JP2012525693A5

JP2012525693A5 -

Info

Publication number: JP2012525693A5
Application number: JP2012507708A
Authority: JP
Filing date: 2010-04-26
Publication date: 2013-06-13

Claims

Optoelectronic semiconductor (1),
An active semiconductor laminate (10);
A reflective layer system (20),
The reflective layer system (20) includes a first beam transmissive layer (21) containing a first dielectric material in contact with the active semiconductor stack (10), and a metal layer (23). And
The metal layer (23) is disposed on the opposite side of the first semiconductor layer (10) of the first beam transmissive layer (21);
A second beam transmissive layer (22) is provided between the first beam transmissive layer (21) and the metal layer (23);
The second beam transmissive layer (22) includes a material with improved adhesion, and the metal layer (23) is directly applied to the material with improved adhesion;
The material having improved adhesion is different from the first dielectric material, and the adhesion of the metal layer (23) to the material having improved adhesion is compared to the adhesion to the first dielectric material. Selected to improve,
The first beam transparent layer (21) is made of silicon dioxide (SiO ₂ ) ,
The material with improved adhesion of the second beam transmissive layer (22) is selected from the group comprising AlN, Si _x N _y , Si ₃ N ₄ , TaN, indium tungsten oxide, indium zinc oxide, zinc oxide. Has been
The optoelectronic semiconductor (1), wherein the second beam transmissive layer (22) has a layer thickness D of 10 nm or less .

The metal layer (23) has a multilayer structure portion, and the multilayer structure portion includes an adhesive intervening layer (23A) on the side facing the active semiconductor multilayer portion (10). The adhesive intervening layer (23A) is directly applied to the material having improved adhesion, the adhesive intervening layer (23A) is made of chrome, and the adhesive intervening layer (23A) 2. The optoelectronic semiconductor (1) according to claim 1, having a layer thickness of 1 nm or less .

The material with improved adhesion of the second beam transmissive layer (22) is Si. _xx N _yy Alternatively, the optoelectronic semiconductor (1) according to claim 1 or 2, which is indium zinc oxide or zinc oxide.

The second beam transmissive layer (22) includes a layer system consisting of a plurality of layer pairs (22A, 22B) alternately having a high refractive index and a low refractive index, one of each layer pair. The optoelectronic semiconductor (1) according to any one of claims 1 to 3 , wherein the layer (22B) is made of the material with improved adhesion.

The metal layer (23) has a multilayer structure portion, and the multilayer structure portion includes an adhesive intervening layer (23A) on the side facing the active semiconductor multilayer portion (10). The adhesive intervening layer (23A) is directly applied to the material having improved adhesion, and the reflective intervening layer (23A) is reflected on the side opposite to the active semiconductor stacked portion (10). 5. The optoelectronic semiconductor (1) according to any one of claims 1 to 4 , wherein a container layer (23B) is included.

The adhesive intervening layer (23A) includes at least one of metals of Ti, Ta, Al, Pt, Pd, Cr, and Ni, or is formed of one of these metals. Item 5. The optoelectronic semiconductor (1) according to item 5 .

The optoelectronic semiconductor (1) according to claim 5 or 6 , wherein the adhesive intervening layer (23A) has a layer thickness of 1 nm or less.

Said metal layer (23), Al, Ag, or includes one of metal Au is formed from one of these metals, opto according to any one of claims 1 7 Electronics semiconductor (1).

The reflector layer (23B) is, Al, Ag, or at least one of the metals of Au is formed from one of these metals, any one of the claims 5 7 Optoelectronic semiconductor (1).

Optoelectronic semiconductor (1),
An active semiconductor laminate (10);
A reflective layer system (20),
The reflective layer system (20) includes a first beam transmissive layer (21) containing a first dielectric material in contact with the active semiconductor stack (10), and a metal layer (23). And
The metal layer (23) is disposed on the opposite side of the first semiconductor layer (10) of the first beam transmissive layer (21),
A second beam transmissive layer (22) is provided between the first beam transmissive layer (21) and the metal layer (23);
The second beam transmissive layer (22) includes a material having improved adhesion, and the metal layer (23) is directly applied to the material having improved adhesion;
The improved adhesion material is different from the first dielectric material;
The first dielectric material is silicon dioxide;
The material having improved adhesion is a nitrogen compound;
The nitrogen compound is selected from the group comprising AlN, Si _x N _y , Si ₃ N ₄ , TaN;
The metal layer (23) has a multilayer structure portion, and the multilayer structure portion includes an adhesive intervening layer (23A) on the side facing the active semiconductor multilayer portion (10). The intervening layer (23A) is directly applied to the material having improved adhesion, and a reflector is disposed on the opposite side of the adhesive intervening layer (23A) from the active semiconductor stack (10). An optoelectronic semiconductor (1), characterized in that it comprises a layer (23B).