JP2013070459A - Rubber unit for power cable connection and manufacturing method of the same - Google Patents

Rubber unit for power cable connection and manufacturing method of the same Download PDF

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JP2013070459A
JP2013070459A JP2011205490A JP2011205490A JP2013070459A JP 2013070459 A JP2013070459 A JP 2013070459A JP 2011205490 A JP2011205490 A JP 2011205490A JP 2011205490 A JP2011205490 A JP 2011205490A JP 2013070459 A JP2013070459 A JP 2013070459A
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semiconductive
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power cable
cylindrical members
semiconductive layer
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JP5743275B2 (en
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Shozo Kobayashi
正三 小林
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Viscas Corp
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Abstract

PROBLEM TO BE SOLVED: To facilitate the removal of rubber injection parts and burrs after an internal semiconductive layer is molded and limit a region on a surface of the internal semiconductive layer which is roughened by polishing to a small area, thereby achieving the reduction of the manufacturing cost and stabilizing electric performance.SOLUTION: In a rubber unit for power cable connection is formed by integrally molding an internal semiconductive layer 1, semiconductive stress cone parts 2A, 2B, a reinforcement insulation layer 3, and an external semiconductive layer 4, the internal semiconductive layer 1 is divided into two pieces in the axial direction to form two semiconductive cylindrical members 1A, 1B. This structure reduces the size of a mold, rubber injection parts, burrs, and a polishing range. The two semiconductive cylindrical members 1A, 1B have outer peripheral surfaces, each of which is formed into a taper shape so that the inner end side is thinner than the outer end side.

Description

本発明は、CVケーブル等のプラスチック絶縁電力ケーブルの直線接続に用いる円筒状ゴムユニットと、その製造方法に関するものである。   The present invention relates to a cylindrical rubber unit used for linear connection of a plastic insulated power cable such as a CV cable, and a manufacturing method thereof.

従来の電力ケーブル接続用ゴムユニットを図8に示す。このゴムユニットは、シリコーンゴムやエチレンプロピレンゴム等からなる内部半導電層1、半導電性ストレスコーン部2A、2B、補強絶縁層3及び外部半導電層4を一体に成形したものである。ゴムユニットの内径は接続される電力ケーブルの絶縁層の外径よりも小さく設定されており、その径差による面圧で補強絶縁層3をケーブル絶縁層に密着させ、接続部の絶縁性能を確保するものである。内部半導電層1は、その中間部がケーブル導体接続部上に位置し、両端部がケーブル絶縁層上に位置して、高電圧側の電界の集中を緩和する部分である。半導電性ストレスコーン部2A、2Bはケーブル外部半導電層からケーブル絶縁層にかけての外周に位置し、低電圧側の電界の集中を緩和する部分である。   A conventional power cable connecting rubber unit is shown in FIG. This rubber unit is formed by integrally molding an inner semiconductive layer 1 made of silicone rubber, ethylene propylene rubber or the like, semiconductive stress cone portions 2A and 2B, a reinforcing insulating layer 3 and an outer semiconductive layer 4. The inner diameter of the rubber unit is set to be smaller than the outer diameter of the insulating layer of the power cable to be connected, and the reinforcing insulating layer 3 is brought into close contact with the cable insulating layer by the surface pressure due to the difference in diameter to ensure the insulating performance of the connecting portion. To do. The inner semiconductive layer 1 is a portion that has an intermediate portion located on the cable conductor connecting portion and both end portions located on the cable insulating layer to alleviate concentration of the electric field on the high voltage side. The semiconductive stress cone portions 2A and 2B are located on the outer periphery from the cable external semiconductive layer to the cable insulating layer, and are portions for relaxing the concentration of the electric field on the low voltage side.

