JP2013062270A - Plasma generation apparatus and cvd apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma generation apparatus which generates a metal function material particle gas and supplies the generated metal functional material particle gas to the CVD chamber side.SOLUTION: A plasma generation apparatus includes: an electrode cell and a housing enclosing the electrode cell. The electrode cell has: a first electrode 3; a discharge space 6; a second electrode 1; dielectric bodies 2a, 2b; and a through port PH formed at a center part when viewed in a plan view. An insulation cylindrical part 21, having a cylindrical shape, is disposed in the through port PH and has jet holes 21x at a side surface part of the insulation cylindrical part 21 having the cylindrical shape. Further, the plasma generation apparatus includes a conductive member disposed in a cavity part 21A of the insulation cylindrical part 21.

Description

  The present invention relates to a plasma generator capable of generating a large amount of plasma excited gas (active gas, radical gas) having high energy from a source gas in a large amount, and the plasma excited gas output in the plasma generator The present invention relates to a CVD apparatus in which a target material is collided to cause a sputter reaction of deposited material particles, and the deposition treated material particles are efficiently guided to the CVD device.

  In the manufacture of semiconductor devices, a low impedance high conductive film equivalent to circuit wiring in a semiconductor chip, a high magnetic film having a circuit wiring coil function and a magnet function, a high dielectric film having a circuit capacitor function, and electrical As a method for forming a highly functional film such as a highly insulating film by oxidation or nitridation having a high insulating function with a small leakage current, a thermal CVD (Chemical Vapor Deposition) apparatus, a photo CVD apparatus or a plasma CVD apparatus In particular, a plasma CVD apparatus is often used. For example, the plasma CVD apparatus has an advantage that the film forming temperature can be lowered, the film forming speed is high, and the film forming process can be performed in a short time than the thermal / photo CVD apparatus.

For example, when a gate insulating film such as a nitride film (SiON, HfSiON, etc.) or an oxide film (SiO ₂ , HfO ₂ ) is formed on a semiconductor substrate, the following technique using a plasma CVD apparatus is generally adopted. Has been.

That is, a gas such as NH ₃ (ammonia), N ₂ , O ₂ , or O ₃ (ozone) and a metal precursor gas of silicon or hafnium material are directly supplied to a film forming chamber such as a CVD processing apparatus. In the film forming chamber, chemical reaction by heat, catalyst, etc. is promoted, the precursor gas is dissociated, and NH ₃ (ammonia) or N ₂ , O ₂ , O, to which metal particles from the dissociated precursor are added. _{3 A} highly functional film is formed by oxidizing or nitriding with a gas such as (ozone) and depositing it on a semiconductor wafer that is the object to be processed.

  Therefore, in the CVD processing apparatus, high-frequency plasma and microwave plasma are generated directly in the film-forming processing chamber, and the wafer substrate is exposed to radical gas, high-energy plasma ions and electrons, A highly functional film such as a nitride film or an oxide film is formed on the wafer substrate.

  For example, Patent Document 1 exists as a prior document disclosing the configuration of a plasma CVD apparatus.

  However, in the film forming process in the plasma CVD apparatus, the wafer substrate is directly exposed to the plasma as described above. Therefore, there has always been a problem that the wafer substrate is greatly damaged by plasma (ion or electron) due to deterioration of performance of the semiconductor function.

  On the other hand, in the film forming process using the thermal / photo CVD apparatus, the wafer substrate is not damaged by plasma (ions or electrons), and a high-functional film such as a high-quality nitride film or oxide film is formed. However, in the film forming process, it is difficult to obtain a high concentration and a large amount of nitrogen radical gas source or oxygen radical source, and as a result, there is a problem that a film forming time is very long.

In a recent thermal / photo CVD apparatus, a source gas having a high concentration of NH ₃ gas or O ₃ gas that is easily dissociated by irradiation with heat or light is used, and a heating catalyst is provided in the CVD chamber. As a result, in the thermal / photo CVD apparatus, the dissociation of the gas in the chamber is promoted by a catalytic action, and the film formation time of a high-functional film such as a nitride film or an oxide film can be shortened. Improvement of film time is difficult.

  Thus, there is a remote plasma type film forming apparatus that can reduce damage to the wafer substrate due to plasma and shorten the film forming time (for example, see Patent Document 2).

  In the technology according to Patent Document 2, the plasma generation region and the material processing region are separated by a partition wall (plasma confining electrode). Specifically, in the technique according to Patent Document 2, only the neutral active species is supplied onto the wafer substrate by providing the plasma confining electrode between the high-frequency applying electrode and the counter electrode on which the wafer substrate is installed. I am letting.

JP 2007-266489 A JP 2001-135628 A

  However, in the technique according to Patent Document 2 relating to semiconductor wafer film formation, suppression of plasma damage to a material to be processed (wafer substrate) is not complete, and the apparatus configuration is complicated.

  In the case of a remote plasma type film forming apparatus, a metal functional material particle gas such as nitridation or oxidation is generated on the plasma generator side, the generated metal functional material particle gas is supplied to a CVD chamber, In the CVD chamber, it is preferable to specialize only in the function of forming a film on a heated material to be processed. In other words, in addition to film formation in the CVD chamber, the generation of metal functional material particle gas or the like can be performed in two conditions: conditions for obtaining suitable metal functional material particles and suitable film formation conditions. It is difficult and unpreferable to realize.

  Then, an object of this invention is to provide the plasma generator which can produce | generate metal functional substance particle gas and can supply the said production | generation metal functional substance particle gas to the CVD chamber side. Furthermore, an object of the present invention is to provide a CVD apparatus that can prevent plasma damage to a material to be processed by using the plasma generator.

  In order to achieve the above object, a plasma generating apparatus according to the present invention includes an electrode cell, a power supply unit that applies an AC voltage to the electrode cell, a casing that surrounds the electrode cell, and an outside of the casing. A source gas supply unit configured to supply a source gas into the housing, and the electrode cell faces the first electrode so as to form a first electrode and a discharge space. Two electrodes, a dielectric disposed on at least one of the main surface of the first electrode facing the discharge space and the main surface of the second electrode facing the discharge space; A through hole formed in a central portion and penetrating in a facing direction where the first electrode and the second electrode face each other, and has a cylindrical shape and is disposed inside the through hole. Insulating cylinder part which is provided and has an ejection hole in the cylindrical side part And a conductive member disposed in the hollow portion of the insulating cylinder portion includes further.

  The plasma generator according to the present invention supplies an electrode cell, a power supply unit that applies an AC voltage to the electrode cell, a casing that surrounds the electrode cell, and a raw material gas that is supplied from the outside of the casing into the casing. A source gas supply unit, and the electrode cell includes a first electrode, a second electrode facing the first electrode so as to form a discharge space, and the discharge space. A dielectric disposed on at least one of the main surface of the first electrode facing and the main surface of the second electrode facing the discharge space; A through-hole penetrating in the facing direction facing the second electrode and the second electrode, and having a cylindrical shape, disposed inside the through-hole, and having the cylindrical shape An insulating cylinder part having a jet hole in the side part and a cavity part of the insulating cylinder part And a conductive member to be provided with further.

