JP2013030749A - Packaged thermistor and manufacturing method therefor - Google Patents

Packaged thermistor and manufacturing method therefor Download PDF

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JP2013030749A
JP2013030749A JP2012090886A JP2012090886A JP2013030749A JP 2013030749 A JP2013030749 A JP 2013030749A JP 2012090886 A JP2012090886 A JP 2012090886A JP 2012090886 A JP2012090886 A JP 2012090886A JP 2013030749 A JP2013030749 A JP 2013030749A
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case
peripheral wall
lead
inner peripheral
cover
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Masao Makishima
正夫 槇島
Masanobu Tamura
雅信 田村
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MAXIMUM TECHNOLOGY CO Ltd
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Abstract

PROBLEM TO BE SOLVED: To grant allowable operating characteristics by suppressing the heat conduction of a packaged thermistor.SOLUTION: A temperature dependent thermistor element (2) is placed in an electrically insulating package (1). Heat transfer from the thermistor element (2) generating heat to a substrate through the package (1) is suppressed sufficiently by an upper gap (9), a lower gap (7), a peripheral gap (8) and an air layer held in the upper gap (9).

Description

本発明は、フロー方式又はリフロー方式で基板上に半田付けできるパッケージ封入型サーミスタ及びその製法に関するものである。   The present invention relates to a packaged thermistor that can be soldered onto a substrate by a flow method or a reflow method, and a method for manufacturing the same.

所定の温度で急激に抵抗値が増大する正特性サーミスタは、例えば、過熱保護用、過電流保護用、温度検出センサ又はヒータとして多方面で利用されている。ラジアルリードを有する正特性サーミスタは、円板状のサーミスタ素子と、サーミスタ素子の両端面に形成される一対の電極と、サーミスタ素子の中心周りに約120度の角度で互いに離間して対応する電極に電気的に接続される金属製の第1及び第2のリードとを備える。実装の際に、プリント基板のスルーホールに挿入される第1及び第2のリードは、基板の配線パターンに対し半田付けされる。   A positive temperature coefficient thermistor whose resistance value suddenly increases at a predetermined temperature is used in various fields, for example, for overheat protection, overcurrent protection, a temperature detection sensor, or a heater. A positive temperature coefficient thermistor having radial leads includes a disc-shaped thermistor element, a pair of electrodes formed on both end faces of the thermistor element, and electrodes corresponding to each other at an angle of about 120 degrees around the center of the thermistor element. And metal first and second leads electrically connected to the first and second leads. During the mounting, the first and second leads inserted into the through holes of the printed board are soldered to the wiring pattern of the board.

近年では、基板の小型化、スルーホール実装機の省略及び組立ラインの簡略化を達成するために、コンデンサ、抵抗体又は半導体素子等他の電子部品と同様に、チップマウンタにより基板上に実装できるパッケージ封入型サーミスタが要望されている。このパッケージ封入型サーミスタは、従来のラジアルリードを有する無パッケージ型サーミスタと同等の動作特性をパッケージ封入型サーミスタも満たす事が要求される。   In recent years, in order to achieve downsizing of the board, omission of through-hole mounting machines, and simplification of the assembly line, it can be mounted on the board by a chip mounter as with other electronic components such as capacitors, resistors or semiconductor elements. There is a need for a packaged thermistor. This packaged thermistor is required to satisfy the same operating characteristics as a conventional packaged thermistor having a radial lead.

具体的にはパッケージ封入型PTC(正温度特性)サーミスタに要求される第1の特性は、−30℃〜80℃の範囲で変動する外部温度環境で使用しても、許容時間内に動作しなければならない点である。例えば、図20に示すようにPTCサーミスタに電圧を印加すると急激に上昇する突入電流がPTCサーミスタに流れる。すると電流の増加に伴いPTCサーミスタが自己発熱して温度が上昇し、抵抗値が増大する。このため、流れる電流は、最大電流値Imaxに達した後、平衡点電流値に向って電流が急激に減衰する。この場合に、電圧印加(起動)時T0からPTCサーミスタの抵抗により最大電流値Imaxの半値(Imax×1/2)に低下する時点T1までの時間(T1−T0)によりPTCサーミスタの許容動作特性が決定される。例えば、測定用負荷抵抗をPTCサーミスタに直列に接続し、室温、低温及び高温の3段階で直流電圧をPTCサーミスタに印加するときの許容動作時間の一例は、下表1の通りである。

Figure 2013030749
Specifically, the first characteristic required for a packaged PTC (positive temperature characteristic) thermistor operates within an allowable time even when used in an external temperature environment that fluctuates in the range of -30 ° C to 80 ° C. It is a point that must be done. For example, as shown in FIG. 20, when a voltage is applied to the PTC thermistor, an inrush current that rapidly increases flows to the PTC thermistor. Then, as the current increases, the PTC thermistor self-heats, the temperature rises, and the resistance value increases. For this reason, after the flowing current reaches the maximum current value I max , the current rapidly attenuates toward the equilibrium point current value. In this case, by applying a voltage (activation) time T 0 from the half of the maximum current value I max by the resistance of the PTC thermistor (I max × 1/2) time to time T 1 to be reduced to (T 1 -T 0) An allowable operating characteristic of the PTC thermistor is determined. For example, Table 1 below shows an example of an allowable operation time when a measurement load resistance is connected in series to a PTC thermistor and a DC voltage is applied to the PTC thermistor in three stages of room temperature, low temperature and high temperature.
Figure 2013030749

しかしながら、現在普及している図21に示す表面実装型の正特性サーミスタ素子を基板上に直接実装すると、サーミスタ素子から基板に伝達される熱量が大きいため、電圧印加時の素子温度上昇が緩慢となり、ラジアルリードを有する無パッケージ型正特性サーミスタと同等の許容動作特性が得られない欠陥がある。従って、表面実装型サーミスタに許容動作特性を付与するには、第1に、サーミスタ素子とサーミスタ素子を収容するケースとの間の熱伝導を抑制できる断熱構造及びケースと基板との間の熱伝導を抑制できる断熱構造でケースを形成する必要がある。第2に、表面実装構造を有するサーミスタを基板に実装するときに、ケースは、接触する温度240℃〜270℃の溶融半田の熱と侵入に耐えると共に、サーミスタ素子への溶融半田の付着を防止しなければならない。サーミスタ素子をケース内に収容して、溶融半田の熱的影響と付着とを回避する必要があるが、サーミスタ素子をケース内に収容しても、不完全な密閉構造であれば、ケース内に溶融半田が侵入して、サーミスタ素子が損傷する危険がある。従って、サーミスタ素子を収容するケースは、サーミスタ素子とケース及びケースと基板との間の熱伝達を十分に抑制できる構造及びケース内への溶融半田の侵入を十分に防止できる構造を備えなければならない。   However, when the surface mount type positive temperature coefficient thermistor element shown in FIG. 21, which is currently popular, is directly mounted on the substrate, the amount of heat transferred from the thermistor element to the substrate is large, so that the temperature rise of the element during voltage application becomes slow. However, there is a defect in which the allowable operating characteristics equivalent to those of the non-packaged positive temperature coefficient thermistor having radial leads cannot be obtained. Therefore, in order to give an allowable operating characteristic to the surface mount type thermistor, first, a heat insulating structure capable of suppressing heat conduction between the thermistor element and the case housing the thermistor element and heat conduction between the case and the substrate. It is necessary to form the case with a heat insulating structure that can suppress the above. Second, when mounting a thermistor having a surface mounting structure on a substrate, the case resists the heat and intrusion of molten solder at a contact temperature of 240 ° C. to 270 ° C. and prevents adhesion of the molten solder to the thermistor element. Must. It is necessary to accommodate the thermistor element in the case to avoid the thermal influence and adhesion of the molten solder. There is a risk that the thermistor element may be damaged due to the penetration of molten solder. Therefore, the case that accommodates the thermistor element must have a structure that can sufficiently suppress heat transfer between the thermistor element and the case, and the case and the substrate, and a structure that can sufficiently prevent the molten solder from entering the case. .

下記特許文献1は、内部空洞を有する絶縁性のケース内にサーミスタ素体を配置し、絶縁性のカバーによりケースの内部空洞を閉鎖する表面実装型サーミスタを開示する。しかしながら、特許文献1では、複雑な形状の端子を使用するため、生産コストが増加する難点がある。また、特許文献1では、サーミスタ素体がケース又はカバーに直接接触するため、ケース又はカバーを通じてサーミスタ素体と基板との間で十分な量の熱が伝達される欠陥がある。更に、リード部の弾接部がサーミスタ素体に接触して、サーミスタ素体がケース又はカバーに向って常時押圧される機械的応力を受けるため、サーミスタ素体の電気的特性が変動する危険がある。更に、この表面実装型サーミスタは、部品数が多く、複雑な形状を有する端子を所定の位置に装着する手間を要する。   Patent Document 1 below discloses a surface mount type thermistor in which a thermistor body is disposed in an insulating case having an internal cavity, and the internal cavity of the case is closed by an insulating cover. However, in patent document 1, since the terminal of a complicated shape is used, there exists a difficulty that production cost increases. Further, in Patent Document 1, since the thermistor element directly contacts the case or the cover, there is a defect that a sufficient amount of heat is transmitted between the thermistor element and the substrate through the case or the cover. Furthermore, since the elastic contact portion of the lead portion contacts the thermistor element body and the thermistor element body is subjected to mechanical stress that is constantly pressed toward the case or cover, there is a risk that the electrical characteristics of the thermistor element body will fluctuate. is there. Furthermore, this surface-mount type thermistor has a large number of components and requires time and effort to mount terminals having complicated shapes at predetermined positions.

これに対し、下記特許文献2は、ケース部材内に既存のスルーホール実装型電子部品素子を収容できる表面実装型セラミックコンデンサを開示する。しかしながら、特許文献2では、素子本体がケース部材に直接接触するため、ケース部材及びリード端子を通じて素子本体の熱が基板に伝達されて、素子本体の動作特性が変動する危険がある。また、複雑な形状を有するリード端子をケース部材に装着するには熟練と相当の時間を要する。更に、特許文献2では、ケース部材に形成される開口部を通じてケース部材内に溶融半田が侵入する恐れがある。このように、セラミックコンデンサに使用できる引用文献2のケース部材は、感温素子のパッケージに使用することはできない。   On the other hand, Patent Document 2 below discloses a surface mount ceramic capacitor that can accommodate an existing through-hole mount electronic component element in a case member. However, in Patent Document 2, since the element main body is in direct contact with the case member, the heat of the element main body is transmitted to the substrate through the case member and the lead terminals, and there is a risk that the operating characteristics of the element main body may fluctuate. Further, it takes skill and considerable time to attach the lead terminal having a complicated shape to the case member. Furthermore, in patent document 2, there exists a possibility that molten solder may penetrate | invade in a case member through the opening part formed in a case member. As described above, the case member of Patent Document 2 that can be used for a ceramic capacitor cannot be used for a package of a temperature sensitive element.

特開平8−55703号公報JP-A-8-55703 特開2009−10116号公報JP 2009-10116 A

そこで、本発明は、フロー方式又はリフロー方式で基板上に半田付けできるパッケージ封入型サーミスタ及びその製法を提供することを目的とする。
また、本発明は、実装時にパッケージ内への溶融半田の侵入を抑制できるパッケージ封入型サーミスタ及びその製法を提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a packaged thermistor that can be soldered onto a substrate by a flow method or a reflow method, and a method for manufacturing the same.
Another object of the present invention is to provide a packaged thermistor that can suppress the penetration of molten solder into the package during mounting, and a method for manufacturing the same.

