JP2012253160A - Wiring member and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wiring member which is compact and highly stretchable, and a method for manufacturing the wiring member.SOLUTION: The wiring member includes a columnar base 10 and a wiring layer 20 which is formed on a surface of the base and is composed of a wiring part and an electrode part connected to the wiring part. In the method for manufacturing the wiring member, the columnar base is inserted and installed in a hollow mask, and the wiring layer is formed on the surface of the base through an opening provided in the mask.

Description

  The present invention relates to a wiring member and a method for manufacturing the wiring member.

  Conventionally, a flexible wiring board has been used for a hinge portion of a foldable mobile phone. As such a flexible wiring board, for example, a base part made of a flexible film is formed by arranging two rhombus-shaped holes side by side in the longitudinal direction through the base part and surrounding the periphery of the hole part. There is known one in which a deformable portion that can be deformed by bending in a stretching direction by a tensile force is formed (for example, see Patent Document 1).

JP 2009-259929 A (see, for example, FIG. 1, FIG. 9, paragraph 0013)

  When such a flexible wiring board is provided in the hinge portion between the first casing provided with operation keys and the second casing provided with a screen, the first casing and the second casing are folded. In this state, the flexible printed circuit board is in an extended state. And if a 1st housing | casing and a 2nd housing | casing are rotated and opened by a hinge part, it will be in the state which the flexible printed circuit board shrunk.

  Therefore, the flexible wiring board is required to have high stretchability and to be small with the recent miniaturization of mobile phones, but it cannot be said that it has been sufficiently achieved at present.

  Accordingly, an object of the present invention is to solve the above-mentioned problems of the prior art, and to provide a wiring member that is small in size and highly stretchable, and a method for manufacturing the wiring member.

  The wiring member of the present invention includes a columnar base, and a wiring layer including a wiring portion formed on the surface of the base and an electrode portion connected to the wiring portion. In the present invention, since the wiring layer is formed on the columnar substrate, the wiring member can be made smaller and more elastic than the flexible wiring board.

  In the cross section of the substrate, the length of a straight line passing through the center of the cross section and passing through two points farthest from the center of the cross section at the edge of the cross section is preferably 1 mm or less. This is because within this range, the stretchability is high and it is easy to realize downsizing.

  The substrate is preferably cylindrical. This is because it is easy to form a wiring layer by being configured in this way.

  One example is that a plurality of the wiring layers are provided. If a plurality of wiring layers can be formed on the surface, it can be used as a higher-density wiring member.

  It is preferable that the plurality of wiring layers provided have the same shape. This is because it is easy to form a wiring layer by being configured in this way.

  It is preferable that the base material is polyimide. This is because it is rich in elasticity and has high stability when a high frequency voltage is applied.

  The wiring member manufacturing method of the present invention is characterized in that a columnar base is inserted and installed in a hollow mask, and a wiring layer is formed on the surface of the base through an opening provided in the mask. . With this configuration, the wiring layer can be formed on the surface of the columnar substrate.

  After forming the wiring layer on the substrate, the substrate and the mask are relatively rotated to expose a region of the surface of the substrate where the wiring layer is not yet formed from the opening of the mask, and to the region It is preferable to form a wiring layer through the opening. With this configuration, a plurality of wiring layers having the same shape can be easily formed on the surface of the columnar base.

It is sectional drawing in (1) schematic perspective view (2) AA which shows the structure of the wiring member concerning this embodiment. It is an expanded view in the BB line of FIG. It is a schematic front view which shows the structure of a vapor deposition apparatus. It is a schematic perspective view which shows the structure of film-forming object. It is explanatory drawing for demonstrating the film-forming method. It is a schematic top view which shows the structure of a vapor deposition apparatus. It is a figure for demonstrating a vapor deposition means, (1) is an expansion schematic, (2) is the upper side figure and sectional drawing of the vapor deposition raw material in use of apparatus. It is the schematic sectional drawing and schematic plan view which show the structure of an ion source. It is an expanded view for demonstrating the structure of the wiring member concerning another embodiment.

