイド12同士の間には、切欠部13が複数(本実施例では3つ)形成されている。この切欠部13に後述する基板保持部22が収容されることになる。切欠部13は、基板保持部22の数、位置、形状等に対応して形成すればよく、基板保持部22が少なくとも3つ必要であることから、少なくとも3つ形成すればよい。但し、この基板保持部22が基板Wを保持するものであるため、切欠部13の最内周の位置は、載置面11aの外縁より内側、つまり、載置された基板Wの外縁より内側に配置されている。一方、この切欠部13には、ガイド12のような案内機能は不要であり、基板保持部22を収容できる大きさがあれば十分である。例えば、切欠部13の大きさは、基板保持部22の大きさに、基板トレイ20を搬送する搬送ロボットの搬送精度(例えば、±0.3mm)を加算した大きさか、それより大きい大きさがあればよい。但し、基板Wは、その温度制御が行われているので、切欠部13の大きさは、基板Wの温度制御に影響が無い範囲で設定することが望ましい。   A plurality (three in this embodiment) of notches 13 are formed between the guides 12. A substrate holding part 22 to be described later is accommodated in the notch 13. The notches 13 may be formed corresponding to the number, position, shape, and the like of the substrate holders 22, and since at least three substrate holders 22 are required, at least three notches may be formed. However, since this substrate holding part 22 holds the substrate W, the innermost peripheral position of the notch 13 is inside the outer edge of the placement surface 11a, that is, inside the outer edge of the placed substrate W. Is arranged. On the other hand, the notch portion 13 does not need a guide function like the guide 12, and is sufficient if it has a size that can accommodate the substrate holding portion 22. For example, the size of the notch 13 is a size obtained by adding the transfer accuracy (for example, ± 0.3 mm) of the transfer robot that transfers the substrate tray 20 to the size of the substrate holding unit 22 or larger than that. I just need it. However, since the temperature control of the substrate W is performed, it is desirable to set the size of the notch 13 within a range that does not affect the temperature control of the substrate W.

又、載置板10の外周部分であり、かつ、基板載置台11を避けた部分に、ピン孔14が複数(本実施例では3つ)形成されており、このピン孔14に、基板トレイ20を昇降させるリフトピン15が挿通されている。   A plurality of pin holes 14 (three in the present embodiment) are formed in the outer peripheral portion of the mounting plate 10 and away from the substrate mounting table 11, and a substrate tray is formed in the pin holes 14. Lift pins 15 that raise and lower 20 are inserted.

ピン孔14は、リフトピン15の数、位置、形状等に対応して形成すればよく、リフトピン15が少なくとも3つ必要であることから、少なくとも3つ形成すればよい。又、図示は省略しているが、各基板載置台11の内部には、基板Wを静電吸着するための電極が各々埋め込まれており、これらの電極に電圧を印加することにより、基板Wが載置面11aと密接するように静電吸着を行っている。このように、載置板10は、基板Wの静電吸着を行っているため、セラミクス(例えば、窒化アルミニウム(AlN))等からなる誘電体から形成されている。   What is necessary is just to form the pin hole 14 according to the number, position, shape, etc. of the lift pin 15, and since at least three lift pins 15 are required, it is sufficient to form at least three. Although not shown in the figure, electrodes for electrostatically adsorbing the substrate W are embedded in each substrate mounting table 11, and by applying a voltage to these electrodes, the substrate W Is electrostatically attracted so as to be in close contact with the mounting surface 11a. As described above, the mounting plate 10 is formed of a dielectric made of ceramics (for example, aluminum nitride (AlN)) or the like because the substrate W is electrostatically attracted.

