JP2012218330A - Transfer sheet including transparent conductive film containing graphene as main component, and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a transfer sheet excellent in mass-productivity, and a method of manufacturing the same.SOLUTION: The transfer sheet 1 includes: a base sheet 2 having smoothness; a metal thin film layer 3 formed on the partial or entire base sheet so as to reflect the smoothness of the base sheet; the transparent conductive film layer 4 formed on the metal thin film layer and containing the graphene as the main component; and a routing circuit pattern layer 5 formed on a part of the transparent conductive film layer.

Description

  The present invention relates to a transfer sheet having a transparent conductive film layer, and more particularly to a transfer sheet provided with a transparent conductive film containing graphene as a main component as a transparent conductive film layer and a method for producing the same.

  In communication devices such as mobile phones, electronic information devices, liquid crystal displays, solar cells, and the like, a transparent conductive film excellent in transparency and conductivity is required.

  Indium tin oxide (ITO) is mainly used for the transparent conductive material of the transparent conductive film. However, since ITO contains indium, which is a rare earth, alternative materials have been studied in terms of stable supply, environmental load, and the like.

  Carbon nanotubes (CNT), metal nanowires and the like are listed as candidates for ITO substitute materials. One of them is Graphene. Graphene is a two-dimensional material having a honeycomb structure in which carbon atoms are bonded to three adjacent carbon atoms. 2004, A.M. Geim and K.M. A lot of research has been done since Novoselov first isolated by mechanical exfoliation of highly oriented graphite with adhesive tape and experimentally proved the unique properties of graphene that were theoretically predicted so far (e.g. Patent Document 1).

  The graphene film is formed by winding a sheet-like Cu substrate (thickness 15 μm, 25 μm) as a catalyst around a cylindrical reactor and depositing the film on the Cu substrate by chemical vapor deposition (CVD) at 1000 ° C. It took many steps such as pasting with a long substrate capable of roll-to-roll method and removing the Cu substrate by etching (for example, Non-Patent Document 2). As a result, there is a problem that the cost is increased and the generated graphene film is damaged such as wrinkles and tears, and the quality of the graphene is deteriorated. In addition, there has been no production method for forming a graphene film on a substrate by consistent roll-to-roll.

K. S. Novoselov, A.M. K. Geim et al. , Science, 306, 666 (2004). S. Bae et al. , Nature Nanotech. 5,574 (2010)

  The present invention has been made to solve the above problems, and an object thereof is to provide a transfer sheet for producing a transparent conductive film using graphene as a conductive material by a roll-to-roll method and a method for producing the same.

  In order to achieve the above object, the inventor has intensively studied. As a result, the transfer sheet for producing a transparent conductive film using graphene as a conductive material reflects the smoothness of the base sheet on the smooth base sheet. A thin metal film layer was formed, and a transparent conductive film layer containing graphene as a main component was formed thereon.

  A first aspect of the present invention includes a base sheet having smoothness, a metal thin film layer partially or entirely formed on the base sheet so as to reflect the smoothness of the base sheet, and the metal thin film layer. A transfer sheet comprising a transparent conductive film layer formed mainly on graphene and a routing circuit pattern layer formed on the transparent conductive film layer.

  According to a second aspect of the present invention, there is provided a substrate sheet having smoothness, a routing circuit pattern layer partially formed on the substrate sheet, the routing circuit pattern layer, and a routing circuit on the substrate sheet. A metal thin film layer partially or wholly formed so as to reflect the smoothness of the base sheet in a region where no film is formed, and a transparent conductive film mainly formed of graphene formed on the metal thin film layer A transfer sheet comprising a layer and a routing circuit pattern layer formed on the transparent conductive film layer.

  According to a third aspect of the present invention, there is provided a base sheet having smoothness, a metal thin film layer partially formed on the base sheet to reflect the smoothness of the base sheet, and the metal thin film layer. A transparent conductive film layer formed as a main component of graphene, and continuous from the end of the transparent conductive film layer to the base sheet so as to follow the end face shape of the transparent conductive film layer and the metal thin film layer And a routing circuit pattern layer that is formed automatically.

  According to a fourth aspect of the present invention, there is provided a base sheet having smoothness, a metal thin film layer partially formed on the base sheet so as to reflect the smoothness of the base sheet, and the metal thin film layer. A partially formed transparent conductive film layer mainly composed of graphene and continuous from the end of the transparent conductive film layer to the metal thin film layer so as to follow the end face shape of the transparent conductive film layer And a routing circuit pattern layer formed on the transfer sheet.

  According to a fifth aspect of the present invention, there is provided a base sheet having smoothness, a metal thin film layer partially or entirely formed on the base sheet so as to reflect the smoothness of the base sheet, and the metal thin film layer. A transfer sheet comprising a routing circuit pattern layer formed in a part and a transparent conductive film layer mainly composed of graphene formed on the metal thin film layer so as to be juxtaposed with the routing circuit pattern layer.

  A sixth aspect of the present invention is the transfer sheet, wherein the metal thin film layer has a thickness of 0.01 to 1 μm.

  A seventh aspect of the present invention is a transfer sheet having an arithmetic average roughness (Ra) of the substrate sheet surface of 20 nm or less.

  The eighth aspect of the present invention is a transfer sheet comprising a release layer on the base sheet.

  A ninth aspect of the present invention is a transfer sheet comprising an adhesive layer on the metal thin film layer.

  According to a tenth aspect of the present invention, there is provided a step of patterning a mask layer on a portion of a substrate sheet having smoothness, and a circuit pattern layer is formed around a portion of the substrate sheet where the mask layer is not formed. A step of forming a metal thin film layer in a region where the mask layer and the routing circuit pattern layer of the base sheet are not formed, and a part of the metal thin film layer formed on the mask layer. A step of peeling and removing and partially forming a metal thin film layer on the substrate sheet, and a transparent conductive film layer mainly composed of graphene on the partially formed metal thin film layer and the routing circuit pattern layer And a step of forming a transfer sheet.

  The eleventh aspect of the present invention includes a step of forming a routing circuit pattern layer on a part of a substrate sheet having smoothness, a region on the substrate sheet where the routing circuit pattern layer is not formed, and the routing circuit pattern layer. Or a step of partially forming a mask layer only in a region where the routing circuit pattern layer is not formed on the base sheet, and the mask layer and the routing circuit pattern layer on the base sheet are formed. A step of forming a metal thin film layer on the non-region, the mask layer, and the routing circuit pattern layer, and removing the mask layer together with a part of the metal thin film layer formed thereon, A step of partially forming a metal thin film layer on the base sheet; and graphene on the partially formed metal thin film layer and the transparent conductive film layer. A method for producing a transfer sheet and forming a transparent conductive film layer and minutes.

  A twelfth aspect of the present invention includes a step of partially forming a mask layer on a substrate sheet having smoothness, a region on the substrate sheet where the mask layer is not formed, and a metal thin film layer on the mask layer. Forming a circuit pattern layer on a region of the base sheet on which the metal thin film layer is formed without forming the mask layer, and forming a metal thin film layer on which the mask layer is formed. And a step of forming the metal thin film layer partially on the base sheet, and forming graphene as a main component on the partially formed metal thin film layer and the transparent conductive film. And a step of forming a transparent conductive film layer.

