JP2013021135A - Light-emitting element driving circuit and light-emitting element abnormality detection method - Google Patents

Light-emitting element driving circuit and light-emitting element abnormality detection method Download PDF

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JP2013021135A
JP2013021135A JP2011153331A JP2011153331A JP2013021135A JP 2013021135 A JP2013021135 A JP 2013021135A JP 2011153331 A JP2011153331 A JP 2011153331A JP 2011153331 A JP2011153331 A JP 2011153331A JP 2013021135 A JP2013021135 A JP 2013021135A
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light emitting
emitting element
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Naoshi Nishimura
直士 西村
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Hotalux Ltd
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NEC Lighting Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting element driving circuit and a light-emitting element abnormality detection method capable of improving the accuracy of abnormality detection of a light-emitting element.SOLUTION: A light-emitting element driving circuit 1 comprises element arrays 10a and 10b each including the same number of two or more light-emitting elements connected in series. The element arrays 10a and 10b are connected with each other in parallel. A comparison circuit 30 detects a voltage difference between the element arrays 10a and 10b on the basis of the respective voltages at center light-emitting element interconnection parts or at one ends of the center light-emitting elements of the element arrays 10a and 10b. The comparison circuit 30 determines that there are abnormalities in any of the light-emitting elements in the element arrays 10a and 10b in the case that the voltage difference of the element arrays 10a and 10b exceeds a predetermined range. The comparison circuit 30 notifies the outside of the light-emitting element driving circuit 1 of determination results.

Description

本発明は、発光素子駆動回路および発光素子異常検出方法に関する。   The present invention relates to a light emitting element driving circuit and a light emitting element abnormality detecting method.

発光ダイオード(以下、LEDと記す)などの発光素子は様々な機器に用いられており、LEDの劣化、個別特性、故障、不具合などの異常を検出する技術が開発されている。異常の検出方法としては、各LEDに流れる電流を、抵抗を用いて電圧変換し、その電圧が所定の範囲内にあるか否かを判定する方法や、LEDに流れる電流の合計を、抵抗を用いて電圧変換し、その電圧が所定の範囲内にあるか否かを判定する方法がある。   Light emitting elements such as light emitting diodes (hereinafter referred to as LEDs) are used in various devices, and techniques for detecting abnormalities such as LED degradation, individual characteristics, failures, and defects have been developed. As an abnormality detection method, the current flowing through each LED is converted into a voltage using a resistor, and it is determined whether or not the voltage is within a predetermined range. There is a method of converting voltage by using and determining whether or not the voltage is within a predetermined range.

特許文献1に開示されている発光素子駆動回路は、直列に接続された複数のLEDを含むLED列を複数備え、並列に接続された各LED列のカソード側の電圧の内、最も低い電圧を検出する。検出した電圧が基準電圧を下回る場合は、基準電圧と等しくなるように、各LED列にかかる電圧を制御する。   The light emitting element driving circuit disclosed in Patent Document 1 includes a plurality of LED strings including a plurality of LEDs connected in series, and has the lowest voltage among the voltages on the cathode side of each LED string connected in parallel. To detect. When the detected voltage is lower than the reference voltage, the voltage applied to each LED array is controlled so as to be equal to the reference voltage.

特許文献2に開示されている点灯装置は、LEDの両端電圧を検出し、検出した電圧が予めLEDの短絡判別用に規定した所定の値以下の場合には、LEDに流れる電流を制限する。   The lighting device disclosed in Patent Document 2 detects the voltage across the LED, and limits the current flowing through the LED when the detected voltage is equal to or less than a predetermined value that is defined in advance for determining short-circuiting of the LED.

特許文献3に開示されているLED照明保護回路は、直列に接続された複数のLEDから成るLED列を複数備え、並列に接続された各LED列の中点における電圧を2個のトランジスタで監視して、中点の電圧が所定の範囲を超えていることを検出すると、LEDに異常があると判定し、電流を停止する。   The LED lighting protection circuit disclosed in Patent Document 3 includes a plurality of LED strings composed of a plurality of LEDs connected in series, and monitors the voltage at the midpoint of each LED string connected in parallel with two transistors. When it is detected that the midpoint voltage exceeds the predetermined range, it is determined that the LED is abnormal, and the current is stopped.

