JP2012227434A - High-frequency package - Google Patents

High-frequency package Download PDF

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JP2012227434A
JP2012227434A JP2011095317A JP2011095317A JP2012227434A JP 2012227434 A JP2012227434 A JP 2012227434A JP 2011095317 A JP2011095317 A JP 2011095317A JP 2011095317 A JP2011095317 A JP 2011095317A JP 2012227434 A JP2012227434 A JP 2012227434A
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multilayer substrate
metal lid
vent hole
semiconductor device
substrate
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Kosuke Yasooka
興祐 八十岡
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

PROBLEM TO BE SOLVED: To obtain a high-frequency package which reduces leakage of a high-frequency signal from a vent hole.SOLUTION: There is provided a high-frequency package comprising: a multilayer substrate 1 formed by stacking a plurality of dielectric substrates; a semiconductor device mounted on the multilayer substrate 1; a metal lid 3 bonded to the multilayer substrate 1 so as to surround a mount region of the semiconductor device in an approximately circular pattern, to form a cavity between the metal lid 3 and the multilayer substrate 1; solder 4 which bonds the multilayer substrate 1 and the metal lid 3; a vent hole 5 formed between the multilayer substrate 1 and the metal lid 3 by the solder 4 which is broken and configured to let an inside and an outside of the cavity be communicated with each other; and a suppression waveguide tube having a length equal to a natural-number multiple of approximately 1/2 of an in-substrate effective wavelength of a signal wave output from the semiconductor device, formed in the multilayer substrate 1, including an opening exposed over the vent hole 5 in a bonding portion to the metal lid 3, and including a short-circuited tip.

Description

本発明は、高周波パッケージに関する。   The present invention relates to a high frequency package.

従来、電波を送出する高周波発振部が搭載された基板に、高周波発振部を取り囲むように環状パターンを形成して、環状パターン上に盛られた半田にて蓋体を基板に接合することにより、高周波発振部を蓋体にて封止する構造の高周波パッケージが知られている(たとえば、特許文献1参照)。   Conventionally, by forming an annular pattern so as to surround the high-frequency oscillation unit on the substrate on which the high-frequency oscillation unit for transmitting radio waves is mounted, by joining the lid to the substrate with solder stacked on the annular pattern, A high-frequency package having a structure in which a high-frequency oscillation unit is sealed with a lid is known (for example, see Patent Document 1).

上記のような構造の高周波パッケージにおいて、高周波発振部が収納された内部空間を気密とせず非気密の空間とする場合がある。高周波パッケージを非気密とする場合、結露防止の目的で電波の漏れない微少な通気穴を設ける必要がある。従来、この通気穴を基板と蓋体を接合する半田に形成する方法が提案されている。この方法によれば、例えば、環状パターンの1箇所を分断して、局所的にパターンのない空隙部を形成する。これにより、この空隙部には半田が載らないので、基板と蓋体を接合して封止する半田の一部に微少な通気穴を容易に形成することができる。   In the high-frequency package having the above-described structure, the internal space in which the high-frequency oscillation unit is housed may be a non-airtight space without being airtight. When making a high-frequency package non-hermetic, it is necessary to provide minute ventilation holes that do not leak radio waves for the purpose of preventing condensation. Conventionally, a method has been proposed in which the vent hole is formed in solder for joining the substrate and the lid. According to this method, for example, one portion of the annular pattern is divided to form a void portion without a pattern locally. As a result, no solder is placed in the gap, so that a small ventilation hole can be easily formed in a part of the solder that joins and seals the substrate and the lid.

車載ミリ波レーダなどは、ミリ波帯の電磁波を使用し、前方の車両との距離、相対速度の検知によって、クルーズコントロールや衝突不可避時のドライバーへの被害軽減などの安全性対策に適用されている。このような車載ミリ波レーダでは、送信信号を得るために、低い周波数から逓倍する方式が多いが、この場合、多くの周波数成分がモジュール内に存在するため、海外のEMI規格(FCC等)を満足するのが非常に困難となっている。   In-vehicle millimeter wave radars, etc. are applied to safety measures such as cruise control and mitigation of damage to drivers when collisions are unavoidable by detecting distance to the vehicle ahead and relative speed using millimeter wave electromagnetic waves. Yes. In such an in-vehicle millimeter wave radar, there are many methods of multiplying from a low frequency in order to obtain a transmission signal. In this case, since many frequency components exist in the module, the overseas EMI standards (FCC, etc.) It has become very difficult to be satisfied.

