JP2012118159A - Proximity exposure apparatus, foreign matter detection method and method of manufacturing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a proximity exposure apparatus capable of detecting a foreign matter on a substrate with high accuracy regardless of the use environment.SOLUTION: The proximity exposure apparatus comprises: two foreign matter detectors 80,81, each having outgoing radiation portions 80a, 81a for radiating laser beams LB1, LB2 along the surfaces of substrates W arranged in a transfer direction of a substrate holding portion 21 and held by the substrate holding portion 21, and having light-receiving portions 80b, 81b for receiving the laser beams; a proportional arithmetic portion 83a for amplifying detection signals of the laser beams LB1, LB2 received by the light-receiving portions 80b, 81b of the two foreign matter detectors 80, 81; and a difference computation portion 83b for calculating a difference between the two amplified detection signals of the laser beams LB1, LB2 to determine whether a foreign matter 82 exists or not.

Description

  The present invention relates to a proximity exposure apparatus, a foreign matter detection method, and a substrate manufacturing method, and more particularly, to a proximity exposure apparatus and a foreign matter detection method used when manufacturing a large flat panel display such as a liquid crystal display panel or a plasma display. The present invention also relates to a method for manufacturing a substrate.

  Proximity exposure equipment that manufactures color filters for large flat display panels such as liquid crystal display panels and plasma display panels irradiates light emitted from a light source such as a high-pressure mercury lamp onto a substrate as an exposed material through a mask. Then, the mask pattern drawn on the mask is exposed and transferred to the substrate.

  The pattern that is exposed and transferred to the substrate is an extremely fine pattern. If foreign matter such as dust or dirt adheres to the substrate that is exposed and transferred, the performance of the color filter or the like is impaired, and an expensive substrate material is used. Is a wasteful economic loss. As a substrate processing device that can detect foreign substances adhering to the substrate, the laser light emitted from multiple detection sensors is focused at different positions to improve detection limit accuracy and to provide multiple effective detection ranges. A technique is disclosed in which a wide range is inspected by sharing the detection sensors (see, for example, Patent Document 1).

  In addition, if exposure transfer is repeated, the mask expands due to heat from the light source, and a magnification error occurs when the mask pattern is exposed and transferred to the substrate, and the dimensional accuracy and pattern pitch accuracy are impaired. . Unlike the method of changing the magnification in the optical system that is used in the projection exposure apparatus, it is most effective to directly change the dimensions of the substrate or the mask in order to correct the magnification error generated in the proximity exposure apparatus. is there. The dimensional change of the substrate or mask can be realized by heating or cooling the substrate or mask to cause thermal deformation. However, since the mask is generally formed of a material having a small coefficient of thermal expansion, it is difficult to correct by heat. On the other hand, since a glass having a relatively large thermal expansion coefficient is used for the substrate, the magnification error can be corrected by controlling the temperature of the substrate.

  As an exposure method that controls the temperature of the substrate held by the substrate holder, the cooling water, which is a heat medium, is passed through the substrate holder to suppress the temperature rise of the substrate, which enables dimensional accuracy and pattern pitch. An exposure method for improving accuracy is known (for example, see Patent Document 2). In the exposure method described in Patent Document 2, in order to suppress temperature variation in the surface of the substrate holding part, the cooling water paths are multi-systemed to shorten the path length per system, and the injection part of each path. The temperature difference between the outlet and the outlet is reduced to reduce uneven temperature distribution, or the injection side and outlet side of the path are always placed adjacent to each other to offset the low temperature on the injection side and the high temperature on the outlet side. Let the temperature average.

  Further, a proximity exposure apparatus is disclosed in which the temperature of the mask is detected by a mask temperature sensor, and the substrate holder is heated by an electric heating device so as to correct a magnification error component caused by thermal deformation of the mask (for example, And Patent Document 3).

JP 2005-85773 A JP 2000-98618 A JP 2006-78673 A

  By the way, in the laser transmission type foreign matter detection sensor, the detection signal is influenced by the flow of the laser transmission medium (air) and the temperature difference. For example, if there is a flow of a transmission medium in the optical path of the laser beam, there is a problem that the optical path changes and affects the amount of received light, so that a noise signal is superimposed on the detection signal and the detection accuracy is lowered. For this reason, in order to maintain detection accuracy, there exists a problem that it is limited to the use in the stable environment without the flow of a transmission medium, or a temperature change. The substrate processing apparatus disclosed in Patent Document 1 attempts to prevent detection accuracy and resolution from being lowered by narrowing the laser beam. However, the above problems are not solved, and the noise signal is reduced to reduce the S / N. It is required to increase the ratio.

  In a proximity exposure apparatus that sequentially exposes a plurality of patterns on a large-sized substrate, the substrate holder (substrate) has a different temperature for each area corresponding to each shot in order to correct a magnification error caused by thermal deformation of the mask. It is most effective to perform different magnification correction for each shot. However, the exposure method described in Patent Document 2 divides the substrate holding unit into a plurality of areas and flows cooling water in parallel to reduce temperature unevenness between the areas. However, no consideration has been given to controlling the temperature different for each area and performing different magnification correction for each shot.

  In the proximity exposure apparatus described in Patent Document 3, there is no description about dividing the substrate holding portion into a plurality of areas and individually adjusting the temperature for each shot. Therefore, it is possible to correct the magnification error for the entire substrate at once, but it is not possible to perform different magnification correction for each divided area. In addition, the magnification error is not an error directly measured from the pattern of the substrate that has been exposed and transferred, but an estimated value estimated from the measured temperature of the mask, and the estimated value of the magnification error is not necessarily highly accurate, There was room for improvement.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a proximity exposure apparatus and a foreign matter detection method that can detect foreign matter on a substrate with high accuracy without being affected by the use environment. There is to do. Another object of the present invention is to individually adjust the temperature of the substrate holder for each area, and to finely correct the magnification error due to the thermal expansion of the mask when the mask pattern is exposed and transferred to the substrate. It is an object of the present invention to provide a proximity exposure apparatus and a substrate manufacturing method that can be used.