本発明のパッケージ封入型サーミスタは、電気絶縁性のパッケージ(1)と、パッケージ(1)内に配置される温度依存性のサーミスタ素子(2)とを備える。パッケージ(1)は、底壁(31)、底壁(31)の周囲に接続される内周壁(32)及び底壁(31)と内周壁(32)とにより形成される内部空洞(11)を有するケース(3)と、ケース(3)の内部空洞(11)を覆う頂壁(41)及び頂壁(41)の周囲に接続されかつケース(3)の内周壁(32)の外側に配置される外周壁(42)を有するカバー(4)とを備える。このように、サーミスタ素子(2)の側面(26)は、ケース(3)の内周壁(32)とカバー(4)の外周壁(42)との二重壁構造により周辺環境から遮断される。また、内周壁(32)と外周壁(42)との面接触により、パッケージ(1)内部への溶融半田の侵入は、確実に遮断される。更に、サーミスタ素子(2)は、ケース(3)の底壁(31)及び内周壁(32)に対してそれぞれ下間隙(7)及び周間隙(8)を形成し、カバー(4)の頂壁(41)に対して上間隙(9)を形成するように配置されるので、下間隙(7)、周間隙(8)及び上間隙(9)内に保持される各空気層並びにケース(3)の底壁(31)、ケース(3)の内周壁(32)とカバー(4)の外周壁(42)との二重壁構造及びカバー(4)の頂壁(41)により、サーミスタ素子(2)と外部との間で伝導する熱量をパッケージ(1)により十分に抑制することができる。   The packaged thermistor of the present invention includes an electrically insulating package (1) and a temperature-dependent thermistor element (2) disposed in the package (1). The package (1) includes a bottom wall (31), an inner peripheral wall (32) connected to the periphery of the bottom wall (31), and an inner cavity (11) formed by the bottom wall (31) and the inner peripheral wall (32). A top wall (41) covering the internal cavity (11) of the case (3) and a periphery of the top wall (41) and outside the inner peripheral wall (32) of the case (3). And a cover (4) having an outer peripheral wall (42) to be arranged. Thus, the side surface (26) of the thermistor element (2) is shielded from the surrounding environment by the double wall structure of the inner peripheral wall (32) of the case (3) and the outer peripheral wall (42) of the cover (4). . Further, the surface contact between the inner peripheral wall (32) and the outer peripheral wall (42) reliably blocks the penetration of the molten solder into the package (1). Further, the thermistor element (2) forms a lower gap (7) and a circumferential gap (8) with respect to the bottom wall (31) and the inner circumferential wall (32) of the case (3), respectively, and the top of the cover (4). Since it is arranged to form an upper gap (9) with respect to the wall (41), each air layer and case held in the lower gap (7), the circumferential gap (8) and the upper gap (9) ( The thermistor is composed of the bottom wall (31) of 3), the double wall structure of the inner peripheral wall (32) of the case (3) and the outer peripheral wall (42) of the cover (4) and the top wall (41) of the cover (4). The amount of heat conducted between the element (2) and the outside can be sufficiently suppressed by the package (1).

本発明のパッケージ封入型サーミスタの製法は、底壁(31)、底壁(31)の周囲に接続される内周壁(32)及び底壁(31)と内周壁(32)とにより形成される内部空洞(11)を有するケース(3)と、頂壁(41)及び頂壁(41)の周囲に接続される外周壁(42)を有するカバー(4)とを備える電気絶縁性のパッケージ(1)を準備する工程と、ケース(3)の底壁(31)と温度依存性のサーミスタ素子(2)との間に下間隙(7)を形成しかつケース(3)の内周壁(32)とサーミスタ素子(2)との間に周間隙(8)を形成して、ケース(3)の内部空洞(11)内にサーミスタ素子(2)を配置する工程と、カバー(4)をケース(3)に装着して、カバー(4)の頂壁(41)によりケース(3)の内部空洞(11)を覆うと共に、ケース(3)の内周壁(32)の外側にカバー(4)の外周壁(42)を配置する工程とを含む。この製法により、既存のラジアルリードを有するサーミスタ素子(2)をパッケージ(1)内に収容して、パッケージ封入型サーミスタを容易に製造することができる。   The manufacturing method of the packaged thermistor of the present invention is formed by the bottom wall (31), the inner peripheral wall (32) connected to the periphery of the bottom wall (31), and the bottom wall (31) and the inner peripheral wall (32). An electrically insulating package comprising a case (3) having an internal cavity (11) and a cover (4) having a top wall (41) and an outer peripheral wall (42) connected to the periphery of the top wall (41) 1), a lower gap (7) is formed between the bottom wall (31) of the case (3) and the temperature-dependent thermistor element (2) and the inner peripheral wall (32) of the case (3) ) And the thermistor element (2) to form a circumferential gap (8), dispose the thermistor element (2) in the internal cavity (11) of the case (3), and cover (4) to the case Attached to (3), the top wall (41) of the cover (4) covers the internal cavity (11) of the case (3), and the cover (4) outside the inner peripheral wall (32) of the case (3). And arranging the outer peripheral wall (42). By this manufacturing method, a thermistor element (2) having an existing radial lead can be accommodated in the package (1), and a packaged thermistor can be easily manufactured.

本発明では、サーミスタ素子と基板又は外部との間で伝導する熱量をパッケージにより十分に抑制でき、パッケージ封入型サーミスタに許容動作特性を付与することができる。しかも、パッケージは、実装時に溶融半田の侵入を阻止できるので、安価で信頼性の高いパッケージ封入型サーミスタを得ることができる。   In the present invention, the amount of heat conducted between the thermistor element and the substrate or the outside can be sufficiently suppressed by the package, and allowable operating characteristics can be imparted to the package-enclosed thermistor. In addition, since the package can prevent intrusion of molten solder during mounting, an inexpensive and highly reliable packaged thermistor can be obtained.

本発明によるパッケージ封入型サーミスタを具現化したPTC装置の実施の形態を示す斜視図The perspective view which shows embodiment of the PTC apparatus which actualized the package enclosure type thermistor by this invention 図1のII-II線に沿うPTC装置の断面図Sectional view of the PTC device along the line II-II in FIG. 図1のIII-III線に沿うPTC装置の断面図Sectional view of the PTC device along the line III-III in FIG. PTC素子の平面図Plan view of PTC element PTC装置の分解斜視図Exploded perspective view of PTC device PTC装置を構成するケースの正面図Front view of the case constituting the PTC device ケースの平面図Top view of the case ケースの側面図Side view of the case ケースの背面図Rear view of the case 図7のX-X線に沿うケースの断面図Sectional view of the case along the line XX in FIG. 図7のXI-XI線に沿う部分断面図Partial sectional view taken along line XI-XI in FIG. 図7のXII-XII線に沿う部分断面図Partial sectional view taken along line XII-XII in FIG. 図1のPTC装置を構成するカバーの底面図The bottom view of the cover which comprises the PTC apparatus of FIG. 図13のXIV-XIV線に沿う断面図Sectional view along line XIV-XIV in FIG. 図13のXV-XV線に沿う断面図Sectional view along line XV-XV in FIG. 破線で示すカバーをケースに装着した状態を示す平面図The top view which shows the state which mounted | wore the case with the cover shown with a broken line 基板上に配置したPTC装置の側面図Side view of a PTC device placed on a substrate 本発明の別の実施の形態を示すPTC装置の斜視図The perspective view of the PTC device which shows another embodiment of this invention リフロー方式により基板上に固定されるPTC装置の側面図Side view of PTC device fixed on substrate by reflow method サーミスタ素子に流れる電流の変化を示すグラフGraph showing change in current flowing in thermistor element 現在普及している表面実装型サーミスタの外観図及び構造断面図External view and structural cross-sectional view of surface mount type thermistors that are currently popular

本発明によるパッケージ封入型サーミスタを具現化したPTC装置及びその製法の実施の形態を図1〜図19について以下説明する。   An embodiment of a PTC device embodying a packaged thermistor according to the present invention and a manufacturing method thereof will be described below with reference to FIGS.

図1に示すように、本実施の形態によるPTC装置(10)は、ケース(3)及びケース(3)に装着されるカバー(4)を有する電気絶縁性のパッケージ(1)と、パッケージ(1)内に配置される温度依存性の感温素子としてのサーミスタ素子(2)とを備え、サーミスタ素子(2)、ケース(3)及びカバー(4)の3部品のみでPTC装置(10)を構成することができる。   As shown in FIG. 1, a PTC device (10) according to the present embodiment includes a case (3) and an electrically insulating package (1) having a cover (4) attached to the case (3), and a package ( 1) A thermistor element (2) as a temperature-dependent temperature-sensitive element disposed in the PTC device (10) with only three components: the thermistor element (2), case (3) and cover (4) Can be configured.

図2及び図3に示すように、サーミスタ素子(2)は、素子本体(20)と、素子本体(20)の一対の電極(21,22)、即ち下電極(21)及び上電極(22)と、下電極(21)に電気的に接続される下内接部(5a)を有する金属製の一対のリード(5,6)、即ち下リード(5)と、上電極(22)に電気的に接続される上内接部(6a)を有する金属製の上リード(6)とを備える。サーミスタ素子(2)の各電極(21,22)に固着される下リード(5)と上リード(6)とをサーミスタ素子(2)として一体に取り扱うことができる。下リード(5)の下内接部(5a)の端部は、半田(28)により素子本体(20)の下電極(21)に固着され、上リード(6)の上内接部(6a)の端部は、半田(28)により素子本体(20)の上電極(22)に固着される。図示の簡略化のため、図1〜図4以外の図面では、半田(28)の図示を省略する。   As shown in FIGS. 2 and 3, the thermistor element (2) includes an element body (20) and a pair of electrodes (21, 22) of the element body (20), that is, a lower electrode (21) and an upper electrode (22). ) And a pair of metal leads (5, 6) having a lower inscribed portion (5a) electrically connected to the lower electrode (21), that is, the lower lead (5) and the upper electrode (22) A metal upper lead (6) having an upper inscribed portion (6a) to be electrically connected. The lower lead (5) and the upper lead (6) fixed to each electrode (21, 22) of the thermistor element (2) can be handled integrally as the thermistor element (2). The end of the lower inscribed portion (5a) of the lower lead (5) is fixed to the lower electrode (21) of the element body (20) by solder (28), and the upper inscribed portion (6a) of the upper lead (6) ) Is fixed to the upper electrode (22) of the element body (20) by solder (28). For simplification of illustration, illustration of solder (28) is omitted in drawings other than FIGS.

ほぼ円板状又はディスク状に形成される素子本体(20)は、平坦な円形の下面(23)と上面(24)とを有する。図4及び図5に示すように、下リード(5)の下内接部(5a)及び上リード(6)の上内接部(6a)は、素子本体(20)の下面(23)及び上面(24)に対して平行にかつ素子本体(20)の下電極(21)及び下電極(21)から素子本体(20)の外側に延伸する。下リード(5)及び上リード(6)を通じて素子本体(20)に突入電流が流れると、素子本体(20)は、自己発熱によりある温度で急激に抵抗値を増大して、素子本体(20)を流れる電流値は、最大値に達し、その後減衰する。   The element body (20) formed in a substantially disk shape or disk shape has a flat circular lower surface (23) and an upper surface (24). As shown in FIGS. 4 and 5, the lower inscribed portion (5a) of the lower lead (5) and the upper inscribed portion (6a) of the upper lead (6) are formed on the lower surface (23) of the element body (20). Parallel to the upper surface (24) and extends from the lower electrode (21) and the lower electrode (21) of the element body (20) to the outside of the element body (20). When an inrush current flows to the element body (20) through the lower lead (5) and the upper lead (6), the element body (20) suddenly increases its resistance value at a certain temperature due to self-heating, and the element body (20 ) Reaches a maximum value and then decays.

