JP2012099756A - Heating apparatus and vapor deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heating apparatus and a vapor deposition apparatus which can stabilize the atmosphere in a chamber.SOLUTION: A susceptor 3 having a holding surface RP of a processed article and being held rotatably on a susceptor guide 21 is provided in the hole HL of a chamber 5 surrounding the susceptor 3. A first ring 31 having an inner peripheral surface is attached to the chamber 5 to surround the hole HL, and a second ring 32 having an outer peripheral surface is attached to the susceptor guide 21. Since the inner peripheral surface of the first ring 31 and the outer peripheral surface of the second ring 32 face each other, a clearance having a width is formed. The clearance extends in a direction intersecting the holding surface RP of the susceptor 3 over a length longer than the width.

Description

  The present invention relates to a heating apparatus and a vapor phase growth apparatus, and more particularly to a heating apparatus and a vapor phase growth apparatus including a susceptor that holds a processing object.

  Semiconductor manufacturing apparatuses including a heating apparatus having a susceptor for holding a substrate are widely used. An example of such a semiconductor manufacturing apparatus is a vapor phase growth apparatus having a growth chamber and a reserve chamber. The growth chamber is a chamber in which vapor phase growth is performed on the substrate, and a gas for that purpose is flowed. The spare chamber is generally provided with a susceptor on which a substrate is placed, a susceptor rotation mechanism, and a heater, and a purge gas is allowed to flow therethrough. For example, according to Japanese Patent Application Laid-Open No. 2010-199382, a semiconductor manufacturing apparatus is installed on a reaction tube having an opening, a susceptor installed inside the opening, a heater for heating the susceptor, and an outer periphery of the susceptor. And a frame rotatable with the susceptor, and a susceptor support for supporting the frame.

JP 2010-199382 A

  In the semiconductor manufacturing apparatus described above, there is a difference in the degree of thermal expansion between the susceptor support (susceptor guide) that becomes high as the susceptor is heated and the reaction tube (chamber as a growth chamber) that is at a lower temperature. Arise. Therefore, if the susceptor guide and the chamber are constrained to each other, the apparatus may be distorted due to the generation of thermal stress. In order to prevent both from being restrained, a gap may be provided between the susceptor guide and the chamber.

  However, the gap may generate at least one of inflow of gas from the outside to the inside of the growth chamber and outflow of gas from the inside of the growth chamber to the outside. In that case, the atmosphere in the growth chamber may be disturbed. Specifically, the pressure in the growth chamber may be disturbed, or the impurity gas may be mixed into the atmosphere in the growth chamber. This impurity gas is, for example, a gas caused by a purge gas that flows into the spare chamber or moisture remaining in the spare chamber.

  The above-mentioned disturbance of the atmosphere can be a problem particularly when the semiconductor manufacturing apparatus is used for epitaxial film formation by vapor phase growth. Specifically, the in-plane distribution of the obtained thin film may deteriorate, or the concentration of impurities may increase. In particular, when an impurity gas caused by moisture flows into the growth chamber, oxygen atoms are taken in, which can adversely affect the physical properties of the thin film. Further, when the raw material gas used as the raw material of the thin film is corrosive like ammonia, the mechanism provided in the preliminary chamber may be corroded by the outflow of the raw material gas into the preliminary chamber.

  As described above, in the conventional technique, at least one of inflow of gas from the outside to the inside of the chamber and outflow of gas from the inside to the outside of the chamber is likely to occur through the gap between the susceptor guide and the chamber. It was. As a result, the atmosphere in the chamber may be disturbed. The present invention has been made in view of this problem, and an object of the present invention is to provide a heating apparatus and a vapor phase growth apparatus that can stabilize the atmosphere in the chamber.

  The heating device of the present invention includes a susceptor, a chamber, a heater, a susceptor guide, and first and second ring portions. The susceptor has a holding surface that holds an object to be processed. The chamber is provided with a hole that surrounds the susceptor at an interval. The heater heats the susceptor. The susceptor guide is disposed outside the chamber and holds the susceptor rotatably. The first ring portion is attached to the chamber so as to surround the hole portion, and has an inner peripheral surface. The second ring portion is attached to the susceptor guide and has an outer peripheral surface. A gap having a width is formed by the inner peripheral surface of the first ring portion and the outer peripheral surface of the second ring portion facing each other. The gap extends in a direction intersecting the holding surface of the susceptor over a length larger than the width.