  Therefore, the plasma excited gas ejected from the ejection hole of the insulating cylinder portion is applied to the conductive member in the cavity portion of the insulating cylinder portion (to cause particle collision), thereby generating sputtered particle metal, and The plasma excitation gas and the particle metal can be brought into contact. When the plasma excitation gas collides with the conductive member and the two come into contact with each other, a chemical reaction occurs with the sputtered particle metal, and a metal functional material particle gas such as nitriding or oxidation is generated by the chemical reaction. That is, the plasma generating apparatus according to the present invention can generate a metal functional material particle gas and supply the generated metal functional material particle gas to the CVD chamber side.

It is sectional drawing which shows the whole structure of the CVD apparatus 300 which concerns on Embodiment 1. FIG. It is an expanded sectional view which shows the structure of an electrode cell. It is an expansion perspective view which shows the structure of the gas output flange 14c. FIG. 5 is an enlarged cross-sectional view showing a configuration inside an insulating cylinder portion 21 and the like in a plasma generator according to Embodiment 2.

  Hereinafter, the present invention will be specifically described with reference to the drawings showing embodiments thereof.

<Embodiment 1>
In this embodiment mode, a structure in which the plasma apparatus according to the present invention is applied to a CVD apparatus will be described.

  FIG. 1 is a cross-sectional view showing a configuration of CVD apparatus 300 according to the present embodiment. Further, FIG. 2 shows an enlarged cross-sectional view of a region surrounded by a dashed line in FIG. 1 (a detailed cross-sectional configuration of the electrode cell is disclosed in FIG. 2). Here, in FIG. 2, the conductive member 42 is not shown for simplification of the drawing.

  As shown in FIG. 1, the CVD apparatus 300 includes a plasma generation apparatus 100, a CVD chamber 200, and an exhaust gas decomposition processing apparatus 28.

  First, the configuration of the plasma generator 100 according to the present invention will be described.

  As shown in FIG. 1, in the plasma generator 100, the plurality of electrode cells are stacked in the vertical direction in the drawing. In the enlarged cross-sectional view of FIG. 2, two electrode cells are shown. The structure of the electrode cell having a laminated structure will be described with reference to FIG.

  The planar shape of each electrode cell viewed from the vertical direction in FIGS. 1 and 2 is a donut shape. That is, the outer shape of the electrode cell in plan view is substantially disk-shaped, and a through-hole PH penetrating in the vertical direction (electrode cell stacking direction) is formed in the center of the electrode cell.

  Each electrode cell includes a low-voltage electrode 1, dielectrics 2 a and 2 b, a high-voltage electrode 3, an insulating plate 4, and a high-pressure cooling plate 5. A plurality of electrode cells are stacked in the vertical direction of FIGS. 1 and 2 (the direction in which the high voltage electrode 3 and the low voltage electrode 1 face each other).

  Here, the planar view shape of each electrode cell is a circle having the through hole PH as described above. Therefore, each of the members 1, 2a, 2b, 3, 4, 5 is a plate shape having a circular shape in plan view. Each mouth PH is provided.

  As shown in FIG. 2, an AC voltage from an AC power source 17 is applied to the low voltage electrode 1 and the high voltage electrode 3. Here, the low-voltage electrode 1 becomes a fixed potential (ground potential) together with the connection block 9, the high-pressure cooling plate 5 and the casing 16 described later.

  On the main surface of the low-voltage electrode 1, a dielectric 2a is disposed. That is, one main surface of the dielectric 2 a is in contact with the main surface of the low-voltage electrode 1. A conductor is applied, printed, vapor-deposited, etc. on the one main surface of the dielectric 2a. In addition, a dielectric 2b is disposed facing the dielectric 2a, separated from the dielectric 2a by the discharge space 6. That is, the other main surface of the dielectric 2a faces the one main surface of the dielectric 2b with the discharge space 6 therebetween. Here, there are a plurality of spacers (not shown) between the dielectric 2a and the dielectric 2b, and the gaps in the discharge space 6 are held and fixed by the spacers. Note that the vertical dimension of the discharge space 6 in FIG. 2 is, for example, about 0.05 mm to several mm.

  The high voltage electrode 3 is disposed on the other main surface of the dielectric 2b. That is, one main surface of the high-voltage electrode 4 is in contact with the other main surface of the dielectric 2b. Note that a conductor is applied, printed, evaporated, or the like on the other main surface of the dielectric 2b. One main surface of the insulating plate 4 is in contact with the other main surface of the high-voltage electrode 3. Further, the high-pressure cooling plate 5 is in contact with the other main surface of the insulating plate 4.

  In the present embodiment, one example of a laminated configuration in which an insulating plate 4 and a high-pressure cooling plate 5 are provided is shown. However, it is of course possible to adopt a laminated structure in which the insulating plate 4 and the high-pressure cooling plate 5 are omitted.

  Here, the dielectric 2a coated with a conductor, the spacer 2 (not shown), and the dielectric 2b coated with a conductor can be integrated.

  As shown in FIG. 2, in each electrode cell, the low voltage electrode 1 and the high voltage electrode 3 face each other through the dielectrics 2 a and 2 b and the discharge space 6. That is, the dielectrics 2 a and 2 b are arranged on the main surface of the low voltage electrode 1 facing the discharge space 6 and the main surface of the high voltage electrode 3 facing the discharge space 6. Since the dielectric material is effective as a material having high resistance to sputtering and non-conductivity by discharging both surfaces of the discharge space 6, the present embodiment adopts a configuration in which both the dielectrics 2 a and 2 b are provided. Yes. Here, unlike the configuration of FIG. 2, only one of the dielectric 2a and the dielectric 2b can be omitted.

  As described above, the electrode cell having each configuration 1, 2a, 2b, 3, 4, 5 has a through hole PH formed in the stacking direction of each configuration. Here, the through-hole PH which each electrode cell has is connected in the lamination direction of an electrode cell, and the continuous through-hole is formed. In the present specification, the continuous through hole is referred to as a “through hole”. As can be seen from the above, the through-holes extend in the stacking direction.

  As shown in FIG. 2, in the present embodiment, one low voltage electrode 1 is a common component in the vertically adjacent electrode cells (the one low voltage electrode 1 is a common component). Are referred to as electrode cell pairs). This can reduce the number of parts by adopting a configuration in which the low voltage electrode 1 is commonly used in the electrode cell. If the purpose is not to reduce the number of parts, a configuration in which the low-voltage electrode 1 is not commonly used may be employed.

  In the configuration of FIG. 2, the structure of one electrode cell pair is disclosed, and a plurality of electrode cell pairs are stacked in the vertical direction of FIG. Each connecting block 9 is interposed between each low-voltage electrode 1 and each high-pressure cooling plate 5. That is, each connection block 9 exists on the side of each electrode cell. Due to the presence of the connection block 9, the dimensions from the low voltage electrode 1 to the high voltage cooling plate 5 can be kept constant in each electrode cell. Here, the connecting block 9 is not disposed on all sides of the electrode cell, but only on a part of the side of the electrode cell (left side of the sectional view of FIG. 2) as shown in FIG. It is arranged.

  Moreover, in the plasma generator 100, as shown in FIG. 2, the insulating cylinder part 21 is arrange | positioned inside the said through-hole. The insulating cylinder portion 21 has a cylindrical shape having a hollow portion 21A penetrating in the vertical direction of FIG. That is, the insulating cylinder part 21 is disposed in the through-hole so that the cylindrical axis direction of the insulating cylinder part 21 is parallel to the stacking direction of the electrode cells (more specifically, the through-holes of the through-holes). The axial direction coincides with the cylindrical axial direction of the insulating cylinder portion 21).