このゴムユニットは次のようにして製造される(特許文献1〜3参照)。
1)半導電性ゴム材料を金型に注入して加熱加圧することにより、内部半導電層1及び半導電性ストレスコーン部2A、2Bをそれぞれ成形する。
2)内部半導電層1及び半導電性ストレスコーン部2A、2Bの成形時にできたゴム注入部やバリの部分を研磨して除去する。
3)研磨処理した内部半導電層1及び半導電性ストレスコーン部2A、2Bを補強絶縁層成形用金型にセットし、絶縁性のゴム材料を金型に注入して加熱加圧することにより、補強絶縁層3を成形する。
4)補強絶縁層3の成形時にできたゴム注入部やバリの部分を研磨して除去する。
5)補強絶縁層3の外側に外部半導電層成形用金型をセットし、半導電性ゴム材料を金型に注入して加熱加圧することにより(又は半導電性塗料を塗布することにより)、外部半導電層4を成形する。
なお、外部半導電層4は、内部半導電層1や半導電性ストレスコーン部2A、2Bと同様に、補強絶縁層3を成形する前に成形しておき、補強絶縁層成形用金型内にセットすることもできる。
This rubber unit is manufactured as follows (see Patent Documents 1 to 3).
1) The semiconductive rubber material is injected into a mold and heated and pressed to mold the internal semiconductive layer 1 and the semiconductive stress cone portions 2A and 2B.
2) The rubber injection part and the burr | flash part which were formed at the time of shaping | molding of the internal semiconductive layer 1 and the semiconductive stress cone part 2A, 2B are grind | polished and removed.
3) By setting the polished inner semiconductive layer 1 and semiconductive stress cone portions 2A and 2B in a reinforcing insulating layer molding die, injecting an insulating rubber material into the die and heating and pressurizing, The reinforcing insulating layer 3 is formed.
4) The rubber injection part and the burr | flash part which were formed at the time of shaping | molding of the reinforcement insulating layer 3 are grind | polished and removed.
5) By setting a mold for forming an external semiconductive layer on the outside of the reinforcing insulating layer 3, injecting a semiconductive rubber material into the mold and heating and pressurizing (or by applying a semiconductive paint) The outer semiconductive layer 4 is formed.
The outer semiconductive layer 4 is formed before the reinforcing insulating layer 3 is formed in the same manner as the inner semiconductive layer 1 and the semiconductive stress cone portions 2A and 2B, Can also be set.

特開平11−332081号公報Japanese Patent Laid-Open No. 11-332081 特開2001−268769号公報JP 2001-268769 A 特開2004−274913号公報JP 2004-274913 A

電力ケーブル接続用ゴムユニットは、高電圧で使用するため、異物が混入すると、異物を起点として絶縁破壊が生じる危険性があり、製造時には異物が混入しないように十分な対策をとる必要がある。特に内部半導電層の表面は電界が高いため、異物の付着に対しては細心の注意を払う必要がある。   Since the power cable connecting rubber unit is used at a high voltage, there is a risk of dielectric breakdown starting from the foreign matter when foreign matter is mixed in, and it is necessary to take sufficient measures to prevent foreign matter from entering during manufacturing. In particular, since the surface of the inner semiconductive layer has a high electric field, it is necessary to pay close attention to the adhesion of foreign substances.

内部半導電層は成形後に、ゴム注入部やバリを除去するために研磨を行わなければならないが、内部半導電層が大きいものになると、金型内でのゴムの膨張により金型合わせ目に生じるバリが厚くなり、研磨除去がしづらくなるだけでなく、金型の隅々にまでゴムを充填させるために、ゴム注入部を太くしたり、ゴム注入部を複数設けたりしなければならなくなり、結果として研磨除去がしづらくなり、研磨に時間がかかるという問題がある。   The internal semiconductive layer must be polished after molding in order to remove the rubber injection part and burrs. However, if the internal semiconductive layer becomes large, the expansion of the rubber in the mold will cause the mold to join the mold. Not only does the resulting burr become thicker and it becomes difficult to remove the polishing, but in order to fill the rubber into every corner of the mold, it is necessary to make the rubber injection part thick or provide multiple rubber injection parts As a result, there is a problem that polishing removal becomes difficult and polishing takes time.

また、研磨した表面は微小な凹凸が残り、そこに研磨カス等が付着しやすくなることから、電気的な弱点になりやすい。また電気的な弱点となるのを防止するために、研磨仕上げを念入りに行い、その上、念入りに内部半導電層の清掃を行わなければならないため、成形作業時間が長くなるという問題も生じている。   Further, since the polished surface is left with minute irregularities, and polishing residue or the like tends to adhere thereto, it tends to be an electrical weak point. In addition, in order to prevent electrical weak points, the polishing finish must be carefully performed, and the internal semiconductive layer must be carefully cleaned, resulting in a problem that the molding time becomes long. Yes.