上述した構成の載置板10は、例えば、プラズマCVD装置等の処理容器の内部に配置された支持台16の上面に取り付けられる。そして、基板Wと共に基板トレイ20を載置板10上に搬送し、基板載置台11の載置面11aに基板Wを載置し、静電吸着した後、所望のプロセス、例えば、成膜処理を行うことになる。基板Wの温度制御のため、支持台16の内部には、温度制御機構、例えば、ヒータや冷媒が流れる流路等が設けられており、支持台16の内部の温度制御機構の温度制御を行うと共に、静電吸着により基板Wを載置面11aに密接させることにより、基板Wを所望の温度に制御することできる。   The mounting plate 10 having the above-described configuration is attached to the upper surface of the support base 16 disposed in a processing container such as a plasma CVD apparatus, for example. Then, the substrate tray 20 is transported onto the mounting plate 10 together with the substrate W, the substrate W is mounted on the mounting surface 11a of the substrate mounting table 11, and electrostatically attracted, and then a desired process, for example, a film forming process. Will do. In order to control the temperature of the substrate W, a temperature control mechanism, for example, a flow path through which a heater or a refrigerant flows is provided inside the support base 16, and performs temperature control of the temperature control mechanism inside the support base 16. At the same time, the substrate W can be controlled to a desired temperature by bringing the substrate W into close contact with the placement surface 11a by electrostatic attraction.

又、載置板10が支持台16の上面に取り付け可能な構造であることから、既存の基板処理装置へも適用可能であり、大きさの異なる基板にも対応可能となる。例えば、既存の基板処理装置が、大径の基板(例えば、12インチの基板)に対応したものであれば、その載置板を、小径の基板に対応した複数の基板載置台11を有する載置板10に交換すれば、容易に対応可能となる。小径の基板としては、Siに限らず、GaAs等の化合物半導体、サファイヤ、石英等があり、例えば、2インチや3インチ等の大きさとなる。   Further, since the mounting plate 10 can be attached to the upper surface of the support base 16, it can be applied to an existing substrate processing apparatus, and can support substrates of different sizes. For example, if an existing substrate processing apparatus is compatible with a large-diameter substrate (for example, a 12-inch substrate), the mounting plate has a plurality of substrate mounting tables 11 corresponding to small-diameter substrates. If it replaces | places with the mounting plate 10, it can respond easily. The small-diameter substrate is not limited to Si but includes a compound semiconductor such as GaAs, sapphire, quartz, and the like, and has a size of 2 inches or 3 inches, for example.

基板トレイ20には、基板トレイ20を貫通して、円形状の貫通孔21が複数(本実施例では5つ)形成されており、貫通孔21の内壁には、内側に向かって突設された基板保持部22が複数(本実施例では3つ)形成されている。基板トレイ20の貫通孔21の内側に基板Wを配置すると、3つの基板保持部22の上面に基板Wが載置されることになる。基板Wの保持のために、基板保持部22は、少なくとも3つ形成すればよい。そして、基板トレイ20を載置板10に載置したとき、貫通孔21の内側に基板載置台11が配置されることになり、基板載置台11の切欠部13の内側に基板保持部22が収容されることになる。   The substrate tray 20 has a plurality of circular through holes 21 (five in this embodiment) formed through the substrate tray 20, and the inner wall of the through hole 21 protrudes inward. A plurality of (three in this embodiment) substrate holding portions 22 are formed. When the substrate W is disposed inside the through hole 21 of the substrate tray 20, the substrate W is placed on the upper surfaces of the three substrate holding portions 22. In order to hold the substrate W, at least three substrate holding portions 22 may be formed. When the substrate tray 20 is placed on the placement plate 10, the substrate placement table 11 is disposed inside the through hole 21, and the substrate holding portion 22 is located inside the notch 13 of the substrate placement table 11. Will be housed.

又、基板トレイ20の外周には、その1箇所を切り欠くように形成したノッチ23が設けられており、後述するように、このノッチ23を用いて、基板トレイ20の方向決めが行われる。   Further, a notch 23 formed so as to cut out one portion is provided on the outer periphery of the substrate tray 20, and the direction of the substrate tray 20 is determined using the notch 23 as will be described later.

