JP2012238445A - Donor substrate for transfer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-performance device by preventing deterioration of a transfer material.SOLUTION: A donor substrate for transfer including a substrate, a photothermal conversion layer formed on the substrate, and a transfer layer formed on the photothermal conversion layer is characterized in that: that surface of the photothermal conversion layer which is in contact with the transfer layer is inactivated; and the transfer layer contains a specific anthracene derivative or a specific anthracene precursor compound.

Description

    The present invention relates to a transfer donor substrate used for patterning a device including an organic EL element.

  An organic EL device is a light emitting device with an organic light emitting material sandwiched between a cathode and an anode, and emits energy generated by recombination of electrons injected from the cathode and holes injected from the anode in the organic layer. It is an element based on the principle of taking it out as energy.

  Currently, a method for producing an organic layer included in an organic device typified by an organic EL element is generally formed by a dry process such as vacuum deposition, and a shadow mask or the like is used for patterning a pixel. However, such a method has problems such as low material utilization efficiency and difficulty in manufacturing a large area device.

  On the other hand, wet processes such as a photolithographic method, an inkjet method, and a printing method capable of reducing the cost and increasing the area are also being studied. However, in devices with a multilayer structure of organic thin films such as organic EL elements, there is a concern that the underlayer may change in film quality when an upper layer is applied, and it is difficult to control film thickness uniformity, etc. There is a problem that the performance decreases.

  Accordingly, a method has been developed in which a material is first prepared on a donor substrate and then transferred to a device substrate. As a method for forming an organic thin film on a donor substrate, a method of directly forming a naphthacene derivative or rubrene derivative used as a host material in an organic EL element by a wet process is disclosed (for example, see Patent Document 1). In general, many organic materials used for organic EL materials, etc. are hardly soluble, and many of them cannot be directly formed. Therefore, it is applied to the donor substrate in the form of a soluble precursor, and then converted on the donor substrate. And a method of using it as a target organic EL material is disclosed (for example, see Patent Document 2).

JP 2009-49094 A International Publication No. 2010/16331 Pamphlet

  In the organic thin film manufacturing method using the donor substrate as described above, when an organic material with low stability is used as a transfer material, the organic material may be partially deteriorated through a process through the donor substrate. There is. For this reason, there is a concern that the deteriorated organic material is mixed into the device by transfer, and the device performance is deteriorated.

  An object of the present invention is to solve such problems, to prevent deterioration of a transfer material, and to provide a device with high performance.

  That is, the present invention is a donor substrate for transfer comprising a substrate, a photothermal conversion layer formed on the substrate, and a transfer layer formed on the photothermal conversion layer, the surface contacting the transfer layer of the photothermal conversion layer Is inactivated and contains an anthracene derivative represented by the following general formula (1) or an anthracene precursor compound represented by the following general formula (2) in the transfer layer. This is a donor substrate for transfer.

(In the general formulas (1) and (2), R ^{1 to} R ¹⁰ may be the same as or different from each other, and hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an alkenyl group, a cycloalkenyl group, an alkynyl group, Alkoxy group, alkylthio group, aryl ether group, aryl thioether group, aryl group, heteroaryl group, halogen, cyano group, carbonyl group, carboxyl group, oxycarbonyl group, carbamoyl group, amino group, silyl group, phosphine oxide group, and In the general formula (2), X is an atom or an atomic group selected from C═O, CH ₂ , O, or CHR ¹¹ R ¹¹ is selected from the condensed rings formed between adjacent substituents. Is a substituent selected from an alkyl group, an alkenyl group, an alkoxy group or an acyl group, May be formed.)

  According to the present invention, in devices including an organic EL element manufactured by a transfer method, the impurity concentration in an organic thin film when an anthracene derivative is used as a transfer layer material can be reduced, and a decrease in device performance is suppressed. be able to.

Sectional drawing which shows an example of the donor substrate by this invention Sectional drawing explaining an example of the photothermal conversion layer in this invention Sectional drawing which shows another example of the inactivation process surface in this invention Sectional drawing which shows another example of the division pattern in this invention Sectional drawing which shows an example of the donor substrate of this invention in case it has a liquid repellent treatment layer The perspective view which shows an example of the donor substrate of this invention in case it has a liquid repellent treatment layer Sectional drawing which shows another example of the donor substrate by this invention Sectional drawing which shows an example of the patterning method by this invention Sectional drawing which shows an example of the light emitting layer patterning method of the organic EL element by this invention The top view which shows an example of the light irradiation method in FIG. The perspective view which shows another example of the light irradiation method in this invention. The perspective view which shows another example of the light irradiation method in this invention. The perspective view which shows another example of the light irradiation method in this invention. The perspective view which shows another example of the light irradiation method in this invention. Sectional drawing which shows an example of the overlap light irradiation method in this invention Sectional drawing which shows another example of the patterning method of the batch transfer by this invention The top view which shows another example of the light irradiation method in this invention The top view which shows another example of the light irradiation method in this invention The top view which shows another example of the light irradiation method in this invention The perspective view which shows another example of the light irradiation method in this invention.

  The donor substrate of the present invention is characterized by having an anthracene derivative and / or an anthracene precursor as a transfer layer, and generating less impurities during the production of the substrate.

  This is because the surface of the photothermal conversion layer that is in contact with the transfer layer is subjected to an inactivation treatment. This inactivation treatment surface utilizes the point that it is stable against the heat generated from the photothermal conversion layer and the low reactivity with the organic material.

  FIG. 1 shows an example of the configuration of the donor substrate of the present invention. Referring to FIG. 1, donor substrate 30 includes a support 31, a photothermal conversion layer 33 having an inactivation treatment surface 36 subjected to an inactivation treatment, a partition pattern 34, and a transfer layer 37.

  The deactivation surface 36 in each drawing in this specification including FIG. 1 is obtained by modifying the surface of the photothermal conversion layer 33. In the figure, although it is described as a two-layer structure in form, the photothermal conversion layer 33 and the deactivation surface 36 are actually a continuous film and there is no clear boundary.

  The support 31 is not particularly limited as long as it has a low light absorption rate and can stably form the photothermal conversion layer and the transfer material thereon. It is also possible to use a resin film. Specific resin materials include polyester, polyethylene, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyacryl, polysulfone, polyethersulfone, polyphenylene sulfide, polyimide, polyamide, polybenzoxazole, polyepoxy, polypropylene, polyolefin, and aramid. Resin, silicone resin, etc. can be used.

  As a preferable support in terms of chemical / thermal stability, dimensional stability, mechanical strength, and transparency, a glass plate can be exemplified. It can be appropriately selected from soda lime glass, alkali-free glass, lead-containing glass, borosilicate glass, aluminosilicate glass, low expansion glass, quartz glass and the like. When the transfer process of the present invention is carried out in vacuum, a glass plate is a particularly preferred support because it is required that gas release from the support is small.

  Even if the photothermal conversion layer 33 is heated to a high temperature, it is necessary to keep the temperature rise (thermal expansion) of the support itself within an allowable range. Therefore, the heat capacity of the support is preferably sufficiently larger than that of the photothermal conversion layer. Therefore, the thickness of the support is preferably 10 times or more the thickness of the photothermal conversion layer. Although the allowable range of thermal expansion depends on the size of the transfer region and the required accuracy of patterning, for example, the allowable range of thermal expansion is not shown, but for example, the photothermal conversion layer rises from room temperature by 300 ° C. When it is desired to suppress the temperature to 3 ° C. or less, which is 100, the thickness of the support is preferably 100 times or more the thickness of the photothermal conversion layer, and the temperature rise of the support is 1/300 of 300 ° C. 1 When it is desired to suppress the temperature to below ℃, the thickness of the support is preferably 300 times or more the thickness of the photothermal conversion layer. By doing in this way, even if it enlarges, the amount of dimensional displacement by thermal expansion is small, and highly accurate patterning is attained.

  The photothermal conversion layer 33 is a layer formed on the support 31 and further has an inactivation treatment surface 36 obtained by inactivating the surface thereof. The material of the light-to-heat conversion layer is not particularly limited as long as it is a material and configuration that efficiently absorbs light and generates heat and is stable against the generated heat. However, it is desirable that the heat capacity be large in order to prevent a rapid temperature rise and prevent a local temperature drop due to thermal diffusion to the partition pattern.

This is because if the heat capacity is small, the transfer material cannot be transferred slowly because it is easy to heat and cool. The heat capacity is a product of volume and volume specific heat, and a material having a large volume specific heat is desirable. Specifically, the volume specific heat of the photothermal conversion layer 33 is preferably 2 J / cm ³ K or more. Further, a larger heat conductivity of the photothermal conversion layer 33 is more desirable because uniform heating is possible and local temperature decrease is reduced. Specifically, the thermal conductivity of the photothermal conversion layer 33 is preferably 50 W / mK or more. Here, the said heat conductivity and volume specific heat shall say the value as the photothermal conversion layer 33 and the inactivation process surface 36 whole. The overall value can be measured by a known method such as a laser flash method, a scanning laser AC heating method, a differential method, or a 3ω method.

  As such a material, a thin film in which carbon black, graphite, titanium black, an organic pigment, metal particles, or the like is dispersed in a resin can be used. Moreover, in this invention, since a photothermal conversion layer may be heated at about 300 degreeC, it is preferable that a photothermal conversion layer consists of an inorganic thin film which is excellent in heat resistance, and has high heat conductivity and volume specific heat. Therefore, it is particularly preferable to use a metal thin film in terms of light absorption and film formability. Specifically, as a metal material, tungsten, tantalum, molybdenum, titanium, chromium, gold, silver, copper, platinum, iron, zinc, aluminum, cobalt, nickel, magnesium, vanadium, zirconium, silicon, carbon, etc. Or a thin film of an alloy or a laminated thin film thereof can be used.