  The wiring member of this invention and the manufacturing method of a wiring member are demonstrated using FIGS.

  The wiring member 1 includes a base material 10 and a wiring layer 20 provided on the surface 11 of the base material 10. The base material 10 has a cylindrical shape in a cross-sectional view (see FIG. 1 (2)), and has a diameter of 1 mm or less. A wiring layer 20 is provided on the surface 11 of the substrate 10. In addition, although the diameter of the base material 10 is preferable from the viewpoint of stretchability and miniaturization, it is difficult to handle, for example, 0.1 mm or less, and the wiring layer 20 is difficult to form.

  In the present embodiment, as illustrated in FIG. 2, the wiring layer 20 includes two first wiring layers 21 and two second wiring layers 22. That is, in this embodiment, four wiring layers 20 are provided for one base material 10. The 1st wiring layer 21 consists of the 1st wiring part 21a and the 1st electrode part 21b provided in the both ends of the 1st wiring part 21a. The second wiring layer 22 includes a second wiring portion 22a and second electrode portions 22b provided at both ends of the second wiring portion 22a. The first electrode portion 21b and the second electrode portion 22b (hereinafter collectively referred to as electrode portions) are perpendicular to the first wiring portion 21a and the second wiring portion 22a (hereinafter also collectively referred to as wiring portions). It is provided as follows. The electrode portion serves as a contact portion with each member when the wiring member is installed in, for example, a hinge portion of a mobile phone. Each wiring layer 20 is provided on the surface 11 of the substrate 10 at a predetermined distance.

  The first wiring layer 21 and the second wiring layer 22 have the same shape. That is, each of these electrode parts and wiring parts has the same size. For example, each of the wiring portions has a width of 10 to 80 μm and a length of the base in the longitudinal direction of 50 to 100 μm. Each of the electrodes has a length of the base in the longitudinal direction of 50 to 500 μm, and the width of the wiring portion. The length in the direction is 20 to 200 μm. In this embodiment, the length in the longitudinal direction of the wiring portion is formed longer than the length in the width direction of the electrode portion. For example, the width of the wiring portion is about 50 μm and the length in the longitudinal direction is 50 μm. The portions may be formed so that the length in the longitudinal direction of the substrate is 100 μm and the length in the width direction of the substrate is 100 μm.

  The first wiring layers 21 and the second wiring layers 22 are alternately formed in the circumferential direction. That is, the two first wiring layers 21 in the substrate 10 are configured to face each other, and the two second wiring layers 22 are also configured to face each other. The first wiring layer 21 and the second wiring layer are arranged so that the first electrode portion 21b of the first wiring layer 21 and the second electrode portion 22b of the second wiring layer 22 overlap each other in the circumferential direction. The base material 10 is formed in a shifted state in the longitudinal direction. That is, the two first wiring layers 21 are provided at the same position in the longitudinal direction of the base material 10, and the two second wiring layers 22 are more in the longitudinal direction of the base material 10 than the first wiring layer 21 in FIG. 1. It is provided at the same position shifted downward.

  The base material 10 is made of a material that can be expanded and contracted, such as a resin, so that it can be used for the hinge portion. Examples of such a resin include those usually used for flexible wiring boards, such as polyimide and polypropylene. In order to prevent deformation when forming a wiring film on these resins, it is necessary not to reach a high temperature at the time of film formation. Film formation can be performed at less than 60 ° C.

  The wiring layer 20 is made of a metal, an alloy, or the like normally used as a wiring. Preferably, copper, aluminum, nickel having high conductivity can be used, and in this embodiment, since it is formed by an ion beam assisted deposition method as described later, a material that is easy to use as an ion beam assisted deposition method, An example is copper.

