JP2012238770A - Electrostatic lens array, drawing device, and device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electrostatic lens array advantageous to realize both of accuracy for refracting plural load particle beams and a small size.SOLUTION: In the electrostatic lens array, a first electrode plate and a second electrode plate comprise plural opening subset regions including three or more openings for passing load particle beams aligned with each other. An insulation spacer includes plural through holes corresponding to the plural opening subset regions of the first and second electrode plates respectively, and each having an outer shape larger than that of the corresponding opening subset region. The insulation spacer contacts the first electrode plate in a region between the plural opening subset regions of the first electrode plate, contacts the second electrode plate in a region between the plural opening subset regions of the second electrode plate, and are arranged between the first electrode plate and the second electrode plate, so that the plural through holes are aligned in the corresponding opening subset regions of the first and second electrode plates.

Description

  The present invention relates to an electrostatic lens array, a drawing apparatus, and a device manufacturing method.

  In recent years, in the manufacture of semiconductor devices, the line width has been miniaturized. For example, there are an immersion exposure apparatus, an EUV exposure apparatus, an imprint apparatus, etc. as an apparatus having a resolution (high resolution) with a line width of several tens of nm or less. It contains many challenges.

  On the other hand, as an apparatus having high resolution, a charged particle beam exposure apparatus (drawing apparatus) that draws a pattern simultaneously with a plurality of charged particle beams without using a mask (reticle) is also drawing attention. Many charged particle beam exposure apparatuses are put into practical use, such as eliminating the need for a mask, which is one of the manufacturing cost factors, and being able to control each charged particle beam in a programmable manner, making it suitable for manufacturing a variety of low-volume devices. With the advantages of

  The charged particle beam exposure apparatus includes a charged particle lens (electronic lens) for controlling the beam diameter and aberration of each charged particle beam. The charged particle lens includes an electromagnetic lens and an electrostatic lens. The electrostatic lens does not need to be provided with a coil core or the like as compared with the electromagnetic lens, and is easy to configure, which is advantageous for downsizing and high integration (see Non-Patent Document 1). The miniaturization and high integration of the electrostatic lens realizes an increase in the number and density of charged particle beams, leading to higher throughput and higher resolution of the charged particle beam exposure apparatus.

Chang et al. , J .; Vac. Sci. Technol. B14 (6), 1996

  In Non-Patent Document 1, a plurality of such units are arranged (arrayed) using an electrostatic lens in which a silicon electrode plate and an insulating spacer are anodically bonded as one unit. However, in such an arrangement, wiring and support of each electrostatic lens is required, so that the size of the entire lens increases and the number of charged particle beams cannot be increased. Further, the influence of deformation due to charging of the insulating spacer and electrostatic force between the electrode plates is not taken into consideration.

  The present invention has been made in view of the above-described problems of the prior art, and an exemplary object thereof is to provide an electrostatic lens array that is advantageous for achieving both accuracy and small size for refracting a plurality of charged particle beams. .

  In order to achieve the above object, an electrostatic lens array according to one aspect of the present invention is an electrostatic lens array including a first electrode plate, a second electrode plate, and an insulating spacer, wherein Each of the electrode plate and the second electrode plate includes a plurality of aperture subset regions each including three or more apertures through which a charged particle beam passes and the apertures are aligned with each other, and the insulating spacer includes the insulating spacer, A plurality of through holes each corresponding to the plurality of opening subset regions in the first electrode plate and the second electrode plate and having an outer shape larger than the outer shape of the corresponding opening subset region; The plurality of opening subset regions in the second electrode plate in contact with the first electrode plate in a region between the plurality of opening subset regions in the first electrode plate The first electrode so as to be in contact with the second electrode plate in a region between them, and each of the plurality of through holes being aligned with a corresponding opening subset region in the first electrode plate and the second electrode plate. It is arrange | positioned between the board and the said 2nd electrode board, It is characterized by the above-mentioned.

  Further objects and other aspects of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.

  According to the present invention, for example, it is possible to provide an electrostatic lens array that is advantageous for achieving both accuracy and small size for refracting a plurality of charged particle beams.