例えば、チタン酸バリウムを主成分とする素子本体(20)は、安定な抵抗温度特性を有し、原料の微粒化により小型の素子本体(20)を形成できる。チタン酸バリウムを主成分とするPTC素子の特性及び製法は、例えば、本特許出願人による特開2010−3814号公報から公知であるから、製法の詳述を省略する。本発明では、セラミックPTC、カーボン・ポリマー系PTC又は金属酸化物・ポリマー系PTC等の公知の正特性サーミスタを制限なく使用できる。   For example, the element body (20) mainly composed of barium titanate has stable resistance-temperature characteristics, and a small element body (20) can be formed by atomizing the raw material. Since the characteristics and manufacturing method of the PTC element mainly composed of barium titanate are known from, for example, Japanese Patent Application Laid-Open No. 2010-3814 filed by the present applicant, detailed description of the manufacturing method is omitted. In the present invention, a known positive temperature coefficient thermistor such as ceramic PTC, carbon polymer PTC, or metal oxide polymer PTC can be used without limitation.

下リード(5)及び上リード(6)は、銅線又はスズめっき銅線等、円形断面又は角形断面を有する一般的な電子部品の外部リード線を使用できる。市販の安価なディスク型PTC素子では、一対のリードは、素子の中心に対し互いに角度120度だけ離間して素子に固着されるが、本発明では、サーミスタ素子(2)の小型化のため、図4に示すように、下リード(5)と上リード(6)は、サーミスタ素子(2)の中心(27)(図4)周りに80度〜100度の間の角度θ、好ましくは90度だけ互いに離間してサーミスタ素子(2)に半田(28)で何れも水平に固着され導出されるので、リード間の角度が120度の従来のPTC素子よりも小型にサーミスタ素子(2)を形成できる。下リード(5)は、下内接部(5a)から下方に直角に折曲される下中間部(5b)と、下中間部(5b)から水平方向に更に直角に折曲される下導出部(5c)とを備える。同様に、上リード(6)は、上内接部(6a)から下方に直角に折曲される上中間部(6b)と、上中間部(6b)から水平方向に更に直角に折曲される上導出部(6c)とを備える。   As the lower lead (5) and the upper lead (6), external lead wires of general electronic components having a circular cross section or a square cross section such as a copper wire or a tin-plated copper wire can be used. In a commercially available inexpensive disk-type PTC element, the pair of leads are fixed to the element at an angle of 120 degrees with respect to the center of the element. In the present invention, for the miniaturization of the thermistor element (2), As shown in FIG. 4, the lower lead (5) and the upper lead (6) have an angle θ between 80 ° and 100 ° around the center (27) (FIG. 4) of the thermistor element (2), preferably 90 The thermistor element (2) is separated from each other by a certain degree and is horizontally fixed to the thermistor element (2) with the solder (28) and is led out. Can be formed. The lower lead (5) has a lower intermediate part (5b) bent downward at a right angle from the lower inscribed part (5a) and a lower lead bent further at a right angle in the horizontal direction from the lower intermediate part (5b). Part (5c). Similarly, the upper lead (6) is bent at a right angle in the horizontal direction from the upper middle portion (6b) and the upper middle portion (6b) which is bent at a right angle downward from the upper inscribed portion (6a). And an upper deriving unit (6c).

ケース(3)及びカバー(4)により形成されるパッケージ(1)は、例えば、ガラス入りPPS(ポリフェニレンサルファイド樹脂)又はガラス入りLCP(液晶ポリマー)等の半田耐熱性を有する電子部品の公知のパッケージ材料が使用される。エポキシ樹脂及びシリコーン樹脂等、電気絶縁性を有する他の公知の半導体用又は工業用パッケージ材料を使用してもよい。   The package (1) formed by the case (3) and the cover (4) is a known package of electronic components having solder heat resistance such as glass-filled PPS (polyphenylene sulfide resin) or glass-filled LCP (liquid crystal polymer). Material is used. Other known semiconductor or industrial packaging materials having electrical insulation properties such as epoxy resins and silicone resins may be used.

図6〜図11に示すように、ケース(3)は、ほぼ正方形又は長方形の板状に形成される底壁(31)と、底壁(31)の縁部周囲に沿って直角に接続されかつほぼ正方形又は長方形の筒状に形成される内周壁(32)と、底壁(31)及び内周壁(32)により形成される内部空洞(11)と、内周壁(32)の上部に形成される開放部(37)とを有する。内周壁(32)は、前壁(16)と、前壁(16)に対向する後壁(19)と、前壁(16)と後壁(19)との間に配置される一対の側壁(17,18)とを備え、前壁(16)と各側壁(17,18)との接続部に一対の切欠部(38)が形成される。図示の例では、前壁(16)と各側壁(17,18)との接続部に一対の切欠部(38)を形成する例を示すが、接続部に限定されず、電気的短絡を防止して下リード(5)と上リード(6)とを分離できれば、一対の切欠部(38)を前壁(16)のどこに形成してもよい。前壁(16)と後壁(19)には、底壁(31)より高い位置に2つの段部(39)が形成される。   As shown in FIGS. 6 to 11, the case (3) is connected to the bottom wall (31) formed in a substantially square or rectangular plate shape and at right angles along the periphery of the edge of the bottom wall (31). And formed in the upper part of the inner peripheral wall (32) formed by the inner peripheral wall (32) formed in a substantially square or rectangular cylindrical shape, the inner cavity (11) formed by the bottom wall (31) and the inner peripheral wall (32). And an open portion (37). The inner peripheral wall (32) includes a front wall (16), a rear wall (19) facing the front wall (16), and a pair of side walls disposed between the front wall (16) and the rear wall (19). (17, 18), and a pair of notches (38) are formed at the connection between the front wall (16) and the side walls (17, 18). In the example shown in the figure, a pair of notches (38) are formed at the connection portion between the front wall (16) and each side wall (17, 18), but the present invention is not limited to the connection portion, and an electrical short circuit is prevented. As long as the lower lead (5) and the upper lead (6) can be separated, the pair of notches (38) may be formed anywhere on the front wall (16). Two steps (39) are formed on the front wall (16) and the rear wall (19) at a position higher than the bottom wall (31).

一対の側壁(17,18)の各外面には、傾斜面(51)と、傾斜面(51)の下端に形成される係止面(52)とを有する爪(50)が設けられる。傾斜面(51)は、ケース(3)の下方に向けて側壁(17,18)から離間する方向に拡がるテーパ状に形成され、係止面(52)は、底壁(31)に対して平行に形成される。図5に示すように、爪(50)を有する一対の側壁(17,18)は、前壁(16)及び後壁(19)に対して肉厚に形成される。比較的肉薄に形成される前壁(16)及び後壁(19)には、ケース(3)の上面(3a)から前壁(16)及び後壁(19)の各段部(39)にかけて一対の開口(36)が形成され、ケース(3)を軽量化しかつ材料を削減することができる。   A claw (50) having an inclined surface (51) and a locking surface (52) formed at the lower end of the inclined surface (51) is provided on each outer surface of the pair of side walls (17, 18). The inclined surface (51) is formed in a tapered shape that extends downward from the side wall (17, 18) toward the lower side of the case (3), and the locking surface (52) is formed with respect to the bottom wall (31). They are formed in parallel. As shown in FIG. 5, the pair of side walls (17, 18) having the claws (50) are formed thicker than the front wall (16) and the rear wall (19). The front wall (16) and the rear wall (19) formed relatively thinly extend from the upper surface (3a) of the case (3) to each step (39) of the front wall (16) and the rear wall (19). A pair of openings (36) is formed, and the case (3) can be reduced in weight and material can be reduced.

ケース(3)は、前壁(16)と各側壁(17,18)との接続部でケース(3)の上面(3a)から下方に向けて形成される一対の切欠部(38)と、切欠部(38)に連続してそれらの下方にほぼ半円断面でそれぞれ形成される一対の内割溝(14)とを有する。下リード(5)と上リード(6)の両方をケース(3)の前壁(16)又は前壁(16)と各側壁(17,18)との接続部のみの外側に延伸させるので、PTC装置(10)を小型化できる。図6、図11及び図12に示すように、切欠部(38)の内下リード(5)を配置する下切欠部(38a)の内割溝(14a)は、底壁(31)と同一の高さまで下方から延伸するが、切欠部(38)の内上リード(6)を配置する上切欠部(38b)の内割溝(14b)は、内割溝(14a)より高い位置に形成される。下リード(5)の下内接部(5a)は、ケース(3)の内周壁(32)の下切欠部(38a)から外部に導出され、上リード(6)の上内接部(6a)は、ケース(3)の内周壁(32)の上切欠部(38b)から外部に導出されるので、上リード(6)の上中間部(6b)は、下リード(5)の下中間部(5b)よりも垂直方向に長く形成される。同様に、上リード(6)の上中間部(6b)を配置する内割溝(14b)は、下リード(5)の下中間部(5b)を配置する内割溝(14a)よりも垂直方向に長く形成される。   The case (3) has a pair of notches (38) formed downward from the upper surface (3a) of the case (3) at the connection portion between the front wall (16) and each side wall (17, 18), It has a pair of inner dividing grooves (14) formed in a substantially semicircular cross section below them continuously from the notch (38). Since both the lower lead (5) and the upper lead (6) are extended to the outside of the front wall (16) of the case (3) or only the connection portion between the front wall (16) and each side wall (17, 18), The PTC device (10) can be reduced in size. As shown in FIGS. 6, 11 and 12, the inner groove (14a) of the lower notch (38a) in which the inner lower lead (5) of the notch (38) is disposed is the same as the bottom wall (31). The inner groove (14b) of the upper notch (38b) where the inner upper lead (6) of the notch (38) is placed is formed at a position higher than the inner groove (14a). Is done. The lower inscribed portion (5a) of the lower lead (5) is led out from the lower notch (38a) of the inner peripheral wall (32) of the case (3), and the upper inscribed portion (6a of the upper lead (6) ) Is led out from the upper notch (38b) of the inner peripheral wall (32) of the case (3), so the upper middle (6b) of the upper lead (6) is the lower middle of the lower lead (5). It is longer in the vertical direction than the portion (5b). Similarly, the inner groove (14b) in which the upper middle portion (6b) of the upper lead (6) is disposed is perpendicular to the inner groove (14a) in which the lower middle portion (5b) of the lower lead (5) is disposed. Long in the direction.

