JP2012047763A - Field effect transistor type biosensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a biosensor which detects electric characteristics of a bio-related substance contained in fluid to be tested such as aqueous solution arranged in a sensitive film and observes the bio-related substance contained in the fluid to be tested by observation equipment such as a microscope and with high magnification.SOLUTION: The biosensor comprises: a base material 10; a transparent semiconductor film 20 laminated on the base material 10; a source electrode 30a and a drain electrode 30b formed at both ends of the transparent semiconductor film 20; an insulator film 40 which is laminated so as to cover the transparent semiconductor film 20, the source electrode 30a and the drain electrode 30b; and a sensitive film 50 which is laminated on the insulator film 40, in which the semiconductor film is formed of amorphous oxide which consists primarily of InMZnO (M is at least a kind of Ga, Al, Fe), oxide which consists primarily of ZnO, indium tin oxide, indium zinc oxide, or magnesium oxide.

Description

  The present invention relates to a biosensor using a semiconductor field effect transistor.

  In recent years, various methods have been developed for testing biologically relevant substances such as DNA, sugar chains, and proteins for the purpose of disease diagnosis, detection of individual differences in drug metabolism, or food or environmental monitoring. In particular, research on biosensors that detect biomolecules using electrical signals is in progress. Recently, a field effect transistor (hereinafter also referred to as “FET”) is used from the viewpoint that electrical signal conversion is fast and the connection between an integrated circuit and a MEMS (Micro Electro Mechanical System) is easy. Much research has been done on biosensors that are used to detect biological responses.

  Conventionally, a biosensor using an FET has a structure in which a gate electrode is removed from a MOSFET and an ion-sensitive film is deposited on an insulating film, which is called “ISFET (Ion Sensitive FET)”. . And it arrange | positions an oxidoreductase, various proteins, DNA, an antigen, or an antibody etc. to an ion sensitive film | membrane, and functions as various biosensors (for example, patent document 1).

Specifically, an FET used for a biosensor has a source electrode, a drain electrode, and a gate insulating film formed on the surface of a silicon substrate, and a metal electrode on the surface of the gate insulator between the source electrode and the drain electrode. . A DNA probe and alkanethiol are disposed on the surface of the metal electrode. In actual measurement, a metal electrode, a DNA probe and alkanethiol arranged on the surface of the metal electrode, and a reference electrode 58 are arranged in the reaction solution in the measurement cell. When a high-frequency voltage is applied through the reference electrode, the electrical characteristics of the insulated gate field-effect transistor change before and after the binding between the target DNA and the DNA probe contained in the reaction solution, that is, between the source and the drain. By detecting the change in the value of the current flowing between them, it is possible to detect the presence or absence of extension of the target DNA contained in the reaction solution.

JP 2007-108160 A

Normally, when detecting the state of a biological substance such as a cell or DNA with an electrical signal, the electrical signal characteristic in that state is an important factor while observing the state of the cell or DNA with a microscope. . On the other hand, it is generally desirable to observe cells at a high magnification with transmitted light.
However, the biosensor described in Patent Document 1 observes a biologically-related substance contained in a fluid to be inspected arranged at an ion-sensitive membrane with a non-transparent base substrate and source or drain electrodes at a high magnification. I can't.

  In addition, in order to observe the biological substance at a high magnification, it is necessary to bring the arranged biological substance and an observation surface such as an objective lens of a microscope close to each other. On the other hand, when observing the biological substance disposed on the ion-sensitive membrane from above (opposite the substrate side), the fluid to be inspected itself containing the biological substance, such as an aqueous solution, a culture solution, or other chemicals Becomes an obstructive factor for observing, and it is difficult to observe a biological material film arranged at a high magnification by bringing an observation surface such as an objective lens of a microscope close to the ion-sensitive film. In addition, since the base substrate and the electrode are formed of an opaque material, the sample placed on the ion sensitive film cannot be observed from the base substrate side.

  The present invention has been made to solve the above-mentioned problems, and its purpose is to detect an electrical characteristic of a biological substance contained in a fluid to be inspected arranged on a sensitive film, and to use a microscope or the like. Another object of the present invention is to provide a biosensor capable of observing a biological substance disposed at a high magnification.

