JP2013008714A - Solid state image pickup device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid state image pickup device that has plural horizontal transfer registers providing high image quality and can suppress transfer defect from a vertical transfer register to a first horizontal transfer register and transfer defect from the first horizontal transfer register to a second horizontal transfer register.SOLUTION: First and third transfer electrodes 203, 205 of a first horizontal transfer register 304 are configured so that the potential at the vertical transfer register side is deep and the potential at the second horizontal transfer register 305 side is shallow because the width thereof at the vertical transfer register side is larger than that at the second horizontal transfer register 305 side. On the other hand, second and fourth transfer electrodes 204, 206 of the first horizontal transfer register 304 are configured so that the potential at the vertical transfer register side is shallow and the potential at the second horizontal transfer register 305 side is deep because the width thereof at the second horizontal transfer register 305 side is larger than that at the vertical transfer register side.

Description

  The present invention relates to a solid-state imaging device, and more particularly to a CCD solid-state imaging device having a 2ch horizontal transfer structure.

As a CCD image sensor, for example, two horizontal transfer registers are provided in order to improve resolution, and signal charges of odd lines and signal charges of even lines are simultaneously transferred horizontally by separate horizontal transfer registers, and 1H (H: It is well known that it is possible to read out signal charges for two lines within (horizontal scanning time).
An example of Patent Document 1 will be described with reference to FIGS.

  As shown in FIG. 8, a plurality of photosensors 801 that are two-dimensionally arranged horizontally and vertically in pixel units, and signals generated by the photosensors 801 are arranged for each vertical column of the plurality of photosensors 801. An image unit 803 is configured by a plurality of vertical transfer registers 802 that transfer charges vertically. The vertical transfer register 802 is responsible for operations corresponding to vertical scanning and is driven in four phases by vertical transfer clocks φV81 to φV84.

For example, first and second horizontal transfer registers 804 and 805 for horizontally transferring the signal charges transferred from the vertical transfer register 802 are arranged on the output side of the vertical transfer register 802. The first and second horizontal transfer registers are responsible for operations corresponding to horizontal scanning and are driven in two phases by horizontal transfer clocks φH81 and φH82.
Signal charges are transferred from the vertical transfer register 802 to the first and second horizontal transfer registers 804 and 805. The distribution to the first and second horizontal transfer registers 804 and 805 is performed by a horizontal transfer register transfer gate (HHG) 806 disposed between them. A transfer pulse φHHG is applied to the HHG 806.

  On the output side of the first and second horizontal transfer registers 804 and 805, the first and second output units 807 and 808 having a floating diffusion amplifier configuration that detects the transferred signal charge and converts it into a signal voltage, for example. The pixel signals are output from the first and second output units 807 and 808, respectively. As described above, a CCD image sensor of a two-channel pixel signal output having the first and second output units 807 and 808 is configured.

  In this CCD image sensor, when a part of the signal charge remains in the first horizontal transfer register 804 when the signal charge is transferred from the first horizontal transfer register 804 to the second horizontal transfer register 805, the remaining signal charge. As a result, vertical streak noise (FPN: Fixed Pattern Noise) is generated on the monitor output screen, and the image quality is deteriorated. Therefore, conventionally, as shown in FIG. 9, the first horizontal transfer register 804 of the first horizontal transfer register 804 that contributes to the transfer of signal charges (● in the figure) 901 from the first horizontal transfer register 804 to the second horizontal transfer register 805. The shape of the transfer electrode 902 is formed so that the second horizontal transfer register 805 side is wider than the vertical transfer register 802 side to which signal charges are transferred. A channel stop 904 that blocks signal charges is formed between the vertical transfer registers and between the horizontal transfer registers.

  By adopting such a transfer electrode shape, a potential gradient descending from the vertical transfer register 802 side toward the second horizontal transfer register 805 side is formed. Therefore, the signal is transferred to the second horizontal transfer register 805 without remaining in the first horizontal transfer register 804, and a part of the signal charge 901 remains in the first horizontal transfer register. We tried to suppress FPN.

JP-A-1-308072

  In a CCD image sensor in which pixel miniaturization advances, the horizontal transfer register gate length 905 is reduced with pixel miniaturization. (The horizontal transfer register gate length 905 of a 1.4 μm pixel size CCD image sensor that has been mass-produced in recent years is about 0.7 μm.) That is, the horizontal transfer register gate length 905 of the first horizontal transfer electrode 902 is a pixel. Since it is determined by the size, in order to form a potential gradient for suppressing FPN, the first horizontal transfer electrode 902 of the first horizontal transfer register 804 needs to be narrowed on the vertical transfer register 802 side.