  Thus, in this embodiment, the thin columnar base material 10 which consists of resin which is easy to expand-contract is used. Such a thin columnar base material 10 is more easily expanded and contracted than a plate-like printed wiring board and the like, and more easily adapted to miniaturization of a mobile phone. In this case, by providing the first wiring layer 21 and the second wiring layer 22 so that the electrode portions overlap in the circumferential direction in the longitudinal direction of the substrate 10, the wiring layers can be formed with high density.

  A method for manufacturing the wiring member 1 will be described below. As a film forming apparatus used in the method for manufacturing a wiring member, there is an ion beam assisted vapor deposition apparatus 100 shown in FIG.

  The vapor deposition apparatus 100 has a vacuum chamber 110. A vacuum exhaust device 112 is provided at the exhaust port 111 of the vacuum chamber 110. The inside of the vacuum chamber 110 can be evacuated by the evacuation apparatus 112 to make the inside of the vacuum chamber 110 into a vacuum state. Examples of such a vacuum exhaust device 112 include known vacuum pumps such as a turbo molecular pump and a cryopump. In this embodiment, a turbo molecular pump and a cryopump are used in combination.

  In the vacuum chamber 110, the deposition target S is supported on the ceiling surface of the vacuum chamber 110 by the support member 114. The film formation target S will be described with reference to FIG. The film formation target S includes a film formation base material 10 </ b> A in which a plurality of base materials 10 (see FIG. 1) that are film formation targets are connected in the length direction of the base material 10. In other words, the base material 10 shown in FIG. 1 is obtained by cutting a plurality of film-forming base materials 10A in the length direction. In this embodiment, instead of forming a film on each substrate, the tact time is improved by forming a film on a film forming substrate 10A formed by directly connecting a plurality of these substrates. I am letting.

  In such a film formation target S, the film formation substrate 10A is inserted and installed inside the cylindrical mask 200. In this embodiment, the hollow portion of the mask 200 is configured to be slightly larger than the film forming substrate 10A. The film forming substrate 10A can be easily inserted into the mask 200 and will be described later. It is possible to rotate the film forming substrate 10A. That is, the film forming substrate 10 </ b> A is supported by the support member 114 so as to be coaxial with the mask 200 and is supported by the support member 114 so as to be rotatable and movable within the mask 200. Then, by forming a film through the through-opening 201 provided in the cylindrical mask 200, the wiring layer 20 can be formed at a predetermined position of the film forming substrate 10A.

  The through-opening 201 includes a first opening 202 for forming a wiring part and a second opening 203 for forming an electrode part. A plurality of such through openings 201 are formed in the length direction of the mask 200. That is, a plurality of base materials 10 (see FIG. 1) are formed in series so as to be formed.

  In this embodiment, since the four wiring layers 20 are provided on one base material, the film forming base material 10A is rotated as follows in order to provide the four wiring layers 20 as described above. In the present embodiment, the film formation substrate 10A is supported by the support member 114 that supports the film formation target S, the film formation substrate 10A is rotated, and the mask 200 can be moved in the length direction. Further, a support member 114 is configured.

  First, as shown in FIG. 5A, film formation is performed on the film formation substrate 10A through the through opening 201. Thereby, one of the first wiring portions shown in FIG. 2 can be formed.

  Next, as shown in FIG. 5 (2), the film forming substrate 10A is rotated by 90 ° in one direction, and the film forming substrate is pushed out to one end side. In this state, film formation is performed on the film formation substrate 10 </ b> A through the through opening 201. Thereby, one of the second wiring portions shown in FIG. 2 can be formed. That is, in FIG. 5B, the film formation position is changed by rotating the film formation substrate 10A and shifting in the length direction, thereby forming the second wiring portion.

  Next, as shown in FIG. 5 (3), the film forming substrate 10A is rotated 90 ° in one direction, and the film forming substrate is pulled back to one end side. Thereby, another one of the first wiring portions shown in FIG. 2 can be formed.

