JP2012243831A - Pattern inspection device and inspection method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inspection device or an inspection method capable of inspecting samples, like a wafer and a mask, having an equivalent circuit pattern formed thereon but different shapes, by using one device.SOLUTION: Since the inspection device includes a plurality of transportation holders corresponding to a plurality of samples having different shapes, different samples can be inspected in the same sample chamber. Furthermore, since the inspection device includes a function of collating the inspection results for both samples, the relation between a defect and the cause of the defect can be analyzed easily.

Description

  The present invention relates to a substrate manufacturing method and apparatus having a fine pattern such as a semiconductor device, a liquid crystal, a photomask, and a nanoimprint, and more particularly to a technique for inspecting a semiconductor device and a mask pattern using an electron beam.

  Patent Document 1 (Japanese Patent Application Laid-Open No. 2007-059176) discloses a technique of irradiating ultraviolet light for cleaning an observation portion when observing a mask with an electron microscope. Further, in Patent Document 2 (Japanese Patent Laid-Open No. 2007-220471), a circuit pattern image on a mask acquired in advance with an electron microscope for mask is displayed simultaneously when an electron beam image is acquired with an electron microscope for wafer. Technology is disclosed.

JP 2007-059176 A JP 2007-220471 A

  First, the background of the present invention will be described using a semiconductor device as an example.

  In manufacturing a semiconductor device, a pattern necessary for circuit formation is designed by CAD, and this design data is formed on a photomask (reticle). That is, the design pattern shape is formed as a light shielding film on a transparent substrate. A circuit pattern is formed on a semiconductor wafer by loading the photomask into a reduction exposure apparatus and exposing and imaging light passing through the photomask on a wafer coated with a photoconductor. Since the reduction ratio of the reduction exposure apparatus is generally 1/4 to 1/5, the pattern on the mask is enlarged 4 to 5 times the pattern on the wafer.

  In recent years, along with circuit miniaturization of semiconductor devices, patterns formed on wafers and patterns formed on masks have become smaller. In order to form a pattern having a size smaller than the wavelength of light used for exposure by a reduction exposure apparatus on a wafer, a phase shift method or an OPC technique is used in the mask. On the other hand, when a minute pattern abnormality or defect occurs on the mask, it is difficult to know in advance what shape and size is transferred on the wafer due to the aberration and diffraction of the exposure apparatus. Yes. In such a situation, the EUV lithography further eliminates the protective film of the mask, which may cause foreign matters and defects on the mask during use and handling. In addition, since the substrate is a multilayer film, defects existing on the mask may not be transferred to the wafer, or defects embedded in the multilayer film and difficult to detect by mask inspection may be transferred onto the wafer. In the inspection of only the mask or the inspection of only the wafer, it is difficult to determine the dimensional relationship, the cause of the defect, and the fatality.

  In the conventional technology so far, for example, a semiconductor device (wafer) is inspected by an inspection device dedicated to the wafer, and the inspection coordinate data for the wafer is used to observe and measure the dimensions with an electron microscope dedicated to the wafer. On the other hand, the same applies to photomasks, in which inspection is performed with a mask-dedicated inspection apparatus, and observation and dimensions are measured with a mask-dedicated electron microscope using mask coordinate data. As described above, for example, in EUV lithography, since the protective film of the mask is lost, there is a possibility that foreign matters and defects are generated on the mask during use and handling.

  In addition, since the substrate is a multilayer film, defects existing on the mask may not be transferred to the wafer, or defects embedded in the multilayer film and difficult to detect by mask inspection may be transferred onto the wafer. It is necessary to collate the mask inspection and the result transferred to the wafer. In the prior art, enormous time and effort are required for collation and review of such mask inspection results and wafer inspection results.

  Similarly, in nanoimprinting, it is not possible to use the same device to collate the template that is the print template and the transferred pattern, so it takes a lot of time to inspect and collate separately with different devices. It was.