(1) In order to solve the above-mentioned problem, the field effect transistor type biosensor of the present invention is formed on a transparent base material, a transparent semiconductor film laminated on the transparent base material, and both ends of the semiconductor film. A source electrode and a drain electrode; and a sensitive film that is laminated on the semiconductor film with an insulating film interposed therebetween and on which an organism-related substance contained in the fluid to be inspected is disposed, and the semiconductor film includes InMZnO ( M is Ga, Al, an amorphous oxide containing as a main component at least one) of Fe, oxide composed mainly of ZnO, indium tin oxide, indium zinc oxide, or a structure that is formed of magnesium oxide Have.

  According to the present invention, light is irradiated from the upper part of the fluid to be inspected (on the side opposite to the base material side), and the biological material disposed on the sensitive film is observed from the base material side with a microscope or other optical observation equipment. Therefore, compared with the case of observing a biological substance disposed on the sensitive membrane from the upper part of the fluid to be inspected, the biological substance can be observed with high magnification and accurately. It is possible to achieve both detection of electrical characteristics of a substance and observation at a high magnification of the biological substance.

  (2) In the field effect transistor biosensor of the present invention, the first region having hydrophilicity formed on at least the channel of the semiconductor film on the sensitive film on which the biological substance is disposed. And a second region having hydrophobicity formed adjacent to the horizontal direction perpendicular to the stacking direction in the first region.

  According to the present invention, the partition wall and other members for retaining the fluid to be inspected in the sensitive film can be eliminated, so that the fluid to be inspected can be retained on the sensitive film without providing the partition wall. The manufacturing process of the biosensor can be simplified.

  (3) Moreover, the field effect transistor type biosensor of the present invention has a cell adhesive property formed on at least the channel of the semiconductor film on the upper surface of the sensitive film on which the biological substance is disposed. The first region and the cell adhesion inhibitory property formed by a hydrophilic film containing an organic compound having a carbon-oxygen bond and formed adjacent to the horizontal direction perpendicular to the stacking direction in the first region And a second region having a configuration.

  Usually, the cells are concentrated on the bottom of the fluid to be inspected such as a sensitive membrane due to gravity. According to the present invention, a living body-related substance existing in a region other than the cell-adhesive region is detected when electrical characteristics are detected by concentrating the body-related substance in the cell-adhesive region and not having the living-related material in the cell adhesion-inhibiting region. Since the influence of the substance can be eliminated, the electrical characteristics of the biological substance adhered to the cell adhesive region can be accurately detected.

  (4) The field effect transistor biosensor of the present invention is provided adjacent to the sensitive film while being insulated from the source electrode and the drain electrode, and is a reference for applying a variable voltage to the fluid to be inspected. An electrode is further provided, and the reference electrode is a transparent electrode.

  According to the present invention, the fluid to be inspected is retained on the sensitive membrane without inserting the reference electrode into the fluid to be inspected after the fluid to be inspected is retained on the sensitive membrane. Since the reference voltage can be applied to the fluid to be inspected by the reference electrode, the inspection process can be simplified.

  (5) Moreover, the field effect transistor type biosensor of the present invention has a configuration in which the transparent semiconductor film is formed of a transparent oxide semiconductor.

  According to the present invention, since the transparent semiconductor film is formed of a transparent oxide semiconductor, the biological material contained in the fluid to be inspected is observed at a high magnification by an observation device such as a microscope and at a high magnification. be able to.

  (6) In the field effect transistor biosensor of the present invention, the source electrode and the drain electrode are formed of a transparent electrode.

  According to the present invention, since the source electrode and the drain electrode are formed of a transparent electrode such as ITO or IZO, for example, the biological material contained in the fluid to be inspected by an observation device such as a microscope and at a high magnification Can be observed at a high magnification.

  (7) Moreover, the field effect transistor type biosensor of the present invention has a configuration in which the substrate is formed of any one of glass, PEN, and PET.

  According to the present invention, since the base material is formed of any one of glass, PEN, and PET, a biological substance contained in the fluid to be inspected is observed at a high magnification by an observation device such as a microscope and at a high magnification. can do.

  (8) The field effect transistor biosensor of the present invention further includes a partition for retaining the fluid to be inspected in the arrangement area around the arrangement area where the biological substance is arranged in at least the sensitive film. have.

  According to the present invention, since the fluid to be inspected can be retained on the arrangement region where the biologically relevant substance in the sensitive film is arranged by the partition wall, the electrical characteristics of the biologically relevant substance can be accurately detected.