本発明の目的は、以上のような問題点に鑑み、内部半導電層成形後のゴム注入部やバリの除去を容易に行えるようにし、しかも研磨により内部半導電層の表面が荒れる領域を小さく抑えられるようにして、製造コストの削減と電気性能の安定化を図った電力ケーブル接続用ゴムユニットと、その製造方法を提供することにある。   In view of the above problems, the object of the present invention is to make it possible to easily remove a rubber injection portion and burrs after molding an internal semiconductive layer, and to reduce a region where the surface of the internal semiconductive layer is roughened by polishing. An object of the present invention is to provide a power cable connecting rubber unit that can reduce the manufacturing cost and stabilize the electric performance, and a manufacturing method thereof.

上記目的を達成するため本発明は、内部半導電層、半導電性ストレスコーン部、補強絶縁層及び外部半導電層を一体に成形してなる電力ケーブル接続用ゴムユニットにおいて、前記内部半導電層を軸線方向に分割して複数の半導電性筒状部材で構成したことを特徴とするものである。   To achieve the above object, the present invention provides a rubber unit for connecting a power cable, in which an internal semiconductive layer, a semiconductive stress cone portion, a reinforcing insulating layer, and an external semiconductive layer are integrally formed. Is formed of a plurality of semi-conductive cylindrical members by dividing in the axial direction.

本発明において、複数の半導電性筒状部材のうち、内部半導電層の端部を形成する二つの半導電性筒状部材は、内端側が外端側より肉薄になるように外周面がテーパー状に形成されていることが好ましい。ここで、内端側とは電力ケーブル接続用ゴムユニットの軸線方向の中央側という意味であり、外端側とは前記軸線方向の端部側という意味である。   In the present invention, of the plurality of semiconductive cylindrical members, the two semiconductive cylindrical members forming the end portion of the inner semiconductive layer have an outer peripheral surface so that the inner end side is thinner than the outer end side. It is preferably formed in a tapered shape. Here, the inner end side means the central side in the axial direction of the power cable connecting rubber unit, and the outer end side means the end side in the axial direction.

本発明において、隣り合う半導電性筒状部材は、端面同士を接触させて又は半導電性ゴム系接着剤で接着させて配置することができる。   In the present invention, the adjacent semiconductive cylindrical members can be arranged with their end surfaces in contact with each other or bonded with a semiconductive rubber adhesive.

本発明において、隣り合う半導電性筒状部材は、端面間に隙間をあけ、その隙間に補強絶縁層の一部を入り込ませて又は端面同士を絶縁性ゴム系接着剤で接着させて配置することもできる。   In the present invention, the adjacent semiconductive cylindrical members are arranged with a gap between the end faces, and a part of the reinforcing insulating layer is inserted into the gap or the end faces are bonded with an insulating rubber adhesive. You can also.

また本発明に係る電力ケーブル接続用ゴムユニットの製造方法は、内部半導電層、半導電性ストレスコーン部、補強絶縁層及び外部半導電層を一体にした電力ケーブル接続用ゴムユニットを製造する方法であって、前記内部半導電層を軸線方向に複数に分割して複数の半導電性筒状部材として成形するものとし、かつ、それぞれの半導電性筒状部材を、型開き方向が軸線方向である金型を用いて成形することを特徴とするものである。   The method for manufacturing a power cable connecting rubber unit according to the present invention is a method for manufacturing a power cable connecting rubber unit in which an internal semiconductive layer, a semiconductive stress cone portion, a reinforcing insulating layer, and an external semiconductive layer are integrated. The inner semiconductive layer is divided into a plurality of axially divided inner semiconductive layers and formed as a plurality of semiconductive cylindrical members, and each of the semiconductive cylindrical members has a mold opening direction in the axial direction. It is characterized by forming using a mold which is

本発明によれば、内部半導電層を軸線方向に複数に分割して複数の半導電性筒状部材で構成したことにより、金型で成形する半導電性筒状部材の大きさ(軸線方向の長さ)は従来の内部半導電層に比較し格段に小さくなるので、ゴム注入部を小型化でき、バリを薄肉化することができる。このため、ゴム注入部やバリを除去するための研磨時間を短縮でき、補強絶縁層成形時の清掃時間を短縮できる。また、研磨により内部半導電層表面が荒れる領域を小さくできるため、電気的弱点が発生し難くなる。したがってゴムユニットの製造コストを削減できるとともに、電気性能を安定化させることができる。   According to the present invention, the inner semiconductive layer is divided into a plurality of axially divided inner semiconductive layers, and is configured by a plurality of semiconductive cylindrical members. Is significantly smaller than the conventional internal semiconductive layer, so that the rubber injection portion can be reduced in size and the burr can be reduced in thickness. For this reason, the polishing time for removing the rubber injection part and burrs can be shortened, and the cleaning time at the time of forming the reinforcing insulating layer can be shortened. Moreover, since the area | region where the surface of an internal semiconductive layer is roughened by grinding | polishing can be made small, an electrical weak point becomes difficult to generate | occur | produce. Therefore, the manufacturing cost of the rubber unit can be reduced and the electrical performance can be stabilized.