  Finally, as shown in FIG. 5 (4), the film forming substrate 10A is rotated by 90 ° in one direction, and the film forming substrate is pushed out to one end side. In this state, film formation is performed on the film formation substrate 10 </ b> A through the through opening 201. Thereby, another film of the second wiring portion shown in FIG. 2 can be formed.

  In this way, by inserting one film forming substrate 10A into one mask 200 and rotating the film forming substrate 10A to change the film forming position, the substrate 10 of this embodiment (FIG. 1), four wiring layers 20 can be formed. In the present embodiment, the first wiring layer and the second wiring layer are alternately formed, but the present invention is not limited to this. Two second wiring layers may be formed after two first wiring layers are formed.

  In this embodiment, in order to form a film on a film formation target that is long in one direction, a vapor deposition unit that is long in one direction is provided. Returning to FIG. 3, the vapor deposition means 121 is provided on the bottom surface of the vacuum chamber 110 at a position facing the through opening of the mask of the film formation target S. By this vapor deposition means 121, a film is formed on a cylindrical film-forming substrate. As shown in FIG. 6, a plurality of the vapor deposition units 121 are arranged in a line along the length direction of the film formation target S.

  As shown in FIG. 7A, each vapor deposition means 121 includes a crucible 122 in which each vapor deposition raw material 122a is stored, an electron beam device 123 for melting the vapor deposition raw material 122a of the crucible 122, a magnetic field generating means 124, Have The crucibles 122 are spaced apart at equal intervals. In this embodiment, the vapor deposition raw material 122a is a circular pellet in a top view. As the vapor deposition material 122a, copper is preferable as a wiring material.

  The electron beam device 123 is provided in the vicinity of the crucible 122. The electron beam device 123 is installed so that the electron beam to be emitted can irradiate each deposition raw material 122a. By irradiating the vapor deposition raw material 122a with the electron beam, the vapor deposition raw material 122a melts, and vapor deposition particles adhere to and deposit on the processing surface of the film formation target S.

  In the present embodiment, the electron beam from the electron beam device 123 is emitted only in the direction in which the beam shape (cross-sectional shape of the irradiated beam) when the vapor deposition material 122 a is irradiated is orthogonal to the direction in which the vapor deposition means 121 is juxtaposed. The magnetic field generating means 124 is installed on the opposite side of the crucible 122 from the electron beam device 123 so that it is in focus (is in focus). In other words, the vapor deposition means 121 is configured such that the electron beam irradiated to the vapor deposition raw material 122a becomes a linear shape (an elliptical shape with an aspect ratio of 3) parallel to the parallel arrangement direction by the magnetic field generation means 124.

  The magnetic field generating means 124 is a magnet provided as a core and provided with a coil on the outer periphery thereof. By controlling the current to the magnetic field generating means 124, the intensity of the generated magnetic field is adjusted to adjust the focus of the electron beam. To do. In the present embodiment, the vapor deposition unit 121 includes only the magnetic field generation unit 124 as the magnetic field generation unit, and another magnetic field generation unit 124 a is provided at a position orthogonal to the crucible 122 and the electron beam device 123. I don't have it. The conventional vapor deposition means is further configured to have another magnetic field generation means 124a so that the direction in which the vapor deposition means 121 are juxtaposed is also focused (focused), but in this embodiment, vapor deposition is performed. Since the means 121 does not have the separate magnetic field generating means 124 a and has only the magnetic field generating means 124, the electron beam is focused only in the direction orthogonal to the direction in which the vapor deposition means 121 is arranged in parallel. The beam shape at the time of irradiation of the vapor deposition raw material 122a is a non-circular shape.

  In this embodiment, the electron beam device 123 is configured to sweep the electron beam in the direction in which the vapor deposition means 121 is arranged in parallel (the longitudinal direction of the vapor deposition material provided in a line shape). An electron beam whose beam shape is linear along the parallel arrangement direction can be swept in the parallel arrangement direction of the vapor deposition means 121, so that the vapor deposition particles melted and released from the vapor deposition raw material 122a are deposited on the vapor deposition raw material 122a of the film formation target S. It can be attached not only to the opposing region but also to the region that does not face the vapor deposition material 122a.