  An object of the present invention is to solve the above-mentioned problems, and in a substrate on which a pattern such as a semiconductor device, a liquid crystal or a photomask is formed, an equivalent circuit pattern is formed, for example, a wafer and a mask, but the shapes are different. An object of the present invention is to provide an inspection apparatus capable of inspecting a sample with one apparatus.

  In order to solve the above-described problems, in the present invention, first, a plurality of load ports capable of being conveyed are provided for a plurality of sample shapes. In addition, a plurality of sample exchange chambers are provided in front of the sample chamber, and a holder for placing the sample is provided in each sample exchange chamber. The shape, height, and sample holding method of the holder depend on each sample shape, and the sample is set at a height that can be observed by the electron optical system in the sample chamber. Moreover, since the guide on the bottom surface of the holder and the attachment to the stage have the same structure, a single stage can handle a plurality of holders. In this way, for example, a photomask and a semiconductor wafer are loaded into the same apparatus so that they can be observed or measured with an electron beam microscope.

  Next, by providing coordinate conversion means and a medium for converting a mask or wafer inspection result file or a coordinate data file to be measured into both a mask coordinate and a coordinate on the wafer, a mask and wafer can be detected with one inspection result. Both can be observed or measured with the same device (electron microscope).

  In addition, the results of checking both the wafer and mask are collated, the function of classifying the defect type according to the collation result and the function of collating the dimensions to obtain the magnification ratio at the time of transfer are provided, and the classified code or magnification ratio at the time of transfer is provided. Is added to the inspection result, and the inspection result data can be output to the outside.

  As a result, it is possible to observe or dimension the SEM image of both the mask and the wafer with the same inspection apparatus without using a plurality of apparatuses or performing complicated data processing manually, for example, whether the defect is caused by the mask. It is possible to classify whether the defect is caused by a process, classify whether a defect is fatal or non-fatal, and obtain, for example, a pattern dimension variation ratio.

  The same applies to the nanoimprint template and the transfer substrate.

  According to the present invention, the quality of the photomask and the quality of the wafer transfer can be efficiently evaluated in a short time, and the quality of the semiconductor device can be improved by applying the mask whose quality is controlled by this technology. It is possible to increase the reliability of the apparatus and the like and contribute to shortening the period required to reduce the defect rate.

FIG. 2 is an apparatus configuration diagram for explaining the first embodiment. The top view of the apparatus shown in FIG. The top view of the apparatus shown in FIG. The top view of the apparatus shown in FIG. Sectional drawing at the time of mounting data on a sample holder. Sectional drawing at the time of mounting data on a sample holder. Explanatory drawing of a mask coordinate system. Explanatory drawing of a wafer coordinate system. The figure which shows the flow of coordinate transformation. The figure which shows the flow of a test | inspection. The figure which shows the electron beam image at the time of a test | inspection. The figure which shows the example of the determination result of a collation result.

(First embodiment)
In this embodiment, a case of inspecting a photomask as a first sample and a wafer as a second sample will be described with reference to the drawings.

  FIG. 1 is a block diagram showing the overall configuration of the inspection apparatus according to the first embodiment. As shown in FIG. 1, the inspection apparatus 100 of this embodiment is for transferring a sample 104 to a loader for placing a sample cassette 101, a transfer unit 102 for transferring a sample 104, and a sample chamber 106 that is a vacuum chamber. Sample exchange chamber 103, sample chamber 106, operation unit 124, control unit 123 that controls each unit, column control unit 121 that controls the electron optical system according to a command from the control unit 123, and a stage that controls the stage A control unit 120 and a signal control unit 119 that images a signal from the detector 117 and stores the signal in the storage unit 122 are configured. In the sample chamber 106, there are an electron optical system and a stage, and an electron source 107, an extraction electrode 108, a lens 109, a diaphragm 110, a reflecting plate 111 for collecting secondary electrons, a deflector 112, an objective lens 113, and an electrode on the sample. 114, an X stage 115, a Y stage 116, a height sensor 117, and a detector 118.