The above object of the present invention can be achieved by the following constitution.
(1) A substrate holding unit that holds a substrate, a mask holding unit that holds a mask so as to face the substrate, and an illumination optical system that irradiates light for pattern exposure toward the mask, A proximity exposure apparatus that exposes and transfers a pattern of the mask onto a substrate,
An emission unit that is arranged side by side in the conveyance direction of the substrate holding unit and emits a laser beam along the surface of the substrate held by the substrate holding unit, and a light receiving unit that receives the laser beam, respectively. Two foreign matter detectors,
A proportional calculation unit that amplifies a detection signal of the laser beam received by each light receiving unit of the two foreign matter detectors;
In order to determine the presence or absence of foreign matter on the substrate, a difference calculation unit that calculates a difference between detection signals of the two amplified laser beams;
A proximity exposure apparatus comprising:
(2) A foreign matter detection method using the proximity exposure apparatus according to (1),
Receiving each laser beam emitted along the surface of the substrate to be transported using the two foreign matter detectors, and taking out two detection signals;
Proportionally calculating to amplify the two detection signals;
Calculating a difference for calculating a difference between the two detection signals;
A foreign matter detection method comprising: determining whether or not foreign matter exists on the substrate from a detection waveform based on the difference.
A substrate holding unit for holding a substrate; a mask holding unit for holding a mask so as to face the substrate;
An illumination optical system that emits light for pattern exposure toward the mask, and a proximity exposure apparatus that exposes and transfers the pattern of the mask onto the substrate,
A plurality of heat medium flow paths that are provided in the substrate holding section and allow the heat medium to pass through;
A plurality of temperature sensors provided on the inlet side and the outlet side of the plurality of heat medium flow paths to detect the inlet temperature and the outlet temperature of the heat medium;
A flow rate adjusting mechanism that controls the flow rate of the heat medium that is provided in the plurality of heat medium channels and passes through the heat medium channel;
A plurality of heating devices provided on the inlet side of the plurality of heat medium flow paths to heat the heat medium;
One chiller that collectively cools the heat medium circulating from each outlet of the plurality of heat medium flow paths and sends it to each inlet of the plurality of heat medium flow paths;
A pressure accumulator that makes the pressure of the heat medium provided at the discharge port of the chiller constant;
A magnification error calculator that calculates a magnification error when the pattern of the mask is exposed and transferred to the substrate based on the inspection result of the substrate on which the pattern is exposed and transferred;
A correction temperature calculation unit for calculating a correction temperature of the substrate holding unit for correcting the magnification error;
A proximity exposure apparatus comprising: a temperature control unit that controls the heating device and adjusts the temperature of the substrate holding unit to the correction temperature via the heat medium.
(4) The proximity exposure apparatus exposes and transfers the pattern of the mask to the substrate while relatively moving the substrate holding unit and the mask holding unit in steps.
The proximity exposure apparatus according to (3), wherein the plurality of heat medium flow paths are formed at each step position where the mask faces the substrate holding unit.
(5) The heat medium flow path is formed in a lattice shape communicating with each other in the substrate holding portion,
The proximity exposure apparatus according to (3) or (4), wherein the flow rate adjusting mechanism is disposed on an inlet side and an outlet side of the plurality of heat medium flow paths.
(6) A method for manufacturing a substrate comprising the proximity exposure apparatus according to any one of (3) to (5),
Detecting an inlet temperature and an outlet temperature of each heat medium of the plurality of heat medium flow paths by the plurality of temperature sensors;
Calculating a magnification error when exposing and transferring the pattern of the mask to the substrate based on the inspection result of the substrate on which the pattern is exposed and transferred;
Calculating a correction temperature of the substrate holder based on the calculated magnification error;
The heating device heats the heat medium based on the temperature of the heat medium detected by the plurality of temperature sensors, and the flow rate adjusting mechanism controls the flow rate of the heat medium to control the temperature of the substrate holding unit. Adjusting the correction temperature to correct the magnification error;
A method for manufacturing a substrate, comprising:

  According to the proximity exposure apparatus and the foreign matter detection method of the present invention, the detection signals detected by a plurality of foreign matter detectors are amplified and then the difference is calculated. It is possible to cancel the noise signal superimposed on the detection signal, increase the S / N ratio, and detect foreign matter with high accuracy.

  Further, according to the proximity exposure apparatus and the substrate manufacturing method of the present invention, the substrate on which the pattern is exposed and transferred is directly inspected to determine the magnification error, and the correction temperature of the substrate holding portion (substrate) is set based on the magnification error. Since the calculation is performed, the magnification error and the correction temperature determined based on the error are obtained with high accuracy. In addition, the temperature and flow rate of the heat medium that passes through the plurality of heat medium flow paths provided in the substrate holder are individually adjusted for each area, and the temperature at an arbitrary position of the substrate holder is adjusted to each correction temperature. Since the magnification error is corrected with high accuracy, exposure transfer can be performed with high accuracy.