なお、基板トレイ20は、アルミナ(Al23)、シリコンカーバイド(SiC)、窒化アルミニウム(AlN)等のセラミクス材で形成されている。 The substrate tray 20 is formed of a ceramic material such as alumina (Al 2 O 3 ), silicon carbide (SiC), or aluminum nitride (AlN).

上述した構成の基板トレイ20は、既存の基板処理装置に備えられているアライメント機構を用いて、基板トレイ20の外周及びノッチ23を検出することにより、基板トレイ20のセンタリング及び方向決め、即ち、位置決めを行うことが可能である。従って、基板トレイ20は、アライメント機構を用いて位置決めされ、搬送ロボットのロボットアーム30により、所定の誤差範囲内で載置板10に載置されることになる。そのため、各々の基板Wは、基板トレイ20の貫通孔21の内側に載置すればよい。このように、基板トレイ20は、少なくとも基板Wの搬送機能を果たせばよい。   The substrate tray 20 having the above-described configuration detects the outer periphery of the substrate tray 20 and the notch 23 using an alignment mechanism provided in an existing substrate processing apparatus, thereby determining the centering and orientation of the substrate tray 20, that is, Positioning can be performed. Accordingly, the substrate tray 20 is positioned by using the alignment mechanism, and is placed on the placement plate 10 within a predetermined error range by the robot arm 30 of the transfer robot. Therefore, each substrate W may be placed inside the through hole 21 of the substrate tray 20. As described above, the substrate tray 20 only needs to perform at least the transfer function of the substrate W.

一方、基板トレイ20に載置した基板Wは、載置板10の基板載置台11のガイド12により位置決めされて、載置面11aに正しく載置されることになる。つまり、基板Wの位置決め機能となるガイド12が、載置対象となる基板載置台11自体に設けられており、基板Wを直接、機械的に位置決めしている。   On the other hand, the substrate W placed on the substrate tray 20 is positioned by the guide 12 of the substrate placement table 11 of the placement plate 10 and is correctly placed on the placement surface 11a. That is, the guide 12 serving as a positioning function for the substrate W is provided on the substrate mounting table 11 itself to be placed, and the substrate W is directly mechanically positioned.

ここで、基板トレイ20を用いて、基板Wを載置する際の一連の動作について、図4〜図7を参照して説明する。なお、ここでは、基板処理装置をプラズマCVD装置として説明を行う。   Here, a series of operations when the substrate W is placed using the substrate tray 20 will be described with reference to FIGS. Here, the substrate processing apparatus is described as a plasma CVD apparatus.

最初に、基板トレイ20に基板Wを載置する。このとき、基板Wは、貫通孔21の内側に配置できればいいので、例えば、作業者が基板用ピンセットを用いて基板Wを配置してもよい。   First, the substrate W is placed on the substrate tray 20. At this time, the substrate W only needs to be arranged inside the through hole 21. For example, the operator may arrange the substrate W using the substrate tweezers.

次に、基板Wを配置した基板トレイ20を、基板用カセットのスロットに挿入する。基板トレイ20の大きさが12インチ径であれば、12インチ用の基板カセットを流用することができる。   Next, the substrate tray 20 on which the substrates W are arranged is inserted into the slot of the substrate cassette. If the substrate tray 20 has a 12-inch diameter, a 12-inch substrate cassette can be used.

次に、プラズマCVD装置のロードロック室に基板カセットをセットする。ロードロック室が真空引きされて、真空下において、基板トレイ20の搬送が可能となる。   Next, the substrate cassette is set in the load lock chamber of the plasma CVD apparatus. The load lock chamber is evacuated, and the substrate tray 20 can be transferred under vacuum.