It is the schematic which shows the structure of the charged particle lens as one side of this invention. It is a figure for demonstrating the opening subset area | region in a 1st electrode plate and a 2nd electrode plate. It is a figure which shows the numerical example of the conditional expression which a charged particle lens should satisfy | fill. It is a figure for demonstrating the specific numerical example of a charged particle lens. It is a figure which shows the specific example of arrangement | positioning of the opening in an opening subset area | region. It is a figure for demonstrating the specific numerical example of a charged particle lens. It is a figure which shows the structure of the charged particle beam exposure apparatus as one side surface of this invention. It is a figure for demonstrating exposure of the board | substrate by a charged particle beam exposure apparatus. It is a figure for demonstrating exposure of the board | substrate by a charged particle beam exposure apparatus.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the accompanying drawings. In addition, in each figure, the same reference number is attached | subjected about the same member and the overlapping description is abbreviate | omitted.

  FIG. 1A and FIG. 1B are schematic views showing the configuration of a charged particle lens (electrostatic lens array) 1 as one aspect of the present invention, and FIG. FIG. 1B is an enlarged view of the first electrode plate 100 (second electrode plate 200). The charged particle lens 1 is, for example, an electrostatic lens used in a charged particle beam exposure apparatus (drawing apparatus) that draws a pattern on a substrate with a plurality of charged particle beams.

  In general, an electrostatic lens used in a charged particle beam exposure apparatus is required to improve resolution, throughput, and overlay accuracy, which are the three major performances of the exposure apparatus. For example, in order to increase the resolving power, it is necessary to increase the lens strength, that is, reduce the thickness of the electrode plates, increase the distance (interval) between the electrode plates, and increase the potential difference applied to the electrode plates. However, these cause deterioration of aberration due to deformation due to electrostatic force between the electrode plates and deviation of deflection of the charged particle beam due to charging of the insulating spacer. Japanese Patent Laid-Open Nos. 2001-283756 and 2004-55166 have proposed lens configurations that can solve some of these problems. Specifically, in Japanese Patent Application Laid-Open No. 2001-283756, deformation due to electrostatic force between the electrode plates is reduced by arranging an insulating spacer in the vicinity of the opening of the electrode plates. However, the influence of charging of the insulating spacer arranged near the opening of the electrode plate is not considered. In Japanese Patent Application Laid-Open No. 2004-55166, the influence of charging of the insulating support member is reduced by arranging a metal shield between the insulating support member and the opening of the electrode plate. However, the deformation due to the electrostatic force between the electrode plates is not considered. In addition, by arranging the shield metal, the size of the lens increases and the number of charged particle beams cannot be increased.

  As described above, it is very difficult to improve the resolution, throughput, and overlay accuracy in the conventional technology. Therefore, the charged particle lens 1 according to the present embodiment has the following configuration in order to improve resolution, throughput, and overlay accuracy.

  In this embodiment, the charged particle lens 1 includes two electrode plates and one insulating spacer, that is, a first electrode plate 100, a second electrode plate 200, and an insulating spacer 300. However, the charged particle lens 1 is not limited to the configuration shown in FIG. For example, the charged particle lens 1 may be an Einzel lens that includes three electrode plates and two insulating spacers, equipotential electrodes at both ends, and applies a high voltage to an intermediate electrode.

  The first electrode plate 100 and the second electrode plate 200 are flat plates having the normal direction in the optical axis direction. Each of the first electrode plate 100 and the second electrode plate 200 has a plurality of openings (through holes penetrating the electrodes) OP through which the charged particle beam passes. In each of the first electrode plate 100 and the second electrode plate 200, the plurality of openings OP are formed in a two-dimensional shape, and each of the openings OP includes three or more openings OP, and the openings OP are aligned with each other. Of the aperture subset region SBR. The plurality of opening subset regions SBR are defined by a convex hull about the center point of the opening OP included therein, and are arranged so as not to overlap each other. Here, the convex hull means the smallest polygon including an internal point.