  Further, the shape of the light-to-heat conversion layer having the inactivated surface may not be smooth, and may be a spike shape as shown in FIG. 2 or a porous shape. By adopting such a shape, surface modification can be performed when the transfer material is formed by a coating method, and even when the transfer layer 37 is relatively thick, it can be heated uniformly.

  As a method for forming the photothermal conversion layer, known techniques such as vacuum deposition, EB deposition, sputtering, ion plating, and the like can be used. When patterning, a known method such as a laser ablation method can be used.

  Here, the inactivation means that the surface of the material forming the light-to-heat conversion layer is treated so that it does not easily react with an organic compound, water, air or the like. For example, it refers to oxidizing or nitriding the surface of the photothermal conversion layer.

  The surface deactivation treatment of the photothermal conversion layer is basically performed by exposing the surface of the photothermal conversion layer formed by sputtering or the like to an oxygen source or a nitrogen source, and a known method can be used. Specifically, examples of the oxide film include oxygen plasma treatment, thermal oxidation treatment, and surface oxidation by simple exposure to an oxygen atmosphere. Among these, oxygen plasma treatment, thermal oxidation treatment, and the like are preferable for reliably performing the oxidation treatment. Examples of the nitride film include nitrogen plasma treatment, gas nitridation method, and gas soft nitridation method. Nitrogen plasma method and gas soft nitridation method that require a short treatment time are suitable. Although the specific treatment time depends on the method used and the type of the photothermal conversion layer, the surface inactivation treatment is sufficiently performed in several tens of minutes to several hours in various plasma treatment methods.

  As described above, since the deactivation surface of the present invention is obtained by modifying the surface of the photothermal conversion layer, unlike the case where an inactive film is separately laminated on the photothermal conversion layer, the photothermal conversion layer and The boundary of the inactivation treatment surface does not exist clearly as in the laminated film, and therefore the deactivation treatment surface is unlikely to peel off.

  Anthracene derivatives and anthracene precursor compounds used in the present invention are relatively easily deteriorated, and many materials constituting the photothermal conversion layer react with other compounds and have a catalytic action. Therefore, directly producing a transfer layer containing an anthracene derivative or anthracene precursor compound on the photothermal conversion layer may cause deterioration of the anthracene derivative or anthracene precursor compound and increase in impurities, which may cause a decrease in device performance. There is. According to the present invention, the surface of the photothermal conversion layer is deactivated so that the photothermal conversion layer does not directly contact the transfer layer, thereby reducing the deterioration of the anthracene derivative and the anthracene precursor compound and increasing the impurities. Can be prevented. In addition, since the surface of the light-to-heat conversion layer is inactivated, damage to the transfer layer and the device substrate due to heat during transfer can be reduced.

  Since the inactivation treatment in the present invention treats the surface of the formed photothermal conversion layer, the degree of inactivation varies in the film thickness direction. For this reason, the clear thickness of the inactivated portion cannot be determined, but is preferably about several nm to several tens of nm.

  Whether or not the surface of the photothermal conversion layer is inactivated can be analyzed using X-ray photoelectron spectroscopy (ESCA). Further, by performing analysis in the depth direction, it is possible to know the approximate thickness that has been inactivated.

  Further, the partition pattern 34 may be provided on the inactivation treatment surface of the photothermal conversion layer. By providing the partition pattern, the transfer material patterned on the donor substrate can be prevented from being mixed during transfer. The material for forming the partition pattern is not particularly limited as long as it is a material / configuration that defines the boundary of the transfer material and is stable against the heat generated in the photothermal conversion layer 33. For inorganic substances, oxides / nitrides such as silicon oxide and silicon nitride, glass, ceramics and the like can be used. For organic substances, resins such as polyvinyl, polyimide, polybenzoxazole, polystyrene, acrylic, novolac, and silicone can be used. The well-known technique which manufactures the partition in a plasma television by the glass paste method can also be used. The thermal conductivity of the partition pattern is not particularly limited, but it is preferable that the thermal conductivity is small from the viewpoint of preventing heat from diffusing to the device substrate that is opposed to the partition pattern.

  Further, the partition pattern may be provided at a location on the light-to-heat conversion layer where the inactivation treatment is not performed. An example in the case of providing a partition pattern in the location which has not performed the inactivation process on a photothermal conversion layer is shown in FIG. Further, (a) shows a case where the surface of the photothermal conversion layer is inactivated after the partition pattern is formed. At this time, as shown in (b), the photothermal conversion layer is deactivated even if a portion of the photothermal conversion layer is not subjected to the deactivation treatment by patterning the deactivation treatment surface. If there is almost no deterioration of the transfer layer due to the wide area, it does not matter. However, it is preferable that the photothermal conversion layer in contact with the transfer layer is as small as possible. The patterning of the inactivated surface is a direct patterning method such as a laser ablation method or plasma patterning method, or the surface of the photothermal conversion layer is patterned with a photoresist, and then the opening is subjected to an inactivation treatment, and thereafter Known techniques such as a method of removing the photoresist can be used.

  The method for forming the partition pattern 34 is not particularly limited, and known techniques such as vacuum deposition, EB deposition, sputtering, ion plating, CVD, and laser ablation are used when an inorganic substance is used, and spin coating is used when an organic substance is used. Well-known techniques such as slit coating and dip coating can be used. The patterning method of the partition pattern is not particularly limited, and a known photolithography method can be used. The partition pattern may be patterned by an etching (or lift-off) method using a photoresist, or patterning is performed by directly exposing and developing the partition pattern using a material obtained by adding photosensitivity to the exemplified resin material. May be. Furthermore, a stamp method or an imprint method in which a mold is pressed against the partition pattern layer formed on the entire surface, an ink jet method or a nozzle jet method in which a resin material is directly formed by patterning, and various printing methods can be used.

  The shape of the partition pattern 34 is not limited to a lattice-like (matrix-like) structure. For example, as illustrated in FIG. 7 described later, three types of transfer layers 37R, 37G, and 37B are formed on the donor substrate 30. When the pattern is formed, the planar shape of the partition pattern 34 may be a stripe extending in the y direction.

  Further, as shown in FIG. 4, a partition pattern 34 having a width wider than that of the transfer layer 37 can be formed. This is because one color is transferred for each of the three colors R, G, and B. In this case, three donor substrates 30 each having three types of transfer layers 37R, 37G, and 37B are prepared, and the transfer process according to the present invention is performed three times by facing each device substrate. By repeating, the transfer layers 37R, 37G, and 37B can be patterned on one device substrate. This is an example of an effective shape in high-definition patterning that requires a smaller pitch or gap between the transfer layers 37R, 37G, and 37B.

  The thickness of the partition pattern is not particularly limited. For example, even if the partition pattern 34 has the same thickness as the transfer layer 37 or is thinner, if the gap between the donor substrate 30 and the device substrate 20 is maintained, the transfer material evaporated at the time of transfer is slightly spread and deposited. Therefore, the transfer can be performed without causing mixing between the transfer layers 37R, 37G, and 37B. It is preferable that the transfer material is not in direct contact with the transfer surface of the device substrate, and the gap between the transfer material of the donor substrate and the transfer surface of the device substrate is kept in the range of 1 to 100 μm, and further 2 to 20 μm. Since the partition pattern is preferably thicker than the transfer material, it is preferably 1 to 100 μm, more preferably 2 to 20 μm. By making the partition pattern with such a thickness face the device substrate, the gap between the transfer material of the donor substrate and the transfer surface of the device substrate can be easily maintained at a constant value, and the evaporated transfer material Can reduce the possibility of intrusion into other compartments.

  The sectional shape of the partition pattern is preferably a forward tapered shape in order to facilitate the evaporation transfer material to be uniformly deposited on the device substrate. Here, the “forward taper shape” refers to a shape in which the sectional width of the partition pattern on the light-to-heat conversion layer side is longer than the width on the upper surface side. As illustrated in FIG. 9 described later, when the device substrate 10 has a pattern such as the insulating layer 14, the width of the insulating layer 14 is preferably wider than the width of the partition pattern 34. Further, it is preferable to arrange the partition pattern 34 so that the width of the partition pattern 34 is within the width of the insulating layer 14 at the time of alignment. In this case, even if the partition pattern 34 is thin, the donor substrate 30 and the device substrate 10 can be held in a desired gap by increasing the thickness of the insulating layer 14. The typical width of the partition pattern is 5 to 50 μm and the pitch is 25 to 300 μm. However, the partition pattern may be designed to an optimum value depending on the application, and is not particularly limited.

  When using the coating method described later when placing the transfer material in the partition pattern, the upper surface of the partition pattern is used to prevent the solution from being mixed into other partitions or riding on the upper surface of the partition pattern. Liquid repellent treatment (surface energy control) can be applied. Examples of the liquid repellent treatment include a method in which a liquid repellent material such as a fluorine-based material is mixed with a resin material for forming a partition pattern, and a method in which a high concentration region of the liquid repellent material is selectively formed on the surface or upper surface .

  An example of the latter case is shown in FIG. (A) shows a case where the liquid repellent treatment layer 35 is designed wider than the partition pattern. Since the solvent after application stays in the partition pattern and is not applied on the partition pattern, the transfer material can be used effectively. (B) shows a case where the liquid repellent treatment layer 35 is designed to be narrower than the partition pattern. Since the transfer material wets and spreads also on the edge portion of the partition pattern, a large amount of transfer material is used. Since the uniformity can be increased, the film thickness uniformity after transfer can be improved. Either of these cases can be selected depending on the situation.

