JP2012116151A - Barrier film, and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a barrier film that ensures a desired moisture barrier performance without being affected by the surface roughness of a plastic film.SOLUTION: The barrier film includes: a base material 11 formed of a plastic film; a base layer 12 composed of an ultraviolet curable resin formed on the base material 11; and a barrier layer 13 composed of a Si-Cr-Zr-based oxide formed by a sputtering method on the base layer 12. The base layer 12 is formed to improve the surface flatness of the base material 11 so that the barrier layer 13 can improve the coatability of the surface of the base material. As a result, the film quality of the barrier layer 13 is improved to ensure a desired moisture barrier performance.

Description

  The present invention relates to a barrier film having a barrier property against water vapor and the like and a method for producing the same.

  A barrier film in which a metal oxide thin film such as aluminum oxide or silicon oxide is formed on the surface of a plastic film is known. This type of barrier film is widely used for packaging of articles that need to block oxygen or water vapor, and for packaging applications for preventing the deterioration of food, industrial products, pharmaceuticals, and the like. In recent years, in addition to packaging applications, the application of barrier films has become widespread in the field of electronics such as display elements such as organic EL and solar cells.

  In recent years, for example, barrier films for use in electronics are required to have not only water vapor barrier properties but also high transparency. For this reason, a plastic film is widely used as a support substrate for the barrier layer. For example, Patent Document 1 below describes a gas barrier film in which a thin film composed of two components of zirconium oxide and silicon oxide is formed on at least one surface of a plastic film. Patent Document 2 below describes a barrier film in which an oxide thin film composed of at least Si, Mg, and Zr is provided on at least one side of the film.

Japanese Patent No. 3252929 Japanese Patent No. 4435397

  However, a plastic film substrate has a surface roughness of a predetermined level or more depending on the type. For this reason, when forming a barrier layer by a sputtering method, it is difficult to follow the unevenness | corrugation of the base-material surface, and it is difficult to ensure desired water vapor | steam barrier property. In addition, since the sputtering method has a lower film formation rate than other film formation methods such as the CVD method, from the viewpoint of productivity, it is a reality to form the barrier layer with a thickness that can absorb the unevenness of the substrate surface. Not right.

  In view of the circumstances as described above, an object of the present invention is to provide a barrier film capable of ensuring desired water vapor barrier properties and a method for producing the same without being influenced by the surface roughness of the plastic film.

In order to achieve the above object, a barrier film according to an embodiment of the present invention includes a base material, a base layer, and a first barrier layer.
The base material is formed of a plastic film.
The foundation layer is formed on the substrate and is made of an ultraviolet curable resin.
The first barrier layer is formed on the underlayer by a sputtering method and is made of a Si—Cr—Zr-based oxide.

  In the barrier film, the base layer is formed for the purpose of improving the surface flatness of the substrate, and enhances the coverage of the substrate surface by the first barrier layer. Thereby, the film quality of the 1st barrier layer which consists of a Si-Cr-Zr type oxide formed into a film by the sputtering method on the surface of a foundation layer improves, and can secure desired water vapor barrier property.

  The surface roughness of the base layer is not particularly limited as long as it is smaller than the surface roughness of the base material. For example, the arithmetic average roughness (Ra) is 1 nm or less and the maximum height (Rz) is 10 nm or less. Thereby, the coverage with respect to the base-material surface of the 1st barrier layer formed into a film by a sputtering method can be improved.

The barrier film may further include an intermediate layer and a second barrier layer.
The intermediate layer is formed on the first barrier layer and is made of an adhesive material.
The second barrier layer is formed on the intermediate layer and is made of a Si—Cr—Zr-based oxide.

  By laminating the barrier layer via the intermediate layer as described above, the interface of the barrier layer is increased, thereby improving the water vapor barrier property. The number of barrier layers stacked is not limited to two, and may be three or more.