図7に示すように、ケース(3)の内部空洞(11)は、サーミスタ素子(2)の素子本体(20)の形状に合わせて、ほぼ円柱状の内部空洞(11)を有する。前壁(16)と後壁(19)に形成される各段部(39)は、底壁(31)に対して平行に形成される当接面(47)(図5及び図7)と、底壁(31)に対して直角にかつ当接面(47)から底壁(31)まで形成される垂直面(48)とを有する。段部(39)の当接面(47)は、ケース(3)の上面(3a)より低くかつ底壁(31)より高い位置に形成される。パッケージ(1)内にサーミスタ素子(2)を配置すると、素子本体(20)の下面(23)の縁部(23b)が段部(39)の当接面(47)に当接し、底壁(31)と素子本体(20)の下面(23)の中央部(23a)との間に下間隙(7)が形成され、下間隙(7)内の空気層は、断熱作用を生じる。即ち、素子本体(20)の下面(23)の縁部(23b)のみがケース(3)に接触して素子本体(20)が底壁(31)上で支持され、素子本体(20)の下面(23)の中央部(23a)がケース(3)の底壁(31)から離間して、ケース(3)の内部空洞(11)内で素子本体(20)の大部分は、下間隙(7)の上に配置される。素子本体(20)の下面(23)の図4に示す中央部(23a)は、下電極(21)を形成する中央領域をいい、縁部(23b)は、下電極(21)を外側から包囲する環状の周辺領域をいう。   As shown in FIG. 7, the internal cavity (11) of the case (3) has a substantially cylindrical internal cavity (11) in accordance with the shape of the element body (20) of the thermistor element (2). Each step portion (39) formed on the front wall (16) and the rear wall (19) has a contact surface (47) (FIGS. 5 and 7) formed parallel to the bottom wall (31). And a vertical surface (48) formed perpendicular to the bottom wall (31) and from the contact surface (47) to the bottom wall (31). The contact surface (47) of the step portion (39) is formed at a position lower than the upper surface (3a) of the case (3) and higher than the bottom wall (31). When the thermistor element (2) is arranged in the package (1), the edge (23b) of the lower surface (23) of the element body (20) contacts the contact surface (47) of the stepped part (39), and the bottom wall A lower gap (7) is formed between (31) and the central portion (23a) of the lower surface (23) of the element body (20), and the air layer in the lower gap (7) has a heat insulating effect. That is, only the edge (23b) of the lower surface (23) of the element body (20) is in contact with the case (3) and the element body (20) is supported on the bottom wall (31), and the element body (20) The central portion (23a) of the lower surface (23) is separated from the bottom wall (31) of the case (3), and the majority of the element body (20) in the internal cavity (11) of the case (3) has a lower gap. It is placed on (7). The central portion (23a) shown in FIG. 4 of the lower surface (23) of the element body (20) is a central region forming the lower electrode (21), and the edge portion (23b) is the lower electrode (21) from the outside. An encircling peripheral region that surrounds.

図示の実施の形態では、前壁(16)と後壁(19)に2つの段部(39)を設けるが、前壁(16)又は後壁(19)の一方に単一の段部(39)を設けるか前壁(16)と後壁(19)に加えて側壁(17,18)に付加的に段部(39)を設けてもよい。また、ケース(3)の内周壁(32)に沿って、環状の段部(39)を形成してもよい。複数の段部(39)の当接面(47)は、それぞれ同一の高さに形成され、サーミスタ素子(2)の素子本体(20)を水平に保持できる。ケース(3)の前壁(16)に形成される前段部(39a)を省略して、下リード(5)及び上リード(6)と、ケース(3)の後壁(19)に形成される後段部(39b)とにより、内部空洞(11)内に素子本体(20)を保持してもよい。素子本体(20)を後段部(39b)のみに接触させれば、素子本体(20)とケース(3)との接触面積をより減少できる。場合により、ケース(3)とカバー(4)とにより下リード(5)及び上リード(6)を挟持して、素子本体(20)を段部(39)に接触させずに、素子本体(20)を内部空洞(11)内に保持することもできる。   In the illustrated embodiment, two steps (39) are provided on the front wall (16) and the rear wall (19), but a single step (one on either the front wall (16) or the rear wall (19) ( 39) or a step (39) may be additionally provided on the side walls (17, 18) in addition to the front wall (16) and the rear wall (19). An annular step (39) may be formed along the inner peripheral wall (32) of the case (3). The contact surfaces (47) of the plurality of step portions (39) are formed at the same height, and can hold the element body (20) of the thermistor element (2) horizontally. The front step (39a) formed on the front wall (16) of the case (3) is omitted, and the lower lead (5) and the upper lead (6) and the rear wall (19) of the case (3) are formed. The element body (20) may be held in the internal cavity (11) by the rear stage portion (39b). If the element body (20) is brought into contact with only the rear stage (39b), the contact area between the element body (20) and the case (3) can be further reduced. In some cases, the lower body lead (5) and the upper lead (6) are sandwiched between the case (3) and the cover (4) so that the element body (20) does not come into contact with the stepped portion (39). 20) can also be retained in the internal cavity (11).

図3に示すように、ケース(3)は、ケース(3)の底面(3b)から下方に向けて突出するほぼ円柱状の2つの脚部(25)を有する。ケース(3)の後壁(19)に近接して形成される後突起(25b)は、ケース(3)の前壁(16)に近接して形成される前突起(25a)よりも長く形成される。前突起(25a)より下方に、下リード(5)の下中間部(5b)と上リード(6)の上中間部(6b)とを下方に突出させて、下リード(5)の下導出部(5c)と、上リード(6)の上導出部(6c)と、ケース(3)の後突起(25b)との3点により、基板(29)上でPTC装置(10)を支持できる。ケース(3)の後突起(25b)のみが基板(29)と接触するので、ケース(3)の底面(3b)と基板(29)との間に断熱作用を生じる外部空気層を収容する空間(40)が形成され、外部空気層によりケース(3)を通じて素子(20)から基板(29)に伝達される熱をより抑制できる。ケース(3)内にサーミスタ素子(2)を装着するときに、ケース(3)の前突起(25a)は、後突起(25b)と共にケース(3)をほぼ水平に保持することができる。図示しないが、ケース(3)の前突起(25a)を省略又は他の突起をケース(3)の底面(3b)に設けてもよい。   As shown in FIG. 3, the case (3) has two substantially cylindrical leg portions (25) protruding downward from the bottom surface (3b) of the case (3). The rear protrusion (25b) formed close to the rear wall (19) of the case (3) is longer than the front protrusion (25a) formed close to the front wall (16) of the case (3). Is done. Lower the lower lead (5) by projecting the lower middle part (5b) of the lower lead (5) and the upper middle part (6b) of the upper lead (6) downward from the front protrusion (25a). The PTC device (10) can be supported on the substrate (29) by the three points of the portion (5c), the upper lead-out portion (6c) of the upper lead (6), and the rear protrusion (25b) of the case (3). . Since only the rear protrusion (25b) of the case (3) is in contact with the substrate (29), a space for accommodating an external air layer that generates heat insulation between the bottom surface (3b) of the case (3) and the substrate (29). (40) is formed, and heat transmitted from the element (20) to the substrate (29) through the case (3) by the external air layer can be further suppressed. When the thermistor element (2) is mounted in the case (3), the front protrusion (25a) of the case (3) can hold the case (3) almost horizontally together with the rear protrusion (25b). Although not shown, the front protrusion (25a) of the case (3) may be omitted or another protrusion may be provided on the bottom surface (3b) of the case (3).

図13〜図15に示すように、カバー(4)は、頂壁(41)と、頂壁(41)の周囲に直角に接続される外周壁(42)と、頂壁(41)及び外周壁(42)により形成される収容部(12)と、外周壁(42)の下部に形成される開放部(46)とを有する。カバー(4)の頂壁(41)は、ケース(3)の底壁(31)よりも一回り大きなほぼ正方形又は長方形の板状に形成され、外周壁(42)は、頂壁(41)の縁部に沿いほぼ正方形又は長方形の筒状に形成される。カバー(4)の外周壁(42)は、前壁(43)と、前壁(43)に対向する後壁(44)と、前壁(43)と後壁(44)との間に配置される一対の側壁(45)とを有する。また、カバー(4)は、前壁(43)及び後壁(44)と各側壁(45)との接続部付近に形成される4つの外割溝(15)を内側に有する。カバー(4)の外割溝(15)は、ケース(3)の内割溝(14)に対応する位置に外周壁(42)から外周壁(42)の下部まで垂直方向に形成される。   As shown in FIGS. 13 to 15, the cover (4) includes a top wall (41), an outer peripheral wall (42) connected at right angles to the periphery of the top wall (41), the top wall (41) and the outer periphery. It has an accommodating part (12) formed by the wall (42) and an open part (46) formed at the lower part of the outer peripheral wall (42). The top wall (41) of the cover (4) is formed in a substantially square or rectangular plate shape that is slightly larger than the bottom wall (31) of the case (3), and the outer peripheral wall (42) is a top wall (41). A substantially square or rectangular cylinder is formed along the edge. The outer peripheral wall (42) of the cover (4) is disposed between the front wall (43), the rear wall (44) facing the front wall (43), and between the front wall (43) and the rear wall (44). And a pair of side walls (45). Further, the cover (4) has four outer dividing grooves (15) formed in the vicinity of the connecting portion between the front wall (43) and the rear wall (44) and each side wall (45). The outer dividing groove (15) of the cover (4) is formed vertically from the outer peripheral wall (42) to the lower part of the outer peripheral wall (42) at a position corresponding to the inner dividing groove (14) of the case (3).

PTC装置(10)を組み立てる際に、リード線がハンダ付けされたサーミスタ素子(2)、ケース(3)及びカバー(4)を準備する。サーミスタ素子(2)の下リード(5)及び上リード(6)は、例えば、図示の所定形状に予め折曲され、下リード(5)の下内接部(5a)、下中間部(5b)及び下導出部(5c)と、上リード(6)の上中間部(6b)、上中間部(6b)及び上導出部(6c)とが形成される。図示及び詳述しないが、ケース(3)及びカバー(4)は、インジェクションモールド、トランスファーモールド等の公知の製法により形成される。   When assembling the PTC device (10), the thermistor element (2), the case (3) and the cover (4) to which the lead wires are soldered are prepared. The lower lead (5) and the upper lead (6) of the thermistor element (2) are, for example, pre-bent into the predetermined shape shown in the figure, and the lower lead (5) has a lower inscribed portion (5a) and a lower intermediate portion (5b). ) And a lower lead-out portion (5c), and an upper middle portion (6b), an upper middle portion (6b), and an upper lead-out portion (6c) of the upper lead (6). Although not shown or described in detail, the case (3) and the cover (4) are formed by a known manufacturing method such as an injection mold or a transfer mold.

次に、図示しない実装機により、ケース(3)の開放部(37)を通じて内部空洞(11)内にサーミスタ素子(2)を挿入し、ケース(3)の段部(39)に素子本体(20)の下面(23)の縁部(23b)が当接する状態でケース(3)にサーミスタ素子(2)を装着する。このとき、サーミスタ素子(2)の下リード(5)と上リード(6)とをケース(3)の内周壁(32)の切欠部(38)を通じて内周壁(32)の外側に延伸させる。即ち、ケース(3)の内周壁(32)の下切欠部(38a)を通じて下リード(5)の下内接部(5a)をケース(3)の外側に延伸させ、ケース(3)の内周壁(32)の上切欠部(38b)を通じて上リード(6)の上中間部(6b)をケース(3)の外側に延伸させる。   Next, the thermistor element (2) is inserted into the internal cavity (11) through the open part (37) of the case (3) by a mounting machine (not shown), and the element body ( The thermistor element (2) is mounted on the case (3) with the edge (23b) of the lower surface (23) of 20) in contact. At this time, the lower lead (5) and the upper lead (6) of the thermistor element (2) are extended to the outside of the inner peripheral wall (32) through the notch (38) of the inner peripheral wall (32) of the case (3). That is, the lower inscribed portion (5a) of the lower lead (5) is extended to the outside of the case (3) through the lower notch (38a) of the inner peripheral wall (32) of the case (3), and the inner portion of the case (3) The upper middle portion (6b) of the upper lead (6) is extended to the outside of the case (3) through the upper cutout portion (38b) of the peripheral wall (32).