  The insulating spacer 300 is a flat plate having the optical axis direction as a normal line, like the first electrode plate 100 and the second electrode plate 200, and is sandwiched between the first electrode plate 100 and the second electrode plate 200. Arranged. The insulating spacer 300 includes a plurality of through holes TH corresponding to the opening subset region SBR in the first electrode plate 100 and the second electrode plate 200. Each of the plurality of through holes TH has an outer shape larger than the outer shape of the opening subset region SBR in the first electrode plate 100 and the second electrode plate 200 located on both sides along the optical axis direction. The insulating spacer 300 surrounds each of the plurality of opening subset regions SBR in the first electrode plate 100 and the second electrode plate 200 with each of the plurality of through holes TH. The insulating spacer 300 is in contact with the first electrode plate 100 in a region IVR between the plurality of opening subset regions SBR in the first electrode plate 100, and between the plurality of opening subset regions SBR in the second electrode plate 200. It contacts the second electrode plate 200 in the region IVR. In other words, each of the plurality of through holes TH is aligned with the corresponding opening subset region SBR in the first electrode plate 100 and the second electrode plate 200. Accordingly, the charged particle beam passes through the opening included in the opening subset region SBR of the first electrode plate 100, the through hole TH of the insulating spacer 300, and the opening included in the opening subset region SBR of the second electrode plate 200. Become.

  Here, with reference to FIG. 2, the opening subset area | region SBR in the 1st electrode plate 100 and the 2nd electrode plate 200 is demonstrated in detail. In FIG. 2, the xy plane is a plane parallel to the first electrode plate 100, the second electrode plate 200, and the insulating spacer 300. L represents the maximum value of the opposite point length of the outer shape of the through hole TH of the insulating spacer 300. Antipodal points mean two points where there are parallel tangents through each point. Therefore, L means the maximum value of the distance between the tangent lines in contact with the outer shape of the through hole TH of the insulating spacer 300. In addition, D is the maximum value of the opposite store length of the outer shape of each of the opening subset regions SBR of the first electrode plate 100 and the second electrode plate 200, that is, the maximum value of the distance between tangents that touch the outer shape of the opening subset region SBR. Represents. l represents the minimum value of the distance between the outer shape of the through hole TH of the insulating spacer 300 and the outer shape of the opening subset region SBR.

  By setting l to a finite value, deflection deviation of the charged particle beam due to charging of the insulating spacer 300 can be reduced. Moreover, the deformation | transformation by the electrostatic force between the 1st electrode plate 100 and the 2nd electrode plate 200 can be reduced by making L into a finite value. Furthermore, in order to arrange the openings OP in the opening subset region SBR with high density (that is, to increase the number of openings OP), it is only necessary to increase D with respect to L. However, in the present embodiment, the arrangement of the openings OP in the opening subset region SBR is not particularly limited.

  Although the above-described conditions for l, D, and L are contradictory, in the present embodiment, the openings OP in the opening subset region SBR are arranged with high density by maximizing D under the conditions for l and L. . Moreover, the number of charged particle beams is ensured by forming the plurality of aperture subset regions SBR at a finite distance in the same plane. Thereby, the charged particle lens 1 implement | achieves improving three major performances (resolution, a throughput, and overlay precision) of a charged particle beam exposure apparatus.

  In addition, in order to arrange more opening subset areas SBR in the first electrode plate 100 and the second electrode plate 200, the outer shape of the opening subset area SBR is preferably a parallelogram. Furthermore, in order to arrange more openings OP in the opening subset region SBR, the outer shape of the opening subset region SBR may be a regular hexagon.

  The conditions for the maximum value L of the distance between the tangents that contact the outline of the through hole TH of the insulating spacer 300 and the maximum value D of the distance between the tangents that contact the outline of the opening subset region SBR will be described. Such a condition is necessary to reduce deformation due to electrostatic force between the first electrode plate 100 and the second electrode plate 200.

  When the deformation of the electrode plate in the opening subset region SBR is approximated to the disk deformation, the deformation distribution in the opening subset region SBR is statically expressed by the following Expression 1.