  In FIG. 6, the liquid repellent treatment layer 35 is indicated by hatching, and the liquid repellent treatment layer 35 is formed on a part of the upper surface of the pattern. However, the liquid repellent treatment layer 35 may be formed over the entire pattern upper surface. .

  If necessary, an antireflection layer can be formed on the support 31 side of the photothermal conversion layer 33. Further, an antireflection layer may be formed on the surface of the support 31 on the light incident side. These anti-reflection layers are preferably optical interference thin films that use the difference in refractive index, and simple or mixed thin films such as silicon, silicon oxide, silicon nitride, zinc oxide, magnesium oxide, and titanium oxide, and laminated thin films thereof are used. it can.

  The transfer layer 37 is an organic thin film layer containing an anthracene derivative represented by the following general formula (1) or an anthracene precursor compound represented by the general formula (2).

Here, in the general formulas (1) and (2), R ^{1 to} R ¹⁰ may be the same as or different from each other, and are hydrogen, alkyl group, cycloalkyl group, heterocyclic group, alkenyl group, cycloalkenyl group, alkynyl. Group, alkoxy group, alkylthio group, aryl ether group, aryl thioether group, aryl group, heteroaryl group, halogen, cyano group, carbonyl group, carboxyl group, oxycarbonyl group, carbamoyl group, amino group, silyl group, phosphine oxide group As well as a condensed ring formed between adjacent substituents. In General Formula (2), X is an atom or atomic group selected from C═O, CH ₂ , O, and CHR ¹¹ . R ¹¹ is a substituent selected from an alkyl group, an alkenyl group, an alkoxy group, and an acyl group, and may have a bond with each other to form a ring.

  Of these substituents, hydrogen may be deuterium. The alkyl group represents, for example, a saturated aliphatic hydrocarbon group such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, and a tert-butyl group. It may or may not have. There are no particular limitations on the additional substituent when it is substituted, and examples thereof include an alkyl group, an aryl group, and a heteroaryl group. This point is also common to the following description. The number of carbon atoms of the alkyl group is not particularly limited, but is usually in the range of 1 to 20 and more preferably 1 to 8 from the viewpoint of availability and cost.

  A cycloalkyl group shows saturated alicyclic hydrocarbon groups, such as a cyclopropyl group, a cyclohexyl group, a norbornyl group, and an adamantyl group, for example, and this may or may not have a substituent. Although carbon number of an alkyl group part is not specifically limited, Usually, it is the range of 3-20.

  The heterocyclic group refers to an aliphatic ring having atoms other than carbon, such as a pyran ring, a piperidine ring, and a cyclic amide, in the ring, which may or may not have a substituent. . Although carbon number of a heterocyclic group is not specifically limited, Usually, it is the range of 2-20.

  An alkenyl group shows the unsaturated aliphatic hydrocarbon group containing double bonds, such as a vinyl group, an allyl group, and a butadienyl group, and this may or may not have a substituent. Although carbon number of an alkenyl group is not specifically limited, Usually, it is the range of 2-20.

  The cycloalkenyl group refers to an unsaturated alicyclic hydrocarbon group containing a double bond such as a cyclopentenyl group, a cyclopentadienyl group, or a cyclohexenyl group, which may have a substituent. You don't have to. Although carbon number of a cycloalkenyl group is not specifically limited, Usually, it is the range of 2-20.

  An alkynyl group refers to, for example, an unsaturated aliphatic hydrocarbon group containing a triple bond such as an ethynyl group, and may or may not have a substituent. Although carbon number of an alkynyl group is not specifically limited, Usually, it is the range of 2-20.

  An alkoxy group refers to a functional group to which an aliphatic hydrocarbon group is bonded via an ether bond such as a methoxy group, an ethoxy group, and a propoxy group, and the aliphatic hydrocarbon group may have a substituent. It may not have. Although carbon number of an alkoxy group is not specifically limited, Usually, it is the range of 1-20.

  The alkylthio group is a group in which an oxygen atom of an ether bond of an alkoxy group is substituted with a sulfur atom. The hydrocarbon group of the alkylthio group may or may not have a substituent. Although carbon number of an alkylthio group is not specifically limited, Usually, it is the range of 1-20.

  An aryl ether group refers to a functional group to which an aromatic hydrocarbon group is bonded via an ether bond, such as a phenoxy group, and the aromatic hydrocarbon group may or may not have a substituent. . Although carbon number of an aryl ether group is not specifically limited, Usually, it is the range of 6-40.

  An aryl thioether group is one in which the oxygen atom of the ether bond of the aryl ether group is replaced with a sulfur atom. The aromatic hydrocarbon group in the aryl thioether group may or may not have a substituent. The number of carbon atoms of the arylthioether group is not particularly limited, but is usually in the range of 6 or more and 40 or less.

  The aryl group is, for example, an aromatic hydrocarbon group such as a phenyl group, a naphthyl group, a biphenyl group, a fluorenyl group, a phenanthryl group, a terphenyl group, an anthracenyl group, and a pyrenyl group, or a group in which a plurality of these are connected, It can be unsubstituted or substituted. Although carbon number of an aryl group is not specifically limited, Usually, it is the range of 6-40. Substituents that such aryl groups may have are alkyl groups, cycloalkyl groups, alkenyl groups, alkynyl groups, alkoxy groups, aryl ether groups, alkylthio groups, halogens, cyano groups, amino groups (amino groups are further An aryl group or a heteroaryl group, which may be substituted), a silyl group and a boryl group.

A heteroaryl group refers to an aromatic group having a non-carbon atom in the ring, such as a furanyl group, a thiophenyl group, an oxazolyl group, a pyridyl group, a quinolinyl group, or a carbazolyl group, which has a substituent. Even if it does not have. Although carbon number of heteroaryl group is not specifically limited, Usually, it is the range of 2-30. The substituent that such a heteroaryl group may have is the same as the substituent that the aryl group may have.
Halogen is fluorine, chlorine, bromine or iodine.

  A carbonyl group refers to a substituent containing a carbon-oxygen double bond such as an acyl group or a formyl group. An acyl group is a substituent in which hydrogen of a formyl group is substituted with an alkyl group, an aryl group, or a heteroaryl group. The oxycarbonyl group refers to a substituent containing an ether bond on the carbon of the carbonyl group, such as a t-butyloxycarbonyl group or a benzyloxycarbonyl group.

  The carbamoyl group refers to a substituent from which the hydroxyl group of carbamic acid is removed, and may or may not have a substituent. An amino group shows nitrogen compound groups, such as a dimethylamino group, for example, and this may be unsubstituted or substituted. The silyl group indicates, for example, a silicon compound group such as a trimethylsilyl group, which may be unsubstituted or substituted. Although carbon number of a silyl group is not specifically limited, Usually, it is the range of 3-20. Moreover, the number of silicon is 1-6 normally. The phosphine oxide group refers to a substituent containing a phosphorus-oxygen double bond, which may be unsubstituted or substituted.

When the condensed ring formed between adjacent substituents is explained in the general formula (1), any adjacent two substituents selected from R ^{1 to} R ¹⁰ are bonded to each other to be conjugated or non-provided. It forms a condensed ring of a role. Such naphthacene example R ³ and R ⁴ as an example of the condensed rings form a condensed ring of conjugated, polyacene such as pentacene R ³ and R ⁴ and R ⁸ and R ⁹ to form a fused ring conjugated Examples thereof also include ortho-condensed compounds such as benzo [a] anthracene and the like, wherein R ² and R ³ form a condensed ring. Further, these condensed rings may contain nitrogen, oxygen, sulfur atoms in the ring structure, or may be bonded to another ring. As can be seen from this description, in the present specification, when “anthracene derivative represented by general formula (1)” and “anthracene precursor compound represented by general formula (2)” are referred to, respectively, a naphthacene derivative, a pentacene derivative, etc. And polyacene precursor compounds such as naphthacene precursor compounds and pentacene precursor compounds.

  For example, the naphthacene derivative has a structure represented by the following general formula (3). Similarly, a naphthacene precursor compound is represented by the following general formula (4).

Here, in the general formulas (3) and (4), R ^{12 to} R ²³ may be the same as or different from each other, and are hydrogen, alkyl group, cycloalkyl group, heterocyclic group, alkenyl group, cycloalkenyl group, alkynyl. Group, alkoxy group, alkylthio group, aryl ether group, aryl thioether group, aryl group, heteroaryl group, halogen, cyano group, carbonyl group, carboxyl group, oxycarbonyl group, carbamoyl group, amino group, silyl group, phosphine oxide group As well as a condensed ring formed between adjacent substituents. In General Formula (4), Y is an atom or atomic group selected from C═O, CH ₂ , O, and CHR ²⁴ . R ²⁴ is a substituent selected from an alkyl group, an alkenyl group, an alkoxy group, and an acyl group, and may have a bond with each other to form a ring.

The explanation of these substituents is the same as the explanation of R ^{1 to} R ¹¹ above.

  In addition, the following are mentioned as an example of the anthracene derivative represented by General formula (1).