また、型開き方向が軸線方向である金型を用いて内部半導電層を構成する半導電性筒状部材を成形すれば、金型の分割面にできるバリは周方向になるため、半導電性筒状部材のバリを除去するための研磨を回転研磨機により行うことが可能となり、複雑な手作業による研磨が必要なくなり、研磨作業のさらなる省力化を図ることができる。   In addition, if a semiconductive cylindrical member constituting the internal semiconductive layer is molded using a mold whose mold opening direction is the axial direction, the burrs that can be formed on the dividing surface of the mold are in the circumferential direction. Polishing for removing the burrs of the cylindrical member can be performed by a rotary polishing machine, so that complicated manual polishing is not required, and further labor saving of the polishing work can be achieved.

本発明に係る電力ケーブル接続用ゴムユニットの一実施例を示す断面図。Sectional drawing which shows one Example of the rubber unit for power cable connection which concerns on this invention. 図1のゴムユニットの内部半導電層用の半導電性筒状部材を成形する金型を示す断面図。Sectional drawing which shows the metal mold | die which shape | molds the semiconductive cylindrical member for internal semiconductive layers of the rubber unit of FIG. 本発明に係る電力ケーブル接続用ゴムユニットの他の実施例を示す断面図。Sectional drawing which shows the other Example of the rubber unit for electric power cable connection which concerns on this invention. 本発明に係るゴムユニットのさらに他の実施例を示す断面図。Sectional drawing which shows the further another Example of the rubber unit which concerns on this invention. 本発明に係るゴムユニットのさらに他の実施例を示す断面図。Sectional drawing which shows the further another Example of the rubber unit which concerns on this invention. 本発明に係るゴムユニットのさらに他の実施例を示す断面図。Sectional drawing which shows the further another Example of the rubber unit which concerns on this invention. 本発明に係るゴムユニットのさらに他の実施例を示す断面図。Sectional drawing which shows the further another Example of the rubber unit which concerns on this invention. 従来の電力ケーブル接続用ゴムユニットを示す断面図。Sectional drawing which shows the conventional rubber unit for electric power cable connection.

<実施例1> 図1は本発明の一実施例を示す。この電力ケーブル接続用ゴムユニットは、内部半導電層1、半導電性ストレスコーン部2A、2B、補強絶縁層3及び外部半導電層4を一体に成形したものであるが、内部半導電層1が軸線方向に二分割され、二つの半導電性筒状部材1A、1Bで構成されている点に特徴がある。二つの半導電性筒状部材1A、1Bは同じ形、同じサイズであり、内端側が外端側より肉薄になるように外周面がテーパー状に形成されている。より詳細には、半導電性筒状部材1A、1Bの外端は凸曲面に形成されており、この外端から若干内端側の位置が最も外径の大きい最大外径部Dとなっている。そして、この最大外径部Dから内端側に向かって徐々に外径が小さくなるテーパー面となっている。このような形状にすると、D部周辺の電界及び内部半導電層1の中央部の電界の両方を低くできる。   Example 1 FIG. 1 shows an example of the present invention. This power cable connecting rubber unit is formed by integrally forming the inner semiconductive layer 1, the semiconductive stress cone portions 2A and 2B, the reinforcing insulating layer 3 and the outer semiconductive layer 4. Is characterized in that it is divided into two in the axial direction and is composed of two semiconductive cylindrical members 1A, 1B. The two semiconductive cylindrical members 1A and 1B have the same shape and the same size, and the outer peripheral surface is tapered so that the inner end side is thinner than the outer end side. More specifically, the outer ends of the semiconductive cylindrical members 1A and 1B are formed in a convex curved surface, and a position slightly on the inner end side from the outer end becomes the maximum outer diameter portion D having the largest outer diameter. Yes. And it is a taper surface where an outer diameter becomes small gradually from this largest outer diameter part D toward an inner end side. With such a shape, both the electric field around the D portion and the electric field at the central portion of the inner semiconductive layer 1 can be lowered.