  In Equation 1, ε represents the dielectric constant of vacuum, E represents the Young's modulus of the first electrode plate 100 and the second electrode plate 200, and ν represents the Poisson's ratio of the first electrode plate 100 and the second electrode plate 200. , T represents the thicknesses of the first electrode plate 100 and the second electrode plate 200. G represents the distance between the first electrode plate 100 and the second electrode plate 200; Δφ represents the potential difference between the potential applied to the first electrode plate 100 and the potential applied to the second electrode plate 200; w represents the permissible accuracy of the gap g between the first electrode plate 100 and the second electrode plate 200. In this case, the ratio D / L between L and D needs to satisfy the following formula 2.

Referring to Equation 2, the ratio D / L between D and L becomes maximum when L = L ₀ . Further, in order to realize a resolving power of several tens of nm or less, it is necessary to set g and t to several hundreds μm or less, Δφ to several kV or more, and w to several hundreds nm or less because of optical performance requirements. Therefore, as L ₀ is reduced to increase the resolution, L and D also tends to be constrained.

  A condition for the minimum value l of the distance between the outer shape of the through hole TH of the insulating spacer 300 and the outer shape of the opening subset region SBR will be described. Such a condition is necessary to reduce the deflection deviation of the charged particle beam and the deterioration of the accuracy of the inter-axis distance of the charged particle beam due to the charging of the insulating spacer 300.

  Regarding the charging characteristics of insulating spacers when a high voltage is applied to a gap of about several millimeters, see, for example, “Charging / insulating characteristics of quartz glass” (Yamamoto, Nagata, Fukuda, Harazawa, House), Electrical Engineering A 123, No. 5, 2003 ”. By performing electrostatic field analysis and charged particle beam trajectory analysis using the charge distribution as a boundary condition based on the charging characteristics of the insulating spacer, the distance between the axes of the charged particle beam can be reduced according to the distance from the insulating spacer 300. It is possible to numerically calculate how much it deviates. As a result, the minimum value l of the distance between the outer shape of the through hole TH of the insulating spacer 300 and the outer shape of the opening subset region SBR is expressed by the following equation with respect to the allowable value s of the inter-axis distance accuracy of the charged particle beam. It turns out that 3 needs to be satisfied.

In Equation 3, φ _acc represents the absolute value of the acceleration voltage of the charged particle beam, and the numerical value is in the MKSA unit system.

  On the other hand, as described above, in consideration of increasing the maximum value D of the distance between the tangent lines in contact with the outer shape of the aperture subset region SBR, L and D need to satisfy the following Expression 4. Therefore, the difference between L and D needs to satisfy the following Expression 5.

Here, numerical examples of conditions (conditional expressions) relating to the ratio D / L between L and D and the difference between L and D (LD) are shown in FIG. In FIG. 3, L is adopted on the horizontal axis and D is adopted on the vertical axis. Further, as feasible conditions, t was 150 μm, g was 300 μm, Δφ was 3.7 kV, φ _acc was 5 kV, w = 300 nm, and s was 0.2 mm. The physical property values of the first electrode plate 100 and the second electrode plate 200 are the physical property values of silicon (Si) single crystal.

  Referring to FIG. 3, an area indicated by hatching (shaded area) is an effective area that simultaneously satisfies the above-described conditions. It can be seen that in order to increase D, there is a range suitable for L, and D and L need values of at least several mm. On the other hand, the diameter of the opening OP in the opening subset region SBR is preferably at least several hundred μm or less from the viewpoint of the density of the charged particle beam. Therefore, there should be a difference of at least 10 times between D and L and the diameter of the opening OP.

  Moreover, the charged particle lens 1 of this embodiment has a beneficial effect also in manufacture. In the charged particle lens 1 of the present embodiment, at the same position with respect to the charged particle beam, the first electrode plate 100, the second electrode plate 200, and the insulating spacer 300 are each made of the same flat member, and the charged particle lens The number of members constituting 1 is minimized. Thereby, each member (the 1st electrode plate 100, the 2nd electrode plate 200, the insulating spacer 300, etc.) which constitutes charged particle lens 1 can be processed easily and with high precision. In addition, the alignment (assembly) accuracy of each member constituting the charged particle lens 1 can be improved.