It is a partial exploded perspective view for demonstrating the division | segmentation successive proximity exposure apparatus which concerns on 1st Embodiment of this invention. It is a front view of the division | segmentation successive proximity exposure apparatus shown in FIG. It is sectional drawing of a mask stage. (A) is a plan view of a divided sequential proximity exposure apparatus in which a pair of foreign matter detectors are disposed. (B) is a side view showing the positional relationship between the foreign matter attached to the substrate and the laser beam. (A) is a detection waveform detected by a foreign matter detection sensor, (b) is a detection waveform detected by a background sensor, and (c) is detected by a foreign matter detection sensor and a background sensor. It is a waveform of the difference between the two detection signals. It is a figure for demonstrating the position where the foreign material detector based on the modification of 1st Embodiment is arrange | positioned. It is a block diagram of the heat medium flow path and temperature control apparatus which are arrange | positioned at the board | substrate holding part of the division | segmentation successive proximity exposure apparatus which concerns on 2nd Embodiment of this invention. It is a block diagram of the temperature adjustment apparatus which correct | amends a magnification error. It is a block diagram of the heat medium flow path and temperature control apparatus which are arrange | positioned at the board | substrate holding part of the division | segmentation successive proximity exposure apparatus which concerns on 3rd Embodiment of this invention. It is a block diagram of the heat-medium flow path and temperature control apparatus which are arrange | positioned at the board | substrate holding part of the division | segmentation successive proximity exposure apparatus which concerns on 4th Embodiment of this invention. It is explanatory drawing which shows the state by which the board | substrate holding | maintenance part of FIG. 10 is controlled by correction | amendment temperature.

  Embodiments of a proximity exposure apparatus according to the present invention will be described below in detail with reference to the drawings.

(First embodiment)
As shown in FIG. 1, the divided successive proximity exposure apparatus PE according to the first embodiment includes a mask stage 10 that holds a mask M, a substrate stage 20 that holds a glass substrate (material to be exposed) W, and FIG. And an illumination optical system 70 for irradiating light for pattern exposure.

  Note that a glass substrate W (hereinafter simply referred to as “substrate W”) is disposed to face the mask M, and a surface (on the opposite surface side of the mask M) for exposing and transferring a mask pattern drawn on the mask M. ) Is coated with resist.

  The mask stage 10 is a mask stage base 11 in which a rectangular opening 11a is formed at the center, and a mask holding part that is mounted on the opening 11a of the mask stage base 11 so as to be movable in the X axis, Y axis, and θ directions. A mask holding frame 12 and a mask driving mechanism 16 that is provided on the upper surface of the mask stage base 11 and adjusts the position of the mask M by moving the mask holding frame 12 in the X axis, Y axis, and θ directions. .

  The mask stage base 11 is supported by a column 51 standing on the apparatus base 50 and a Z-axis moving device 52 provided at the upper end of the column 51 so as to be movable in the Z-axis direction (see FIG. 2). It is arranged above the stage 20.

  As shown in FIG. 3, a plurality of planar bearings 13 are arranged on the upper surface of the peripheral edge of the opening 11a of the mask stage base 11, and the mask holding frame 12 has a flange 12a provided at the outer peripheral edge of the upper end. It is mounted on the flat bearing 13. As a result, the mask holding frame 12 is inserted into the opening 11a of the mask stage base 11 through a predetermined gap, so that the mask holding frame 12 can move in the X axis, Y axis, and θ directions by the gap.

  A chuck portion 14 that holds the mask M is fixed to the lower surface of the mask holding frame 12 via a spacer 15. The chuck portion 14 is provided with a plurality of suction nozzles 14a for sucking the peripheral portion of the mask M on which the mask pattern is not drawn, and the mask M is not shown in the drawing through the suction nozzle 14a. It is detachably held on the chuck portion 14 by the apparatus. The chuck portion 14 can move in the X axis, Y axis, and θ directions with respect to the mask stage base 11 together with the mask holding frame 12.

  The mask driving mechanism 16 includes two Y-axis direction driving devices 16y attached to one side along the X-axis direction of the mask holding frame 12, and one X-axis attached to one side along the Y-axis direction of the mask holding frame 12. Direction drive device 16x.

  The Y-axis direction driving device 16y is installed on the mask stage base 11, and has a driving actuator (for example, an electric actuator) 16a having a rod 16b that expands and contracts in the Y-axis direction, and a pin support mechanism 16c at the tip of the rod 16b. And a guide rail 16e attached to a side portion of the mask holding frame 12 along the X-axis direction and movably attached to the slider 16d. The X-axis direction drive device 16x has the same configuration as the Y-axis direction drive device 16y.

  In the mask drive mechanism 16, the mask holding frame 12 is moved in the X-axis direction by driving one X-axis direction drive device 16x, and the two Y-axis direction drive devices 16y are driven equally. The mask holding frame 12 is moved in the Y axis direction. In addition, the mask holding frame 12 is moved in the θ direction (rotated about the Z axis) by driving one of the two Y-axis direction driving devices 16y.

  Further, on the upper surface of the mask stage base 11, as shown in FIG. 1, a gap sensor 17 for measuring a gap between the opposing surfaces of the mask M and the substrate W, and a mounting position of the mask M held by the chuck portion 14. And an alignment camera 18 for confirming the above. The gap sensor 17 and the alignment camera 18 are held so as to be movable in the X-axis and Y-axis directions via the moving mechanism 19 and are arranged in the mask holding frame 12.

  On the mask holding frame 12, as shown in FIG. 1, aperture blades 38 are provided at both ends in the X-axis direction of the opening 11a of the mask stage base 11 to shield both ends of the mask M as necessary. It is done. The aperture blade 38 is movable in the X-axis direction by an aperture blade drive mechanism 39 including a motor, a ball screw, a linear guide, and the like, and adjusts the shielding area at both ends of the mask M. The aperture blades 38 are provided not only at both ends of the opening 11a in the X-axis direction but also at both ends of the opening 11a in the Y-axis direction.

  As shown in FIGS. 1 and 2, the substrate stage 20 includes a substrate holding unit 21 that holds the substrate W, and a substrate that moves the substrate holding unit 21 in the X-axis, Y-axis, and Z-axis directions with respect to the apparatus base 50. Drive mechanism 22. The substrate holding unit 21 detachably holds the substrate W by a vacuum suction mechanism (not shown). The substrate drive mechanism 22 includes a Y-axis table 23, a Y-axis feed mechanism 24, an X-axis table 25, an X-axis feed mechanism 26, and a Z-tilt adjustment mechanism 27 below the substrate holding unit 21.