  According to the present invention, a gap for preventing the susceptor guide and the chamber from being restrained is provided between the first and second ring portions. This can prevent the apparatus from being distorted due to the difference in thermal expansion between the susceptor guide and the chamber. In addition, the gap extends over a length larger than the width thereof, so that the flow path becomes long, thereby having a low conductance. This can suppress the inflow of gas from the outside to the inside of the chamber and the outflow of gas from the inside of the chamber to the outside through the gap. Therefore, the atmosphere in the chamber can be stabilized.

  The gap extends in a direction intersecting the holding surface of the susceptor. Thereby, compared with the case where a clearance gap extends in the direction parallel to a holding surface, the clearance gap which has sufficient length can be arrange | positioned in a smaller area | region in planar view. Therefore, the installation area of the heating device can be reduced.

  Preferably, the direction intersecting the holding surface of the susceptor is perpendicular to the holding surface. Thereby, compared with the case where the said direction is diagonal with respect to a holding surface, the clearance gap which has sufficient length can be arrange | positioned in a still smaller area | region in planar view. Therefore, the installation area of the heating device can be further reduced.

  Preferably, the thermal conductivity of the first ring part is larger than the thermal conductivity of the second ring part, and the thermal expansion coefficient of the second ring part is smaller than the thermal expansion coefficient of the first ring part.

  Outflow of heat from the first ring part to the outside is promoted by the large thermal conductivity of the first ring part. Therefore, since the temperature of the first ring portion can be suppressed, the thermal expansion of the first ring portion can be suppressed.

  In addition, the first ring portion whose temperature is suppressed in this way can efficiently absorb the heat radiated from the second ring portion having a higher temperature disposed in the vicinity thereof through a gap. it can. Thereby, the temperature rise of a 2nd ring part can be suppressed. Furthermore, since the thermal expansion coefficient of the second ring part is small, it is possible to suppress the thermal expansion of the second ring part corresponding to the product of the temperature increase of the second ring part and the thermal expansion coefficient. it can.

  As described above, since the thermal expansion of both the first and second ring portions can be suppressed, variation in the width of the gap defined by the first and second ring portions can be suppressed. Thereby, it is possible to prevent a large inflow / outflow of gas through the gap due to an excessively large gap. Further, since the width between the first and second ring portions can be prevented from being zero, that is, the gap can be prevented from being blocked, the effect of mitigating thermal stress due to the gap can be maintained.

  Preferably, the heating device further includes a drive unit that displaces the susceptor guide. Thereby, since the susceptor supported by the susceptor guide can be displaced, the processing object held by the susceptor can be conveyed in the heating device.

  More preferably, the second ring portion is detachably attached to the susceptor guide, and is configured to be detached from the susceptor guide and supported by the first ring portion when the susceptor guide is displaced. . Since the second ring portion and the susceptor guide are separately formed in this manner, the relative positions of the second ring portion and the susceptor guide can be changed, so that the generation of stress due to the difference in thermal expansion between the two can be avoided. . Thereby, distortion of the second ring portion and the susceptor guide can be suppressed.

  More preferably, the second ring portion is configured to be aligned with the first ring portion by being supported by the first ring portion. Thereby, even when the first and second ring portions move relative to each other along with the displacement of the susceptor guide, the variation in the width of the gap formed between the first and second ring portions can be suppressed. .

  Preferably, the width of the gap is 0.1 mm or more and 0.5 mm or less. When the width of the gap is 0.1 mm or more, it is possible to more reliably prevent the gap from being closed due to the influence of thermal expansion. Moreover, when the width is 0.5 mm or less, the inflow and outflow of gas inside and outside the chamber can be more reliably suppressed.

  Preferably, the length of the gap is 20 mm or more. When the length of the gap is 20 mm or more, the inflow and outflow of gas inside and outside the chamber can be more reliably suppressed.

  The vapor phase growth apparatus of the present invention includes the heating device described above and a gas introduction unit. The gas introduction unit introduces a source gas into the chamber. Thereby, a vapor phase growth apparatus capable of performing film formation under a stable atmosphere is obtained.

  According to the present invention, as described above, the atmosphere in the chamber can be stabilized.