車載ミリ波レーダにおいて、レーダモジュールは、通常、レーダ装置用の高周波デバイスが搭載された高周波パッケージ、この高周波パッケージにバイアス信号および制御信号を供給する制御/インタフェース基板、および導波管プレートなどを備えて構成されるが、上記のEMI規格を満足させるために、従来は、レーダモジュール全体を金属カバーで覆うよう構成することが多い。   In an in-vehicle millimeter-wave radar, a radar module usually includes a high-frequency package on which a high-frequency device for a radar apparatus is mounted, a control / interface board that supplies a bias signal and a control signal to the high-frequency package, a waveguide plate, and the like. However, in order to satisfy the above EMI standard, conventionally, the entire radar module is often covered with a metal cover.

特開2010−278152号公報JP 2010-278152 A

しかしながら、上記基板と蓋体を接合する半田に通気穴を形成する方法においては、半田塗布量のばらつきにより半田フィレットが適切な形状に成形できず、通気穴の大きさが大きくなってしまうことがあった。そのため、従来は半田量の塗布量を厳しく管理して、通気穴が大きくならないようにしているが、製造ばらつきにより、どうしても通気穴の幅が大きくなってしまうものもできてしまう。そして、通気穴の大きさが所定以上に大きいと、高周波パッケージ内部の高周波信号が外部に漏れてしまい、EMI特性の劣化やシステム上のノイズが増えてしまうという問題があった。   However, in the method of forming a vent hole in the solder for joining the substrate and the lid, the solder fillet cannot be formed into an appropriate shape due to variations in the amount of solder applied, resulting in an increase in the size of the vent hole. there were. For this reason, conventionally, the amount of solder applied is strictly controlled so that the vent hole does not become large. However, due to manufacturing variations, there are cases where the width of the vent hole inevitably increases. If the size of the vent hole is larger than a predetermined value, a high-frequency signal inside the high-frequency package leaks to the outside, and there is a problem that EMI characteristics deteriorate and system noise increases.

本発明は、上記に鑑みてなされたものであって、通気穴からの高周波信号の漏れを低減した高周波パッケージを得ることを目的とする。   The present invention has been made in view of the above, and an object thereof is to obtain a high-frequency package in which leakage of a high-frequency signal from a vent hole is reduced.

上述した課題を解決し、目的を達成するために、本発明は、誘電体基板を複数積層した多層基板と、多層基板に実装された半導体デバイスと、半導体デバイスの実装領域を略環状に囲うように多層基板に接合されて、多層基板との間にキャビティを形成する金属蓋と、多層基板と前記金属蓋とを接合するはんだ層と、はんだ層が途切れていることによって多層基板と金属蓋との間に形成されて、キャビティの内外を連通する通気穴と、半導体デバイスが出力する信号波の基板内実効波長の略1/2の自然数倍の長さを有して多層基板内に形成され、開口部が金属蓋との接合部において通気穴をまたいで露出し、先端が短絡された抑圧用導波管と、を備えることを特徴とする。   In order to solve the above-described problems and achieve the object, the present invention surrounds a multilayer substrate in which a plurality of dielectric substrates are stacked, a semiconductor device mounted on the multilayer substrate, and a mounting region of the semiconductor device in a substantially annular shape. A metal lid that is bonded to the multilayer substrate and forms a cavity between the multilayer substrate, a solder layer that joins the multilayer substrate and the metal lid, and the multilayer substrate and the metal lid due to the disconnection of the solder layer. Is formed in the multilayer substrate with a vent hole communicating between the inside and outside of the cavity and a length that is a natural number times approximately half of the effective wavelength in the substrate of the signal wave output from the semiconductor device. And a suppression waveguide having an opening exposed across the ventilation hole at the joint with the metal lid and having a short-circuited tip.