  As shown in FIG. 2, the Y-axis feed mechanism 24 includes a linear guide 28 and a feed drive mechanism 29, and a slider 30 attached to the back surface of the Y-axis table 23 extends 2 on the apparatus base 50. The Y-axis table 23 is driven along the guide rail 31 by a motor 32 and a ball screw device 33 while straddling the guide rail 31 through a rolling element (not shown).

  The X-axis feed mechanism 26 has the same configuration as the Y-axis feed mechanism 24 and drives the X-axis table 25 in the X direction with respect to the Y-axis table 23. Further, the Z-tilt adjustment mechanism 27 has one movable wedge mechanism formed by combining the wedge-shaped moving bodies 34 and 35 and the feed drive mechanism 36 at one end side in the X direction and two at the other end side. Consists of. The feed drive mechanisms 29 and 36 may be a combination of a motor and a ball screw device, or may be a linear motor having a stator and a mover. Further, the number of Z-tilt adjustment mechanisms 27 installed is arbitrary.

  Thereby, the substrate driving mechanism 22 feeds and drives the substrate holding unit 21 in the X direction and the Y direction, and moves the substrate holding unit 21 to Z so as to finely adjust the gap between the opposing surfaces of the mask M and the substrate W. Fine movement and tilt adjustment in the axial direction.

  Further, the apparatus base 50 is extended in the Y direction with respect to the exposure position EP below the mask holding frame 12, and two guide rails 31 and balls are provided on the apparatus base 50 extended in the Y direction. A screw device 33 is provided extending in the Y direction. Therefore, the Y-axis feed mechanism 24 of the substrate drive mechanism 22 is between the exposure position EP for exposing and transferring the pattern of the mask M to the substrate W and the standby position WP for attaching and detaching the substrate W to and from the substrate holder 21. The substrate holding part 21 is moved in the Y direction.

  Bar mirrors 61 and 62 are respectively attached to the X-direction side and Y-direction side of the substrate holding unit 21, and a total of three laser interferometers are installed at the Y-direction end and the X-direction end of the apparatus base 50. 63, 64, 65 are provided. As a result, the laser beams are irradiated from the laser interferometers 63, 64, 65 to the bar mirrors 61, 62, the laser beams reflected by the bar mirrors 61, 62 are received, and the laser beams and the laser beams reflected by the bar mirrors 61, 62 are received. The position of the substrate stage 20 is detected by measuring interference with light.

  As shown in FIG. 2, the illumination optical system 70 is emitted from the lamp 71, an ultra-high pressure mercury lamp 71 as a light emitting unit, a reflecting mirror 72 that emits light emitted from the lamp 71 with directivity. Integrator 73 to which the incident light flux is incident, plane mirror 75 that changes the direction of the light path emitted from the exit surface of integrator 73, collimation mirror 76, and light disposed between integrator 74 and plane mirror 75 is transmitted. An exposure control shutter 74 that is controlled to open and close so as to be shut off.

  In such an exposure apparatus PE, as shown in FIG. 3, the substrate W placed on the substrate stage 20 and the mask M having the mask pattern P held by the mask holding frame 12 are opposed to each other. The gap g between the surfaces is adjusted to a gap of about 100 μm, for example, and is arranged close to each other. The exposure light from the light source unit 73 is collected by the integrator 74, reflected by the plane mirror 75 and the collimation mirror 76, converted into plane light having a predetermined collimation angle, and is incident on the mask M. Then, the exposure light transmitted through the mask M exposes the photosensitive resin applied to the surface of the substrate W, and the mask pattern P of the mask M is exposed and transferred to the substrate W.

  Here, as shown in FIG. 4, the first foreign object detector 80 and the second foreign object detector 81 are arranged in parallel between the standby position WP and the exposure position EP. The first foreign object detector 80 functions as a foreign object detection detector, and the second foreign object detector 81 functions as a background detector.

  Each of the foreign object detectors 80 and 81 includes emission units 80a and 81a and light receiving units 80b and 81b arranged on both sides of the moving region of the substrate holding unit 21, and the laser beam LB1 irradiated from the emission units 80a and 81a. , LB2 are received by the light receiving portions 80b and 81b, respectively. The laser beams LB1 and LB2 from the emission units 80a and 81a are irradiated along the surface of the substrate W held by the substrate holding unit 21. Further, the interval d between the laser beams LB1 and LB2 irradiated from the first and second foreign matter detectors 80 and 81 is set to be larger than the size of the foreign matter 82 assumed to be detected.

  Thereby, the foreign material 82 does not simultaneously block the two laser beams LB1 and LB2. That is, the first and second foreign matter detectors 80 and 81 are designed so as not to detect the foreign matter 82 at the same time. Further, the positional relationship between the first and second foreign matter detectors 80 and 81 is desirably arranged at close positions so that the air flow and the ambient temperature are the same. Thereby, the noise signals of both foreign matter detectors 80 and 81 can be set to the same level.

  Further, the light receiving portions 80b and 81b of the first and second foreign matter detectors 80 and 81 have a difference between the detection signals of the laser beams LB1 and LB2 received by the light receiving portions 80b and 81b of the two foreign matter detectors 80 and 81, respectively. The calculation unit 83 is connected to the calculation unit 83, and an output unit 84 that outputs detection signals of the light receiving units 80b and 81b and processing results of the calculation unit 83 is connected to the calculation unit 83. Note that the arithmetic unit 83 may perform digital processing using an A / D converter, or may perform analog processing.

As shown in FIG. 4, when the substrate holding unit 21 that holds the substrate W moves from the standby position WP to the exposure position EP in the direction of arrow A, the foreign matter 82 adhering to the substrate W is first detected as a first foreign matter. The laser beam LB1 of the vessel 80 is cut off. As shown in FIG. 5A, the differential value waveform of the detection value of the first foreign object detector 80 is a large peak foreign object detection signal 86 and a noise signal due to the flow of the laser transmission medium (air) and temperature difference. The waveform 87 is superimposed. At this time, since the laser beam LB2 of the second foreign object detector 81 is not blocked by the foreign object 82, as shown in FIG. 5B, a noise signal 87 due to the flow of the laser transmission medium (air) and the temperature difference. Only the detected waveform is obtained.

