JP2012231181A5 - Semiconductor device, semiconductor light source device, semiconductor device control method, and projection device - Google Patents

Semiconductor device, semiconductor light source device, semiconductor device control method, and projection device Download PDF

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JP2012231181A5
JP2012231181A5 JP2012171419A JP2012171419A JP2012231181A5 JP 2012231181 A5 JP2012231181 A5 JP 2012231181A5 JP 2012171419 A JP2012171419 A JP 2012171419A JP 2012171419 A JP2012171419 A JP 2012171419A JP 2012231181 A5 JP2012231181 A5 JP 2012231181A5
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本発明は、例えば直列接続された複数のLEDなどの半導体光源素子を用いる装置に好適な半導体装置、半導体光源装置、半導体装制御方法及び投影装置に関する。 The present invention is, for example, a plurality of series-connected semiconductor device suitable device using a semiconductor light source element such as a LED, a semiconductor light source device, a control method and projection apparatus of the semiconductor KaradaSo location.

本発明は上記のような実情に鑑みてなされたもので、その目的とするところは、できる限り簡素な回路構成としながらも、直列接続された半導体光源素子の異常を確実に検出することが可能な半導体装置、半導体光源装置、半導体装制御方法及び投影装置を提供することにある。 The present invention has been made in view of the above-described circumstances, and the object of the present invention is to reliably detect abnormality of semiconductor light source elements connected in series while having a circuit configuration as simple as possible. a semiconductor device, a semiconductor light source device is to provide a control method and a projection apparatus of the semiconductor KaradaSo location.

発明互いに接続された複数の半導体素子と、上記複数の半導体素子を駆動する駆動回路と、上記複数の半導体素子に接続された複数の抵抗と、上記複数の抵抗に印加される電圧値に基づいて上記複数の半導体素子中で短絡している素子を判定する判定手段とを具備したことを特徴とする。 The present invention includes a plurality of semiconductor elements connected to one another, and a drive circuit for driving the plurality of semiconductor voxel element, a plurality of resistors connected to said plurality of semiconductor element, said plurality of resistors characterized by comprising a determining means for determining element that are shorted in the plurality of semiconductor elements based on the voltage value applied to.

また、本発明は、互いに接続された複数の半導体素子と、上記複数の半導体素子に対し、電源の電圧の印加時間デューティを可変して異なる直流電圧で駆動するDC/DCコンバータによる駆動回路と、記駆動回路での印加時間デューティに基づいて上記複数の半導体素子中で短絡している素子を判定する判定手段とを具備したことを特徴とする。 Further, the present invention includes a plurality of semiconductor voxel element connected to each other, said the plurality of semiconductor voxel element, driving the application time duties of power voltage variable to a different DC voltage DC / a driving circuit by the DC converter, characterized by comprising a determining means for determining element that are shorted in the plurality of semiconductor voxel element based on the application time duty of above SL drive circuit .

また、本発明は、互いに接続された複数の半導体素子と、上記複数の半導体素子を駆動する駆動回路と、上記複数の半導体素子に対応付けて接続された複数の開閉スイッチ回路と、上記複数の半導体素子に接続され、当該半導体素子に印加される電圧に基づいて上記開閉スイッチ回路を開状態とする複数の電圧検出手段と、上記駆動回路により上記複数の半導体素子全体に印加される電圧の変化から上記複数の開閉スイッチ回路の少なくとも1つが開状態となったことを判定する判定手段とを具備したことを特徴とする。 Further, the present invention includes a plurality of semiconductor voxel element connected to each other, a drive circuit for driving the plurality of semiconductor voxel element, a plurality of which is connected in association with the plurality of semiconductor element and closing the switch circuits are connected to said plurality of semiconductor element, a plurality of voltage detection means for the opening and closing switch circuit in an open state based on the voltage applied to the semiconductor voxel element, the drive characterized by comprising a determining means that it is now at least 1 Hiraku Toga state of the plurality of opening and closing the switch circuit from the change in the voltage applied across said plurality of semiconductor voxel element by the circuit.

