JP2012146997A5 - Light emitting device and electronic device - Google Patents
Light emitting device and electronic device Download PDFInfo
- Publication number
- JP2012146997A5 JP2012146997A5 JP2012052617A JP2012052617A JP2012146997A5 JP 2012146997 A5 JP2012146997 A5 JP 2012146997A5 JP 2012052617 A JP2012052617 A JP 2012052617A JP 2012052617 A JP2012052617 A JP 2012052617A JP 2012146997 A5 JP2012146997 A5 JP 2012146997A5
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- JP
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- Prior art keywords
- light emitting
- transistor
- emitting device
- transistors
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (5)
複数のトランジスタと複数の発光素子とを有する画素部と、を有し、A pixel portion having a plurality of transistors and a plurality of light emitting elements;
前記基材は、第１の方向に曲面を有し、The substrate has a curved surface in a first direction,
前記複数の発光素子の各々は、Each of the plurality of light emitting elements is
第１の電極と、A first electrode,
前記第１の電極上の有機化合物層と、An organic compound layer on the first electrode;
前記有機化合物層上の第２の電極と、を有し、And a second electrode on the organic compound layer,
前記第１の電極は、前記複数のトランジスタのいずれか一と電気的に接続されておりThe first electrode is electrically connected to any one of the plurality of transistors. 、,
前記複数のトランジスタは、前記複数のトランジスタのチャネル長方向が全て第２の方向に沿うように配置されており、The plurality of transistors are arranged such that the channel length directions of the plurality of transistors are all along the second direction.
前記第１の方向は、前記第２の方向と直交するような方向であることを特徴とする発光装置。The light emitting device according to claim 1, wherein the first direction is a direction perpendicular to the second direction.
前記複数のトランジスタの各々は、結晶性を有する半導体層を有することを特徴とする発光装置。Each of the plurality of transistors includes a semiconductor layer having crystallinity.
第１のトランジスタと、前記第１のトランジスタと電気的に接続された発光素子と、を有する画素部と、A pixel portion including a first transistor and a light emitting element electrically connected to the first transistor;
第２のトランジスタを有する駆動回路と、を有し、Driving circuitry having a second transistor;
前記基材は、第１の方向に曲面を有し、The substrate has a curved surface in a first direction,
前記第１のトランジスタ及び前記第２のトランジスタは、前記第１のトランジスタのチャネル長方向及び前記第２のトランジスタのチャネル長方向が、第２の方向に沿うように配置されており、The first transistor and the second transistor are arranged such that the channel length direction of the first transistor and the channel length direction of the second transistor are along a second direction.
前記第１の方向は、前記第２の方向と直交するような方向であることを特徴とする発光装置。The light emitting device according to claim 1, wherein the first direction is a direction perpendicular to the second direction.
前記基材は、プラスチック、ガラス、金属、又はセラミックスを有することを特徴とする発光装置。The light emitting device, wherein the base material comprises plastic, glass, metal or ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012052617A JP5470414B2 (en) | 2012-03-09 | 2012-03-09 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012052617A JP5470414B2 (en) | 2012-03-09 | 2012-03-09 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012025651A Division JP5380561B2 (en) | 2012-02-09 | 2012-02-09 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013224100A Division JP5613814B2 (en) | 2013-10-29 | 2013-10-29 | Portable device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012146997A JP2012146997A (en) | 2012-08-02 |
| JP2012146997A5 true JP2012146997A5 (en) | 2013-12-12 |
| JP5470414B2 JP5470414B2 (en) | 2014-04-16 |
Family
ID=46790194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012052617A Expired - Fee Related JP5470414B2 (en) | 2012-03-09 | 2012-03-09 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5470414B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101950473B1 (en) * | 2012-10-05 | 2019-02-21 | 삼성디스플레이 주식회사 | Flexible display panel |
| DE102017212799A1 (en) | 2017-07-26 | 2019-01-31 | Siltronic Ag | Epitaxially coated semiconductor wafer of monocrystalline silicon and process for its preparation |
-
2012
- 2012-03-09 JP JP2012052617A patent/JP5470414B2/en not_active Expired - Fee Related
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