It is sectional drawing which shows schematically the structure of the vapor phase growth apparatus in Embodiment 1 of this invention. FIG. 2 is a partially enlarged view of FIG. 1. FIG. 3 is a partially enlarged view showing a state in which a susceptor included in the apparatus of FIG. 1 is displaced in the same field of view as FIG. 2. It is sectional drawing which shows roughly the vapor phase growth process using the apparatus of FIG. It is a partial cross section figure which shows schematically the structure of the vapor phase growth apparatus in Embodiment 2 of this invention. It is a graph which shows the example of the relationship between the differential pressure | voltage of a growth chamber and a reserve chamber, and the gas outflow amount from a clearance gap.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
Referring to FIGS. 1 and 2, a vapor phase growth apparatus 100 (heating apparatus) according to the present embodiment includes a susceptor 3, a growth chamber 5 (chamber), a heater 7, a gas introduction unit 9, and gas discharge. Part 11, rotating shaft 17, joint 19, motor 20, susceptor guide 21, mount 22, ring part 31 (first ring part), ring part 32 (second ring part), A spare chamber 35 and a drive unit 40 are provided.

  The growth chamber 5 is provided with a hole HL that surrounds the susceptor 3 with a space therebetween. In addition, a gas introduction unit 9 and a gas discharge unit 11 are connected to the growth chamber 5. The gas introduction part 9 is a part for introducing a source gas having a desired flow rate into the growth chamber 5. The gas discharge part 11 is a part for discharging used gas from the growth chamber 5. The preliminary chamber 35 is provided adjacent to the growth chamber 5 (adjacent to the lower side of the growth chamber 5 in FIG. 1).

  The susceptor 3 has a holding surface RP that holds a processing object such as a substrate. This holding is performed, for example, by placing the processing object on the holding surface RP. In the present embodiment, a susceptor holder 23 having an annular shape in plan view is fixed to the outer periphery of the susceptor 3 having a circular shape in plan view. A heater 7 is provided to heat the susceptor 3 for the purpose of controlling the temperature of the symmetrical object. The susceptor 3 is arranged to receive a rotational force (arrow AR). For this purpose, the susceptor 3 is connected to the motor 20 via the rotating shaft 17 and the joint 19, for example.

  The susceptor guide 21 is disposed in the preliminary chamber 35, that is, outside the growth chamber 5. In the present embodiment, the outer periphery of the susceptor 3 to which the susceptor holder 23 is fixed is rotatably held by a susceptor guide 21 having an annular shape in plan view. That is, the susceptor guide 21 holds the susceptor 3 rotatably. Specifically, the susceptor guide 21 and the susceptor holder 23 constitute a bearing. In order to allow the susceptor holder 23 to rotate without resistance with respect to the susceptor guide 21, a rolling element 29 may be provided between the two.

  Since the susceptor guide 21 is attached to the susceptor 3 heated to a high temperature, the susceptor guide 21 is made of a material suitable for use at a high temperature. An example of such a material is BN (boron nitride).

  The ring portion 31 is attached to the growth chamber 5 so as to surround the hole portion HL, and has an annular shape that forms an inner peripheral surface S1 (FIG. 2). The ring portion 32 is attached to the susceptor guide 21 and has an annular shape that forms the outer peripheral surface S2 (FIG. 2). A gap GP having a width DW (FIG. 2) is formed by the inner peripheral surface of the ring portion 31 and the outer peripheral surface of the second ring portion facing each other. The gap GP extends in a direction (vertical direction in the drawing) intersecting the holding surface RP of the susceptor 3 over a length DL (FIG. 2) larger than the width DW.

  1 and 2, the entire gap GP has a uniform width, but the width of the gap does not necessarily have to be uniform. When the width of the gap is not uniform, the width of the gap may be calculated as an average value. Preferably, the width DW of the gap GP is not less than 0.1 mm and not more than 0.5 mm. Preferably, the length DL of the gap GP is 20 mm or more. More preferably, a suitable condition for the width DW and a suitable condition for the length DL are simultaneously satisfied.

  Preferably, the thermal conductivity of the ring part 31 is larger than the thermal conductivity of the ring part 32, and the thermal expansion coefficient of the ring part 32 is smaller than the thermal expansion coefficient of the ring part 31. For example, the ring portion 31 is made of Ni (nickel), and the ring portion 32 is made of quartz. Ring portion 31 may be made of Mo (molybdenum), SiC (silicon carbide), or C (carbon). The ring portion 31 may be made of Inconel (trademark).

  Preferably, ring portion 31 has a protruding portion PL protruding inward (left side in FIG. 2). The projecting portion PL is disposed away from the ring portion 32, and is disposed so as to sandwich the ring portion 32 with the growth chamber 5 along the direction of the length DL.