ケース(3)の内部空洞(11)内にサーミスタ素子(2)を配置すると、サーミスタ素子(2)の側面(26)は、ケース(3)の内周壁(32)とカバー(4)の外周壁(42)との二重壁構造により周辺環境から遮断される。また、内周壁(32)と外周壁(42)との面接触により、パッケージ(1)内部への溶融半田の侵入は、確実に遮断される。更に、サーミスタ素子(2)は、ケース(3)の底壁(31)及び内周壁(32)に対してそれぞれ下間隙(7)及び周間隙(8)を形成し、下間隙(7)及び周間隙(8)内に保持される各空気層により、サーミスタ素子(2)からパッケージ(1)への熱伝達を十分に抑制することができる。   When the thermistor element (2) is placed in the internal cavity (11) of the case (3), the side surface (26) of the thermistor element (2) is aligned with the inner peripheral wall (32) of the case (3) and the outer periphery of the cover (4). It is shielded from the surrounding environment by the double wall structure with the wall (42). Further, the surface contact between the inner peripheral wall (32) and the outer peripheral wall (42) reliably blocks the penetration of the molten solder into the package (1). Further, the thermistor element (2) forms a lower gap (7) and a peripheral gap (8) with respect to the bottom wall (31) and the inner peripheral wall (32) of the case (3), respectively, and the lower gap (7) and Each air layer held in the circumferential gap (8) can sufficiently suppress heat transfer from the thermistor element (2) to the package (1).

続いて、図2に示すように、ケース(3)に装着されるサーミスタ素子(2)、ケース(3)の内部空洞(11)及び開放部(37)を覆ってケース(3)にカバー(4)を被着し、爪(50)の傾斜面(51)に沿ってカバー(4)を滑動させた後に、カバー(4)自身の弾力を利用して、カバー(4)に形成した開口部(53)を爪(50)の係止面(52)にスナップ作用で係止させて、カバー(4)をケース(3)に装着する。ケース(3)の爪(50)とカバー(4)の開口部(53)により、接着剤又は他の固定部材を使用せずに、ケース(3)の外側にカバー(4)を固定できる。このとき、ケース(3)の内周壁(32)とカバー(4)との間に下リード(5)の下中間部(5b)及び上リード(6)の上中間部(6b)が配置され、ケース(3)とカバー(4)により形成されるパッケージ(1)の底部から外部に下リード(5)の下導出部(5c)及び上リード(6)の上導出部(6c)が導出され、図1に示すパッケージ封入型のPTC装置(10)を容易に組み立てることができる。サーミスタ素子(2)は、カバー(4)の頂壁(41)に対して上間隙(9)を形成するように配置されるので、上間隙(9)内に保持される空気層並びにケース(3)の底壁(31)、ケース(3)の内周壁(32)とカバー(4)の外周壁(42)との二重壁構造及びカバー(4)の頂壁(41)により、サーミスタ素子(2)からパッケージ(1)を通じて伝導する熱伝達を十分に抑制することができる。また、ケース(3)の内周壁(32)とカバー(4)との間に配置され保持される下リード(5)と上リード(6)により、パッケージ(1)の内部空洞(11)内の素子本体(20)の中央部(23a)をパッケージ(1)に接触させずかつサーミスタ素子(2)の移動を阻止できる。   Subsequently, as shown in FIG. 2, the thermistor element (2) attached to the case (3), the internal cavity (11) of the case (3) and the open part (37) are covered with the case (3) ( 4), the cover (4) is slid along the inclined surface (51) of the nail (50), and then the cover (4) itself is used to open the cover (4). The portion (53) is locked to the locking surface (52) of the claw (50) by snap action, and the cover (4) is attached to the case (3). The cover (4) can be fixed to the outside of the case (3) by using the claw (50) of the case (3) and the opening (53) of the cover (4) without using an adhesive or other fixing members. At this time, the lower middle portion (5b) of the lower lead (5) and the upper middle portion (6b) of the upper lead (6) are arranged between the inner peripheral wall (32) of the case (3) and the cover (4). The lower lead-out part (5c) of the lower lead (5) and the upper lead-out part (6c) of the upper lead (6) lead out from the bottom of the package (1) formed by the case (3) and the cover (4) Thus, the package-enclosed PTC device 10 shown in FIG. 1 can be easily assembled. The thermistor element (2) is arranged so as to form an upper gap (9) with respect to the top wall (41) of the cover (4), so that the air layer and the case held in the upper gap (9) ( The thermistor is composed of the bottom wall (31) of 3), the double wall structure of the inner peripheral wall (32) of the case (3) and the outer peripheral wall (42) of the cover (4) and the top wall (41) of the cover (4). Heat transfer conducted from the element (2) through the package (1) can be sufficiently suppressed. In addition, the lower lead (5) and the upper lead (6) arranged and held between the inner peripheral wall (32) of the case (3) and the cover (4) are provided in the inner cavity (11) of the package (1). The center portion (23a) of the element main body (20) can be prevented from contacting the package (1) and the thermistor element (2) can be prevented from moving.

ケース(3)にカバー(4)を装着すると、下リード(5)の下導出部(5c)及び上リード(6)の上導出部(6c)とケース(3)の底面(3b)とを除き、カバー(4)は、ケース(3)の開放部(37)を閉鎖すると同時に、ケース(3)の内周壁(32)を外側から包囲する。また、図16に示すように、ケース(3)の内割溝(14)とカバー(4)の外割溝(15)とが対向して形成されるほぼ円筒状の一対の通路(14,15)内に下リード(5)の下中間部(5b)及び上リード(6)の上中間部(6b)を配置することができる。ケース(3)にカバー(4)を被せると、ケース(3)の前壁(16)とカバー(4)の前壁(43)とが対向し、ケース(3)の後壁(19)とカバー(4)の後壁(44)とが対向する。しかしながら、カバー(4)内の4つの隅部に外割溝(15)を設けるので、ケース(3)にカバー(4)を被せても、パッケージ(1)をあまり大型化させずに、ケース(3)の内割溝(14)とカバー(4)の外割溝(15)とが対向して一対の通路(14,15)を形成できる。また、カバー(4)の四隅に外割溝(15)を形成するので、取付方向を考慮せずに、カバー(4)をケース(3)に装着することができる。ケース(3)に被着されるカバー(4)の頂壁(41)の内面(41a)は、ケース(3)の上面(3a)に密着するので、基板(29)にPTC装置(10)を半田付けするときに、通路(14,15)を形成しないカバー(4)の外割溝(15)からケース(3)内に溶融半田が侵入するのを防止できる。   When the cover (4) is attached to the case (3), the lower lead-out portion (5c) of the lower lead (5) and the upper lead-out portion (6c) of the upper lead (6) and the bottom surface (3b) of the case (3) Except for this, the cover (4) closes the opening (37) of the case (3) and simultaneously surrounds the inner peripheral wall (32) of the case (3) from the outside. Further, as shown in FIG. 16, a pair of substantially cylindrical passages (14, 14) formed so that the inner dividing groove (14) of the case (3) and the outer dividing groove (15) of the cover (4) are opposed to each other. 15) A lower middle portion (5b) of the lower lead (5) and an upper middle portion (6b) of the upper lead (6) can be arranged in the lower lead (5). When covering the case (3) with the cover (4), the front wall (16) of the case (3) and the front wall (43) of the cover (4) face each other, and the rear wall (19) of the case (3) The rear wall (44) of the cover (4) faces. However, since the outer groove (15) is provided at the four corners of the cover (4), the case (3) can be covered with the cover (4) without increasing the size of the package (1). The inner dividing groove (14) of (3) and the outer dividing groove (15) of the cover (4) face each other to form a pair of passages (14, 15). Further, since the outer dividing grooves (15) are formed at the four corners of the cover (4), the cover (4) can be mounted on the case (3) without considering the mounting direction. Since the inner surface (41a) of the top wall (41) of the cover (4) attached to the case (3) is in close contact with the upper surface (3a) of the case (3), the PTC device (10) is attached to the substrate (29). When soldering is performed, molten solder can be prevented from entering the case (3) from the outer dividing groove (15) of the cover (4) that does not form the passages (14, 15).

図3に示すように、ケース(3)の内周壁(32)は、サーミスタ素子(2)よりも高く形成されるので、ケース(3)にカバー(4)を装着したとき、カバー(4)の頂壁(41)とサーミスタ素子(2)との間に上間隙(9)が形成される。カバー(4)の頂壁(41)とサーミスタ素子(2)の上面(24)との間に断熱作用を生じる空気層を収容する上間隙(9)が形成されるので、カバー(4)の頂壁(41)を通じて外部空間に伝達される熱量を低減して、自身の発熱によるサーミスタ素子(2)の温度上昇は、妨げられない。   As shown in FIG. 3, since the inner peripheral wall (32) of the case (3) is formed higher than the thermistor element (2), when the cover (4) is attached to the case (3), the cover (4) An upper gap (9) is formed between the top wall (41) and the thermistor element (2). An upper gap (9) is formed between the top wall (41) of the cover (4) and the upper surface (24) of the thermistor element (2) to accommodate an air layer that generates heat insulation. The amount of heat transferred to the external space through the top wall (41) is reduced, and the temperature rise of the thermistor element (2) due to its own heat generation is not hindered.

本実施の形態では、ケース(3)の内周壁(32)とカバー(4)により下リード(5)の下中間部(5b)及び上リード(6)の上中間部(6b)を挟持し、素子本体(20)の下面(23)の縁部(23b)をケース(3)の内周壁(32)の段部(39)に当接して、ケース(3)の底壁(31)の上方で素子本体(20)を保持する。下リード(5)及び上リード(6)とケース(3)の内周壁(32)の段部(39)とにより、ケース(3)の内部空洞(11)内で素子本体(20)をほぼ水平に支持することができる。ケース(3)にカバー(4)を装着したときに、ケース(3)の内周壁(32)とカバー(4)により下リード(5)の下中間部(5b)及び上リード(6)の上中間部(6b)を強固に挟持して、下リード(5)及び上リード(6)のみにより素子本体(20)をほぼ水平に保持し、ケース(3)の内周壁(32)の段部(39)と素子本体(20)の下面(23)の縁部(23b)とが当接せずに離間してもよい。この場合、ケース(3)の内周壁(32)の段部(39)を省略してもよい。素子本体(20)がケース(3)に全く接触しないので、ケース(3)を通じて素子本体(20)から基板(29)に伝達される熱量をより低減できる。   In the present embodiment, the lower middle portion (5b) of the lower lead (5) and the upper middle portion (6b) of the upper lead (6) are sandwiched between the inner peripheral wall (32) of the case (3) and the cover (4). The edge (23b) of the lower surface (23) of the element body (20) abuts on the step (39) of the inner peripheral wall (32) of the case (3), and the bottom wall (31) of the case (3) The element body (20) is held above. The lower lead (5) and the upper lead (6) and the step (39) of the inner peripheral wall (32) of the case (3) substantially assemble the element body (20) within the inner cavity (11) of the case (3). It can be supported horizontally. When the cover (4) is attached to the case (3), the lower middle part (5b) and the upper lead (6) of the lower lead (5) are covered by the inner peripheral wall (32) of the case (3) and the cover (4). The upper intermediate part (6b) is firmly held, the element body (20) is held almost horizontally only by the lower lead (5) and the upper lead (6), and the step of the inner peripheral wall (32) of the case (3) The portion (39) and the edge portion (23b) of the lower surface (23) of the element body (20) may be spaced apart from each other. In this case, the step (39) of the inner peripheral wall (32) of the case (3) may be omitted. Since the element body (20) does not contact the case (3) at all, the amount of heat transferred from the element body (20) to the substrate (29) through the case (3) can be further reduced.