  Here, the detection signal from the first foreign object detector 80 and the detection signal from the second foreign object detector 81 are amplified by the proportional calculation unit 83a, and the detection signal from the first foreign object detector 80 and the second foreign object are detected by the difference calculation unit 83b. When the difference between the detection signal from the detector 81 and the detection signal is obtained, a detection waveform having a high S / N ratio in which the noise signal 87 is canceled and only the foreign object detection signal 86 remains is obtained as shown in FIG. Thereby, the foreign material 82 can be detected with high accuracy without being influenced by the environment in which the foreign material detectors 80 and 81 are used, such as the flow of the laser beam LB and the temperature change.

  As described above, according to the proximity exposure apparatus of the present embodiment, the detection signals detected by the plurality of foreign matter detectors are amplified and then the difference is calculated, so the presence or absence of foreign matter is determined from the calculation result. The noise signal superimposed on the detection signal can be canceled to increase the S / N ratio, and foreign matter can be detected with high accuracy. The calculation unit 83 may set a threshold and determine that there is a foreign object when a difference value equal to or greater than the threshold is output.

  As shown in FIG. 6, in the proximity exposure apparatus, the substrate holder 21 of the substrate stage 20 does not move linearly from the standby position WP to the exposure position EP of the first shot in the X and Y directions, but in the Y direction. Only after moving a predetermined distance (arrow a), it moves in the X and Y directions (arrow b). For this reason, each of the foreign object detectors 80 and 81 is arranged in the vicinity of the range of the position to be moved only in the Y direction so as not to affect the tact time. In addition, the position where one of the emission parts 80a and 81a and the light receiving parts 80b and 81b (in this embodiment, the light receiving parts 80b and 81b) of the two sets of foreign matter detectors 80 and 81 is arranged in the vicinity of the standby position WP. The work loader WL that moves to transport and unload the substrate W is arranged so as not to interfere.

(Second Embodiment)
Next, a proximity exposure apparatus according to a second embodiment of the present invention will be described with reference to FIGS. As shown in FIG. 7, four heat medium flow paths 91 </ b> A, 91 </ b> B, 91 </ b> C, and 91 </ b> D are provided in parallel connection in the substrate holding unit 21 of the second embodiment. For example, when performing step exposure, the substrate holding unit 21 is divided into four exposure areas 21A, 21B, 21C, and 21D corresponding to each step position where the mask M faces the substrate holding unit 21 in each exposure step. The four heat medium flow paths 91A, 91B, 91C, 91D are arranged independently for each of the exposure areas 21A, 21B, 21C, 21D. Thereby, each exposure area 21A, 21B, 21C, 21D of the board | substrate holding | maintenance part 21 can be temperature-controlled independently. The heat medium flow paths 91A, 91B, 91C, and 91D are formed over substantially the entire exposure areas 21A, 21B, 21C, and 21D, and the temperatures of the exposure areas 21A, 21B, 21C, and 21D are respectively set. Each is considered to be uniform.

  Heating devices 92A, 92B, 92C, and 92D and inlet temperature sensors 93A, 93B, 93C, and 93D are provided on the upstream side (inlet) of each of the heat medium passages 91A, 91B, 91C, and 91D, respectively. Outlet temperature sensors 94A, 94B, 94C, 94D and flow rate adjusting mechanisms 95A, 95B, 95C, 95D are provided at the outlets, respectively.

  Each inlet of the heat medium passages 91 </ b> A, 91 </ b> B, 91 </ b> C, 91 </ b> D is integrated into one by a supply pipe 97 and connected to a discharge port 96 a of a chiller (circulation cooling device) 96. Further, the outlets of the heat medium passages 91A, 91B, 91C, and 91D are integrated into one return pipe 98 and connected to the suction port 96b of the chiller 96.

The chiller 96 supplies a heat medium such as cooling water cooled to a predetermined temperature lower than the temperature set in the substrate holding unit 21 from the discharge port 96a through the supply pipe 97 to each heat medium flow path 91A, 91B, 91C. , 91D to be sent to the respective inlets of the heat medium passages 91A, 91B, 91C, 91D, and the heat media returned from the outlets of the respective heat medium passages 91A, 91B, 91C, 91D are collected together. Then, the air is taken in from the suction port 96b through the return pipe 98 and circulated.
The heat medium is supplied from the chiller 96 with a constant pressure by the accumulator 99 provided at the discharge port 96a.

  The inlet temperature sensors 93A, 93B, 93C, and 93D measure the inlet temperature of the supplied heat medium, and the heating devices 92A, 92B, 92C, and 92D include electric heaters that can be controlled independently of each other, Based on the temperatures measured by the inlet temperature sensors 93A, 93B, 93C, and 93D, the heat medium supplied from the chiller 96 is individually heated to a predetermined temperature (for example, the set temperature of the substrate holding unit 21).

  Outlet temperature sensors 94A, 94B, 94C, and 94D measure the outlet temperature of the heat medium, and the flow rate adjusting mechanisms 95A, 95B, 95C, and 95D include flow rate control valves and the like, and a built-in valve mechanism (not shown). Is opened and closed to adjust the flow rate of the heat medium flowing through the heat medium flow paths 91A, 91B, 91C, 91D.

  Also, each heat medium flow path 91A, 91B, 91C, 91D, each heating device 92A, 92B, 92C, 92D, each inlet temperature sensor 93A, 93B, 93C, 93D, each outlet temperature sensor 94A, 94B, 94C, 94D, The flow rate adjusting mechanisms 95A, 95B, 95C, and 95D are connected in series.