  Preferably, the ring portion 32 has a hook-like shape and is attached to the ring portion 31 by being hooked on the shoulder portion of the susceptor guide 21 (upper right corner portion in FIG. 2). Thereby, the ring part 32 can slide on the susceptor guide 21 at the time of thermal expansion and contraction. Preferably, a clearance having a width DX (FIG. 2) is provided between the ring portion 32 and the susceptor guide 21 in a direction parallel to the holding surface RP.

  Preferably, ring portion 32 is configured to be easily cooled, and may be water-cooled, for example.

  The gas introduction unit 9 introduces a source gas into the growth chamber 5. The gas introduction unit 9 may have a mass flow for controlling the flow rate of the introduced gas.

  The gas discharge unit 11 discharges used gas from the growth chamber 5. The gas discharge part 11 may have a valve for adjusting the flow rate of the discharged gas.

  The drive unit 40 includes a portion that is driven in a direction (arrow AL) intersecting the holding surface RP, and is configured such that the susceptor guide 21 is displaced by driving this portion. For example, the drive unit 40 has a movable cylinder 41. The movable cylinder 41 displaces the susceptor guide 21 via the gantry 22.

Next, a method for using the vapor phase growth apparatus 100 will be described.
Referring to FIGS. 1 and 2, drive unit 40 is driven as indicated by arrow AL.

  Referring to FIG. 3, the susceptor 3 is displaced from the position surrounded by the hole HL of the growth chamber 5 (FIG. 2) to a position suitable for carrying in the processing object by the above driving. In the middle of this displacement, the ring portion 32 is placed on the protruding portion PL of the ring portion 31, and as a result, the ring portion 32 is removed from the susceptor guide 21.

  Further, referring to FIG. 4, after substrate SB as a processing object is placed on susceptor 3, drive unit 40 is driven in the reverse direction. Thereby, the susceptor 3 on which the substrate SB is placed is displaced to a position surrounded by the hole HL of the growth chamber 5. In the middle of this displacement, the ring portion 32 is attached to the susceptor guide 21 again.

  Next, the susceptor 3 is rotated by the motor 20. Further, the temperature of the substrate SB is controlled using the heater 7.

  Next, the source gas is introduced from the gas introduction unit 9 into the growth chamber 5, and unnecessary gas in the growth chamber 5 is discharged from the gas discharge unit 11. As a result, the thin film FM is formed on the substrate SB using the source gas as a source. A purge gas may be flowed into the preliminary chamber 35 during film formation. In order to suppress the inflow and outflow of gas through the gap GP, it is preferable to reduce the differential pressure between the growth chamber 5 and the preliminary chamber 35. This differential pressure is preferably 2 Pa or less. When a GaN thin film is formed as the thin film FM, the source gas is, for example, a mixed gas containing ammonia, nitrogen, hydrogen, and an organic metal. As the purge gas, for example, nitrogen or nitrogen mixed with hydrogen can be used.

  After the formation of the thin film FM, the gas introduction unit 9 stops the introduction of the source gas. Next, the susceptor 3 is displaced again by the drive unit 40. Next, the substrate SB is unloaded from the vapor phase growth apparatus 100. Thereby, the substrate SB on which the thin film FM is formed is obtained.

  According to the present embodiment, the gap GP is provided between the ring portions 31 and 32 so that the space between the susceptor guide 21 and the growth chamber 5 is not restricted. Thereby, it is possible to prevent the apparatus 100 from being distorted due to a difference in thermal expansion between the susceptor guide 21 and the growth chamber 5. The gap GP has a long flow path by extending over a length DL larger than the width DW, and thus has a low conductance. Thereby, the inflow of gas from the outside to the inside of the growth chamber 5 and the outflow of gas from the inside to the outside of the growth chamber 5 through the gap GP can be suppressed. Therefore, the atmosphere in the growth chamber 5 can be stabilized. As a result, film formation can be performed in a more accurately controlled atmosphere.

  The gap GP extends in a direction intersecting with the holding surface RP. Accordingly, the gap GP having a sufficient length DL can be arranged in a smaller region in plan view than when the gap GP extends in a direction parallel to the holding surface RP. Therefore, the installation area of the apparatus 100 can be reduced.

  Preferably, the direction intersecting the holding surface RP of the susceptor 3 is perpendicular to the holding surface RP. Thereby, compared with the case where the said direction is diagonal with respect to the holding surface RP, the clearance gap GP which has sufficient length DL can be arrange | positioned in a still smaller area | region in planar view. Therefore, the installation area of the apparatus 100 can be further reduced.

  Further, as described above, the gap GP can be provided in a small region in plan view, and therefore it is easy to provide the gap GP by modifying an existing device. If the area required to provide the gap GP is large, it is necessary to increase the basic dimensions of the device, and thus a large modification may be required.