本発明によれば、できる限り簡素な回路構成としながらも、直列接続された半導体素子の異常を確実に検出することが可能となる。 According to the present invention, while a simple circuit configuration as much as possible, it is possible to reliably detect the abnormality of the series-connected semiconductor voxel element.

Claims (20)

互いに接続された複数の半導体素子と、
上記複数の半導体素子を駆動する駆動回路と、
上記複数の半導体素子に接続された複数の抵抗と、
上記複数の抵抗に印加される電圧値に基づいて上記複数の半導体素子中で短絡している素子を判定する判定手段と
を具備したことを特徴とする半導体装置。
A plurality of semiconductor voxel element connected to each other,
A drive circuit for driving the plurality of semiconductor voxel element,
A plurality of resistors connected to said plurality of semiconductor element,
Semiconductor KaradaSo location, characterized by comprising a determining means for determining element that are shorted in the plurality of semiconductor voxel element based on the voltage value applied to the plurality of resistors.
上記半導体装置は、さらに上記複数の抵抗に所定の電流を流す電流源を有することを特徴とする請求項1に記載の半導体装置。The semiconductor device according to claim 1, further comprising a current source for supplying a predetermined current to the plurality of resistors. 上記電流源は、上記駆動回路による上記複数の半導体素子の非駆動時に上記複数の抵抗に所定の電流を流すことを特徴とする請求項2に記載の半導体装置。The semiconductor device according to claim 2, wherein the current source causes a predetermined current to flow through the plurality of resistors when the plurality of semiconductor elements are not driven by the driving circuit. 上記電流源により所定の電流が上記複数の抵抗に印加される際に上記複数の半導体素子に印加される電圧値は上記複数の半導体素子の動作閾値電圧よりも小さくなるように、上記複数の抵抗の抵抗値と上記電流源の電流値とが設定されていることを特徴とする請求項1乃至請求項3の何れかに記載の半導体装置。When the predetermined current is applied to the plurality of resistors by the current source, the voltage value applied to the plurality of semiconductor elements is smaller than the operation threshold voltage of the plurality of semiconductor elements. 4. The semiconductor device according to claim 1, wherein a resistance value and a current value of the current source are set. 5. 上記半導体装置は、さらに、上記抵抗に印加される電圧を予め設定された比で分圧する分圧回路を備え、上記判定手段は、上記分圧回路で分圧された電圧値に基づいて上記複数の半導体素子中で短絡している素子を判定することを特徴とする請求項1に記載の半導体装置。 The semiconductor device further includes a voltage dividing circuit that divides a voltage applied to the resistor by a preset ratio, and the determination unit includes the plurality of voltage values based on the voltage value divided by the voltage dividing circuit. semiconductor KaradaSo location according to claim 1, wherein the determining element that are shorted in the semiconductor voxel element. 上記複数の抵抗は、上記複数の半導体素子にそれぞれ並列接続されていることを特徴とする請求項1乃至請求項5の何れかに記載の半導体装置。6. The semiconductor device according to claim 1, wherein the plurality of resistors are respectively connected in parallel to the plurality of semiconductor elements. 互いに接続された複数の半導体素子と、
上記複数の半導体素子に対し、電源の電圧の印加時間デューティを可変して異なる直流電圧で駆動するDC/DCコンバータによる駆動回路と、
記駆動回路での印加時間デューティに基づいて上記複数の半導体素子中で短絡している素子を判定する判定手段と
を具備したことを特徴とする半導体装置。
A plurality of semiconductor voxel element connected to each other,
Above the plurality of semiconductor voxel element, a driving circuit according to DC / DC converter to drive the application time duties of power voltage variable to a different DC voltage,
Semiconductor KaradaSo location, characterized in that on the basis of the application time duty of above SL drive circuit equipped with a judging means for judging element shorting in the plurality of semiconductor voxel element.
上記判定手段は、さらに上記電源の直流電圧値に基づいて上記複数の半導体素子中で短絡している素子を判定することを特徴とする請求項7に記載の半導体装置。The semiconductor device according to claim 7, wherein the determination unit further determines an element that is short-circuited among the plurality of semiconductor elements based on a DC voltage value of the power source. 上記複数の半導体素子の温度を検出する温度検出手段をさらに具備し、