  Furthermore, the opening OP in the first electrode plate 100 and the second electrode plate 200 and the through hole TH in the insulating spacer 300 can be formed for each flat plate. The processing accuracy of each member can be managed for each flat plate, and the yield of devices can be improved.

  In addition, since the thickness of the first electrode plate 100 and the second electrode plate 200 can be reduced, the accuracy and roundness of the diameter of the opening OP can be improved, and the aberration with respect to the charged particle beam is reduced. be able to.

  Here, a specific numerical example of the charged particle lens 1 will be described. FIG. 4A is a view showing the first electrode plate 100 and the insulating spacer 300 constituting the charged particle lens 1. Since the second electrode plate 200 is the same as the first electrode plate 100, the illustration is omitted. FIG. 4B is a diagram showing a positional relationship between the first electrode plate 100 and the insulating spacer 300 when the insulating spacer 300 is disposed between the first electrode plate 100 and the second electrode plate 200. It is.

  As shown in FIG. 4A, the first electrode plate 100 and the second electrode plate 200 are made of a silicon wafer having an outer diameter of 100 nm and a thickness of 0.15 mm. However, the first electrode plate 100 and the second electrode plate 200 are not limited to silicon wafers, and may be configured by SOI wafers. Each of the first electrode plate 100 and the second electrode plate 200 is provided with 19 open subset regions SBR having a regular hexagonal outer shape. The opening OP in the opening subset region SBR is formed by wet etching, dry etching, laser processing, or a combination thereof.

  As shown in FIG. 4A, the insulating spacer 300 is made of borosilicate glass having an outer diameter of 100 nm and a thickness of 0.3 mm. However, the insulating spacer 300 is not limited to borosilicate glass, and may be made of alkali-free glass or insulating ceramic. Further, 19 through holes TH having a circular outer shape are formed in the insulating spacer 300 in accordance with the number of the opening subset regions SBR. The through hole TH is formed by machining or laser processing.

  The insulating spacer 300 is fixed between the first electrode plate 100 and the second electrode plate 200 by anodic bonding, surface activation bonding, eutectic bonding, silicon fusion bonding, brazing, epoxy bonding, or the like. . As shown in FIG. 4B, the maximum value L of the distance between the tangent lines in contact with the outline of the through hole TH is 12.42 mm, and the maximum value D of the distance between the tangent lines in contact with the outline of the opening subset region SBR is 8 .68 mm. The minimum value l of the distance between the outer shape of the through hole TH of the insulating spacer 300 and the outer shape of the opening subset region SBR is 1.87 mm. In addition, the distance (minimum width of the insulating spacer 300) d between the through hole TH and the through hole TH is 0.6 mm, and the pitch p of the opening subset region SBR is 13.02 mm.

  FIG. 5 is a diagram illustrating a specific arrangement example of the openings OP in the opening subset region SBR. As shown in FIG. 5, the maximum value L of the distance between tangents that touch the outline of the aperture subset region SBR is 8.68 mm, and the aperture OP is located at the apex of an equilateral triangle having a side length of 43.2 μm. Are arranged to be. In this case, about 30,000 openings OP can be formed in one opening subset region SBR. Further, since the number of the aperture subset regions SBR is 19, approximately 570,000 apertures can be formed in each of the first electrode plate 100 and the second electrode plate 200 (in contrast to the charged particle lens 1). About 570,000 charged particle beams can be used).

  FIG. 6A and FIG. 6B are diagrams for explaining another specific numerical example of the charged particle lens 1. FIG. 6A is a view showing the first electrode plate 100 and the insulating spacer 300 constituting the charged particle lens 1. Since the second electrode plate 200 is the same as the first electrode plate 100, the illustration is omitted. FIG. 6B is a diagram showing a positional relationship between the first electrode plate 100 and the insulating spacer 300 when the insulating spacer 300 is disposed between the first electrode plate 100 and the second electrode plate 200. It is.

  As shown in FIG. 6A, the first electrode plate 100 and the second electrode plate 200 are made of a silicon wafer having an outer diameter of 100 nm and a thickness of 0.10 mm. Each of the first electrode plate 100 and the second electrode plate 200 is provided with 48 open subset regions SBR having a rectangular outer shape.