The barrier film may further include a third barrier layer. The third barrier layer is formed by an atomic layer deposition method on the first barrier layer and is made of an inorganic material having a water vapor barrier property.
Since the third barrier layer is formed by an atomic layer deposition method (also referred to as an ALD (Atomic Layer Deposition) method), a dense film with high coverage can be obtained. Thereby, water vapor | steam barrier property can be improved further.

  The barrier film can be applied to display devices that require water vapor barrier properties, portable electronic devices, semiconductor devices, electric / electronic devices such as batteries, or packaging materials such as food, precision equipment, cards, and artworks. It is.

The manufacturing method of the barrier film which concerns on one form of this invention includes the process of forming the base layer which consists of ultraviolet curable resin on a plastic film.
A first barrier layer made of Si—Cr—Zr-based oxide is formed on the underlayer by a sputtering method.

  In the method for producing a barrier film, the underlayer is formed for the purpose of improving the surface flatness of the substrate, and increases the coverage of the substrate surface by the first barrier layer. Thereby, the film quality of the 1st barrier layer which consists of a Si-Cr-Zr type oxide formed into a film by the sputtering method on the surface of a foundation layer improves, and a barrier film with high water vapor barrier property can be manufactured.

In the method for producing the barrier film, a second barrier layer made of a Si—Cr—Zr-based oxide may be further bonded to the first barrier layer via an adhesive.
Thereby, the interface of a barrier layer increases and, thereby, water vapor | steam barrier property can be improved. The number of barrier layers stacked is not limited to two, and may be three or more.

In the method for producing the barrier film, a third barrier layer made of an inorganic material having a water vapor barrier property may be further formed on the first barrier layer by an atomic layer deposition method.
Since the third barrier layer is formed by the ALD method, a dense film with high coverage can be obtained. Thereby, water vapor | steam barrier property can be improved further.

  According to the present invention, a desired water vapor barrier property can be secured without being affected by the surface roughness of the plastic film.

It is sectional drawing which shows typically the barrier film which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows typically the barrier film which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows the modification of the barrier film shown in FIG. It is sectional drawing which shows typically the barrier film which concerns on the 3rd Embodiment of this invention. It is process drawing explaining the formation method of the 3rd barrier layer of the barrier film shown in FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present embodiment, a barrier film applied to an organic EL display, a solar cell module and the like will be described as an example.

<First Embodiment>
[Barrier film]
FIG. 1 is a cross-sectional view schematically showing a barrier film according to an embodiment of the present invention. The barrier film 10 of this embodiment has a laminated structure of a base material 11, an underlayer 12, and a barrier layer 13.

(Base material)
The base material 11 can be formed of a flexible plastic film. As this type of plastic film, a light-transmitting plastic material is used. For example, polycarbonate (PC), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polystyrene (PS) ), Aramid, triacetyl cellulose (TAC), cycloolefin polymer (COP), polymethyl methacrylate (PMMA), and the like.

  The thickness of the base material 11 is not specifically limited, For example, they are 10 micrometers or more and 1000 micrometers or less. When the thickness is 10 μm or less, handling properties and reliability may be lowered. On the other hand, when the thickness exceeds 1000 μm, the light transmittance is significantly reduced. A preferable thickness of the substrate 11 is, for example, not less than 50 μm and not more than 200 μm. In particular, when the thickness is 200 μm or less, it becomes easy to apply a film-forming process by a roll-to-roll method.

(Underlayer)
The underlayer 12 is formed on the surface of the base material 11 and is formed for the purpose of increasing the smoothness of the surface of the base material 11. The underlayer 12 is formed of a light-transmitting ultraviolet curable resin, and thereby, desired transparency and surface flatness can be obtained. As the ultraviolet curable resin, for example, an acrylic ultraviolet curable resin is used.

  The surface roughness of the foundation layer 12 is not particularly limited as long as it is smaller than the surface roughness of the substrate 11. For example, the arithmetic average roughness (Ra) is 1 nm or less and the maximum height (Rz) is 10 nm or less. When Ra exceeds 1 nm and Rz exceeds 10 nm, the effect of improving the surface smoothness of the substrate 11 is small. By setting the surface roughness of the underlayer 12 to the above-described size, it is possible to improve the coverage of the first barrier layer formed by sputtering with respect to the substrate surface.