  In FIG. 7, as representatively shown in the heat medium flow path 91B, a flow rate adjusting mechanism 95F that connects the flow path on the inlet side and the outlet side may be disposed, and this flow rate adjusting mechanism 95F will be described later. It has the same operation and function as those of the third embodiment. In this case, only the flow rate adjusting mechanism 95F may be arranged without providing the flow rate adjusting mechanism 95B. Further, such a flow rate adjusting mechanism 95F can also be provided in the remaining heat medium flow paths 91A, 91C, 91D.

  As illustrated in FIG. 8, the control device 101 includes a magnification error calculation unit 102, a correction temperature calculation unit 103, a temperature control unit 104, and a memory 105. The magnification error calculation unit 102 is a mask that is thermally expanded based on inspection data input from an inspection apparatus 106 that inspects the pattern of the substrate W that has been exposed and transferred, and reference pattern data stored in the memory 105. A magnification error generated when M is exposed and transferred to the substrate W is calculated.

  The correction temperature calculation unit 103 sets a temperature at which the substrate holding unit 21 (substrate W) is thermally expanded by the same thermal expansion amount as that of the mask M so as to correct the magnification error obtained by the magnification error calculation unit 102. Calculate as the correction temperature.

  Further, the temperature control unit 104 controls the heating devices 92A, 92B, 92C, and 92D based on the inlet temperature signal of the heat medium input from the inlet temperature sensors 93A, 93B, 93C, and 93D. A necessary amount of heat is generated so that the temperature of each exposure area 21A, 21B, 21C, 21D becomes the correction temperature.

  Next, the operation of the proximity exposure apparatus PE of this embodiment will be described. First, the inspection device 106 inspects the pattern of the substrate W onto which the mask pattern has been exposed and transferred by the irradiation light through the mask M to obtain pattern inspection data. Next, the magnification when the magnification error calculation unit 102 exposes and transfers the thermally expanded mask M to the substrate W based on the inspection data from the inspection apparatus 106 and the reference pattern data stored in the memory 105. Calculate the error. The correction temperature calculation unit 103 calculates a correction temperature at which the magnification error can be corrected by thermally expanding the substrate holding unit 21 (substrate W) with the same thermal expansion amount as the mask M, and the temperature control unit 104. To communicate.

  The temperature control unit 104 controls the temperature of the substrate holding unit 21 (substrate W) to be the correction temperature based on the correction temperature. For example, when the correction temperature of the heat medium flow path 91A disposed in the exposure area 21A is 24 ° C., the heat medium cooled to a temperature lower than the correction temperature, for example, 20 ° C. by the chiller 96 as shown in FIG. Is supplied from the discharge port 96a to the heat medium passage 91A through the supply pipe 97.

  At this time, the heating device 92A provided on the inlet side of the heat medium passage 91A is controlled so that the inlet temperature of the heat medium measured by the inlet temperature sensor 93A becomes the correction temperature (24 ° C.). The heating control of the heating device 92A is desirably control with high accuracy and responsiveness through feedback control such as P control and PID control.

  The heat medium heated to the correction temperature (24 ° C.) circulates in each heat medium flow path 91A to set the exposure area 21A of the substrate holder 21 to the correction temperature (24 ° C.), and then each heat medium flow path. It is returned to the chiller 96 from the suction port 96b through the return pipe 98 from the outlet 91A.

  At this time, the outlet temperature of the heat medium is measured by the outlet temperature sensor 94A and compared with the inlet temperature measured by the inlet temperature sensor 93A. When the difference between the inlet temperature and the outlet temperature is large, it is determined that the flow rate of the heat medium flowing through the heat medium flow path 91A having a large temperature difference is small, and the corresponding flow rate adjustment mechanism 95A has a built-in valve mechanism ( (Not shown) is opened to adjust the flow rate of the heat medium. Note that the above-described temperature control is similarly performed in each of the exposure areas 21B, 21C, and 21D in addition to the exposure area 21A.

  Then, the heat medium of about 24 ° C. returned to the chiller 96 through the return pipe 98 is cooled again to a temperature (20 ° C.) lower than the correction temperature by the chiller 96, and each of the heat medium is discharged from the discharge port 96 a through the supply pipe 97. It is supplied to the heat medium passages 91A, 91B, 91C, 91D. Thus, the heat medium is always cooled to a temperature (20 ° C.) lower than the correction temperature (24 ° C.) by the chiller 96 and supplied to the heat medium flow paths 91A, 91B, 91C, 91D, and the heating devices 92A, 92B, 92C and 92D are heated to the correction temperature and supplied to the heat medium flow paths 91A, 91B, 91C, and 91D, and therefore heat mediums with different correction temperatures are required for the heat medium flow paths 91A, 91B, 91C, and 91D. However, the temperature of the substrate holding part 21 can be managed to a predetermined temperature (correction temperature) with high accuracy.

  Further, each of the heat medium passages 91A, 91B, 91C, 91D is independently arranged so as to correspond to each of the exposure areas 21A, 21B, 21C, 21D of the substrate holding unit 21, and further, the heating device 92A, 92B, 92C, 92D, inlet temperature sensors 93A, 93B, 93C, 93D, and outlet temperature sensors 94A, 94B, 94C, 94D are also provided independently for each of the heat medium flow paths 91A, 91B, 91C, 91D. Therefore, it is possible to individually manage the temperatures of the exposure areas 21A, 21B, 21C, and 21D. This makes it possible to correct a different magnification error for each exposure area 21A, 21B, 21C, 21D (each shot).

(Third embodiment)
Next, a proximity exposure apparatus according to a third embodiment of the present invention will be described with reference to FIG. As shown in FIG. 9, in the proximity exposure apparatus PE of the third embodiment, bypasses 91E, 91F, 91G, and 91H are branched from four heat medium flow paths 91A, 91B, 91C, and 91D, respectively, arranged in parallel. And are connected in parallel. The bypasses 91E, 91F, 91G, and 91H are provided with flow rate adjusting mechanisms 95E, 95F, 95G, and 95H. Since other parts are the same as those of the proximity exposure apparatus PE of the second embodiment of the present invention, the same parts are denoted by the same or corresponding reference numerals, and the description thereof will be simplified or omitted. The same applies to the control mechanism shown in FIG.

