JP2012186968A - Power inverter apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power inverter apparatus capable of accurately estimating a temperature without influence of characteristic variations of a switching element.SOLUTION: A microcomputer 124 finds a difference ΔR between on-resistances of an IGBT 110e and an IGBT 110f from on-resistances R0 and R1 stored in a memory 123 of, respectively, the IGBTs 110e and 110f. The microcomputer 124 finds, from data indicating relationship between on-resistance difference of the IGBTs stored in the memory 123 and a temperature difference associated with the on-resistance difference as well as the found on-resistance difference ΔR, a temperature difference ΔT associated with the on-resistance difference ΔR using the on-resistance R0 of the IGBT 110e as a reference. Further, the microcomputer 124 adds the found temperature difference ΔT to a detected temperature of the IGBT 110e to estimate a temperature of the IGBT 110f not detected. Therefore, the temperature can be accurately estimated without influence of the characteristic variations of the IGBT.

Description

  The present invention relates to a power conversion device including a plurality of switching elements and a temperature detection element that detects the temperature of the switching elements.

  2. Description of the Related Art Conventionally, for example, there is a semiconductor module disclosed in Patent Document 1 as a power conversion device including a plurality of switching elements and a temperature detection element that detects the temperature of the switching elements.

  This semiconductor module includes a plurality of IGBT elements, a temperature detection diode, and temperature estimation means. The temperature detection diode detects the temperature of one selected IGBT element. The temperature estimation means detects the temperature based on correlation data relating to a preset temperature of the IGBT element that detects the temperature and a specific IGBT element that does not detect the temperature, and the detected temperature of the IGBT element. The temperature of a specific IGBT element that has not been estimated is estimated.

Japanese Patent No. 4032746

  By the way, the characteristics of the IGBT elements vary, and the temperature varies accordingly. Therefore, in order to accurately estimate the temperature of the IGBT element, correlation data must be set according to the characteristics. However, the correlation data is fixed. For this reason, there is a problem that the temperature of the IGBT element cannot be accurately estimated.

  This invention is made | formed in view of such a situation, and it aims at providing the power converter device which can estimate temperature accurately, without being influenced by the dispersion | variation in the characteristic of a switching element.

  Therefore, as a result of intensive research and trial and error to solve this problem, the present inventors have not detected the temperature based on the characteristic information of the plurality of switching elements stored in the storage unit. By estimating the temperature of the switching element, it has been found that the temperature can be accurately estimated without being affected by variations in the characteristics of the switching element, and the present invention has been completed.

  That is, the power conversion device according to claim 1 includes a plurality of switching elements, a temperature detection element that detects the temperature of one switching element, and a switching that does not detect the temperature based on a detection result of the temperature detection element. In the power conversion device including the temperature estimation circuit that estimates the temperature of the element, the temperature estimation circuit includes a storage unit that stores the characteristic information of each switching element, and the detection result of the temperature detection element and the storage unit Based on the stored characteristic information, the temperature of the switching element not detecting the temperature is estimated. According to this configuration, the temperature of the switching element not detecting the temperature is estimated based on the characteristic information of the switching element. Therefore, the temperature can be accurately estimated without being affected by variations in the characteristics of the switching elements.

  The power conversion device according to claim 2, wherein the characteristic information is an on-resistance, and the temperature estimation circuit detects the temperature and the switching element that detects the temperature based on the on-resistance stored in the storage unit. A difference between the on-resistances of the switching elements that have not been obtained is obtained, and the temperature is estimated based on the detection result of the temperature detection element and the obtained difference between the on-resistances. According to this configuration, the temperature of the switching element in the steady state after the switching element is turned on varies depending on the on-resistance of the switching element. When the on-resistance of the switching element is small, the loss in the steady state is small, and accordingly, the temperature rise of the switching element is also small. On the other hand, when the on-resistance of the switching element is large, the loss in the steady state increases, and accordingly, the temperature rise of the switching element also increases. Therefore, by estimating the temperature based on the difference in on-resistance between the switching element that detects the temperature and the switching element that does not detect the temperature, the temperature is accurately measured without being affected by variations in the characteristics of the switching element. Can be estimated well.

  The power conversion device according to claim 3, wherein the temperature estimation circuit obtains a temperature difference associated therewith from the obtained difference in on-resistance, and estimates the temperature based on the detection result of the temperature detection element and the obtained temperature difference. Features. According to this configuration, the temperature of the switching element that has not detected the temperature can be reliably estimated.

  In the power conversion device according to claim 4, the storage unit stores data indicating a relationship between the on-resistance difference and the accompanying temperature difference, and the temperature estimation circuit includes the on-resistance difference stored in the storage unit. And the temperature difference associated therewith from the obtained difference in on-resistance based on the data indicating the relationship between the temperature difference and the associated temperature difference. According to this configuration, the temperature difference associated with the difference in on-resistance can be reliably obtained.