  A thirteenth aspect of the present invention includes a step of partially forming a mask layer on a base sheet having smoothness, a region on the base sheet where the mask layer is not formed, and a metal thin film on the mask layer. Forming a layer, peeling and removing the mask layer together with a part of the metal thin film layer formed thereon, and partially forming the metal thin film layer on the base sheet; A method for producing a transfer sheet, comprising: forming a transparent conductive film layer mainly composed of graphene on the metal thin film layer; and forming a circuit pattern layer by drawing around the transparent conductive film layer.

  A fourteenth aspect of the present invention includes a step of partially forming a mask layer on a base sheet having smoothness, a region where the mask layer is not formed on the base sheet, and a metal thin film layer on the mask layer. Forming, removing the mask layer together with a part of the metal thin film layer formed thereon, partially forming the metal thin film layer on the base sheet, and on the base sheet Forming a circuit pattern layer around the metal thin film layer partially formed on the region where the peeled and removed mask layer is formed, or on the region and the substrate sheet; and on the substrate sheet Forming a transparent conductive film layer containing graphene as a main component in a portion of the metal thin film layer partially formed on the substrate and where the routing circuit pattern layer is not formed. It is a method.

  A fifteenth aspect of the present invention includes a step of partially forming a circuit pattern layer on a base sheet having smoothness, a region of the base sheet where the circuit pattern layer is not formed, and the circuit pattern layer A step of forming a metal thin film layer on the substrate, a step of forming a resist layer on a portion of the metal thin film layer, and removing the portion of the metal thin film layer where the resist layer is not formed. Peeling and removing, and partially forming the metal thin film layer on the base sheet or the routing circuit pattern layer; and the metal thin film partially formed on the base sheet or the routing circuit pattern layer Forming a transparent conductive film layer containing graphene as a main component on the layer.

  A sixteenth aspect of the present invention includes a step of forming a metal thin film layer on a substrate sheet having smoothness, a step of forming a circuit pattern layer partially on the metal thin film layer, The step of partially forming a resist layer in a region where the routing circuit pattern layer is not formed and the metal thin film layer where the resist layer is not formed are removed, and then the resist layer is peeled and removed. A method for producing a transfer sheet, comprising: a step of partially forming a layer on a substrate sheet; and a step of forming a transparent conductive film layer mainly composed of graphene on the partially formed metal thin film layer.

  A seventeenth aspect of the present invention includes a step of forming a metal thin film layer on a substrate sheet having smoothness, a step of partially forming a resist layer on the metal thin film layer, and the resist layer of the metal thin film layer Removing the metal thin film layer where the metal film is not formed, and then removing the resist layer to partially form the metal thin film layer on the base sheet; and partially on the base sheet A transfer sheet comprising: a step of forming a transparent conductive film layer mainly composed of graphene on the metal thin film layer formed on the substrate; and a step of forming a circuit pattern layer on the transparent conductive film layer. Is the method.

  An eighteenth aspect of the present invention includes a step of forming a metal thin film layer on a substrate sheet having smoothness, a step of partially forming a resist layer on the metal thin film layer, and the resist of the metal thin film layer Removing the metal thin film layer where the layer is not formed and then stripping and removing the resist layer to partially form the metal thin film layer on the base sheet; and A transfer sheet comprising: a step of partially forming a routing circuit pattern layer; and a step of forming a transparent conductive film layer mainly composed of graphene in a region of the metal thin film layer where the routing circuit pattern layer is not formed. It is a manufacturing method.

  In the transfer sheet of the present invention, since the substrate sheet having smoothness and the metal thin film layer formed on the substrate sheet are also extremely thin, the smoothness of the surface of the substrate sheet is reflected to inevitably be a metal thin film. The layer surface is also very smooth. Therefore, the surface of the metal thin film layer, which is the base and catalyst, is extremely smooth, so that the transparent conductive film layer formed on the surface is less likely to have pinholes and the like, and is a very thin transparent conductive film layer. Even if it exists, there exists an effect which can form stably. Moreover, there is an effect of improving the uniformity of the thickness of the transparent conductive film layer itself. In addition to this, the graphene constituting the transparent conductive film layer also has a function of extremely high transparency.

  As a result, if the transfer sheet of the present invention is used, there is an effect that a transparent conductor excellent in conductivity and transparency can be produced. Further, if the uniformity of thickness is improved, the generation of wrinkles and the like of the transparent conductive film layer at the time of transfer is reduced. Furthermore, since the thickness of the metal thin film layer is extremely thin, the removal process of the metal thin film layer after adhering to the substrate is simplified, so that there is an effect that a high-quality transparent conductor can be manufactured with high productivity.

  Since the transfer sheet of the present invention uses a transparent conductive film layer mainly composed of flexible graphene, the transfer sheet can be formed on a flexible transfer target, and also formed on a three-dimensional transfer target. There is an effect that can be done. Furthermore, since the metal thin film layer can be patterned in the transfer sheet formation stage, a patterned transparent conductive film layer can be obtained simply by removing the metal thin film layer after it is formed on the transfer target. Therefore, there is an effect that the patterning process of the transparent conductive film layer after being formed on the transfer object is unnecessary and the process can be greatly simplified.

  In the transfer sheet of the present invention, a routing circuit is also formed in a pattern. Accordingly, there is an effect that the formation and patterning process of the routing circuit after the formation on the transfer object is unnecessary, and the process can be simplified greatly. In addition, since it is formed in advance on the transfer sheet, it can be formed on a flexible transfer object, and can also be formed on a transfer object having a three-dimensional shape. Furthermore, since it is formed as a part of the transfer layer on the surface of the substrate sheet having a very smooth releasability, the surface after transfer formation on the transfer object is flush and wear resistance, etc. The performance is improved and the effect of improving the design is obtained.

FIG. 1 is a cross-sectional view of a transfer sheet according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view of a modified example of the transfer sheet according to the first embodiment of the present invention. FIG. 3 is a cross-sectional view of a transfer sheet according to the second embodiment of the present invention. FIG. 4 is a cross-sectional view of a transfer sheet according to the third embodiment of the present invention. FIG. 5 is a cross-sectional view of a modified example of the transfer sheet according to the third embodiment of the present invention. FIG. 6 is a cross-sectional view of a transfer sheet according to the fourth embodiment of the present invention. FIG. 7 is a cross-sectional view of a transfer sheet according to the fifth embodiment of the present invention. FIG. 8 is a cross-sectional view showing a first embodiment of a method for producing a transfer sheet according to the present invention. FIG. 9 is a cross-sectional view showing a second embodiment of the transfer sheet manufacturing method according to the present invention. FIG. 10 is a cross-sectional view showing a transparent conductor produced using the transfer sheet according to the present invention. FIG. 11 is a diagram showing the evaluation results of the transfer sheets of Examples 1 to 5 and Comparative Examples 1 to 5.

  Hereinafter, embodiments according to the present invention will be described in more detail with reference to the drawings. It should be noted that the dimensions, materials, shapes, relative positions, etc. of the parts and portions described in the embodiments of the present invention are not intended to limit the scope of the present invention only to those unless otherwise specified. This is just an illustrative example.

