JP2012186252A5 - Surface emitting laser, array and image forming apparatus - Google Patents

Surface emitting laser, array and image forming apparatus Download PDF

Info

Publication number
JP2012186252A5
JP2012186252A5 JP2011047232A JP2011047232A JP2012186252A5 JP 2012186252 A5 JP2012186252 A5 JP 2012186252A5 JP 2011047232 A JP2011047232 A JP 2011047232A JP 2011047232 A JP2011047232 A JP 2011047232A JP 2012186252 A5 JP2012186252 A5 JP 2012186252A5
Authority
JP
Japan
Prior art keywords
refractive index
layer
surface emitting
low refractive
emitting laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011047232A
Other languages
Japanese (ja)
Other versions
JP2012186252A (en
JP5836609B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2011047232A priority Critical patent/JP5836609B2/en
Priority claimed from JP2011047232A external-priority patent/JP5836609B2/en
Publication of JP2012186252A publication Critical patent/JP2012186252A/en
Publication of JP2012186252A5 publication Critical patent/JP2012186252A5/en
Application granted granted Critical
Publication of JP5836609B2 publication Critical patent/JP5836609B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Description

本発明は、活性層と、前記活性層に対応して配置されたフォトニック結晶層と有し、波長λで発振する面発光レーザであって、前記活性層と前記フォトニック結晶層の間に、隣接する層より屈折率の低い低屈折率層を有し、記面内方向に導波する前記波長λの光に対して高次の横モードを示す高次導波モードを少なくとも1つ有し、前記高次導波モードの光強度分布のピークのうち少なくとも1つ、前記フォトニック結晶層と前記低屈折率層との間に位置していることを特徴とする。 This onset Ming, an active layer having a photonic crystal layer disposed corresponding to the active layer, a surface-emission laser you oscillation at a wavelength lambda, the photonic crystal and the active layer between the layers, higher order waveguide mode showing a high-order transverse mode with respect to light of the wavelength having the adjacent lower low refractive index layer having a refractive index than layer, guided in front Symbol plane direction λ at least one has, prior to SL at least one of the peaks of the light intensity distribution of the higher order waveguide mode, and features that you have located between the low-refractive index layer and the photonic crystal layer To do.

Claims (7)

活性層と、前記活性層に対応して配置されたフォトニック結晶層と有し、波長λで発振する面発光レーザであって、
前記活性層と前記フォトニック結晶層の間に、隣接する層より屈折率の低い低屈折率層を有し、
記面内方向に導波する前記波長λの光に対して高次の横モードを示す高次導波モードを少なくとも1つ有し
前記高次導波モードの光強度分布のピークのうち少なくとも1つ、前記フォトニック結晶層と前記低屈折率層との間に位置していることを特徴とする面発光レーザ。
An active layer having a photonic crystal layer disposed corresponding to the active layer, a surface-emission laser you oscillation at a wavelength lambda,
Between the active layer and the photonic crystal layer, a low refractive index layer having a lower refractive index than an adjacent layer,
At least one has a higher waveguide mode showing the transverse mode of high order to light of the wavelength λ to be guided before Symbol plane direction,
The higher-order waveguide mode of at least one of the peak of the light intensity distribution, the surface emitting laser characterized that you have positioned between said photonic crystal layer low refractive index layer.
前記低屈折率層を構成する材料の屈折率は前記低屈折率層の平均屈折率が、前記フォトニック結晶層の平均屈折率より小さいことを特徴とする請求項1に記載の面発光レーザ。 The refractive index of the material constituting low refractive index layer or an average refractive index of the low refractive index layer, the surface emitting laser according to claim 1, characterized in that less than the average refractive index of the photonic crystal layer . 前記低屈折率層が、多孔質構造で構成されていることを特徴とする請求項1又は2に記載の面発光レーザ。 The low refractive index layer, the surface emitting laser according to claim 1 or 2, characterized in that it is constituted by a porous structure. 前記フォトニック結晶層が、半導体材料中に空気孔を周期配列して構成されており、
前記低屈折率層を構成する多孔質構造における空気孔の体積充填率が、前記フォトニック結晶層における空気孔の体積充填率より大きいことを特徴とする請求項3に記載の面発光レーザ。
The photonic crystal layer is configured by periodically arranging air holes in a semiconductor material,
The volume filling ratio of the air holes in the porous structure forming the low refractive index layer, the surface emitting laser according to claim 3, wherein the greater than the volume filling ratio of the air holes in the front Symbol photonic crystal layer.
前記隣接する層と前記低屈折率層は、Al、Ga、Asを含む半導体材料又はAl、Ga、Nを含む半導体材料で構成され、The adjacent layer and the low refractive index layer are made of a semiconductor material containing Al, Ga, As or a semiconductor material containing Al, Ga, N,
前記低屈折率層のAlの比率が、前記隣接する層のAlの比率よりも高いことを特徴とする請求項1又は2に記載の面発光レーザ。3. The surface emitting laser according to claim 1, wherein an Al ratio of the low refractive index layer is higher than an Al ratio of the adjacent layer.
請求項1乃至5のいずれか1項に記載の面発光レーザが複数配列されたアレイ。An array in which a plurality of surface emitting lasers according to any one of claims 1 to 5 are arranged. 請求項1乃至5のいずれか1項に記載の面発光レーザと、感光ドラムと、を有する画像形成装置。An image forming apparatus comprising the surface emitting laser according to claim 1 and a photosensitive drum.
JP2011047232A 2011-03-04 2011-03-04 Surface emitting laser, array and image forming apparatus Expired - Fee Related JP5836609B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011047232A JP5836609B2 (en) 2011-03-04 2011-03-04 Surface emitting laser, array and image forming apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011047232A JP5836609B2 (en) 2011-03-04 2011-03-04 Surface emitting laser, array and image forming apparatus