  The biosensor according to the present invention irradiates light from the upper part of the fluid to be inspected (on the side opposite to the base material side) to dispose the biological substance disposed on the sensitive film by using a microscope or other optical observation device from the base material side. Compared with the case of observing the biological substance disposed on the sensitive membrane from the upper part of the fluid to be inspected, the biological substance can be observed at a higher magnification than the biological substance. It is possible to achieve both the detection of the electrical characteristics and the high-magnification observation of the biological material.

1 is a cross-sectional view of a first embodiment of an ISFET biosensor according to the present invention. It is a figure for demonstrating the operation principle of the ISFET biosensor in 1st Embodiment. It is sectional drawing of 2nd Embodiment of the ISFET biosensor which concerns on this invention. It is a figure for demonstrating the operation principle of the ISFET biosensor in 2nd Embodiment. It is sectional drawing of 3rd Embodiment of the ISFET biosensor which concerns on this invention. It is sectional drawing of 4th Embodiment of the ISFET biosensor which concerns on this invention. It is sectional drawing of 5th Embodiment of the ISFET biosensor which concerns on this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the embodiment described below, the sample contained in the fluid to be inspected arranged on the sensitive film from the substrate side, that is, a biological substance (hereinafter referred to as “sample”) such as a cell, DNA, sugar chain, or protein. Is an embodiment in which the field-effect transistor biosensor of the present invention is applied to an ISFET biosensor having a structure that can be visualized by a microscope from the substrate side. 1 to 6 has a pseudo top gate bottom contact configuration, and the ISFET used in the ISFET biosensor of FIG. 7 has a pseudo top gate top contact configuration.

[First Embodiment]
First, a first embodiment of the ISFET biosensor according to the present invention will be described with reference to FIGS. 1 and 2.

(Configuration of ISFET biosensor)
Next, the configuration of the ISFET biosensor of this embodiment will be described with reference to FIG. FIG. 1 is a cross-sectional view of the ISFET biosensor of this embodiment.

  As shown in FIG. 1, the ISFET biosensor of the present embodiment includes a base material 10, a transparent semiconductor film 20 laminated on the base material 10, and a source electrode 30 a and a drain formed at both ends of the transparent semiconductor film 20. An electrode 30b, an insulating film 40 (also referred to as a “gate insulating film”) that is stacked so as to cover the transparent semiconductor film 20, the source electrode 30a, and the drain electrode 30b, and a sensitive film 50 that is stacked on the insulating film 40. And a partition wall 60 that is formed at both ends of the sensitive film 50 and retains a fluid 100 to be inspected such as an aqueous solution or a culture solution containing the sample on the sensitive film 50.

  The base material 10 is made of a material that is transparent and can be laminated with the transparent semiconductor film 20, the source electrode 30a, and the drain electrode 30b so that the sensitive film 50 can be observed from below the base material 10. There is no particular limitation as long as it is made. This transparent is only required to be transparent to the extent that the biological material 200 disposed on the sensitive film 50 from the substrate 10 can be observed using an observation device such as a microscope, and does not include a translucent material. . Specifically, inorganic materials such as glass, plastics such as PEN or PET (polyester resin, polyethylene resin, polypropylene resin, ABS resin, nylon, acrylic resin, fluororesin, polycarbonate resin, polyurethane resin, methylpentene resin, phenol resin , Melamine resin, epoxy resin, vinyl chloride resin). Further, the shape of the substrate 10 is not limited, and examples thereof include a flat shape such as a flat plate, a flat membrane, a film, and a porous membrane, and a three-dimensional shape such as a cylinder, a stamp, a multiwell plate, and a microchannel. It is done. When using a film, the thickness is not particularly limited, but is usually about 1 μm to 1 mm.

  The transparent semiconductor film 20 is formed by being laminated on the base material 10. If the transparent semiconductor film 20 is made of a material that is transparent and can be laminated with the insulating film 40 so that the sensitive film 50 can be observed from the lower part of the base material 10, it is particularly preferable. It is not limited. Moreover, this transparency should just be transparent to the extent that the biological substance 200 arrange | positioned from the base material 10 to the sensitive film | membrane 50 can be observed using observation apparatuses, such as a microscope, similarly to the base material 10. Translucent materials are not included.

  Specifically, the transparent semiconductor film 20 is formed of an amorphous oxide whose main component is InMZnO (M is at least one of gallium (Ga), aluminum (Al), and iron (Fe)). In particular, an InGaZnO-based amorphous oxide in which M is Ga is preferable. In addition, the transparent semiconductor film 20 containing IGZO as a main component may be added with Al, Fe, Sn or the like as a constituent element as necessary. Since the transparent semiconductor film 20 such as an IGZO semiconductor film can be formed at a low temperature of about 150 ° C. from room temperature, it can be preferably applied to a plastic substrate or a glass substrate having poor heat resistance.