  The thickness of the underlayer 12 is not particularly limited, and a thickness that can improve the flatness of the surface of the base material 11 is sufficient. Depending on the surface roughness of the base material 11 used, the viscosity of the ultraviolet curable resin, etc. It can be set to 50 μm or less.

  The underlayer 12 is formed by irradiating an uncured ultraviolet curable resin applied to the surface of the substrate 11 with ultraviolet rays. The coating method of the ultraviolet curable resin is not particularly limited, and an appropriate coating technique such as a spin coating method, a roll coating method, or a bar coating method can be used.

(Barrier layer)
The barrier layer 13 is formed of an inorganic material having water vapor barrier properties and translucency. In the present embodiment, the barrier layer 13 is made of Si—Cr—Zr-based oxide (SiO ₂ —Cr ₂ O ₃ —ZrO ₂ ), and is formed on the surface of the underlayer 12 by sputtering. Since the base layer 12 is formed on the surface of the base material 11, even when the surface roughness of the base material 11 is relatively large, the barrier layer 13 has high coverage (coverability) on the base material 11. It is formed with.

  The thickness of the barrier layer 13 is not particularly limited, and is, for example, 5 nm or more and 100 nm or less. Considering film formation uniformity and productivity, the barrier layer 13 has a thickness of 10 nm to 50 nm, for example.

As a sputtering target for forming the barrier layer 13 by sputtering, a sintered body of Si—Cr—Zr-based oxide is typically used. In addition, the barrier layer 13 is formed by simultaneously sputtering each target of SiO ₂ , Cr ₂ O ₃ and ZrO ₂ , or simultaneously sputtering each target of Si, Cr and Zr in an oxygen atmosphere. May be.

  According to the present embodiment, since the base layer 12 that increases the surface smoothness is formed on the surface of the base material 11, the coverage of the base material surface by the barrier layer 13 formed by sputtering is increased, and the desired It is possible to ensure the water vapor barrier property. Moreover, since the sputtering method is employed as the film formation method of the barrier layer 13, for example, the equipment cost for production can be reduced as compared with the film formation method by the CVD method.

  Here, an experimental example performed by the present inventor will be described. An undercoat layer was formed on the surface of a plastic film substrate using different types of UV curable resins, and the surface roughness (arithmetic average roughness (Ra) and maximum height (Rz)) of the undercoat layer was measured. . Thereafter, a barrier layer made of a Si—Cr—Zr-based oxide was formed on the underlayer by a sputtering method, so that a sample of the barrier film shown in FIG. 1 was produced, and the water vapor transmission rate of each sample was measured. . The results are shown in Table 1.

For measurement of surface roughness, an atomic force microscope (AFM) (Digital Instruments Nanoscope IIIa) was used. The water vapor transmission rate (WVTR) was measured using an Illinois Instruments 7002 type measuring instrument, and the environmental conditions were 40 ° C. and 90% RH. For the formation of the barrier layer, a SiO ₂ —Cr ₂ O ₃ —Zr ₂ O ₃ based sintered body target having a diameter of 150 mm was used. The base pressure (film formation pressure) in the chamber was an argon atmosphere of 0.5 Pa, and the input power to the target was 500 W (13.56 MHz).

(Sample 1)
As a comparative example, a barrier layer having a thickness of 10 nm was directly formed on a substrate made of a polycarbonate (PC) film having a thickness of 400 μm. The surface roughness of the substrate was Ra = 0.50 nm and Rz = 10.66 nm. The water vapor transmission rate (WVTR) of Sample 1 was 5.98 [g / m ² / day].

(Sample 2)
On the PC substrate, an ultraviolet curable resin A (manufactured by Sony Chemical & Information Device) was applied by spin coating and then cured to form a 5 μm-thick underlayer. The surface roughness of the underlayer was Ra = 0.34 nm and Rz = 3.35 nm. Thereafter, a barrier layer having a thickness of 10 nm was formed on the base layer. The water vapor transmission rate (WVTR) of Sample 2 was less than 0.02 [g / m ² / day].