二つの半導電性筒状部材1A、1Bは内端面を相互に接触させて配置されている。また二つの半導電性筒状部材1A、1Bは内端面同士を半導電性ゴム系接着剤で接着してあってもよい。二つの半導電性筒状部材1A、1Bを接着するには、補強絶縁層3の成形に用いる心金に二つの半導電性筒状部材1A、1Bをセットするときに、半導電性筒状部材1A、1Bの内端面同士を接着剤で接着すればよい。半導電性ゴム系接着剤としては、半導電層を形成する半導電性ゴムを使用してもよい。   The two semiconductive cylindrical members 1A and 1B are arranged with their inner end surfaces in contact with each other. The two semiconductive cylindrical members 1A and 1B may have their inner end surfaces bonded to each other with a semiconductive rubber adhesive. In order to bond the two semiconductive cylindrical members 1A and 1B, when the two semiconductive cylindrical members 1A and 1B are set on a mandrel used for forming the reinforcing insulating layer 3, the semiconductive cylindrical members are formed. What is necessary is just to adhere | attach the inner end surfaces of member 1A, 1B with an adhesive agent. As the semiconductive rubber-based adhesive, a semiconductive rubber forming a semiconductive layer may be used.

半導電性筒状部材1A、1Bは図2に示すような金型で成形することができる。この金型5は、半導電性筒状部材1A、1Bの内周面を成形する金型部材5Aと、外周面を成形する金型部材5Bとで構成され、中心軸線に垂直な平面が分割面Pとなっていて、軸線方向には分割されていないものである。この金型5の型開き方向、すなわち成形品(半導電性筒状部材)を取り出すために金型部材5A、5Bを離す方向は、軸線方向である。   The semiconductive cylindrical members 1A and 1B can be formed by a mold as shown in FIG. The mold 5 includes a mold member 5A for molding the inner peripheral surface of the semiconductive cylindrical members 1A and 1B, and a mold member 5B for molding the outer peripheral surface, and a plane perpendicular to the central axis is divided. It is a surface P and is not divided in the axial direction. The mold opening direction of the mold 5, that is, the direction in which the mold members 5 </ b> A and 5 </ b> B are separated in order to take out the molded product (semiconductive cylindrical member) is the axial direction.

このような金型5で半導電性筒状部材1A、1Bを成形すると、金型分割面によるバリは半導電性筒状部材1A、1Bの外周面に周方向に発生するため、バリをとるための研磨作業は回転研磨機により簡単にかつ高精度で行うことができる。また、半導電性筒状部材1A、1Bは従来の約半分の長さであるため、金型5は従来の一体型内部半導電層1を成形するものより格段に小型なものでよく、発生するバリも薄く抑制することができる。   When the semiconductive cylindrical members 1A and 1B are molded with such a mold 5, burrs are generated on the outer peripheral surfaces of the semiconductive cylindrical members 1A and 1B in the circumferential direction. Therefore, the polishing operation can be performed easily and with high accuracy by a rotary polishing machine. In addition, since the semiconductive cylindrical members 1A and 1B are about half the length of the conventional one, the mold 5 may be much smaller than the conventional one that forms the integral internal semiconductive layer 1 and is generated. It is possible to suppress the burr to be thin.

従来、内部半導電層を製造する場合には、中心軸線を含む平面が分割面となっている金型、すなわち中心軸線と直交する方向に型開きする金型を用いていたため、内部半導電層の表面に軸線方向にバリが発生し、このバリを除去するために熟練作業者による丁寧な研磨作業が必要となり、製造コストが高くなる問題があったが、本発明はこの問題を解消できる。   Conventionally, when manufacturing an internal semiconductive layer, a mold whose plane including the central axis is a dividing surface, that is, a mold that opens in a direction perpendicular to the central axis is used. There is a problem in that burrs are generated in the axial direction on the surface of the surface, and a careful polishing operation by a skilled worker is required to remove the burrs, which increases the manufacturing cost. However, the present invention can solve this problem.

前記金型5の分割面Pは、半導電性筒状部材1A(1B)の最大外径部Dの箇所に設けられる。したがって、この実施例では、半導電性筒状部材1A(1B)の外端より若干内端側へ寄った所に分割面Pが位置している。電力ケーブル接続用ゴムユニット1において、この実施例の半導電性筒状部材1A(1B)の最大外径部Dが位置する箇所は、電界密度が低くなるように設計することが可能なので、金型5の分割面Pに生じるバリを除去する作業に要求される精度を緩和できる利点がある。   The dividing surface P of the mold 5 is provided at the location of the maximum outer diameter portion D of the semiconductive cylindrical member 1A (1B). Therefore, in this embodiment, the dividing surface P is located at a position slightly closer to the inner end side than the outer end of the semiconductive cylindrical member 1A (1B). In the power cable connecting rubber unit 1, the portion where the maximum outer diameter portion D of the semiconductive cylindrical member 1A (1B) of this embodiment is located can be designed so that the electric field density is low. There is an advantage that the accuracy required for the work of removing burrs generated on the dividing surface P of the mold 5 can be relaxed.