特開2010−109006号公報JP 2010-109006 A 特開2010−129612号公報JP 2010-129612 A 特開2010−278039号公報JP 2010-278039 A

特許文献1、2、3に開示されている技術では、検出した電圧が所定の範囲にあるか否かに基づき、LEDの異常を検出している。LEDの順方向電圧は、例えば温度などのLEDの外部の影響を受けて変化する。LEDが正常であるにも関わらず、誤ってLEDに異常があると判定することを防ぐには、LEDの外部の影響による電圧変化の誤差を考慮し、正常とされる所定の範囲を、所望の範囲より広く設定しなければならない。そのため、例えば、多数の直列に接続されたLEDを備える回路において、1個のLEDがショートした場合の電圧変化のように、考慮された誤差より小さい変化については、異常として検出することができない。   In the techniques disclosed in Patent Documents 1, 2, and 3, an abnormality of the LED is detected based on whether or not the detected voltage is within a predetermined range. The forward voltage of the LED changes under the influence of the outside of the LED such as temperature. In order to prevent the LED from being erroneously determined to be abnormal even though the LED is normal, a predetermined range that is considered normal is desired in consideration of an error in voltage change due to an external influence of the LED. It must be set wider than the range. Therefore, for example, in a circuit including a large number of LEDs connected in series, a change smaller than the considered error cannot be detected as abnormal, such as a voltage change when one LED is short-circuited.

本発明は、上述の状況に鑑みてなされたものであり、発光素子の異常検出の精度を向上させる、発光素子駆動回路および発光素子異常検出方法を提供することを目的とする。   The present invention has been made in view of the above-described situation, and an object thereof is to provide a light emitting element drive circuit and a light emitting element abnormality detection method that improve the accuracy of abnormality detection of a light emitting element.

上記目的を達成するために、本発明の第1の観点に係る発光素子駆動回路は、
並列に接続される2以上の発光素子列であって、それぞれが1または2以上の直列に接続される同数の発光素子を含む発光素子列と、
任意の2の前記発光素子列について、1の前記発光素子列内の、任意の前記発光素子間または前記発光素子列のカソード側における電圧と、他方の前記発光素子列内の前記1の発光素子列内での電圧の検出位置と同じ位置における電圧との電圧差を検出する、電圧差検出手段と、
前記電圧差が所定の範囲を超えている場合に、前記2の発光素子列の内、いずれかの前記発光素子に異常があると判定する、異常判定手段と、
を備えることを特徴とする。
In order to achieve the above object, a light-emitting element driving circuit according to the first aspect of the present invention includes:
Two or more light emitting element arrays connected in parallel, each including one or two or more light emitting element arrays connected in series;
For any two of the light emitting element rows, the voltage on the cathode side of the light emitting element row in one light emitting element row or on the cathode side of the light emitting element row, and the first light emitting element in the other light emitting element row A voltage difference detection means for detecting a voltage difference with a voltage at the same position as the voltage detection position in the row;
An abnormality determining means for determining that any one of the light emitting elements in the two light emitting element arrays is abnormal when the voltage difference exceeds a predetermined range;
It is characterized by providing.

本発明の第2の観点に係る発光素子異常検出方法は、
並列に接続される2以上の発光素子列であって、それぞれが1または2以上の直列に接続される同数の発光素子を含む発光素子列を備える、発光素子駆動回路が行う、発光素子異常検出方法であって、
任意の2の前記発光素子列について、1の前記発光素子列内の、任意の前記発光素子間または前記発光素子列のカソード側における電圧と、他方の前記発光素子列内の前記1の発光素子列内での電圧の検出位置と同じ位置における電圧との電圧差を検出する、電圧差分検出ステップと、
前記電圧差が所定の範囲を超えている場合に、前記2の発光素子列の内、いずれかの前記発光素子に異常があると判定する、異常判定ステップと、
を備えることを特徴とする。
A light emitting element abnormality detection method according to a second aspect of the present invention includes:
Light emitting element abnormality detection performed by a light emitting element drive circuit, comprising two or more light emitting element arrays connected in parallel, each including one or two or more light emitting element arrays connected in series A method,
For any two of the light emitting element rows, the voltage on the cathode side of the light emitting element row in one light emitting element row or on the cathode side of the light emitting element row, and the first light emitting element in the other light emitting element row A voltage difference detection step for detecting a voltage difference with a voltage at the same position as the voltage detection position in the row;
When the voltage difference exceeds a predetermined range, an abnormality determination step for determining that any one of the light emitting elements in the two light emitting element arrays is abnormal;
It is characterized by providing.

本発明によれば、発光素子の異常検出の精度を向上させる、発光素子駆動回路および発光素子異常検出方法を提供することが可能となる。   ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to provide the light emitting element drive circuit and the light emitting element abnormality detection method which improve the precision of abnormality detection of a light emitting element.

本発明の実施の形態1に係る発光素子駆動回路の構成例を示すブロック図である。It is a block diagram which shows the structural example of the light emitting element drive circuit which concerns on Embodiment 1 of this invention. 本発明の実施の形態2に係る発光素子駆動回路の構成例を示すブロック図である。It is a block diagram which shows the structural example of the light emitting element drive circuit which concerns on Embodiment 2 of this invention.