  By sweeping such a linear electron beam in the direction in which the vapor deposition means 121 are arranged, the vapor deposition raw material 122a is aligned with the direction in which the vapor deposition means 121 is arranged in a top view as shown in FIG. It gradually melts from the center line. Then, by being melted, the vapor deposition raw material 122a changes its shape so that the recess has a V shape in a cross-sectional view.

  Thus, each vapor deposition raw material 122a is melted from the center line portion along the juxtaposition direction of the vapor deposition means 121, and the electron beam is swept to form a linear shape over the entire width direction of the film formation target S. The vapor deposition particles from the respective vapor deposition raw materials 122a adhere to. That is, in this embodiment, since the beam shape of the electron beam when irradiating the vapor deposition material 122a is linear, the vapor deposition particles adhere across the width direction of the film formation target S, and thus the obtained film It is possible to perform film formation so that the film thickness and film quality are uniform. Incidentally, if the electron beam apparatus has a focal point in the direction orthogonal to the juxtaposed direction and is also in focus in the juxtaposed direction, the vapor deposition material 122a along the juxtaposed direction as in this embodiment. Therefore, the film cannot be uniformly formed over the width direction of the film formation target S.

  Further, since vapor deposition particles can be attached even in a region not facing the vapor deposition raw material 122a in this way, it is not necessary to arrange the vapor deposition raw material 122a in a line without gaps, and as a result, the vapor deposition raw materials 122a are arranged without gaps. Manufacturing cost can be suppressed more. In this way, the vapor deposition raw materials 122a can be provided apart from each other, and the electron beam device 123 may be installed according to the number of the vapor deposition raw materials 122a. Therefore, the power consumption is higher than when the vapor deposition raw materials 122a are arranged without gaps. The amount can be suppressed.

  Returning to FIG. 3 and FIG. 6, a plurality of first ion sources 131 are arranged in the vacuum chamber 110 along the direction in which the vapor deposition units 121 are arranged on the upstream side (reverse side) of the film formation target S in the traveling direction. It is installed. That is, the row in which the first ion sources 131 are arranged in parallel is parallel to the row in which the vapor deposition means 121 is arranged in parallel.

  The vacuum chamber 110 is further provided with a plurality of voltage applying means 132. The voltage applying unit 132 is, for example, a DC power source, and the positive voltage side is connected to each first ion source 131 and the negative voltage side is connected to the support member 114.

  As will be described in detail later, the first ion source 131 which is a film formation assist unit of the vapor deposition unit 121 generates ions therein and supplies ions from the generated ions. The ion beam is emitted toward the film formation target S. Then, the emitted ion beam reaches the film formation target S by the electric field formed between the first ion source 131 and the film formation target S by the voltage applying unit 132, and forms the film formation base through the through opening. A desired film is formed by reacting with or adhering to the vapor deposition particles deposited on the surface of the material.

  Here, the first ion source 131 will be described in detail with reference to FIG.

  The first ion source 131 includes a housing 141 and an anode unit 142 that functions as an anode electrode housed in the housing 141. The anode part 142 has a mortar-shaped recess 143 at the center. A space formed by the recess 143 becomes an ion formation space 144. The surface of the recess 143 of the anode part 142 is covered with a TiN film. Thereby, the surface of the recess 143 is not roughened when the plasma is formed, and the plasma can be stably formed.

  A first filament 145 that also functions as a cathode is provided at a position facing the recess 143. The first filament 145 is provided with voltage application means (not shown), and a voltage can be applied to the first filament 145.

  The recess 143 is provided with a protrusion 146 at the bottom thereof. The protrusion 146 protrudes toward the ion formation space 144 and has an arc shape in a cross-sectional view. By providing such a protrusion 146, electrons emitted from the cathode can be efficiently confined in the ion formation space 144.