  In the power conversion device according to claim 5, the characteristic information is an input capacity of the control terminal, and the temperature estimation circuit detects the temperature based on the input capacity of the control terminal stored in the storage unit. The difference between the input capacitances of the control terminals of the switching elements and the switching elements not detecting the temperature is obtained, and the temperature is estimated based on the difference between the detection results of the temperature detection elements and the obtained input capacitance of the control terminals. . According to this configuration, the temperature of the switching element in a transient state when the switching element is turned on from off varies depending on the switching speed of the switching element. When the switching speed is high, the loss in the transient state is reduced, and accordingly, the temperature rise of the switching element is also reduced. On the other hand, when the switching speed is slow, the loss in the transient state increases, and accordingly, the temperature rise of the switching element also increases. By the way, when the input capacity of the control terminal of the switching element is small, the charging time is shortened and the switching speed is increased. On the other hand, when the input capacity of the control terminal of the switching element is large, the charging time becomes long and the switching speed becomes slow. Therefore, by estimating the temperature based on the difference between the input capacitances of the control terminals of the switching element that detects the temperature and the switching element that does not detect the temperature, without being affected by variations in the characteristics of the switching element, The temperature can be accurately estimated.

  The power conversion device according to claim 6, wherein the temperature estimation circuit obtains a temperature difference associated therewith from the obtained difference in the input capacitance of the control terminal, and estimates the temperature based on the detection result of the temperature detection element and the obtained temperature difference. It is characterized by doing. According to this configuration, the temperature of the switching element that has not detected the temperature can be reliably estimated.

  In the power conversion device according to claim 7, the storage unit stores data indicating a relationship between a difference in input capacitance of the control terminal and a temperature difference associated therewith, and the temperature estimation circuit is a control stored in the storage unit. Based on the difference between the input capacitances of the terminals and the data indicating the temperature difference associated therewith, the temperature difference associated therewith is obtained from the difference between the input capacitances of the control terminals obtained. According to this configuration, the temperature difference associated with the difference in input capacitance between the control terminals can be reliably obtained.

  The power conversion device according to claim 8, wherein the characteristic information is an amount of charge that can be accumulated between the terminals, and the temperature estimation circuit detects the temperature and the switching element that detects the temperature stored in the storage unit. A difference in the storable charge amount between the terminals of the switching elements that are not present is obtained, and the temperature is estimated based on the detection result of the temperature detection element and the obtained difference in the storable charge amount between the terminals. According to this configuration, the temperature of the switching element in a transient state when the switching element is turned on from off varies depending on the switching speed of the switching element. When the switching speed is high, the loss in the transient state is reduced, and accordingly, the temperature rise of the switching element is also reduced. On the other hand, when the switching speed is slow, the loss in the transient state increases, and accordingly, the temperature rise of the switching element also increases. By the way, if the amount of charge that can be stored between the terminals of the switching element is small, the charge storage time is shortened and the switching speed is increased. On the other hand, if the amount of charge that can be stored between the terminals of the switching element is large, the charge storage time becomes long and the switching speed becomes slow. For this reason, the temperature is estimated based on the difference in the amount of charge that can be accumulated between the switching element that detects the temperature and the terminal of the switching element that does not detect the temperature. Temperature can be estimated accurately.

  The power conversion device according to claim 9, wherein the temperature estimation circuit obtains a temperature difference associated therewith from the difference in the amount of charge that can be accumulated between the obtained terminals, and the temperature based on the detection result of the temperature detection element and the obtained temperature difference. Is estimated. According to this configuration, the temperature of the switching element that has not detected the temperature can be reliably estimated.

  In the power conversion device according to claim 10, the storage unit stores data indicating a relationship between a difference in charge amount that can be accumulated between the terminals and a temperature difference associated therewith, and the temperature estimation circuit is stored in the storage unit. On the basis of the data indicating the relationship between the difference in the amount of charge that can be accumulated between the terminals and the temperature difference associated therewith, the temperature difference associated therewith is obtained from the difference in the amount of charge that can be accumulated between the obtained terminals. According to this configuration, it is possible to reliably determine the temperature difference associated with the difference in the amount of charge that can be accumulated between the terminals.

  In the power conversion device according to claim 11, the characteristic information is a difference in loss between the switching element that detects the temperature and the switching element that does not detect the temperature, and the temperature estimation circuit detects the detection result of the temperature detection element. And the temperature is estimated based on a difference in loss between the switching element detecting the temperature stored in the storage unit and the switching element not detecting the temperature. According to this configuration, the temperature can be accurately estimated without being affected by variations in the characteristics of the switching elements.