(Sample 3)
On the PC substrate, an ultraviolet curable resin B (manufactured by Sony Chemical & Information Co., Ltd.) was applied by a spin coat method and then cured to form a foundation layer having a thickness of 5 μm. The surface roughness of the underlayer was Ra = 0.37 nm and Rz = 3.84 nm. Thereafter, a barrier layer having a thickness of 10 nm was formed on the base layer. The water vapor transmission rate (WVTR) of Sample 3 was less than 0.02 [g / m ² / day].

(Sample 4)
On the PC substrate, an ultraviolet curable resin C (manufactured by ThreeBond Co., Ltd.) was applied by spin coating and then cured to form a 5 μm-thick underlayer. The surface roughness of the underlayer was Ra = 0.28 nm and Rz = 2.98 nm. Thereafter, a barrier layer having a thickness of 10 nm was formed on the base layer. The water vapor transmission rate (WVTR) of Sample 4 was less than 0.02 [g / m ² / day].

(Sample 5)
As a comparative example, a barrier layer having a thickness of 10 nm was directly formed on a substrate made of a polyethylene naphthalate (PEN) film having a thickness of 125 μm. The surface roughness of the substrate was Ra = 1.2 nm and Rz = 16.3 nm. The water vapor transmission rate (WVTR) of Sample 5 was 1.53 [g / m ² / day].

(Sample 6)
On the PEN substrate, an ultraviolet curable resin A (manufactured by Sony Chemical & Information Device) was applied by a bar coating method and then cured to form an underlayer having a thickness of 20 μm. The surface roughness of the underlayer was Ra = 0.4 nm and Rz = 4.1 nm. Thereafter, a barrier layer having a thickness of 10 nm was formed on the base layer. The water vapor transmission rate (WVTR) of Sample 6 was 0.013 [g / m ² / day].

(Sample 7)
On the PEN substrate, an ultraviolet curable resin D (manufactured by Sony Chemical & Information Device Co.) was applied by a bar coating method and then cured to form an underlayer having a thickness of 5 μm. The surface roughness of the underlayer was Ra = 0.7 nm and Rz = 7.2 nm. Thereafter, a barrier layer having a thickness of 10 nm was formed on the base layer. The water vapor transmission rate (WVTR) of Sample 7 was 0.007 [g / m ² / day].

From the results shown in Table 1, when the surface roughness of the lower ground of the barrier layer is 1 nm or less in Ra and 10 nm or less in Rz, regardless of the type of substrate, UV curable resin and the coating method, 0.02 [ It was confirmed that a water vapor transmission rate of less than [g / m ² / day] could be stably secured.

<Second Embodiment>
FIG. 2 is a cross-sectional view schematically showing a barrier film according to the second embodiment of the present invention. In the present embodiment, the description of the same parts as those of the first embodiment will be omitted or simplified, and different parts from the first embodiment will be mainly described.

  The barrier film 20 of the present embodiment has a laminated structure of the base material 11, the underlayer 12, the first barrier layer 13a, the intermediate layer 14, and the second barrier layer 13b.

Both the first barrier layer 13a and the second barrier layer 13b are made of Si—Cr—Zr-based oxide (SiO ₂ —Cr ₂ O ₃ —ZrO ₂ ) formed by sputtering. The thickness of the 1st barrier layer 13a and the 2nd barrier layer 13b is not specifically limited, For example, they are 5 nm or more and 100 nm or less. The thickness of the first barrier layer 13a and the thickness of the second barrier layer 13b may be the same or different.