  Although the temperature control of the substrate holding unit 21 in the proximity exposure apparatus PE of the present embodiment is also performed in the same manner as the proximity exposure apparatus PE of the second embodiment, the heat medium measured by the outlet temperature sensors 94A, 94B, 94C, 94D. If the outlet temperature of the refrigerant exceeds the set upper limit value, the flow rate adjusting mechanisms 95E, 95F of the bypasses 91E, 91F, 91G, 91H corresponding to the heat medium flow paths 91A, 91B, 91C, 91D exceeding the upper limit value. , 95G, 95H are actuated to close the valve opening, and the flow rate of the heat medium flowing through the corresponding heat medium flow passages 91A, 91B, 91C, 91D is increased so that the corresponding part of the substrate holding part 21 is corrected temperature. To maintain.

  On the other hand, when the outlet temperature of the heat medium measured by the outlet temperature sensors 94A, 94B, 94C, 94D is equal to or lower than the set lower limit value, the heat medium flow paths 91A, 91B, which are equal to or lower than the lower limit value. The valve mechanisms of the flow rate adjusting mechanisms 95E, 95F, 95G, and 95H corresponding to 91C and 91D are operated to open the valve opening, and the flow rate of the heat medium flowing through the corresponding heat medium flow paths 91A, 91B, 91C, and 91D is reduced. Thus, the corresponding portion of the substrate holder 21 is raised to the correction temperature.

  Further, if a flow meter (not shown) is arranged in each of the heat medium channels 91A, 91B, 91C, 91D to detect the flow rate of the heat medium, the measured flow rates of the heat medium channels 91A, 91B, 91C, 91D , The flow rate adjusting mechanisms 95E, 91F, 91G, 91H of the bypasses 91E, 91F, 91G, 91H connected to the heat medium flow paths 91A, 91B, 91C, 91D exceeding the flow rate upper limit value. It is also possible to open the valve opening by operating the 95H valve mechanism to reduce the flow rate of the heat medium flowing through the heat medium flow paths 91A, 91B, 91C, 91D. This prevents deterioration in exposure accuracy caused by vibrations generated by the heat medium having a flow rate higher than expected.

  Since other operations and effects are the same as those of the proximity exposure apparatus of the second embodiment, description thereof will be omitted. In this embodiment, the flow rate adjusting mechanisms 95A, 95B, 95C, and 95D provided in the heat medium flow paths 91A, 91B, 91C, and 91D and the bypass corresponding to the heat medium flow paths 91A, 91B, 91C, and 91D are also provided. The flow rate adjusting mechanisms 95E, 95F, 95G, and 95H of 91E, 91F, 91G, and 91H may be arranged at least one for each of the flow paths 91A, 91B, 91C, and 91D. Also good.

(Fourth embodiment)
Next, a proximity exposure apparatus according to a fourth embodiment of the present invention will be described with reference to FIGS. As shown in FIG. 10, the proximity exposure apparatus PE of the fourth embodiment has four inlet side heat medium flow paths 91a, 91b, 91c disposed through the substrate holding portion 21 in the horizontal direction in the figure. , 91d, and three outlet-side heat medium passages 91e, 91f, 91g disposed so as to penetrate in the vertical direction in the drawing. The four inlet side heat medium channels 91a, 91b, 91c, 91d and the three outlet side heat medium channels 91e, 91f, 91g communicate with each other at the intersections of the respective heat medium channels in the figure. It is formed in a lattice shape.

  Flow rate adjusting mechanisms 95a1 to 95d1, 95a2 to 95d2, heating devices 92a1 to 92d1, 92a2 to 92d2, and inlet temperature sensors 93a1 to 93d1 are provided at both ends of the four inlet side heat medium channels 91a, 91b, 91c, and 91d, respectively. , 93a2 to 93d2 are connected to the discharge port 96a of the chiller 96 through the supply pipe 97. In addition, outlet temperature sensors 93e1 to 93g1, 93e2 to 93g2, and flow rate adjusting mechanisms 95e1 to 95g1 and 95e2 to 95g2 are arranged at both ends of the three outlet side heat medium flow paths 91e, 91f, and 91g, respectively. The pipe 98 is connected to the suction port 96 b of the chiller 96.

  The substrate holding part 21 in which the heat medium flow paths 91 are arranged in this way is divided into six areas 21A, 21B, 21C, 21D, 21E, and 21F divided by broken lines in the figure, and each area 21A, 21B, In each of 21C, 21D, 21E, and 21F, two inlet-side heat medium channels 91a, 91b, 91c, and 91d and one outlet-side heat medium channel 91e, 91f, and 91g are arranged. .

  In order to adjust the temperature of each of the areas 21A, 21B, 21C, 21D, 21E, and 21F of the substrate holding unit 21 to the correction temperature, 14 flow rate adjustment mechanisms 95a1 to 95d1, 95a2 to 95d2, 95e1 to 95g1, and 95e2 to 95g2. It is possible to finely control the degree of opening by appropriately adjusting the opening. That is, as shown in FIG. 11, when the temperature of the area 21A is greatly adjusted and the temperature of the area 21B is slightly adjusted, the openings of the flow rate adjusting mechanisms 95a2, 95b2, and 95e1 are greatly opened, and the flow rate adjusting mechanism 95f1 is opened. This is accomplished by opening the degree moderately and closing the other flow adjustment mechanism 95.