  In addition, a plurality of fine ejection holes (nozzle holes) 21 x are provided on the side surface portion of the insulating cylinder portion 21. Here, in the configuration example of FIG. 2, each ejection hole 21 x is provided in the insulating cylinder portion 21 so as to face the discharge space 6. Moreover, the opening diameter of each ejection hole 21x is larger than the extent that each charged particle generated in the discharge space 6 can pass through. For example, it is desirable that the opening diameter of each ejection hole 21x is larger than the vertical dimension of the discharge space 6 in FIGS. Here, the insulating cylinder part 21 is made of quartz or alumina.

  In the above, the form which comprises the insulating cylinder part 21 with the insulating cylinder which provided the one some fine jet hole 21x is mentioned. However, a configuration in which the insulating cylinder portion 21 is configured by stacking a ring-shaped insulating cylinder provided with a plurality of fine ejection holes 21x on the through-hole PH may be employed.

  In addition, in terms of setting a desired pressure difference between the discharge space 6 and the cavity portion 21A, the ejection hole 21x has a hole diameter of 0.05 mm to 0.3 mm and a hole length (the thickness of the insulating cylinder portion 21 can be grasped. ) It is desirable that it is about 0.3 mm to 3 mm.

  Further, as shown in FIG. 2, the inner peripheral side surface portion of the through communication hole and the outer peripheral side surface portion of the insulating cylinder portion 21 are separated by a predetermined distance. That is, as shown in FIG. 2, a pipe line 22 is provided between the side surface portion of the through hole PH (or the through hole) of the electrode cell and the side surface portion of the insulating cylinder portion 21. When the said pipe line 22 is seen from the up-down direction of FIG. 2, it has an annular shape. That is, the side surface portion of the through hole PH (or the through hole) of the electrode cell in plan view is the outer periphery, the side surface portion of the insulating cylinder portion 21 in plan view is the inner periphery, and the gap between the outer periphery and the inner periphery is An annular pipe line 22 in plan view is obtained.

  Here, the said duct 22 is connected with each discharge space 6 in the said outer peripheral side. And the end part side of the said pipe line 22 passes through the inside of the upper surface of the housing 16, and is connected to the below-mentioned automatic pressure controller (Auto Pressure Controller: APC) 26 which exists in the exterior of the said housing 16 (FIG. 1).

  Moreover, the high voltage | pressure cooling plate 5, the high voltage electrode 3, and the low voltage electrode 1 are conductors. And the insulator 5a is formed in the part which faces the insulation cylinder part 21 of the high voltage | pressure cooling plate 5. As shown in FIG. In addition, an insulator 3 a is formed on the portion of the high-voltage electrode 3 that faces the insulating cylinder portion 21. In addition, an insulator 1 a is formed on the portion of the low-voltage electrode 1 that faces the insulating cylinder portion 21.

  That is, in each electrode cell, the part facing the insulating cylinder portion 21 is made of an insulating material, including the members 4, 2a, and 2b. As described above, the inner surface of the pipe line 22 formed in the through communication hole of each electrode cell has an insulating property. Thereby, discharge (abnormal discharge) other than the discharge space 6 in the pipeline 22 is prevented.

  1 and 2, a flow path (not shown) through which a refrigerant passes is formed in each connection block 9 stacked in the vertical direction in FIGS. 1 and 2, and the inside of each high-pressure cooling plate 5 and the low-pressure electrode 1. A flow path (not shown) is also formed inside. The refrigerant supplied from the outside flows through the flow path in the connection block 9, circulates through the flow path in each high-pressure cooling plate 5 and the flow path in each low-voltage electrode 1, and the other flow paths in the connection block 9. And output to the outside.

  When the refrigerant adjusted to a constant temperature flows through the flow path in the high-pressure cooling plate 5, the high-voltage electrode 3 is cooled to a constant temperature via the insulating plate 4. In addition, the refrigerant adjusted to a constant temperature flows through the flow path in the low-pressure electrode 1 so that the low-pressure electrode 1 itself is cooled and maintained at a constant temperature, and the gas temperature in the discharge space 6 is also indirectly maintained at a constant temperature. can do. Note that the temperature of the refrigerant is adjusted to a constant temperature in the range of, for example, about several degrees C. to 25 degrees C.

  In addition, according to the type of gas supplied to the discharge space 6, a liquid whose temperature is adjusted at a constant temperature in the relatively high temperature range (for example, about 100 ° C. to 200 ° C.) is used instead of the refrigerant. You may do it. The liquid supplied from the outside flows in the flow path in the connection block 9, circulates in the flow path in each high-pressure cooling plate 5 and the flow path in each low-voltage electrode 1, and flows in the other flow in the connection block 9. It is output to the outside via the road.

  As the liquid adjusted to a constant temperature flows through the flow paths in each connection block 9 and the low-pressure electrode 1, each connection block 9 and the low-pressure electrode 1 are held at a constant temperature. The gas temperature in the discharge space 6 is indirectly maintained at a constant temperature.

  Further, in the plasma generating apparatus 100 according to the present invention, a conduit 75 for supplying the source gas to the discharge space 6 is provided. Here, the pipe line 75 is directly connected to the discharge space 6 from the outside of the casing 16 without being connected to the space inside the casing 16 in which no electrode cell is disposed. That is, the gas flowing in the duct 75 is not supplied to the outer peripheral region of the electrode cell inside the housing 16 but is directly supplied to each discharge space 6 of each electrode cell.

  As shown in FIGS. 1 and 2, the pipe line 75 extends from the upper part of the housing 16 into each connection block 9. In each low voltage electrode 1, the pipe 75 is branched, and the pipe 75 is disposed inside each low voltage electrode 1.

  Here, the pipe line 75 has a buffer part 75a. The buffer portion 75a is arranged so as to go around each low-voltage electrode 1. Further, the dimension in the stacking direction of the buffer portion 75 a is larger than the dimension in the stacking direction of the other part of the pipe line 75 disposed in the low voltage electrode 1.

  Moreover, the pipe line 75 has the jet nozzle 75b. The jet port 75b penetrates the low voltage electrode 1 and each dielectric 2a in contact with the low voltage electrode 1. Each ejection port 75b is connected to each discharge space 6 of each electrode cell. In addition, as shown in FIG. 2, the buffer part 75a and the jet nozzle 75b are connected by the pipe line 75. As shown in FIG.

  Here, the planar view shape of each low-voltage electrode 1 and each dielectric 2a is circular. A plurality of the ejection openings 75b are arranged in each low voltage electrode 1 and each dielectric 2a along the circumferential direction of the circle. In addition, as for the space | interval of each jet nozzle 75b arrange | positioned along the circumferential direction, it is desirable that it is constant. In addition, each spout 75b faces the discharge space 6, but is disposed as much as possible outside the discharge space 6 (that is, on the outer peripheral side of the electrode cell that is the non-existing side of the insulating cylinder portion 21). Is desirable. As a result, the active gas, the metal precursor gas, and the like are evenly discharged into each discharge space 6 from the jet outlet 75b, and each of the discharged gases travels from the outer periphery of the discharge surface to the inside (insulating tube portion 21 side). Is propagated in the reverse radial direction.

