JP2012137319A - Gas detection element - Google Patents
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- JP2012137319A JP2012137319A JP2010288143A JP2010288143A JP2012137319A JP 2012137319 A JP2012137319 A JP 2012137319A JP 2010288143 A JP2010288143 A JP 2010288143A JP 2010288143 A JP2010288143 A JP 2010288143A JP 2012137319 A JP2012137319 A JP 2012137319A
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- 238000001514 detection method Methods 0.000 title claims abstract description 73
- 239000011247 coating layer Substances 0.000 claims abstract description 63
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000002093 peripheral effect Effects 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 7
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 27
- 229920001296 polysiloxane Polymers 0.000 abstract description 8
- 231100000572 poisoning Toxicity 0.000 abstract description 7
- 230000000607 poisoning effect Effects 0.000 abstract description 7
- 238000011084 recovery Methods 0.000 abstract description 4
- 238000004299 exfoliation Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 152
- 230000000052 comparative effect Effects 0.000 description 32
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 15
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 14
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 230000006641 stabilisation Effects 0.000 description 12
- 238000011105 stabilization Methods 0.000 description 12
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 210000003746 feather Anatomy 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003915 liquefied petroleum gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 238000012951 Remeasurement Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
本発明は、検出電極と、金属酸化物半導体を含むガス感応部と、当該ガス感応部を加熱する加熱部とを備えるガス検知素子に関する。 The present invention relates to a gas detection element including a detection electrode, a gas sensitive part including a metal oxide semiconductor, and a heating part for heating the gas sensitive part.
半導体式ガスセンサは、上記ガス検知素子のガス感応部に被検知ガスが接触したときに発生する抵抗値変化を検出する。
しかし、半導体式ガスセンサは、雰囲気中の有機シリコーンガス（例えば、ヘキサメチルジシロキサン等）によってガス検知素子が被毒すると、被検知ガスに対する検出感度が低下してしまうという問題を抱えている。
The semiconductor gas sensor detects a change in resistance value that occurs when the gas to be detected comes into contact with the gas sensitive portion of the gas detection element.
However, the semiconductor type gas sensor has a problem that when the gas detection element is poisoned by an organic silicone gas (for example, hexamethyldisiloxane) in the atmosphere, the detection sensitivity to the detection gas is lowered.
このような問題を解決するために開発されている従来のガス検知素子として、ガス感応部の外周面に結晶構造を有するα又はγ−酸化アルミニウムを含む被覆層を設け、有機シリコーンガスを前記被覆層に選択的に吸着させることによって、ガスセンサの検出感度の低下を抑えようとするものが知られている。
尚、この様な従来技術に関しては、当業者の間で広く知られているものであるため、先行技術文献を示さない。
As a conventional gas detection element that has been developed to solve such problems, a coating layer containing α or γ-aluminum oxide having a crystal structure is provided on the outer peripheral surface of the gas sensitive portion, and the organic silicone gas is coated with the coating layer. It is known to selectively reduce the detection sensitivity of a gas sensor by selectively adsorbing the layer.
Note that such prior art is widely known among those skilled in the art, and therefore, prior art documents are not shown.
しかし、従来のガス検知素子では、有機シリコーンガスを確実に吸着する高い耐被毒性能を備えるようにするためには、その被覆層を数十〜数百μｍ程度という相当厚いものに設定する必要がある。 However, in the conventional gas detection element, in order to provide high poisoning resistance that reliably adsorbs the organosilicon gas, it is necessary to set the coating layer to a considerable thickness of about several tens to several hundreds μm. There is.
被覆層が厚いと、無通電時に被検知ガスが留まり易くなり検出感度を回復させるための時間が長くなるため、ガスセンサの使用勝手が悪くなるという問題があった。また、被覆層の厚みが大きいほどひび割れが生じ易く、さらにガス感応部から剥離し易いという問題も生じていた。 If the coating layer is thick, the gas to be detected is liable to stay at the time of no energization, and it takes a long time to recover the detection sensitivity. In addition, the larger the thickness of the coating layer, the more likely it is to crack, and further the problem is that it easily peels from the gas sensitive part.