  On the other hand, when the signal charge 201 is transferred from the vertical transfer register 802 to the first horizontal transfer register 804, a potential gradient that decreases from the vertical transfer register 802 toward the first horizontal transfer register 804 is required. The narrowing of the transfer electrode on the vertical transfer register 802 side causes a drop in the potential gradient descending from the vertical transfer register 802 toward the first horizontal transfer register 804, leaving the signal charge 901 in the vertical transfer register 802, There arises a problem that FPN due to residual signal charges is generated.

  The present invention has been made in view of the above problems, and the object of the present invention is to transfer defects from the vertical transfer register to the first horizontal transfer register and from the first horizontal transfer register to the second horizontal transfer register. It is an object of the present invention to provide a solid-state imaging device having a plurality of high-quality horizontal transfer registers that suppresses the transfer failure.

  A solid-state imaging device according to the present invention includes a semiconductor substrate in which a plurality of light receiving portions are formed in a matrix and a light receiving region is configured by the plurality of light receiving portions, and a light receiving region of the semiconductor substrate, A vertical transfer portion formed between the rows extending in the column direction; a semiconductor substrate, a first horizontal transfer portion formed adjacent to the light receiving region in the column direction and extending in the row direction; and the semiconductor substrate The second horizontal transfer unit is formed adjacent to the first horizontal transfer unit on the side opposite to the light receiving region and extending in the row direction, and is formed above the first horizontal transfer unit. A first horizontal transfer electrode, and a second horizontal transfer electrode formed above and adjacent to the first horizontal transfer electrode, the first horizontal transfer electrode. Below, the potential on the light receiving region side is higher than the potential on the second horizontal transfer unit side. High, in the below the second horizontal transfer electrode, the potential of the second horizontal transfer portion is equal to or higher than the potential of the light receiving portion side.

In the solid-state imaging device according to the present invention, it is possible to suppress the transfer failure from the vertical transfer unit to the first horizontal transfer unit and the transfer failure from the first horizontal transfer unit to the second horizontal transfer unit. .
In the above-described configuration, the solid-state imaging device according to the present invention is configured such that the first horizontal transfer electrode has a light receiving region side wider than the second horizontal transfer unit side, and the second horizontal transfer electrode has a second width. It is also possible to adopt a configuration in which the width on the horizontal transfer portion side is wider than the width on the light receiving region side. With such a configuration, the potential can be changed without changing the impurity concentration.

  In the solid-state imaging device according to the present invention, in the above configuration, the N-type impurity distribution of the first horizontal transfer unit below the first horizontal transfer electrode is closer to the second horizontal transfer unit than the width of the light receiving region. The N-type impurity distribution of the first horizontal transfer unit below the second horizontal transfer electrode is wide and the second horizontal transfer unit side is wider than the light receiving region side. You can also. With such a configuration, the potential can be changed without changing the shape of the transfer electrode.

  The solid-state imaging device according to the present invention further includes a third horizontal transfer electrode formed above the second horizontal transfer portion facing the second horizontal transfer electrode in the above configuration, and the first horizontal transfer electrode The potential on the second horizontal transfer electrode side may be higher than the potential on the side opposite to the second horizontal transfer electrode. With such a configuration, transfer defects from the first horizontal transfer unit to the second horizontal transfer unit can be further suppressed.

1 is a schematic block diagram illustrating a configuration of a solid-state imaging device according to a first embodiment of the present invention. FIG. 2 is a schematic plan view showing a horizontal transfer register and its peripheral portion extracted from the configuration of the solid-state imaging device according to the first embodiment of the present invention. FIG. 3 is a schematic cross-sectional view showing the configuration of the A-A ′ cross section of the portion shown in FIG. 2. It is a timing chart concerning horizontal transfer. It is a schematic top view which extracts and shows a horizontal transfer register and its peripheral part among the structures of the solid-state imaging device which concerns on a modification. It is a schematic plan view which extracts and shows a horizontal transfer register and its peripheral part among the structures of the solid-state imaging device which concerns on the 2nd Example of this invention. It is a schematic cross section which shows the structure of the B-B 'cross section of the part shown in FIG. It is a block diagram which shows the structure of the solid-state imaging device which concerns on a prior art example. It is a top view which extracts and shows a horizontal transfer register and its peripheral part among the structures of the solid-state imaging device concerning a prior art example.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[Example 1]
FIG. 1 is a schematic diagram showing the configuration of a solid-state imaging apparatus according to the first embodiment of the present invention.
As shown in FIG. 1, a plurality of photosensors 101 arranged two-dimensionally in the horizontal and vertical directions in units of pixels, and signals generated by the photosensors 101 arranged for each vertical row of the plurality of photosensors 101. An image unit 103 is configured by a plurality of vertical transfer registers 102 that transfer charges vertically. The vertical transfer register 102 is responsible for operations corresponding to vertical scanning and is driven in four phases by vertical transfer clocks φV1 to φV4.