図17に示すように、フロー方式の半田付け法により基板(29)にPTC装置(10)を取り付ける際に、ディスペンサ等の周知の接着剤塗布装置を使用して、基板(29)の下面(半田付け面)に接着剤が塗布される。次に、周知のチップマウンタ(表面実装機)により、基板(29)上にPTC装置(10)を配置し、基板(29)の下面とケース(3)の底面(3b)又は脚部(25)とが固定される。続いて、図示しないが、基板(29)の実装面を下方に向けて、液状化した半田が貯留される半田槽上に基板(29)を搬送する。半田槽では、ポンプにより液状半田をノズルから上方に噴出して半田噴流が形成され、基板(29)の実装面を半田噴流の頂部に接触させて基板(29)を通過させることにより、半田噴流を通過した基板(29)の実装面に半田を付着させて、PTC装置(10)の下リード(5)及び上リード(6)と基板(29)の回路パターンとを電気的に接続することができる。   As shown in FIG. 17, when the PTC device (10) is attached to the substrate (29) by the flow type soldering method, the lower surface (29) of the substrate (29) is used by using a known adhesive application device such as a dispenser. An adhesive is applied to the soldering surface. Next, the PTC device (10) is placed on the substrate (29) by a known chip mounter (surface mounter), and the bottom surface of the substrate (29) and the bottom surface (3b) or leg (25) of the case (3). ) And are fixed. Subsequently, although not shown in the drawings, the board (29) is transported onto a solder tank in which liquefied solder is stored with the mounting surface of the board (29) facing downward. In the solder bath, liquid solder is ejected upward from the nozzle by the pump to form a solder jet, and the solder jet is formed by allowing the mounting surface of the substrate (29) to contact the top of the solder jet and passing the substrate (29). Solder is attached to the mounting surface of the substrate (29) that has passed through, and the lower lead (5) and upper lead (6) of the PTC device (10) are electrically connected to the circuit pattern of the substrate (29). Can do.

図18及び図19は、リフロー方式により基板(29)にPTC装置(10)を半田付けする本発明の別の実施の形態を示す。図18に示すPTC装置(10)では、下リード(5)は、素子本体(20)の下電極(21)に電気的に接続される下内接部(5a)と、下内接部(5a)から下方に直角に折曲される下中間部(5b)と、下中間部(5b)から更に下方に延伸してパッケージ(1)の外側に導出される下導出部(5c)とを備える。同様に、上リード(6)は、上電極(22)に電気的に接続される上内接部(6a)と、上内接部(6a)から下方に直角に折曲される上中間部(6b)と、上中間部(6b)から更に下方に延伸してパッケージ(1)の外側に導出される上導出部(6c)とを備える。実装の際に、両面基板(29)の実装面側のランド部上に半田ペースト(34)が印刷され、チップマウンタにより、PTC装置(10)の下リード(5)及び上リード(6)を基板(29)のスルーホール(30)に挿入して、PTC装置(10)は、基板(29)上に配置される。次に、周知のリフロー炉内で、基板(29)とPTC装置(10)とを加熱し、図19に示すように、溶融した半田ペースト(34)により、基板(29)のスルーホール(30)に挿入される下リード(5)の下導出部(5c)及び上リード(6)の上導出部(6c)は、基板(29)の配線パターン(29a)に半田付けされる。これにより、PTC装置(10)の下リード(5)及び上リード(6)と基板(29)の回路パターン(29a)とを電気的に接続することができる。リフロー方式の代わりにフロー方式の半田付け法に図18に示すPTC装置(10)を適用してもよい。   18 and 19 show another embodiment of the present invention in which the PTC device (10) is soldered to the substrate (29) by the reflow method. In the PTC device (10) shown in FIG. 18, the lower lead (5) includes a lower inscribed portion (5a) electrically connected to the lower electrode (21) of the element body (20), and a lower inscribed portion ( A lower intermediate portion (5b) bent at a right angle downward from 5a) and a lower lead-out portion (5c) extending further downward from the lower intermediate portion (5b) and led out of the package (1) Prepare. Similarly, the upper lead (6) includes an upper inscribed portion (6a) electrically connected to the upper electrode (22) and an upper intermediate portion bent at a right angle downward from the upper inscribed portion (6a). (6b) and an upper lead-out portion (6c) that extends further downward from the upper middle portion (6b) and is led out of the package (1). At the time of mounting, the solder paste (34) is printed on the land portion on the mounting surface side of the double-sided substrate (29), and the lower lead (5) and the upper lead (6) of the PTC device (10) are attached by the chip mounter. The PTC device (10) is placed on the substrate (29) by being inserted into the through hole (30) of the substrate (29). Next, the substrate (29) and the PTC device (10) are heated in a well-known reflow furnace, and as shown in FIG. 19, the molten solder paste (34) is used to pass through holes (30 The lower lead-out portion (5c) of the lower lead (5) and the upper lead-out portion (6c) of the upper lead (6) to be inserted into the wiring pattern (29a) of the substrate (29) are soldered. Thereby, the lower lead (5) and upper lead (6) of the PTC device (10) and the circuit pattern (29a) of the substrate (29) can be electrically connected. Instead of the reflow method, a PTC device (10) shown in FIG. 18 may be applied to a flow method soldering method.

本実施の形態のPTC装置(10)では、ケース(3)内の段部(39)により、ケース(3)の底壁(31)と素子本体(20)の下面(23)の中央部(23a)との間に下間隙(7)を形成し、ケース(3)の内周壁(32)にカバー(4)を装着して、カバー(4)の頂壁(41)と素子本体(20)との間に上間隙(8)を形成し、ケース(3)の底面(3b)から突出する脚部(25)により、ケース(3)の底面(3b)と基板(29)との間に空間(40)を形成することができる。これにより、パッケージ(1)を通じて素子本体(20)から基板(29)に伝達される熱量を低減して、サーミスタ素子(2)の許容動作特性の変動を抑制できる。また、下リード(5)及び上リード(6)は、ケース(3)の外側から下方に折曲し、ケース(3)の内周壁(32)とカバー(4)との間を通過してパッケージ(1)の外側に導出されるので、ケース(3)の内部空洞(11)と外部との沿面距離が延長されて、ケース(3)の内部空洞(11)内への溶融半田の侵入を抑制できると共に、基板(29)からの熱的影響を軽減できる。このように、ラジアルリードを有する既存の無パッケージ型サーミスタと同等の許容動作特性を示すパッケージ封入型のPTC装置(10)を形成することができる。

Figure 2013030749
In the PTC device (10) of the present embodiment, the step (39) in the case (3) causes the bottom wall (31) of the case (3) and the center portion (23) of the lower surface (23) of the element body (20) ( 23a), a lower gap (7) is formed, the cover (4) is attached to the inner peripheral wall (32) of the case (3), and the top wall (41) of the cover (4) and the element body (20 ) Between the bottom surface (3b) of the case (3) and the substrate (29) by the legs (25) protruding from the bottom surface (3b) of the case (3). A space (40) can be formed. As a result, the amount of heat transmitted from the element body (20) to the substrate (29) through the package (1) can be reduced, and fluctuations in the allowable operating characteristics of the thermistor element (2) can be suppressed. The lower lead (5) and the upper lead (6) are bent downward from the outside of the case (3) and pass between the inner peripheral wall (32) of the case (3) and the cover (4). Since it is led out of the package (1), the creepage distance between the internal cavity (11) of the case (3) and the outside is extended, and the molten solder enters the internal cavity (11) of the case (3). Can be suppressed, and the thermal influence from the substrate (29) can be reduced. In this way, it is possible to form a package-enclosed PTC device (10) that exhibits an allowable operating characteristic equivalent to that of an existing non-packaged thermistor having radial leads.
Figure 2013030749

表2は、3個のPTC試料A,B及びCについて電圧印加(起動)時T0から最大電流値Imaxの半値(Imax×1/2)に低下する時点T1までの時間(T1−T0)を測定したデータを示す。PTC試料A、B及びCは、いずれも1.8Ωの素子抵抗値を有するが、Aは、下間隙(7)、周間隙(8)及び上間隙(9)を含む内部空隙を形成した本発明によるパッケージ封入型PTCの動作時間、Bは、パッケージの下間隙(7)、周間隙(8)及び上間隙(9)内に充填したエポキシ樹脂によりサーミスタ素子を包囲したパッケージ封入型PTCの動作時間、及びCは、従来のラジアルリードを有する無パッケージ型PTCの動作時間を示す。PTC試料Aは、Cと同等の動作時間を示すが、Bは、パッケージ内の熱容量が増加しかつ外部に伝導される熱量が増大して、室温時の許容動作時間(1.0〜3.0秒)と低温時の許容動作時間(40秒以内)を満足しない。 Table 2 shows the time (T from time T 0 when voltage is applied (start-up) to time point T 1 when the PTC samples A, B and C drop to half the maximum current value I max (I max × 1/2). 1 -T 0 ) is measured data. PTC samples A, B and C all have an element resistance value of 1.8Ω, but A is a book in which an internal gap including a lower gap (7), a circumferential gap (8) and an upper gap (9) is formed. The operation time of the package-enclosed PTC according to the invention, B is the operation of the package-enclosed PTC in which the thermistor element is surrounded by the epoxy resin filled in the lower gap (7), the circumferential gap (8) and the upper gap (9) of the package Time and C indicate the operation time of a packageless PTC having a conventional radial lead. PTC sample A exhibits an operating time equivalent to C, but B increases the heat capacity in the package and increases the amount of heat conducted to the outside, so that the allowable operating time at room temperature (1.0-3. 0 seconds) and the allowable operating time at low temperatures (within 40 seconds).

本実施の形態による作用効果を列挙すれば次の通りである。
[1] サーミスタ素子(2)をパッケージ(1)内に収容して、ラジアルリードを有する無パッケージ型と同等の動特性を有するパッケージ封入型サーミスタを形成することができる。
[2] サーミスタ素子(2)は、ケース(3)の底壁(31)及び内周壁(32)に対してそれぞれ下間隙(7)及び周間隙(8)を形成し、カバー(4)の頂壁(41)に対して上間隙(9)を形成するように配置されるので、下間隙(7)、周間隙(8)及び上間隙(9)内に保持される各空気層並びにケース(3)の底壁(31)、ケース(3)の内周壁(32)とカバー(4)の外周壁(42)との二重壁構造及びカバー(4)の頂壁(41)により、サーミスタ素子(2)からパッケージ(1)及び基板に伝導する熱伝達を十分に抑制することができる。
[3] 下リード(5)の下中間部(5b)及び上リード(6)の上中間部(6b)は、ケース(3)の外側から下方に折曲し、ケース(3)の内周壁(32)とカバー(4)との間を通過してパッケージ(1)の外側に導出されるので、ケース(3)の内部空洞(11)と外部との沿面距離が延長されて、ケース(3)の内部空洞(11)内への溶融半田の侵入を抑制できると共に、基板からの熱的影響を軽減できる。
[4] ケース(3)の内周壁(32)とカバー(4)の外周壁(42)との二重壁構造によりサーミスタ素子(2)の側面(26)を周辺環境から遮断できる。
[5] 内周壁(32)と外周壁(42)との面接触により、パッケージ(1)内部への溶融半田の侵入を確実に遮断できる。
It is as follows if the effect by this Embodiment is enumerated.
[1] The thermistor element (2) can be accommodated in the package (1) to form a packaged thermistor having the same dynamic characteristics as the non-package type having radial leads.
[2] The thermistor element (2) forms a lower gap (7) and a circumferential gap (8) with respect to the bottom wall (31) and the inner circumferential wall (32) of the case (3), respectively. Since it is arranged to form an upper gap (9) with respect to the top wall (41), each air layer and case held in the lower gap (7), the circumferential gap (8) and the upper gap (9) Due to the double wall structure of the bottom wall (31) of (3), the inner peripheral wall (32) of the case (3) and the outer peripheral wall (42) of the cover (4) and the top wall (41) of the cover (4), Heat transfer conducted from the thermistor element (2) to the package (1) and the substrate can be sufficiently suppressed.
[3] The lower middle portion (5b) of the lower lead (5) and the upper middle portion (6b) of the upper lead (6) are bent downward from the outside of the case (3), and the inner peripheral wall of the case (3) Since (32) and the cover (4) are passed through and led out of the package (1), the creepage distance between the internal cavity (11) of the case (3) and the outside is extended, and the case ( Intrusion of molten solder into the internal cavity (11) of 3) can be suppressed, and thermal influence from the substrate can be reduced.
[4] The side surface (26) of the thermistor element (2) can be shielded from the surrounding environment by the double wall structure of the inner peripheral wall (32) of the case (3) and the outer peripheral wall (42) of the cover (4).
[5] By the surface contact between the inner peripheral wall (32) and the outer peripheral wall (42), the penetration of the molten solder into the package (1) can be surely blocked.