  The housing 141 is provided with a first through hole 151. The first through hole 151 passes through the wall surface of the housing 141. A gap 152 is provided between the housing 141 and the anode part 142. The first through hole 151 faces the gap 152. The anode part 142 is provided with a second through hole 153 that penetrates the anode part 142. The second through-hole 153 faces the gap 152 on one end side and faces the ion formation space 144 on the other end side. That is, the gap 152 and the ion formation space 144 communicate with each other through the second through hole 153. In addition, as shown in FIG.4 (b), the 2nd through-hole 153 is provided with two or more.

  The first through hole 151, the gap 152, and the second through hole 153 constitute a gas introduction path for introducing gas into the ion formation space 144. That is, a gas supply line (not shown) communicates with the first through hole 151, and gas is introduced into the ion formation space 144 through the gas introduction path. Examples of the gas for forming the wiring layer include rare gases such as argon gas and helium gas. In this embodiment, argon gas can be used.

  A magnet 147 is provided on the opposite side of the anode portion 142 from the recess 143. The magnet 147 forms a magnetic field orthogonal to the electric field formed between the first filament 145 serving as the cathode and the anode part 142, and plasma is formed in the ion formation space 144 when the gas is introduced.

  In this case, a cooling means 148 is provided behind the protrusion 146 of the anode portion 142 (on the side opposite to the ion formation space 144) in order to prevent the first ion source 131 from becoming very hot. ing. In this embodiment, the cooling means 148 is a water cooling means, and is configured so that the anode portion 142 can be cooled by allowing the coolant to pass through the cooling means 148.

  In addition, the first ion source 131 is configured such that a voltage is applied from the voltage application unit 132 (see FIG. 3) to the anode unit 142, and the voltage applied by the voltage application unit 132 is 200 V or less. It is. In this embodiment, since it is an end-hole type ion source and can be DC-discharged, a large current can flow even when a low voltage is applied, and stable ionization is possible.

  As shown in FIG. 3 and FIG. 6, the first filaments 106 are disposed on the vapor deposition means 121 side of the first ion sources 131 at positions facing the first ion sources 131 apart from the first ion sources 131. Is provided. That is, a plurality of second filaments 106 are arranged in a line along the direction in which the vapor deposition means 121 is arranged. The second filament 106 is provided with a filament voltage applying means 161 (not shown in FIG. 6). In the present embodiment, a predetermined voltage, that is, a DC voltage of −5 kV is applied to the second filament 106 from the filament voltage application unit 161. Such a predetermined voltage may be in the range of, for example, −4 to −10 kV.

  By applying a predetermined voltage to the second filament 106 in this way, the plasma formed by the first ion source 131 receiving electrons generated from the second filament 106 becomes larger, and as a result, a stable ion beam is obtained. Can be formed.

  Further, a plurality of second ion sources 163 are arranged in parallel along the direction in which the vapor deposition means 121 is arranged on the opposite side of the vapor deposition means 121 from the first ion source 131, that is, on the upstream side in the traveling direction of the film formation target S. It is installed. The second ion source 163 is configured to emit an argon ion current and anneal the formed film so that the surface of the film formed on the deposition target S can be annealed. Has been. As such a second ion source 163, one having the same configuration as that of the first ion source 131 described above may be used, and different as long as an ion current such as argon for annealing can be emitted. You may use the thing of a structure.

  A film forming method using the ion beam assisted vapor deposition apparatus 100 will be described.

First, the inside of the vacuum chamber 110 is evacuated by the evacuation device 112 to obtain a vacuum state of about 10 ⁻⁵ Torr (1.33 × 10 ⁻⁴ Pa).