  On the output side of the vertical transfer register 102, for example, first and second horizontal transfer registers 104 and 105 for horizontally transferring the signal charges transferred from the vertical transfer register 102 are juxtaposed. The first and second horizontal transfer registers 104 and 105 are responsible for operations corresponding to horizontal scanning and are driven in four phases by horizontal transfer clocks φH1, φH2, φH3, φH4a, and φH4b. Signal charges are transferred from the vertical transfer register 102 to the first and second horizontal transfer registers 104 and 105. The distribution to the first and second horizontal transfer registers 104 and 105 is performed by a horizontal transfer register transfer gate (HHG) 106 disposed between them. The horizontal transfer register transfer pulse φHHG is applied to the horizontal transfer register transfer gate.

  On the output side of the first and second horizontal transfer registers 104 and 105, for example, first and second output units 107 and 108 having a floating diffusion amplifier configuration for detecting the transferred signal charge and converting it to a signal voltage. The first and second output units 107 and 108 respectively output pixel signals. As described above, a CCD image sensor having a first and second output units 107 and 108 and outputting a two-channel pixel signal is configured.

2 is a plan view of a four-phase driving type horizontal transfer register corresponding to the first and second horizontal transfer registers 104 and 105 shown in FIG. 1, and FIG. 3 is an AA ′ line in the plan view of FIG. The structural drawing of a cross section is shown.
As shown in FIG. 3, an n-type transfer channel 202 is formed on the surface side of the p-well 201, and the first, second, third, and fourth transfer electrodes 203, 204, 205, 206 are disposed above the n-type transfer channel 202. Is formed through a gate insulating film (not shown). Transfer pulses φH1, φH2, φH3, φH4a, and φH4b are applied to the first, second, third, and fourth transfer electrodes 203, 204, 205, and 206, respectively.

  Here, as shown in FIG. 2, the shape of the first and third transfer electrodes 203 and 205 in the first horizontal transfer register 304 is the second horizontal transfer register on the vertical transfer register 102 side (see FIG. 1). It is formed wider than the 305 side. For example, in the case of a 1.4 μm pixel size CCD image sensor, the vertical transfer register 102 (see FIG. 1) side is 0.5 μm, and the second horizontal transfer register 305 side is 0.2 μm. In addition, the width of the transfer electrode on the vertical transfer register 102 side in the first and third transfer registers is formed wider than the width of the vertical transfer register (for example, about 0.3 to 0.4 μm).

As shown in FIG. 2, in the solid-state imaging device according to the present embodiment, a channel stop 210 that blocks signal charges is formed.
On the other hand, the second and fourth transfer electrodes 204 and 206 are formed wider on the second horizontal transfer register side than on the vertical transfer register 302 side. For example, in the case of a CCD image sensor having a pixel size of 1.4 μm, the vertical transfer register 102 side (see FIG. 1) is 0.2 μm, and the second horizontal transfer register 305 side is 0.5 μm. In the present embodiment, the first, second, and third transfer electrodes 203, 204, and 205 of the first and second horizontal transfer registers 304 and 305 are electrically connected through, for example, a tungsten wiring (not shown). It is connected to.

The operation of the horizontal transfer register in the solid-state imaging device according to the present embodiment will be described with reference to the timing chart shown in FIG. 4 and FIG.
In the initial state (t = t0), the transfer pulse φV4 of the vertical transfer electrode 207 is at “H” level, and the potential under the vertical transfer electrode 207 is deepened by this applied voltage. Charge is accumulated.