次に、図4に示すように、U字形状のハンド部31とハンド部31を支持するアーム部32を有するロボットアーム30を用いて、基板用カセットのスロットから基板トレイ20を引き出す。このとき、ハンド部31の上面に基板トレイ20が載置されて、搬送が行われる。その後、アライメント機構を用いて、基板トレイ20の位置決め(センタリング及び方向決め)を行う。   Next, as shown in FIG. 4, the substrate tray 20 is pulled out from the slot of the substrate cassette using a robot arm 30 having a U-shaped hand portion 31 and an arm portion 32 that supports the hand portion 31. At this time, the substrate tray 20 is placed on the upper surface of the hand unit 31 and transported. Thereafter, the substrate tray 20 is positioned (centering and direction determination) using the alignment mechanism.

次に、プラズマCVD装置の処理容器内の支持台16に取り付けた載置板10の上方へ基板トレイ20を搬送する。そして、リフトピン15を上昇させると、搬送された基板トレイ20がリフトピン15に持ち上げられて、リフトピン15上に載置されることになる。その後、リフトピン15に持ち上げられた基板トレイ20の下方から、ロボットアーム30を引き抜く。このとき、載置板10と基板トレイ20の位置関係は、図6(a)に示すように、基板載置台11の上方に貫通孔21が位置し、切欠部13の上方に基板保持部22が位置し、載置面11aの上方に基板Wが位置することになる。   Next, the substrate tray 20 is transported above the mounting plate 10 attached to the support 16 in the processing container of the plasma CVD apparatus. When the lift pins 15 are raised, the transported substrate tray 20 is lifted by the lift pins 15 and placed on the lift pins 15. Thereafter, the robot arm 30 is pulled out from below the substrate tray 20 lifted by the lift pins 15. At this time, as shown in FIG. 6A, the positional relationship between the mounting plate 10 and the substrate tray 20 is such that the through hole 21 is positioned above the substrate mounting table 11 and the substrate holding unit 22 is positioned above the notch 13. And the substrate W is positioned above the placement surface 11a.

なお、貫通孔21の内壁から基板保持部22の先端まで長さは、基板Wを貫通孔21の中心に配置したときの基板Wの外縁と貫通孔21の内壁の隙間の距離をGとすると、2×G以上の長さとすることが望ましい。これにより、基板Wが偏って貫通孔21の内側に載置されても、基板Wが基板トレイ20から落下することはない。又、図6(b)に示すように、貫通孔21の内壁から基板保持部22の上面に渡って、基板Wの外縁を基板保持部22に案内する傾斜部21aを設け、載置したときの基板Wの偏りを抑制するようにしてもよい。この場合、上述した基板保持部22の先端までの長さを、貫通孔21の内壁から突出する傾斜部21aの長さに応じて、短くしてもよい。   The length from the inner wall of the through hole 21 to the tip of the substrate holding part 22 is G, where G is the distance between the outer edge of the substrate W and the inner wall of the through hole 21 when the substrate W is arranged at the center of the through hole 21. It is desirable that the length is 2 × G or more. As a result, even if the substrate W is biased and placed inside the through hole 21, the substrate W does not fall from the substrate tray 20. Further, as shown in FIG. 6B, when the inclined portion 21a for guiding the outer edge of the substrate W to the substrate holding portion 22 is provided and placed from the inner wall of the through hole 21 to the upper surface of the substrate holding portion 22. The deviation of the substrate W may be suppressed. In this case, the length up to the tip of the substrate holding portion 22 described above may be shortened according to the length of the inclined portion 21 a protruding from the inner wall of the through hole 21.