  The sample 104 is loaded from the sample cassette 101 in the loader onto the sample holder 105 in the sample exchange chamber 103 by the transport unit 102. In the sample exchange chamber 103, a vacuum is drawn when the sample 104 is placed, and the sample is transferred to the sample chamber 106 when a predetermined degree of vacuum is reached. In the sample chamber 106, the stages 115 and 116 move near the sample exchange chamber 103, and the sample holder 105 is pushed and fixed onto the stage 115 with the sample 104 placed thereon, and the opening 127 of the sample exchange chamber 103 is closed. It is done. When the opening 127 is closed and the inside of the sample chamber 106 reaches a predetermined degree of vacuum, the stages 115 and 116 move to predetermined coordinates to acquire an electron beam image. The electron beam is emitted from the electron source 107, accelerated by the extraction electrode 108, narrowed by the lens 109, passes through the diaphragm 110, and is narrowed by the objective lens 113 to be focused on the sample 104. This electron beam is scanned by the deflector 112, and in synchronization with this, a signal is sequentially detected by the detector 118, and the signal value is converted into a gray value to obtain an electron beam image. In order to collect secondary electrons or reflected electrons in the detector 118, a reflecting plate 111 is used. A voltage can be applied to the sample stage 105, and the energy of the electron beam applied to the sample can be adjusted. Since a voltage is also applied to the electron source 107 and the extraction electrode 108, energy applied to the sample is controlled by a combination of these voltage adjustments. The signal detected by the detector 118 is converted and imaged by the signal control unit 119 and stored in the storage unit 122 when stored. A series of these operations is executed when a command is input from the operation unit 124 and the control unit 123 gives a control command to each unit based on the command. Further, the control unit 123 is connected to the outside through network communication or the like, and can access the external database 125. For example, coordinate data inspected by another apparatus can be exchanged, or inspection result data and stored image data of the inspection apparatus of this embodiment can be output.

  FIG. 2A shows a top view of the inspection apparatus of the present embodiment shown in FIG. A sample cassette 101 containing a photomask as a first sample and a sample cassette 101 ′ containing a wafer as a second sample can be placed on the loader unit. If only one of them is inspected, one of them may be placed. The transport system and the sample exchange chamber each have two types of sample holders. In the case of the first sample, the transport unit 102 takes out the sample 104 from the sample cassette 101, opens the sample exchange chamber 103 in vacuum, and opens the opening 126. Opens, the sample 104 is placed on the sample holder 105, the opening 126 shown in FIG. 1 is closed, and vacuuming is performed. When the predetermined degree of vacuum is reached, the opening 127 is opened, the stages 115 and 116 are moved to the vicinity of the sample exchange chamber 103, and the sample holder 105 is pushed out to the stage as shown in FIG. Once fixed. After the opening 127 is closed, the stage is moved to a predetermined coordinate, and an inspection with an electron beam image is performed. When the inspection is completed, the first sample 104 is returned to the original cassette 101 in the reverse procedure described above.

  In the case of inspecting the second sample, similarly, the second sample 104 ′ is moved from the cassette 101 ′ to the sample holder 105 ′ in the sample exchange chamber 103 ′ by the transport unit 102 ′. The stages 115 and 116 move to the vicinity of the sample exchange chamber 103 ', the opening 127' is opened, and as shown in FIG. 2C, the material holder 105 'on which the sample 104' is placed is pushed out to the stage and reaches a predetermined position. Once fixed.

  FIG. 3 shows a schematic cross-sectional view when a sample is placed on the sample holder 105 shown in FIGS. 1 and 2 and conveyed to the sample chamber. FIG. 3A shows the case of the first sample (photomask), and FIG. 3B shows the case of the second sample (wafer). The first sample holder 105 has a holding configuration that matches the size and rectangle of the mask 104, and the height of the mask surface is set to a predetermined height with respect to the electron optical system. The second sample holder 105 ′ has a holding configuration that matches the size and circle of the wafer 104 ′, and when the wafer is placed on the second sample holder 105 ′, the height of the wafer surface becomes an electron. It has a predetermined height with respect to the optical system. In this way, when inspecting a plurality of specimens to be inspected with the same inspection apparatus 100, the bottom surface structure of each sample holder is the same with respect to the stage, so that the method for moving and fixing to the sample stage is common. After fixing, it is only necessary to move according to a movement command to a predetermined coordinate.

