JP2012202801A5 - - Google Patents
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- JP2012202801A5 JP2012202801A5 JP2011067260A JP2011067260A JP2012202801A5 JP 2012202801 A5 JP2012202801 A5 JP 2012202801A5 JP 2011067260 A JP2011067260 A JP 2011067260A JP 2011067260 A JP2011067260 A JP 2011067260A JP 2012202801 A5 JP2012202801 A5 JP 2012202801A5
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- Prior art keywords
- semiconductor device
- life
- life curve
- lifetime
- estimating
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Claims (1)
前記工程（ａ−３）は、前記半導体装置の前記半導体チップ内部における温度の最大値を表す最大仮想接合温度も用いて、前記第２寿命カーブを前記第１寿命カーブに換算する、半導体装置の寿命推定方法。 A method of estimating the lifetime of a semiconductor device according to claim 2 or claim 3 ,
The step (a-3) converts the second life curve into the first life curve using the maximum virtual junction temperature that represents the maximum value of the temperature inside the semiconductor chip of the semiconductor device. Life estimation method.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011067260A JP5641998B2 (en) | 2011-03-25 | 2011-03-25 | Semiconductor device lifetime estimation method |
| DE102011088728.8A DE102011088728B4 (en) | 2011-03-25 | 2011-12-15 | Longevity estimation method for a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011067260A JP5641998B2 (en) | 2011-03-25 | 2011-03-25 | Semiconductor device lifetime estimation method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012202801A JP2012202801A (en) | 2012-10-22 |
| JP2012202801A5 true JP2012202801A5 (en) | 2013-07-04 |
| JP5641998B2 JP5641998B2 (en) | 2014-12-17 |
Family
ID=46831742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011067260A Active JP5641998B2 (en) | 2011-03-25 | 2011-03-25 | Semiconductor device lifetime estimation method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5641998B2 (en) |
| DE (1) | DE102011088728B4 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103884927B (en) * | 2012-12-21 | 2016-05-25 | 中国科学院金属研究所 | Microelectronic product method for testing reliability under many couplings of a kind of power electric heating |
| CN108445371B (en) * | 2018-01-18 | 2021-02-19 | 国网浙江省电力公司舟山供电公司 | Method for pre-sorting service life of insulated gate bipolar transistor |
| AT522383A1 (en) | 2019-03-12 | 2020-10-15 | Schneider Electric Power Drives Gmbh | PROCEDURE FOR EVALUATING THE THERMAL LOAD OF AN INVERTER |
| CN111060798B (en) * | 2019-12-18 | 2021-10-15 | 中国测试技术研究院流量研究所 | Automatic power aging test system and test method for MOS (metal oxide semiconductor) tube |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69029530T2 (en) * | 1989-04-10 | 1997-08-07 | Hitachi Ltd | Procedure for determining the life of a connection |
| JP4591246B2 (en) | 2005-07-14 | 2010-12-01 | 株式会社日立製作所 | Power converter |
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2011
- 2011-03-25 JP JP2011067260A patent/JP5641998B2/en active Active
- 2011-12-15 DE DE102011088728.8A patent/DE102011088728B4/en active Active