次に、リフトピン15を載置板10の表面より低い位置に下げると、基板トレイ20が載置板10上に載置されることになるが、上述したアライメント機構により、所定の誤差範囲内で載置板10に載置されることになる。つまり、図7に示すように、基板載置台11が貫通孔21に挿入され、切欠部13が基板保持部22に挿入され、基板Wが載置面11aに配置されることになる。このとき、基板Wの上面と基板トレイ20の上面が、略同じ高さ位置となるように、基板トレイ20の厚さを形成している。   Next, when the lift pins 15 are lowered to a position lower than the surface of the mounting plate 10, the substrate tray 20 is mounted on the mounting plate 10, but within the predetermined error range by the alignment mechanism described above. It will be mounted on the mounting plate 10. That is, as shown in FIG. 7, the substrate mounting table 11 is inserted into the through hole 21, the notch 13 is inserted into the substrate holding unit 22, and the substrate W is disposed on the mounting surface 11a. At this time, the thickness of the substrate tray 20 is formed so that the upper surface of the substrate W and the upper surface of the substrate tray 20 are at substantially the same height position.

基板トレイ20については、その貫通孔21の内側に基板載置台11が配置され、かつ、その基板保持部22が基板載置台11の切欠部13に配置されれば十分であるので、基板トレイ20自体の位置精度は高くなくてもよい。つまり、基板トレイ20を搬送するロボットアーム30の搬送ロボットやアライメント機構の位置決め精度としては、比較的低い精度のもの(例えば、±0.3mm)を許容することができる。   As for the substrate tray 20, it is sufficient that the substrate mounting table 11 is disposed inside the through hole 21 and the substrate holding portion 22 is disposed in the notch 13 of the substrate mounting table 11. The position accuracy of itself may not be high. That is, the positioning accuracy of the transfer robot and alignment mechanism of the robot arm 30 that transfers the substrate tray 20 can be relatively low (for example, ± 0.3 mm).

従来は、高精度の搬送ロボット等を使用しないと、基板トレイが載置板の基板戴置台上に乗り上げてしまう等の装置安定動作上の問題が起こるおそれがあった。これに対して、本実施例の基板の載置構造では、基板トレイ20自体の位置決め精度が高精度でなくても、その精度の許容量が大きいので、基板トレイ20が載置板10の基板戴置台11上に乗り上げてしまう等の装置安定動作上の問題を低減することができる。   Conventionally, unless a high-accuracy transfer robot or the like is used, there is a risk of problems in stable operation of the apparatus, such as the substrate tray riding on the substrate mounting table of the mounting plate. On the other hand, in the substrate mounting structure of the present embodiment, even if the positioning accuracy of the substrate tray 20 itself is not high, the tolerance of the accuracy is large, so the substrate tray 20 is the substrate of the mounting plate 10. Problems on stable operation of the apparatus such as riding on the mounting table 11 can be reduced.

一方、基板トレイ20が載置板10上に載置されるときに、基板Wが基板載置台11に載置されることになるが、基板Wについては、基板載置台11のガイド12により案内されて、基板Wの裏面全体が基板載置台11の載置面11aと接触する位置に導かれることになり、ガイド12により、精度良く、基板Wが載置されることになる。この状態において、基板Wを基板載置台11の載置面11aに静電吸着するので、基板Wの裏面のほぼ全面(切欠部13に対応する部分を除く裏面全面)が載置面11aと密接することになる。   On the other hand, when the substrate tray 20 is placed on the placement plate 10, the substrate W is placed on the substrate placement table 11. The substrate W is guided by the guide 12 of the substrate placement table 11. Thus, the entire back surface of the substrate W is guided to a position in contact with the mounting surface 11 a of the substrate mounting table 11, and the substrate W is placed with high accuracy by the guide 12. In this state, since the substrate W is electrostatically attracted to the mounting surface 11a of the substrate mounting table 11, almost the entire back surface of the substrate W (the entire back surface excluding the portion corresponding to the notch 13) is in close contact with the mounting surface 11a. Will do.

そして、プラズマCVD装置の処理容器において、プラズマによる成膜処理が行われ、基板表面に所望の膜を成膜することになる。このとき、基板Wの裏面のほぼ全面が、基板載置台11の載置面11aに静電吸着されて、載置面11aと密接しているので、基板Wの面内の温度分布を均一にすると共に、機械的な変形を抑制することができる。   Then, a film forming process using plasma is performed in a processing vessel of the plasma CVD apparatus, and a desired film is formed on the substrate surface. At this time, since almost the entire back surface of the substrate W is electrostatically attracted to the mounting surface 11a of the substrate mounting table 11 and is in close contact with the mounting surface 11a, the temperature distribution in the surface of the substrate W is made uniform. In addition, mechanical deformation can be suppressed.