本発明の目的は、有機シリコーンガスに対する耐被毒性能が高く、ガスセンサの検出感度の回復時間をより短縮化させ、さらに被覆層におけるひび割れや剥離が生じ難いガス検知素子を提供することにある。 An object of the present invention is to provide a gas detection element that has a high resistance to poisoning with respect to an organic silicone gas, shortens the recovery time of the detection sensitivity of the gas sensor, and is less likely to crack or peel off in the coating layer.
本発明のガス検知素子に係る第１特徴構成は、検出電極と、金属酸化物半導体を含むガス感応部と、当該ガス感応部を加熱する加熱部とを備えるガス検知素子であって、前記ガス感応部の外周面に、無定形の酸化アルミニウムを含む被覆層を設けてある点にある。 A first characteristic configuration relating to the gas detection element of the present invention is a gas detection element comprising a detection electrode, a gas sensitive part including a metal oxide semiconductor, and a heating part for heating the gas sensitive part, wherein the gas The coating layer containing amorphous aluminum oxide is provided on the outer peripheral surface of the sensitive part.
〔作用及び効果〕
本構成のごとく、結晶構造を有しない無定形の酸化アルミニウムを適用することによって、被覆層の厚みを数十〜数百ｎｍ程度まで薄くしても、有機シリコーンガスを選択的に確実に吸着することができる。
被覆層が従来と比べて非常に薄いため、無通電時に被検知ガスが留まり難くなり、検出感度を回復させるための時間が短くて済む。さらにひび割れが生じ難く、ガス感応部からも剥離し難い。
[Action and effect]
As in this configuration, by applying amorphous aluminum oxide having no crystal structure, even if the thickness of the coating layer is reduced to about several tens to several hundreds of nanometers, the organosilicon gas is selectively and reliably adsorbed. be able to.
Since the coating layer is very thin as compared with the conventional one, it becomes difficult for the gas to be detected to stay at the time of non-energization, and the time for recovering the detection sensitivity can be shortened. Furthermore, it is difficult for cracks to occur, and it is difficult for the gas sensitive part to peel off.
第２特徴構成は、前記被覆層が、無定形の酸化アルミニウムを含むアルミナゾルで前記ガス感応部の外周面を被覆した後、焼成することによって形成される点にある。 The second characteristic configuration is that the coating layer is formed by coating the outer peripheral surface of the gas-sensitive portion with an alumina sol containing amorphous aluminum oxide and then firing.
〔作用及び効果〕
本構成によれば、図６、図７、図１１、図１２に示すように、被覆層の表面形状が羽毛状となる。この羽毛状態は、無定形の酸化アルミニウムの粒子が重合してできた糸状体が三次元的に絡み合うことによって構成される。この構成によって、糸状体同士の結びつきと、糸状体とガス感応部との接着状態が強くなるため、被覆層のひび割れや剥離をより一層効果的に抑えることができる。
[Action and effect]
According to this configuration, as shown in FIGS. 6, 7, 11, and 12, the surface shape of the coating layer is a feather shape. This feather state is formed by three-dimensionally intertwining filaments formed by polymerizing amorphous aluminum oxide particles. With this configuration, since the connection between the filamentous bodies and the adhesive state between the filamentous bodies and the gas sensitive portion are strengthened, cracking and peeling of the coating layer can be more effectively suppressed.
〔実施形態〕
（ガス検知素子）
本発明の実施形態を図１に基づいて説明する。
図１に示すように、本実施形態のガス検知素子１は、検出電極としての金属電極線２と、被検知ガスと接触自在に設けられた略球形のガス感応部４と、ガス感応部４を加熱する加熱部としてのコイル状ヒータ３とを備える。尚、金属電極線２は、コイル状ヒータ３を兼ねるものであり、これらは一体として構成されている。
Embodiment
(Gas detection element)
An embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 1, the gas detection element 1 of the present embodiment includes a metal electrode wire 2 as a detection electrode, a substantially spherical gas sensitive part 4 provided so as to be in contact with a gas to be detected, and a gas sensitive part 4. And a coiled heater 3 as a heating unit for heating the heater. The metal electrode wire 2 also serves as the coil heater 3 and is configured as an integral unit.
金属電極線２及びコイル状ヒータ３の材質としては、例えば、白金、又は白金にロジウム等を添加したもの等を適宜選択して使用することができるが、これらに限定されるものではない。また、コイル状ヒータ３のコイル径や巻き数等については図示したものに限らず必要に応じて適宜設定して良い。 As a material of the metal electrode wire 2 and the coiled heater 3, for example, platinum or a material obtained by adding rhodium or the like to platinum can be appropriately selected and used. However, the material is not limited thereto. Further, the coil diameter, the number of turns, and the like of the coiled heater 3 are not limited to those shown in the drawings, and may be appropriately set as necessary.