Publications (3)

Publication Number Publication Date
JP2012186252A JP2012186252A (en) 2012-09-27
JP2012186252A5 true JP2012186252A5 (en) 2014-04-17
JP5836609B2 JP5836609B2 (en) 2015-12-24

Family

ID=47016073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011047232A Expired - Fee Related JP5836609B2 (en) 2011-03-04 2011-03-04 Surface emitting laser, array and image forming apparatus

Country Status (1)

Country Link
JP (1) JP5836609B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6954562B2 (en) * 2017-09-15 2021-10-27 セイコーエプソン株式会社 Light emitting device and its manufacturing method, and projector
CN110323671B (en) * 2019-04-19 2021-05-11 中国科学院半导体研究所 Single-mode semiconductor laser epitaxial structure based on photonic crystal control

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3489878B2 (en) * 1993-10-22 2004-01-26 シャープ株式会社 Semiconductor laser device and method for adjusting self-excited oscillation intensity
JP2004302112A (en) * 2003-03-31 2004-10-28 Nikon Corp Optical thin film, optical member, optical system, projection exposure apparatus and manufacturing method for optical thin film
JP4933193B2 (en) * 2005-08-11 2012-05-16 キヤノン株式会社 Surface emitting laser and method for producing two-dimensional photonic crystal in the surface emitting laser
JP2007234824A (en) * 2006-02-28 2007-09-13 Canon Inc Vertical resonator type surface-emitting laser
JP4164536B2 (en) * 2006-11-16 2008-10-15 キヤノン株式会社 Structure using photonic crystal and surface emitting laser
JP5118544B2 (en) * 2007-05-15 2013-01-16 キヤノン株式会社 Surface emitting laser element
JP2009130110A (en) * 2007-11-22 2009-06-11 Sumitomo Electric Ind Ltd Group-iii nitride surface light-emitting element and its manufacturing method
JP5171318B2 (en) * 2008-03-05 2013-03-27 キヤノン株式会社 Surface emitting laser array
JP2010003918A (en) * 2008-06-20 2010-01-07 Canon Inc Surface light-emitting laser and method of manufacturing the same
JP2010161329A (en) * 2008-12-08 2010-07-22 Canon Inc Surface-emitting laser including two-dimensional photonic crystal
JP5327234B2 (en) * 2009-01-28 2013-10-30 コニカミノルタ株式会社 Two-dimensional photonic crystal surface emitting laser and manufacturing method thereof
JP4902682B2 (en) * 2009-03-27 2012-03-21 キヤノン株式会社 Nitride semiconductor laser

Similar Documents

Publication Publication Date Title
US7346251B2 (en) Light emission using quantum dot emitters in a photonic crystal
Mocella et al. Self-collimation of light over millimeter-scale distance in a quasi-zero-average-index metamaterial
US20170207421A1 (en) Organic electroluminescent element, base material, and light emitting device
JP6528039B2 (en) Broadband light emitting device with electrodes of lattice structure
JP2008311625A5 (en)
TW200428730A (en) Two-dimensional photonic crystal cavity and channel add/drop filter
JP2008135786A5 (en)
JP2013179363A5 (en)
JP2013042162A5 (en)
JP2006047663A5 (en)
JP5183555B2 (en) Surface emitting laser array
JP3721142B2 (en) Two-dimensional photonic crystal point defect interference optical resonator and optical reflector
JP2012227425A5 (en) Surface emitting laser and image forming apparatus
JP2014517482A5 (en)
JP2007234724A5 (en)
JP4588113B2 (en) Photonic bandgap fiber
JP2012186252A5 (en) Surface emitting laser, array and image forming apparatus
JP2014006529A5 (en)
WO2012125229A3 (en) High-power quantum cascade lasers with active-photonic-crystal structure for single, in-phase mode operation
CN108988106B (en) Controllable multi-wavelength optical fiber external cavity laser based on super-surface external cavity mirror
JP2006267898A5 (en)
JP2015133381A (en) Method of manufacturing semiconductor device, semiconductor device, and system of manufacturing semiconductor device
JP2009063754A5 (en)
JP2009238828A5 (en)
JP2012222061A5 (en)