  On the other hand, for the electron optical system, the holding method and thickness of the sample holder are different from the shape and thickness of each sample having different shapes so that the surface height is almost the same even for samples having different shapes. By adjusting, an electron beam image can be acquired by the same electron optical system. Depending on the sample, a quartz substrate that is an insulator may be used, a semiconductor substrate such as a silicon crystal may be used, or a conductive substrate such as a metal may be used. Even with the same electron optical system, irradiation is performed. It is necessary to optimize the electron beam conditions (irradiation energy, electron beam current). Since the means for changing the irradiation energy is as described above, it is omitted here. Such optimum conditions can be applied by calling the optimum conditions registered in advance by inputting inspection conditions and recipe information from the operation unit 124. At that time, in order to control the charged state of the surface of the sample to be inspected, the condition of the voltage applied to the on-sample electrode 114 may be changed in addition to the electron beam irradiation condition.

  Next, a method for inspecting using the inspection apparatus 100 of the present embodiment will be described. First, FIG. 4 shows an example of a coordinate system of a mask that is a first sample. The shape is rectangular, and the origin of the mask is the center of the mask, which is the intersection of the four corners of the mask. Since the pattern shape is inverted and transferred when transferred by the reduction exposure apparatus, the X coordinate 201 of the mask is in the mirror inverted direction, and the Y coordinate 202 is in the same direction as on the wafer. Further, since the pattern dimension is larger than the wafer according to the reduction ratio at the time of reduction exposure, the coordinates need to be converted at the same magnification. In this embodiment, a case where the reduction ratio is 1: 4 will be described.

  Next, an example of the coordinate system on the wafer is shown in FIG. The shot 203 is divided in units to be exposed and the die 209 is a repeating unit. In the coordinate system of the shot 203, the lower left corner of the shot is the origin 204, and the coordinates are the shot X direction 205 and the shot Y direction 206. Similarly, in the case of the die 207 unit, the lower left corner of the die is the origin 208, which is the coordinates of the die X direction 209 and the die Y direction 210.

  Thus, when inspecting equivalent pattern portions on the mask and the wafer with samples having different shapes and magnifications, the coordinate conversion shown in FIG. 6 is necessary. FIG. 6A shows a flow for converting mask coordinates into wafer coordinates. For the mask coordinate values MX1, MY1 (300), the offset of the origin deviation amount unique to the apparatus is adjusted (301). Next, the origin 200, which is the center of the mask, is converted into the corner origin of the exposure pattern (302), and in order to match the coordinate magnification on the wafer, here the coordinate value is reduced to a quarter according to the reduction ratio ( 303). Then, the direction of the coordinate system is mirror-inverted (304), and further offset adjustment is performed in accordance with the shot origin of the wafer coordinates. If the coordinates are set to die coordinates, the origin position is further adjusted in accordance with die division and die size (306). Conversely, a flow for converting wafer coordinates into mask coordinates is shown in FIG. 6B.

  A method of actually inspecting a sample to be inspected using the inspection apparatus of FIG. 1 will be described with reference to FIG. The inspection is started by inputting necessary information from the operation unit 125 (400). First, the type of sample to be inspected is selected (401). Thereby, a cassette and a sample holder are selected, and an optimum inspection recipe registration directory is also selected. From the operation screen, the electron beam irradiation conditions and the inspection recipe are loaded (402, 403). The inspection recipe includes selection of coordinate data to be inspected and information selection of a pattern transferred to the wafer to be inspected. Next, when the coordinate data loaded by the recipe is not the same coordinate system as the sample to be inspected, coordinate conversion is performed by the method shown in FIG. specify. Then, the designated first inspection sample is loaded (405).