  The transparent semiconductor film 20 may be formed of an oxide semiconductor containing oxide zinc (ZnO) as a main component. In addition to the intrinsic zinc oxide, the transparent semiconductor film 20 containing ZnO as a main component may include lithium (Li), sodium (Na), nitrogen (N), carbon (C), etc. as necessary. P-type dopant and zinc oxide doped with an n-type dopant such as boron (B), aluminum (Al), gallium (Ga), indium (In), magnesium (Mg), beryllium (Be), etc. What added the zinc oxide may be used. Further, the transparent semiconductor film 20 may be formed of an oxide semiconductor such as indium oxide added with tin (indium tin oxide: ITO), indium zinc oxide (IZO), or magnesium oxide (MgO).

  The film thickness of the transparent semiconductor film 20 can be appropriately selected according to various conditions, and is particularly preferably about 20 nm to 100 nm.

The source electrode 30a and the drain electrode 30b are formed on both ends of the transparent semiconductor film 20, that is, adjacent to each other in the horizontal direction perpendicular to the stacking direction. The source electrode 30 a and the drain electrode 30 b are transparent electrodes so that ohmic contact with the transparent semiconductor film 20 can be obtained and the sensitive film 50 can be observed from the lower part of the base material 10. There is no particular limitation as long as it is formed of a conductive film that can be laminated. Moreover, this transparency should just be transparent to the extent that the biological substance 200 arrange | positioned from the base material 10 to the sensitive film | membrane 50 can be observed using observation apparatuses, such as a microscope, similarly to the base material 10. Translucent materials are not included. Specifically, it is formed from a conductive material such as indium tin oxide (ITO), zinc oxide (ZnO), tin oxide (SnO ₂ ).

  The film thickness of the source electrode 30a and the drain electrode 30b can be appropriately selected according to various conditions, and is preferably about 20 nm to 200 nm.

The insulating film 40 is laminated on the transparent semiconductor film 20, the source electrode 30a, and the drain electrode 30b so as to cover the transparent semiconductor film 20, the source electrode 30a, and the drain electrode 30b. In addition, the insulating film 40 is transparent so that the sensitive film 50 can be observed from the lower part of the base material 10, as long as the insulating film 40 is formed of a material capable of laminating the sensitive film 50. It is not particularly limited. Specifically, it is formed from silicon oxide or silicon nitride such as silicon oxide (SiO ₂ ), silicon nitride (SiNx), or silicon nitride oxide (SiOxNy) from the viewpoint of insulation. In particular, it is preferable to use silicon oxide for the insulating film 40 of the present embodiment. The thickness of the insulating film 40 can be appropriately selected according to various conditions, and is particularly preferably about 50 nm to 1 μm.

The sensitive film 50 is laminated on the insulating film 40 and is formed of a sample included in the fluid 100 to be inspected, that is, a substance on which a biological substance 200 such as a cell, DNA, sugar chain, or protein can be placed. In particular, the sensitive film 50 has a region (hereinafter referred to as “arrangement region”) in which the biological substance 200 contained in the retained fluid 100 to be inspected is disposed on the region where the channel is formed in the transparent semiconductor film 20. .) 51 at least. The sensitive film 50 is an ion sensitive film, and is formed of a silicon oxide film (SiO ₂ ), a silicon nitride film (SiN ₄ ), a tantalum oxide film (Ta ₂ O ₅ ), or an aluminum oxide film (Al ₂ O ₃ ). Is done. What is necessary is just to employ | adopt suitably according to the ion species to measure these ion sensitive membranes. If necessary, surface modification for immobilizing DNA protein and sugar chain may be performed.

  The partition wall 60 is formed on the sensitive film 50 and around the arrangement region 51, and has a predetermined height with respect to the stacking direction so that the fluid 100 to be inspected such as an aqueous solution or a culture solution is retained on the sensitive film 50. Have The barrier is not particularly limited as long as it is formed of a material that prevents the fluid 100 to be inspected from leaking out of the arrangement region 51. Specifically, it is made of glass, plastic or metal.

(Operational principle of ISFET biosensor)
Next, the operation principle of the ISFET biosensor in this embodiment will be described with reference to FIG. FIG. 2 is a diagram for explaining the operating principle of the ISFET biosensor in the present embodiment.