以下、本発明の実施の形態について図面を参照して詳細に説明する。なお図中、同一または同等の部分には同一の符号を付す。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or equivalent parts are denoted by the same reference numerals.

(実施の形態1)
図1は、本発明の実施の形態1に係る発光素子駆動回路の構成例を示すブロック図である。発光素子駆動回路1(以下、駆動回路1と記す)は、発光素子であるLEDが直列に接続された発光素子列(以下、素子列と記す)10a、10bを備える。素子列10a、10bは並列に接続されている。素子列10a、10bにそれぞれ含まれるLEDの数は同じである。駆動回路1は、素子列10aの検出位置における電圧と、素子列10bの検出位置における電圧との電圧差に基づき、LEDの異常の有無を判定し、判定結果を駆動回路1の外部に通知する。駆動回路1の各部について以下に説明する。
(Embodiment 1)
FIG. 1 is a block diagram showing a configuration example of a light emitting element driving circuit according to Embodiment 1 of the present invention. The light emitting element driving circuit 1 (hereinafter referred to as the driving circuit 1) includes light emitting element arrays (hereinafter referred to as element arrays) 10a and 10b in which LEDs as light emitting elements are connected in series. The element rows 10a and 10b are connected in parallel. The number of LEDs included in each of the element arrays 10a and 10b is the same. The drive circuit 1 determines the presence / absence of an LED abnormality based on the voltage difference between the voltage at the detection position of the element array 10a and the voltage at the detection position of the element array 10b, and notifies the determination result to the outside of the drive circuit 1. . Each part of the drive circuit 1 will be described below.

コンデンサ21は、素子列10a、10bと並列に接続され、インダクタ22は、コンデンサ21および素子列10a、10bのカソード側と直列に接続され、他端は、N型MOSトランジスタ24(以下、NMOS24と記す)のドレインおよびダイオード23に接続されている。素子列10a、10bのカソード側は、比較回路30にも接続されている。NMOS24のソースは、接地されている。NMOS24のゲートは、ゲート電源26に接続されている。   The capacitor 21 is connected in parallel to the element rows 10a and 10b, the inductor 22 is connected in series to the cathode side of the capacitor 21 and the element rows 10a and 10b, and the other end is connected to an N-type MOS transistor 24 (hereinafter referred to as NMOS 24). And the diode 23. The cathode sides of the element rows 10a and 10b are also connected to the comparison circuit 30. The source of the NMOS 24 is grounded. The gate of the NMOS 24 is connected to the gate power supply 26.

コンデンサ21、インダクタ22、ダイオード23およびNMOS24により、直流電源25の電圧の降圧を行う。素子列10a、10bのアノード側には、降圧された電圧が供給される。   The voltage of the DC power supply 25 is stepped down by the capacitor 21, the inductor 22, the diode 23, and the NMOS 24. The stepped-down voltage is supplied to the anode side of the element rows 10a and 10b.

比較回路30は、素子列10a内の、中央のLED間または中央のLEDの一端における電圧を検出する。そして、素子列10b内の、素子列10a内での検出位置と同じ位置での電圧を検出する。同じ位置とは、同じLED間または同じLEDの一端を意味する。中央のLED間とは、その位置よりアノード側のLEDの数と、カソード側のLEDの数とが同じである位置を意味する。比較回路30は、素子列10a内の検出位置での電圧と、素子列10b内の検出位置での電圧に基づき、素子列10a、10bの電圧差を検出する。   The comparison circuit 30 detects a voltage between the central LEDs or one end of the central LED in the element array 10a. And the voltage in the same position as the detection position in the element row 10a in the element row 10b is detected. The same position means between the same LEDs or one end of the same LEDs. Between the central LEDs means a position where the number of LEDs on the anode side and the number of LEDs on the cathode side are the same from that position. The comparison circuit 30 detects the voltage difference between the element arrays 10a and 10b based on the voltage at the detection position in the element array 10a and the voltage at the detection position in the element array 10b.

素子列10a、10bの電圧差が所定の範囲を超えている場合には、比較回路30は、素子列10a、10b内の、いずれかのLEDに異常があると判定し、判定結果を駆動回路1の外部に通知する。所定の範囲を超えている場合とは、素子列10a、10bの電圧差が基準値を超えていることを意味する。所定の範囲は、例えば、LEDの個別特性による順方向電圧のばらつきを考慮して決定される。素子列10a、10bは共に、例えば温度などのLEDの外部からの影響を受けるので、所定の範囲を決定する際に、LEDの外部からの影響は考慮しなくともよい。   When the voltage difference between the element arrays 10a and 10b exceeds a predetermined range, the comparison circuit 30 determines that any one of the LEDs in the element arrays 10a and 10b is abnormal, and determines the determination result as a drive circuit. 1 is notified outside. The case where it exceeds the predetermined range means that the voltage difference between the element arrays 10a and 10b exceeds the reference value. The predetermined range is determined in consideration of variations in forward voltage due to individual characteristics of LEDs, for example. Since both the element arrays 10a and 10b are affected by the outside of the LED such as temperature, for example, it is not necessary to consider the influence from the outside of the LED when determining the predetermined range.