  Next, alignment for determining and correcting the position and rotation amount of the sample is executed using the optical microscope image and electron beam image of the pattern formed on the sample to be inspected (406). Furthermore, after moving to a known pattern and correcting the offset amount of the coordinates (407), the stage is moved based on the coordinates loaded and coordinate-converted in the above recipe to acquire an electron beam image, and the image is acquired as necessary. Save or measure dimensions (408). In this way, the inspection is executed for a desired portion, the result is saved as a file, and the result is output as necessary (409).

  When the inspection of the first sample is completed, it is selected whether to inspect the second sample subsequently. When the second sample is selected, the inspection is executed in the same flow from the selection of the sample type shown in the flow 401 of FIG. When the inspection of the second sample is completed, the result is saved as a file in the same manner as the first sample (409). Thereafter, the inspection result of the first sample and the second inspection result are collated (412), the defect type, factor, size ratio, etc. are classified (413), and the classification result is inspected for the first and second samples. The result file is appended or changed, the result is output as necessary (414), and the inspection is terminated (415). Note that the sample unload timing does not have to follow the flow of FIG. If the second sample is not subsequently inspected, another past inspection result can be selected and collated with the selected result file (412). Furthermore, not only two types of test results but also three or more types of test results can be collated (412).

  FIG. 8 shows an example of an image acquired at the time of inspection. FIG. 8A is an electron beam image 500 of point 1 acquired at the time of mask inspection, and a linear pattern 501 is formed on the substrate 502. A defect 503 exists on the substrate 502 between the lines. Next, a location (point 1) corresponding to the coordinates on the mask was inspected on the wafer. The result is an electron beam image 504 on the wafer shown in FIG. A pattern 505 formed of a material such as a photoresist exists on the film 506 formed in the lower layer. As a result of inspecting the electron beam image, it was found that the defect 507 was transferred to the point 1 point. Therefore, it was determined that the defect 503 at the point 1 on the mask is a fatal defect transferred to the wafer. The coordinates of point 2 were similarly examined. (3) The figure is an electron beam image 508 at point 2 on the mask. The pattern and the substrate are formed in the same manner. At point 2, a defect 509 exists along a linear pattern. A portion corresponding to this point 2 was inspected with a wafer. (4) The figure is an electron beam image 510 on the wafer at point 2. As a result of inspecting the electron beam image 510, no defect was recognized on the wafer. Therefore, the mask-like defect at point 2 is a non-fatal defect that is not transferred to the wafer, but its presence on the mask has been confirmed, so it has been determined that it needs attention. Further, the point 3 was similarly examined. (5) The figure is an electron beam image 511 obtained by inspecting the point 3 on the mask. As a result of the inspection, no defects were recognized. As for the point 3 on the wafer, no defect was recognized as a result of the inspection of the electron beam image 512 shown in FIG. Therefore, the coordinates of the point 3 were determined to be erroneous detection by the prior inspection apparatus.

  Table A in FIG. 9 shows the results of checking and determining with the inspection results in FIG. Thus, by collating and inspecting both the mask and the wafer using the coordinate data of the same inspection result, it is possible to roughly classify whether the defect fatality and the cause of the defect are a mask or a process. Table B in FIG. 9 is for the case where the collation inspection is performed based on the coordinates of the wafer inspection result. Further, Table C in FIG. 9 is an inspection in which the dimensions of the pattern coordinates registered in advance are measured with both the mask and the wafer, and the dimension ratio is obtained.