  Preferably, the thermal conductivity of the ring part 31 is larger than the thermal conductivity of the ring part 32, and the thermal expansion coefficient of the ring part 32 is smaller than the thermal expansion coefficient of the ring part 31.

  Outflow of heat from the ring part 31 to the outside is promoted by the large thermal conductivity of the ring part 31. Therefore, since the temperature of the ring part 31 can be suppressed, the thermal expansion of the ring part 31 can be suppressed.

  In addition, the ring part 31 whose temperature is thus suppressed can efficiently absorb heat radiated from the ring part 32 having a higher temperature disposed in the vicinity thereof via the gap GP. Thereby, the temperature rise of the ring part 32 can be suppressed. Furthermore, since the thermal expansion coefficient of the ring part 32 is small, it is possible to suppress the thermal expansion of the ring part 32 that occurs corresponding to the product of the temperature rise of the ring part 32 and the thermal expansion coefficient.

  Thus, since the thermal expansion of both the ring parts 31 and 32 can be suppressed, the fluctuation | variation of the width | variety DW of the clearance gap GP prescribed | regulated by the ring parts 31 and 32 can be suppressed. Thereby, it is possible to prevent a large inflow / outflow of gas through the gap GP due to an excessively large width DW of the gap GP. Further, since the width DW between the ring portions 31 and 32 can be prevented from being zero, that is, the gap GP can be prevented from being blocked, the thermal stress relaxation effect by the gap GP can be maintained.

  Preferably, the apparatus 100 further includes a drive unit 40 that displaces the susceptor guide 21. As a result, the susceptor 3 supported by the susceptor guide 21 can be displaced, so that the substrate SB held by the susceptor 3 can be transported in the apparatus 100.

  More preferably, the ring portion 32 is detachably attached to the susceptor guide 21 and is configured to be detached from the susceptor guide 21 and supported by the ring portion 31 when the susceptor guide 21 is displaced. Since the ring portion 32 and the susceptor guide 21 are separately formed in this manner, the relative positions of the ring portion 32 and the susceptor guide 21 can be changed, so that it is possible to avoid the generation of stress due to the difference in thermal expansion between the two. Thereby, distortion of the ring part 32 and the susceptor guide 21 can be suppressed.

  Preferably, the width DW of the gap GP is not less than 0.1 mm and not more than 0.5 mm. When the width DW of the gap GP is 0.1 mm or more, it is possible to more reliably prevent the gap GP from being blocked by the influence of thermal expansion. In addition, when the width DW is 0.5 mm or less, gas inflow and outflow inside and outside the growth chamber 5 can be more reliably suppressed. Preferably, the length DL of the gap GP is 20 mm or more. When the length DL of the gap GP is 20 mm or more, gas inflow and outflow inside and outside the growth chamber 5 can be more reliably suppressed. More preferably, the width DW is not less than 0.1 mm and not more than 0.5 mm, and the length DL is not less than 20 mm. Thereby, the inflow and outflow of the gas inside and outside the growth chamber 5 can be suppressed more reliably.

  Preferably, a clearance having a width DX (FIG. 2) is provided between the ring portion 32 and the susceptor guide 21 in a direction parallel to the holding surface RP. Thereby, generation | occurrence | production of the distortion by the thermal expansion of the susceptor guide 21 to an outer peripheral direction (right direction of FIG. 2) and pressing on the ring part 32 can be prevented.

(Embodiment 2)
Referring mainly to FIG. 5, in the vapor phase growth apparatus of the present embodiment, ring portion 31V (first ring portion) having protruding portion PT instead of ring portions 31 and 32 (FIG. 2). And a ring portion 32V (second ring portion). The surface of the projecting portion PT on which the ring portion 32V is placed has a taper that is inclined so that the inner side (left side in FIG. 5) becomes lower in height. Further, a taper combined with this taper is provided on the surface of the ring portion 32V that is placed on the ring portion 31V.

  Since the configuration other than the above is substantially the same as the configuration of the first embodiment described above, the same or corresponding elements are denoted by the same reference numerals, and description thereof is not repeated.

  According to the present embodiment, when the ring portion 32V is supported by the ring portion 31V, the ring portion 32V is aligned with the ring portion 31V by its own weight as indicated by an arrow AA in the drawing. Specifically, the center axes of the ring portions 31V and 32V are matched. That is, the ring portions 31V and 32V are centered with respect to each other. Thereby, even when the ring portions 31V and 32V move relative to each other along with the displacement of the susceptor guide 21, the variation in the width DW of the gap GP formed between the ring portions 31V and 32V can be suppressed.