  The intermediate layer 14 is composed of a transparent adhesive that joins between the first barrier layer 13a and the second barrier layer 13b. For example, an ultraviolet curable resin similar to the underlayer 12 is used as the intermediate layer 14. The thickness of the intermediate layer 14 is not particularly limited, and can be, for example, the same thickness as the underlayer 12. The surface roughness of the intermediate layer 14 that supports the second barrier layer 13 b may be defined to be the same as the surface roughness of the underlayer 12. Accordingly, the second barrier layer 13b can be formed on the intermediate layer 14 with high coverage.

  In the barrier film 20 of the present embodiment, the plurality of barrier layers 13a and 13b are laminated via the intermediate layer 14, thereby increasing the interface of the barrier layers, thereby improving the water vapor barrier property. The number of barrier layers stacked is not limited to two, and may be three or more. Thereby, the interface of the barrier layer can be further increased.

  FIG. 3 is a cross-sectional view schematically showing a barrier film according to a modification of the present embodiment. A barrier film 30 shown in FIG. 3 has a laminated body 31 of a first barrier layer 13 a, an intermediate layer 14, and a second barrier layer 13 b, and the laminated body 31 is laminated in two stages via an adhesive layer 15. ing. The adhesive layer 15 is formed of, for example, an ultraviolet curable resin similar to the intermediate layer 14. By increasing the interface of the barrier layer in this manner, the water vapor barrier property can be improved as compared with the case where the thickness of the barrier layer is simply increased. Thereby, the water vapor transmission rate of minus fourth power or less can be realized.

<Third Embodiment>
FIG. 4 is a cross-sectional view schematically showing a barrier film according to the third embodiment of the present invention. In the present embodiment, the description of the same parts as those of the first embodiment will be omitted or simplified, and different parts from the first embodiment will be mainly described.

The barrier film 40 of the present embodiment has a laminated structure of the base material 11, the base layer 12, the first barrier layer 13, and the third barrier layer 16. The first barrier layer 13 is made of a Si—Cr—Zr-based oxide (SiO ₂ —Cr ₂ O ₃ —ZrO ₂ ) formed on the base layer 12 by sputtering. The third barrier layer 16 is made of an inorganic material layer formed on the first barrier layer 13 by the ALD method.

  The third barrier layer 16 is formed of an inorganic material having water vapor barrier properties and translucency. Examples of this type of inorganic material include oxides and nitrides containing at least one metal element such as Al, Zn, Si, Cr, Zr, Cu, and Mg. The inorganic material constituting the third barrier layer 16 may be formed of the same material as the inorganic material constituting the first barrier layer 13, or may be formed of a different material. In the present embodiment, the third barrier layer 16 is formed of aluminum oxide (alumina).

  The third barrier layer 16 is formed on the surface of the first barrier layer 13 by ALD. The third barrier layer 16 exhibits higher water vapor barrier properties as its thickness increases. However, if the thickness is too large, there is a risk of warping or cracking due to internal stress. From such a viewpoint, the thickness of the third barrier layer 16 is, for example, not less than 10 nm and not more than 100 nm, preferably not less than 20 nm and not more than 60 nm.

  Here, a method of forming the third barrier layer 16 will be described. As described above, the third barrier layer 16 is formed by the ALD method. The ALD method is a thin film forming method in which a plurality of kinds of source gases (precursor gases) are alternately introduced into a chamber, and reaction products are deposited one atomic layer on the surface of a substrate installed in the chamber. In order to promote the reaction of the source gas, a method of forming plasma in the chamber (plasma ALD method), a method of heating the substrate (thermal ALD method), and the like are known, and any method can be applied.

When the third barrier layer 16 is formed of an aluminum oxide thin film, a first precursor gas and a second precursor gas are used. Examples of the first precursor gas include TMA (trimethylaluminum; (CH ₃ ) ₃ Al). Examples of the second precursor gas include water (H ₂ O).