  According to the inspection apparatus and the inspection method of the present embodiment, a plurality of samples can be loaded on the same apparatus and can be inspected with an electron beam image based on the same coordinate data. In addition, since it is possible to inspect the transfer source and the transfer destination sample, such as a mask and a wafer, for example, if defect coordinate data on the mask is used, the criticality of the defect is determined by verification. Can do. On the other hand, if the defect coordinate data on the wafer is used, it can be determined whether the cause of the defect is a process or a mask. In this manner, since the defect and quality control of the mask can be performed, the reliability of manufacturing the semiconductor device can be improved. In addition, since it is possible to manage the relationship with the exposure process margin and the size, the quality of the exposure process can be controlled, and the mask quality and the exposure process can be optimized. As a result, the semiconductor yield and productivity can be improved. Can contribute to the improvement.

(Second embodiment)
In the present embodiment, a configuration example of a pattern inspection apparatus in the case where the first sample (photomask) described in the first embodiment is a template used in nanoimprint and the second sample is a wafer is shown. The overall configuration, functions, and operations of the apparatus are the same as in the first embodiment, and a description thereof is omitted.

  The template has a circuit pattern formed in the same manner as the mask. However, since the template is not reduced at the time of transfer, magnification conversion at the time of coordinate conversion becomes unnecessary. In addition, the pattern irregularities are reversed between the template and the wafer.

  According to the present embodiment, the same effects as those of the first embodiment can be realized for a wafer on which a pattern is drawn by nanoimprinting. Further, it can contribute to quality control of the template and can improve productivity.

  As described above, the typical apparatus configuration and the inspection method according to the present invention have been described with respect to specific examples of the operation of each part, the inspection flow, the operation procedure, the collation method, etc. It goes without saying that an inspection apparatus and an inspection method combining a plurality of features can be implemented without departing from the scope of the present invention.

  In addition, the inspection apparatus and the inspection method described so far enable a plurality of samples to be loaded into the same apparatus, and can be inspected with an electron beam image based on the same coordinate data. In addition, since it is possible to inspect the transfer source and the transfer destination sample, such as a mask and a wafer, for example, if defect coordinate data on the mask is used, the criticality of the defect is determined by verification. Can do. On the other hand, if the defect coordinate data on the wafer is used, it can be determined whether the cause of the defect is a process or a mask.

  In this manner, since the defect and quality control of the mask can be performed, the reliability of manufacturing the semiconductor device can be improved. In addition, since it is possible to manage the relationship with the exposure process margin and the size, the quality of the exposure process can be controlled, and the mask quality and the exposure process can be optimized. As a result, the semiconductor yield and productivity can be improved. Can contribute to the improvement.

DESCRIPTION OF SYMBOLS 100 Inspection apparatus 101 Sample cassette 102 Conveyance part 103 Sample exchange chamber 104 Sample 105 to be inspected Sample holder 106 Sample chamber 107 Electron source 108 Extraction electrode 109 Lens 110 Diaphragm 111 Reflection plate 112 Deflector 113 Objective lens 114 Electrode on sample 115 X stage 116 Y stage 117 Height sensor 118 Detector 119 Signal control unit 120 Stage control unit 121 Optical system control unit 122 Storage unit 123 Control unit 124 Operation unit 125 External database, medium 126 Transport unit side opening 127 Sample chamber side opening 200 Mask Origin 201 Mask X coordinate 202 Mask Y coordinate 203 Shot 204 Shot origin 205 Shot X coordinate 206 Shot Y coordinate 207 Die 208 Die origin 209 Die X coordinate 210 Die Y coordinate 300 Mask coordinates (flow)
301,311 Offset adjustment (flow)
302 Center origin → Corner origin (flow)
303 Scale conversion (1/4) (Flow)
304,308 Mirror conversion (flow)
305 Shot coordinate system → Die coordinate system conversion (flow)
306 Die coordinate system (flow)
307 Die coordinate system → Shot coordinate system (flow)
309 Magnification conversion (4 times) (Flow)
310 Corner origin → Center origin (flow)
400 to 415 Each operation of inspection flow 500 Electron beam image 501 on mask of point 1 Pattern 501 on mask 502 Substrate 503 on mask 504 Defect found on mask 504 Electron beam image on wafer of point 2 505 Pattern on wafer 506 Film on upper and lower layers of wafer 507 Defect found on wafer