本発明によれば、通気穴の幅が広くなった場合でも、通気穴からの高周波信号の漏れを抑制できるという効果を奏する。   According to the present invention, even when the width of the vent hole is widened, there is an effect that leakage of high-frequency signals from the vent hole can be suppressed.

図1は、本発明にかかる高周波パッケージの実施の形態の構成を示す断面図である。FIG. 1 is a cross-sectional view showing a configuration of an embodiment of a high-frequency package according to the present invention. 図2は、通気穴部分の導体パターンの上面図である。FIG. 2 is a top view of the conductor pattern of the vent hole portion. 図3は、図1におけるIII−III断面図である。3 is a cross-sectional view taken along the line III-III in FIG.

以下に、本発明にかかる高周波パッケージの実施の形態を図面に基づいて詳細に説明する。なお、この実施の形態によりこの発明が限定されるものではない。   Embodiments of a high-frequency package according to the present invention will be described below in detail with reference to the drawings. Note that the present invention is not limited to the embodiments.

実施の形態.
図1は、本発明にかかる高周波パッケージの実施の形態の構成を示す断面図であり、通気穴部分を示している。図2は、通気穴部分の導体パターンの上面図である。図3は、図1におけるIII−III断面図であり、通気穴部分を横方向からの視点で示している。
Embodiment.
FIG. 1 is a cross-sectional view showing a configuration of an embodiment of a high-frequency package according to the present invention, and shows a vent hole portion. FIG. 2 is a top view of the conductor pattern of the vent hole portion. FIG. 3 is a cross-sectional view taken along the line III-III in FIG. 1 and shows the vent hole portion from a lateral viewpoint.

誘電体基板を複数積層して構成され、半導体デバイスが実装された多層基板1には接地された導体パターン2が設けられており、導体パターン2と金属蓋3とは、はんだ4を介して接合されている。金属蓋3が導体パターン2を介してはんだ4で多層基板1に固定されることで、金属蓋3と多層基板1との間に半導体デバイスを収容するキャビティが形成されている。導体パターン2は、半導体デバイスの実装領域を略環状に囲っていて、導体が無い部分が1カ所あり、それによって通気穴5が形成されている。通気穴5の幅は、λ/2よりも十分狭くなっており、通気穴5を介しての高周波信号の漏洩は防止されている。なお、“λ”は、漏洩防止の対象とする高周波信号(多層基板1に実装された半導体デバイスから出力される信号など)の中心周波数f0での波長を表している。   A multi-layer substrate 1 configured by laminating a plurality of dielectric substrates and having a semiconductor device mounted thereon is provided with a grounded conductor pattern 2, and the conductor pattern 2 and the metal lid 3 are joined via a solder 4. Has been. The metal lid 3 is fixed to the multilayer substrate 1 with the solder 4 via the conductor pattern 2, so that a cavity for housing a semiconductor device is formed between the metal lid 3 and the multilayer substrate 1. The conductor pattern 2 surrounds the mounting area of the semiconductor device in a substantially annular shape, and has one portion without a conductor, thereby forming a vent hole 5. The width of the vent hole 5 is sufficiently narrower than λ / 2, and leakage of high frequency signals through the vent hole 5 is prevented. Note that “λ” represents the wavelength at the center frequency f0 of a high-frequency signal (such as a signal output from a semiconductor device mounted on the multilayer substrate 1) to be leaked.