It is a circuit diagram of the motor control device in a 1st embodiment. It is a circuit diagram of the control apparatus in FIG. It is a graph for demonstrating the temperature estimation operation | movement in 1st Embodiment. It is a graph for demonstrating the temperature estimation operation | movement in 2nd Embodiment. It is a graph for demonstrating the temperature estimation operation | movement in 3rd Embodiment.

  Next, an embodiment is given and this invention is demonstrated in detail. In the present embodiment, an example in which the power conversion device according to the present invention is applied to a motor control device that is mounted on a vehicle and controls a motor for driving the vehicle is shown.

(First embodiment)
First, the configuration of the motor control device of the first embodiment will be described with reference to FIG. Here, FIG. 1 is a circuit diagram of the motor control device according to the first embodiment.

  A motor control device 1 (power conversion device) shown in FIG. 1 converts a DC high voltage (for example, 288 V) output from a high-voltage battery B1 insulated from a vehicle body into a three-phase AC voltage and supplies it to a vehicle drive motor M1. And a device for controlling the vehicle drive motor M1. The motor control device 1 includes a smoothing capacitor 10, an inverter device 11, and a control device 12.

  The smoothing capacitor 10 is an element for smoothing the DC high voltage of the high voltage battery B1. One end of the smoothing capacitor 10 is connected to the positive terminal of the high voltage battery B1. The other end is connected to the negative terminal of the high voltage battery B1. Furthermore, the negative terminal of the high voltage battery B1 is connected to the ground for the high voltage battery insulated from the vehicle body.

  The inverter device 11 is a device that converts the DC voltage smoothed by the smoothing capacitor 10 into a three-phase AC voltage and supplies it to the vehicle drive motor M1. The inverter device 11 includes IGBTs 110a to 110f (switching elements), current sense resistors 111a to 111f, and temperature sensitive diodes 112a to 112c (temperature detection elements).

  The IGBTs 110a to 110f are switching elements that are driven by controlling the voltage of the gate (control terminal) and convert the DC voltage smoothed by the smoothing capacitor 10 by turning on and off to a three-phase AC voltage. . The IGBTs 110a to 110f include a current sense terminal through which a current that is proportional to the collector current and smaller than the collector current flows. The IGBTs 110a and 110d, the IGBTs 110b and 110e, and the IGBTs 110c and 110f are respectively connected in series. Specifically, the emitters of the IGBTs 110a to 110c are connected to the collectors of the IGBTs 110d to 110f, respectively. Three sets of IGBTs 110a and 110d, IGBTs 110b and 110e, and IGBTs 110c and 110f connected in series are connected in parallel. The collectors of the IGBTs 110 a to 110 c are connected to one end of the smoothing capacitor 10, and the emitters of the IGBTs 110 d to 110 f are connected to the other end of the smoothing capacitor 10. The gates and emitters of the IGBTs 110a to 110f are connected to the control device 12, respectively. Further, the series connection points of the IGBTs 110a and 110d, the IGBTs 110b and 110e, and the IGBTs 110c and 110f that are connected in series are respectively connected to the vehicle drive motor M1.

  The current sense resistors 111a to 111f are elements for converting the current flowing through the IGBTs 110a to 110f into a voltage. Specifically, it is an element that converts a current flowing through a current sense terminal into a voltage. One ends of the current sense resistors 111a to 111f are connected to the current sense terminals of the IGBTs 110a to 110f, and the other ends are connected to the emitters of the IGBTs 110a to 110f, respectively. Further, both ends of the current sense resistors 111a to 111f are connected to the control device 12, respectively.

  The temperature sensitive diodes 112 a to 112 c are elements for detecting the temperature of one IGBT 110 e among the plurality of IGBTs 110 a to 110 f configuring the inverter device 11. Specifically, it is an element that outputs a voltage according to temperature by passing a constant current. The temperature sensitive diodes 112a to 112c are integrally configured with the IGBT 110e and connected in series. Among the temperature-sensitive diodes 112a to 112c connected in series, the anode of the temperature-sensitive diode 112a on one end side is connected to the control device 12, and the cathode of the temperature-sensitive diode 112c on the multi-end side is connected to the emitter of the IGBT 110e.

  The control device 12 is a device that controls the IGBTs 110a to 110f. The control device 12 is connected to the gates and emitters of the IGBTs 110a to 110f, respectively. Moreover, in order to detect the electric current which flows into IGBT110a-110f, it connects to the both ends of current sense resistance 111a-111f, respectively. Further, in order to detect the temperature of the IGBT 110e, it is connected to the anode of the temperature sensitive diode 112a.