比較回路30は例えば以下のようにLEDの異常を検出する。素子列10aの電圧の検出位置より、アノード側に位置するLEDの1つが、短絡故障した場合には、検出位置における電圧は、大きくなる。一方、素子列10aの電圧の検出位置より、カソード側に位置するLEDの1つが、短絡故障した場合には、検出位置における電圧は、小さくなる。また、素子列10aの電圧の検出位置より、アノード側に位置するLEDの1つが、開放故障した場合には、検出位置における電圧は、小さくなる。一方、素子列10aの電圧の検出位置より、カソード側に位置するLEDの1つが、開放故障した場合には、検出位置における電圧は、大きくなる。   For example, the comparison circuit 30 detects an abnormality of the LED as follows. When one of the LEDs located on the anode side is short-circuited from the voltage detection position of the element array 10a, the voltage at the detection position is increased. On the other hand, when one of the LEDs located on the cathode side has a short-circuit failure from the voltage detection position of the element array 10a, the voltage at the detection position becomes small. Further, when one of the LEDs located on the anode side has an open failure from the voltage detection position of the element array 10a, the voltage at the detection position becomes small. On the other hand, when one of the LEDs located on the cathode side has an open failure from the voltage detection position of the element array 10a, the voltage at the detection position becomes large.

上述のように素子列10aの電圧の検出位置における電圧が変化すると、素子列10bの電圧の検出位置における電圧との電圧差が変化する。そして、素子列10a、10bの電圧差が基準値を超えると、比較回路30は素子列10a、10b内のいずれかのLEDに異常があると判定する。比較回路30は、判定結果を駆動回路1の外部に通知する。   As described above, when the voltage at the voltage detection position of the element row 10a changes, the voltage difference from the voltage at the voltage detection position of the element row 10b changes. When the voltage difference between the element arrays 10a and 10b exceeds the reference value, the comparison circuit 30 determines that any one of the LEDs in the element arrays 10a and 10b is abnormal. The comparison circuit 30 notifies the determination result to the outside of the drive circuit 1.

図1には、2つの素子列10a、10bを備える駆動回路1の例を示したが、駆動回路1は、任意の数の素子列10を備えることができる。図1の例では、比較回路30は、素子列10a、10bのどちらに含まれるLEDに異常があるかを判定することができない。しかし、駆動回路1が3つ以上の素子列10を備える場合は、例えば以下のようにLEDの異常がある素子列10を検出することができる。   Although FIG. 1 shows an example of the drive circuit 1 including two element arrays 10a and 10b, the drive circuit 1 can include an arbitrary number of element arrays 10. In the example of FIG. 1, the comparison circuit 30 cannot determine which of the element rows 10a and 10b the LED included is abnormal. However, when the drive circuit 1 includes three or more element arrays 10, for example, the element array 10 having an LED abnormality can be detected as follows.

駆動回路1は、素子列10a、10b、10cを備えるとする。比較回路30は、素子列10a、10bの電圧差、素子列10a、10cの電圧差、および素子列10b、10cの電圧差を検出する。ここで、素子列10a、10bの電圧差および素子列10b、10cの電圧差が所定の範囲を超えており、素子列10a、10cの電圧差が所定の範囲内であるとすると、素子列10b内のLEDに異常があると判定できる。   The drive circuit 1 includes element rows 10a, 10b, and 10c. The comparison circuit 30 detects a voltage difference between the element arrays 10a and 10b, a voltage difference between the element arrays 10a and 10c, and a voltage difference between the element arrays 10b and 10c. Here, if the voltage difference between the element rows 10a and 10b and the voltage difference between the element rows 10b and 10c exceed a predetermined range, and the voltage difference between the element rows 10a and 10c is within the predetermined range, the element row 10b. It can be determined that the LED inside is abnormal.