上記判定手段は、上記温度検出手段での検出結果に基づいて、上記複数の半導体素子中で短絡している素子数の判定結果と、上記駆動回路による印加時間デューティの少なくとも一方を補正する
ことを特徴とする請求項7又は請求項8に記載の半導体装置。
Further comprising temperature detecting means for detecting a temperature of said plurality of semiconductor voxel element,
It said determination means, based on the detection result of the above temperature detecting means, correction and determination result of the number of elements is short-circuited, at least one of the application time duty by the drive circuit in the plurality of semiconductor voxel element semiconductor KaradaSo location according to claim 7 or claim 8, characterized in that.
互いに接続された複数の半導体素子と、
上記複数の半導体素子を駆動する駆動回路と、
上記複数の半導体素子に対応付けて接続された複数の開閉スイッチ回路と、
上記複数の半導体素子に接続され、当該半導体素子に印加される電圧に基づいて上記開閉スイッチ回路を開状態とする複数の電圧検出手段と、
上記駆動回路により上記複数の半導体素子全体に印加される電圧の変化から上記複数の開閉スイッチ回路の少なくとも1つが開状態となったことを判定する判定手段と
を具備したことを特徴とする半導体装置。
A plurality of semiconductor voxel element connected to each other,
A drive circuit for driving the plurality of semiconductor voxel element,
A plurality of opening and closing the switch circuits connected in association to the plurality of semiconductor element,
Is connected to the plurality of semiconductor element, a plurality of voltage detection means for the opening and closing switch circuit in an open state based on the voltage applied to the semiconductor voxel element,
And characterized by including a determination means that it is now at least 1 Hiraku Toga state of the plurality of opening and closing the switch circuit from the change in the voltage applied across said plurality of semiconductor voxel element by the driving circuit semiconductor KaradaSo location to be.
互いに接続された複数の半導体光源素子と、A plurality of semiconductor light source elements connected to each other;
上記複数の半導体光源素子を駆動する駆動回路と、A drive circuit for driving the plurality of semiconductor light source elements;
上記複数の半導体光源素子に接続された複数の抵抗と、A plurality of resistors connected to the plurality of semiconductor light source elements;
上記複数の抵抗に印加される電圧値に基づいて上記複数の半導体光源素子中で短絡している素子を判定する判定手段とDetermining means for determining a short-circuited element among the plurality of semiconductor light source elements based on voltage values applied to the plurality of resistors;
を具備したことを特徴とする半導体光源装置。A semiconductor light source device comprising:
上記複数の抵抗に印加される電圧を予め設定された比で分圧する分圧回路を備え、A voltage dividing circuit for dividing the voltage applied to the plurality of resistors by a preset ratio;
上記判定手段は、上記分圧回路により分圧された電圧値に基づいて上記複数の半導体素子中で短絡している素子を判定することを特徴とする請求項11に記載の半導体光源装置。The semiconductor light source device according to claim 11, wherein the determination unit determines an element that is short-circuited in the plurality of semiconductor elements based on a voltage value divided by the voltage dividing circuit.
互いに接続された複数の半導体光源素子と、A plurality of semiconductor light source elements connected to each other;
上記複数の半導体光源素子に対し、電源の電圧の印加時間デューティを可変して異なる直流電圧で駆動するDC/DCコンバータによる駆動回路と、A driving circuit by a DC / DC converter for driving the plurality of semiconductor light source elements with different direct current voltages by varying the application time duty of the power supply voltage;
上記駆動回路での印加時間デューティに基づいて上記複数の半導体光源素子中で短絡している素子を判定する判定手段とDetermining means for determining a short-circuited element among the plurality of semiconductor light source elements based on an application time duty in the drive circuit;
を具備したことを特徴とする半導体光源装置。A semiconductor light source device comprising:
互いに接続された複数の半導体光源素子と、A plurality of semiconductor light source elements connected to each other;