  Next, the control device will be described in detail with reference to FIGS. Here, FIG. 2 is a circuit diagram of the control device in FIG. Specifically, it is a circuit diagram showing a circuit portion for one IGBT. FIG. 3 is a graph for explaining the temperature estimation operation in the first embodiment.

  As shown in FIG. 2, the control device 12 includes a conversion circuit 120, a photocoupler 121, and a drive circuit 122 for the IGBT 110e. Further, each of the IGBTs 110a to 110d and 110f includes a conversion circuit, a photocoupler, and a drive circuit. Furthermore, a memory 123 (temperature estimation circuit, storage unit) and a microcomputer 124 (temperature estimation circuit) are provided for the IGBTs 110a to 110f.

  The conversion circuit 120 is a circuit that converts the voltage of the current sense resistor 111e into a pulse signal having a period corresponding to the voltage and outputs the pulse signal. Further, it is also a circuit that converts the voltage of the temperature sensitive diodes 112a to 112c into a pulse signal having a period corresponding to the voltage and outputs the pulse signal. Note that the conversion circuit for the IGBTs 110a to 110d and 110f is a circuit that converts only the voltage of the current sense resistors 111a to 111d and 111f into a pulse signal having a period corresponding to the voltage and outputs the pulse signal. The input terminal of the conversion circuit 120 is connected to one end of the current sense resistor 111e and the anode of the temperature sensitive diode 112a. The output terminal is connected to the photocoupler 121.

  The photocoupler 121 is an element that electrically insulates the pulse signal output from the conversion circuit 120 and transmits the pulse signal to the microcomputer 124. The input terminal of the photocoupler 121 is connected to the output terminal of the conversion circuit 120. The output terminal is connected to the microcomputer 124.

  The drive circuit 122 is a circuit that is controlled by the microcomputer 124 and drives the IGBT 110e. The drive circuit 122 is connected to the microcomputer 124. Further, it is connected to the gate of the IGBT 110e.

  The memory 123 is an element that stores information for estimating the temperatures of the IGBTs 110a to 110d and 110f. The memory 123 stores each on-resistance measured in advance as the characteristic information of the IGBTs 110a to 110f. Further, as shown in FIG. 3, data is stored that indicates the relationship between the difference in on-resistance of the IGBT measured in advance and the accompanying temperature difference. Specifically, data indicating the relationship between the on-resistance of the IGBT and the temperature when the current flowing through the IGBT is I1, I2 (> I1), or I3 (> I2) is stored. The memory 123 is connected to the microcomputer 124.

  The microcomputer 124 is an element that drives the IGBTs 110a to 110f by controlling a drive circuit based on a drive signal input from the outside and a current flowing through the IGBTs 110a to 110f. Further, the temperature of the IGBTs 110a to 110d and 110f is estimated based on the current flowing through the IGBT 110e, the characteristic information of the IGBTs 110a to 110f, and the data indicating the relationship between the difference in the on-resistance of the IGBT and the temperature difference associated therewith. It is also an element to protect. The microcomputer 124 is connected to the output terminal of the photocoupler 121. Further, it is connected to the memory 123. Further, it is connected to the drive circuit 122.

  Next, the operation of the motor control device will be described with reference to FIG. When the ignition switch (not shown) of the vehicle is turned on, the motor control device 1 shown in FIG. 1 starts its operation. The DC high voltage of the high voltage battery B1 is smoothed by the smoothing capacitor 10. The control device 12 controls the IGBTs 110a to 110f configuring the inverter device 11 based on the drive signal input from the outside and the detection results of the current sense resistors 111a to 111f. Specifically, the IGBTs 110a to 110f are turned on and off at a predetermined cycle. The inverter device 11 converts the DC high voltage smoothed by the smoothing capacitor 10 into a three-phase AC voltage and supplies it to the vehicle drive motor M1. In this way, the motor control device 1 controls the vehicle drive motor M1.

  Moreover, the control apparatus 12 is based on the temperature of IGBT110e detected by the temperature sensing diodes 112a-112c, and the characteristic information of IGBT110a-110f memorize | stored inside, The temperature of IGBT110a-110d, 110f which has not detected temperature Is estimated. Then, based on the detected temperature of the IGBT 110e and the estimated IGBTs 110a to 110d and 110f, the presence / absence of an IGBT temperature abnormality is determined. If there is an abnormality, the operation of the inverter device 11 is stopped.

  Next, the temperature estimation operation of the IGBT will be described with reference to FIGS. Specifically, a case where the temperature of the IGBT 110f is estimated will be described as an example.