  Examples of the anthracene derivative represented by the general formula (1) are not limited to those described above. Patent No. 4308317 (particularly 0033 to 0057), International Publication WO2007 / 097178 pamphlet (particularly 0015 to 0024), Patent No. 3712760 (particularly) Anthracene derivatives other than the above listed in 0011 to 0039) can also be preferably used. Among such anthracene derivatives, in the case of naphthacene, pentacene, etc., those having structural isomers can be used more preferably. Of these, 2-substituted naphthacene, 4-substituted naphthacene, 2-substituted pentacene and the like are particularly preferable. Here, the disubstituted naphthacene is preferably one in which the 5th and 12th positions of the naphthacene skeleton are substituted. Further, the 4-substituted naphthacene is preferably one in which the 5th, 6th, 11th and 12th positions of the naphthacene skeleton are substituted. The disubstituted pentacene is preferably one in which the 6th and 13th positions of the pentacene skeleton are substituted.

  Moreover, the following are mentioned as an example of the anthracene precursor compound represented by General formula (2).

  The anthracene derivative and anthracene precursor compound used in the present invention can be synthesized by a known method. In order to synthesize an anthracene derivative, for example, a method in which an arylboronic acid is cross-coupled to an anthracene halide using a palladium catalyst or the like can be used. Moreover, as a method of connecting the 5-position and 12-position of naphthacene with an aryl group, a method in which an aryl halide and 5,12-naphthacenequinone are connected using n-butyllithium and then reduced with a tin catalyst can be used. Moreover, in order to synthesize an anthracene precursor compound, a method using a corresponding anthracene derivative can be mentioned. For example, after adding vinylene carbonate by Diels-Alder reaction to the 9th and 10th positions of anthracene derivatives with aryl groups linked to the 2nd and 6th positions, hydrolysis is performed, and this is further subjected to Swern oxidation to diketo bridges. A structure can be formed. Further, an ethylene cross-linked structure can be formed by a method exemplified in Journal of The American Chemical Society, 1965, Vol. 87, No. 20, pages 4649-4651.

  The anthracene derivative and the anthracene precursor compound used in the present invention are preferably removed from impurities such as raw materials and by-products used in the synthesis process. As a method for removing impurities, for example, silica gel columnography, recrystallization, reprecipitation, filtration, sublimation purification, and the like can be used. Two or more of these methods may be combined.

  The thickness of the transfer layer 37 can be adjusted by their functions and the number of transfers. In the case of the organic EL light emitting layer which is a suitable patterning thin film of the present invention, the thickness of the transfer material for one transfer is preferably 10 to 100 nm, more preferably 20 to 50 nm.

  The method for forming the transfer layer is not particularly limited, and examples thereof include a method for forming the entire surface on the donor substrate using a dry process such as vacuum deposition or sputtering. As a method that can easily cope with an increase in size, it is preferable to form a transfer layer by applying a solution containing a transfer material and a solvent on a donor substrate and drying the solvent. Examples of the coating method include inkjet, nozzle coating, electropolymerization and electrodeposition, offset and flexographic printing, lithographic printing, relief printing, gravure, screen printing, and other various printing methods.

  When a solution composed of a transfer material and a solvent is used in the coating method, a known material such as an alcohol, hydrocarbon, aromatic compound, heterocyclic compound, ester, ether, or ketone can be used as the solvent. General purpose solvents such as toluene, xylene, chlorobenzene, chloroform, dichloromethane, dichloroethane, ethyl acetate, tetrahydrofuran, trimethylbenzene, γ-butyrolactone, n-methylpyrrolidone, tetralin, o-dichlorobenzene, trichlorobenzene, ethyl benzoate, etc. And having a boiling point and viscosity suitable for the coating method to be used can be selected. In addition, these solvents may be used alone, or a plurality of solvents may be mixed and used. Moreover, it may dissolve by adding ultrasonic irradiation or heat treatment, and a step of filtration may be added after dissolution.

  In particular, since the anthracene precursor compound represented by the general formula (2) is generally more soluble than the anthracene derivative represented by the general formula (1), it is preferably used for forming a transfer layer by a coating method. be able to.

  Further, the transfer material may contain a plurality of anthracene derivatives represented by the general formula (1) and an anthracene precursor compound represented by the general formula (2). In addition, other compounds may be contained depending on the type of device to be produced. For example, when the transfer layer is used as the light emitting layer of the organic EL element, it contains a material exhibiting performance as a dopant. It doesn't matter. A well-known thing can be used as a dopant material, For example, indenoperylene, pyromethene, those derivatives, etc. are mentioned.

  Although FIG. 1 illustrates the case where there is one type of transfer layer on the donor substrate, the present invention also applies to a case where there are a plurality of types of transfer layers 37 such as R, G, and B as shown in FIG. Applicable. Although there are three types in FIG. 7, of course, two types or four or more types may be used. In such a case, the anthracene derivative represented by the general formula (1) or the anthracene precursor compound represented by the general formula (2) may be contained in at least one transfer layer.

  The anthracene precursor compound represented by the general formula (2) can be converted into an anthracene derivative represented by the general formula (1) by performing a conversion treatment. Devices such as organic EL elements exhibit high performance in the state of anthracene derivatives, and therefore, when an anthracene precursor compound is formed, it is preferable to perform a conversion treatment next.

  The conversion treatment described here is a treatment that causes a structural change of the anthracene precursor compound by heating, light irradiation, contact with a chemical solution, or the like, and converts it into an anthracene derivative. In this case, as a factor causing the structural change, one that does not remain in the constituent material of the device is preferable in order not to deteriorate the characteristics of the device. Accordingly, treatment such as heating and light irradiation, treatment with a volatile compound, and the like are preferable. Volatile compounds refer to acids and alkalis that do not remain after treatment, such as hydrochloric acid ether complexes and ammonia gas.

  A hot plate, an inert oven, an infrared heater, or the like can be used for heating. Moreover, when converting a structure by light irradiation, it is preferable to use ultraviolet light-visible light. However, depending on the precursor compound used, an undesirable photoreaction may occur due to ultraviolet light, so it is more preferable to use visible light.

  Moreover, when changing a structure by contact with a chemical | medical solution, the method of immersing a board | substrate in the storage layer which stored the chemical | medical solution, the method of spray-coating a chemical | medical solution, etc. can be illustrated. In either case, the conversion may be promoted by heating after contact with the chemical solution. Moreover, you may introduce the process of wash | cleaning a chemical | medical solution after conversion.

  Since the anthracene derivative used in the present invention is easily deteriorated, when an anthracene precursor compound is subjected to a conversion treatment, there is little factor that other substances come into contact with the converted anthracene derivative, and a structure by light irradiation and / or heat treatment is used. Changes are particularly preferred. Furthermore, these reactions are preferably carried out in vacuum or under inert conditions in order to suppress degradation of the anthracene derivative.

Specific examples of the conversion reaction include a Retro Diels-Alder reaction, a cheletpy reaction, a decarboxylation reaction, a decarbonylation reaction from a carbonyl compound, and a deoxygenation reaction. An optimal conversion process can be selected for each reaction. For example, in general formula (2), when X is C═O, decarbonylation reaction by light irradiation, and when X is CH ₂ , ethylene elimination reaction by heating, etc. can be mentioned. The reaction can be preferably used because the leaving group is a gas and does not remain in the transfer layer. For example, in the above-mentioned compound [79], compound [81], and compound [83], two molecules of carbon monoxide are eliminated by light irradiation and converted into compound [32], compound [33], and compound [34], respectively. Is done.

  The degree of degradation of the anthracene derivative on the donor substrate can be determined by analyzing by high performance liquid chromatography-ultraviolet absorptiometry.

  Specific analysis conditions in this analysis method will be described. Silica gel is used as the filler, and among them, octadecyl group-bonded silica gel, octyl group-bonded silica gel, and phenyl group-bonded silica gel are preferably used, and these can be selected depending on the type of anthracene derivative and anthracene precursor compound. As the mobile phase, acetonitrile, tetrahydrofuran, distilled water, phosphoric acid aqueous solution, methanol or the like can be used, and these may be used in combination. In particular, detection can be performed with high resolution by using only acetonitrile or a mixed solvent of acetonitrile-phosphoric acid aqueous solution. In addition, the liquid feeding pressure of the mobile phase at this time is preferably about 35 MPa to 50 MPa.

  The donor substrate for transfer containing the anthracene derivative and the anthracene precursor compound of the present invention is preferably used as a transfer substrate for the light emitting material of the organic EL element, but devices such as organic TFTs, photoelectric conversion elements, and various sensors can be used. You may use as a material which forms the thin film to comprise.

  Next, a method for transferring a transfer layer to a device substrate using the donor substrate of the present invention will be described. FIG. 8 is a cross-sectional view showing an example of a method for irradiating a donor substrate with light according to the present invention. 8A, the donor substrate 30 includes a support 31, a photothermal conversion layer 33, an inactivation processing surface 36, a partition pattern 34, and one type of transfer layer 37 present in the partition pattern. Consists of the support 21 only. Although it is possible to irradiate light represented by laser aiming only at a portion where the transfer layer 37 exists, as shown in FIG. 8B, light is incident from the support 31 side of the donor substrate 30, The light-heat conversion layer 33 can be irradiated with light so that at least a part of the transfer layer 37 and at least a part of the partition pattern 34 are heated simultaneously. By adopting such an arrangement, the temperature drop at the boundary between the partition pattern 34 and the transfer layer 37 is suppressed, so that the transfer material existing at the boundary is sufficiently heated to transfer, and the uniform transfer film 27 is formed. Can be obtained.