ガス感応部４は、金属酸化物半導体から構成されている。そのような金属酸化物半導体としては、例えば、酸化スズ、酸化インジウム、酸化チタン、酸化亜鉛、酸化鉄、又は酸化セリウム等の一種又は二種以上からなるものが挙げられ、被検知ガスの種類に応じて任意に選択可能である。 The gas sensitive part 4 is comprised from the metal oxide semiconductor. Examples of such a metal oxide semiconductor include one or two or more of tin oxide, indium oxide, titanium oxide, zinc oxide, iron oxide, cerium oxide, and the like. It can be arbitrarily selected depending on the case.
ガス感応部４の外周面には、無定形の酸化アルミニウム（Ａｌ2Ｏ3）を含む被覆層５が設けられている。被覆層５の厚みと比表面積は、有機シリコーンガスを選択的に確実に吸着することができ、被覆層５のひび割れや剥離が生じ難く、尚且つ被検知ガスが留まり難い厚みであれば特に限定されるものではないが、被覆層５の厚みはおよそ３０ｎｍ〜９００ｎｍに設定することが望ましく、好ましくは５０ｎｍ〜４００ｎｍである。また、被覆層５の比表面積（ｍ2/ｇ）は、１００ｍ2/ｇ〜２５０ｍ2/ｇに設定することが望ましく、好ましくは１５０ｍ2/ｇ〜２００ｍ2/ｇである。 A coating layer 5 containing amorphous aluminum oxide (Al 2 O 3 ) is provided on the outer peripheral surface of the gas sensitive portion 4. The thickness and specific surface area of the coating layer 5 are particularly limited as long as the organic silicone gas can be selectively and reliably adsorbed, the coating layer 5 is not easily cracked or peeled, and the gas to be detected is difficult to stay. However, the thickness of the coating layer 5 is desirably set to approximately 30 nm to 900 nm, and preferably 50 nm to 400 nm. The specific surface area of the coating layer 5 (m 2 / g) is preferably set to 100m 2 / g~250m 2 / g, preferably from 150m 2 / g~200m 2 / g.
被覆層５は、無定形の酸化アルミニウムを主成分とするものであり、その他の成分として、結晶構造を有するα及びγ−酸化アルミニウムの少なくともいずれか一方を含むものであっても良い。また、無定形の酸化アルミニウムの表面にパラジウム（Ｐｄ）触媒等の金属触媒を担持させても良い。 The coating layer 5 is mainly composed of amorphous aluminum oxide, and may include at least one of α and γ-aluminum oxide having a crystal structure as other components. Further, a metal catalyst such as a palladium (Pd) catalyst may be supported on the surface of amorphous aluminum oxide.
本発明における無定形の酸化アルミニウムとは、α及びγ−酸化アルミニウムのような結晶構造を有しないものであって、図６、図７、図１１、図１２に示すように、その粒子が重合してできた糸状体が三次元的に絡み合うようにして羽毛状態を形成するものを言う。 The amorphous aluminum oxide in the present invention does not have a crystal structure like α and γ-aluminum oxide, and as shown in FIGS. 6, 7, 11, and 12, the particles are polymerized. This means that the formed filaments are intertwined three-dimensionally to form a feather state.
被検知ガスとしては、例えば、メタンガス、液化石油ガス（ＬＰＧ）、水素、一酸化炭素、硫化水素、フロンガス、アンモニア、その他の可燃性ガス、毒性ガス等が挙げられるが、これらに限定されるものではない。 Examples of the gas to be detected include methane gas, liquefied petroleum gas (LPG), hydrogen, carbon monoxide, hydrogen sulfide, Freon gas, ammonia, other flammable gases, toxic gases, and the like, but are not limited thereto. is not.
（製造方法）
次いで、ガス検知素子１の製造方法について説明する。
先ず、金属電極線２のコイル状ヒータ３の部分を金属酸化物半導体中に埋設させて球状に成形した後、焼成してガス感応部４を形成する。このとき例えば、金属電極線２の線径がおよそ１０μｍ〜５０μｍであって、コイル状ヒータ３のコイル径が１００μｍ〜５００μｍであり、巻き数が６回〜２０回である場合、ガス感応部４の球径はおよそ２００μｍ〜１０００μｍである。
(Production method)
Next, a method for manufacturing the gas detection element 1 will be described.