  Needless to say, each of the spouts 75b disposed along the circumferential direction is connected to each of the low voltage electrodes 1 via a pipe 75 with a buffer portion 75a disposed in a circular shape. ing.

  The conduit 75 having the above-described configuration is connected to a gas MFC (Mass Flow Controller) 76 disposed outside the housing 16.

  As can be seen from the above configuration of the pipe line 75, various gases output from the gas MFC 76 are input from the upper part of the housing 16, propagated through the connection blocks 9, branched at the low-pressure electrodes 1, and each low-pressure electrode. Propagating within 1. Then, after the gas is filled in the buffer portion 75 a, the gas is supplied from the ejection port 75 b to each discharge space 6 without being in contact with the outer peripheral region of the electrode cell in the housing 16.

  Here, the flow path through which the refrigerant (temperature-adjusted liquid) passes and the pipe line 76 are separate independent paths.

  An inner surface (inner wall) of a pipe 75 (including 75a and 75b) for supplying the raw material gas directly from the outside of the housing 16 to the discharge space 6 without contacting the space inside the housing 16 where no electrode cell is disposed. A passive film that does not cause corrosion or the like due to a chemical reaction with an active gas, or a platinum film or a gold film that is strong in chemical reactivity is formed.

  In order to ensure the airtightness of each flow path and the pipe 75, the connection part between the connection block 9 and the high-pressure cooling plate 5 and the connection part between the connection block 9 and the low-pressure electrode 1 are airtight such as an O-ring. Means are provided.

  As shown in FIG. 1, the plasma generation apparatus 100 includes a housing 16. The casing 16 is made of, for example, aluminum or SUS. And it arrange | positions in the state in which the several electrode cell was laminated | stacked inside the housing | casing 16 by which internal airtightness was ensured. That is, each electrode cell in the stacked state is covered with the upper and lower surfaces and side surfaces of the housing 16. There is a space between the side surface of the housing 16 and the side surface of each electrode cell. A space also exists between the bottom surface of the housing 16 and the lowermost part of each electrode cell. As shown in FIG. 1, the stacked electrode cells are fixed to the upper surface of the housing 16 using a fastening member 8.

  The plasma generating apparatus 100 includes the AC power source 17 shown in FIG. 2, and as shown in FIG. 1, the AC power source 17 includes an inverter 17a and a high-voltage transformer 17b.

  In the inverter 17a, frequency conversion processing is performed on the input 60 Hz AC voltage, and is output to the high voltage transformer 17b as a 15 kHz AC voltage. In the high-voltage transformer 17b, the boosting process is performed on the input AC voltage of 200 to 300V, and an AC voltage of several kV to several tens of kV is output.

  One end of the high-voltage transformer 17 b is connected to each high-voltage electrode 3 via the electric supply terminal 15. On the other hand, the other end of the high-voltage transformer 17 b is connected to the housing 16. The housing 16, the high-pressure cooling plate 5, the connecting block 9, and the low-voltage electrode 1 are electrically connected and set to a fixed potential (ground potential). As can be seen from the configuration of FIG. 2, the high-pressure cooling plate 5 and the high-voltage electrode 3 are electrically insulated by the insulating plate 4.

  As shown in FIG. 1, the plasma generating apparatus 100 includes a gas supply unit 20, a gas MFC 24, and a sub gas MFC 25. Furthermore, as described above, the plasma generator 100 also includes the gas MFC 76.

  In the present embodiment, the active gas is output as the source gas from the gas MFC 76. An active gas such as ozone gas, ammonia gas or nitrogen oxide gas is output from the gas MFC 76 toward the pipe line 75 in accordance with the processing on the material 18 to be processed placed in the CVD chamber 200. Note that the active gas may be supplied together with the inert gas.

  In the present embodiment, the gas MFC 76 outputs a metal precursor (precursor) gas for obtaining a metal functional material particle gas (high-functional insulating film) such as nitriding or oxidation as a source gas. good. A metal precursor gas obtained by vaporizing a metal such as hafnium may be output from the gas MFC 76 toward the pipe 75. Moreover, you may supply metal precursor gas with an inert gas.

  The gas supply unit 20 is provided on the side surface of the housing 16. The gas supply unit 20 supplies a predetermined gas into the housing 16 from the outside of the housing 16. Specifically, the predetermined gas passes through the gas supply unit 20 and is supplied to the outer peripheral portion of the electrode cell (that is, the region where the stacked electrode cell is not disposed in the housing 16).

  From the gas MFC 24, nitrogen gas, oxygen gas, and inert gas are supplied as source gases, and from the sub-gas MFC 25, a rare gas (such as helium gas or argon gas) is supplied. As shown in FIG. 1, the raw material gas and the rare gas are mixed in the pipeline on the way. The source gas and the rare gas are input to the gas supply unit 20.

  Here, the gas MFC 24 may supply the raw material gas into the housing 16 for the reaction in the discharge space 6, or may supply the predetermined gas as the carrier gas into the housing 16. .

  In the present embodiment, the gas supply unit 20 supplies the raw material gas together with the rare gas into the housing 16, but may supply only the raw material gas to the housing 16.

  Further, as shown in FIG. 1, the plasma generator 100 includes an automatic pressure control device 26. As described above, the automatic pressure control device 26 is connected to the pipe line 22 shown in FIG. Furthermore, as described above, the outer peripheral side surface of the annular conduit 22 is connected to the discharge space 6. With this configuration, each discharge space 6 is held at a constant pressure by the automatic pressure control device 26 via the conduit 22. For example, the pressure is kept constant in each discharge space 6 within the pressure range of 0.03 MPa (megapascal) to 0.3 MPa by the automatic pressure control device 26.

  Furthermore, in the present embodiment, the plasma generator 100 includes a decompressor 27. In the configuration of FIG. 1, the decompression device 27 is connected to the cavity portion 21 </ b> A of the insulating cylinder portion 21 via the CVD chamber 200. For example, a vacuum pump can be used as the decompression device 27. With this configuration, the decompression device 27 can reduce the pressure in the hollow portion 21A of the insulating cylinder portion 21 to a pressure lower than the atmospheric pressure (for example, 1 to 5000 Pa (pascal)). In the configuration example of FIG. 1, as described above, the pressure reducing device 27 is also connected to the CVD chamber 200, so that the pressure inside the CVD chamber 200 is reduced to, for example, about 1 to 5000 Pa by the pressure reducing device 27. Is done.

  In the plasma generator 100 configured as described above, the end of the insulating cylinder portion 21 is connected to the upper surface of the CVD chamber 200 (the surface facing the processing surface of the workpiece 18) via the two gas output flanges 14b and 14c. (See FIG. 1). That is, the gas output flanges 14 b and 14 c serve as a joint between the cavity portion 21 </ b> A of the insulating cylinder portion 21 and the inside of the CVD chamber 200. As can be seen from the configuration, the gas or the like in the hollow portion 21A of the insulating cylinder portion 21 can be supplied into the CVD chamber 200 via the gas output flanges 14b and 14c (the flow of the gas is reduced by the decompression device 27). Can be generated by the suction force of

  In the reaction chamber inside the CVD chamber 200, a processing object 18 such as a semiconductor wafer is placed. In the CVD chamber 200, the workpiece 18 is exposed by the gas propagated from the hollow portion 21 </ b> A of the insulating cylinder portion 21. Thereby, a desired high function film can be formed on the surface of the material 18 to be processed.