  In FIG. 2, the current flowing through the IGBT 110 e detected by the current sense resistor 111 e and the temperature of the IGBT 110 e detected by the temperature sensitive diodes 112 a to 112 c are converted into pulse signals by the conversion circuit 120, via the photocoupler 123. Are input to the microcomputer 124. The microcomputer 124 calculates a difference ΔR between the on-resistances of the IGBT 110e and the IGBT 110f from the on-resistances R0 and R1 of the IGBTs 110e and 110f stored in the memory 123. Then, based on the detected current flowing through the IGBT 110e, the temperature estimation is performed from the data indicating the relationship between the difference in the on-resistance of the IGBT stored in the memory 123 and the accompanying temperature difference shown in FIG. Identify the data to use. For example, when the current flowing through the IGBT 110e is I2, the data corresponding to the current I2 is identified from the data indicating the relationship between the IGBT on-resistance difference stored in the memory 123 and the accompanying temperature difference. . Furthermore, from the data indicating the relationship between the difference in on-resistance of the IGBT corresponding to the specified current I2 and the temperature difference associated therewith, and the obtained difference in on-resistance ΔR, the difference in on-resistance ΔR is obtained with reference to the on-resistance R0 of the IGBT 110e. The accompanying temperature difference ΔT is obtained. And the temperature difference (DELTA) T calculated | required is added to the detected temperature of IGBT110e, and the temperature of IGBT110f which has not detected temperature is estimated. Similarly, the temperatures of the IGBTs 110a to 110d whose temperatures are not detected are also estimated.

  Next, the effect will be described. According to 1st Embodiment, based on the characteristic information of IGBT110a-110f, the temperature of IGBT110a-110d, 110f which has not detected temperature is estimated. Therefore, the temperature can be accurately estimated without being affected by variations in IGBT characteristics.

  According to the first embodiment, the temperature of the IGBT in a steady state after the IGBT is turned on varies depending on the on-resistance of the IGBT. If the on-resistance of the IGBT is small, the loss in the steady state is small, and accordingly, the temperature rise of the IGBT is also small. On the other hand, if the on-resistance of the IGBT is large, the loss in the steady state increases, and accordingly, the temperature rise of the IGBT also increases. Therefore, by estimating the temperature based on the difference in on-resistance between the IGBT 110e that detects the temperature and the IGBTs 110a to 110d and 110f that do not detect the temperature, the temperature is not affected by variations in the characteristics of the IGBT. It can be estimated with high accuracy.

  According to the first embodiment, the microcomputer 124 obtains the temperature difference ΔT associated therewith from the on-resistance difference ΔR, and estimates the temperature based on the detection results of the temperature sensitive diodes 112a to 112c and the obtained temperature difference ΔT. Therefore, it is possible to reliably estimate the temperatures of the IGBTs 110a to 110d and 110f that have not detected the temperature.

  According to the first embodiment, as shown in FIG. 3, the microcomputer 124 uses the data indicating the relationship between the on-resistance difference stored in the memory 123 and the temperature difference associated therewith to determine the on-resistance difference ΔR. From the temperature difference ΔT associated therewith. Therefore, the temperature difference ΔT associated with the on-resistance difference ΔR can be reliably obtained.

  In the first embodiment, an example is given in which data indicating the relationship between the difference in on-resistance of the IGBT stored in the memory 123 and the accompanying temperature difference is provided for each current flowing through the IGBT. It is not limited to this. Even if the current flowing through the IGBT is different, if there is no difference in the data indicating the relationship between the IGBT on-resistance difference and the accompanying temperature difference, the relationship between the IGBT on-resistance difference and the accompanying temperature difference 1 is shown. The temperature may be estimated based on the set of data.

(Second Embodiment)
Next, the motor control device of the second embodiment will be described. The motor control device according to the second embodiment uses the input capacitance of the gate as the IGBT characteristic information, while the motor control device according to the first embodiment estimates the temperature using the on-resistance as the IGBT characteristic information. Is to be estimated. The motor control device of the second embodiment has the same configuration as the motor control device of the first embodiment except for the IGBT characteristic information stored in the memory and the temperature estimation operation.

  First, the temperature estimation operation of the control circuit will be described with reference to FIGS. Here, FIG. 4 is a graph for explaining the temperature estimation operation in the second embodiment.

  The memory 123 shown in FIG. 2 stores the input capacitance of each gate measured in advance as the characteristic information of the IGBTs 110a to 110f. Specifically, a combined capacity of a gate-collector capacity and a gate-emitter capacity is stored. Further, as shown in FIG. 4, data indicating the relationship between the input capacitance difference of the IGBT gate measured in advance and the temperature difference associated therewith is stored. Specifically, data indicating the relationship between the input capacitance of the IGBT gate and the temperature when the current flowing through the IGBT is I1, I2 (> I1), or I3 (> I2) is stored.