First, the portion of the coil heater 3 of the metal electrode wire 2 is embedded in a metal oxide semiconductor and formed into a spherical shape, and then fired to form the gas sensitive portion 4. At this time, for example, when the wire diameter of the metal electrode wire 2 is approximately 10 μm to 50 μm, the coil diameter of the coiled heater 3 is 100 μm to 500 μm, and the number of turns is 6 to 20 times, the gas sensitive part 4 The sphere diameter is approximately 200 μm to 1000 μm.
次いで、無定形の酸化アルミニウムを含むアルミナゾルを水で希釈する。そのアルミナゾルの希釈液の液滴をガス感応部４の外周面に滴下する。アルミナゾルの希釈液でガス感応部４の外周面を覆って乾燥させた後、５５０℃〜６５０℃（６５０℃付近）で焼成して被覆層５を形成する。 Next, the alumina sol containing amorphous aluminum oxide is diluted with water. A droplet of the diluted solution of alumina sol is dropped on the outer peripheral surface of the gas sensitive portion 4. The outer peripheral surface of the gas sensitive part 4 is covered with a diluted solution of alumina sol and dried, and then fired at 550 ° C. to 650 ° C. (around 650 ° C.) to form the coating layer 5.
（１）ガス検知素子の作製
白金線のコイル状ヒータの部分を酸化スズ中に埋設させて球状に成形する。そして、およそ８００℃で２時間焼成してガス感応部を形成した。図２〜図４は、ガス感応部の表面の状態を示している。
(1) Production of gas detection element A platinum wire coil-shaped heater is embedded in tin oxide and formed into a spherical shape. And it baked at about 800 degreeC for 2 hours, and formed the gas sensitive part. 2-4 has shown the state of the surface of a gas sensitive part.
無定形の酸化アルミニウムを含むアルミナゾルとして、以下の表１に示す組成及び性質を備えるものを使用した。尚、このアルミナゾルは、粘土変化が著しく、その粘性はチクソトロピックな性質を有する。 As an alumina sol containing amorphous aluminum oxide, one having the composition and properties shown in Table 1 below was used. This alumina sol has a remarkable clay change, and its viscosity has a thixotropic property.
上記アルミナゾルを、水で０．３重量％〜２０重量％（酸化アルミニウム含量として０．０３重量％〜２重量％）に希釈し、この希釈液の液滴を上述のガス感応部の表面に滴下して乾燥させた。最後に６５０℃付近で焼成して被覆層５を形成した。 The alumina sol is diluted with water to 0.3 wt% to 20 wt% (aluminum oxide content of 0.03 wt% to 2 wt%), and droplets of this diluted solution are dropped on the surface of the gas sensitive part. And dried. Finally, the coating layer 5 was formed by firing at around 650 ° C.
本実施例におけるガス検知素子として、被覆層の膜厚が３０ｎｍ及び９００ｎｍのものをそれぞれ作製した。図５〜図７は、被覆層の膜厚がおよそ３０ｎｍであるガス検知素子を示しており、図８〜図１０は、被覆層の膜厚がおよそ９００ｎｍであるガス検知素子を示している。 As the gas detection element in this example, ones having a coating layer thickness of 30 nm and 900 nm were prepared. 5 to 7 show a gas detection element having a coating layer thickness of about 30 nm, and FIGS. 8 to 10 show a gas detection element having a coating layer thickness of about 900 nm.
図５〜図７、図１１、及び図１２に示すように、ガス検知素子の被覆層５の表面において、無定形の酸化アルミニウムの粒子が重合してできた糸状体が、三次元的に互いに絡み合うようにして羽毛状態を形成している。 As shown in FIGS. 5 to 7, 11, and 12, the filaments formed by polymerizing amorphous aluminum oxide particles on the surface of the coating layer 5 of the gas detection element are three-dimensionally connected to each other. A feather state is formed so as to be intertwined.