本発明の実施の形態は、前記の各実施の形態に限定されず、更に種々の変更が可能である。最適かつ好適と現在思われる実施の形態について図示の目的で本発明を詳細に説明したが、本発明の実施の形態は、発明の精神及び特許請求の範囲に包含される種々の修正及び変更が可能であるから、前記実施の形態のみに本発明を限定して解釈すべきではない。
本発明を適用する温度依存性半導体装置は、正特性サーミスタに限定されず、例えば、温度の上昇に対して抵抗が減少するNTCサーミスタ又は所定温度を超えると急激に抵抗が減少するCTRサーミスタに本発明を適用してもよい。また、チタン酸バリウムに添加物を加えたセラミックPTC若しくはポリマー中にカーボンブラック等の導電性粒子を分散させたポリマーPTC等の他のサーミスタ又は温度依存性素子に本発明を適用してもよい。図示しないが、円形又は楕円形等、角形以外のケース及びカバーを形成してもよい。
図示する実施の形態では、ケース(3)の底壁(31)と内周壁(32)及びカバー(4)の頂壁(41)と外周壁(42)をそれぞれ直角に接続する例を示すが、直角以外の角度、90度〜60度の範囲、例えば、角度85度でケース(3)の底壁(31)と一対の側壁(17,18)を含む内周壁(32)及びカバー(4)の頂壁(41)と外周壁(42)を全体的に又は部分的にそれぞれほぼ同一の傾斜角度で接続することもできる。
また、ケース(3)の内周壁(32)及び/又はカバー(4)の外周壁(42)の厚さを変更してもよい。例えば、ケース(3)の底壁(31)から上方向に内周壁(32)を徐々に肉薄に形成し、カバー(4)の頂壁(41)から下方向に外周壁(42)を徐々に肉薄に形成して、ケース(3)にカバー(4)を容易に着脱することができる。
Embodiments of the present invention are not limited to the above-described embodiments, and various modifications can be made. Although the present invention has been described in detail for purposes of illustration with respect to embodiments that are presently considered to be optimal and preferred, the embodiments of the present invention are subject to various modifications and changes that fall within the spirit of the invention and the scope of the claims. Since this is possible, the present invention should not be construed as being limited to the above-described embodiment.
The temperature-dependent semiconductor device to which the present invention is applied is not limited to a positive temperature coefficient thermistor. For example, the temperature-dependent semiconductor device is an NTC thermistor whose resistance decreases with increasing temperature or a CTR thermistor whose resistance decreases rapidly when a predetermined temperature is exceeded. The invention may be applied. Further, the present invention may be applied to other thermistors such as a ceramic PTC obtained by adding an additive to barium titanate or a polymer PTC in which conductive particles such as carbon black are dispersed in a polymer or a temperature-dependent element. Although not shown, a case and a cover other than a square, such as a circle or an ellipse, may be formed.
In the illustrated embodiment, an example is shown in which the bottom wall (31) and the inner peripheral wall (32) of the case (3) and the top wall (41) and the outer peripheral wall (42) of the cover (4) are connected at right angles. The inner peripheral wall (32) and the cover (4) including a bottom wall (31) and a pair of side walls (17, 18) of the case (3) at an angle other than a right angle, in a range of 90 degrees to 60 degrees, for example, an angle of 85 degrees. ) Top wall (41) and outer peripheral wall (42) may be connected in whole or in part at substantially the same inclination angle.
Further, the thickness of the inner peripheral wall (32) of the case (3) and / or the outer peripheral wall (42) of the cover (4) may be changed. For example, the inner peripheral wall (32) is gradually thinned upward from the bottom wall (31) of the case (3), and the outer peripheral wall (42) is gradually decreased downward from the top wall (41) of the cover (4). The cover (4) can be easily attached to and detached from the case (3).

本発明は、車載用ドアミラー制御装置、ヒータの発熱温度制御装置、リチウムイオン電池等の二次電池のリセッタブルヒューズ等、温度検出用センサ、電源回路の突入電流減少用装置、電流制限装置又は回路保護装置等の種々のパッケージ封入型温度依存性抵抗体に適用することができる。   The present invention relates to a vehicle-mounted door mirror control device, a heating temperature control device for a heater, a resettable fuse for a secondary battery such as a lithium ion battery, a temperature detection sensor, an inrush current reduction device for a power supply circuit, a current limiting device or a circuit. The present invention can be applied to various package-encapsulated temperature-dependent resistors such as a protection device.

(1)・・パッケージ、 (2)・・サーミスタ素子(PTC素子)、 (3)・・ケース、 (3b)・・底面、 (4)・・カバー、 (5)・・下リード、 (5a)・・下内接部、 (5b)・・下中間部、 (5c)・・下導出部、 (6)・・上リード、 (6a)・・上内接部、 (6b)・・上中間部、 (6c)・・上導出部、 (7)・・下間隙、 (8)・・周間隙、 (9)・・上間隙、 (10)・・パッケージ封入型サーミスタ(PTC装置)、 (11)・・内部空洞、 (14)・・内割溝、 (15)・・外割溝、 (20)・・素子本体、 (21)・・下電極、 (22)・・上電極、 (23b)・・縁部、 (25)・・脚部、 (31)・・底壁、 (32)・・内周壁、 (37)・・開放部、 (38)・・切欠部、 (38a)・・下切欠部、 (38b)・・上切欠部、 (39)・・段部、 (41)・・頂壁、 (42)・・外周壁、 (50)・・爪、 (51)・・傾斜面、 (52)・・係止面、 (53)・・開口部、   (1) ・ ・ Package, (2) ・ Thermistor element (PTC element), (3) ・ Case, (3b) ・ ・ Bottom, (4) ・ Cover, (5) ・ Lower lead, (5a ) ・ ・ Lower inscribed part, (5b) ・ ・ Lower middle part, (5c) ・ ・ Lower lead-out part, (6) ・ ・ Upper lead, (6a) ・ ・ Upper inscribed part, (6b) ・ ・ Upper Middle part, (6c) ・ ・ Upper lead part, (7) ・ ・ Lower gap, (8) ・ ・ Gap, (9) ・ ・ Upper gap, (10) ・ ・ Package enclosed thermistor (PTC device), (11) ・ ・ Internal cavity, (14) ・ ・ Inner split groove, (15) ・ ・ Outer split groove, (20) ・ ・ Element body, (21) ・ ・ Lower electrode, (22) ・ ・ Upper electrode, (23b) ・ ・ Edge, (25) ・ ・ Leg, (31) ・ ・ Bottom wall, (32) ・ ・ Inner wall, (37) ・ ・ Open part, (38) ・ ・ Notch, (38a ) ・ ・ Lower cutout, (38b) ・ ・ Upper cutout, (39) ・ ・ Step, (41) ・ ・ Top wall, (42) ・ ・ Outer wall, (50) ・ Claw, (51) ..Inclined surface, (52) ... Locking surface, (53) Part,

Claims (18)