In addition, for example, the following materials can be used as these precursor gases.
Bis (ter-butylimino) bis (dimethylamino) tungsten (VI); ((CH ₃ ) ₃ CN) ₂ W (N (CH ₃ ) ₂ ) ₂ , tris (ter-butoxy) silanol; ((CH ₃ ) ₃ CO) ₃ SiOH, diethyl zinc; (C ₂ H ₅ ) ₂ Zn, tris (diethylamide) (ter-butylimido) tantalum (V); (CH ₃ ) ₃ CNTa (N (C ₂ H ₅ ) ₂ ) ₃ , tris (Ter-pentoxy) silanol; (CH ₃ CH ₂ C (CH ₃ ) ₂ O) ₃ SiOH, trimethyl (methylcyclopentadienyl) platinum (IV); C ₅ H ₄ CH ₃ Pt (CH ₃ ) ₃ , bis (ethyl cyclopentadienyl) ruthenium _{(II); C 7 H 9} RuC 7 H 9, (3- aminopropyl) _{triethoxysilane; H 2 N (CH 2)} 3 Si (OC 2 H 5) 3, tetrachloride Silicon; SiC l ₄ , titanium tetrachloride; TiCl ₄ , titanium (IV) isopropoxide; Ti [(OCH) (CH ₃ ) ₂ ] ₄ , tetrakis (dimethylamido) titanium (IV); [(CH ₃ ) ₂ N] ₄ Ti, tetrakis (dimethylamide) zirconium _{(IV); [(CH 3} ) 2 N] 4 Zr, tris [N, N-bis (trimethylsilyl) amide] _{yttrium; [[(CH 3) 3} Si] 2] N) ₃ Y

  FIG. 5 is a process diagram for explaining a thin film formation method by ALD. Here, the formation method of the third barrier layer 16 will be described by taking batch processing as an example, but film formation processing by a roll-to-roll method can be applied.

  As shown in FIGS. 5A to 5D, the base film 18 is sequentially exposed to the first precursor gas 17A, the purge gas 17P, the second precursor gas 17B, and the purge gas 17P, so that a single aluminum oxide layer is obtained. A molecular layer 16C is formed. The base film 18 corresponds to the laminate of the base material 11, the base layer 12, and the first barrier layer 13 shown in FIG. 4.

  The base film 18 is carried into a chamber that is evacuated to a predetermined pressure. As shown in FIG. 5 (A), the first precursor gas 17A introduced into the chamber is adsorbed on the surface of the base film 18, whereby the first precursor layer 16A made of the precursor gas 17A is based. It is formed on the surface of the material film 18.

  Next, as shown in FIG. 5B, the purge gas 17P is introduced into the chamber. As a result, the surface of the base film 18 is exposed to the purge gas 17P, and the unbonded precursor gas 17A remaining on the surface of the base film 18 is removed. As the purge gas 17P, for example, argon (Ar) may be used when an aluminum oxide thin film is formed. In addition to this, for example, nitrogen, hydrogen, oxygen, carbon dioxide, or the like can be used as the purge gas.

  Subsequently, as shown in FIG. 5C, the second precursor gas 17B is introduced into the chamber. The second precursor gas 17B is adsorbed on the surface of the base film 18 to form a second precursor layer 16B made of the precursor gas 17B on the first precursor layer 16A. As a result, a monomolecular layer 16C of aluminum oxide is formed by a mutual chemical reaction between the first precursor layer 16A and the second precursor layer 16B. Thereafter, as shown in FIG. 5D, the purge gas 17P is again introduced into the chamber, and the unbonded precursor gas 17B remaining on the surface of the base film 18 is removed.

  By repeating the above process, the third barrier layer 16 having a predetermined thickness is formed on the surface of the base film 18.

Since the third barrier layer 16 is formed by the ALD method, a dense film with high coverage can be obtained. Thereby, water vapor | steam barrier property can be improved further. According to the experiments by the present inventors, when the thickness of the first barrier layer 13 is 20 nm and the thickness of the third barrier layer 16 is 20 nm, 3.5E-5 (3.5 × 10 ⁻⁵ ). It was confirmed that a water vapor transmission rate of [g / m ² / day] was obtained. The water vapor transmission rate was measured using a calcium corrosion observation apparatus “MFB-1000” manufactured by Mitsuwa Frontec Co., Ltd. under the measurement conditions of 40 ° C. and 90% RH (relative humidity).