Claims (14)

A pattern inspection apparatus comprising means for irradiating an electron beam onto a substrate surface on which a pattern is formed, means for detecting a signal generated from the substrate, and means for imaging a signal detected by the detection means,
Has a plurality of sample load ports and a plurality of sample exchange chambers, and has a plurality of holders for placing samples of different shapes in the sample exchange chambers, and samples having different shapes are placed on the same stage by the sample holders. A pattern inspection apparatus comprising means for mounting. The pattern inspection apparatus according to claim 1,
One of the samples is a mask (first sample) of a semiconductor device, and the other is a semiconductor wafer (second sample). The pattern inspection apparatus according to claim 1,
One of the samples is a template, and the other is a substrate or a film on which a pattern transferred by the template is formed. The pattern inspection apparatus according to any one of claims 1 to 3,
Based on the coordinate data of the result of inspecting the sample to be inspected by another apparatus, means for converting each of the coordinate data according to a plurality of sample shapes,
Means for performing alignment based on the converted result;
A pattern inspection apparatus comprising means for acquiring an image by moving to the coordinates after alignment. The pattern inspection apparatus according to any one of claims 1 to 3,
As an inspection means, means for observing the part of the sample based on coordinates detected by another device,
A pattern inspection apparatus comprising either one of means for observing the location based on coordinates registered in advance or means for measuring the dimension of the pattern based on coordinates registered in advance. The pattern inspection apparatus according to any one of claims 2 and 5,
One of the plurality of sample holders is a first sample sample holder, and one is a second sample sample holder,
Means for comparing the result of measuring the spot size of the first sample with the result of measuring the spot size of the second sample, means for obtaining the transfer magnification from the comparison result, and the result of measuring the transfer magnification of each part And a pattern inspection apparatus. In the pattern inspection apparatus according to any one of claims 2 and 3,
Means for comparing the result of inspecting the first sample with the result of inspecting the second sample;
Data processing means for classifying defects based on the result of the matching,
A pattern inspection apparatus comprising means for outputting the classified result. A step of transporting the first sample to the sample chamber, a step of loading coordinate data for inspecting the sample to be inspected, a step of converting the coordinate data according to the sample shape type, and a step of aligning according to the converted coordinates A step of moving the first sample based on the converted coordinate data, a step of acquiring an electron beam image, a step of transporting the second sample to the sample chamber, and the coordinate data as a second sample type A pattern inspection method including a step of converting in accordance with the coordinate, a step of aligning in accordance with the converted coordinates, a step of moving the second sample based on the converted coordinate data, and a step of acquiring an electron beam image. And
Collating the result of inspecting the first sample with the result of inspecting the second sample;
Categorizing defects based on the matching results;
A pattern inspection method comprising a step of outputting inspection result data to which classified results are added. The inspection method according to claim 8,
A pattern inspection method comprising a step of converting predetermined inspection object coordinates in a first sample according to a second sample shape. The inspection method according to claim 8,
In the step of classifying defects based on the collated result, the step of adding the classified result to inspection result data, and the step of outputting the inspection result data, the apparatus or medium for which the first inspection target coordinate data is obtained A pattern inspection method comprising a step of making a change. The pattern inspection apparatus according to claim 1,
The pattern inspection apparatus, wherein the lower surfaces of the first sample holder and the second sample holder have the same structure. The pattern inspection apparatus according to claim 1,
The sample surface height when the first sample is placed on the first sample holder and placed on the sample stage in the sample chamber, and the sample stage in the sample chamber when the second sample is placed on the second sample holder. A pattern inspection apparatus characterized by having a structure in which the height of the sample surface when placed on the substrate is substantially equal.   A mask that has been inspected by the inspection apparatus according to claim 1 and whose quality is controlled, and a semiconductor device transferred by the mask.   A template which has been inspected by the inspection apparatus according to claim 1 and whose quality is controlled, and a substrate or a film transferred by the template.

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