電気絶縁性のパッケージと、パッケージ内に配置される温度依存性のサーミスタ素子とを備え、
パッケージは、底壁、底壁の周囲に接続される内周壁及び底壁と内周壁とにより形成される内部空洞を有するケースと、ケースの内部空洞を覆う頂壁及び頂壁の周囲に接続されかつケースの内周壁の外側に配置される外周壁を有するカバーとを備え、
サーミスタ素子は、ケースの底壁及び内周壁に対してそれぞれ下間隙及び周間隙を形成し、カバーの頂壁に対して上間隙を形成するように配置されることを特徴とするパッケージ封入型サーミスタ。
An electrically insulating package and a temperature-dependent thermistor element disposed in the package;
The package is connected to the bottom wall, a case having an inner peripheral wall connected to the periphery of the bottom wall and an inner cavity formed by the bottom wall and the inner peripheral wall, and a top wall covering the inner cavity of the case and the periphery of the top wall. And a cover having an outer peripheral wall disposed outside the inner peripheral wall of the case,
The thermistor element is arranged so as to form a lower gap and a circumferential gap with respect to the bottom wall and the inner peripheral wall of the case, respectively, and an upper gap with respect to the top wall of the cover. .
サーミスタ素子は、一対の電極と、各電極に固着される一対のリードとを備え、
ケースの内周壁に形成される一対の切欠部から一対のリードを導出し、更に、ケースとカバーとの間に一対のリードを挟持する請求項1に記載のパッケージ封入型サーミスタ。
The thermistor element includes a pair of electrodes and a pair of leads fixed to each electrode,
The package-enclosed thermistor according to claim 1, wherein a pair of leads are led out from a pair of notches formed on an inner peripheral wall of the case, and the pair of leads are further sandwiched between the case and the cover.
サーミスタ素子は、一対の電極を有する素子本体を備え、
一対の電極は、下電極と上電極とを有し、
一対のリードは、素子本体の下電極に電気的に接続される下内接部を有する金属製の下リードと、素子本体の上電極に電気的に接続される上内接部を有する金属製の上リードとを備え、
ケースの内周壁の切欠部を通じて下リードの下内接部及び上リードの上内接部を内周壁の外側に延伸させる請求項2に記載のパッケージ封入型サーミスタ。
The thermistor element includes an element body having a pair of electrodes,
The pair of electrodes has a lower electrode and an upper electrode,
The pair of leads is made of a metal lower lead having a lower inscribed part electrically connected to the lower electrode of the element body, and a metal having an upper inscribed part electrically connected to the upper electrode of the element body. With an upper lead,
The package-enclosed thermistor according to claim 2, wherein the lower inscribed portion of the lower lead and the upper inscribed portion of the upper lead are extended to the outside of the inner peripheral wall through a cutout portion of the inner peripheral wall of the case.
下リードは、下内接部から下方に折曲する下中間部を有し、
上リードは、上内接部から下方に折曲する上中間部を有し、
下中間部及び上中間部は、ケースの内周壁とカバーとの間を通過してパッケージの外部に導出され、
ケースに被着されるカバーは、ケースの内周壁を外側から包囲し、サーミスタ素子、ケースの内部空洞及び開放部を覆う請求項3に記載のパッケージ封入型サーミスタ。
The lower lead has a lower intermediate portion that bends downward from the lower inscribed portion,
The upper lead has an upper intermediate portion that bends downward from the upper inscribed portion,
The lower intermediate portion and the upper intermediate portion pass between the inner peripheral wall of the case and the cover and are led out of the package.
The package-enclosed thermistor according to claim 3, wherein the cover attached to the case surrounds the inner peripheral wall of the case from the outside and covers the thermistor element, the internal cavity of the case, and the open portion.
ケースの内周壁とカバーにより挟持される下リードの下中間部及び上リードの上中間部は、下間隙を介してケースの底壁の上方に素子本体を保持する請求項4に記載のパッケージ封入型サーミスタ。   The package encapsulation according to claim 4, wherein the lower middle portion of the lower lead and the upper middle portion of the upper lead held between the inner peripheral wall of the case and the cover hold the element body above the bottom wall of the case via the lower gap. Type thermistor. ケースの底壁より高い位置で内周壁に少なくとも1つの段部を形成し、
素子本体の縁部を段部に当接させる請求項2に記載のパッケージ封入型サーミスタ。
Forming at least one step on the inner peripheral wall at a position higher than the bottom wall of the case;
The packaged thermistor according to claim 2, wherein the edge of the element body is brought into contact with the stepped part.
下リードは、下中間部から直角に折曲される下導出部を有し、
上リードは、上中間部から直角に折曲される上導出部を有し、
ケースは、内周壁の外側に形成される内割溝を有し、
カバーは、ケースの内割溝に対応する位置に形成される外割溝を内側に有し、
内割溝と外割溝とを対向させて配置して形成される一対の通路内に下リードの下中間部及び上リードの上中間部を配置して、下リードの下導出部及び上リードの上導出部をパッケージから導出させる請求項4に記載のパッケージ封入型サーミスタ。
The lower lead has a lower lead-out portion bent at a right angle from the lower middle portion,
The upper lead has an upper lead-out portion bent at a right angle from the upper middle portion,
The case has an inner dividing groove formed on the outer side of the inner peripheral wall,
The cover has an outer groove formed inside at a position corresponding to the inner groove of the case,
A lower middle portion of the lower lead and an upper middle portion of the upper lead are disposed in a pair of passages formed by arranging the inner and outer grooves facing each other, and the lower lead-out portion and the upper lead of the lower lead The packaged thermistor according to claim 4, wherein the upper lead-out part is led out from the package.
ケースの内周壁に形成される切欠部は、底壁より高い位置の内周壁に形成される下切欠部と、下切欠部より高い位置の内周壁に形成される上切欠部とを備え、
下リードの下内接部は、ケースの内周壁の下切欠部を通じてケースの外側に延伸し、
上リードの上中間部は、ケースの内周壁の上切欠部を通じてケースの外側に延伸し、
上リードの上中間部は、下リードの下中間部より垂直方向に長い請求項2に記載のパッケージ封入型サーミスタ。
The notch formed on the inner peripheral wall of the case includes a lower notch formed on the inner peripheral wall at a position higher than the bottom wall, and an upper notch formed on the inner peripheral wall at a position higher than the lower notch,
The lower inscribed part of the lower lead extends to the outside of the case through the lower notch of the inner peripheral wall of the case,
The upper middle part of the upper lead extends to the outside of the case through the upper notch on the inner peripheral wall of the case,
3. The packaged thermistor according to claim 2, wherein the upper middle portion of the upper lead is longer in the vertical direction than the lower middle portion of the lower lead.
ケースの底面に設けた少なくとも1つの脚部より下方に、下リードの下導出部と、上リードの上導出部とを突出させる請求項7に記載のパッケージ封入型サーミスタ。   The package-enclosed thermistor according to claim 7, wherein a lower lead-out portion of the lower lead and an upper lead-out portion of the upper lead protrude below the at least one leg portion provided on the bottom surface of the case. 傾斜面と、傾斜面の下端に形成される係止面とを有する少なくとも1つの爪をケースの内周壁の外側に設け、
カバーをケースに装着する際に、爪の傾斜面に沿ってカバーを滑動させた後に、カバー自身の弾力を利用して、カバーに形成した開口部を爪の係止面にスナップ作用で係止させる請求項2に記載のパッケージ封入型サーミスタ。
Providing at least one claw having an inclined surface and a locking surface formed at the lower end of the inclined surface outside the inner peripheral wall of the case;
When attaching the cover to the case, after sliding the cover along the slanted surface of the nail, use the elasticity of the cover itself to lock the opening formed in the cover to the nail locking surface by snap action The packaged thermistor according to claim 2, wherein
底壁、底壁の周囲に接続される内周壁及び底壁と内周壁とにより形成される内部空洞を有するケースと、頂壁及び頂壁の周囲に接続される外周壁を有するカバーとを備える電気絶縁性のパッケージを準備する工程と、
ケースの底壁と温度依存性のサーミスタ素子との間に下間隙を形成しかつケースの内周壁とサーミスタ素子との間に周間隙を形成して、ケースの内部空洞内にサーミスタ素子を配置する工程と、
カバーをケースに装着して、カバーの頂壁によりケースの内部空洞を覆うと共に、ケースの内周壁の外側にカバーの外周壁を配置する工程とを含むことを特徴とするパッケージ封入型サーミスタの製法。
A bottom wall, an inner peripheral wall connected to the periphery of the bottom wall, a case having an inner cavity formed by the bottom wall and the inner peripheral wall, and a cover having an outer peripheral wall connected to the periphery of the top wall and the top wall Preparing an electrically insulating package; and
A thermistor element is disposed in the internal cavity of the case by forming a lower gap between the bottom wall of the case and the temperature-dependent thermistor element and a circumferential gap between the inner peripheral wall of the case and the thermistor element. Process,
A method of manufacturing a package-enclosed thermistor, comprising: attaching a cover to the case; covering the inner cavity of the case with a top wall of the cover; and disposing the outer peripheral wall of the cover outside the inner peripheral wall of the case. .
サーミスタ素子は、一対の電極と、各電極に固着される一対のリードとを備え、
ケースの内周壁に形成される一対の切欠部から一対のリードを導出する状態でケース内にサーミスタ素子を配置する工程とを含む請求項11に記載のパッケージ封入型サーミスタの製法。
The thermistor element includes a pair of electrodes and a pair of leads fixed to each electrode,
The method for producing a package-enclosed thermistor according to claim 11, further comprising a step of disposing a thermistor element in the case in a state in which the pair of leads are led out from the pair of notches formed in the inner peripheral wall of the case.
ケースとカバーとの間に一対のリードを挟持する状態でカバーをケースに被着する工程を含む請求項12に記載のパッケージ封入型サーミスタの製法。   The method for producing a package-enclosed thermistor according to claim 12, comprising a step of attaching the cover to the case in a state where a pair of leads is sandwiched between the case and the cover. サーミスタ素子は、一対の電極を有する素子本体を備え、
一対の電極は、下電極と上電極とを有し、
一対のリードは、素子本体の下電極に電気的に接続される下内接部を有する金属製の下リードと、素子本体の上電極に電気的に接続される上内接部を有する金属製の上リードとを備え、
ケースの内周壁の切欠部を通じて下リードの下内接部及び上リードの上内接部を内周壁の外側に延伸させる工程を含む請求項12又は13に記載のパッケージ封入型サーミスタの製法。
The thermistor element includes an element body having a pair of electrodes,
The pair of electrodes has a lower electrode and an upper electrode,
The pair of leads is made of a metal lower lead having a lower inscribed part electrically connected to the lower electrode of the element body, and a metal having an upper inscribed part electrically connected to the upper electrode of the element body. With an upper lead,
The method for producing a packaged thermistor according to claim 12 or 13, comprising a step of extending a lower inscribed portion of the lower lead and an upper inscribed portion of the upper lead to the outside of the inner peripheral wall through a cutout portion of the inner peripheral wall of the case.
下リードの下内接部から下方に折曲する下中間部を下リードに設け、上リードの上内接部から下方に折曲する上中間部を上リードに設ける工程と、
ケースの内周壁とカバーとの間を通過する下中間部及び上中間部をパッケージの外部に導出させて、カバーによりケースの内周壁を外側から包囲し、サーミスタ素子、ケースの内部空洞及び開放部を覆ってケースにカバーを被着する工程とを含む請求項14に記載のパッケージ封入型サーミスタの製法。
Providing the lower lead with a lower intermediate portion bent downward from the lower inscribed portion of the lower lead, and providing the upper intermediate portion bent upward from the upper inscribed portion of the upper lead with the upper lead;
The lower intermediate part and the upper intermediate part that pass between the inner peripheral wall of the case and the cover are led out of the package, the cover surrounds the inner peripheral wall of the case from the outside, the thermistor element, the internal cavity of the case, and the open part The method for producing a package-enclosed thermistor according to claim 14, further comprising: covering the case with a cover.
ケースとカバーにより下リードの下中間部及び上リードの上中間部を挟持して、ケースに素子本体の下面の中央部が接触しない状態でケースの底壁の上方に素子本体を保持する工程を含む請求項15に記載のパッケージ封入型サーミスタの製法。   The process of holding the element body above the bottom wall of the case with the case and cover sandwiching the lower middle part of the lower lead and the upper middle part of the upper lead so that the center part of the lower surface of the element body does not contact the case A process for producing a packaged thermistor according to claim 15. ケースの底壁より高い位置の内周壁に少なくとも1つの段部を形成する工程と、
ケースの段部に素子本体の縁部を当接させて、ケースにサーミスタ素子を装着する工程とを含む請求項11〜16の何れか1項に記載のパッケージ封入型サーミスタの製法。
Forming at least one step on the inner peripheral wall at a position higher than the bottom wall of the case;
The method for producing a package-enclosed thermistor according to claim 11, further comprising: attaching a thermistor element to the case by bringing the edge of the element body into contact with the step of the case.
傾斜面と、傾斜面の下端に配置される係止面とを有する少なくとも1つの爪をケースの内周壁の外側に形成すると共に、ケースの内周壁の爪に対応する位置の開口部をカバーに形成する工程と、
爪の傾斜面に沿ってカバーを滑動させた後に、カバー自身の弾力を利用して、カバーに形成した開口部を爪の係止面にスナップ作用で係止させて、カバーをケースに装着する工程とを含む請求項11〜17の何れか1項に記載のパッケージ封入型サーミスタの製法。
At least one claw having an inclined surface and a locking surface disposed at the lower end of the inclined surface is formed outside the inner peripheral wall of the case, and an opening at a position corresponding to the claw on the inner peripheral wall of the case is used as a cover Forming, and
After sliding the cover along the inclined surface of the nail, the cover is attached to the case by snapping the opening formed in the cover to the locking surface of the nail by using the elasticity of the cover itself. The method for producing a packaged thermistor according to claim 11, further comprising a step.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014202229A1 (en) 2013-02-20 2014-08-21 Yazaki Corporation Shielded connector design
KR102284961B1 (en) * 2021-03-12 2021-08-03 스마트전자 주식회사 Circuit protecting device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014202229A1 (en) 2013-02-20 2014-08-21 Yazaki Corporation Shielded connector design
KR102284961B1 (en) * 2021-03-12 2021-08-03 스마트전자 주식회사 Circuit protecting device
EP4057301A1 (en) * 2021-03-12 2022-09-14 Smart Electronics, Inc. Circuit protection device
CN115087258A (en) * 2021-03-12 2022-09-20 斯玛特电子公司 Circuit protection device
JP2022140314A (en) * 2021-03-12 2022-09-26 スマート エレクトロニクス インク Circuit protection device
US11776716B2 (en) 2021-03-12 2023-10-03 Smart Electronics Inc. Circuit protection device

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