<実施例2> 図3は本発明の他の実施例を示す。この電力ケーブル接続用ゴムユニットは、内部半導電層1が軸線方向に二分割され、二つの半導電性筒状部材1A、1Bで構成されているものであるが、実施例1と異なる点は、二つの半導電性筒状部材1A、1Bが内端面間に隙間をあけて配置され、補強絶縁層3が半導電性筒状部材1A、1B間の隙間に入り込むように形成されていることである。このような構成でも、半導電性筒状部材1A、1Bは導体接続部を介して導通するので、隙間が電気的弱点となることはない。   <Embodiment 2> FIG. 3 shows another embodiment of the present invention. This power cable connecting rubber unit has an internal semiconductive layer 1 divided into two in the axial direction and is composed of two semiconductive cylindrical members 1A and 1B. The two semiconductive cylindrical members 1A and 1B are arranged with a gap between the inner end faces, and the reinforcing insulating layer 3 is formed so as to enter the gap between the semiconductive cylindrical members 1A and 1B. It is. Even in such a configuration, the semiconductive cylindrical members 1A and 1B are electrically connected via the conductor connecting portion, so that the gap does not become an electrical weak point.

なお、二つの半導電性筒状部材1A、1Bは、補強絶縁層3の成形に用いる心金に二つの半導電性筒状部材1A、1Bをセットするときに、内端面同士を絶縁性ゴム系接着剤で接着しておいてもよい。   The two semiconductive cylindrical members 1A and 1B are formed by insulating rubber between the inner end faces when the two semiconductive cylindrical members 1A and 1B are set on a mandrel used for forming the reinforcing insulating layer 3. You may adhere | attach with a system adhesive.

上記以外の構成は実施例1と同じであるので、図1と同一部分には同一符号を付して説明を省略する。   Since the configuration other than the above is the same as that of the first embodiment, the same parts as those in FIG.

<実施例3> 図4は本発明のさらに他の実施例を示す。この電力ケーブル接続用ゴムユニットは、二つの半導電性筒状部材1A、1Bが直管状(内外径一定)に成形されているものである。それ以外の構成は実施例1と同じであるので、図1と同一部分には同一符号を付して説明を省略する。   <Embodiment 3> FIG. 4 shows still another embodiment of the present invention. In this power cable connecting rubber unit, two semiconductive cylindrical members 1A and 1B are formed in a straight tube shape (constant inner and outer diameters). Since the other configuration is the same as that of the first embodiment, the same parts as those in FIG.

<実施例4> 図5は本発明のさらに他の実施例を示す。この電力ケーブル接続用ゴムユニットも、二つの半導電性筒状部材1A、1Bが直管状(内外径一定)に成形されているものである。それ以外の構成は実施例2と同じであるので、図3と同一部分には同一符号を付して説明を省略する。   <Embodiment 4> FIG. 5 shows still another embodiment of the present invention. In this power cable connecting rubber unit, the two semiconductive cylindrical members 1A and 1B are formed in a straight tube shape (constant inner and outer diameters). Since the other configuration is the same as that of the second embodiment, the same parts as those in FIG.

<実施例5> 図6は本発明のさらに他の実施例を示す。この電力ケーブル接続用ゴムユニットは、二つの半導電性筒状部材1A、1Bの外周面が、外端側が内端側より肉薄になるようにテーパー状に形成されているものである。それ以外の構成は実施例2と同じであるので、図3と同一部分には同一符号を付して説明を省略する。この場合も、二つの半導電性筒状部材1A、1Bは内端面同士を接触させて、あるいは半導電性ゴム系接着剤で接着させて配置されていてもよい。   <Embodiment 5> FIG. 6 shows still another embodiment of the present invention. In the power cable connecting rubber unit, the outer peripheral surfaces of the two semiconductive cylindrical members 1A and 1B are formed in a tapered shape so that the outer end side is thinner than the inner end side. Since the other configuration is the same as that of the second embodiment, the same parts as those in FIG. Also in this case, the two semiconductive cylindrical members 1A and 1B may be arranged with their inner end surfaces in contact with each other or bonded with a semiconductive rubber adhesive.