なお素子列10a、10bにおける電圧は、上述した位置の他に、任意のLED間または素子列10a、10bのカソード側において検出するよう構成してもよい。素子列10a、10bのカソード側において検出する際には、素子列10a、10bのカソード側にそれぞれ直列に同じ抵抗値をもつ抵抗を接続し、素子列10a、10bのカソード側の電圧を検出する。素子列10a、10bは、任意の数のLEDを含むことができる。素子列10a、10bに含まれるLEDが1つの場合は、上述のように、素子列10a、10bのカソード側において素子列10a、10bの電圧の検出を行う。   In addition, you may comprise so that the voltage in element row | line | columns 10a and 10b may be detected between arbitrary LED or the cathode side of element row | line | columns 10a and 10b besides the position mentioned above. When detecting on the cathode side of the element rows 10a and 10b, resistors having the same resistance value are connected in series to the cathode sides of the element rows 10a and 10b, and the voltage on the cathode side of the element rows 10a and 10b is detected. . The element rows 10a and 10b can include any number of LEDs. When one LED is included in the element rows 10a and 10b, as described above, the voltage of the element rows 10a and 10b is detected on the cathode side of the element rows 10a and 10b.

以上説明したとおり、本発明の実施の形態1に係る駆動回路1は、2の素子列内の電圧の検出位置における電圧に基づき、検出された電圧差が所定の範囲内にあるか否かに基づきLEDの異常を検出する。そのため、実施の形態1に係る駆動回路1では、正常とみなす所定の範囲を決める際に、LEDの外部の影響による電圧変化の誤差を考慮する必要がなく、発光素子の異常検出の精度を向上させることができる。   As described above, the drive circuit 1 according to Embodiment 1 of the present invention determines whether the detected voltage difference is within a predetermined range based on the voltage at the detection position of the voltage in the two element arrays. Based on this, an abnormality of the LED is detected. Therefore, in the drive circuit 1 according to the first embodiment, when determining a predetermined range that is considered normal, there is no need to consider an error in voltage change due to an external influence of the LED, and the accuracy of detecting an abnormality of the light emitting element is improved. Can be made.

(実施の形態2)
図2は、本発明の実施の形態2に係る発光素子駆動回路の構成例を示すブロック図である。実施の形態2に係る駆動回路1は、実施の形態1と同様に、LEDの異常を検出し、異常を検出した場合には、素子列10a、10bに流れる電流および/または素子列10a、10bにかかる電圧を変化させ、保護動作を行う。実施の形態1と異なる、駆動回路1の各部について以下に説明する。
(Embodiment 2)
FIG. 2 is a block diagram showing a configuration example of the light emitting element driving circuit according to Embodiment 2 of the present invention. Similarly to the first embodiment, the drive circuit 1 according to the second embodiment detects an abnormality of the LED, and when an abnormality is detected, the current flowing through the element rows 10a and 10b and / or the element rows 10a and 10b. The protective voltage is applied by changing the voltage applied to. Each part of the drive circuit 1 that is different from the first embodiment will be described below.

駆動回路1は、実施の形態1の駆動回路1に加え、抵抗27および制御回路40を備える。NMOS24のゲートは、GATE端子を介して制御回路40に接続されている。NMOS24は、抵抗27を介して接地されている。抵抗27は、素子列10a、10bを流れる電流の総量を電圧変換するために用いられる。抵抗27で生じる電圧降下は、CS端子を介して制御回路に送られる。制御回路40の一端は、GND端子を介して接地されている。   The drive circuit 1 includes a resistor 27 and a control circuit 40 in addition to the drive circuit 1 of the first embodiment. The gate of the NMOS 24 is connected to the control circuit 40 via the GATE terminal. The NMOS 24 is grounded via a resistor 27. The resistor 27 is used for voltage conversion of the total amount of current flowing through the element arrays 10a and 10b. The voltage drop generated by the resistor 27 is sent to the control circuit via the CS terminal. One end of the control circuit 40 is grounded via a GND terminal.

比較回路30は、実施の形態1と同様に、素子列10a、10bの電圧差に基づきLEDの異常の有無を判定し、例えば、素子列10a、10bの電圧差が所定の範囲から逸脱している電圧量をFB端子を介して制御回路40に送る。   As in the first embodiment, the comparison circuit 30 determines whether there is an abnormality in the LED based on the voltage difference between the element arrays 10a and 10b. For example, the voltage difference between the element arrays 10a and 10b deviates from a predetermined range. Is sent to the control circuit 40 via the FB terminal.

制御回路40は、例えば以下のように保護動作を行う。制御回路40は、FB端子の入力に基づき、ゲート電源26を制御する。ゲート電源26を制御すると、NMOS24のゲート電圧が変化し、それに伴ってNMOS24のドレイン電流が変化し、素子列10a、10bに流れる電流の総量を減少させることができる。実施の形態1において説明したとおり、駆動回路1が3つ以上の素子列10を備える場合には、LEDの異常が発生した素子列10を特定できることがある。そこで、素子列10にそれぞれスイッチまたはスイッチング素子を設け、LEDの異常が発生した素子列10には電流が流れなくなるように制御するよう構成してもよい。   The control circuit 40 performs a protection operation as follows, for example. The control circuit 40 controls the gate power supply 26 based on the input of the FB terminal. When the gate power supply 26 is controlled, the gate voltage of the NMOS 24 changes, and the drain current of the NMOS 24 changes accordingly, and the total amount of current flowing through the element arrays 10a and 10b can be reduced. As described in the first embodiment, when the drive circuit 1 includes three or more element arrays 10, the element array 10 in which the abnormality of the LED has occurred may be identified. Therefore, a switch or a switching element may be provided in each element row 10 and control may be performed so that no current flows through the element row 10 in which the abnormality of the LED has occurred.