多層基板1は、グランドヴィア7a、7b及び多層基板1内部の内層接地導体1aと、その内部に充填された誘電体とで構成された抑圧用導波管を備えている。抑圧用導波管開口部6は、多層基板1と金属蓋3との接合領域である導体パターン2内に、通気穴5をまたぐように設けられている。すなわち、導体パターン2には、抑圧用導波管の導波管開口部6のために導体が存在しない部分が設けられている。抑圧用導波管開口部6の幅は、λ/2以上となっており、漏洩防止の対象とする高周波信号にとっては導波管になっている。   The multilayer substrate 1 includes a suppression waveguide constituted by ground vias 7a and 7b, an inner layer ground conductor 1a inside the multilayer substrate 1, and a dielectric filled therein. The suppression waveguide opening 6 is provided so as to straddle the vent hole 5 in the conductor pattern 2, which is a joint region between the multilayer substrate 1 and the metal lid 3. That is, the conductor pattern 2 is provided with a portion where no conductor exists because of the waveguide opening 6 of the suppression waveguide. The width of the suppression waveguide opening 6 is λ / 2 or more, and is a waveguide for a high-frequency signal to be prevented from leaking.

抑圧用導波管は、導波管開口部6から導波管の奥端のグランドヴィア7bまでの距離がλ/2となっており、抑圧用導波管開口部6を短絡して、通気穴5を通る高周波信号の漏れ量を低減している。すなわち、抑圧用導波管は通気穴5の内部で枝分かれすることによってショートスタブとなっており、抑圧用導波管の長さがλ/2であることにより導波管開口部6での抑圧用導波管の入力インピーダンスは“0”となっている。よって、通気穴5を通過して外部へ漏れ出ようとする高周波信号は、分岐点である導波管開口部6の部分で一部が反射されパッケージ内へ戻る。このように、抑圧用導波管は、BEF(Band Elimination Filter)として機能し、周波数f0を含む帯域の電磁波が通気穴5を通過することを阻止する。   In the suppression waveguide, the distance from the waveguide opening 6 to the ground via 7b at the back end of the waveguide is λ / 2, and the suppression waveguide opening 6 is short-circuited to vent. The leakage amount of the high frequency signal passing through the hole 5 is reduced. That is, the suppression waveguide becomes a short stub by branching inside the vent hole 5, and the length of the suppression waveguide is λ / 2, so that the suppression at the waveguide opening 6 is suppressed. The input impedance of the waveguide for use is “0”. Therefore, a part of the high-frequency signal that passes through the vent hole 5 and leaks to the outside is reflected by the portion of the waveguide opening 6 that is a branch point and returns to the package. In this way, the suppression waveguide functions as a BEF (Band Elimination Filter) and prevents electromagnetic waves in a band including the frequency f0 from passing through the vent hole 5.

以上のように、金属蓋3を搭載する導体パターン2に、外部へ漏れを抑圧する導波管開口部6を設け、この導波管開口部から回路基板1の内部にλ/2長の抑圧用導波管を構成する。この構成を設けることにより、通気穴5を通って漏れる高周波信号に関しては、導波管開口部6において短絡点となり、外部への漏れ量が低減する。したがって、製造ばらつきによりはんだ4の量が少なくなって通気穴5の幅が広がってしまった場合でも、高周波信号はキャビティの外へ漏れにくい。これにより、高周波パッケージの製品歩留まりを向上させることができる。   As described above, the conductor pattern 2 on which the metal lid 3 is mounted is provided with the waveguide opening 6 for suppressing leakage to the outside, and the λ / 2 length is suppressed from the waveguide opening to the inside of the circuit board 1. A waveguide is formed. By providing this configuration, a high-frequency signal leaking through the vent hole 5 becomes a short circuit point in the waveguide opening 6 and the amount of leakage to the outside is reduced. Therefore, even when the amount of the solder 4 is reduced due to manufacturing variations and the width of the vent hole 5 is widened, the high-frequency signal hardly leaks out of the cavity. Thereby, the product yield of a high frequency package can be improved.

多層基板1の製造プロセスにおいて、グランドヴィア7a、7b、内層接地導体1aを作り込めるため、二次的な組立作業は不要であり、製造工程の簡素化や装置の低コスト化が可能となる。   In the manufacturing process of the multilayer substrate 1, since the ground vias 7a and 7b and the inner layer ground conductor 1a can be formed, secondary assembly work is unnecessary, and the manufacturing process can be simplified and the cost of the apparatus can be reduced.