上記複数の半導体光源素子を駆動する駆動回路と、A drive circuit for driving the plurality of semiconductor light source elements;
上記複数の半導体光源素子に対応付けて接続された複数の開閉スイッチ回路と、A plurality of open / close switch circuits connected in association with the plurality of semiconductor light source elements;
上記複数の半導体光源素子に接続され、当該半導体光源素子に印加される電圧に基づいて上記開閉スイッチ回路を開状態とする複数の電圧検出手段と、A plurality of voltage detecting means connected to the plurality of semiconductor light source elements and opening the open / close switch circuit based on a voltage applied to the semiconductor light source elements;
上記駆動回路により上記複数の半導体光源素子全体に印加される電圧の変化から上記複数の開閉スイッチ回路の少なくとも1つが開状態となったことを判定する判定手段とDetermining means for determining that at least one of the plurality of open / close switch circuits is in an open state from a change in voltage applied to the whole of the plurality of semiconductor light source elements by the drive circuit;
を具備したことを特徴とする半導体光源装置。A semiconductor light source device comprising:
互いに接続された複数の半導体素子、及び上記複数の半導体素子を駆動する駆動回路を備えた半導体装置の制御方法であって、
上記複数の半導体素子に複数の抵抗を接続し、
上記複数の抵抗に印加される電圧値に基づいて上記複数の半導体素子中で短絡している素子を判定する
ことを特徴とする半導体装置の制御方法。
Mutually connected plural semiconductor voxel element, and a semiconductive KaradaSo location control method including a driving circuit for driving the plurality of semiconductor voxel element,
A plurality of resistors connect to the plurality of semiconductor voxel element,
A method for controlling a semiconductor device, comprising: determining a short-circuited element among the plurality of semiconductor elements based on voltage values applied to the plurality of resistors .
記複数の抵抗に印加される電圧を予め設定された比で分圧し、
上記分圧された電圧値に基づいて上記複数の半導体素子中で短絡している素子を判定することを特徴とする請求項15に記載の半導体装置の制御方法。
Dividing ratio which is set a voltage applied to the upper Symbol plurality of resistors in advance,
Control method of a semiconductor device according to claim 15, wherein the determining device is based on the voltage divided by value by short-circuit in said plurality of semiconductor voxel element.
互いに接続された複数の半導体素子、及び上記複数の半導体素子に対し、電源の直流電圧の印加時間デューティを可変して異なる電圧で駆動するDC/DCコンバータによる駆動回路を備えた半導体装置の制御方法であって、
記駆動回路での印加時間デューティに基づいて上記複数の半導体素子中で短絡している素子を判定することを特徴とする半導体装置の制御方法。
Mutually connected plural semiconductor voxel element, and the plurality of relative semiconductor voxel element, is driven by a variable to different that voltage application time duty of the DC voltage of the power supply DC / DC converter by the drive circuit a semiconductor KaradaSo location control method having a
Control method of a semiconductor device and judging on the SL element shorting based on the application time duty of the driving circuit in the plurality of semiconductor voxel element.
互いに接続された複数の半導体素子、及び上記複数の半導体素子を駆動する駆動回路を備えた半導体装置の制御方法であって、
上記複数の半導体素子に対応付けて複数の開閉スイッチ回路を接続し、
上記複数の半導体素子それぞれに、当該半導体素子に印加される電圧から素子の短絡を検出し、その検出結果により当該半導体素に接続された開閉スイッチ回路を開状態とする複数の電圧検出手段を接続し、
上記駆動回路により上記複数の半導体素子全体に印加される電圧の変化から上記複数の開閉スイッチ回路の少なくとも1つが開状態となったことを判定する
ことを特徴とする半導体装置の制御方法。
Mutually connected plural semiconductor voxel element, and a semiconductive KaradaSo location control method including a driving circuit for driving the plurality of semiconductor voxel element,
Connect the off switch circuit multiple in association with the plurality of semiconductor element,
Each of the plurality of semiconductor voxel element, the semiconductor voxel shorting element detected from the voltage applied to the element, the opening and closing switch circuit is connected to the semiconductor voxel element open by the detection result a plurality of voltage detection means for the state connect,