  FIG. 1 is a view showing a transfer sheet according to the first embodiment of the present invention. Referring to FIG. 1, a transfer sheet 1 of the present invention includes a base sheet 2, a metal thin film layer 3, a transparent conductive film layer 4, a routing circuit pattern layer 5, a release layer 6, and an adhesive layer 7. In the transfer sheet 1 of the present invention, a release layer 6 is entirely formed on a base sheet 2, and a metal thin film layer 3 is partially formed on the release layer 6. And the transparent conductive film layer 4 is formed along the said metal thin film layer 3, and it follows the end surface shape of the transparent conductive film layer 4 and the metal thin film layer 3 over the base sheet 2 from the edge part of the transparent conductive film layer 4. Thus, a continuous circuit pattern layer is formed. An adhesive layer 7 is formed on the transfer sheet 1 over the entire surface. As described above, when the transfer sheet 1 is configured, the part on which the metal thin film layer 3 and the transparent conductive film layer 4 are formed is in contact with the release layer 6 on the drawn circuit pattern layer 5 after transfer. There will be a part to be formed. In the former part, since the transparent conductive film layer 4 is routed to protect the circuit pattern layer 5, when the metal thin film layer 3 is removed by etching or the like, problems such as corrosion of the routed circuit pattern layer 5 occur. There is a merit that it is difficult. In the latter part, when transferred, the routing circuit pattern layer 5 is exposed, and there is an advantage that it can be directly electrically connected to an external circuit.

[Base sheet]
The base sheet 2 is for supporting the metal thin film layer 3 and the transparent conductive film layer 4. The surface 2 of the base sheet has excellent smoothness and releasability. The arithmetic average roughness (Ra) of the surface of the base sheet 2 is preferably 0.1 nm ≦ Ra ≦ 20 nm. This is because, when the arithmetic average roughness (Ra) of the base sheet 2 exceeds 20 nm, the uneven shape of the metal thin film layer 3 formed on the base sheet 2 becomes large, and the graphene grains formed on the metal thin film layer 3 Due to the relatively small size and the like, the crystallinity is lowered and the conductivity of the transparent conductive film layer 4 containing graphene as a main component is lowered. On the contrary, the arithmetic average roughness (Ra) is 0. When the thickness is less than 1 nm, the uneven shape on the surface of the base sheet 2 cannot be made uniform, and there arises a problem that the release performance of the base sheet 2 is deteriorated, so that the transparent conductive film layer cannot be transferred to the transfer target. This is because. The arithmetic average roughness (Ra) is based on Japanese Industrial Standard (JIS) B0601-1994.

  The thickness of the base sheet is preferably 10 μm to 500 μm. If the thickness of the base sheet 2 is less than 10 μm, the rigidity of the base sheet 2 is lost. Therefore, when the metal thin film layer 3 or the transparent conductive film layer 4 is formed on the base sheet 2, the metal thin film layer 3 or transparent There arises a problem that the conductive film layer 4 cannot be supported. However, since there is a correlation between the thickness of the base sheet and the unevenness of the surface thereof, when the thickness of the base sheet becomes more than a certain value, that is, when the thickness of the base sheet 2 exceeds 500 μm, the shape of the surface of the base sheet 2 is arithmetic. This is because the average roughness (Ra) exceeds 20 nm and the above-described problems occur.

  The material of the base sheet 2 is not particularly limited as long as it is a material having heat resistance capable of withstanding the heat generated when the transparent conductive film layer 4 described later is formed. Examples of such heat-resistant materials include polyaramid, polyimide, polyetherimide, polysulfone, polyethersulfone, polyetheretherketone, polyphenylenesulfide, polyethylene naphthalate, polyamideimide, polyarylate, high density Examples thereof include resins such as polyolefin, polycarbonate, polyethylene terephthalate, polybutylene terephthalate, polyvinylidene fluoride, polyvinyl fluoride, polyvinylidene chloride, and liquid crystal polymer, and glass such as soda glass.

  When the material constituting the base sheet 2 does not have releasability, the base sheet 2 may be subjected to a release treatment. As a method of releasing the base sheet 2, (1) a method of subjecting the base sheet 2 to a low-pressure plasma treatment in an atmosphere of a fluorinated hydrocarbon compound, (2) an atmosphere of argon and acetone and / or helium, (3) A solid dielectric is placed on the surface of the counter electrode under an atmospheric pressure of a mixed gas composed of a fluorine atom-containing gas and an inert gas, and an electric field is applied between the counter electrodes. There is a method of releasing the substrate sheet with the discharge plasma generated by this.

[Metal thin film layer]
The metal thin film layer 3 of the present invention has a catalytic function for generating graphene, which is a main component of the transparent conductive layer 4, on the base sheet 2 and a function of reflecting the smoothness of the base sheet 2 on the metal thin film layer 3. Layer. As the material of the metal thin film layer 3, metals such as copper, nickel, ruthenium, iron, cobalt, iridium and platinum, and alloys thereof are used. From the viewpoint of reflecting the smoothness of the base sheet 2 in the metal thin film layer 3, the thickness of the metal thin film layer 3 of the present invention is preferably 0.01 to 1 μm.

  When the thickness of the metal thin film layer 3 is in the range of 0.01 μm to 1 μm, the smoothness of the base sheet 2 can be reflected, so that the surface of the metal thin film layer 3 becomes smooth and the graphene grains constituting the transparent conductive film layer 4 It seems that the graphene film having a relatively large size and good conductivity is formed. In addition, when the thickness of the metal thin film layer 3 is in the range of 0.01 μm to 1 μm, when a transparent conductor composed of the transfer target and the transparent conductive film layer 4 is formed using the transfer sheet 1, In this process, the metal thin film layer 3 and the transparent conductive film layer 4 are transferred from the transfer sheet 1 to the transfer target, and only the metal thin film layer 3 is removed from the transfer target. Therefore, the metal thin film layer 3 can be removed in a short time. In addition, it is technically difficult to form the metal thin film layer 3 with a thickness smaller than 0.01 μm, and on the contrary, when the metal thin film layer 3 is thicker than 1 μm, the smoothness of the base sheet 2 is reflected. It becomes difficult and it becomes easy to become the metal thin film layer 3 with large unevenness. As a result, the variation in thickness of the transparent conductive layer 4 formed on the metal thin film layer 3 becomes large, resulting in problems that the conductivity becomes unstable and defects such as pinholes are likely to occur. . Moreover, when producing the transparent conductor which consists of a to-be-transferred body and the transparent conductive film layer 4 using the transfer sheet 1, the metal thin film layer 3, transparent conductive material from the transfer sheet 1 which is the process to a to-be-transferred body. In the process of transferring the film layer 4 and removing only the metal thin film layer 3 from the transfer target, if the metal thin film layer 3 is thicker than 1 μm, there is a problem that it takes time to remove the metal thin film layer 3. It is.

When the metal thin film layer 3 is configured as described above, the chemical reaction is promoted by the catalytic action of the metal and a graphene film is generated. Therefore, it is considered that the graphene film along the shape of the metal surface is generated. Furthermore, if the metal thin film layer 3 is not configured as described above, the smoothness of the underlying metal thin film layer affects the smoothness of the graphene film, so the non-smooth graphene film is used for energy stabilization. It is thought that a five-membered ring or the like is generated at the bent portion and the conductivity is lowered.
In addition, if the metal thin film layer 3 is not configured as described above, the surface of the metal thin film layer 2 is not physically flat, and it is considered that electrons as carriers are scattered and the conductivity is lowered. Examples of the method for forming the metal thin film layer 3 include a sputtering method, a vapor deposition method, and an ion plating method.