  At time t1, the transfer pulse φV4 of the vertical transfer electrode 207 changes from “H” level to “L” level, and the transfer pulse φVL of the vertical transfer register final electrode 208 changes from “L” level to “H” level. The potential under the transfer electrode 207 becomes shallow, and the potential of the vertical transfer register final electrode 208 becomes deep. Accordingly, the signal charge is transferred to the vertical transfer register final electrode 208.

  At time t2, since the transfer pulse φVL of the vertical transfer register final electrode 208 is changed from the “H” level to the “L” level, the potential below the vertical transfer register final electrode 208 becomes shallow, and the vertical transfer register 102 (see FIG. 1). (See), the signal charge is transferred and transferred to the accumulation region under the first transfer electrode 203 of the first horizontal transfer register 304. At this time, the transfer pulse φH1 of the first transfer electrode 203 is at “H” level, and the potential below the first transfer electrode 203 is deep.

  At time t3, the transfer pulse φH1 of the first transfer electrode 203 changes from “H” level to “L” level, and the transfer pulses φH4a and φH4b of the fourth transfer electrode 206 change from “L” level to “H” level. The potential under the first transfer electrode 203 becomes shallow, and the potential under the fourth transfer electrode 206 becomes deep. Accordingly, the signal charge is transferred under the fourth transfer electrode 206.

  At time t4, the horizontal transfer register transfer pulse φHHG changes from “L” level to “H” level, and the transfer pulse φH4a changes from “H” level to “L” level. The potential becomes deep, and the potential under the fourth transfer electrode 206 of the first horizontal transfer register 304 becomes shallow. Accordingly, the signal charge is transferred under the horizontal transfer register transfer gate 306.

At time t <b> 5, the signal charge is transferred to the fourth transfer electrode 206 of the second horizontal transfer register 305 because the horizontal transfer register transfer pulse φHHG changes from “H” level to “L” level.
In this manner, the signal charges transferred from the vertical transfer register 102 (see FIG. 1) are distributed to the first and second horizontal transfer registers 304 and 305. Thereafter, the four-phase driving is performed by the horizontal transfer pulses φH1, φH2, φH3, φH4a, and φH4b, and the distributed signal charges are first and second provided on the output side of the first and second horizontal transfer registers 304 and 305, respectively. It is transferred to the output units 107 and 108 (see FIG. 1) and output as a pixel signal.

By the way, the depth of the potential depends on the channel length. When the channel length is long, the potential becomes deep, and when it is short, the potential becomes shallow. In this embodiment, as shown in the cross-sectional structure diagram of FIG. 3, since the impurity concentration under the transfer electrode is uniform, the channel length is determined by the width of the transfer electrode.
The first and third transfer electrodes 203 and 205 of the first horizontal transfer register 304 are formed wider on the vertical transfer register 102 side (see FIG. 1) than on the second horizontal transfer register 305 side. The potential on the transfer register 102 side (see FIG. 1) is deep, and the potential on the second horizontal transfer register 305 side is shallow.

On the other hand, the second and fourth transfer electrodes 204 and 206 of the first horizontal transfer register 304 are formed wider on the second horizontal transfer register 305 side than on the vertical transfer register 102 side (see FIG. 1). The potential on the vertical transfer register 102 side (see FIG. 1) is shallow, and the potential on the second horizontal transfer register 305 side is deeply formed.
In this embodiment, the signal charge transfer from the vertical transfer register 102 side (see FIG. 1) to the first horizontal transfer register 304 has a deep potential on the vertical transfer register 102 side (see FIG. 1). A signal charge is transferred to one transfer electrode 203. Accordingly, a sufficient potential gradient between the vertical transfer register 102 (see FIG. 1) and the first horizontal transfer register 304 can be secured, so that signal charges remain in the vertical transfer register 102 (see FIG. 1). It is possible to suppress and prevent the occurrence of FPN.

  The signal charge transfer from the first horizontal transfer register 304 to the second horizontal transfer register 305 is performed after the signal charge is transferred from the adjacent first transfer electrode 203 to the fourth transfer electrode 206. The fourth transfer electrode 206 has a shallow potential on the vertical transfer register 102 side (see FIG. 1) and a deep potential on the second horizontal transfer register 305 side. It has a potential gradient toward the transfer register 305. Therefore, the remaining signal charges in the first horizontal transfer register 304 can be suppressed, and the occurrence of FPN can be prevented.