  FIG. 8B schematically shows a process in which the transfer layer 37 is heated and evaporated to be deposited on the support 21 of the device substrate 20 as the transfer film 27. At this time, the light irradiation can be stopped (the light irradiation of the portion is terminated by the movement of the light irradiation portion), and the light irradiation is continued as it is to transfer the entire right side portion of the transfer layer 37, The left part can also be transferred. In the present invention, if a material and light irradiation conditions are selected, an ablation mode in which the transfer layer 37 reaches the support 21 of the device substrate 20 with the film shape maintained can be used. However, from the viewpoint of reducing damage to the material, it is preferable to use a vapor deposition mode in which the transfer layer 37 evaporates in a state of being loosened by 1 to 100 molecules (atoms) and transferred.

  In FIG. 8C, the light-heat conversion layer 33 is irradiated with light wider than the width of the transfer layer 37 so that the entire width of the transfer layer 37 and a part of the width of the partition pattern 34 are simultaneously heated. One of the preferable aspects of this invention is shown. According to this arrangement, the desired pattern of the transfer film 27 can be efficiently obtained by one transfer. Alternatively, the load on the transfer layer 37 can be further reduced by transferring half the film thickness of the transfer layer 37 by the first light irradiation and transferring the other half by the second light irradiation.

  It is particularly preferable according to the present invention that the transfer layer 37 is transferred in a plurality of times in the film thickness direction by irradiating light to the photothermal conversion layer 33 in a plurality of times with respect to one donor substrate 30. This is a transfer method. As a result, not only the transfer layer 37 but also the partition pattern 34 and the underlying layer formed on the device substrate 20 can be reduced in maximum temperature, so that damage to the donor substrate and device performance can be prevented. . In the case of dividing, the number n is not limited. However, if the amount is too small, the above-mentioned effect under low temperature is not sufficiently exhibited. The range of is preferable.

In the conventional method in which only the transfer material corresponding to one pixel is partially transferred, the effect of suppressing the material deterioration can be obtained even if the transfer is divided n times in the film thickness direction, but the processing per substrate is obtained. Since the time is approximately n times, there is a problem that productivity is greatly reduced. However, in the present invention, m (m is an integer of 2 or more) transfer materials can be transferred at once, so that productivity can be maintained. In particular, it is preferable to use wide light that satisfies the condition of m ≧ n because high productivity equal to or higher than that of the conventional method can be secured. In the production of displays, even a large substrate needs to be processed in about 2 minutes per sheet. Assuming that the laser scanning speed is 0.6 m / s as standard and one side of the substrate is 3 m, considering that 2 minutes are required for 24 scans (12 reciprocations), the number of divisions n is 15 times. The range of 30 times or less is particularly preferable. It is not uncommon for the transfer layers 37R, 37G, and 37B to have temperature characteristics with different evaporation rates. Therefore, for example, as shown in FIG. 9 to be described later, when the wide uniform light is irradiated, the transfer layer 37B is transferred with the entire film thickness by the first irradiation, but each of 37R and 37G has a half film thickness. May be transferred. In this case, the remaining transfer of 37R and 37G can be completed by the second irradiation. At this time, the transfer layer 37B does not exist on the donor substrate 30 after the first irradiation, but the second irradiation can be performed in the same arrangement as the first irradiation. In the same way, for example, 37R can be transferred 10 times, 37G 7 times, 37B 5 times, and the like. It is also possible to use a donor substrate on which only the transfer layer 37B is not formed and only 37R and 37G are formed.

  When the transfer layers 37R, 37G, and 37B are light emitting materials for organic EL elements, it is not uncommon for the transfer material to be a mixture of a host material and a dopant material, which have different evaporation rate temperature characteristics. For example, when the evaporation temperature of the dopant material is lower than that of the host material, a phenomenon in which all of the dopant material evaporates first when heated at a low temperature for a long time is likely to occur. On the other hand, a high temperature heating of a certain level or more makes it possible to use a phenomenon called flash evaporation in which the host material and the dopant material are evaporated at substantially the same ratio. In the present invention, since not only the light irradiation time and the light irradiation intensity but also the number of transfers can be controlled, it is relatively easy to find an appropriate high-speed evaporation condition according to flash evaporation while suppressing material deterioration. Therefore, it is possible to realize a transfer in which the ratio of the host material and the dopant material does not change before and after the transfer.

  In addition, about one half of the film thickness of the transfer layer 37 is transferred to one device substrate by one light irradiation, and the other half is transferred to another device substrate. The transfer to the device substrate 20 can also be performed. If the film thickness of the transfer material transferred to each device substrate is adjusted, transfer from one donor substrate to three or more device substrates is also possible.

  In the arrangement of light irradiation illustrated in FIG. 8C, the position of the light irradiation is displaced by δ as shown in FIG. 8D, and the entire width of the transfer layer 37 and a part of the width of the partition pattern 34 are obtained. Since the heating is not changed at the same time, the uniform transfer film 27 can be obtained in the same manner.

  When the transfer layer is an anthracene precursor compound represented by the general formula (2), the conversion step is performed before the transfer step (Method I) or performed simultaneously with the transfer step (Method II). Is preferred. In the case of the method I, after the anthracene precursor compound represented by the general formula (2) is coated on the donor substrate, the conversion to the anthracene derivative represented by the general formula (1) is performed by the above method. Then, transfer to the device substrate. In the case of Method II, after the anthracene precursor compound represented by the general formula (2) is applied on the donor substrate, the donor substrate and the device substrate are overlapped and transferred to the device substrate. Transfer is performed while converting the precursor compound into an anthracene derivative represented by the general formula (1) by using energy by heating or light irradiation. When transfer is performed with near-infrared laser light, laser light for transfer and light for conversion can be irradiated simultaneously. Among these, Method I is preferable because conversion from the precursor material to the device material can be performed uniformly and at a high conversion rate.

  Next, a method for manufacturing a device using the donor substrate of the present invention will be described. In the present invention, the device includes an organic EL element, an organic TFT, a photoelectric conversion element, various sensors, and the like. In the organic TFT, various electrodes such as an organic semiconductor layer, an insulating layer, a source, a drain, and a gate can be patterned according to the present invention. In an organic solar cell, an electrode and the like can be patterned. Below, the organic EL element is mentioned as an example and the manufacturing method is demonstrated.

  9 and 10 are a cross-sectional view and a plan view showing an example of the thin film patterning method of the present invention. In the drawings used in this specification, the minimum unit of RGB sub-pixels constituting a large number of pixels in a color display is extracted and described. In order to help understanding, the magnification in the vertical direction (substrate vertical direction) is increased as compared with the horizontal direction (substrate in-plane direction).

  In FIG. 9, the donor substrate 30 includes a support 31, a photothermal conversion layer 33, an inactivation processing surface 36, a partition pattern 34, and a transfer layer 37 existing in the partition pattern (a coating film of RGB light emitting materials of organic EL). And at least part of the transfer layer 37 contains an anthracene derivative represented by the general formula (1) or an anthracene precursor compound represented by the general formula (2). The organic EL element (device substrate) 10 includes a support 11, a TFT (including extraction electrode) 12 formed thereon, a planarization film 13, an insulating layer 14, a first electrode 15, and a hole transport layer 16. In addition, since these are illustrations, the structure of each board | substrate is not limited to these as mentioned later.

  In a state where the partition pattern 34 of the donor substrate 30 and the insulating layer 14 of the device substrate 10 are aligned, the two substrates are arranged to face each other. A laser is incident from the support 31 side of the donor substrate 30 to be absorbed by the photothermal conversion layer 33, and the transfer layers 37R, 37G, and 37B are simultaneously heated and evaporated by heat generated in the photothermal conversion layer 33 and passed through the inert layer 36. Then, by depositing them on the hole transport layer 16 of the device substrate 10, the light emitting layers 17R, 17G, and 17B are collectively transferred and formed. Laser irradiation is performed so that the entire area of the partition pattern 34 sandwiched between the transfer layers 37R, 37G, and 37B and a part of the partition pattern 34 located outside the transfer layers 37R and 37B are heated simultaneously with the transfer layer 37. It is possible.

  Furthermore, as one of the preferred embodiments of the present invention, when the thickness of the partition pattern is made thicker than the transfer material, the temperature of the portion of the partition pattern that is thicker than the transfer layer does not increase so much. This is because the partition pattern is heated from the bottom, so that the top has a distance and is not easily warmed. Therefore, the device substrate is not heated to a high temperature through the partition pattern, there is almost no influence of degassing from the partition pattern, and the device performance is not deteriorated.

  In addition, according to the present invention, different transfer materials that are separated by the partition pattern can be simultaneously irradiated with light so as to straddle the partition pattern, so that different transfer materials can be collectively transferred. For example, when RGB light-emitting layers in an organic EL display are patterned according to the present invention, the RGB light-emitting layers can be transferred together as a set, so that it is necessary to sequentially irradiate the RGB light-emitting layers with light. Compared with the conventional method, the patterning time can be shortened.

  Since light is sufficiently absorbed by the light-to-heat conversion layer, RGB light-emitting layers having different light absorption spectra can be heated to the same temperature using the same light source, and the device substrate is heated by the transmitted light. There is no worry. In addition, the presence of the inactive layer can reduce material deterioration caused when the transfer layer is in contact with the photothermal conversion layer. Since the partition pattern exists, adjacent different transfer materials can be mixed and transfer of a portion where the boundary position fluctuates can be eliminated, so that device performance is not impaired even if batch transfer is performed.

  In addition, since the partition pattern can be patterned with high accuracy by a photolithography method or the like, a gap between transfer patterns of different transfer materials can be minimized. This leads to an effect that an organic EL display having a higher aperture ratio and excellent durability can be produced.