  As shown in FIG. 6A, the insulating spacer 300 is made of borosilicate glass having an outer diameter of 100 nm and a thickness of 0.4 mm. The insulating spacer 300 is formed with 48 through holes TH having a rectangular outer shape in accordance with the number of the opening subset regions SBR.

  As shown in FIG. 6B, the maximum value L of the distance between the tangent lines in contact with the outline of the through hole TH is 11.3 mm, and the maximum value D of the distance between the tangent lines in contact with the outline of the opening subset region SBR is 6. .2 mm. Further, the minimum value l of the distance between the outer shape of the through hole TH of the insulating spacer 300 and the outer shape of the opening subset region SBR is 1.8 mm. In addition, the distance (minimum width of the insulating spacer 300) d between the through hole TH and the through hole TH is 0.7 mm, and the pitch p of the opening subset region SBR is 8.7 mm.

  A charged particle beam exposure apparatus 600 to which the charged particle lens 1 is applied will be described with reference to FIG. FIG. 7 is a view showing a configuration of a charged particle beam exposure apparatus 600 of the present invention.

  The charged particle beam exposure apparatus 600 is a drawing apparatus that draws a pattern on a substrate using a charged particle beam. The charged particle beam exposure apparatus 600 includes an electron gun 601, a condenser lens 602, a correction optical system 603, a reduction optical system 604, a deflector 606, a dynamic focus coil 607, a dynamic stig coil 608, and a substrate stage 609. And have.

  The electron gun 601 includes a cathode 601a, a grid 601b, and an anode 601c. The electron gun 601 forms a crossover image of the charged particle beam from the cathode 601a between the grid 601b and the anode 601c.

  The condenser lens 602 makes the charged particle beam from the electron gun 601 substantially parallel to be incident on the correction optical system 603. The correction optical system 603 includes an aperture array, a blanker array, a charged particle lens, a stopper array, and the like, and forms a plurality of intermediate images. The reduction optical system 604 reduces and projects each of the plurality of intermediate images formed by the correction optical system 603 on the substrate 605 (that is, forms a light source image on the substrate 605).

  The deflector 606 deflects the charged particle beam from the correction optical system 603 to displace a plurality of optical images on the substrate 605 by substantially the same amount of displacement in the x-axis direction and the y-axis direction. In other words, the deflector 606 deflects the charged particle beam guided onto the substrate 605 so as to move on the substrate 605.

  The dynamic focus coil 607 corrects the focus position shift of the light source image due to deflection aberration generated when the charged particle beam is deflected by the deflector 606. Similar to the dynamic focus coil 607, the dynamic stig coil 608 corrects astigmatism of deflection aberration caused by the deflection of the charged particle beam.

  The substrate stage 609 includes a θ-z stage that can move in the optical axis (z-axis) direction and a rotation direction around the x-axis, and an xy stage that can move in the x-axis direction and the y-axis direction orthogonal to the optical axis. The substrate 605 is held. The substrate stage 609 is provided with a Faraday cup that detects the amount of charge of the light source image formed by the charged particle beam from the correction optical system 603.

  In the charged particle beam exposure apparatus 600, a charged particle optical system that emits a charged particle beam such as the correction optical system 603 and the reduction optical system 604 includes the charged particle lens 1 described above. Therefore, in the charged particle beam exposure apparatus 600, as shown in FIG. 8, the substrate 605 is exposed using a charged particle beam that has passed through each opening OP in each opening subset region SBR (that is, a pattern is drawn). The charged particle beam that exposes the substrate 605 is deflected by the deflector 606 as long as adjacent charged particle beams do not interfere with each other. At that time, the substrate stage 609 moves in a direction (scanning direction) orthogonal to the deflection direction of the charged particle beam (that is, scans the substrate 605). Thereby, the entire surface of the substrate 605 is exposed.