（２）有機シリコーンガス（ヘキサメチルジシロキサン）における暴露試験
本発明のガス検知素子の有機シリコーンガスに対する耐被毒性能を確認するために暴露試験を実施した。試験を実施した試料を以下の表２に示す。
(2) Exposure test in organic silicone gas (hexamethyldisiloxane) An exposure test was carried out to confirm the poisoning resistance of the gas detection element of the present invention to organic silicone gas. The samples tested are shown in Table 2 below.
実施例１及び２は、上述の（１）ガス検知素子の作製の欄と同様の作製方法で作製したものであるが、実施例３は、無定形の酸化アルミニウムを含む被覆層にさらにパラジウム（Ｐｄ）触媒を含有させたものである。 Examples 1 and 2 were produced by the same production method as in the above-mentioned (1) Production of gas detection element, but in Example 3, a coating layer containing amorphous aluminum oxide was further coated with palladium ( Pd) A catalyst is contained.
比較例１は、被覆層を設けていない試料である。
比較例２及び３は、α−酸化アルミニウムを含むアルミナゾル材料を用いて被覆層を形成した試料である。
比較例４及び５は、γ−酸化アルミニウムを含むアルミナゾル材料を用いて被覆層を形成した試料である。
比較例６は、粉体状の酸化アルミニウムを用いて被覆層を形成した試料である。
上記試料（実施例１〜３、及び比較例１〜６）における被覆層以外の構成（ガス感応部及び金属電極線等）はいずれも、上述の（１）ガス検知素子の作製の欄で作製したものと同様である。
Comparative Example 1 is a sample without a coating layer.
Comparative Examples 2 and 3 are samples in which a coating layer was formed using an alumina sol material containing α-aluminum oxide.
Comparative Examples 4 and 5 are samples in which a coating layer was formed using an alumina sol material containing γ-aluminum oxide.
Comparative Example 6 is a sample in which a coating layer was formed using powdered aluminum oxide.
All the configurations (gas sensitive part, metal electrode wire, etc.) other than the coating layer in the above samples (Examples 1 to 3 and Comparative Examples 1 to 6) are prepared in the section of (1) Preparation of gas detection element. It is the same as what I did.
上記実施例１〜３、及び比較例１〜６に係るガス検知素子を備えるガスセンサを、空気、１０００ｐｐｍのメタンガス雰囲気下、３０００ｐｐｍのメタンガス雰囲気下、１％のメタンガス雰囲気下、１００ｐｐｍの水素ガス雰囲気下、及び１００ｐｐｍのエタノールガス雰囲気下において、１０ｐｐｍのヘキサメチルジシロキサンに所定時間（１０時間、２０時間、３０時間、及び５０時間）暴露させ、各所定時間における出力値（ｍＶ）を測定した。 The gas sensor including the gas detection elements according to Examples 1 to 3 and Comparative Examples 1 to 6 is air, under a 1000 ppm methane gas atmosphere, under a 3000 ppm methane gas atmosphere, under a 1% methane gas atmosphere, under a 100 ppm hydrogen gas atmosphere. In a 100 ppm ethanol gas atmosphere, 10 ppm of hexamethyldisiloxane was exposed to a predetermined time (10 hours, 20 hours, 30 hours, and 50 hours), and an output value (mV) at each predetermined time was measured.
図１３〜図２１の太線部分に示される、３０００ｐｐｍのメタンガス雰囲気下における初期の出力値、即ちヘキサメチルジシロキサンの暴露時間が０時間のときの出力値を警報レベルとした場合、図１３及び図１５に示すように、実施例１及び実施例３のガス検知素子を備えるガスセンサは、１０ｐｐｍのヘキサメチルジシロキサンに５０時間暴露しても、被検知ガス（メタンガス、水素ガス、エタノールガス）が存在しない空気中では警報を発しない。 When the initial output value in the methane gas atmosphere of 3000 ppm, that is, the output value when the exposure time of hexamethyldisiloxane is 0 hour, shown in the bold line part of FIGS. As shown in FIG. 15, the gas sensor including the gas detection element of Example 1 and Example 3 has gas to be detected (methane gas, hydrogen gas, ethanol gas) even after being exposed to 10 ppm of hexamethyldisiloxane for 50 hours. No alarm is issued in the air.