成膜処理が終了すると、リフトピン15が、載置板10の表面より高い位置に上昇させられて、ロボットアーム30により基板トレイ20が処理容器から搬送される。以降は、基板トレイ20毎に上述した手順が繰り返し行われることになる。   When the film forming process is completed, the lift pins 15 are raised to a position higher than the surface of the mounting plate 10, and the substrate tray 20 is transported from the processing container by the robot arm 30. Thereafter, the above-described procedure is repeated for each substrate tray 20.

このように、本実施例の基板の載置構造では、基板載置台11及び載置面11aの外径を基板Wの外径より大きくしており、基板Wの外径より大きくした基板載置台11の外周部分に、基板Wを載置面11aに位置決めするガイド12を設けている。このような構造を用いることにより、基板トレイ20の位置決め精度に左右されることなく、基板Wを基板載置台11の載置面11aに直接機械的に位置決めすることになり、基板Wを基板載置台11の載置面11aに精度良く載置することができる。   As described above, in the substrate mounting structure of the present embodiment, the substrate mounting table 11 and the mounting surface 11a have outer diameters larger than the outer diameter of the substrate W, and larger than the outer diameter of the substrate W. 11 is provided with a guide 12 for positioning the substrate W on the mounting surface 11a. By using such a structure, the substrate W is directly mechanically positioned on the mounting surface 11a of the substrate mounting table 11 without being affected by the positioning accuracy of the substrate tray 20, and the substrate W is mounted on the substrate. It can be mounted on the mounting surface 11a of the mounting table 11 with high accuracy.

そして、上述したように、基板Wの面内の温度分布を均一にすると共に、機械的な変形を抑制することができるので、プロセスへの悪い影響を低減することができ、基板処理装置の性能向上を図ることができる。又、基板トレイ20自体の位置決め精度の許容量が大きいので、搬送ロボットの動作精度の仕様を緩和することができ、基板処理装置の低コスト化を図ることができる。   As described above, since the temperature distribution in the surface of the substrate W can be made uniform and mechanical deformation can be suppressed, adverse effects on the process can be reduced, and the performance of the substrate processing apparatus can be reduced. Improvements can be made. Further, since the tolerance of the positioning accuracy of the substrate tray 20 itself is large, the specification of the operation accuracy of the transfer robot can be relaxed, and the cost of the substrate processing apparatus can be reduced.

なお、本実施例では、基板載置台11におけるガイド12を、切欠部13を除く全周に配置したが、図8に示す変形例のように、基板Wの外縁を案内するガイド15は、基板載置台11の外周部分に少なくとも3つ形成すれば、その長さを短くしてもよい。ガイド12は、三角断面の円弧状の形状であったが、ガイド15は、内周側に傾斜面を有する略三角柱の形状となる。この場合でも、図3に示した基板トレイ20が、そのまま使用可能である。   In the present embodiment, the guides 12 in the substrate mounting table 11 are arranged on the entire circumference except for the notch 13. However, as in the modification shown in FIG. If at least three are formed in the outer peripheral part of the mounting table 11, the length may be shortened. The guide 12 has a triangular cross-section arc shape, but the guide 15 has a substantially triangular prism shape having an inclined surface on the inner peripheral side. Even in this case, the substrate tray 20 shown in FIG. 3 can be used as it is.