なお、ゲート電源26を制御し、NMOS24のゲート電圧が閾値を超える時間と超えない時間を制御することにより、素子列10a、10bにかかる電圧を制御するよう構成してもよい。また例えば、比較回路30でLEDの異常が検出された場合には、素子列10a、10b内の各LEDにかかる電圧が、立ち上がり電圧より小さくなるように、素子列10a、10bにかかる電圧を制御するよう構成してもよい。   The voltage applied to the element arrays 10a and 10b may be controlled by controlling the gate power supply 26 and controlling the time when the gate voltage of the NMOS 24 exceeds and does not exceed the threshold value. Further, for example, when an abnormality of the LED is detected by the comparison circuit 30, the voltage applied to the element arrays 10a and 10b is controlled so that the voltage applied to each LED in the element arrays 10a and 10b is smaller than the rising voltage. You may comprise.

さらに制御回路40は、上述の制御において、例えば以下のようにCS端子の入力を考慮するよう構成してもよい。CS端子の入力は、素子列10a、10bに流れる電流の合計を、抵抗27を用いて電圧変換した結果である。制御回路40は、CS端子の入力が所定の範囲内であるか否かを判定し、判定結果を考慮して、ゲート電源26の制御を行うよう構成してもよい。所定の範囲とは、素子列10a、10bに流れる電流が過電流とならない範囲である。   Furthermore, the control circuit 40 may be configured to take into account the input of the CS terminal in the above-described control, for example, as follows. The input of the CS terminal is the result of voltage conversion of the total current flowing through the element arrays 10 a and 10 b using the resistor 27. The control circuit 40 may be configured to determine whether the input of the CS terminal is within a predetermined range, and to control the gate power supply 26 in consideration of the determination result. The predetermined range is a range in which the current flowing through the element arrays 10a and 10b does not become an overcurrent.

以上説明したとおり、本発明の実施の形態2に係る駆動回路1は、実施の形態1と同様に発光素子の異常検出の精度を向上させることができる。さらに、実施の形態2に係る駆動回路1は、異常が検出されれば、発光素子列に流れる電流および/または発光素子列にかかる電圧を制御することが可能となる。   As described above, the drive circuit 1 according to the second embodiment of the present invention can improve the accuracy of detecting an abnormality of the light emitting element as in the first embodiment. Furthermore, if an abnormality is detected, the drive circuit 1 according to Embodiment 2 can control the current flowing through the light emitting element array and / or the voltage applied to the light emitting element array.

本発明の実施の形態は上述の実施の形態に限られない。図1、2の例では、降圧回路を設けたが、昇圧回路を設けるよう構成してもよい。   The embodiment of the present invention is not limited to the above-described embodiment. In the example of FIGS. 1 and 2, the step-down circuit is provided, but a step-up circuit may be provided.

上記の実施形態の一部または全部は、以下の付記のようにも記載されうるが、以下には限られない。   A part or all of the above-described embodiment can be described as in the following supplementary notes, but is not limited thereto.

(付記1)
並列に接続される2以上の発光素子列であって、それぞれが1または2以上の直列に接続される同数の発光素子を含む発光素子列と、
任意の2の前記発光素子列について、1の前記発光素子列内の、任意の前記発光素子間または前記発光素子列のカソード側における電圧と、他方の前記発光素子列内の前記1の発光素子列内での電圧の検出位置と同じ位置における電圧との電圧差を検出する、電圧差検出手段と、
前記電圧差が所定の範囲を超えている場合に、前記2の発光素子列の内、いずれかの前記発光素子に異常があると判定する、異常判定手段と、
を備えることを特徴とする発光素子駆動回路。
(Appendix 1)
Two or more light emitting element arrays connected in parallel, each including one or two or more light emitting element arrays connected in series;
For any two of the light emitting element rows, the voltage on the cathode side of the light emitting element row in one light emitting element row or on the cathode side of the light emitting element row, and the first light emitting element in the other light emitting element row A voltage difference detection means for detecting a voltage difference with a voltage at the same position as the voltage detection position in the row;
An abnormality determining means for determining that any one of the light emitting elements in the two light emitting element arrays is abnormal when the voltage difference exceeds a predetermined range;
A light-emitting element driving circuit comprising:

(付記2)
前記発光素子列は2以上の前記発光素子を含み、
前記電圧差検出手段は、前記発光素子列内の、中央の前記発光素子間または中央の前記発光素子の一端における電圧に基づき、電圧差を検出する、
ことを特徴とする付記1に記載の発光素子駆動回路。
(Appendix 2)
The light emitting element array includes two or more light emitting elements,
The voltage difference detection means detects a voltage difference based on a voltage at one end of the light emitting elements in the light emitting element row or between the central light emitting elements.
The light-emitting element driving circuit according to appendix 1, wherein:

(付記3)
前記異常判定手段において、異常があると判定されると、前記2の発光素子列に流れる電流および/または前記2の発光素子列にかかる電圧を変化させて保護動作を行う、回路保護手段をさらに備える、
ことを特徴とする付記1または2に記載の発光素子駆動回路。
(Appendix 3)
Circuit protection means for performing a protection operation by changing the current flowing through the second light emitting element array and / or the voltage applied to the second light emitting element array when the abnormality determining means determines that there is an abnormality. Prepare
The light-emitting element drive circuit according to appendix 1 or 2, wherein

(付記4)
並列に接続される2以上の発光素子列であって、それぞれが1または2以上の直列に接続される同数の発光素子を含む発光素子列を備える、発光素子駆動回路が行う、発光素子異常検出方法であって、
任意の2の前記発光素子列について、1の前記発光素子列内の、任意の前記発光素子間または前記発光素子列のカソード側における電圧と、他方の前記発光素子列内の前記1の発光素子列内での電圧の検出位置と同じ位置における電圧との電圧差を検出する、電圧差分検出ステップと、
前記電圧差が所定の範囲を超えている場合に、前記2の発光素子列の内、いずれかの前記発光素子に異常があると判定する、異常判定ステップと、
を備えることを特徴とする発光素子異常検出方法。
(Appendix 4)
Light emitting element abnormality detection performed by a light emitting element drive circuit, comprising two or more light emitting element arrays connected in parallel, each including one or two or more light emitting element arrays connected in series A method,
For any two of the light emitting element rows, the voltage on the cathode side of the light emitting element row in one light emitting element row or on the cathode side of the light emitting element row, and the first light emitting element in the other light emitting element row A voltage difference detection step for detecting a voltage difference with a voltage at the same position as the voltage detection position in the row;
When the voltage difference exceeds a predetermined range, an abnormality determination step for determining that any one of the light emitting elements in the two light emitting element arrays is abnormal;
A light emitting element abnormality detection method comprising:

(付記5)
前記発光素子列は2以上の前記発光素子を含み、
前記電圧差検出ステップにおいて、前記発光素子列内の、中央の前記発光素子間または中央の前記発光素子の一端における電圧に基づき、電圧差を検出する、
ことを特徴とする付記4に記載の発光素子異常検出方法。
(Appendix 5)
The light emitting element array includes two or more light emitting elements,
In the voltage difference detection step, a voltage difference is detected based on a voltage between the central light emitting elements or one end of the central light emitting element in the light emitting element array.
The light emitting element abnormality detection method according to appendix 4, wherein

(付記6)
前記異常判定ステップにおいて、異常があると判定されると、前記2の発光素子列に流れる電流および/または前記2の発光素子列にかかる電圧を変化させて保護動作を行う、回路保護ステップをさらに備える、
ことを特徴とする付記4または5に記載の発光素子異常検出方法。
(Appendix 6)
In the abnormality determination step, when it is determined that there is an abnormality, a circuit protection step is further performed in which a protection operation is performed by changing a current flowing through the second light emitting element array and / or a voltage applied to the second light emitting element array. Prepare
The light emitting element abnormality detection method according to appendix 4 or 5, characterized in that:

1 発光素子駆動回路
10、10a、10b 発光素子列
21 コンデンサ
22 インダクタ
23 ダイオード
24 N型MOSトランジスタ
25 直流電源
26 ゲート電源
27 抵抗
30 比較回路
40 制御回路
1 Light-Emitting Element Drive Circuit 10, 10a, 10b Light-Emitting Element Row
21 capacitor
22 Inductor
23 Diode
24 N-type MOS transistor
25 DC power supply
26 Gate power supply
27 Resistance
30 Comparison circuit
40 Control circuit

Claims (6)