[Transparent conductive film layer]
The transparent conductive film layer 4 of the present invention is a layer whose main component is composed of graphene. The fact that the main component is composed of graphene means that one or more graphene films occupy the most by weight ratio among the substances constituting the transparent conductive film layer. The transparent conductive film layer 4 may contain impurities. Examples of the impurities include amorphous carbon, metal of the metal thin film layer 4, and the like. The metal of the metal thin film layer 4 is a component that remains in the etching process after transfer to the transfer target. Moreover, the transparent conductive film layer 4 has conductivity, and is configured so that the light transmittance of wavelengths in the visible region is 80% or more as a whole. In addition, it is preferable that the thickness of the transparent conductive film layer 4 is 2 nm or more and 200 nm or less. This is because when the thickness is 200 nm or more, the transparency of the transparent conductive film layer 4 is inhibited, and when the thickness is 2 nm or less, the conductivity of the transparent conductive film layer 4 decreases. The transparent conductive film layer 4 is formed only on the patterned metal thin film layer 3 by chemical vapor deposition (CVD) or the like.

[Circuit circuit pattern layer]
The routing circuit pattern layer 5 is a layer for transmitting an electric signal detected by the transparent conductive film layer 4 to an external circuit. As a material, a metal such as gold, silver, copper, aluminum, nickel, palladium, or the like In addition to the conductive ink containing the powder, a conductive substance containing an organic conductor such as carbon can be used. Examples of the method for forming the routing circuit pattern layer 5 include printing methods such as screen printing, gravure printing, ink jet printing, and relief printing. Since the routing circuit pattern layer 5 is formed between the transparent conductive film layer 4 and the adhesive layer 7, the surface of the routing circuit pattern layer 5 after transfer is exposed on the surface for electrical connection with an external circuit. Since the transparent conductive film layer 4 is formed except for the terminal portion to be formed, the transparent conductive film layer 4 is routed to protect the circuit pattern layer 5. Therefore, when the metal thin film layer 3 is removed by etching or the like, a routing circuit is provided. There is an advantage that troubles such as corrosion of the pattern layer 5 hardly occur.

[Release layer]
The release layer is a layer that is peeled off from the base material together with the base sheet 2 when the transfer sheet 1 is used to transfer the transparent conductive film layer 4 and the like to the base material and peel off the base sheet 2 from the base material. If necessary, it is formed on the base sheet 2. By forming the release layer 6 on the base sheet 2, the peeling weight (force required for peeling) of the base sheet 2 can be adjusted. In addition to this, by forming the release layer 6 on the base sheet 2, even if the surface of the base sheet 2 is uneven, the release layer 6 has the unevenness on the surface of the base sheet 2. Since the base sheet is covered so as to be buried, the arithmetic surface roughness (Ra) of the surface of the release layer on which the metal thin film layer 3 is formed can be 1 nm ≦ Ra ≦ 20 nm. As a result, as in the case of the transfer sheet according to the first embodiment, there is a problem that the conductivity of the transparent conductive film layer 4 containing graphene as a main component is reduced, and a problem that the release performance of the release layer is reduced. It will not occur. The material of the release layer 6 has heat resistance that can withstand the heat generated during the formation of the transparent conductive film layer 4 and a predetermined release property. When the release layer 6 is formed on the base sheet 2, If the surface of the mold release layer 6 becomes excellent in smoothness, there will be no restriction | limiting in particular. Examples of the material for the release layer 6 include resins such as thermosetting acrylic, thermosetting polyester, thermosetting urethane, acrylic, epoxy, melamine, silicon, and fluorine. Examples of the method for forming the release layer 6 include coating by a roll coating method, a gravure printing method, a screen printing method, a die coating method, and the like.

[Adhesive layer]
The adhesive layer 7 is a layer for adhering the base material and the transfer sheet 1, and is formed on the surface of the transfer sheet 1 as necessary. The adhesive layer 7 is made of an acrylic or vinyl resin and has an insulating property. The insulating property here refers to, for example, a degree that does not cause a short circuit that causes malfunction of position detection in the input operation when the transparent conductor 11 is used as a touch panel for the transparent conductor 11 manufactured according to the present invention. It means the above insulation. The adhesive layer 7 is formed on the transfer sheet 1 by a gravure coating method, a roll coating method, a comma coating method, a gravure printing method, a screen printing method, an offset printing method, or the like.

  FIG. 2 is a view showing a modification of the transfer sheet according to the first embodiment of the present invention. Since the basic configuration of the transfer sheet 1 in this embodiment is the same as that of the transfer sheet according to the first embodiment, only the differences will be described here.

  Referring again to FIG. 2, the transfer sheet 1 according to the modification of the first embodiment of the present invention extends from the end of the transparent conductive layer 4 to the metal vapor deposition layer 3, and the end surface of the transparent conductive layer 4. A routing circuit pattern layer 5 is formed along the shape. Thus, when the transfer sheet 1 is configured, only the metal thin film layer 3 and the portion where the metal thin film layer 3 and the transparent conductive film layer 4 are formed are formed on the drawn circuit pattern layer 5 after the transfer. There will be a part to be done. In the former part, since the transparent conductive film layer 4 is routed to protect the circuit pattern layer 5, when the metal thin film layer 3 is removed by etching or the like, problems such as corrosion of the routed circuit pattern layer 5 occur. There is a merit that it is difficult. In the latter part, when the metal thin film layer 3 is removed by etching or the like, the routing circuit pattern layer 5 is exposed, and there is an advantage that it can be directly electrically connected to an external circuit.

  FIG. 3 is a view showing a transfer sheet according to the second embodiment of the present invention. The structure of the transfer sheet 1 is that a release layer 6, a metal vapor deposition layer 3, and a transparent conductive film layer 4 are entirely formed on a base sheet 1, and a routing circuit pattern layer 5 is formed of the transparent conductive film layer 4. Partly formed on top. An adhesive layer 7 is formed over the entire surface of the transfer sheet 1. Referring to FIG. 3, when the transfer sheet 1 is configured as described above, the transparent conductive film layer 4 is formed on the drawn circuit pattern layer 5 after the transfer. Therefore, when the metal thin film layer 3 is removed by etching or the like, there is an advantage that problems such as corrosion of the routed circuit pattern layer 5 are less likely to occur. However, since the transparent conductive film layer 4 is interposed for electrical connection with an external circuit, care must be taken not to increase the contact resistance value.

  FIG. 4 is a view showing a transfer sheet 1 according to the third embodiment of the present invention. Since the basic configuration of the transfer sheet 1 in this embodiment is the same as that of the transfer sheet according to the second embodiment, only the differences will be described here.

  Referring again to FIG. 4, the transfer sheet 1 according to the third embodiment of the present invention is the second embodiment in that the routing circuit pattern layer 5 is formed between the release layer 6 and the metal thin film layer 3. Different from the transfer sheet 1 according to the embodiment. As described above, since the routing circuit pattern layer 5 is formed between the release layer 6 and the metal thin film layer 3, the routing circuit pattern layer 5 after the transfer is exposed over the entire surface. Therefore, since all the routing circuit pattern layers 5 after transfer can be used as terminals for electrical connection with an external circuit, there is a merit that there is a large room for selecting the position of the terminals and electrical connection is easy.

  FIG. 5 is a view showing a modification of the transfer sheet 1 according to the third embodiment of the present invention. Since the basic configuration of the transfer sheet 1 of the modification is the same as that of the transfer sheet according to the third embodiment, only the differences will be described here.