これに対して図１６〜図２１に示すように、比較例１〜６では、暴露後３０時間以内に、被検知ガスが存在しない空気中で警報を発するようになる。特に、被覆層の厚みが実施例１及び３と同等の厚みを有する比較例４は、暴露後２５時間程度で空気中において警報を発するようになる。 On the other hand, as shown in FIGS. 16 to 21, in Comparative Examples 1 to 6, an alarm is issued in the air in which no gas to be detected exists within 30 hours after exposure. In particular, Comparative Example 4 having a coating layer thickness equivalent to that of Examples 1 and 3 gives an alarm in the air about 25 hours after exposure.
また、図１３に示すように、実施例１では空気中の５０時間暴露後の出力値が約１００ｍＶであるのに対して、図１５に示すように、実施例３では空気中の５０時間暴露後の出力値が約３０ｍＶであったため、パラジウム触媒を含有させることによってさらに有機シリコーンガスに対する耐被毒性能が向上することが分かる。 Further, as shown in FIG. 13, in Example 1, the output value after exposure in air for 50 hours is about 100 mV, whereas in Example 3, as shown in FIG. 15, exposure in air for 50 hours is performed. Since the later output value was about 30 mV, it can be seen that the poisoning resistance to the organosilicon gas is further improved by containing the palladium catalyst.
また、図１４、図１７、図１８、図２０、図２１に示すように、本発明の実施例２に係るガス検知素子、並びに、比較例２、３、５、６に係る従来のガス検知素子はいずれも、暴露後１０時間程度で被検知ガスが存在しない空気中で警報を発するようになる。 Further, as shown in FIGS. 14, 17, 18, 20, and 21, the gas detection element according to Example 2 of the present invention and the conventional gas detection according to Comparative Examples 2, 3, 5, and 6 are used. All the elements emit an alarm in the air in which no gas to be detected exists in about 10 hours after exposure.
即ち、実施例２に係るガス検知素子は、その被覆層の厚みが約３０ｎｍであり、従来のガス検知素子の被覆層の厚み（約５μｍ及び約５０μｍ）と比べて極端に薄いものであるにもかかわらず、有機シリコーンガスに対して従来のガス検知素子と同等の耐被毒性能を有することが分かる。 That is, the thickness of the coating layer of the gas detection element according to Example 2 is about 30 nm, which is extremely thin compared to the thickness of the coating layer of the conventional gas detection element (about 5 μm and about 50 μm). Nevertheless, it can be seen that the organosilicon gas has a poisoning resistance equivalent to that of the conventional gas sensing element.
以上より、本発明のガス検知素子は、その被覆層の厚みが従来のガス検知素子の被覆層の厚みと比べて極端に薄いものであるにもかかわらず、有機シリコーンガスに対して比較例のガス検知素子と同等以上の耐被毒性能を有することが分かる。 As described above, the gas detection element of the present invention has a comparative thickness compared to the organic silicone gas even though the thickness of the coating layer is extremely thinner than the thickness of the coating layer of the conventional gas detection element. It can be seen that the poisoning performance is equal to or better than that of the gas detection element.
（３）無通電放置における出力及び感度の変動
上記実施例１、比較例１、及び比較例３に係るガス検知素子を備えるガスセンサについて、無通電放置における出力及び感度の変動について試験を実施した。試験方法については以下の通りである。
所定の気温及び湿度において、空気に対する出力値を測定して、初期値（試験初日の測定値）を得る。その後、初期値を得たときと同じ気温及び湿度の条件下で無通電放置を行って、７日おきに空気に対する出力値を再測定する。この再測定を６回繰り返して、初期値に対する変化量（％）をプロットした。
また、メタンガス、フロンガス、及び水素ガスについても上記空気の場合と同様の試験を実施して、初期値に対する出力値の比を感度比（％）としてプロットした。
(3) Change in output and sensitivity when left unpowered With respect to the gas sensor including the gas detection element according to Example 1, Comparative Example 1, and Comparative Example 3, a test was conducted on the change in output and sensitivity when left unpowered. The test method is as follows.
An output value for air is measured at a predetermined temperature and humidity to obtain an initial value (measured value on the first test day). Thereafter, the device is left unpowered under the same temperature and humidity conditions as when the initial value was obtained, and the output value for air is remeasured every 7 days. This remeasurement was repeated 6 times, and the amount of change (%) with respect to the initial value was plotted.
Further, methane gas, chlorofluorocarbon gas, and hydrogen gas were also subjected to the same test as in the case of the air, and the ratio of the output value to the initial value was plotted as a sensitivity ratio (%).