  Further, an exhaust gas output port 30 is provided in the side surface portion of the CVD chamber 200, and the exhaust gas output port 30 is further connected to the decompression device 27. The decompression device 27 decompresses the inside of the hollow portion 21 </ b> A of the insulating cylinder portion 21 and the inside of the CVD chamber 200. Further, by the decompression operation, a flow of gas, particles, and the like is generated in the order of the cavity 21A of the insulating cylinder portion 21 → the gas output flanges 14b and 14c → the CVD chamber 200 → the exhaust gas output port 30 → the decompression device 27. You can also

  Moreover, the plasma generator 100 according to the present invention further includes a carrier gas supply unit 201 as shown in FIG. The carrier gas supply unit 201 is connected to the cavity portion 21A of the insulating cylinder portion 21, and supplies the carrier gas from the outside of the housing 16 into the cavity portion 21A. The carrier gas supply unit 201 includes a supply pipeline 201A and a flange portion 201B.

  As shown in FIG. 1, the insulating cylinder portion 21 is disposed so as to penetrate the fastening member 8 and also penetrate the lower surface of the housing 16. Here, between the fastening member 8 and the lower surface of the housing 16, the insulating cylinder portion 21 is exposed to the space in the housing 16, and the ejection hole 21 x is formed in the exposed insulating cylinder portion 21. It has not been.

  As described above, the end portion side of the insulating cylinder portion 21 is exposed from the lower surface of the casing 16 (that is, the cavity portion 21A of the insulating cylinder portion 21 faces the lower surface outside the casing 16). The flange portion 201B is fixed to the lower surface of the casing 16 on the outer side of the casing 16 so as to be connected to the hollow portion 21A.

  In addition, a supply pipe line 201A is connected to the side surface of the flange part 201B, and a carrier gas such as an inert gas is supplied from the supply pipe line 201A. The carrier gas supplied from the supply pipeline 201A is supplied to the hollow portion 21A of the insulating cylinder portion 21 through the flange portion 201B.

  In addition, the plasma generating apparatus 100 according to the present invention includes a conductive member 42 as shown in FIG. The conductive member 42 is disposed in the hollow portion 21 </ b> A of the insulating cylinder portion 21. That is, the side surface of the conductive member 42 is surrounded by the insulating cylinder portion 21 while being separated by a predetermined space.

  The conductive member 42 is disposed along the extending direction of the cavity portion 21 of the insulating cylinder portion 21. Further, as shown in FIG. 1, the conductive member 42 is disposed over almost the entire area of the cavity 21A in the stacking direction of the electrode cells, and the conductive surfaces 42 are disposed on the opening surfaces of all the ejection holes 21x. The sex member 42 faces.

  Here, the conductive member 42 has a rod shape, and the conductive member 42 is made of metal or semiconductor such as hafnium, silicon, and titanium. That is, here, the semiconductor is an element that has metallic electrical conduction but has an electrical resistance larger than that of a normal metal.

  As shown in FIG. 1, the decompression device 27 and the automatic pressure control device 26 are connected to an exhaust gas decomposition processing device 28. Therefore, the gas output from the decompression device 27 and the automatic pressure control device 26 is decomposed by the exhaust gas decomposition processing device 28. The decomposed gas is exhausted from the exhaust gas decomposition processing device 28 as a processing gas 301.

  Next, the operation of CVD apparatus 300 according to the present embodiment including the operation of plasma generation apparatus 100 will be described.

  In FIG. 1, a raw material gas such as an active gas is supplied from a gas MFC 76. The supplied source gas is input to the pipe line 75, passes through the pipe line 75, and is directly supplied to each discharge space 6 (that is, without contacting any space other than the discharge space 6 in the housing 16. The source gas is supplied to the discharge space 6).

  Further, from the gas MFC 24, a gas that functions as a source gas or a carrier gas contributing to the reaction in the discharge space 6 is supplied, and from the sub gas MFC 25, a rare gas is supplied. The supplied raw material gas and the like and the rare gas are mixed and mixed before being input to the gas supply unit 20. Then, the mixed gas is supplied from the gas supply unit 20 to the inside of the casing 16 of the plasma generating apparatus 100 (that is, a region in which no stacked electrode cells are disposed in the casing 16).

  The supplied mixed gas fills the housing 16. The mixed gas filled in the housing 16 enters each discharge space 6 formed in each electrode cell from the outer peripheral direction of the electrode cell having a circular outer shape in plan view.

  On the other hand, as shown in FIG. 2, a high-frequency AC voltage from an AC power source 17 is applied between the high-voltage electrode 3 and the low-voltage electrode 1 in each electrode cell. By applying the AC voltage to the electrodes 1 and 3, dielectric barrier discharge (silent discharge) composed of high-frequency plasma is uniformly generated in each discharge space 6 in each electrode cell under a constant pressure near atmospheric pressure.

  In each discharge space 6 where the dielectric barrier discharge is generated, the source gas or the like is supplied as described above. Then, a discharge dissociation reaction of the feed gas occurs in each discharge space 6 due to the dielectric barrier discharge.

  For example, an active gas such as ozone gas, ammonia gas, or nitrogen oxide gas is supplied as a source gas via a pipe 75, and an inert gas such as oxygen or nitrogen is supplied as a source gas via a gas supply unit 20. Is supplied.

  In this case, a large amount of high-density plasma excited dissociated by the discharge from the supplied inert gas such as oxygen or nitrogen or active gas such as ozone or ammonia gas due to the dielectric barrier discharge in the discharge space 6. Gas is generated. Since the active gas is supplied as the raw material gas via the pipe line 75, it is more easily dissociated by the discharge into the plasma excitation gas than the inert gas such as oxygen or nitrogen, and as a result, a large amount of high-concentration plasma is obtained. Excited gas is generated. Therefore, a high concentration of active gas can be exposed to the material 18 to be processed.

  Now, each discharge space 6 is maintained at a constant pressure Pa by the automatic pressure control device 26, and on the other hand, the pressure Pb in the hollow portion 21 </ b> A of the insulating cylinder portion 21 is reduced by the decompression device 27 such as a vacuum pump. The pressure is set smaller than the pressure Pa in the discharge space 6 (Pa> Pb).

  For example, the pressure Pa in the discharge space 6 is set to near atmospheric pressure (100 kPa), and the pressure Pb in the hollow portion 21A of the insulating cylinder portion 21 is set to a vacuum pressure of 40 kPa (about 300 Torr) or less.

  Thus, since the pressure Pb in the cavity portion 21A is reduced to a pressure lower than the atmospheric pressure by the decompression device 27, the discharge space 6 and the cavity portion 21A via the fine ejection holes 21x of the insulating cylinder portion 21 are reduced. In the meantime, a pressure difference (Pa-Pb) is generated. Therefore, from the ejection hole 21x, it is possible to generate a flow of gas ejection from the discharge space 6 to the cavity portion 21A due to the pressure difference.

  Therefore, by adopting a configuration in which the fine injection hole 21x is provided in the wall of the thin insulating cylinder portion 21 and the pressure difference (Pa−Pb) is employed, the plasma excitation gas generated in each discharge space 6 is The contact time between the wall of the ejection hole 21x through which the plasma excitation gas passes and the plasma excitation gas can be made very short, and the contact area with the gas in the ejection hole 21x can be minimized.