  In FIG. 2, the microcomputer 124 obtains the gate input capacitance difference ΔCin between the IGBT 110 e and the IGBT 110 f from the gate input capacitances Cin 0 and Cin 1 of the IGBTs 110 e and 110 f stored in the memory 123. Based on the detected current flowing in the IGBT 110e, the temperature shown in FIG. 4 is obtained from the data indicating the relationship between the input capacitance difference of the IGBT gate stored in the memory 123 and the accompanying temperature difference. Identify the data used for estimation. For example, when the current flowing through the IGBT 110e is I2, the data corresponding to the current I2 is specified from the data indicating the relationship between the input capacitance difference of the IGBT gate stored in the memory 123 and the accompanying temperature difference. To do. Further, based on the data indicating the relationship between the input capacitance difference of the IGBT corresponding to the specified current I2 and the temperature difference associated therewith, and the obtained gate input capacitance difference ΔCin, the gate input capacitance Cin0 of the IGBT 110e is used as a reference. A temperature difference ΔT associated with the gate input capacitance difference ΔCin is obtained. And the temperature difference (DELTA) T calculated | required is added to the detected temperature of IGBT110e, and the temperature of IGBT110f which has not detected temperature is estimated. Similarly, the temperatures of the IGBTs 110a to 110d whose temperatures are not detected are also estimated.

  Next, the effect will be described. According to the second embodiment, the temperature of the IGBT in a transient state when the IGBT is turned on from off varies depending on the switching speed of the IGBT. When the switching speed is high, the loss in the transient state is reduced, and accordingly, the temperature rise of the IGBT is also reduced. On the other hand, if the switching speed is slow, the loss in the transient state increases, and the temperature rise of the IGBT also increases accordingly. By the way, if the input capacity of the gate of the IGBT is small, the charging time is shortened and the switching speed is increased. On the other hand, if the input capacity of the gate of the IGBT is large, the charging time becomes long and the switching speed becomes slow. Therefore, by estimating the temperature based on the difference in input capacitance between the IGBT that detects the temperature and the IGBT gate that does not detect the temperature, the temperature is accurately estimated without being affected by variations in the characteristics of the IGBT. can do.

According to the second embodiment, the microcomputer 124 obtains the temperature difference ΔT associated therewith from the gate input capacitance difference ΔCin, and calculates the temperature based on the detection results of the temperature sensitive diodes 112a to 112c and the obtained temperature difference ΔT. presume. Therefore, it is possible to reliably estimate the temperatures of the IGBTs 110a to 110d and 110f that have not detected the temperature.
According to the second embodiment, the microcomputer 124 accompanies the gate input capacitance difference ΔCin according to the data indicating the relationship between the gate input capacitance difference stored in the memory 123 and the accompanying temperature difference. A temperature difference ΔT is obtained. Therefore, the temperature difference ΔT associated with the gate input capacitance difference ΔCin can be reliably obtained.

  In the second embodiment, an example is given in which data indicating the relationship between the input capacitance difference of the IGBT gate stored in the memory 123 and the accompanying temperature difference is provided for each current flowing through the IGBT. However, it is not limited to this. Even if the current flowing through the IGBT is different, if there is no difference in the data indicating the relationship between the input capacitance of the IGBT gate and the accompanying temperature difference, the difference in the input capacitance of the IGBT and the accompanying temperature difference The temperature may be estimated based on a set of data indicating the relationship.

(Third embodiment)
Next, the motor control apparatus of 3rd Embodiment is demonstrated. The motor control device of the third embodiment uses the on-resistance as the IGBT characteristic information to estimate the temperature, while the motor control device of the first embodiment uses the storable charge amount between the IGBT terminals. Is to be estimated. The motor control device of the second embodiment has the same configuration as the motor control device of the first embodiment except for the IGBT characteristic information stored in the memory and the temperature estimation operation.

  First, the temperature estimation operation of the control circuit will be described with reference to FIGS. Here, FIG. 5 is a graph for explaining the temperature estimation operation in the third embodiment.

  The memory 123 shown in FIG. 2 stores the charge amount that can be accumulated between the terminals measured in advance as the characteristic information of the IGBTs 110a to 110f. Specifically, the amount of charge that can be accumulated between the gate, collector, and emitter terminals is stored. Further, as shown in FIG. 5, data indicating the relationship between the difference in the amount of charge that can be accumulated between the terminals of the IGBT measured in advance and the temperature difference associated therewith is stored. Specifically, data indicating the relationship between the amount of charge that can be accumulated between the terminals of the IGBT and the temperature when the current flowing through the IGBT is I1, I2 (> I1), or I3 (> I2) is stored.