本発明は、プラズマCVD装置を含む半導体製造装置及びMEMS製造装置等の基板処理装置に適用可能であり、これらの装置において、基板トレイを用いた基板の搬送システム全般に使用可能である。   The present invention can be applied to a substrate processing apparatus such as a semiconductor manufacturing apparatus and a MEMS manufacturing apparatus including a plasma CVD apparatus. In these apparatuses, the present invention can be used in general substrate transport systems using a substrate tray.

10 載置板(載置部)
11 基板載置台
12、15 ガイド
13 切欠部
16 支持台
20 基板トレイ
21 貫通孔
22 基板保持部
30 ロボットアーム
10 Placement plate (placement part)
DESCRIPTION OF SYMBOLS 11 Substrate mounting base 12, 15 Guide 13 Notch 16 Support base 20 Substrate tray 21 Through hole 22 Substrate holding part 30 Robot arm

Claims (5)

基板を内側に収容する複数の貫通孔と、前記貫通孔の内壁の少なくとも3箇所に突設され、前記基板を上面に保持する保持部とを備える基板トレイと、
前記貫通孔に対応して突設された複数の載置台と、前記保持部に対応して、前記載置台の外周部分の少なくとも3箇所に形成され、前記保持部を収容する切欠部とを備える載置部とを有し、
前記基板トレイを前記載置部上に載置すると、前記貫通孔の内側に前記載置台が配置されて、前記基板が前記載置台の上面に各々載置される基板の載置構造において、
前記載置台の外径を前記基板の外径より大きくすると共に、大きくした前記載置台の外周部分に前記基板の外縁を案内するガイドを設けたことを特徴とする基板の載置構造。
A substrate tray provided with a plurality of through-holes that accommodate the substrate inside, and holding portions that protrude from at least three locations on the inner wall of the through-hole and hold the substrate on the upper surface;
A plurality of mounting tables projecting corresponding to the through-holes, and corresponding notches formed in at least three of the outer peripheral portions of the mounting table corresponding to the holding units. A mounting portion;
When the substrate tray is placed on the placement unit, the placement table is disposed inside the through hole, and the substrate is placed on the top surface of the placement table.
A substrate mounting structure characterized in that the outer diameter of the mounting table is made larger than the outer diameter of the substrate, and a guide for guiding the outer edge of the substrate is provided on the outer peripheral portion of the mounting table.
請求項1に記載の基板の載置構造において、
前記ガイドの内周側を、前記基板を載置する前記載置台の上面から外周側に向かって傾斜させたことを特徴とする基板の載置構造。
In the board | substrate mounting structure of Claim 1,
2. A substrate mounting structure characterized in that the inner peripheral side of the guide is inclined from the upper surface of the mounting table to the outer peripheral side before mounting the substrate.
請求項1又は請求項2に記載の基板の載置構造において、
前記ガイドを、前記切欠部を除く、前記載置台の外周部分の全周に設けたことを特徴とする基板の載置構造。
In the board | substrate mounting structure of Claim 1 or Claim 2,
A substrate mounting structure, wherein the guide is provided on the entire periphery of the outer peripheral portion of the mounting table excluding the notch.
請求項1又は請求項2に記載の基板の載置構造において、
前記ガイドを、前記切欠部を除く、前記載置台の外周部分の少なくとも3箇所に設けたことを特徴とする基板の載置構造。
In the board | substrate mounting structure of Claim 1 or Claim 2,
The substrate mounting structure according to claim 1, wherein the guide is provided in at least three places on the outer peripheral portion of the mounting table excluding the notch.
請求項1から請求項4のいずれか1つに記載の基板の載置構造を備え、
前記載置台を介して、前記複数の基板の温度制御を行うと共に、前記複数の基板に所望の処理を行うことを特徴とする基板処理装置。
A substrate mounting structure according to any one of claims 1 to 4, comprising:
A substrate processing apparatus that performs temperature control of the plurality of substrates and performs desired processing on the plurality of substrates through the mounting table.
JP2011223742A 2011-10-11 2011-10-11 Substrate placement structure and substrate processing apparatus Pending JP2013084772A (en)

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