図２２〜図２５は、気温３５℃、湿度６５％という高温高湿の条件下で実施されたときの結果を示すものであり、図２６〜図２９は、気温２０℃、湿度６０％という標準条件下で実施されたときの結果を示すものである。 FIGS. 22 to 25 show the results when the temperature is 35 ° C. and the humidity is 65%, and the results are shown in FIGS. 26 to 29. FIGS. 26 to 29 show the standard temperature 20 ° C. and humidity 60%. The results when carried out under conditions are shown.
図２２及び図２６に示すように、高温高湿条件下、及び標準条件下のいずれの条件下においても、本発明に係る実施例１は、試験期間全体（４９日間）に亘って、被覆層を有しない比較例１と略同等の空気に対する出力変動を示し、従来のガス検知素子に相当する比較例３と比べて、出力値の減少が著しく抑えられている。 As shown in FIGS. 22 and 26, Example 1 according to the present invention under the conditions of high temperature and high humidity and standard conditions, the coating layer was applied over the entire test period (49 days). The output fluctuation with respect to the air is substantially the same as that of Comparative Example 1 that does not include the gas, and the decrease in the output value is remarkably suppressed as compared with Comparative Example 3 that corresponds to the conventional gas detection element.
図２３に示すように、高温高湿条件下におけるメタンガスに対する感度変動については、実施例１は、被覆層を有しない比較例１と比べて感度が多少低下してくるものの、従来のガス検知素子に相当する比較例３と比べて感度の低下が抑えられている。また、図２７に示すように、標準条件下におけるメタンガスに対する感度変動については、実施例１は、被覆層を有しない比較例１と比べて感度が多少低下してくるものの、従来のガス検知素子に相当する比較例３とは略同等の感度を維持していた。 As shown in FIG. 23, with respect to the sensitivity variation with respect to methane gas under high temperature and high humidity conditions, the sensitivity of Example 1 is somewhat lower than that of Comparative Example 1 having no coating layer. As compared with Comparative Example 3 corresponding to the above, a decrease in sensitivity is suppressed. In addition, as shown in FIG. 27, the sensitivity fluctuation with respect to methane gas under standard conditions is somewhat lower in sensitivity than in Comparative Example 1 having no coating layer, but the conventional gas detection element. The substantially same sensitivity as Comparative Example 3 corresponding to was maintained.
図２４、図２５、図２８、図２９に示すように、高温高湿条件下、及び標準条件下のいずれの条件下においても、実施例１は、メタンガス及びフロンガスに対して、試験期間全体（４９日間）に亘って、被覆層を有しない比較例１と略同等の感度を示すと共に、従来のガス検知素子に相当する比較例３と比べて感度の低下が著しく抑えられている。即ち、本発明のガス検知素子は、従来のガス検知素子と比べて被覆層が薄く被検知ガスが被覆層から抜け易いため、無通電時におけるガス吸着が少なく、感度低下が抑えられていると考えられる。 As shown in FIG. 24, FIG. 25, FIG. 28, and FIG. 29, in any of the high-temperature and high-humidity conditions and the standard conditions, Example 1 shows that the entire test period ( 49 days), the sensitivity is substantially the same as that of Comparative Example 1 having no coating layer, and the decrease in sensitivity is significantly suppressed as compared with Comparative Example 3 corresponding to a conventional gas detection element. That is, the gas detection element of the present invention has a thinner coating layer than the conventional gas detection element, and the gas to be detected can easily escape from the coating layer. Conceivable.
（４）種々の被検知ガスに放置した後の初期安定時間の測定
上記実施例１、比較例１、及び比較例３に係るガス検知素子を備えるガスセンサについて、１０００ｐｐｍの種々の被検知ガス（メチルエチルケトン、エタノール、トルエン、１，２−ジクロロエタン）中に１５時間放置した直後に検出を始めてから出力値が安定するまでの時間（初期安定時間）を測定した。
尚、図３０において、初期値とは、上記被検知ガス中に放置する前のガスセンサの初期安定時間を意味する。また、試験後とは、上記被検知ガスに放置する試験を終えた後のガスセンサの初期安定時間を意味する。
(4) Measurement of initial stabilization time after being left in various detected gases About 1000 ppm of various detected gases (methyl ethyl ketone) with respect to the gas sensor including the gas detecting elements according to Example 1, Comparative Example 1, and Comparative Example 3 above. , Ethanol, toluene, 1,2-dichloroethane) immediately after being left for 15 hours, the time from the start of detection to the stabilization of the output value (initial stabilization time) was measured.