  In FIG. 2, the microcomputer 124 obtains the difference ΔQg of the storable charge amount between the terminals of the IGBT 110 e and the IGBT 110 f from the storable charge amounts Qg 0 and Qg 1 between the terminals of the IGBTs 110 e and 110 f stored in the memory 123. . Based on the detected current flowing through the IGBT 110e, the data shown in FIG. 5 shows the relationship between the difference in the amount of charge that can be accumulated between the terminals of the IGBT stored in the memory 123 and the temperature difference associated therewith. From this, the data used for temperature estimation is specified. For example, when the current flowing through the IGBT 110e is I2, it corresponds to the current I2 among the data indicating the relationship between the difference in the amount of charge that can be stored between the terminals of the IGBT stored in the memory 123 and the temperature difference associated therewith. Identify the data. Furthermore, from the data indicating the relationship between the difference in the amount of charge that can be accumulated between the terminals of the IGBT corresponding to the specified current I2 and the temperature difference associated therewith, and the difference ΔQg in the amount of charge that can be accumulated between the obtained terminals, between the terminals of the IGBT 110e. The temperature difference ΔT associated with the difference ΔQg of the chargeable charge amount between the terminals is obtained with reference to the chargeable charge amount Qg0. And the temperature difference (DELTA) T calculated | required is added to the detected temperature of IGBT110e, and the temperature of IGBT110f which has not detected temperature is estimated. Similarly, the temperatures of the IGBTs 110a to 110d whose temperatures are not detected are also estimated.

  Next, the effect will be described. According to the third embodiment, the temperature of the IGBT in a transient state when the IGBT is turned on from off varies depending on the switching speed of the IGBT. When the switching speed is high, the loss in the transient state is reduced, and accordingly, the temperature rise of the IGBT is also reduced. On the other hand, if the switching speed is slow, the loss in the transient state increases, and the temperature rise of the IGBT also increases accordingly. By the way, if the amount of charge that can be stored between the terminals of the IGBT is small, the charge storage time is shortened and the switching speed is increased. On the other hand, if the amount of charge that can be stored between the terminals of the IGBT is large, the charge storage time becomes long and the switching speed becomes slow. Therefore, by estimating the temperature based on the difference in the amount of charge that can be accumulated between the IGBT that detects the temperature and the IGBT that does not detect the temperature, the temperature is not affected by variations in the characteristics of the IGBT. Can be estimated with high accuracy.

  According to the third embodiment, the microcomputer 124 obtains the temperature difference ΔT associated therewith from the difference ΔQg in the amount of charge that can be accumulated between the terminals, and based on the detection results of the temperature sensitive diodes 112a to 112c and the obtained temperature difference ΔT. To estimate the temperature. Therefore, it is possible to reliably estimate the temperatures of the IGBTs 110a to 110d and 110f that have not detected the temperature.

  According to the third embodiment, the microcomputer 124 determines the amount of charge that can be accumulated between terminals based on the data indicating the relationship between the difference in charge amount that can be accumulated between terminals stored in the memory 123 and the temperature difference associated therewith. The temperature difference ΔT associated therewith is obtained from the difference ΔQg. Therefore, the temperature difference ΔT associated with ΔQg of the storable charge amount between the terminals can be reliably obtained.

  In the third embodiment, an example is provided in which data indicating the relationship between the difference in the amount of charge that can be accumulated between the terminals of the IGBT stored in the memory 123 and the temperature difference associated therewith is provided for each current flowing through the IGBT. It is mentioned, but not limited to this. Even if the current flowing through the IGBT is different, if there is no difference in the data indicating the relationship between the difference in the amount of charge that can be accumulated between the terminals of the IGBT and the accompanying temperature difference, the difference in the amount of charge that can be accumulated between the terminals in the IGBT The temperature may be estimated based on a set of data indicating the relationship between the temperature difference and the temperature difference associated therewith.

(Fourth embodiment)
Next, a motor control device according to a fourth embodiment will be described. The motor control device of the fourth embodiment detects the temperature as the IGBT characteristic information, whereas the motor control device of the first embodiment estimates the temperature using the on-resistance as the IGBT characteristic information. The temperature is estimated using the difference in loss between the IGBT and the IGBT whose temperature is not detected. The motor control device of the fourth embodiment has the same configuration as the motor control device of the first embodiment except for the IGBT characteristic information stored in the memory and the temperature estimation operation.

  First, the temperature estimation operation of the control circuit will be described with reference to FIG. The memory 123 shown in FIG. 2 stores, as characteristic information of the IGBTs 110a to 110f, the difference in loss between the IGBT 110e that detects the temperature and the IGBTs 110a to 110d and 110f that do not detect the temperature, which are measured in advance. Has been. The microcomputer 124 adds the temperature difference obtained from the difference in loss between the IGBT 110e and the IGBT 110f stored in the memory 123 to the detected temperature of the IGBT 110e, and estimates the temperature of the IGBT 110f that has not detected the temperature. Similarly, the temperatures of the IGBTs 110a to 110d whose temperatures are not detected are also estimated.