並列に接続される2以上の発光素子列であって、それぞれが1または2以上の直列に接続される同数の発光素子を含む発光素子列と、
任意の2の前記発光素子列について、1の前記発光素子列内の、任意の前記発光素子間または前記発光素子列のカソード側における電圧と、他方の前記発光素子列内の前記1の発光素子列内での電圧の検出位置と同じ位置における電圧との電圧差を検出する、電圧差検出手段と、
前記電圧差が所定の範囲を超えている場合に、前記2の発光素子列の内、いずれかの前記発光素子に異常があると判定する、異常判定手段と、
を備えることを特徴とする発光素子駆動回路。
Two or more light emitting element arrays connected in parallel, each including one or two or more light emitting element arrays connected in series;
For any two of the light emitting element rows, the voltage on the cathode side of the light emitting element row in one light emitting element row or on the cathode side of the light emitting element row, and the first light emitting element in the other light emitting element row A voltage difference detection means for detecting a voltage difference with a voltage at the same position as the voltage detection position in the row;
An abnormality determining means for determining that any one of the light emitting elements in the two light emitting element arrays is abnormal when the voltage difference exceeds a predetermined range;
A light-emitting element driving circuit comprising:
前記発光素子列は2以上の前記発光素子を含み、
前記電圧差検出手段は、前記発光素子列内の、中央の前記発光素子間または中央の前記発光素子の一端における電圧に基づき、電圧差を検出する、
ことを特徴とする請求項1に記載の発光素子駆動回路。
The light emitting element array includes two or more light emitting elements,
The voltage difference detection means detects a voltage difference based on a voltage at one end of the light emitting elements in the light emitting element row or between the central light emitting elements.
The light-emitting element driving circuit according to claim 1.
前記異常判定手段において、異常があると判定されると、前記2の発光素子列に流れる電流および/または前記2の発光素子列にかかる電圧を変化させて保護動作を行う、回路保護手段をさらに備える、
ことを特徴とする請求項1または2に記載の発光素子駆動回路。
Circuit protection means for performing a protection operation by changing the current flowing through the second light emitting element array and / or the voltage applied to the second light emitting element array when the abnormality determining means determines that there is an abnormality. Prepare
The light-emitting element drive circuit according to claim 1 or 2.
並列に接続される2以上の発光素子列であって、それぞれが1または2以上の直列に接続される同数の発光素子を含む発光素子列を備える、発光素子駆動回路が行う、発光素子異常検出方法であって、
任意の2の前記発光素子列について、1の前記発光素子列内の、任意の前記発光素子間または前記発光素子列のカソード側における電圧と、他方の前記発光素子列内の前記1の発光素子列内での電圧の検出位置と同じ位置における電圧との電圧差を検出する、電圧差分検出ステップと、
前記電圧差が所定の範囲を超えている場合に、前記2の発光素子列の内、いずれかの前記発光素子に異常があると判定する、異常判定ステップと、
を備えることを特徴とする発光素子異常検出方法。
Light emitting element abnormality detection performed by a light emitting element drive circuit, comprising two or more light emitting element arrays connected in parallel, each including one or two or more light emitting element arrays connected in series A method,
For any two of the light emitting element rows, the voltage on the cathode side of the light emitting element row in one light emitting element row or on the cathode side of the light emitting element row, and the first light emitting element in the other light emitting element row A voltage difference detection step for detecting a voltage difference with a voltage at the same position as the voltage detection position in the row;
When the voltage difference exceeds a predetermined range, an abnormality determination step for determining that any one of the light emitting elements in the two light emitting element arrays is abnormal;
A light emitting element abnormality detection method comprising:
前記発光素子列は2以上の前記発光素子を含み、
前記電圧差検出ステップにおいて、前記発光素子列内の、中央の前記発光素子間または中央の前記発光素子の一端における電圧に基づき、電圧差を検出する、
ことを特徴とする請求項4に記載の発光素子異常検出方法。
The light emitting element array includes two or more light emitting elements,
In the voltage difference detection step, a voltage difference is detected based on a voltage between the central light emitting elements or one end of the central light emitting element in the light emitting element array.
The light emitting element abnormality detection method according to claim 4.
前記異常判定ステップにおいて、異常があると判定されると、前記2の発光素子列に流れる電流および/または前記2の発光素子列にかかる電圧を変化させて保護動作を行う、回路保護ステップをさらに備える、
ことを特徴とする請求項4または5に記載の発光素子異常検出方法。
In the abnormality determination step, when it is determined that there is an abnormality, a circuit protection step is further performed in which a protection operation is performed by changing a current flowing through the second light emitting element array and / or a voltage applied to the second light emitting element array. Prepare
The light emitting element abnormality detection method according to claim 4 or 5.
JP2011153331A 2011-07-11 2011-07-11 Light-emitting element driving circuit and light-emitting element abnormality detection method Pending JP2013021135A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014041803A (en) * 2012-08-23 2014-03-06 Ccs Inc Led lighting system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014041803A (en) * 2012-08-23 2014-03-06 Ccs Inc Led lighting system

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