  As shown in this embodiment, the width of the transfer electrode on the vertical transfer register 102 side (see FIG. 1) in the first transfer electrode of the first horizontal transfer register 304 is formed wider than the vertical transfer register width 209. It is desirable to do. By adopting such a form, when transferring the signal charge from the vertical transfer register 102 (see FIG. 1) to the first horizontal transfer register 304, it becomes a path of signal charges whose outlet is expanded with respect to the entrance. Smoother signal charge transfer is possible.

[Modification]
As shown in FIG. 5, a part of the configuration of a solid-state imaging device according to a modified example in which the transfer electrode shape of the second horizontal transfer register 305 is changed is shown. Since the portion of the second horizontal transfer register 305 shown in FIG. 5 excluding the transfer electrode has the same configuration as the solid-state imaging device according to the first embodiment, illustration and description thereof are omitted.

  As shown in FIG. 5, the second horizontal transfer register fourth transfer electrode 406 is formed so that the first horizontal transfer register 304 is wider than the opposite side. As a result, the potential of the second horizontal transfer register fourth transfer electrode 406 on the first horizontal transfer register 304 side is deeply formed. Therefore, in the solid-state imaging device according to the present modification, the potential gradient from the first horizontal transfer register 304 to the second horizontal transfer register 305 is further increased as compared with the solid-state imaging device according to the first embodiment. The signal charge is transferred from 304 to the second horizontal transfer register 305, but smoother and signal charge remaining (FPN) in the first horizontal transfer register can be suppressed.

  The width of the second horizontal transfer register fourth transfer electrode 406 on the first horizontal transfer register 304 side is desirably formed wider than the horizontal transfer register transfer channel width 407. By adopting such a form, when signal charges are transferred from the first horizontal transfer register 304 to the second horizontal transfer register 305, a signal charge path having an outlet that expands with respect to the entrance becomes a more smooth signal. Charge transfer is possible.

[Example 2]
The second embodiment is different from the first embodiment in that the potential gradient in the first horizontal transfer register 304 is formed by impurity distribution, and the other configurations are the same as those in the first embodiment. Therefore, the point which becomes the summary is demonstrated.
FIG. 6 shows a plan view of a four-phase driving type horizontal transfer register corresponding to the first and second horizontal transfer registers 304 and 305 of the present embodiment. A structural diagram is shown in FIG.

As shown in FIG. 7, an n-type transfer channel 502 is formed on the surface side of the p-well 501, and the first, second, third, and fourth transfer electrodes 503, 504, 505, and 506 are disposed above the n-type transfer channel 502. Is formed through a gate insulating film (not shown).
Transfer pulses φH1, φH2, φH3, φH4a or φH4b are applied to the first, second, third and fourth transfer electrodes 503, 504, 505 and 506, respectively. In this embodiment, the first, second, and third transfer electrodes 503, 504, and 505 of the first and second horizontal transfer registers 304 and 305 are electrically connected via, for example, a tungsten wiring (not shown). It is connected to.

Here, a p-type impurity region 510 is formed under the first, second, third, and fourth transfer electrodes 503, 504, 505, and 506. To form the p-type impurity region 510, for example, after patterning a desired implantation region by photolithography, the implantation energy is set to 50 keV, the dose is set to 5.0E11 / cm ² , and p of boron (B) or the like is formed. Implant type impurities.

As shown in FIGS. 6 and 7, the p-type impurity 510 under the first and third transfer electrodes 503 and 505 in the first horizontal transfer register 304 is transferred to the n-type under the first and third transfer electrodes 503 and 505. The channel 502 is formed so that the vertical transfer register 302 side is wider than the second horizontal transfer register 305 side.
On the other hand, the p-type impurity 510 under the second and fourth transfer electrodes 504 and 506 is transferred vertically to the n-type transfer channel 502 under the second and fourth transfer electrodes 504 and 506 on the second horizontal transfer register side. It is formed to be wider than the register 302 side.

  In this embodiment, the potential depths of the first, second, third, and fourth transfer electrodes 503, 504, 505, and 506 in the first horizontal transfer register 304 are applied to the n-type transfer channel 502 below each transfer electrode. Dependent. That is, the n-type transfer channel 502 under the first and third transfer electrodes 503 and 505 of the first horizontal transfer register 304 is formed wider on the vertical transfer register 302 side than on the second horizontal transfer register 305 side. For this reason, the potential on the vertical transfer register 102 side (see FIG. 1) is deep, and the potential on the second horizontal transfer register 305 side is shallow.