  FIG. 10 is a schematic view of the state of laser irradiation in FIG. 9 as viewed from the support 31 side of the donor substrate 30. Since the photothermal conversion layer 33 is formed on the entire surface, the inactivation treatment surface 36, the partition pattern 34, and the transfer layers 37R, 37G, and 37B are not actually visible from the support 31 (glass plate) side, but the laser In order to explain the positional relationship with The laser beam has a rectangular shape, is irradiated so as to straddle the transfer layers 37R, 37G, and 37B, and is scanned in a direction perpendicular to the arrangement of the transfer layers 37R, 37G, and 37B. The laser beam only needs to be scanned relatively, and the laser may be moved, the set of the donor substrate 30 and the device substrate 20 may be moved, or both.

  As often seen in display applications, when the set of transfer layers 37R, 37G, and 37B is repeatedly formed k times in the x direction and h times in the vertical y direction, for example, m sets (m By scanning light in the y direction while simultaneously irradiating light onto the transfer layers 37R, 37G, and 37B having a number of 2 to k, the transfer time can be reduced to about 1 / m.

  In the case of m = k, as shown in FIG. 11A, the entire transfer material is collectively transferred in one scan by irradiating light that covers the entire width of the transfer region 38 of the donor substrate 30. You can also With this arrangement, alignment of light irradiation with respect to the donor substrate 30 can be greatly reduced. As shown in FIG. 11B, when there are a plurality of transfer regions 38 on the substrate, it is also possible to transfer them all at once. As is called a delta arrangement, even when the RGB sub-pixels are not arranged in a straight line, the irradiation light can be scanned in a straight line, so that the transfer can be easily performed.

  In the case of m <k, for example, as shown in FIG. 12A, light that covers about half the width of the transfer region 38 of the donor substrate 30 is irradiated, and the next scan is performed as shown in FIG. Then, the other half is irradiated with light, and the entire transfer material can be transferred in two scans (when m≈k / 2). Furthermore, as shown in FIG. 13, by simultaneously scanning two lights having different positional relationships in the scanning direction, the pre-transfer material layer 37 can be transferred in the same manner as in the above two scans. Even if it is difficult to obtain a single light that covers the entire width of the transfer region 38 due to restrictions such as the maximum output of the light source and the uniformity of the light, a pseudo one-time scan (m = k) can be achieved by doing so. In the same manner as above, all transfer materials can be transferred collectively. Of course, as shown in FIG. 14, the same effect can be obtained by further reducing the width of light and increasing the number.

  The plurality of lights can be overlapped as shown in FIG. The light may irradiate the entire transfer region, and the width of irradiation light, the order of irradiation, the degree of overlap, and the like can be selected optimally from various transfer conditions. Among these, it is preferable to overlap light at a specific transfer material layer position among the two or more types of transfer layers 37. As schematically shown in FIG. 15, a temperature gradient is inevitably generated at the light boundary position, and the influence varies little by little depending on the type of the transfer layer 37. When light is overlapped at random positions, two or more types of transfer films 17 having different uneven states are generated, and it is difficult to suppress them simultaneously. On the other hand, if the influence of the temperature gradient is limited to a specific transfer film, it is possible to select a transfer material layer that is less likely to cause unevenness, and further to select light irradiation conditions that minimize the unevenness. It becomes possible to suppress to the minimum.

  The method for selecting a specific transfer material layer is not particularly limited. The transfer layer 37 has the lowest (or highest) transfer temperature, the highest thermal decomposition temperature (or lowest), or the film thickness so that unevenness is minimized in the finally obtained device. The thinnest (or thickest) material may be selected according to the purpose.

  When two or more different transfer materials are each composed of a mixture of two or more materials such as a host material and a dopant material, transfer of the combination of transfer materials having the smallest difference in sublimation temperature between the two or more materials. It is preferable to overlap the light at the position of the layer 37 (for example, 37G). In the organic EL element, it is known that the composition ratio of the host material and the dopant material particularly affects the light emission performance. According to the above method, the composition of the transfer film 17 is affected by the temperature gradient at the overlap position. The ratio at which the ratio changes can be minimized to suppress unevenness in the transfer film 17 and maintain good light emission characteristics.

  Further, when a transfer layer made of one kind of material is included in two or more different transfer layers, it is preferable to overlap light at the position of the transfer layer 37 made of the one kind of material. In this case, since there is no need to consider the change in the composition ratio in this transfer material layer, the influence of the temperature gradient at the overlap position becomes extremely small.

  In the example of batch transfer described above, when the transfer layers 37R, 37G, and 37B have different evaporation temperatures (temperature dependence of vapor pressure), one light irradiation is performed according to the transfer material having the highest evaporation temperature. Batch transfer may be performed. On the other hand, for example, when the transfer layer 37R has the lowest evaporation temperature, the transfer layer 37R is entirely transferred by a single light irradiation, and 37G and 37B are partially transferred, and the light irradiation is repeated to 37G, The remainder of 37B may be transferred, or may be divided into three or more transfers. Since the transfer time can be shortened to about 1 / m, the damage to the transfer layer 37 can be further reduced by dividing the transfer time into m times over the same time. The optimum one can be selected from various transfer conditions while taking into consideration the time available for the transfer process and the damage to the transfer material.

  FIG. 16 shows another example of batch transfer according to the present invention. By irradiating light having a width corresponding to the sum of the width of the transfer layer 37G and the width of the partition pattern 34 across the transfer layers 37R and 37G, a part of each of the transfer layers 37R and 37G is collectively transferred. By repeating this transfer method many times while shifting the position of the next irradiation light by the width of the irradiation light, the transfer of all the transfer layers 37R, 37G, and 37B is finally completed. In this method, it is not necessary to strictly control the positional relationship between the irradiation light and the donor substrate. Furthermore, it is not necessary to shift the position of the next irradiation light exactly by the width of the previous irradiation light, and they may be overlapped. The light may finally irradiate the entire transfer region, and the width of irradiation light, the order of irradiation, the degree of overlap, and the like are not particularly limited. Even with the delta arrangement described above, the irradiation light can be scanned linearly.

  As described above, the great effect of the batch transfer is that it is not necessary to control the light irradiation position as precisely as in the conventional method. For example, when light is emitted from a light source placed in the atmosphere to a donor substrate 30 placed in a vacuum, the conventional method cannot neglect a minute optical path change caused by a transparent window that separates the atmosphere and the vacuum. There is a problem that it is necessary to put all the light source and the light scanning mechanism in a vacuum, which imposes a large burden on the apparatus. On the other hand, in the method of the present invention, the above optical path change can be ignored, so that not only the light irradiation apparatus but also the entire mechanism of the transfer process apparatus can be simplified.

  The batch transfer has another effect. In the wide light irradiation range, the lateral thermal diffusion that has become a problem in laser transfer does not occur, so it is possible to irradiate light for a relatively long time, such as by scanning the laser at a relatively low speed. It becomes possible. Therefore, the maximum temperature of the transfer material can be controlled more easily, and high-precision patterning can be performed without damaging the transfer material during transfer, so that deterioration in device performance can be minimized. Further, the reduction of the damage to the transfer material means that the damage to the partition pattern is also reduced at the same time, and even if the partition pattern is formed of an organic material, the deterioration hardly occurs. Therefore, the donor substrate can be reused a plurality of times, and the cost for patterning can be reduced.

  In the above example, rectangular light is scanned in the y direction. However, as shown in FIG. 17, scanning can be performed in the x direction of the arrangement of the transfer layers 37R, 37G, and 37B. Further, the scanning speed and the light intensity do not need to be constant. In the scanning in the x direction, for example, the scanning speed and the light intensity are set so as to be optimal conditions for each evaporation temperature of the transfer layers 37R, 37G, and 37B. It can also be modulated during the scan. The scanning direction is preferably a direction along the partition pattern 34 in the x direction or the y direction, but is not particularly limited, and scanning in an oblique direction is also possible.

  The scanning speed is not particularly limited, but a range of 0.01 to 2 m / s is generally preferably used. When the light irradiation intensity is relatively small and the damage to the transfer material is reduced by scanning at a lower speed, the scanning speed is preferably 0.6 m / s or less, more preferably 0.3 m / s or less. . When the overall temperature is lowered by increasing the number of divisions as in the above-described divided transfer, the scan speed is relatively high, 0.3 m / s or more in order to reduce the amount of input heat per scan. It is preferable that

  As a light source of irradiation light, a laser that can easily obtain high intensity and excellent in shape control of irradiation light can be exemplified as a preferable light source. However, a light source such as an infrared lamp, a tungsten lamp, a halogen lamp, a xenon lamp, or a flash lamp is used. You can also As the laser, a known laser such as a semiconductor laser, a fiber laser, a YAG laser, an argon ion laser, a nitrogen laser, or an excimer laser can be used. Since one of the objects in the present invention is to reduce damage to the transfer material, the continuous wave mode (CW) laser is more suitable than the intermittent oscillation mode (pulse) laser irradiated with high intensity light in a short time. Is preferred.

  The wavelength of the irradiation light is not particularly limited as long as the absorption in the irradiation atmosphere and the support of the donor substrate is small and it is efficiently absorbed in the photothermal conversion layer. Therefore, not only visible light region but also ultraviolet light to infrared light can be used. Considering a suitable support material for the donor substrate, 300 nm to 5 μm can be exemplified as a preferable wavelength region, and 380 nm to 2 μm can be illustrated as a more preferable wavelength region.