  Referring to FIG. 6, the growth chamber 5 when the length DL of the gap GP (FIG. 2) having a width DW = 0.5 mm is 20 mm (plot G1) and 40 mm (plot G2). The relationship between the pressure difference between the gas and the preliminary chamber 35 and the amount of gas outflow from the gap GP was examined. On the vertical axis of the graph, a positive gas outflow amount corresponds to a gas outflow from the growth chamber 5 to the preliminary chamber 35, and a negative gas outflow amount corresponds to a gas inflow from the preliminary chamber 35 to the growth chamber 5. . As a result of this study, it was found that the absolute value of the outflow amount was inversely proportional to the length DL when the width DW = 0.5 mm. That is, it has been found that the absolute value of the outflow amount can be reduced by increasing the length DL. When the width DW is excessively large, it is considered that the absolute value of the outflow amount does not decrease so much even if the length DL is increased.

Next, as an example of the present invention, a GaN thin film FM was epitaxially grown using a gap GP having a width DW = 0.5 mm and a length DL = 20 mm. During epitaxial growth (FIG. 4), the pressure was controlled so that the differential pressure between the pressure in the growth chamber 5 and the pressure in the auxiliary chamber 35 was 2 Pa or less. The obtained thin film FM had an in-plane uniformity of 3% and an oxygen concentration of 1.5 × 10 ¹⁷ cm ⁻³ . Next, as a comparative example, a thin film was formed without the ring portion 32. The resulting thin film had an in-plane uniformity of 14% and an oxygen concentration of 2.0 × 10 ¹⁸ cm ⁻³ . From this result, it was found that according to the example, a thin film having high in-plane uniformity and low oxygen concentration (impurity concentration) can be obtained.

  In the embodiment disclosed this time, a vapor phase growth apparatus having a growth chamber is used. However, the present invention is not limited to this, and any apparatus including a heating apparatus having a chamber may be used. Can do. Also, the second ring need not necessarily be removable from the susceptor guide. Further, the susceptor guide is not necessarily configured to be displaceable.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  3 susceptor, 5 growth chamber (chamber), 7 heater, 9 gas introduction part, 11 gas discharge part, 17 rotating shaft, 19 joint, 20 motor, 21 susceptor guide, 22 mount, 23 susceptor holder, 29 rolling element, 31 31V ring part (first ring part), 32, 32V ring part, 35 spare chamber, 40 drive part, 41 movable cylinder, 100 vapor phase growth apparatus (heating apparatus), FM thin film, GP gap, HL hole part, PL PT projecting portion, RP holding surface, S1 inner peripheral surface, S2 outer peripheral surface, SB substrate.

Claims (9)

A susceptor having a holding surface for holding a processing object;
A chamber provided with a hole surrounding the susceptor at an interval;
A heater for heating the susceptor;
A susceptor guide disposed outside the chamber and rotatably holding the susceptor;
A first ring portion attached to the chamber so as to surround the hole portion and having an inner peripheral surface;
A second ring portion attached to the susceptor guide and having an outer peripheral surface;
The inner peripheral surface of the first ring portion and the outer peripheral surface of the second ring portion are opposed to each other to form a gap having a width, and the gap is longer than the width. A heating device extending in a direction intersecting the holding surface of the susceptor.   The heating apparatus according to claim 1, wherein the direction intersecting the holding surface of the susceptor is perpendicular to the holding surface.   The thermal conductivity of the first ring part is larger than the thermal conductivity of the second ring part, and the thermal expansion coefficient of the second ring part is smaller than the thermal expansion coefficient of the first ring part, The heating device according to claim 1 or 2.   The heating apparatus according to any one of claims 1 to 3, further comprising a drive unit that displaces the susceptor guide.   The second ring portion is detachably attached to the susceptor guide, and is configured to be detached from the susceptor guide and supported by the first ring portion when the susceptor guide is displaced. The heating device according to claim 4.   The heating device according to claim 5, wherein the second ring part is configured to be aligned with the first ring part by being supported by the first ring part.   The heating device according to any one of claims 1 to 6, wherein the width of the gap is 0.1 mm or more and 0.5 mm or less.   The heating apparatus according to claim 1, wherein the length of the gap is 20 mm or more. The heating device according to claim 1,
A vapor phase growth apparatus comprising: a gas introduction unit that introduces a source gas into the chamber.

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