  Referring to FIG. 5 again, the transfer sheet 1 according to the present invention is the fourth embodiment in that the metal thin film layer 3 and the transparent conductive film layer 4 are partially formed on the base sheet 2. This is different from the transfer sheet 1 according to the above. Thus, when the transfer sheet 1 is configured, the patterned transparent conductive layer 4 can be obtained simply by removing the metal thin film layer 3 after the transfer. Therefore, it is necessary to pattern the transparent conductive layer 4 after the transfer. There is an advantage that productivity can be greatly improved.

  FIG. 6 is a view showing a transfer sheet according to the fourth embodiment of the present invention. Since the basic configuration of the transfer sheet 1 in this embodiment is the same as that of the transfer sheet according to the third embodiment, only the differences will be described here.

  Referring again to FIG. 6, the transfer sheet 1 according to the fourth embodiment of the present invention includes a base sheet 2, a release layer 6, a metal thin film layer 3, a transparent conductive film layer 4, and a routing circuit pattern layer 5. , And an adhesive layer 7. In the transfer sheet 1 according to the fourth embodiment, the drawing circuit pattern layer 5 is formed on the metal thin film layer 3, and the transparent conductive film layer 4 is arranged in parallel with the drawing circuit pattern layer 5. It differs from the transfer sheet 1 according to the third embodiment in that it is formed on the layer 3. Thus, the routing circuit pattern layer 5 is formed on the metal thin film layer 3, and the transparent conductive film layer 4 is formed on the metal thin film layer 3 so as to be juxtaposed with the routing circuit pattern layer 5. Since the patterned transparent conductive layer 4 can be obtained simply by removing the metal thin film layer 3 after the transfer, there is no need to pattern the transparent conductive layer 4 after the transfer, and there is a merit that productivity can be greatly improved. In addition, it is possible to obtain a terminal for electrical connection with an external circuit simply by removing the metal thin film layer 3 after the transfer, and there is a merit that there is a large room for selecting the position of the terminal and electrical connection is easy.

  FIG. 7 is a view showing a transfer sheet according to the fifth embodiment of the present invention. Since the basic configuration of the transfer sheet 1 in this embodiment is the same as that of the transfer sheet according to the second embodiment, only the differences will be described here.

  Referring again to FIG. 7, the transfer sheet 1 according to the fifth embodiment of the present invention includes a base sheet 2, a release layer 6, a metal thin film layer 3, a transparent conductive film layer 4, and a routing circuit pattern layer 5. , And an adhesive layer 7. The transfer sheet 1 according to the fifth embodiment is formed on the metal thin film layer 3 so that the transparent conductive film layer 4 is routed and juxtaposed with the circuit pattern layer 5. And different.

  As described above, when the transfer sheet 1 is configured, the drawn circuit pattern layer 5 after transfer is exposed when the metal thin film layer 3 is removed by etching or the like. Therefore, since all the routing circuit pattern layers 5 after transfer can be used as terminals for electrical connection with an external circuit, there is a merit that there is a large room for selecting the position of the terminals and electrical connection is easy.

  Next, a method for manufacturing the transfer sheet 1 will be described. The transfer sheet described above can be manufactured mainly in two embodiments. Regarding the manufacturing method, the first embodiment will be described first, and then the second embodiment will be described.

  FIG. 8 shows a first embodiment of a method for producing a transfer sheet 1 according to the present invention. Referring to FIG. 8, in the first embodiment of the method for manufacturing transfer sheet 1 according to the present invention, the step of partially forming mask layer 8 on base sheet 2 and the mask layer 8 are not formed. A step of forming a circuit pattern layer 5 in a region on the base sheet 2; a step of forming a metal thin film layer 3 on the circuit layer 5 and the base sheet 2; a mask layer 8; The metal thin film layer 3 formed on the layer 8 is peeled and removed with a solvent, and the metal thin film layer 3 is formed on the circuit pattern layer 5 by being routed on the substrate sheet 2, and the substrate sheet 2 and the circuit being routed Forming a transparent conductive film layer 4 mainly composed of graphene on the metal thin film layer 3 formed on the pattern layer 5.

  With reference to FIG. 8A, in the first step of the method for manufacturing the transfer sheet 1 according to the present invention, a mask layer 8 is partially formed on a part of the base sheet 2.

[Mask layer]
The mask layer of the present invention is a layer soluble in a solvent. Examples of the material of the mask layer 7 include polyvinyl alcohol (PVA) and water-soluble acrylic resin. Examples of the solvent include an aqueous solution and an alcohol solution. Examples of the forming method include printing methods such as offset printing, screen printing, gravure printing, inkjet printing, and relief printing. Compared to the photoresist method described later, the number of steps is small.

  Referring to FIG. 8B, in the second step, the circuit pattern layer 5 is formed around the base sheet 2 where the mask layer 8 is not formed. Examples of the method for forming the routing circuit pattern layer 5 include printing methods such as screen printing, gravure printing, ink jet printing, and relief printing. Conductive circuit pattern layer 5 is made of a metal such as gold, silver, copper, aluminum, nickel, palladium, or conductive ink containing powder of the metal, or conductive material including organic conductor such as carbon. Substances.

  Referring to FIG. 8C, in the third step, the metal thin film layer 3 is formed on the base sheet 2, the mask layer 8, and the circuit pattern layer 5. In the case of forming the transparent conductive film layer 4, the metal thin film layer 3 is formed on the entire surface of the base sheet 2 by sputtering, vapor deposition, ion plating, or the like.

  Referring to FIG. 8D, in the fourth step, the metal thin film layer 3 formed on the mask layer 8 is peeled and removed with a solvent, and the metal thin film is drawn on the base sheet 2 and the circuit pattern layer 5. Layer 3 is formed. As a solvent for peeling and removing the mask layer 8 and the like, aqueous solutions and alcohols are often used.

  Referring to FIG. 8E, in the fifth step, the transparent conductive film layer 4 mainly composed of graphene is formed on the metal thin film layer 3 formed on the base sheet 2 and the circuit pattern layer 5. . As a method of forming the transparent conductive film layer 4 containing graphene as a main component on the metal thin film layer 3, a chemical vapor deposition method (CVD method) is used. Among the chemical vapor deposition methods, a microwave plasma CVD method is used. It is preferable to use it.

  When microwave plasma CVD is used, graphene can be formed using microwave plasma under relatively low pressure and low temperature conditions, so that the distribution of energy density of generated plasma can be controlled, and a transparent conductive film Damage to the base sheet 2 that supports the layer 4 can be reduced. Furthermore, since the opposite side of the base sheet 2 on which the graphene film is formed is cooled, damage to the base sheet 2 can also be reduced. As described above, since the transparent conductive film layer 4 can be formed on the base sheet 2 through the metal thin film layer 3 under a relatively low temperature, a flexible film can be used as the base sheet 2. As a result, a roll-to-roll method can be adopted in forming the transparent conductive film layer 4 and all steps for producing a transfer sheet can be made a roll-to-roll method. Productivity is dramatically improved.

  The source gas for microwave plasma CVD is a mixed gas of hydrocarbon and rare gas, and examples of the hydrocarbon include methane (CH4), ethane (C2H6), propane (C3H8), and acetylene (C2H2). Examples of the rare gas include helium (He), neon (Ne), and argon (Ar). In a state where the chamber of the CVD apparatus is decompressed, the total pressure of the mixed gas in the apparatus is set to 1 to 1000 Pa, preferably 10 to 400 Pa. A small amount of hydrogen gas may be mixed with this mixed gas. The temperature in the chamber of the CVD apparatus is 25 to 400 ° C, preferably 300 to 400 ° C.

  The transfer sheet 1 can be obtained through the steps from the first step to the fifth step.

  In addition, you may form the contact bonding layer 7 on the transparent conductive film layer 4 after a 5th process as needed. The material and forming method of the adhesive layer 7 are as described above.

  In addition, you may form the release layer 6 on the base sheet 2 before a 1st process as needed. The material and forming method of the release layer 6 are as described above.

  Note that the step of forming the routing circuit pattern layer 5 may be performed before the step of forming the mask layer 8 as necessary. With this configuration, when the mask layer is transparent or translucent and alignment with the routing circuit pattern layer 5 is difficult, positioning can be facilitated by providing the opaque routing circuit pattern layer 5 first.

  In addition, you may perform the process of forming the circuit pattern layer 5 as needed between the process of forming the metal thin film layer 3, and the process of peeling and removing the mask layer 8 as needed. In this case, the routing circuit pattern layer 5 is formed on the metal thin film layer 3 formed on the base sheet 2 and on which the mask layer is not formed. With this configuration, it is possible to expose the routing circuit pattern layer 5 simply by removing the metal thin film layer 3, so that electrical connection with an external circuit can be facilitated.

  In addition, you may perform the process of forming the circuit pattern layer 5 as needed between the process of peeling and removing the mask layer 8, and the process of forming the transparent conductive film layer 4 as needed. In this case, the routing circuit pattern layer 5 is formed on a part of the metal thin film layer 3 that has not been peeled and removed from the base sheet 2. With this configuration, the routing circuit pattern layer 5 is not directly affected by the solvent used in the process of peeling and removing the mask layer 8, so that the routing circuit pattern layer 5 does not take into account defects such as corrosion. Can be formed.

  In addition, you may perform the process of forming the circuit pattern layer 5 as needed after the process of forming the transparent conductive film layer 4 as needed. In this case, the routing circuit pattern layer 5 is formed on the transparent conductive film layer 4. With this configuration, since the transparent conductive film layer 4 is formed on the routed circuit pattern layer 5 after transfer, the routed circuit pattern layer 5 is protected by the transparent conductive film layer 4.

  FIG. 9 shows a second embodiment of the method for producing the transfer sheet 1 according to the present invention. Since the basic configuration of the transfer sheet manufacturing method according to this embodiment is the same as that according to the transfer sheet 1 manufacturing method according to the first embodiment, only the differences will be described here.

  Referring to FIG. 9, in the second embodiment of the method for manufacturing transfer sheet 1 according to the present invention, the step of forming the routing circuit pattern layer 5 on a part of the substrate sheet 2, the routing circuit pattern layer 5 and the substrate sheet are performed. Forming the metal thin film layer 3 on the substrate 2, forming the resist layer 9 on the metal thin film layer 3 formed on the routing circuit pattern layer 5, and forming the metal on the base sheet 2. The step of partially forming the resist layer 9 on the thin film layer 3 and the metal thin film layer 3 where the resist layer 9 is not formed are peeled and removed with a solvent, and the metal thin film layer is partially formed on the base sheet 2. And a step of forming the resist layer 9, a step of removing the resist layer 9 using a solvent, exposing the metal thin film layer 3 to the surface, and graphene as a main component on the metal thin film layer 3 exposed on the surface Form transparent conductive film layer 4 And a step of.

  With reference to FIG. 9A, in the first step of the method for manufacturing the transfer sheet 1 according to the present invention, the circuit pattern layer 5 is formed around a part of the base sheet 2.

  With reference to FIG. 9B, in the second step of the manufacturing method of the transfer sheet 1 according to the present invention, the metal thin film layer 3 is formed on the drawing circuit pattern layer 5 and the base sheet 2.

[Resist layer]
Referring to FIG. 9C, in the third step, the resist layer 9 is formed on the metal thin film layer 3 formed on the routing circuit pattern layer 5, and is formed on the base sheet 2. A resist layer 9 is partially formed on the metal thin film layer 3. The material of the resist layer 9 can be made of various resins such as acrylic and vinyl, and is not particularly limited. The resist layer 9 is formed by first forming the entire surface by a printing method such as screen printing, gravure printing, ink jet printing, letterpress printing, or a metal thin film layer in which a resist film having the resist layer is formed on the base sheet 2. 3 is bonded by heating and pressing.

  However, in the case of fine patterning, it is preferable to use a resin that can be a photoresist as the resist layer 9, such as a novolak resin or tetramethylammonium hydroxide. In this case, after the resist layer 9 is formed by the above method, the resist layer 9 is irradiated with light and subjected to an exposure process in which the irradiated part is reactively cured, and then is subjected to a development process in which the part not irradiated with light is removed. A resist layer 9 is partially formed.

  Referring to FIG. 9D, the metal thin film layer 3 where the resist layer 9 is not formed in the fourth step is peeled off with a solvent, and the metal thin film layer 3 and the resist layer are partially removed on the base sheet 2. 9 is formed. As a solvent for peeling and removing the metal thin film layer 3 where the resist layer 9 is not formed, an acid or alkali aqueous solution may be used. As the acid, hydrochloric acid, sulfuric acid, nitric acid and the like are used, and as the aqueous alkali solution, a sodium hydroxide aqueous solution and the like are preferably used.

  Referring to FIG. 9E, in the fifth step, the resist layer 9 is removed using a solvent to expose the metal thin film layer 3 on the surface. As a solvent for removing the resist layer 9, an organic quaternary base can be used. Examples of organic quaternary bases include tetramethylammonium hydroxide and tetrabutylammonium hydroxide.

  Through the steps from the first step to the fifth step, fine patterning is possible as compared with the case where the metal thin film layer 3 is patterned with the mask layer 8.

  In addition, you may form the contact bonding layer 7 after a 5th process as needed. The material and forming method of the adhesive layer 7 are as described above.

  In addition, you may form the release layer 6 on the base sheet 2 before a 1st process as needed. The material and forming method of the release layer 6 are as described above.

  If necessary, the step of forming the routing circuit pattern layer 5 may be performed between the step of forming the metal thin film layer 3 and the step of forming the resist layer 9. In this case, the routing circuit pattern layer 5 is formed on a part of the metal thin film layer 3 formed on the base sheet 2. The resist layer 9 is partially formed on the routing circuit pattern layer 5 and the metal thin film layer 3. With this configuration, when the resist layer 9 is transparent or translucent and it is difficult to align with the circuit pattern layer 5, the alignment can be easily performed by providing the opaque circuit pattern layer 5 first. .

  Note that the step of forming the routing circuit pattern layer 5 as necessary may be performed between the step of removing the resist layer 9 to expose the metal thin film layer 3 on the surface and the step of forming the transparent conductive film layer 4. Good. In this case, the routing circuit pattern layer 5 is formed on a part of the metal thin film layer 3 partially formed on the base sheet 2. With this configuration, it is possible to expose the routing circuit pattern layer 5 simply by removing the metal thin film layer 3, so that electrical connection with an external circuit can be facilitated.

  In addition, you may perform the process of forming the circuit pattern layer 5 as needed after the process of forming the transparent conductive film layer 4 as needed. In this case, the routing circuit pattern layer 5 is formed on the transparent conductive film layer 4. With this configuration, since the transparent conductive film layer 4 is formed on the routed circuit pattern layer 5 after transfer, the routed circuit pattern layer 5 is protected by the transparent conductive film layer 4.

  FIG. 10 is a view showing the transparent conductor 11 manufactured using the transfer sheet 1 according to the first to fifth embodiments of the present invention. Referring to FIG. 10, the transparent conductor 11 of the present invention is composed of a base material 10, an adhesive layer 7, a routing circuit pattern layer 5, and a transparent conductive film layer 4 formed on the base material 10. Yes.

[Base material]
The substrate 10 is not particularly limited as long as it is transparent, does not have electrical conductivity, and has a certain degree of hardness, and may be a three-dimensional shaped product in addition to a film shape. Examples of the material of the substrate 10 include glass, polyethylene terephthalate (PET), polyethylene, polypropylene, polystyrene, polyester, polycarbonate (PC), polyvinyl chloride, and acrylic. The thickness of the film-shaped substrate 10 is preferably 30 to 200 μm.

  The transparent conductor 11 transfers the transparent conductive film layer 4, the metal thin film layer 3, and the routing circuit pattern layer 5 of the transfer sheet 1 of the present invention to the substrate 10 through the adhesive layer 7, and then from the substrate 10. It is obtained by removing only the metal thin film layer 3. That is, after integrating the transfer sheet 1 and the base material 10 of the present invention under conditions such as pressure or heating, the base sheet 2 is peeled off from the base material 10 and the metal thin film layer 3 is etched using an etching solution or the like. It is obtained by removing.

Example 1
A mask layer is formed using a polyvinyl alcohol resin on a base sheet ((product name) Mikutron (company name) Toray Co., Ltd.) made of a 25-μm thick polyaramid film having a surface arithmetic average roughness (Ra) of 7 nm. Partially formed by offset printing. After the mask layer was dried, a metal thin film layer (Cu layer having a thickness of 100 nm) was formed on the base sheet and the mask layer by sputtering. Thereafter, the mask layer and the metal thin film layer formed on the mask layer were removed by washing with water to obtain a partially formed metal thin film layer. And the obtained sheet | seat is installed in a chamber, The said gas in the chamber so that the pressure of the raw material gas (partial pressure ratio methane: argon = 1: 1) which consists of methane and argon in a chamber may become fixed (360 Pa). The inflow speed of the source gas and the exhaust speed by the pump were adjusted. In this state, a transparent conductive film layer containing graphene as a main component was formed by microwave plasma CVD under conditions of 380 ° C. and 40 seconds. Then, using ((product name) silver paste SAP-15 (company name) Sanwa Chemical Industry Co., Ltd.), a circuit pattern layer is formed on the transparent conductive film layer, and finally an adhesive layer is formed on the entire surface. A transfer sheet was obtained.
Example 2
A transfer sheet was obtained in the same manner as in Example 1 except that a base sheet having a surface arithmetic average roughness (Ra) of 17 nm was used.
Example 3
A transfer sheet was obtained in the same manner as in Example 1 except that the thickness of the metal thin film layer was 0.01 μm.
Example 4
A transfer sheet was obtained in the same manner as in Example 1 except that the thickness of the metal thin film layer was 0.8 μm.
Example 5
Before forming a mask layer on a substrate sheet ((product name) Mikutron (company name) Toray Co., Ltd.) made of a polyaramid film having a thickness of 25 μm, a fluororesin is used on the substrate sheet. A transfer sheet was obtained in the same manner as in Example 1 except that a release layer having an arithmetic average roughness (Ra) of 0.2 nm was formed.
Comparative Example 1
A transfer sheet was obtained in the same manner as in Example 5 except that a release layer having an arithmetic mean surface roughness (Ra) of 20 nm was formed and the thickness of the metal thin film layer was 0.9 μm. It was.
Comparative Example 2
A transfer sheet was obtained in the same manner as in Example 1 except that a base sheet having a surface arithmetic average roughness (Ra) of 22 nm was used.
Comparative Example 3
A transfer sheet was obtained in the same manner as in Example 1 except that the thickness of the metal thin film layer was 0.007 μm.
Comparative Example 4
A transfer sheet was obtained in the same manner as in Example 1 except that the arithmetic average roughness of the surface was 20 nm and the thickness of the metal thin film layer was 0.9 μm.
Comparative Example 5
A transfer sheet was obtained in the same manner as in Example 5 except that the thickness of the metal thin film layer was 1.3 μm.

  Next, after pasting the transfer sheets obtained in Examples 1 to 5 and Examples 1 to 5 to a 200 μm polyethylene terephthalate film as a transfer object, a base sheet or base sheet as a part of the transfer sheet The release layer was peeled off from the transferred object, and only the metal thin film layer formed on the surface of the transferred object was removed with an etching solution to obtain a transparent conductive material composed of the transferred object and the transparent conductive film layer. .

Measurement of surface roughness of base sheet or release layer The surface roughness of the base sheet or release layer was measured by a method according to (JIS) B0601-1994, using Kosaka Laboratory Ltd. F3500D. The result is shown in FIG.

Evaluation of releasability of transfer sheet Regarding the releasability of the transfer sheets obtained in Examples 1 to 5 and Comparative Examples 1 to 5, the transparent conductor was evaluated as follows. In the evaluation method, the transfer sheets of Examples 1 to 5 and Examples 1 to 5 were attached to a 200 μm polyethylene terephthalate film, and the base sheet or base sheet and the release layer were peeled off from the polyethylene terephthalate film. The measurement was performed by measuring the ratio of the metal thin film layer remaining on the base sheet or the release layer. The result is shown in FIG.
○: the metal thin film layer is adhered to the substrate sheet or the release layer in a 1 cm ² 0.02 cm less than ^2.
△: the metal thin film layer is adhered to the substrate sheet or the release layer is less than 1 cm ² in 0.02 cm ² or more 0.1 cm ^2.

Evaluation of Stability of Transparent Conductor For the transparent conductors prepared using the transfer sheets of Examples 1 to 5 and Comparative Examples 1 to 5, the degree of variation in conductivity was evaluated as follows. The evaluation method measured the resistance between the terminals of the same shape 10 times in the patterned transparent conductive film layer, calculated the standard deviation of the obtained resistance value, and evaluated it as follows. The result is shown in FIG.
○: Within average value ± 1σ (standard deviation)
Δ: Within average value ± 2σ (standard deviation) ×: Over average value ± 2σ (standard deviation)

Conductivity Evaluation of Transparent Conductor The conductivity of transparent conductors prepared using the transfer sheets of Examples 1 to 5 and Comparative Examples 1 to 5 was evaluated as follows. In the evaluation method, the surface resistance value of the membrane surface was measured with a surface resistance meter (Loresta IP) manufactured by Mitsubishi Oil Chemical Co., Ltd. The result is shown in FIG.
○: Surface resistance value is less than 200Ω / □ △: Surface resistance value is 200Ω / □ or more and 500Ω / □ or less ×: Surface resistance value exceeds 500Ω / □

Transparency Evaluation of Transparent Conductor The transparency of transparent conductors prepared using the transfer sheets of Examples 1 to 5 and Comparative Examples 1 to 5 was evaluated as follows. The evaluation method followed JIS-K-7361 and evaluated total light transmittance with the haze meter HR-100 of Murakami Color Research Laboratory. The result is shown in FIG.
○: Total light transmittance of 90% or more Δ: Total light transmittance of 80% or more and less than 90%

DESCRIPTION OF SYMBOLS 1 Transfer sheet 2 Base sheet 3 Metal thin film layer 4 Transparent conductive film layer 5 Leading circuit pattern layer 6 Release layer 7 Adhesive layer 8 Mask layer 9 Resist layer 10 Base material 11 Transparent conductor

Claims (18)

A base sheet having smoothness;
A metal thin film layer partially or entirely formed on the base sheet to reflect the smoothness of the base sheet;
A transparent conductive film layer mainly formed of graphene formed on the metal thin film layer;
A routing circuit pattern layer formed on a part of the transparent conductive film layer;
A transfer sheet comprising: A base sheet having smoothness;
A metal thin film layer partially formed on the base sheet to reflect the smoothness of the base sheet;
A transparent conductive film layer mainly formed of graphene formed on the metal thin film layer;
A routing circuit pattern layer formed continuously from the end of the transparent conductive film layer to the base sheet so as to follow the end face shape of the transparent conductive film layer and the metal thin film layer,
A transfer sheet comprising: A base sheet having smoothness;
A metal thin film layer partially formed on the base sheet to reflect the smoothness of the base sheet;
A transparent conductive film layer partially formed on the metal thin film layer and mainly composed of graphene;
A routing circuit pattern layer formed continuously from the end of the transparent conductive film layer to the metal thin film layer so as to conform to the end face shape of the transparent conductive film layer,
A transfer sheet comprising: A base sheet having smoothness;
A routing circuit pattern layer partially formed on the base sheet;
A metal thin film layer formed partially or entirely on the routing circuit pattern layer and reflecting the smoothness of the substrate sheet in a region where no routing circuit is formed on the substrate sheet;
A transparent conductive film layer mainly formed of graphene formed on the metal thin film layer;
A routing circuit pattern layer formed on the transparent conductive film layer and the base sheet;
A transfer sheet comprising: A base sheet having smoothness;
A metal thin film layer partially or entirely formed on the base sheet to reflect the smoothness of the base sheet;
A routing circuit pattern layer formed on a portion of the metal thin film layer;
A transparent conductive film layer mainly composed of graphene formed on the metal thin film layer so as to be juxtaposed with the routing circuit pattern layer;
A transfer sheet comprising:   The transfer sheet according to claim 1, wherein the metal thin film layer has a thickness of 0.01 to 1 μm.   The transfer sheet according to claim 1, wherein the arithmetic mean roughness (Ra) of the surface of the base sheet is 20 nm or less.   The transfer sheet according to claim 1, further comprising a release layer on the base sheet.   The transfer sheet according to claim 1, further comprising an adhesive layer on the metal thin film layer. Patterning a mask layer on a portion of a substrate sheet having smoothness;
Forming a circuit pattern layer in a portion of the base sheet where the mask layer is not formed;
Forming a metal thin film layer in a region where the mask layer and the routing circuit pattern layer of the base sheet are not formed;
Peeling and removing the mask layer together with a part of the metal thin film layer formed thereon, and partially forming the metal thin film layer on the base sheet;
Forming a transparent conductive film layer mainly composed of graphene on the partially formed metal thin film layer and the routing circuit pattern layer;
A method for producing a transfer sheet. Forming a circuit pattern layer around a portion of the substrate sheet having smoothness;
A mask layer is partially formed only in a region where the routing circuit pattern layer is not formed on the substrate sheet and the routing circuit pattern layer, or only in a region where the routing circuit pattern layer is not formed on the substrate sheet. And a process of
A step of forming a metal thin film layer on the mask layer on the base sheet, on the mask layer, on the mask layer, and on the lead circuit pattern layer;
Peeling and removing the mask layer together with a part of the metal thin film layer formed thereon, and partially forming the metal thin film layer on the base sheet;
Forming a transparent conductive film layer mainly composed of graphene on the partially formed metal thin film layer and the transparent conductive film layer;
A method for producing a transfer sheet. A step of partially forming a mask layer on a substrate sheet having smoothness;
An area where the mask layer is not formed on the base sheet; and a step of forming a metal thin film layer on the mask layer;
A step of forming a circuit pattern layer in a region where the mask layer is not formed on the base sheet on which the metal thin film layer is formed;
Peeling and removing the mask layer together with a part of the metal thin film layer formed thereon, and partially forming the metal thin film layer on the base sheet;
Forming a transparent conductive film layer mainly composed of graphene on the partially formed metal thin film layer and the transparent conductive film;
A method for producing a transfer sheet comprising: A step of partially forming a mask layer on a substrate sheet having smoothness;
A region on the base sheet where the mask layer is not formed, and a step of forming a metal thin film layer on the mask layer;
Peeling and removing the mask layer together with a part of the metal thin film layer formed thereon, and partially forming the metal thin film layer on the base sheet;
Forming a transparent conductive film layer mainly composed of graphene on the partially formed metal thin film layer;
Forming a circuit pattern layer on the transparent conductive film layer;
A method for producing a transfer sheet comprising: A step of partially forming a mask layer on a substrate sheet having smoothness;
An area where the mask layer is not formed on the base sheet; and a step of forming a metal thin film layer on the mask layer;
Peeling and removing the mask layer together with a part of the metal thin film layer formed thereon, and partially forming the metal thin film layer on the base sheet;
Forming a circuit pattern layer around the metal thin film layer partially formed on the region where the peeled and removed mask layer is formed on the substrate sheet, or the region and the substrate sheet;
A step of forming a transparent conductive film layer mainly composed of graphene in the metal thin film layer partially formed on the base sheet and where the routing circuit layer is not formed;
A method for producing a transfer sheet comprising: A step of partially forming a circuit pattern layer on a base sheet having smoothness;
A step of forming a metal thin film layer on the substrate sheet and the region where the routing circuit pattern layer is not formed and the routing circuit pattern layer;
Forming a resist layer on a portion of the metal thin film layer;
Removing the portion of the metal thin film layer where the resist layer is not formed, peeling and removing the resist layer, and partially forming the metal thin film layer on the base sheet or the routing circuit pattern layer; ,
Forming a transparent conductive film layer mainly composed of graphene on the metal thin film layer partially formed on the base sheet or the routing circuit pattern layer;
A method for producing a transfer sheet comprising: Forming a metal thin film layer on a substrate sheet having smoothness;
Forming a circuit pattern layer partially on the metal thin film layer;
A step of partially forming a resist layer in a region of the metal thin film layer where the routing circuit pattern layer is not formed, and removing the metal thin film layer where the resist layer is not formed, and then peeling the resist layer Removing and partially forming a metal thin film layer on the substrate sheet;
Forming a transparent conductive film layer mainly composed of graphene on the partially formed metal thin film layer;
A method for producing a transfer sheet comprising: Forming a metal thin film layer on a substrate sheet having smoothness;
Partially forming a resist layer on the metal thin film layer;
Removing the metal thin film layer where the resist layer of the metal thin film layer is not formed and then removing the resist layer to partially form the metal thin film layer on the base sheet;
Forming a transparent conductive film layer mainly composed of graphene on the metal thin film layer partially formed on the base sheet;
Forming a circuit pattern layer on the transparent conductive film layer;
A method for producing a transfer sheet comprising: Forming a metal thin film layer on a substrate sheet having smoothness;
Partially forming a resist layer on the metal thin film layer;
Removing the metal thin film layer where the resist layer of the metal thin film layer is not formed and then removing the resist layer to partially form the metal thin film layer on the base sheet; ,
Forming a circuit pattern layer partially on the metal thin film layer;
Forming a transparent conductive film layer mainly composed of graphene in a region where the routing circuit pattern layer of the metal thin film layer is not formed;
A method for producing a transfer sheet comprising:

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