  The shape of irradiation light is not limited to the rectangle illustrated above. The optimum shape can be selected according to the transfer conditions such as linear, elliptical, square, polygonal. Irradiation light may be formed by superposition from a plurality of light sources, or conversely, a single light source may be divided into a plurality of irradiation lights. As shown in FIG. 18, each irradiation time (heating time) to the transfer layers 37R, 37G, and 37B is adjusted by scanning light having a stepwise width in the scan direction, and each of the transfer layers 37R, 37G, and 37B is adjusted. Batch transfer optimized for the evaporation temperature can be performed. It is also possible to make the irradiation energy density (irradiation intensity × irradiation time) constant by modulating the width in the scanning direction of the light corresponding to the unevenness of the irradiation light intensity. Further, as shown in FIG. 19, scanning may be performed in the y direction in an arrangement in which rectangular light is irradiated obliquely. When the shape (width) of the irradiation light is fixed, it is possible to cope with transfer having various pitches without requiring a large change in the optical system.

  In addition, as shown in FIG. 20A, light covering the entire region of the transfer region 38 of the donor substrate 30 can be irradiated. In this case, all transfer materials can be collectively transferred without scanning the irradiation light. Furthermore, as shown in FIG. 20B, step irradiation may be used in which light that partially covers the transfer region 38 of the donor substrate 30 is irradiated and then an unirradiated portion is irradiated. Also in this case, since the positions before and after the irradiation light may be overlapped, the alignment of the light irradiation can be greatly reduced.

The preferable range of irradiation intensity and heating temperature of the transfer material are: uniformity of irradiation light, irradiation time (scanning speed), donor substrate support, photothermal conversion layer and inert layer material and thickness, reflectance, partition pattern It is influenced by various conditions such as the material and shape of the transfer material and the material and thickness of the transfer material. In the present invention, the energy density absorbed in the light-to-heat conversion layer is in the range of 0.01 to 10 J / cm ² , and it is a guideline that the irradiation conditions are adjusted so that the transfer material is heated in the range of 220 to 400 ° C. .

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated, this invention is not limited by these Examples.

  The measurement was performed using octyl group-bonded silica gel as the filler of HPLC (manufactured by Shimadzu Corporation) and acetonitrile as the mobile phase.

  Whether the surface of the photothermal conversion layer was inactivated was confirmed using an X-ray photoelectron spectrometer (manufactured by ULVAC-PHI).

Example 1
A donor substrate was prepared as follows. Using a non-alkali glass substrate as a support, after cleaning / UV ozone treatment, titanium having a thickness of 0.2 μm is formed as a photothermal conversion layer by sputtering, followed by nitrogen plasma treatment for 30 minutes to produce a photothermal conversion layer. The surface was titanium nitride. Next, after the photothermal conversion layer on which the inactive layer is laminated is subjected to UV ozone treatment, a positive polyimide photosensitive coating agent (DL-1000, manufactured by Toray Industries, Inc.) is spin-coated thereon, and prebaking, UV After the exposure, the exposed area was dissolved and removed with a developer (ELM-D, manufactured by Toray Industries, Inc.).

  The polyimide precursor film thus patterned was baked on a hot plate at 350 ° C. for 10 minutes to form a polyimide-based partition pattern. The partition pattern had a height of 2 μm and a cross section of a forward tapered shape. Openings exposing the photothermal conversion layer in which an inactive layer having a width of 80 μm and a length of 280 μm was laminated were arranged at a pitch of 100 and 300 μm inside the partition pattern. On this substrate, a chloroform solution containing 0.4% by weight of the compound [34] was spin-coated and dried to form a transfer material having an average thickness of 40 nm made of the compound [34] in the partition pattern (opening). . The purity of the chloroform solution of the compound [34] used at this time was analyzed by HPLC, and the areas of detection peaks were compared. As a result, the peak other than the compound [34] was 0.05 with respect to the compound [34] 100. It was.

  Further, when the purity of the transfer material on the donor substrate was analyzed and compared in the same manner, the peak of the compound [34] 100 other than the compound [34] was 0.23.

Example 2
A donor substrate is formed in the same manner as in Example 1 except that molybdenum is formed as a photothermal conversion layer on the entire surface of the support substrate by sputtering of 0.2 μm and oxygen plasma treatment is performed for 30 minutes to change the photothermal conversion layer surface to molybdenum oxide. Produced. When the purity of the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [34] was 0.32 with respect to the compound [34] 100.

Example 3
The donor substrate was formed in the same manner as in Example 1 except that chromium was formed on the entire surface of the support substrate by sputtering as a photothermal conversion layer by 0.2 μm sputtering, and then the surface of the photothermal conversion layer was changed to chromium nitride by performing nitrogen plasma treatment for 30 minutes. Produced. When the purity of the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than compound [34] was 0.35 relative to compound [34] 100.

Example 4
A donor substrate is formed in the same manner as in Example 1 except that tantalum is formed on the entire surface of the support substrate by sputtering as a photothermal conversion layer by 0.2 μm sputtering, and thereafter the surface of the photothermal conversion layer is changed to tantalum nitride by performing nitrogen plasma treatment for 30 minutes. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of detection peaks were compared. As a result, the peak other than compound [34] was 0.13 relative to compound [34] 100.

Example 5
A donor substrate is formed in the same manner as in Example 1 except that tungsten is formed as a photothermal conversion layer on the entire surface of the support substrate by sputtering with a thickness of 0.2 μm and oxygen plasma treatment is performed for 30 minutes to change the surface of the photothermal conversion layer to tungsten oxide. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of the detection peaks were compared. As a result, the peak other than compound [34] was 0.25 with respect to compound [34] 100.

Example 6
A donor substrate was formed in the same manner as in Example 1 except that molybdenum was formed on the support substrate as a photothermal conversion layer by sputtering with a thickness of 0.2 μm, and then the surface of the photothermal conversion layer was changed to molybdenum nitride by performing nitrogen plasma treatment for 30 minutes. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of the detection peaks were compared. As a result, the peak other than compound [34] was 0.28 relative to compound [34] 100.

Example 7
A donor substrate was prepared in the same manner as in Example 1 except that the compound [32] was used instead of the compound [34]. The purity of the solution of the compound [32] used was analyzed by HPLC, and the areas of detection peaks were compared. As a result, the peak other than the compound [32] was 0.12 with respect to the compound [32] 100. Further, when the purity of the transfer material on the donor substrate was similarly analyzed and compared, the peak of the compound [32] 100 other than the compound [32] was 0.23.

Example 8
A donor substrate was formed in the same manner as in Example 7 except that vanadium was formed on the support substrate as a photothermal conversion layer by sputtering on the entire surface by 0.2 μm sputtering, and thereafter the surface of the photothermal conversion layer was changed to vanadium nitride by performing nitrogen plasma treatment for 30 minutes. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of detection peaks were compared. As a result, the peak other than compound [32] was 0.40 with respect to compound [32] 100.

Example 9
The donor substrate was formed in the same manner as in Example 7 except that chromium was formed on the support substrate as a photothermal conversion layer by sputtering on the entire surface by 0.2 μm sputtering, and thereafter the surface of the photothermal conversion layer was changed to chromium nitride by performing nitrogen plasma treatment for 30 minutes. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of the detection peaks were compared. As a result, the peak other than compound [32] was 0.45 with respect to compound [32] 100.

Example 10
A donor substrate was formed in the same manner as in Example 7 except that tantalum was formed on the support substrate as a photothermal conversion layer by sputtering on the entire surface by 0.2 μm sputtering, and thereafter the surface of the photothermal conversion layer was changed to tantalum nitride by performing nitrogen plasma treatment for 30 minutes. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of the detection peaks were compared. As a result, the peak other than compound [32] was 0.28 relative to compound [32] 100.

Example 11
A donor substrate was formed in the same manner as in Example 7 except that vanadium was formed on the support substrate as a photothermal conversion layer over the entire surface by 0.2 μm sputtering, and then the oxygen plasma treatment was performed for 30 minutes to change the photothermal conversion layer surface to vanadium oxide. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of the detection peaks were compared. As a result, the peak other than compound [32] was 0.44 with respect to compound [32] 100.

Example 12
A donor substrate is formed in the same manner as in Example 7 except that tungsten is formed on the support substrate as a photothermal conversion layer by sputtering on the entire surface by 0.2 μm sputtering, and then oxygen plasma treatment is performed for 30 minutes to change the photothermal conversion layer surface to tungsten oxide. Produced. When the purity of the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than compound [32] was 0.38 relative to compound [32] 100.

Example 13
A donor substrate was prepared in the same manner as in Example 1 except that the compound [33] was used instead of the compound [34]. The purity of the solution of the compound [33] used was analyzed by HPLC, and the areas of detection peaks were compared. As a result, the peak other than the compound [33] was 0.15 with respect to the compound [33] 100. Further, when the purity of the transfer material on the donor substrate was similarly analyzed and compared, the peak of the compound [33] 100 other than the compound [33] was 0.30.

Example 14
The donor substrate was formed in the same manner as in Example 13 except that chromium was formed on the entire surface of the support substrate by sputtering as a photothermal conversion layer by 0.2 μm sputtering, and then the oxygen plasma treatment was performed for 30 minutes to change the photothermal conversion layer surface to chromium oxide. Produced. When the purity of the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [33] was 0.44 with respect to the compound [33] 100.

Example 15
A donor substrate is formed in the same manner as in Example 13 except that tantalum is formed as a photothermal conversion layer on the entire surface of the support substrate by sputtering with a thickness of 0.2 μm, and then the surface of the photothermal conversion layer is changed to tantalum nitride by performing nitrogen plasma treatment for 30 minutes. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of the detection peaks were compared. As a result, the peak other than compound [33] was 0.35 relative to compound [33] 100.