  Moreover, in the ejection hole 21x of the nozzle strip, the plasma excitation gas is ejected into the cavity 21A by utilizing the adiabatic expansion effect. Therefore, the amount of attenuation due to the collision between the inner wall of the ejection hole 21x and the plasma excitation gas and the amount of attenuation due to heat generation can be suppressed as much as possible, and the plasma excitation gas in which the attenuation amount is suppressed can be led to the cavity 21A at high speed.

  That is, each gas supplied into the discharge space 6 of the electrode cell having a circular shape in plan view proceeds in a reverse radial direction toward the center of the electrode cell, and is exposed to a dielectric barrier discharge during the progress. Plasma excitation gas is generated, and the generated plasma excitation gas is jetted into the cavity 21A of the insulating cylinder 21 that is the central part of the electrode cell while suppressing the attenuation as much as possible. Join at.

  Further, in the cavity portion 21A, the pressure is reduced to a vacuum level effective for film formation. And the plasma excitation gas which ejected from the several ejection hole 21x merges in the said cavity part 21A. For this reason, the plasma excitation gas attenuation amount by the said confluence can suppress the collision between gas particles very much rather than the confluence in air | atmosphere. That is, it is possible to suppress the attenuation amount of the plasma excitation gas by several stages.

  On the other hand, as described above, the conductive member 42 containing the metal functional material is disposed in the hollow portion 21A of the insulating cylinder portion 21. Therefore, the plasma excitation gas output into the cavity 21A through the ejection hole 21x collides with and contacts the conductive member 42 at a high speed in the cavity 21A. As described above, when the plasma excitation gas collides with and comes into contact with the conductive member 42 (that is, by sputtering with respect to the conductive member 42), the metal material of the conductive member 42 is evaporated and gasified into fine particles (metal particle gas). . A large amount of functional metal particle gas such as nitridation and oxidation is generated by the chemical reaction between the plasma excitation gas and the metal particle gas.

  By changing the material of the conductive member 42, various metal functional material particle gases can be generated in the cavity 21A through the series of reactions (sputtering + chemical reaction).

  Each metal functional material particle gas generated in the hollow portion 21A rides on the carrier gas supplied into the hollow portion 21A from the carrier gas supply portion 201, and by the suction force of the decompression device 27, the hollow portion 21A and the gas It is discharged into the CVD chamber 200 through the output flanges 14b and 14c.

  As described above, the material 18 to be processed is placed in the CVD chamber 200. Accordingly, the metal functional material particle gas generated is exposed to the material 18 to be processed, and high-functional insulating films such as oxidation or nitridation of various metal functional material particles are formed on the material 18 to be processed. Is done.

  As can be seen from the above description, the combination of the plasma generator 100 and the CVD chamber 200 generates a large amount of metal functional material particle gas, which is a highly effective remote plasma type composition. A film processing apparatus (remote plasma type CVD apparatus) is configured.

  Next, the effect of the invention according to the present embodiment will be described.

  In the plasma generator 100 according to the present embodiment, the plasma excitation gas ejected from the ejection hole 21x of the insulating cylinder portion 21 and the conductive member 42 in the cavity portion 21A of the insulating cylinder portion 21 by the configuration described above. It can collide (contact) at high speed. When the plasma excitation gas collides with the conductive member 42 at a high speed (that is, by sputtering of the conductive member 42 by the plasma excitation gas), the metal substance particles are evaporated from the surface of the conductive member 42. Then, a metal functional material particle gas such as nitridation or oxidation is generated by a chemical reaction between the metal material particles and the plasma excitation gas. That is, the plasma generating apparatus 100 can generate the metal functional material particle gas and supply the generated metal functional material particle gas to the CVD chamber 200 via the insulating cylinder portion 21.

  Further, in plasma generating apparatus 100 according to the present embodiment, pressure difference ΔP (= Pa−Pb) is generated between discharge space 6 and cavity portion 21A. Therefore, by the pressure difference ΔP, the generated plasma excitation gas can be ejected at a high speed through the ejection port 21x into the vacuum cavity 21A of the insulating cylinder 21 existing in the central region of the electrode cell. .

  Therefore, it is possible to suppress collision of the plasma excitation gases between the discharge space 6 and the hollow portion 21A, and to prevent the plasma excitation gas from colliding with a wall or the like. Therefore, the amount of attenuation due to various collisions of the plasma excitation gas can be suppressed, and the plasma excitation gas can be taken out into the cavity 21A more efficiently.

  In the invention according to the present embodiment, the pressure in the hollow portion 21A of the insulating cylinder portion 21 can be set to a vacuum state of 40 kPa (300 Torr) or less by the decompression device 27. Therefore, the plasma excitation gas ejected into the hollow portion 21A in the vacuum state is guided to the conductive member 42 while colliding with the conductive member 42 while suppressing the collision between the plasma excitation gases. . Due to the collision, a metal fine particle gas sputtered from the conductive member 42 is generated, and the plasma excitation gas causes a chemical reaction with the metal fine particle gas. The gas in the form of gaseous functional metal particles generated by the chemical reaction is supplied into the CVD chamber 200. Therefore, the amount of attenuation due to the collision between the plasma excitation gases can be reduced, the plasma excitation gas can be maintained at a high concentration and a large flow rate, and an effective chemical reaction with the metal substance particles can be promoted.

  In the invention according to the present embodiment, the plasma excitation gas is generated in the electrode cell using dielectric barrier discharge. In the invention according to the present embodiment, a method is employed in which the generated plasma excitation gas is discharged from the ejection hole 21x having the pressure loss ΔP to the vacuum cavity 21A.

  For this reason, the discharge space 6 in the housing 16 of the plasma generating apparatus 100 can realize a discharge maintaining the atmospheric pressure. Thus, the invention according to the present embodiment can generate a large amount of high-concentration plasma excitation gas with the plasma generator 100 having a simple configuration, while suppressing the attenuation amount of the generated plasma excitation gas. , And supplied to the cavity 21A in a vacuum state. Therefore, as a result, a large amount of plasma excitation gas with a high concentration can be output into the cavity 21A.

  Further, in plasma generating apparatus 100 according to the present embodiment, source gas is supplied directly from the outside of casing 16 to each discharge space 6 without being connected to the space inside casing 16 in which no electrode cell is disposed. The pipe line 75 is provided.

  Therefore, the source gas can be directly supplied into each discharge space 6 without contacting the space in the casing 16 other than the discharge space 6 via the duct 75. Therefore, an active gas, a metal precursor gas, or the like can be supplied to the discharge space 6 from the gas supply unit 20 as a source gas to the pipe line 75 separately from the inert gas.

  Usually, when an active gas or a metal precursor gas is used as a source gas, a large amount of effective plasma excitation gas can be generated by dielectric barrier discharge. However, the peripheral parts other than the discharge part in the apparatus deteriorated due to corrosion or the like, and metal precursor particles were deposited, and the life of the apparatus was shortened and could not be realized.