抑圧用導波管は、抑圧用導波管開口部6と、多層基板1内部の内層接地導体1aと、グランドヴィア7a、7bとで構成され、途中で多層基板1の平面方向に曲がっているため、厚さがλ/2に満たない多層基板1でも形成可能である。すなわち、多層基板1の薄型化を実現できる。   The suppression waveguide is composed of a suppression waveguide opening 6, an inner layer ground conductor 1 a inside the multilayer substrate 1, and ground vias 7 a and 7 b, and is bent in the plane direction of the multilayer substrate 1 in the middle. Therefore, even the multilayer substrate 1 having a thickness less than λ / 2 can be formed. That is, the multilayer substrate 1 can be thinned.

なお、ここでは導波管開口部6からグランドヴィア7bまでの距離がλ/2である場合を例としたが、λ/2の整数倍であっても同様の効果が得られる。また、ここでは抑圧用導波管が途中で多層基板1の層方向に曲がっている構成を例として説明したが、多層基板1が厚い場合には、抑圧用導波管を曲げずに積層方向に延ばしても良い。この場合には、抑圧用導波管の端部は内層接地導体によって短絡端とすればよい。   Although the case where the distance from the waveguide opening 6 to the ground via 7b is λ / 2 is taken as an example here, the same effect can be obtained even when the distance is an integral multiple of λ / 2. Further, here, the configuration in which the suppression waveguide is bent in the layer direction of the multilayer substrate 1 has been described as an example, but when the multilayer substrate 1 is thick, the suppression waveguide is not bent and the stacking direction is It may be extended to In this case, the end portion of the suppression waveguide may be a short-circuit end by the inner layer ground conductor.

1 多層基板
1a 内層接地導体
2 導体パターン
3 金属蓋
4 はんだ
5 通気穴
6 導波管開口部
7a、7b グランドヴィア
DESCRIPTION OF SYMBOLS 1 Multilayer substrate 1a Inner-layer grounding conductor 2 Conductor pattern 3 Metal lid 4 Solder 5 Vent hole 6 Waveguide opening 7a, 7b Ground via

Claims (2)

誘電体基板を複数積層した多層基板と、
前記多層基板に実装された半導体デバイスと、
前記半導体デバイスの実装領域を略環状に囲うように前記多層基板に接合されて、該多層基板との間にキャビティを形成する金属蓋と、
前記多層基板と前記金属蓋とを接合するはんだ層と、
前記はんだ層が途切れていることによって前記多層基板と前記金属蓋との間に形成されて、前記キャビティの内外を連通する通気穴と、
前記半導体デバイスが出力する信号波の基板内実効波長の略1/2の自然数倍の長さを有して前記多層基板内に形成され、開口部が前記金属蓋との接合部において前記通気穴をまたいで露出し、先端が短絡された抑圧用導波管と、
を備えることを特徴とする高周波パッケージ。
A multilayer substrate in which a plurality of dielectric substrates are laminated;
A semiconductor device mounted on the multilayer substrate;
A metal lid that is bonded to the multilayer substrate so as to surround the mounting region of the semiconductor device in a substantially annular shape and forms a cavity between the multilayer substrate;
A solder layer for joining the multilayer substrate and the metal lid;
A vent hole formed between the multilayer substrate and the metal lid by disconnecting the solder layer, and communicating between the inside and outside of the cavity;
A signal wave output from the semiconductor device is formed in the multilayer substrate having a length that is a natural number multiple of approximately ½ of the effective wavelength in the substrate, and an opening is formed at the junction with the metal lid. A suppression waveguide that is exposed across the hole and whose tip is short-circuited;
A high-frequency package comprising:
前記抑圧用導波管は、内層接地導体と、複数のグランドヴィアと、前記内層接地導体及び前記複数のグランドビアの内部に充填された誘電体とを有することを特徴とする請求項1記載の高周波パッケージ。   2. The suppression waveguide includes an inner layer ground conductor, a plurality of ground vias, and a dielectric filled in the inner layer ground conductor and the plurality of ground vias. High frequency package.
JP2011095317A 2011-04-21 2011-04-21 High-frequency package Withdrawn JP2012227434A (en)

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