  After a predetermined vacuum state is reached, the deposition material 122a is melted linearly by melting while irradiating the deposition material 122a with a linear electron beam emitted from the electron beam device 123. As a result, the vapor deposition material 122a evaporates and is uniformly deposited on the surface of the film formation substrate through the through-opening of the mask of the film formation target S. The output of the electron beam device 123 can be controlled so that the deposition rate of the film becomes a substantially constant deposition rate. The deposition rate is preferably 0.5 to 10 nm / s. If the deposition rate is faster than this range, the density of the film becomes rough and the quality of the film deteriorates. If the deposition rate is slower than this range, it takes too much time to form the film, which is not practical. A practically preferable deposition rate is 1 to 5 nm / s while obtaining a film having a more preferable film quality.

  In this way, the deposition source 122a is evaporated and deposited, and at the same time, an ion beam is irradiated from the first ion source 131 onto the film formation target S. In the present embodiment, the first ion source 131 applies a voltage to the first filament 145 to emit thermoelectrons while introducing the gas from the gas introduction path into the ion formation space 144. The emitted thermoelectrons are accelerated and moved to the anode part 142 side by an electric field formed between the first filament 145 functioning as a cathode and the anode part 142 while spirally moving by the magnetic field formed by the magnet 147. To do. The introduced gas is turned into plasma, that is, ionized, in the ion formation space 144. The ion beam thus formed is irradiated toward the substrate serving as the ground. That is, positively charged ions are extracted from the argon gas plasma introduced into the first ion source 131, accelerated by the acceleration voltage of the voltage application means 132, and released toward the film formation target S.

  And a desired wiring layer is formed when an ion contacts the film | membrane uniformly deposited on the surface of the film-forming base material.

  Next, as shown in FIGS. 5 (2) to (3), the positions of the mask 200 and the film-forming substrate 10A are sequentially changed to change the film formation on the film-forming substrate 10A four times. Then, the wiring member 1 made of the base material 10 provided with four wiring layers 20 as shown in FIG. 1 is formed.

  As described above, in this embodiment, a plurality of wiring films can be easily and accurately formed by sequentially changing the positions of the mask 200 and the film forming substrate 10A.

  Moreover, in this embodiment, since it forms into a film by the ion beam assist vapor deposition apparatus 100, since film-forming temperature is low, it can suppress damaging the film-forming base material 10A which consists of resin. Further, when the film is formed by the ion beam assisted vapor deposition apparatus 100, the film can be formed with high density, and therefore, the wiring layer can be formed with good adhesion to the surface of the substrate 10.

  In this case, in the ion beam assisted vapor deposition apparatus 100 of the present embodiment, a plurality of vapor deposition means 121 are arranged so as to form a line, and a plurality of first ion sources 131 are arranged, so that the formation is long in one direction. It is possible to form a film on the film object S. In this case, since the beam shape of the electron beam from the electron beam device 123 included in the vapor deposition unit 121 is non-circular, the vapor deposition particles uniformly adhere along the length direction of the film formation target S and the film thickness is uniform. It is possible to form a film with uniform film quality.

  In the present embodiment, four wiring layers 20 are provided as shown in FIG. 2, but the present invention is not limited to this. Four or more may be provided in relation to the size of the substrate 10, or 1 to 3 may be provided. In the present embodiment, the wiring layer 20 is provided with two sets of wiring layers at the same position in the length direction. However, the present invention is not limited to this. For example, as shown in FIG. 9, the wiring layers may be formed so as to be separated from each other by a predetermined distance in the circumferential direction, and the wiring layers may be shifted downward in FIG. That is, in FIG. 9, the wiring layer 23 is provided so that the electrode portions overlap each other in the circumferential direction on the surface 11 of the base material, and is provided by being shifted in the length direction, as in the embodiment shown in FIG. 1. The wiring layer is formed with high density while maintaining elasticity.

  In the present embodiment, as shown in FIG. 5, the four wiring layers 20 are formed by rotating the film forming substrate 10A with respect to one mask 200, but the present invention is not limited to this. A plurality of masks may be prepared, and different masks may be provided for each wiring layer to be formed. With this configuration, even wiring layers having different shapes can be formed.