  In the invention according to the present embodiment, the raw material gas is directly supplied into each discharge space 6 without contacting the space in the casing 16 other than the discharge space 6 via the pipe line 75. Thereby, it can prevent that active gas contacts components, such as an electrode of an electrode cell, and can prevent the corrosion of the electrode part by the said active gas. Further, since the metal precursor gas is directly supplied to the discharge space 6, it is possible to prevent deposits due to the metal precursor gas from being generated in the space inside the casing 16 other than the discharge space 6.

  As described above, in the plasma apparatus 100 according to the present invention, the active gas or the metal precursor gas capable of generating a large amount of plasma excitation gas by dielectric barrier discharge without causing the above-described problems such as corrosion and deposits, It can be supplied as a raw material gas.

  In addition, it is desirable that the inner wall of the pipe 75 (including reference numerals 75a and 75b) is subjected to a corrosion-resistant passive film treatment so that the pipe surface supplying the activated gas does not corrode. In addition, a temperature adjusting unit that adjusts and maintains the temperature in the pipe 75 (including the signs 75a and 75b) is provided so that the metal precursor gas does not condense in the pipe 75 (including the signs 75a and 75b). desirable. For example, a flow path through which the temperature-controlled liquid flows is provided in the connection block 9 and the low voltage electrode 1.

  The present invention also provides a remote plasma type film forming apparatus. That is, the plasma generation apparatus 100 that generates plasma excitation gas from the source gas and the CVD chamber 200 that performs film formation on the material 18 to be processed using the generated plasma excitation gas are independent apparatuses. .

  Thus, since the plasma generation source and the film formation processing region are completely separated, charged particles such as ions and electrons generated by ionization in the plasma source are processed material 18 arranged in the processing region. Can be prevented from colliding. As a result, only a large amount of high-concentration plasma excitation gas or metal functional substance particle gas such as nitriding or oxidizing can be brought into contact with the material 18 to be processed. Thereby, the plasma damage to the material 18 can be completely eliminated, and the film can be formed efficiently. Furthermore, in the CVD chamber 200, plasma CVD processing is performed by supplying only a large amount of high-concentration plasma excitation gas or metal functional material particle gas such as nitriding or oxidizing. Therefore, the film formation time for the material 18 can be shortened.

  Further, in the plasma generator 100 according to the present embodiment, each discharge space 6 is automatically pressure controlled via a pipe line 22 existing between the insulating cylinder portion 21 and the outlet side end portion of each discharge space 6. It is connected to the device 26. The automatic pressure control device 26 controls the pressure in each discharge space 6 to be constant near atmospheric pressure.

  Therefore, the plasma generator 100 easily manages the pressure in each discharge space 6 to a constant value. Can be held. As described above, since the plasma generator 100 is configured to be able to manage the pressure in the discharge space 6 to a desired pressure, it is easily managed, set, and maintained so that the generation performance of the generated plasma excitation gas is optimized. be able to. In the plasma generator 100, dielectric barrier discharge can be generated with the pressure in each discharge space 6 kept constant. Therefore, in each discharge space 6, plasma excitation gas with uniform excitation levels is generated. As a result, a higher-quality high-performance film is formed on the material 18 to be processed in the CVD chamber 200.

  In plasma generating apparatus 100 according to the present embodiment, a flow path through which a temperature-controlled refrigerant having a constant temperature flows is formed in low-pressure electrode 1.

  Therefore, the heat generated in the electrode cell by the dielectric barrier discharge can be dissipated through the refrigerant, and the low voltage electrode 1 itself can be easily managed and maintained at a constant temperature. Furthermore, due to the low voltage electrode 1 being held at a constant temperature, the temperature in each discharge space 6 can be easily managed and held at a constant temperature. For example, the temperature in each discharge space 6 is managed and set so that the generation performance of the plasma excitation gas is optimized. In the plasma generator 100, dielectric barrier discharge can be generated in a state where the temperature in each discharge space 6 is constant. Therefore, in each discharge space 6, plasma excitation gas with uniform excitation levels is generated. As a result, a higher-quality high-performance film is formed on the material 18 to be processed in the CVD chamber 200.

  In addition, the plasma generator 100 according to the present embodiment includes not only the gas MFC 24 but also the sub-gas MFC 25 that outputs a rare gas. The source gas and the rare gas are mixed and supplied from the gas supply unit 20 into the housing 16.

  Therefore, even if various mixed gases are used as the source gas, there is an effect that the plasma excitation gas by the dielectric barrier discharge can be efficiently generated, and it becomes easy to obtain a wider variety of metal functional substance particle gases. Further, the rare gas is also guided to the vacuum pressure cavity 21 </ b> A through the discharge space 6. Therefore, in the movement path of the plasma excitation gas including the cavity portion 21A and reaching the cavity portion 21A, the attenuation of the active species due to the collision between the plasma excitation gases is suppressed by the rare gas. Therefore, the concentration and gas flow rate of the plasma excitation gas can be increased. That is, the plasma excitation gas can be efficiently taken out into the insulating cylinder portion 21.

  In plasma generating apparatus 100 according to the present embodiment, there are a plurality of electrode cells, and each electrode cell is stacked in the facing direction. And the said through-hole extended in the lamination direction is comprised in the center area | region of the said electrode cell by lamination | stacking of the said electrode cell. Moreover, the said insulation cylinder part 21 extended in the said lamination direction is arrange | positioned in the said through-hole.

  Therefore, plasma excitation gas can be generated from the plurality of electrode cells, and the generated plasma excitation gas can be merged in the cavity portion 21 </ b> A in the insulating cylinder portion 21. Therefore, a large flow rate of plasma excitation gas can be taken out from the hollow portion 21A. Since the electrode cells are stacked in the vertical direction in FIGS. 1 and 2, the generation amount of the plasma excitation gas can be greatly increased without increasing the area occupied by the plasma generator 100.

  A shower plate may be provided on the end side of the insulating cylinder portion 21. More specifically, the gas output flange 14c shown in FIG. 1 connected to the CVD chamber 200 side may have the configuration shown in the enlarged perspective view of FIG.

  As shown in FIG. 3, the gas output flange 14c is provided with a shower plate 14S. Here, a plurality of ejection holes 14t are formed in the shower plate 14S.

  The metal functional material particle gas generated in the plasma generator 100 is jetted into the cavity 21A of the insulating cylinder part 21, passes through the cavity 21A and the gas output flange 14b on the plasma generator 100 side, and reaches the CVD chamber 200 side. The gas output flange 14c is reached.

  On the other hand, a large-capacity buffer chamber is provided in the gas output flange 14c adjacent to the shower plate 14S. That is, in FIG. 3, the upper surface of the buffer chamber is the shower plate 14S.

  The metal functional substance particle gas that has reached the gas output flange 14c once fills the large-capacity buffer chamber in the gas output flange 14c. Then, the metal functional material particle gas is supplied from the buffer chamber into the CVD chamber 200 through the plurality of ejection holes 14t provided in the shower plate 14S.

  By adopting the gas output flange 14c having the configuration shown in FIG. 3, the metal functional material particle gas can be uniformly supplied from the respective ejection holes 14t of the shower plate 14S into the CVD chamber 200. Therefore, even if the large-area workpiece 18 is placed in the CVD chamber 200, the metal functional material particle gas is uniformly exposed (spouted) to the surface of the large-area workpiece 18. Can do. Due to the ejection of the uniform metal functional substance particle gas, a uniform and high-quality insulating film having a high quality is formed on the surface of the material 18 to be processed having a large area.