<実施例6> 上述の実施例では内部半導電層1を2分割した例を示したが、本発明において、内部半導電層1は3以上に分割されたものであっても良い。
図7に示す電力ケーブル接続用ゴムユニットは、内部半導電層1を5つに分割したものである。すなわち、5つの半導電性筒状部材1C、1D、1E、1F、1Gで内部半導電層1を構成している。これらのうち、半導電性筒状部材1C、1Gは内部半導電層1の端部を形成しており、半導電性筒状部材1Eは内部半導電層1の中央部を形成しており、残る半導電性筒状部材1D、1Fは内部半導電層1の端部と中央部との間を形成している。
<Example 6> Although the example which divided | segmented the internal semiconductive layer 1 into 2 was shown in the above-mentioned Example, the internal semiconductive layer 1 may be divided | segmented into 3 or more in this invention.
The power cable connecting rubber unit shown in FIG. 7 is obtained by dividing the inner semiconductive layer 1 into five parts. That is, the inner semiconductive layer 1 is composed of five semiconductive cylindrical members 1C, 1D, 1E, 1F, and 1G. Among these, the semiconductive cylindrical members 1C and 1G form the end of the internal semiconductive layer 1, the semiconductive cylindrical member 1E forms the center of the internal semiconductive layer 1, The remaining semiconductive cylindrical members 1 </ b> D and 1 </ b> F form between the end portion and the central portion of the internal semiconductive layer 1.

内部半導電層1の端部を形成する二つの半導電性筒状部材1C、1Gは、同じ形状であり、内端側が外端側より肉薄になるように外周面がテーパー状に形成されている。より詳細には、半導電性筒状部材1C、1Gの外端は曲面に形成されており、この外端から若干内端側の位置が最も径の大きい最大外径部Dとなっている。そして、この最大外径部Dから内端側に向って徐々に外径が小さくなるテーパー面となっている。
内部半導電層1の中央部を形成する半導電性筒状部材1Eは、外径がほぼ均一で肉厚が薄い円筒状である。
残る半導電性筒状部材1D、1Fは、内端側が外端側より肉厚が薄くなるように外周面がテーパー状に形成されている。具体的には、半導電性筒状部材1D、1Fの外端の外径は、半導電性筒状部材1C、1Gの内端の外径と同じ寸法になっている。また、半導電性筒状部材1D、1Fの内端の外径は、中央にある半導電性筒状部材1Eの端部の外径と同じ寸法になっている。
The two semiconductive cylindrical members 1C and 1G forming the end of the inner semiconductive layer 1 have the same shape, and the outer peripheral surface is tapered so that the inner end side is thinner than the outer end side. Yes. More specifically, the outer ends of the semiconductive cylindrical members 1C and 1G are formed in a curved surface, and the position on the inner end side slightly from the outer end is the maximum outer diameter portion D having the largest diameter. And it becomes a taper surface where an outer diameter becomes small gradually toward the inner end side from this largest outer diameter part D.
The semiconductive cylindrical member 1E that forms the central portion of the inner semiconductive layer 1 has a cylindrical shape with a substantially uniform outer diameter and a small thickness.
The remaining semiconductive cylindrical members 1D and 1F are tapered on the outer peripheral surface so that the inner end side is thinner than the outer end side. Specifically, the outer diameters of the outer ends of the semiconductive cylindrical members 1D and 1F are the same as the outer diameters of the inner ends of the semiconductive cylindrical members 1C and 1G. The outer diameter of the inner ends of the semiconductive cylindrical members 1D and 1F is the same as the outer diameter of the end portion of the semiconductive cylindrical member 1E at the center.

この場合も、それぞれの半導電性筒状部材同士は端面同士を接触させて、あるいは半導電性ゴム系接着剤で接着させて配置されていてもよい。それ以外の構成は実施例1と同じなので、図1と同一部分には同一符号を付して説明を省略する。   Also in this case, the semiconductive cylindrical members may be arranged with their end surfaces in contact with each other or bonded with a semiconductive rubber-based adhesive. Since the other configuration is the same as that of the first embodiment, the same parts as those in FIG.

