JP2012186252A5 - Surface emitting laser, array and image forming apparatus - Google Patents
Surface emitting laser, array and image forming apparatus Download PDFInfo
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- JP2012186252A5 JP2012186252A5 JP2011047232A JP2011047232A JP2012186252A5 JP 2012186252 A5 JP2012186252 A5 JP 2012186252A5 JP 2011047232 A JP2011047232 A JP 2011047232A JP 2011047232 A JP2011047232 A JP 2011047232A JP 2012186252 A5 JP2012186252 A5 JP 2012186252A5
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本発明は、活性層と、前記活性層に対応して配置されたフォトニック結晶層と、を有し、波長λで発振する面発光レーザであって、前記活性層と前記フォトニック結晶層の間に、隣接する層より屈折率の低い低屈折率層を有し、前記面内方向に導波する前記波長λの光に対して高次の横モードを示す高次導波モードを少なくとも1つ有し、前記高次導波モードの光強度分布のピークのうち少なくとも1つが、前記フォトニック結晶層と前記低屈折率層との間に位置していることを特徴とする。 This onset Ming, an active layer having a photonic crystal layer disposed corresponding to the active layer, a surface-emission laser you oscillation at a wavelength lambda, the photonic crystal and the active layer between the layers, higher order waveguide mode showing a high-order transverse mode with respect to light of the wavelength having the adjacent lower low refractive index layer having a refractive index than layer, guided in front Symbol plane direction λ at least one has, prior to SL at least one of the peaks of the light intensity distribution of the higher order waveguide mode, and features that you have located between the low-refractive index layer and the photonic crystal layer To do.
Claims (7)
前記活性層と前記フォトニック結晶層の間に、隣接する層より屈折率の低い低屈折率層を有し、
前記面内方向に導波する前記波長λの光に対して高次の横モードを示す高次導波モードを少なくとも1つ有し、
前記高次導波モードの光強度分布のピークのうち少なくとも1つが、前記フォトニック結晶層と前記低屈折率層との間に位置していることを特徴とする面発光レーザ。 An active layer having a photonic crystal layer disposed corresponding to the active layer, a surface-emission laser you oscillation at a wavelength lambda,
Between the active layer and the photonic crystal layer, a low refractive index layer having a lower refractive index than an adjacent layer,
At least one has a higher waveguide mode showing the transverse mode of high order to light of the wavelength λ to be guided before Symbol plane direction,
The higher-order waveguide mode of at least one of the peak of the light intensity distribution, the surface emitting laser characterized that you have positioned between said photonic crystal layer low refractive index layer.
前記低屈折率層を構成する多孔質構造における空気孔の体積充填率が、前記フォトニック結晶層における空気孔の体積充填率より大きいことを特徴とする請求項3に記載の面発光レーザ。 The photonic crystal layer is configured by periodically arranging air holes in a semiconductor material,
The volume filling ratio of the air holes in the porous structure forming the low refractive index layer, the surface emitting laser according to claim 3, wherein the greater than the volume filling ratio of the air holes in the front Symbol photonic crystal layer.
前記低屈折率層のAlの比率が、前記隣接する層のAlの比率よりも高いことを特徴とする請求項1又は2に記載の面発光レーザ。3. The surface emitting laser according to claim 1, wherein an Al ratio of the low refractive index layer is higher than an Al ratio of the adjacent layer.
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JP2011047232A JP5836609B2 (en) | 2011-03-04 | 2011-03-04 | Surface emitting laser, array and image forming apparatus |
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JP2011047232A JP5836609B2 (en) | 2011-03-04 | 2011-03-04 | Surface emitting laser, array and image forming apparatus |
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JP2012186252A JP2012186252A (en) | 2012-09-27 |
JP2012186252A5 true JP2012186252A5 (en) | 2014-04-17 |
JP5836609B2 JP5836609B2 (en) | 2015-12-24 |
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JP2011047232A Expired - Fee Related JP5836609B2 (en) | 2011-03-04 | 2011-03-04 | Surface emitting laser, array and image forming apparatus |
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Families Citing this family (2)
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JP6954562B2 (en) * | 2017-09-15 | 2021-10-27 | セイコーエプソン株式会社 | Light emitting device and its manufacturing method, and projector |
CN110323671B (en) * | 2019-04-19 | 2021-05-11 | 中国科学院半导体研究所 | Single-mode semiconductor laser epitaxial structure based on photonic crystal control |
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JP3489878B2 (en) * | 1993-10-22 | 2004-01-26 | シャープ株式会社 | Semiconductor laser device and method for adjusting self-excited oscillation intensity |
JP2004302112A (en) * | 2003-03-31 | 2004-10-28 | Nikon Corp | Optical thin film, optical member, optical system, projection exposure apparatus and manufacturing method for optical thin film |
JP4933193B2 (en) * | 2005-08-11 | 2012-05-16 | キヤノン株式会社 | Surface emitting laser and method for producing two-dimensional photonic crystal in the surface emitting laser |
JP2007234824A (en) * | 2006-02-28 | 2007-09-13 | Canon Inc | Vertical resonator type surface-emitting laser |
JP4164536B2 (en) * | 2006-11-16 | 2008-10-15 | キヤノン株式会社 | Structure using photonic crystal and surface emitting laser |
JP5118544B2 (en) * | 2007-05-15 | 2013-01-16 | キヤノン株式会社 | Surface emitting laser element |
JP2009130110A (en) * | 2007-11-22 | 2009-06-11 | Sumitomo Electric Ind Ltd | Group-iii nitride surface light-emitting element and its manufacturing method |
JP5171318B2 (en) * | 2008-03-05 | 2013-03-27 | キヤノン株式会社 | Surface emitting laser array |
JP2010003918A (en) * | 2008-06-20 | 2010-01-07 | Canon Inc | Surface light-emitting laser and method of manufacturing the same |
JP2010161329A (en) * | 2008-12-08 | 2010-07-22 | Canon Inc | Surface-emitting laser including two-dimensional photonic crystal |
JP5327234B2 (en) * | 2009-01-28 | 2013-10-30 | コニカミノルタ株式会社 | Two-dimensional photonic crystal surface emitting laser and manufacturing method thereof |
JP4902682B2 (en) * | 2009-03-27 | 2012-03-21 | キヤノン株式会社 | Nitride semiconductor laser |
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