In FIG. 30, the initial value means an initial stabilization time of the gas sensor before being left in the gas to be detected. Further, “after the test” means an initial stabilization time of the gas sensor after the test to be left in the detected gas is finished.
図３０に示すように、比較例１では、種々の被検知ガス（メチルエチルケトン、エタノール、トルエン、１，２−ジクロロエタン）に放置した場合の初期安定時間は、初期値及び試験後における初期安定時間とほとんど変わらず、検出感度の回復に時間がかからない。比較例１は被覆層を有しないため、被検知ガスが被覆層内に留まるということがなく検出感度が短時間で回復する。 As shown in FIG. 30, in Comparative Example 1, the initial stabilization time when left in various detected gases (methyl ethyl ketone, ethanol, toluene, 1,2-dichloroethane) is the initial value and the initial stabilization time after the test. Almost unchanged, recovery of detection sensitivity does not take time. Since Comparative Example 1 does not have a coating layer, the detection sensitivity is recovered in a short time without the gas to be detected remaining in the coating layer.
比較例３では、種々の被検知ガス（メチルエチルケトン、エタノール、トルエン、１，２−ジクロロエタン）に放置した場合の初期安定時間が、初期値及び試験後における初期安定時間に比べて極端に大きくなり、検出感度の回復に時間がかかる。これは、比較例３のガス検知素子における被覆層の厚みが大きく、被検知ガスが被覆層から抜け難く留まり易いためと考えられる。 In Comparative Example 3, the initial stabilization time when left in various detected gases (methyl ethyl ketone, ethanol, toluene, 1,2-dichloroethane) becomes extremely large compared to the initial value and the initial stabilization time after the test, Recovery of detection sensitivity takes time. This is presumably because the thickness of the coating layer in the gas detection element of Comparative Example 3 is large, and the gas to be detected does not easily escape from the coating layer and remains easily.
一方、本発明に係る実施例１では、種々の被検知ガス（メチルエチルケトン、エタノール、トルエン、１，２−ジクロロエタン）に放置した場合の初期安定時間は、初期値及び試験後における初期安定時間とほとんど変わらず、検出感度の回復に時間がかからない。即ち、本発明のガス検知素子は、従来のガス検知素子と比べて被覆層が薄く被検知ガスが被覆層から抜け易いため、無通電時におけるガス吸着が少なく、検出感度が短時間で回復するものと考えられる。 On the other hand, in Example 1 according to the present invention, the initial stabilization time when left in various detected gases (methyl ethyl ketone, ethanol, toluene, 1,2-dichloroethane) is almost the same as the initial value and the initial stabilization time after the test. It doesn't change and it doesn't take time to recover the detection sensitivity. That is, the gas detection element of the present invention has a thinner coating layer than the conventional gas detection element, and the gas to be detected can easily escape from the coating layer. It is considered a thing.
以上説明したように、本発明のガス検知素子は、可燃性ガスや毒性ガス等のガスを検知する半導体式ガスセンサにおいて有用であり、半導体式ガスセンサの製造業等において実施し得るものである。 As described above, the gas detection element of the present invention is useful in a semiconductor type gas sensor that detects a gas such as a flammable gas or a toxic gas, and can be implemented in the manufacturing industry of a semiconductor type gas sensor.
１ ガス検知素子
２ 金属電極線
３ コイル状ヒータ
４ ガス感応部
５ 被覆層
DESCRIPTION OF SYMBOLS 1 Gas detection element 2 Metal electrode wire 3 Coiled heater 4 Gas sensitive part 5 Coating layer
Claims (2)
前記ガス感応部の外周面に、無定形の酸化アルミニウムを含む被覆層を設けてあるガス検知素子。 A gas detection element comprising a detection electrode, a gas sensitive part including a metal oxide semiconductor, and a heating part for heating the gas sensitive part,
A gas detection element in which a coating layer containing amorphous aluminum oxide is provided on an outer peripheral surface of the gas sensitive portion.
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| JP2008145148A (en) * | 2006-12-07 | 2008-06-26 | Fuji Electric Fa Components & Systems Co Ltd | Thin-film gas sensor and manufacturing method therefor |
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