<Embodiment 2>
In addition to the configuration of the first embodiment, the plasma generator 100 according to the present embodiment includes a conductive film 43, a conductive member 42, and a conductive film formed on the wall surface of the hollow portion 21A of the insulating cylinder portion 21. 43, and a voltage applicator 44 for applying a voltage between them. In the following description, the description of the configuration common to the plasma generator 100 according to Embodiment 1 is omitted, and the configuration newly added in the present embodiment is described.

  FIG. 4 is an enlarged cross-sectional view showing a configuration and the like inside the insulating cylinder portion 21 of the plasma generator according to the present embodiment. Here, in the configuration shown in FIG. 4, in order to simplify the drawing, the configuration around the insulating cylinder portion 21 (each electrode 1, 3, dielectrics 2 a and 2 b, discharge space 6, insulators 1 a, 3 a, 5 a, The configuration of the high-pressure cooling plate 5 and the insulating plate 4 is not shown.

  As shown in FIG. 4, a conductive film 43 is formed on the inner wall surface of the hollow portion 21 </ b> A of the insulating cylinder portion 21 (see the thick sandy portion). As the conductive film 43, for example, gold, silver, aluminum, molybdenum, tantalum, or the like can be employed. The conductive film 43 can be formed on the inner wall surface of the insulating cylinder portion 21 by a method such as coating, vapor deposition, or printing.

  Furthermore, as shown in FIG. 4, a voltage applicator 44 is provided. The voltage applicator 44 applies a voltage between the conductive member 42 and the conductive film 43. Here, the voltage applicator 44 applies a DC voltage of about 1 kV, for example. In the configuration example shown in FIG. 4, the “+” polarity is applied to the conductive member 42 and the “−” polarity is applied to the conductive film 43, but the opposite is also possible. In other words, the “−” polarity may be applied to the conductive member 42, and the “+” polarity may be applied to the conductive film 43.

  In the discharge space 6 of the plasma generator, charged particles are generated by the discharge together with the plasma excitation gas by a reaction using plasma. In addition to the plasma excitation gas passing through the ejection hole 21x formed in the insulating cylinder portion 21, a part of the charged particles also pass through.

  As described above, in the plasma generating apparatus according to the present embodiment, between the conductive member 42 disposed in the insulating cylinder portion 21 and the conductive film 43 formed on the inner wall surface of the insulating cylinder portion 21. In addition, a voltage can be applied. Then, some of the charged particles that have passed through the ejection holes 21x are accelerated by the electric field generated by the voltage application, and collide with the conductive film 43 at a high speed.

  Therefore, a part of the charged particles generated in the discharge space 6 is accelerated in the electric field toward the conductive member 42 in the insulating cylinder portion 21, and the surface of the conductive member 42 is sputtered. Due to the sputtering, a fine particle gas is generated from the conductive member 42. Then, the fine particle gas and the plasma excitation gas come into contact with each other inside the insulating cylinder portion 21, and a chemical reaction occurs, and a metal functional substance particle gas such as nitriding or oxidizing is generated by the chemical reaction. As described above, in the present embodiment, by performing sputtering of the conductive member 42, the generation of the metal functional material particle gas in the insulating cylinder portion 21 can be promoted as compared with the configuration of the first embodiment. .

  When the “+” polarity is applied to the conductive member 42 and the “−” polarity is applied to the conductive film 43, the electrons are accelerated toward the conductive member 42. On the other hand, when the “−” polarity is applied to the conductive member 42 and the “+” polarity is applied to the conductive film 43, positive ions accelerate the electric field toward the conductive member 42.

DESCRIPTION OF SYMBOLS 1 Low voltage electrode 1a, 3a, 5a Insulator 2a, 2b Dielectric material 3 High voltage electrode 4 Insulation plate 5 High voltage cooling plate 6 Discharge space 8 Tightening plate 9 Connection block PH Through-hole 14b, 14c Gas output flange 14S Shower plate 14t Ejection hole 15 Electric supply terminal 16 Housing 17 AC power supply 17a Inverter 17b High-voltage transformer 18 Material to be processed 20 Gas supply part 21 Insulating cylinder part 21A Cavity part 21x Ejection hole 22 Pipe lines 24, 76 MFC for gas
25 MFC for sub-gas
26 automatic pressure control device 27 decompression device 28 exhaust gas decomposition processing device 30 exhaust gas output port 42 conductive member 43 conductive film 44 voltage application unit 75 pipe line 75a buffer unit 75b jet port 100 plasma generator 200 CVD chamber 201 carrier gas Supply part 201A Supply pipe line 201B Flange part 300 CVD apparatus

Claims (9)

An electrode cell;
A power supply for applying an alternating voltage to the electrode cell;
A housing surrounding the electrode cell;
A source gas supply unit for supplying source gas into the casing from the outside of the casing;
Has
The electrode cell is
A first electrode;
A second electrode facing the first electrode so as to form a discharge space;
A dielectric disposed on at least one of the main surface of the first electrode facing the discharge space and the main surface of the second electrode facing the discharge space;
A through-hole formed in the center in plan view and penetrating in the facing direction where the first electrode and the second electrode face each other,
Have
An insulating cylinder having a cylindrical shape, disposed inside the through-hole, and having an ejection hole in a side surface of the cylindrical shape;
A conductive member disposed in the hollow portion of the insulating tube portion;
In addition,
A plasma generator characterized by that. On the inner wall of the insulating cylinder part,
A conductive film is formed,
A voltage applicator for applying a voltage between the conductive member and the conductive film;
In addition,
The plasma generator according to claim 1. A pressure control device for maintaining a constant pressure in the discharge space;
In addition,
The plasma generator according to claim 1. In the second electrode,
A flow path through which the refrigerant flows is formed,
The plasma generator according to claim 1. The source gas supply unit
Supplying the source gas together with a rare gas;
The plasma generator according to claim 1. The electrode cell is
Multiple
Each electrode cell
Laminated in the facing direction,
The plasma generator according to claim 1. A shower plate disposed on the end side of the insulating cylinder portion,
In addition,
The plasma generating apparatus according to claim 6. A plasma generator;
A CVD chamber connected to the plasma device;
Has
The plasma generator comprises:
An electrode cell;
A power supply for applying an alternating voltage to the electrode cell;
A housing surrounding the electrode cell;
A source gas supply unit for supplying source gas into the casing from the outside of the casing;
Has
The electrode cell is
A first electrode;
A second electrode facing the first electrode so as to form a discharge space;
A dielectric disposed on at least one of the main surface of the first electrode facing the discharge space and the main surface of the second electrode facing the discharge space;
A through-hole formed in the center in plan view and penetrating in the facing direction where the first electrode and the second electrode face each other,
Have
An insulating cylinder having a cylindrical shape, disposed inside the through-hole, and having an ejection hole in a side surface of the cylindrical shape;
A conductive member disposed in the hollow portion of the insulating tube portion;
In addition,
The CVD chamber is
Connected to the end side of the insulating cylinder part,
A CVD apparatus characterized by that. On the inner wall of the insulating cylinder part,
A conductive film is formed,
The plasma generator comprises:
A voltage applicator for applying a voltage between the conductive member and the conductive film;
In addition,
The CVD apparatus according to claim 8.

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