  That is, the heat medium heated to the correction temperature by the heating devices 92a2 and 92b2 and flowing into the heat medium flow passages 91a and 91b passes through the area 21A through the flow rate adjusting mechanism 95e1 having a large opening degree. It flows out of the heat medium flow path 91e and greatly changes the temperature of the area 21A. Further, the heat medium having flowed into the heat medium flow paths 91a and 91b flows out of the heat medium flow path 91f through the area 21B through the flow rate adjusting mechanism 95f1 having a medium opening degree. Thereby, the temperature of the area 21A is largely adjusted, and the temperature of the area 21B is slightly adjusted.

As described above, the flow rate adjusting mechanisms 95a1 to 95d1, 95a2 to 95d2, 95e1 to 95g1, and 95e2 to 95g2 are appropriately adjusted to open the inlet-side heat medium channels 91a, 91b, 91c, and 91d and the outlets. By adjusting the flow rate of the heat medium flowing through the side heat medium passages 91e, 91f, 91g, the temperature at an arbitrary position of the substrate holder 21 can be finely adjusted. The temperature adjusting area can simultaneously correspond to a plurality of places, and the plurality of areas may be continuous areas or separated areas. In addition, by arranging the heat medium flow passages 91 of the substrate holding unit 21 in a lattice shape, the area of the substrate holding unit 21 can be freely set corresponding to the number of shots flexibly.
Since other operations and effects are the same as those of the proximity exposure apparatus of the second embodiment, description thereof will be omitted.

  In addition, this invention is not limited to each embodiment mentioned above, A deformation | transformation, improvement, etc. are possible suitably. For example, in the above-described embodiment, the proximity exposure apparatus has been described. However, the present invention is not limited to this, and can be similarly applied as long as the substrate has a structure that is held by the substrate holding unit. Have the same effect.

12 Mask holding frame (mask holding part)
21 Substrate holder 70 Illumination optical system 80, 81 Foreign matter detector 80b, 81b Light receiving portion 82 Foreign matter 91 Heat medium flow path 92 Heating device 93, 94 Temperature sensor 95 Flow rate adjusting mechanism 96 Chiller 96a Discharge port 99 Accumulator 102 Magnification error calculation Unit 103 correction temperature calculation unit 104 temperature control unit 106 inspection apparatus LB laser beam M mask PE proximity exposure apparatus W substrate

Claims (6)

A substrate holding unit that holds the substrate, a mask holding unit that holds the mask so as to face the substrate, and an illumination optical system that irradiates light for pattern exposure toward the mask. A proximity exposure apparatus that exposes and transfers a mask pattern,
An emission unit that is arranged side by side in the conveyance direction of the substrate holding unit and emits a laser beam along the surface of the substrate held by the substrate holding unit, and a light receiving unit that receives the laser beam, respectively. Two foreign matter detectors,
A proportional calculation unit that amplifies a detection signal of the laser beam received by each light receiving unit of the two foreign matter detectors;
In order to determine the presence or absence of foreign matter on the substrate, a difference calculation unit that calculates a difference between detection signals of the two amplified laser beams;
A proximity exposure apparatus comprising: A foreign matter detection method using the proximity exposure apparatus according to claim 1,
Receiving each laser beam emitted along the surface of the substrate to be transported using the two foreign matter detectors and taking out two detection signals;
Proportionally calculating to amplify the two detection signals;
Calculating a difference for calculating a difference between the two amplified detection signals;
A foreign matter detection method comprising: determining whether or not foreign matter exists on the substrate from a detection waveform based on the difference. A substrate holding unit that holds the substrate, a mask holding unit that holds the mask so as to face the substrate, and an illumination optical system that irradiates light for pattern exposure toward the mask. A proximity exposure apparatus that exposes and transfers a mask pattern,
A plurality of heat medium flow paths that are provided in the substrate holding section and allow the heat medium to pass through;
A plurality of temperature sensors provided on the inlet side and the outlet side of the plurality of heat medium flow paths to detect the inlet temperature and the outlet temperature of the heat medium;
A flow rate adjusting mechanism that controls the flow rate of the heat medium that is provided in the plurality of heat medium channels and passes through the heat medium channel;
A plurality of heating devices provided on the inlet side of the plurality of heat medium flow paths to heat the heat medium;
One chiller that collectively cools the heat medium circulating from each outlet of the plurality of heat medium flow paths and sends it to each inlet of the plurality of heat medium flow paths;
A pressure accumulator for making the pressure of the heat medium provided at the discharge port of the chiller constant;
A magnification error calculator that calculates a magnification error when the pattern of the mask is exposed and transferred to the substrate based on the inspection result of the substrate on which the pattern is exposed and transferred;
A correction temperature calculation unit for calculating a correction temperature of the substrate holding unit for correcting the magnification error;
A proximity exposure apparatus comprising: a temperature control unit that controls the heating device and adjusts the temperature of the substrate holding unit to the correction temperature via the heat medium. The proximity exposure apparatus exposes and transfers the pattern of the mask to the substrate while relatively stepping the substrate holding unit and the mask holding unit,
The proximity exposure apparatus according to claim 3, wherein the plurality of heat medium flow paths are formed at each step position where the mask faces the substrate holding unit. The heat medium flow path is formed in a lattice shape communicating with each other in the substrate holding portion,
5. The proximity exposure apparatus according to claim 3, wherein the flow rate adjusting mechanism is disposed on an inlet side and an outlet side of the plurality of heat medium flow paths. A method of manufacturing a substrate comprising the proximity exposure apparatus according to claim 3,
Detecting an inlet temperature and an outlet temperature of each heat medium of the plurality of heat medium flow paths by the plurality of temperature sensors;
Calculating a magnification error when exposing and transferring the pattern of the mask to the substrate based on the inspection result of the substrate on which the pattern is exposed and transferred;
Calculating a correction temperature of the substrate holder based on the calculated magnification error;
The heating device heats the heat medium based on the temperature of the heat medium detected by the plurality of temperature sensors, and the flow rate adjusting mechanism controls the flow rate of the heat medium to control the temperature of the substrate holding unit. Adjusting the correction temperature to correct the magnification error;
A method for manufacturing a substrate, comprising:

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