1:内部半導電層
1A、1B:半導電性筒状部材
2A、2B:半導電性ストレスコーン部
3:補強絶縁層
4:外部半導電層
5:金型
5A、5B:金型部材
1: Internal semiconductive layer 1A, 1B: Semiconductive cylindrical member 2A, 2B: Semiconductive stress cone part 3: Reinforcing insulating layer 4: External semiconductive layer 5: Mold 5A, 5B: Mold member

Claims (5)

内部半導電層、半導電性ストレスコーン部、補強絶縁層及び外部半導電層を一体に成形してなる電力ケーブル接続用ゴムユニットにおいて、前記内部半導電層を軸線方向に分割して複数の半導電性筒状部材で構成したことを特徴とする電力ケーブル接続用ゴムユニット。   In a power cable connecting rubber unit formed by integrally forming an internal semiconductive layer, a semiconductive stress cone portion, a reinforcing insulating layer, and an external semiconductive layer, the internal semiconductive layer is divided into a plurality of semi-conductors by dividing the internal semiconductive layer in the axial direction. A power cable connecting rubber unit comprising a conductive cylindrical member. 複数の半導電性筒状部材のうち内部半導電層の端部を形成する二つの半導電性筒状部材は、内端側が外端側より肉薄になるように外周面がテーパー状に形成されていることを特徴とする請求項1記載の電力ケーブル接続用ゴムユニット。   Two semiconductive cylindrical members forming the end of the inner semiconductive layer among the plurality of semiconductive cylindrical members are formed with a tapered outer peripheral surface so that the inner end side is thinner than the outer end side. The rubber unit for connecting a power cable according to claim 1. 隣り合う半導電性筒状部材が、端面同士を接触させて又は半導電性ゴム系接着剤で接着させて配置されていることを特徴とする請求項1又は2記載の電力ケーブル接続用ゴムユニット。   3. The rubber unit for connecting a power cable according to claim 1 or 2, wherein the adjacent semiconductive cylindrical members are disposed with their end surfaces in contact with each other or bonded with a semiconductive rubber adhesive. . 隣り合う半導電性筒状部材が、端面間に隙間をあけ、その隙間に補強絶縁層の一部を入り込ませて又は端面同士を絶縁性ゴム系接着剤で接着させて配置されていることを特徴とする請求項1又は2記載の電力ケーブル接続用ゴムユニット。   Adjacent semi-conductive cylindrical members are arranged with a gap between the end faces, and a part of the reinforcing insulating layer is inserted into the gap or the end faces are bonded with an insulating rubber adhesive. The rubber unit for connecting a power cable according to claim 1 or 2, characterized in that 内部半導電層、半導電性ストレスコーン部、補強絶縁層及び外部半導電層を一体にした電力ケーブル接続用ゴムユニットの製造方法において、前記内部半導電層を軸線方向に分割して複数の半導電性筒状部材として成形するものとし、かつ、それぞれの半導電性筒状部材を、型開き方向が軸線方向である金型を用いて成形することを特徴とする電力ケーブル接続用ゴムユニットの製造方法。   In the method of manufacturing a power cable connecting rubber unit in which an internal semiconductive layer, a semiconductive stress cone part, a reinforcing insulating layer, and an external semiconductive layer are integrated, the internal semiconductive layer is divided in the axial direction to form a plurality of semiconductive layers. A rubber unit for connecting a power cable, characterized in that it is molded as a conductive cylindrical member, and each semiconductive cylindrical member is molded using a mold whose opening direction is the axial direction. Production method.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015061480A (en) * 2013-09-20 2015-03-30 株式会社ビスキャス Normal temperature shrinkage type rubber unit, manufacturing method of the same, and power cable connection structure
JP2016012974A (en) * 2014-06-27 2016-01-21 株式会社ジェイ・パワーシステムズ Unit for connecting power cable, and connection method of power cable

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63156530U (en) * 1987-03-30 1988-10-13
JP2010259134A (en) * 2009-04-21 2010-11-11 Viscas Corp Internal semiconductive layer, insulating tube unit using the same, and molding die for molding the internal semiconductive layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63156530U (en) * 1987-03-30 1988-10-13
JP2010259134A (en) * 2009-04-21 2010-11-11 Viscas Corp Internal semiconductive layer, insulating tube unit using the same, and molding die for molding the internal semiconductive layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015061480A (en) * 2013-09-20 2015-03-30 株式会社ビスキャス Normal temperature shrinkage type rubber unit, manufacturing method of the same, and power cable connection structure
JP2016012974A (en) * 2014-06-27 2016-01-21 株式会社ジェイ・パワーシステムズ Unit for connecting power cable, and connection method of power cable

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