Example 16
A donor substrate is formed in the same manner as in Example 13 except that tantalum is formed as a photothermal conversion layer on the entire surface of the support substrate by sputtering with a thickness of 0.2 μm and oxygen plasma treatment is performed for 30 minutes to change the photothermal conversion layer surface to tantalum oxide. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of detection peaks were compared. As a result, the peak other than compound [33] was 0.31 with respect to compound [33] 100.

Example 17
A donor substrate was formed in the same manner as in Example 13 except that tungsten was formed as a photothermal conversion layer on the entire surface of the support substrate by sputtering with a thickness of 0.2 μm and oxygen plasma treatment was performed for 30 minutes to change the photothermal conversion layer surface to tungsten oxide. Produced. When the purity of the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak of compounds other than compound [33] was 0.30 with respect to compound [33] 100.

Example 18
A compound [83] was used instead of the compound [34], and a thin film was produced on the donor substrate in the same manner as in Example 1. At this time, the purity of the solution of the compound [83] used was analyzed by HPLC, and the areas of the detected peaks were compared. As a result, the peak other than the compound [83] was 0.20 with respect to the compound [83] 100. It was. Subsequently, a donor substrate was obtained by irradiating the donor substrate with a blue light-emitting diode (center wavelength: 460 nm, half-value width: 5 nm) for 1 hour in vacuum to convert the structure to compound [34]. When the transfer material on the donor substrate was analyzed by HPLC and the areas of detection peaks were compared, the peak of compounds [34] 100 other than compound [34] was 0.48.

Example 19
A donor substrate was formed in the same manner as in Example 18 except that molybdenum was formed on the entire surface of the support substrate by sputtering as a photothermal conversion layer, and oxygen plasma treatment was performed for 30 minutes to change the photothermal conversion layer surface to molybdenum oxide. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of the detection peaks were compared. As a result, the peak other than compound [34] was 0.66 with respect to compound [34] 100.

Example 20
A donor substrate is formed in the same manner as in Example 18 except that tantalum is formed as a photothermal conversion layer on the entire surface of the support substrate by sputtering with a thickness of 0.2 μm, and then the surface of the photothermal conversion layer is changed to tantalum nitride by performing nitrogen plasma treatment for 30 minutes. Produced. When the purity of the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [34] was 0.44 with respect to the compound [34] 100.

Example 21
A donor substrate was formed in the same manner as in Example 18 except that tungsten was formed as a photothermal conversion layer on the entire surface of the support substrate by sputtering with a thickness of 0.2 μm and oxygen plasma treatment was performed for 30 minutes to change the photothermal conversion layer surface to tungsten oxide. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of the detection peaks were compared. As a result, the peak other than compound [34] was 0.60 with respect to compound [34] 100.

Example 22
A donor substrate was formed in the same manner as in Example 18 except that vanadium was formed on the support substrate as a photothermal conversion layer by sputtering on the entire surface by 0.2 μm sputtering, and thereafter the oxygen plasma treatment was performed for 30 minutes to change the photothermal conversion layer surface to vanadium oxide. Produced. When the purity of the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [34] was 0.64 with respect to the compound [34] 100.

Example 23
The compound [79] is used instead of the compound [34], and molybdenum is formed on the entire surface of the support substrate by 0.2 μm sputtering as the photothermal conversion layer, and then the surface of the photothermal conversion layer is nitrided by performing nitrogen plasma treatment for 30 minutes. A thin film was formed on the donor substrate in the same manner as in Example 1 except that molybdenum was used. At this time, the purity of the solution of the compound [79] used was analyzed by HPLC, and the areas of the detection peaks were compared. As a result, the peak other than the compound [79] was 0.20 relative to the compound [79] 100. It was. Subsequently, the donor substrate was converted into the compound [32] by irradiating the donor substrate with light emitted from the blue light emitting diode (center wavelength: 460 nm, half-value width: 5 nm) for 1 hour in vacuum. When the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [32] was 0.60 with respect to the compound [32] 100.

Example 24
The donor substrate was formed in the same manner as in Example 24 except that chromium was formed on the support substrate as a photothermal conversion layer by sputtering on the entire surface by 0.2 μm sputtering, and thereafter the surface of the photothermal conversion layer was changed to chromium nitride by performing nitrogen plasma treatment for 30 minutes. Produced. When the purity of the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [32] was 0.81 with respect to the compound [32] 100.

Example 25
A donor substrate is formed in the same manner as in Example 24 except that tantalum is formed as a photothermal conversion layer on the entire surface of the support substrate by sputtering with a thickness of 0.2 μm and oxygen plasma treatment is performed for 30 minutes to change the photothermal conversion layer surface to tantalum oxide. Produced. When the purity of the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [32] was 0.77 with respect to the compound [32] 100.

Example 26
A donor substrate was formed in the same manner as in Example 24 except that vanadium was formed on the support substrate as a photothermal conversion layer over the entire surface by 0.2 μm sputtering, and then the oxygen plasma treatment was performed for 30 minutes to change the photothermal conversion layer surface to vanadium oxide. Produced. The purity of the transfer material on the donor substrate was analyzed by HPLC, and the areas of the detection peaks were compared. As a result, the peak other than compound [32] was 0.80 relative to compound [32] 100.

Comparative Example 1
A donor substrate was prepared in the same manner as in Example 1 except that titanium was formed on the entire surface as the light-to-heat conversion layer, and the surface was not deactivated. When the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [34] was 4.02 with respect to the compound [34] 100.

Comparative Example 2
A donor substrate was prepared in the same manner as in Example 1 except that molybdenum was formed on the entire surface as the photothermal conversion layer and the surface was not deactivated. When the transfer material on the donor substrate was analyzed by HPLC and the areas of detection peaks in HPCL were compared, the peak other than compound [34] was 3.68 with respect to compound [34] 100.

Comparative Example 3
A donor substrate was prepared in the same manner as in Example 1 except that tantalum was formed over the entire surface as the photothermal conversion layer and the surface was not subjected to inactivation treatment. When the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [34] was 1.90 relative to the compound [34] 100.

Comparative Example 4
A donor substrate was prepared in the same manner as in Example 7 except that vanadium was formed on the entire surface as the photothermal conversion layer and the surface was not deactivated. When the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [32] was 3.86 with respect to the compound [32] 100.

Comparative Example 5
A donor substrate was prepared in the same manner as in Example 13 except that chromium was formed on the entire surface as the photothermal conversion layer and the surface was not deactivated. When the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [33] was 4.33 relative to the compound [33] 100.

Comparative Example 6
A donor substrate was produced in the same manner as in Example 18 except that titanium was formed on the entire surface as the photothermal conversion layer, and the surface was not subjected to inactivation treatment. When the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [34] was 4.38 with respect to the compound [34] 100.

Comparative Example 7
A donor substrate was produced in the same manner as in Example 18 except that molybdenum was formed on the entire surface as the photothermal conversion layer and the surface was not deactivated. When the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak of the compound [34] 100 other than the compound [34] was 4.00.

Comparative Example 8
A donor substrate was prepared in the same manner as in Example 18 except that tantalum was formed on the entire surface as the photothermal conversion layer and the surface was not subjected to inactivation treatment. When the transfer material on the donor substrate was analyzed by HPLC and the areas of the detection peaks were compared, the peak other than the compound [34] was 2.30 relative to the compound [34] 100.

  The results are summarized in Table 1.

10 Organic EL elements (device substrates)
11 Support 12 TFT (including extraction electrode)
DESCRIPTION OF SYMBOLS 13 Flattening layer 14 Insulating layer 15 1st electrode 16 Hole transport layer 17 Light emitting layer 20 Device substrate 21 Support body 27 Transfer film 30 Donor substrate 31 Support body 33 Photothermal conversion layer 34 Partition pattern 35 Liquid repellent treatment layer 36 Inactivation Treated surface 37 Transfer layer

Claims (4)

A donor substrate for transfer comprising a substrate, a photothermal conversion layer formed on the substrate, and a transfer layer formed on the photothermal conversion layer, wherein the surface of the photothermal conversion layer in contact with the transfer layer is inactivated And a transfer donor substrate comprising an anthracene derivative represented by the following general formula (1) or an anthracene precursor compound represented by the following general formula (2) in the transfer layer.

In the general formulas (1) and (2), R ^{1 to} R ¹⁰ may be the same or different from each other, and hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an alkenyl group, a cycloalkenyl group, an alkynyl group, an alkoxy group Group, alkylthio group, aryl ether group, aryl thioether group, aryl group, heteroaryl group, halogen, cyano group, carbonyl group, carboxyl group, oxycarbonyl group, carbamoyl group, amino group, silyl group, phosphine oxide group, and adjacent It is selected from the condensed rings formed between the substituents. In General Formula (2), X is an atom or atomic group selected from C═O, CH ₂ , O, or CHR ¹¹ . R ¹¹ is a substituent selected from an alkyl group, an alkenyl group, an alkoxy group or an acyl group, and may have a bond with each other to form a ring. ) The donor substrate for transfer according to claim 1, wherein the surface of the photothermal conversion layer in contact with the transfer layer is inactivated by being an oxide or a nitride. A method for manufacturing a device, comprising: a step of causing the donor substrate for transfer according to claim 1 or 2 to face a device substrate; and a step of irradiating the photothermal conversion layer with light. The transfer layer contains an anthracene precursor compound represented by the general formula (2), and the anthracene precursor compound represented by the general formula (2) is converted into an anthracene derivative represented by the general formula (1). The device manufacturing method according to claim 3, further comprising a step of:

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