On the other hand, the n-type transfer channel 502 under the second and fourth transfer electrodes 504 and 506 of the first horizontal transfer register 304 is formed wider on the second horizontal transfer register 305 side than on the vertical transfer register 302 side. The potential on the vertical transfer register 102 side (see FIG. 1) is shallow, and the potential on the second horizontal transfer register 305 side is deeply formed.
As described above, also in this embodiment, as in the first embodiment, the signal charge transfer from the vertical transfer register 102 (see FIG. 1) to the first horizontal transfer register 304 is performed on the vertical transfer register 102 side (see FIG. The signal charge is transferred to the first transfer electrode 503 having a deep potential (see 1). As a result, a sufficient potential gradient between the vertical transfer register 302 and the first horizontal transfer register 304 can be secured, so that the remaining of signal charges in the vertical transfer register 102 (see FIG. 1) is suppressed, and the FPN Can be prevented. The signal charge transfer from the first horizontal transfer register 304 to the second horizontal transfer register 305 is performed by a fourth transfer electrode having a potential gradient from the vertical transfer register 102 (see FIG. 1) toward the second horizontal transfer register 305. Therefore, the remaining signal charges in the first horizontal transfer register 304 can be suppressed, and the occurrence of FPN can be prevented.

  Furthermore, in this embodiment, the potential gradient can be easily formed by suppressing the generation of FPN only by forming the p-type impurity region 510 by ion implantation.

  According to the present invention, in a solid-state imaging device having a plurality of horizontal transfer registers, transfer defects that occur during transfer from the vertical transfer register to the first horizontal transfer register and from the first horizontal transfer register to the second horizontal transfer register. (FPN) can be suppressed.

101. Photo sensor 102. Vertical transfer register 103. Image part 104,304. First horizontal transfer register 105,305. Second horizontal transfer register 106,306. Horizontal transfer register transfer gate 107. First output unit 108. Second output unit 201,501. p-well 202,502. n-type transfer channel 203,503. First transfer electrode 204, 504. Second transfer electrode 205,505. Third transfer electrode 206,506. Fourth transfer electrode 207. Vertical transfer electrode 208. Vertical transfer register final electrode 209. Vertical transfer register width 210. Channel stop 403. Second horizontal transfer register first transfer electrode 404. Second horizontal transfer register second transfer electrode 405. Second horizontal transfer register Third transfer electrode 406. Second horizontal transfer register fourth transfer electrode 407. Horizontal transfer register transfer channel width 510. p-type impurity region

Claims (4)

A plurality of light receiving portions are formed in a matrix, and a semiconductor substrate in which a light receiving region is configured by the plurality of light receiving portions,
A vertical transfer unit that is a light receiving region of the semiconductor substrate and that extends in a column direction between rows of the plurality of light receiving units;
A first horizontal transfer unit formed on the semiconductor substrate, adjacent to the light receiving region in the column direction and extending in the row direction;
A second horizontal transfer portion formed on the semiconductor substrate, adjacent to the opposite side of the light receiving region with respect to the first horizontal transfer portion, and extending in a row direction;
A first horizontal transfer electrode formed above the first horizontal transfer unit;
A second horizontal transfer electrode formed above the first horizontal transfer unit and adjacent to the first horizontal transfer electrode;
Below the first horizontal transfer electrode, the potential on the light receiving region side is higher than the potential on the second horizontal transfer unit side,
Below the second horizontal transfer electrode, the potential on the second horizontal transfer unit side is higher than the potential on the light receiving unit side. The first horizontal transfer electrode has a width on the light receiving region side wider than a width on the second horizontal transfer portion side,
2. The solid-state imaging device according to claim 1, wherein the second horizontal transfer electrode has a width on the second horizontal transfer unit side wider than a width on the light receiving region side. The N-type impurity distribution of the first horizontal transfer unit below the first horizontal transfer electrode is wider on the second horizontal transfer unit side than on the light receiving region side,
The N-type impurity distribution of the first horizontal transfer portion below the second horizontal transfer electrode is characterized in that the width on the second horizontal transfer portion side is wider than the width on the light receiving region side. Item 2. The solid-state imaging device according to Item 1. A third horizontal transfer electrode formed above the second horizontal transfer unit;
4. The lower side of the first horizontal transfer electrode, the potential on the second horizontal transfer electrode side is higher than the potential on the opposite side of the second horizontal transfer electrode. The solid-state imaging device according to any one of the above.

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