  Moreover, the 3rd barrier layer 16 can obtain desired water vapor | steam barrier property by forming in the uppermost layer of a barrier film. In the barrier films 20 and 30 shown in FIGS. 2 and 3, the third barrier layer 16 may be formed as the uppermost layer. A protective layer for enhancing the durability of the barrier layer may be separately formed on the third barrier layer.

  The embodiment of the present invention has been described above, but the present invention is not limited to this, and various modifications can be made based on the technical idea of the present invention.

  For example, in the above embodiment, the barrier film applied to an organic EL display, a solar cell module, and the like has been described as an example. However, the application target is not limited to this, and any product member that requires water vapor barrier properties. As applicable. For example, the present invention can be applied to display devices, portable electronic devices, semiconductor devices, batteries, packaging members, and the like. Here, examples of the display device include a liquid crystal display, a plasma display, a touch panel, and electronic paper in addition to the organic EL display described above. Examples of the portable electronic device include a mobile phone, a portable music player, a data card, and the like, and those having a display function are also included. Examples of the semiconductor device include a TFT (Thin Film Transistor), an IC chip, an IC tag, a semiconductor memory, a semiconductor sensor, a MEMS (Micro Electro-Mechanical System) element, a photoelectric conversion element incorporated in a solar cell module, and the like. It is done. Examples of the battery include, in addition to the above-described solar cell module, a secondary battery such as a primary battery or a lithium ion battery, a fuel cell, a storage battery, and the like. The present invention can also be applied to other electric and electronic devices that require water vapor barrier properties. The present invention can also be applied to packaging members such as foods, precision instruments, cards, and artworks that require water vapor barrier properties.

DESCRIPTION OF SYMBOLS 10, 20, 30, 40 ... Barrier film 11 ... Base material 12 ... Underlayer 13 ... Barrier layer 13a ... 1st barrier layer 13b ... 2nd barrier layer 16 ... 3rd barrier layer

Claims (14)

A substrate formed of a plastic film;
An underlayer made of an ultraviolet curable resin, formed on the substrate;
A barrier film comprising: a first barrier layer made of a Si—Cr—Zr-based oxide formed by sputtering on the underlayer. The barrier film according to claim 1,
The underlayer has a surface roughness with an arithmetic average roughness (Ra) of 1 nm or less and a maximum height (Rz) of 10 nm or less. The barrier film according to claim 1,
An intermediate layer made of an adhesive material formed on the first barrier layer;
A barrier film further comprising: a second barrier layer formed on the intermediate layer and made of a Si—Cr—Zr-based oxide. The barrier film according to claim 1,
A barrier film further comprising a third barrier layer formed on the first barrier layer by an atomic layer deposition method and made of an inorganic material having a water vapor barrier property. The barrier film according to claim 4,
The said inorganic material is an aluminum oxide barrier film.   The display apparatus which has a barrier film of any one of Claims 1-5.   The portable electronic device which has a barrier film of any one of Claims 1-5.   The semiconductor device which has a barrier film of any one of Claims 1-5.   A battery comprising the barrier film according to claim 1.   The packaging member which has a barrier film of any one of Claims 1-5. Form a base layer made of UV curable resin on a plastic film,
A method for producing a barrier film, wherein a first barrier layer made of a Si—Cr—Zr-based oxide is formed on the underlayer by a sputtering method. The method for producing a barrier film according to claim 11, further comprising:
A method for producing a barrier film, wherein a second barrier layer made of a Si—Cr—Zr-based oxide is bonded onto the first barrier layer via an adhesive. The method for producing a barrier film according to claim 11, further comprising:
A method for producing a barrier film, wherein a third barrier layer made of an inorganic material having a water vapor barrier property is formed on the first barrier layer by an atomic layer deposition method. It is a manufacturing method of the barrier film according to claim 13,
The said inorganic material is an aluminum oxide. The manufacturing method of a barrier film.

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