  In the present embodiment, the base material 10 is cylindrical, but is not limited thereto. For example, a prismatic or elliptical substrate may be used as the substrate 10. In this case, it is impossible to rotate only the film forming substrate by inserting the film forming substrate into the cylindrical mask at the time of forming the wiring layer. Do. Further, the shape of the mask may be set according to the cross-sectional shape of the substrate 10. Even when the substrate 10 having a non-cylindrical shape is used as described above, a straight line that passes through the center of the cross section and passes through the two points farthest from the center of the cross section in the cross section of the base material 10. The length of is preferably 1 mm or less. That is, if the cross-sectional shape of the substrate is rectangular, the length of the diagonal line is 1 mm or less, and if the cross-sectional shape is elliptical, the length of the long side is 1 mm or less. This is because within this range, the stretchability is high and it is easy to realize downsizing.

  Moreover, although the column-shaped thing was shown as the base material 10, you may use a cylindrical thing. In this case, the stretchability can be further improved as compared with the cylindrical shape. Furthermore, it is preferable that an electrode film is formed in a hollow portion inside the cylindrical shape, whereby an earth can be formed.

  In the present embodiment, the film is formed by the ion beam assisted vapor deposition apparatus 100 as the film forming apparatus, but is not limited thereto. It is only necessary that the film can be formed with high accuracy without damaging the base material.

  In the present embodiment, the electron beam has a linear shape, but the present invention is not limited to this. The beam shape is a non-circular shape (aspect ratio is 2 to 10), and the parallel direction of the vapor deposition means 121 and the longitudinal direction of the beam shape need only coincide. By comprising in this way, it can form into a film over the width direction (direction orthogonal to the running direction of the film-forming object S) of the film-forming object S. In addition, it is possible to make a film thickness and film | membrane quality more uniform by comprising so that it may become linear instead of elliptical shape like this embodiment.

DESCRIPTION OF SYMBOLS 1 Wiring member 10 Base material 10A Film-forming base material 11 Surface 14 Support member 20 Wiring layer 21 1st wiring layer 21a 1st wiring part 21b 1st electrode part 22 2nd wiring layer 22a 2nd wiring part 22b 2nd electrode part 23 Wiring layer 100 Ion beam assisted vapor deposition apparatus 106 Filament 110 Vacuum chamber 111 Exhaust port 112 Vacuum exhaust apparatus 114 Support member 121 Deposition means 122a Deposition raw material 122 Crucible 123 Electron beam apparatus 124 Magnetic field generation means 131 First ion source 132 Voltage application means 141 Housing Body 142 Anode 143 Recess 144 Ion formation space 145 Filament 146 Protrusion 147 Magnet 148 Cooling means 151 Through hole 152 Gap 153 Through hole 161 Filament voltage applying means 163 Second ion source 200 Mask 201 Through opening

Claims (8)

  A wiring member comprising: a columnar base; and a wiring layer including a wiring part formed on a surface of the base and an electrode part connected to the wiring part.   In the cross section of the substrate, the length of a straight line passing through the center of the cross section and passing through two points farthest from the center of the cross section at the edge of the cross section is 1 mm or less .   The wiring member according to claim 1, wherein the base is cylindrical.   The wiring member according to claim 1, wherein a plurality of the wiring layers are provided.   The wiring member according to claim 4, wherein the plurality of wiring layers have the same shape.   The said base material is a polyimide, The wiring member as described in any one of Claims 1-5 characterized by the above-mentioned. A columnar base is inserted and installed in a hollow mask,
A method for manufacturing a wiring member, comprising forming a wiring layer on the surface of the substrate through an opening provided in the mask. After forming a wiring layer on the substrate,
The substrate and the mask are relatively rotated to expose a region of the surface of the substrate where the wiring layer is not yet formed from the opening of the mask, and a wiring layer is formed in the region through the opening. The method for manufacturing a wiring member according to claim 7.