  Next, the effect will be described. According to the fourth embodiment, the temperature can be accurately estimated without being affected by variations in the characteristics of the IGBT.

DESCRIPTION OF SYMBOLS 1 ... Motor control apparatus (power converter), 10 ... Smoothing capacitor, 11 ... Inverter apparatus, 110a-110d ... IGBT (switching element), 111a-111f ... Current sense resistance, 112a ˜112c ・ ・ ・ Temperature sensing diode (temperature detection element), 12 ・ ・ ・ Control device, 120 ・ ・ ・ Conversion circuit, 121 ・ ・ ・ Photo coupler, 122 ... Drive circuit, 123 ... Memory (temperature estimation) Circuit, storage unit), 124... Microcomputer (temperature estimation circuit), B1... High voltage battery, M1.

Claims (11)

A plurality of switching elements;
A temperature detection element for detecting the temperature of one switching element;
A temperature estimation circuit that estimates the temperature of the switching element that does not detect the temperature based on the detection result of the temperature detection element;
In a power conversion device comprising:
The temperature estimation circuit includes a storage unit that stores characteristic information of each switching element, and detects the temperature based on a detection result of the temperature detection element and the characteristic information stored in the storage unit. The power converter characterized by estimating the temperature of the switching element which is not. The characteristic information is on-resistance,
The temperature estimation circuit obtains a difference between the on-resistance of the switching element that detects the temperature and the switching element that does not detect the temperature based on the on-resistance stored in the storage unit, and detects the temperature The power conversion device according to claim 1, wherein the temperature is estimated based on a difference between the element detection result and the obtained on-resistance.   3. The temperature estimation circuit according to claim 2, wherein the temperature estimation circuit obtains a temperature difference associated therewith from the obtained difference in on-resistance, and estimates the temperature based on the detection result of the temperature detection element and the obtained temperature difference. Power conversion device. The storage unit stores data indicating a relationship between a difference in on-resistance and a temperature difference associated therewith,
The temperature estimation circuit obtains a temperature difference associated therewith from the obtained difference in on-resistance based on data indicating a relationship between a difference in on-resistance stored in the storage unit and a temperature difference associated therewith. The power conversion device according to claim 3. The characteristic information is an input capacity of a control terminal,
The temperature estimation circuit, based on the input capacity of the control terminal stored in the storage unit, the difference between the input capacity of the control element of the switching element that detects the temperature and the switching element that does not detect the temperature The power conversion device according to claim 1, wherein the temperature is estimated based on a difference between a detection result of the temperature detection element and a calculated input capacitance of the control terminal.   6. The temperature estimating circuit calculates a temperature difference associated therewith from the calculated input capacitance difference of the control terminal, and estimates the temperature based on a detection result of the temperature detecting element and the calculated temperature difference. The power converter device described in 1. The storage unit stores data indicating the relationship between the difference in input capacity of the control terminal and the temperature difference associated therewith,
The temperature estimation circuit calculates a temperature difference associated therewith from the obtained difference in the input capacitance of the control terminal based on data indicating a relationship between the difference in the input capacitance of the control terminal stored in the storage unit and the temperature difference associated therewith. It calculates | requires, The power converter device of Claim 6 characterized by the above-mentioned. The characteristic information is a charge amount that can be accumulated between terminals,
The temperature estimation circuit obtains a difference in the chargeable charge amount between terminals of the switching element that detects the temperature stored in the storage unit and the switching element that does not detect the temperature, and the temperature detection element The power converter according to claim 1, wherein the temperature is estimated based on a difference between the detected result and the obtained charge accumulation amount between the terminals.   The temperature estimation circuit calculates a temperature difference associated therewith from a difference in the amount of charge that can be accumulated between the obtained terminals, and estimates the temperature based on a detection result of the temperature detection element and the calculated temperature difference. Item 9. The power conversion device according to Item 8. The storage unit stores data indicating the relationship between the difference in the amount of charge that can be accumulated between the terminals and the accompanying temperature difference,
The temperature estimation circuit is configured to calculate the difference between the chargeable charge amounts between the terminals obtained based on the data indicating the relationship between the difference in chargeable charge amount between the terminals stored in the storage unit and the temperature difference associated therewith. The power converter according to claim 9, wherein the accompanying temperature difference is obtained. The characteristic information is a difference in loss between a switching element that detects the temperature and a switching element that does not detect the temperature.
The temperature estimation circuit detects a temperature based on a detection result of the temperature detection element, and a difference in loss between the switching element that detects the temperature stored in the storage unit and the switching element that does not detect the temperature. The power conversion device according to claim 1, wherein

Images