Control method of a semiconductor device and judging that it is now at least 1 Hiraku Toga state of the plurality of opening and closing the switch circuit from the change in the voltage applied across said plurality of semiconductor voxel element by the driving circuit .
複数の半導体光源素子を互いに接続した半導体光源素子アレイを複数設け、それぞれ異なる色の光を発する上記各半導体光源素子アレイを時分割で発光駆動する光源と、
画像信号を入力する入力手段と、
上記入力手段で入力された画像信号に基づいて表示素子により画像を表示させ、上記光源から時分割で入光される複数色の光を上記表示素子で反射あるいは透過させてカラーの光像を形成し、投影対象に向けて投影する投影手段と、
上記各半導体光源素子アレイを構成する半導体光源素子に接続した複数の抵抗と、
上記複数の抵抗に印加される電圧値に基づいて上記各半導体光源素子アレイ中で短絡している素子を判定する複数の判定手段と、
上記複数の判定手段での判定結果に応じて上記光源及び上記投影手段の少なくとも一方の動作を調整する投影制御手段と
を具備したことを特徴とする投影装置。
A plurality of semiconductor light source element arrays in which a plurality of semiconductor light source elements are connected to each other , a light source that emits light in a time-sharing manner for each of the semiconductor light source element arrays that emit light of different colors
An input means for inputting an image signal;
An image is displayed on the display element based on the image signal input by the input means, and a color light image is formed by reflecting or transmitting the light of a plurality of colors received in a time division manner from the light source by the display element. Projection means for projecting toward the projection target;
A plurality of resistors connect the semi-conductor light source elements that make up each of the above-mentioned semiconductor light source element arrays,
A plurality of determining means for determining element that are shorted in the respective semiconductor light source element array based on a voltage value applied to the plurality of resistors,
A projection apparatus comprising: a projection control unit that adjusts an operation of at least one of the light source and the projection unit according to determination results of the plurality of determination units.
複数の半導体光源素子を互いに接続した半導体光源素子アレイを複数設け、それぞれ異なる色の光を発する上記各半導体光源素子アレイに対し、電源の直流電圧の印加時間デューティを可変して異なる直流電圧で時分割で駆動する光源と、
画像信号を入力する入力手段と、
上記入力手段で入力された画像信号に基づいて表示素子により画像を表示させ、上記光源から時分割で入光される複数色の光を上記表示素子で反射あるいは透過させてカラーの光像を形成し、投影対象に向けて投影する投影手段と、
上記各半導体光源素子アレイ毎に設けられ、上記印加時間デューティに基づいて上記各半導体光源素子アレイ中で短絡している素子を判定する複数の判定手段と、
上記複数の判定手段での判定結果に応じて上記光源及び上記投影手段の少なくとも一方の動作を調整する投影制御手段と
を具備したことを特徴とする投影装置。
A plurality of semiconductor light source element arrays in which a plurality of semiconductor light source elements are connected to each other are provided, and for each of the semiconductor light source element arrays that emit light of different colors, the application time duty of the DC voltage of the power source is varied to vary the time. A light source that is driven in splits;
An input means for inputting an image signal;
An image is displayed on the display element based on the image signal input by the input means, and a color light image is formed by reflecting or transmitting the light of a plurality of colors received in a time division manner from the light source by the display element. Projection means for projecting toward the projection target;
Provided for each of the respective semiconductor light source element arrays, a plurality of determination means for determining an element is short-circuited in the respective semiconductor light source element arrays based on SL application time duty,
A projection apparatus comprising: a projection control unit that adjusts an operation of at least one of the light source and the projection unit according to determination results of the plurality of determination units.
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