  If the substrate 605 is larger (for example, a diameter of 300 mm) than a single exposure region (for example, a diameter of 100 mm), the substrate stage 609 is moved as shown in FIG. What is necessary is just to change the position of. Specifically, each time the substrate 605 is exposed, a distance approximately equal to the outer diameter of the aperture subset region SBR is moved (substep), and a distance approximately equal to the size of the charged particle lens 1 is moved ( Repeat the main step. Thereby, the entire surface of the substrate 605 is exposed. Note that the exposure order shown in FIG. 9 is an example, and can be arbitrarily selected according to the exposure heat received by the substrate stage 609.

  Thus, since the charged particle beam exposure apparatus 600 includes the charged particle lens 1 in the charged particle optical system, as described above, it is possible to achieve excellent resolution, throughput, and overlay accuracy. Therefore, the charged particle beam exposure apparatus 600 can provide a high-quality device (semiconductor integrated circuit element, liquid crystal display element, etc.) with high throughput and high economic efficiency. Here, the device draws a pattern on a substrate (wafer, glass plate, etc.) coated with a photoresist (photosensitive agent) using the charged particle beam exposure apparatus 600, and develops the substrate on which the pattern is drawn. It is manufactured through a process and other known processes.

  As mentioned above, although preferable embodiment of this invention was described, it cannot be overemphasized that this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

Claims (8)

An electrostatic lens array comprising a first electrode plate, a second electrode plate, and an insulating spacer,
Each of the first electrode plate and the second electrode plate includes a plurality of aperture subset regions each including three or more apertures through which a charged particle beam passes and in which the apertures are aligned with each other;
The insulating spacer includes a plurality of through holes respectively corresponding to the plurality of opening subset regions in the first electrode plate and the second electrode plate and having outer shapes larger than the corresponding opening subset regions. ,
The insulating spacer is in contact with the first electrode plate in a region between the plurality of opening subset regions in the first electrode plate, and in the region between the plurality of opening subset regions in the second electrode plate. The first electrode plate and the second electrode plate are in contact with the second electrode plate, and the plurality of through holes are aligned with corresponding opening subset regions of the first electrode plate and the second electrode plate. An electrostatic lens array disposed between an electrode plate and the electrode plate.   The electrostatic lens array according to claim 1, wherein each of the plurality of aperture subset regions has a parallelogram shape. The dielectric constant of vacuum is ε, the Young's modulus of the first electrode plate and the second electrode plate is E, the Poisson's ratio of the first electrode plate and the second electrode plate is ν, the first electrode plate and the second electrode plate The thickness of the electrode plate is t, the distance between the first electrode plate and the second electrode plate is g, and the potential difference between the potential applied to the first electrode and the potential applied to the second electrode is Δφ, L is the maximum value of the distance between tangents in contact with the outline of the through hole, D is the maximum value of the distance between tangents in contact with the outline of the aperture subset region, and the first electrode plate and the second electrode plate If the allowable accuracy of the interval is w,
The electrostatic lens array according to claim 1, wherein the electrostatic lens array is configured to satisfy the following. The gap between the first electrode plate and the second electrode plate is g, the potential difference between the potential applied to the first electrode plate and the potential applied to the second electrode plate is Δφ, and the charged particle beam _Is the absolute value of the acceleration voltage of φ _acc , the allowable value of the inter-axis distance accuracy of the charged particle beam is s, and the minimum value of the distance between the outline of the through hole and the outline of the aperture subset region is l,
4. The electrostatic lens array according to claim 1, wherein the electrostatic lens array is configured to satisfy the following.   5. The electrostatic lens array according to claim 1, wherein the first electrode plate and the second electrode plate are formed of a silicon wafer or an SOI wafer. 6.   The electrostatic lens array according to claim 1, wherein the insulating spacer is made of any one of borosilicate glass, alkali-free glass, and insulating ceramic. A drawing apparatus for drawing on a substrate with a plurality of charged particle beams,
A charged particle optical system for emitting the plurality of charged particle beams;
The drawing apparatus, wherein the charged particle optical system includes the electrostatic lens array according to any one of claims 1 to 6. Drawing on a substrate using the drawing apparatus according to claim 7;
Developing the substrate on which the drawing has been performed in the step;
A device manufacturing method characterized by comprising: