JP2012190098A - Etching simulation device, etching simulation method, program, and recording medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an etching simulation device and the like capable of reducing a cost when generating mask data by performing an etching simulation accurately reflecting a change in a shape of an embossed plate.SOLUTION: An etching simulation device 1 performs a simulation for etching on height field data (an etching object) 29 using mask data 26 generated by using height field data (texture) 25. In that case, the etching simulation device 1 reflects, on a mask section 26b side, an influence of a side etching in which the etching progresses according to distance from a boundary between the mask section 26b and an opening 26a, to a simulation result based on a side etching profile 27a, and reflects an influence of a round etching whose etching speed varies depending on a corner part that the etching object has, to the simulation result using a round etching profile 27b.

Description

  The present invention relates to an etching simulation apparatus, an etching simulation method, a program, and a storage medium. More specifically, the present invention relates to an etching simulation apparatus, an etching simulation method, a program, and a storage medium that perform a simulation for manufacturing an embossed plate by an etching technique using mask data.

  Conventionally, an embossed plate is used to manufacture a sheet such as wallpaper having a texture of a texture such as a fabric. The embossed plate reproduces the textured surface irregularities, and if this is used to emboss a desired sheet of paper, resin, synthetic leather, metal, etc., the textured surface irregularities can be obtained. It is possible to reproduce and obtain a sheet having a texture of texture.

  As a method for artificially reproducing the uneven shape of the texture surface on the surface of the embossed plate, there is a method by multi-stage etching. Multi-stage etching is a technique in which a multi-stage shape is artificially formed on the surface of an embossed plate by performing etching a maximum of about 10 times.

  For example, as shown in FIG. 15 (a), a resist 53 is coated on the surface 51 of an embossed plate such as a metal to be etched, and as shown in FIG. 15 (b), a predetermined position (exposure portion 55) is formed. Irradiate with a laser beam. Then, as shown in FIG. 15C, the resist 53 of the exposure portion 55 is cured. Thereafter, a cleaning process is performed to remove the uncured resist 53, whereby a pattern of the cured resist 53 is formed. Thereafter, when a corrosive liquid is applied to the surface 51 of the embossed plate, the exposed metal surface is corroded and recessed as shown in FIG. Finally, the remaining resist 53 is removed by the cleaning process, and an uneven structure corresponding to the pattern of the resist 53 is formed on the surface 51 of the embossed plate as shown in FIG.

  By repeating the resist coating, exposure processing, cleaning processing (first time), corrosion processing, and cleaning processing (second time) a plurality of times according to the shape of the surface 51 of the target embossing plate while changing the resist pattern. As shown in FIG. 16, irregularities having different depths are formed on the surface 51 of the embossed plate. In FIG. 16, the etching is first performed from a shallow position of the embossed plate, and the etching is performed a plurality of times so as to dig up the inside stepwise.

  At this time, in order to irradiate a predetermined position with a laser and form a resist pattern, mask data for determining the presence / absence of exposure at the predetermined position is used. The mask data is generated, for example, by binarizing height field data, which is data representing texture height information (uneven shape on the surface) with gradation values, using a predetermined threshold value. Examples of generating mask data from height field data such as fabric are disclosed in Patent Documents 1, 2, and 3.

JP 2001-58459 A JP 2001-179825 A JP 2001-113891 A

  By the way, in said etching process, there exists a subject by which the shape which cannot be anticipated from mask data (resist film pattern) is formed on an embossed plate. This is because of side etching and round etching.

  Side etching refers to a phenomenon in which unintended etching occurs inside the resist film. For example, as shown in FIG. 17A, when a certain depth is etched on the surface 51 of the embossed plate by the pattern of the resist 53, the resist film side portion 55a is also etched, and an unintended shape is formed.

  The term “round etching” refers to a phenomenon in which the shape is rounded as a whole after etching for a predetermined time by changing the etching rate at the corner of the etching target. For example, as shown in FIG. 17 (b), when there is a portion 55b protruding on the surface 51 of the embossed plate, the portion 55b is etched faster, and after etching for a predetermined time, the corrosion depth of the portion 55b is at other locations. It becomes larger than the depth of corrosion, and the shape is rounded as a whole.

  Conventionally, for the above effects, when creating mask data, etching was performed using the mask data once created, the design was confirmed by the etching result, and whether appropriate mask data was created, Etching is actually time-consuming, which increases the production cost of mask data.

  The present invention has been made in view of the above-described problems, and performs an etching simulation that accurately reflects changes in the shape of an embossed plate, thereby reducing an etching simulation apparatus that can reduce the cost when creating mask data. The purpose is to provide.

  A first invention for achieving the above-described object is an etching simulation apparatus for performing a simulation for manufacturing an embossed plate by an etching technique using mask data, wherein the height information of the texture is represented by gradation values. Represents the relationship between the mask depth data generated by binarizing the height field data of the texture with the threshold value and the distance from the boundary between the opening portion and the mask portion toward the mask portion and the corrosion depth. Based on the side etching profile, with respect to the height field data that represents the height information of the etching target as a gradation value, a predetermined corrosion depth is subtracted from the gradation value at a position corresponding to the opening of the mask data, and the mask portion The distance from the boundary based on the side etching profile at the corresponding location By subtracting the corresponding corrosion depth from the tone value is an etching simulation apparatus characterized by performing an etching simulation to generate the etching target height field data after the etching, reflecting the influence of side etching.

  With the above configuration, an accurate etching simulation can be performed in consideration of the influence of side etching in which etching proceeds on the mask side during etching. Thereby, the design can be confirmed without actually performing etching at the time of creating mask data, and the cost of creating mask data is reduced.

  In the etching simulation, with respect to the influence of the round etching that changes the etching speed at the corner of the etching target, the angle formed by one point on the etching target with a predetermined point on the etching target on both sides and the angle are equal to each other. The influence of the round etching was reflected by weighting the corrosion depth using the round etching profile indicating the relationship between the inclination angle with respect to the vertical direction of the line segment to be divided and the degree of etching progress in the one place. Height field data to be etched after etching is generated.

  With this configuration, it is possible to perform a more accurate etching simulation that takes into account the effect of round etching that changes the etching rate at the corners during etching, and thus the design can be confirmed in more detail when creating mask data. .

  Different etching profiles are determined depending on at least one of the type, concentration, temperature, and material to be etched.

  With such a configuration, it is possible to perform a more accurate etching simulation considering the influence of the etching environment by using different data for the etching profile according to a number of conditions. The design can be confirmed.

  A second invention for achieving the above-mentioned object is an etching simulation method by an etching simulation apparatus for performing a simulation for manufacturing an embossed plate by an etching technique using mask data, wherein the etching simulation apparatus has a high texture. The height data of the texture, which is the data representing the depth information, is generated by binarizing the threshold value with the threshold value, and the mask data having the opening portion and the mask portion, and from the boundary between the opening portion and the mask portion toward the mask portion side. Based on the side etching profile that represents the relationship between the distance and the corrosion depth, height field data that represents the height information of the object to be etched as gradation values, the predetermined corrosion depth is set at the level corresponding to the opening of the mask data. Subtract from key value to support mask Etching to generate the height field data of the etching target after etching reflecting the influence of side etching by subtracting the corrosion depth according to the distance from the boundary based on the side etching profile from the gradation value An etching simulation method characterized by performing a simulation.

  In the etching simulation, with respect to the influence of the round etching that changes the etching speed at the corner of the etching target, the angle formed by one point on the etching target with a predetermined point on the etching target on both sides and the angle are equal to each other. The influence of the round etching was reflected by weighting the corrosion depth using the round etching profile indicating the relationship between the inclination angle with respect to the vertical direction of the line segment to be divided and the degree of etching progress in the one place. Height field data to be etched after etching is generated.

  Different etching profiles are determined depending on at least one of the type, concentration, temperature, and material to be etched.

  A third invention for achieving the above object is a program for causing a computer to function as the etching simulation apparatus of the first invention.

  A fourth invention for achieving the above object is a storage medium storing a program for causing a computer to function as the etching simulation apparatus of the first invention.

  According to the present invention, it is possible to provide an etching simulation apparatus and the like that can reduce the cost for creating mask data by performing an etching simulation that accurately reflects a change in the shape of the embossed plate.

The figure which shows an example of the hardware constitutions of the etching simulation apparatus 1 The figure which shows an example of a function structure of the etching simulation apparatus 1 Flow chart showing generation of mask data 26 The figure shown about the production | generation of the mask data 26 Flow chart for etching simulation Flow chart for etching simulation The figure shown about creation of distance data 30 The figure shown about the side etching profile 27a Diagram showing calculation of etching data 46 Diagram showing round etching profile 27b Diagram showing etching simulation considering the effect of round etching Figure showing an example of mask data Figure showing etching simulation results Figure showing etching simulation results Diagram showing etching Diagram showing changes in shape of embossed plate Diagram showing side etching and round etching

Hereinafter, embodiments of the etching simulation apparatus and the like of the present invention will be described with reference to the drawings.
First, the etching simulation apparatus of this embodiment will be described with reference to FIGS.

  FIG. 1 is a diagram illustrating an example of a hardware configuration of the etching simulation apparatus 1. As shown in FIG. 1, the etching simulation apparatus 1 includes a control unit 11, a storage unit 12, a media input / output unit 13, a peripheral device I / F unit 14, a communication unit 15, an input unit 16, a display unit 17 and the like on a bus 18. It is connected and configured.

  The control unit 11 includes a CPU, ROM, RAM, and the like. The CPU calls a program stored in the storage unit 12, ROM, recording medium or the like to a work memory area on the RAM and executes it, and drives and controls each unit connected via the bus 18. The ROM permanently holds a computer boot program, a program such as BIOS, data, and the like. The RAM temporarily stores the loaded program and data, and includes a work area used by the control unit 11 to perform various processes.

  The storage unit 12 is, for example, a hard disk drive, and stores a program executed by the control unit 11, data necessary for program execution, an OS (operating system), and the like.

The media input / output unit 13 is a media input / output device such as a floppy (registered trademark) disk drive, CD drive, DVD drive, or MO drive, and performs data input / output.
The peripheral device I / F (interface) unit 14 is a port for connecting a peripheral device, and transmits / receives data to / from the peripheral device via the peripheral device I / F unit 14. The peripheral device I / F unit 14 is configured by a USB or the like, and usually includes a plurality of peripheral devices I / F. The connection form with the peripheral device may be wired or wireless.

The communication unit 15 includes a communication control device, a communication port, and the like, and is a communication interface that mediates communication with a network or the like, and performs communication control.
The input unit 16 is an input device such as a keyboard, a pointing device such as a mouse, or a numeric keypad, and outputs input data to the control unit 11.

The display unit 17 includes a display device such as a liquid crystal panel or a CRT monitor, and a logic circuit (video adapter or the like) for executing display processing in cooperation with the display device, and is input under the control of the control unit 11. Display information is displayed on a display device.
The bus 18 is a path that mediates transmission / reception of control signals, data signals, and the like between the devices.

  Next, the functional configuration of the etching simulation apparatus 1 will be described with reference to FIG. As shown in FIG. 2, the etching simulation apparatus 1 includes a mask data generation unit 21, an etching simulation unit 23, and the like. The storage unit 12 stores height field data (texture) 25, mask data 26, an etching profile 27, a corrosion depth. Data 28 and height field data (etching target) 29 are stored.

  The mask data generating means 21 is one from height field data (texture) 25 according to the parameters used by the control unit 11 of the etching simulation apparatus 1 for mask data generation or the like input by the user via the input unit 16 or the like. The above mask data 26 is generated and stored in the storage unit 12. The input parameters are a threshold value, the number of threshold values, and the like.

  In the etching simulation means 23, the control unit 11 of the etching simulation apparatus 1 performs an etching simulation on the height field data (etching target) 29 using the mask data 26, the etching profile 27, and the corrosion depth data 28, and after etching. Height field data (etching target) 29 is created and stored in the storage unit 12.

  The height field data (texture) 25 is grayscale image data representing, for example, 256 gradation values on the textured surface shape (height) of the texture surface, and the target for creating an embossed plate by etching. This is a shape. The height field data 25 is input in advance or at the start of processing in the etching simulation apparatus 1 and stored in the storage unit 12 or the like.

  The mask data 26 is data indicating a location where the etching target is etched (opening portion) and a location where the etching is not performed (mask portion). In actual etching, a resist film is formed on an object to be etched by irradiating the coated resist with a laser at a location corresponding to the mask portion to cure.

  The etching profile 27 is data relating to detailed changes in the shape of an etching target during actual etching, and includes a side etching profile 27a and a round etching profile 27b described later. The side etching profile 27a expresses the influence of the above-described side etching in which etching proceeds on the mask portion side during etching. The round etching profile 27b expresses the influence of the aforementioned round etching in which the etching rate changes at the corners to be etched during etching.

  The corrosion depth data 28 defines a predetermined corrosion depth corresponding to a threshold value when generating mask data. A threshold value used for generation of the mask data 26 and a predetermined corrosion depth in one etching using the mask data 26 are determined in association with each other.

  The height field data (etching target) 29 is height field data representing information on the uneven shape (height) of the surface of the embossed plate to be etched. By repeating the etching simulation, the surface of the initial height field data (etching target) 29 becomes a concave shape according to the mask data 26, and approaches the height field data (texture) 25 (the upside down shape).

  Next, the procedure of the etching simulation process by the etching simulation apparatus 1 will be described with reference to FIGS.

  First, generation of mask data 26 using height field data (texture) 25 will be described with reference to FIGS.

  As shown in FIG. 3, first, parameters used for generating the mask data 26 such as a threshold value and the number of threshold values for binarization are input via the input unit 16 or the like (step S11).

  The control unit 11 of the etching simulation apparatus 1 binarizes the height field data (texture) 25 with each threshold value according to the parameters such as the threshold value input in step S11, and generates mask data 26 (step). S12). The generated mask data 26 is stored in the storage unit 12 of the etching simulation apparatus 1. Alternatively, it may be output to a recording medium via the media input / output unit 13.

  FIG. 4 is a diagram showing generation of the mask data 26. In the example shown in FIG. 4A, four threshold values 31 (31-1 to 31-4 in order from the highest) for the height field data (texture) 25 are shown. And binarization is performed based on whether or not each threshold is exceeded. The threshold value and the like are not limited to this, and may be determined and input as appropriate in step S11 according to the purpose.

  FIG. 4B is an example of the mask data 26 generated in this way. The mask data 26-1 is binarized by determining whether the height field data (texture) 25 is equal to or higher than the threshold value 31-1. Reference numeral 26a denotes an opening which is an area equal to or higher than the threshold 31-1, and reference numeral 26b denotes a mask which is an area lower than the threshold 31-1. Similar processing is performed for each threshold value 31 (31-1 to 31-4), and mask data 26 (26-1 to 26-4) is generated for the height field data (texture) 25 by the number of threshold values.

  Next, an etching simulation is performed on height field data (etching target) 29 using the mask data 26, the etching profile 27, and the corrosion depth data 28 in accordance with a user instruction. This etching simulation will be described with reference to FIGS.

  As shown in FIG. 5, in the etching simulation, first, the control unit 11 of the etching simulation apparatus 1 acquires the mask data 26 stored in the storage unit 12 (step S21). For example, the above-described mask data 26-1 is acquired for the first time.

  And the control part 11 calculates the etching data 46 which shows the corrosion depth at the time of etching using the mask data 26, the side etching profile 27a, and the corrosion depth data 28 (step S22).

  In step S22, as shown in FIG. 6, first, the distance from the boundary between the mask part 26b and the opening 26a in each pixel (cell) of the mask data 26 acquired in step S21 is calculated, and the distance data 30 is created. (Step S221).

  To create the distance data 30, first, as shown in FIG. 7A, the distance data 30 having the same size as the mask data 26 is prepared, and the values of all the cells are initialized to the maximum values. To do. In FIG. 7, the white numerals are the cells corresponding to the mask portion 26b in the mask data 26, and the other portions are the cells corresponding to the opening 26a.

  Next, as shown in FIG. 7B, the distance 0 is stored in the value of the cell corresponding to the boundary between the mask part 26b and the opening part 26a in the mask data 26.

Next, as shown in FIG. 7C, the distance data 30 is scanned, and the value of each cell is set to the value stored in the cell near the surrounding 8 and the distance to the cell near the surrounding 8 (up, down, left and right are 1, the diagonal direction is updated with the smallest value among the values obtained by adding √2) for each cell in the vicinity of the surrounding eight.
FIG. 7C shows the result of performing the above processing while scanning from left to right for the cells in the first row from the top.
When this process is repeated while changing the scanning direction, distance data 30 indicating the distance from the boundary between the mask portion 26b and the opening portion 26a in the mask data 26 is created as shown in FIG. 7D.

  The distance data 30 is used after being converted into an actual distance. For example, when the resolution of the mask data 26 is 508 dpi, the size of one pixel corresponds to 50 μm. At this time, a value obtained by multiplying the value stored in each cell of the distance data 30 by 50 μm is the distance from the boundary. Used as

  Returning to FIG. 6, next, the control unit 11 of the etching simulation apparatus 1 uses the corrosion depth data 28, the distance data 30, and the side etching profile 27 a to perform etching data 46 when etching is performed using the mask data 26. Is calculated (step S222).

  FIG. 8 is a diagram illustrating the side etching profile 27a. The side etching profile 27a represents the influence of the side etching described above, and particularly represents the shape of the etching target 45 on the mask portion 26b side from the boundary between the mask portion 26b and the opening portion 26a when etching is performed for a certain period of time. Is.

In this embodiment, the side etching profile 27a corresponds to the etching depth 45 shown in FIG. 8A with respect to the corrosion depth h at the location corresponding to the opening 26a (the boundary between the opening 26a and the mask 26b) of the mask data 26. shall be expressed as the openings 26a and the horizontal distance _{a n} corrosion depth _{h n} relationship, for example, FIG. 8 directed from the boundary of the mask portion 26b in the mask part 26b side (b). The side etching profile 27a is determined for each predetermined corrosion depth h.
Note that the side etching profile 27a is not limited to this, and may be any shape that represents the shape of the etching target 45 on the mask portion 26b side when etching is performed. It is possible to accurately reflect the influence of side etching.

  FIG. 9 is a diagram illustrating calculation of the etching data 46 using the side etching profile 27a. In the present embodiment, the corrosion depth h in one etching using the mask data 26 is acquired based on the corrosion depth data 28 according to the threshold value input in the step S11 and used to generate the mask data 26. Etching data 46 is created when etching for one time (one step) using one mask data 26 is performed. The etching data 46 is data in an array having the same size as the mask data 26.

  At this time, as the etching data 46 of the portion corresponding to the opening 26a, a corrosion depth h (for example, “30”) for one time is written. On the other hand, as the corrosion depth of the portion corresponding to the mask portion 26b, the distance data 30 and the side etching profile 27a determined in advance corresponding to the corrosion depth h are used to determine the corrosion depth from the boundary between the opening portion 26a and the mask portion 26b. A value corresponding to the distance is written (for example, “15”).

  As described above, in step S22 of FIG. 5, the etching data 46 in consideration of the influence of side etching in one etching is obtained.

  Next, the control unit 11 of the etching simulation apparatus 1 acquires height field data (etching target) 29, which is height field data to be etched (step S23).

Subsequently, the control unit 11 of the etching simulation apparatus 1 performs an etching simulation using the etching data 46 and the round etching profile 27b (step S24).
At this time, the corrosion depth previously calculated using the mask data 26 and the side etching profile 27a is subtracted from the gradation value of the height field data (etching target) 29. That is, a predetermined corrosion depth h is subtracted at a location corresponding to the opening 26a, and according to a horizontal distance from the boundary between the opening 26a and the mask 26b based on the side etching profile 27a at a location corresponding to the mask 26b. Subtract the depth of corrosion.
At this time, the round etching profile 27b is used to reflect the influence of the round etching on the corrosion depth.

FIG. 10 is a diagram showing the round etching profile 27b. The round etching profile 27b represents the influence of the change in the etching rate due to the corner of the etching target 45 or the like.
Round etch profile 27b, the angle of one point on the etching object forms with the portion of the sides at a predetermined distance, i.e. point P ₀ on the etched 45 in FIG. 10 (a) from the point P ₀ to the distance b A numerical value represents the relationship between the angle θ formed between the points P ₁ and P ₂ on both sides, the combination of the inclination angle α with respect to the vertical direction of the line segment that bisects the angle θ (θ, α), and the degree of etching progress. FIG. 10B shows an example.

In the present embodiment, as the round etch profile 27b, as shown in FIG. 10 (b), the angle θ is 180 °, the angle α is 0 ° reference case (point P ₀ around the surface to be etched horizontally) of As a data representing the change rate of the corrosion depth for the combination of (θ, α). In the round etching profile 27b, the etching rate of the protrusion (θ <180 °) is larger than that of the flat portion (change rate is +), and conversely, the etching rate of the concave portion (θ> 180 °) is higher than that of the flat portion. It shows that it becomes small (change rate is-). Furthermore, it is shown that the change in the etching rate due to the angle θ is emphasized or increased as the inclination angle α is larger.
Note that the round etching profile 27b is not limited to this, and it is sufficient that the difference in the degree of etching progress depending on the shape of the object to be etched can be represented. The impact can be reflected.

As described above, the controller 11 of the etching simulation apparatus 1 subtracts the corrosion depth of the etching data 46 calculated previously for each corresponding pixel (cell) for the height field data (etching target) 29. At this time, the value of the corrosion depth to be subtracted is weighted using the round etching profile 27b to reflect the influence of the round etching.
In this embodiment, the value of the corrosion depth of the etching data 46 is equally divided into a plurality, and the progress of one etching is simulated in a plurality of steps to create height field data. In the example described below, the value of the corrosion depth is equally divided into three, and the progress of etching for one time is simulated in three steps.

  FIG. 11 is a diagram showing an example of an etching simulation considering the influence of round etching. In the height field data (etching target) 29 shown in FIG. 11A, a protruding portion 291 exists.

  In the etching simulation, the three-divided value of the corrosion depth (see FIG. 9) of the etching data 46 obtained previously is subtracted from the gradation value of the height field data (etching target) 29 for each corresponding pixel. The angle θ and the angle α are calculated for each pixel of the height field data (etching target) 29, and changes corresponding to the angle θ and the angle α in the circular etching profile 27b shown in FIG. The weight is multiplied by the rate, and the value obtained by subtracting the corrosion depth after weighting is written.

An example of the height field data (etching target) 29 after the etching in the first step is the height field data (etching target) 29 of FIG.
In the flat portion (x1) of the height field data (etching target) 29 shown in FIG. 11A, the three-divided value (for example, “10”) of the corrosion depth of the etching data 46 in the opening 26a is subtracted. Since this is a flat portion, the change rate of the corrosion depth by the round etching profile 27b at this time is 0%, and the gradation value of the portion x1 in FIG.
On the other hand, in the case of the protruding portion (x2), the corrosion depth weighted by the round etching profile 27b is subtracted from the three equally divided values of the etching depth of the etching data 46 in the opening 26a. The rate of change increases, the corrosion depth after weighting increases (for example, “10” → “15”), and the gradation value of the portion x2 in FIG. 11B changes from 60 to 45. Thus, the depth of corrosion at the protrusion is larger than that of the flat portion, and the influence of the aforementioned round etching is expressed.
In addition, the gradation value is also subtracted at a location corresponding to the mask portion 26b, thereby expressing the influence of side etching.

  The height field data (etching target) 29 after the etching in the first step created in this way is the height field data (etching target) before etching in the etching simulation of the next step performed in the same manner as described above. 29 is used.

Thus, the height field data (etching target) 29 in each step is calculated as shown in FIGS. 11B, 11C, and 11D. As described above, since one-time (one-stage) etching is simulated in three steps, FIG. 11 (d) is a calculation of height field data (etching target) 29 after one-time etching. . Each height field data (etching target) 29 is stored in the storage unit 12 or the like.
In the above example, the progress of etching for one time is simulated in 3 steps, and the height field data (etching target) 29 in each step is generated. However, the number of steps to be simulated is not limited to this. Alternatively, the progress of one etching may be simulated in one step.

In this way, height field data (etching target) 29 after one etching using one mask data 26 is generated (step S25). The height field data (etching target) 29 becomes the initial shape of the height field data (etching target) 29 in the next simulation performed by changing the mask data 26.
The above process is repeated for all the mask data 26 (No in step S26). If the above process is performed for all the mask data 26 (Yes in step S26), the etching simulation is terminated.

  The etched shape varies greatly depending on the type / concentration / temperature of the etchant and the type of metal that is the material of the embossed plate to be etched. For example, in the case where etching solutions having different concentrations are used, even if etching is performed for the same time, a difference occurs in the progress, so that the shapes are different. Therefore, as the above-mentioned side etching profile 27a and round etching profile 27b, different data corresponding to this is determined and stored for each etching environment including the type, concentration and temperature of the etching solution and the type of metal of the embossed plate. The data stored in the unit 12 is selected and used according to the assumed etching environment.

Hereinafter, an example of simulation using the above method will be described with reference to FIGS. FIG. 12 shows an example of the input mask data. Here, the mask portion is black and the opening portion is white.
FIG. 12A shows mask data in which the upper left portion is a small mask portion, and FIG. 12B shows mask data in which the central portion is a large mask portion. Both are data having a size of 200 × 200 pixels and a resolution of 508 dpi.

FIG. 13A is a diagram showing a result of performing an etching simulation for performing etching on a flat etching target using the mask data shown in FIG. As an etching simulation, the depth of corrosion was 500 μm, and one-step etching was performed. FIG. 13B is an enlarged view showing an etching simulation result in the upper right portion of the mask data. In FIGS. 13A and 13B, the corrosion depth is shown in gray scale, black indicates a depth of 0 μm, and white indicates a depth of 500 μm. FIG. 13 (c) is a diagram showing mask data of a portion corresponding to FIG. 13 (b).
From FIGS. 13A and 13B, it can be seen that the influence of side etching appears in the vicinity of the boundary between the opening and the mask, and the shape changes smoothly.

Further, in FIG. 14, etching is performed on a flat etching target using the mask data of FIG. 12A for the first stage etching and the mask data of FIG. 12B for the second stage etching. It is a figure which shows the result of having performed simulation. In the etching simulation, the first-stage corrosion depth using the mask data of FIG. 12A is 200 μm, the second-stage corrosion depth using the mask data of FIG. Went.
In FIG. 14, the depth of corrosion is shown in gray scale, black indicates a depth of 0 μm, and white indicates a depth of 300 μm. In FIG. 14, the influence of side etching at the boundary between the opening and the mask portion in the mask data and the round etching at the time of the second-stage etching are shown, and it can be seen that the shape changes smoothly. .

As described above, according to the embodiment of the present invention, by using an etching profile, the influence of side etching in which etching proceeds on the mask side at the time of etching or the round etching in which the etching rate changes at the corner of the etching target. It is possible to perform an accurate etching simulation considering the influence. Thereby, the design can be confirmed without actually performing etching at the time of creating mask data, and the cost of creating mask data is reduced.
In addition, by using different data for the etching profile according to various conditions, it is possible to perform an etching simulation that further considers the influence of the etching environment, such as the type / concentration / temperature of the etchant, the type of metal of the embossed plate, etc. Thus, the design can be confirmed in more detail when the mask data is created.

  The preferred embodiments of the etching simulation apparatus and the like according to the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It will be apparent to those skilled in the art that various changes or modifications can be conceived within the scope of the technical idea disclosed in the present application, and these naturally belong to the technical scope of the present invention. Understood.

DESCRIPTION OF SYMBOLS 1 ... Etching simulation apparatus 21 ... Mask data generation means 23 ... Etching simulation means 25 ... Height field data (texture)
26 ......... Mask data 27 ......... Etching profile 27a ......... Side etching profile 27b ... ... Round etching profile 28 ... ... Corrosion depth data 29 ... ... Height field data (etching target)

Claims (8)

An etching simulation apparatus that performs a simulation of manufacturing an embossed plate by an etching technique using mask data,
Mask data having an opening portion and a mask portion generated by binarizing the texture height field data, which is data representing the height information of the texture with gradation values, using a threshold value, and the mask portion from the boundary between the opening portion and the mask portion. Based on the side etching profile that represents the relationship between the distance to the side and the depth of corrosion, height field data that represents the height information of the etching target as gradation values, the predetermined depth of corrosion at the location corresponding to the opening of the mask data Is subtracted from the gradation value, and the influence of side etching is reflected by subtracting the corrosion depth corresponding to the distance from the boundary based on the side etching profile from the gradation value at the position corresponding to the mask portion. Etching simulation to generate height field data of the etching target after etching Etching simulation apparatus and performs down.   In the etching simulation, with respect to the influence of the round etching that changes the etching speed at the corner of the etching target, the angle formed by one point on the etching target with a predetermined point on the etching target on both sides and the angle are equal to each other. The influence of the round etching was reflected by weighting the corrosion depth using the round etching profile indicating the relationship between the inclination angle with respect to the vertical direction of the line segment to be divided and the degree of etching progress in the one place. 2. The etching simulation apparatus according to claim 1, wherein height field data of an etching target after etching is generated.   The etching simulation apparatus according to claim 1, wherein different etching profiles are determined according to at least one of an etchant type, a concentration, a temperature, and a material to be etched. An etching simulation method by an etching simulation apparatus that performs a simulation of manufacturing an embossed plate by an etching technique using mask data,
Etching simulation equipment
Mask data having an opening portion and a mask portion generated by binarizing the texture height field data, which is data representing the height information of the texture with gradation values, using a threshold value, and the mask portion from the boundary between the opening portion and the mask portion. Based on the side etching profile that represents the relationship between the distance to the side and the depth of corrosion, height field data that represents the height information of the etching target as gradation values, the predetermined depth of corrosion at the location corresponding to the opening of the mask data Is subtracted from the gradation value, and the influence of side etching is reflected by subtracting the corrosion depth corresponding to the distance from the boundary based on the side etching profile from the gradation value at the position corresponding to the mask portion. Etching simulation to generate height field data of the etching target after etching Etching simulation method and performing down.   In the etching simulation, with respect to the influence of the round etching that changes the etching speed at the corner of the etching target, the angle formed by one point on the etching target with a predetermined point on the etching target on both sides and the angle are equal to each other. The influence of the round etching was reflected by weighting the corrosion depth using the round etching profile indicating the relationship between the inclination angle with respect to the vertical direction of the line segment to be divided and the degree of etching progress in the one place. 5. The etching simulation method according to claim 4, wherein height field data of an etching target after etching is generated.   6. The etching simulation method according to claim 4, wherein the etching profile is determined differently according to at least one of an etching solution type, concentration, temperature, and a material to be etched.   The program which makes a computer function as an etching simulation apparatus in any one of Claims 1-3.   A storage medium storing a program that causes a computer to function as the etching simulation apparatus according to any one of claims 1 to 3.