The ISFET biosensor of the present embodiment has the above-described configuration, so that the sample included in the fluid 100 to be inspected, that is, the biological substance 200 such as a cell, DNA, sugar chain, protein, etc., is placed on the sensitive membrane 50. It can be arranged. Therefore, as shown in FIG. 2, a variable voltage (reference voltage) is applied via a reference electrode 300 inserted in the fluid 100 to be inspected while applying a voltage V _DS of about 0.1 V to 1 V between the source and drain. applying a V _G to be inspected fluid 100, the potential generated in the sensitive film 50 (hereinafter, also referred to as "membrane potential".) in response to changes in the channel region formed in the transparent semiconductor layer 20 is changed, the drain current A change in _ID can be detected. As a result, a change in the drain current _ID based on the reference voltage V _G , that is, a current-voltage characteristic as a transistor is included in the fluid 100 to be inspected by comparing with a current-voltage characteristic in the biological material 200 measured in advance. The type of sample to be recorded can be specified.

  On the other hand, the biological material 200 placed on the sensitive film 50 by irradiating light from the upper part (the side opposite to the base material 10 side) of the fluid 100 to be inspected is observed from the base material 10 side with a microscope and other optical observations. It can be observed with the instrument. In particular, when an inverted microscope using transmitted light is used, the objective lens can be brought close to the biological substance 200 disposed on the sensitive film 50. In addition to bright field observation, a phase contrast microscope, a differential interference microscope, or the like can be used as necessary. Therefore, it is possible to achieve both the detection of the electrical characteristics of the biological substance 200 disposed on the sensitive film 50 and the observation of the biological substance 200 at a high magnification.

(Function and effect)
As described above, the ISFET biosensor of this embodiment irradiates light from the upper part of the fluid 100 to be inspected (on the side opposite to the base material 10 side), and causes the biological substance 200 placed on the sensitive film 50 to be on the base material 10 side. Can be observed with a microscope or other optical observation equipment, so that the observation of the biological substance 200 is higher than when the biological substance 200 placed on the sensitive film 50 is observed from above the fluid 100 to be inspected. While being able to carry out to magnification, the detection of the electrical property of the biological material 200 and the high magnification observation in the biological material 200 can be made compatible.

  In the ISFET biosensor of this embodiment, since the transparent semiconductor film 20 is formed of a transparent oxide semiconductor, the biological material 200 contained in the fluid 100 to be inspected by an observation device such as a microscope and at a high magnification. It is an object of the present invention to provide a biosensor capable of observing.

  In the ISFET biosensor of this embodiment, since the transparent electrode is formed of either ITO or IZO, the biological material 200 contained in the fluid 100 to be inspected is obtained by an observation device such as a microscope and at a high magnification. It is to provide a biosensor that can be observed.

  In the ISFET biosensor of this embodiment, since the base material 10 is formed of any one of glass, PEN, and PET, the biological material contained in the fluid 100 to be inspected by an observation device such as a microscope and at a high magnification. It is to provide a biosensor capable of observing 200.

  In the ISFET biosensor of this embodiment, the fluid 100 to be inspected can be retained on the arrangement region 51 in the sensitive membrane 50 where the biological material 200 is disposed by the partition wall 60. Characteristics can be detected.

[Second Embodiment]
Next, a second embodiment of the ISFET biosensor according to the present invention will be described with reference to FIGS.

  The ISFET biosensor of this embodiment is transparent, is adjacent to the sensitive film 50, and is a fluid to be tested, instead of the reference electrode 300 being inserted into the fluid 100 to be tested in the first embodiment. 100 has a reference electrode 400 formed in a region where a reference voltage can be applied. In addition, since the other structure is the same as 1st Embodiment, it attaches | subjects the same code | symbol to the same member, and abbreviate | omits the description.

(Configuration of ISFET biosensor)
First, the configuration of the ISFET biosensor of this embodiment will be described with reference to FIG. FIG. 3 is a cross-sectional view of the ISFET biosensor of this embodiment.

  As shown in FIG. 3, the ISFET biosensor of this embodiment includes a base material 10, a transparent semiconductor film 20 laminated on the base material 10, and a source electrode 30 a and a drain formed at both ends of the transparent semiconductor film 20. In the electrode 30b, the transparent semiconductor film 20, the insulating film 40 laminated so as to cover the source electrode 30a and the drain electrode 30b, the sensitive film 50 laminated on the insulating film 40, and the arrangement region 51 of the sensitive film 50 A transparent reference electrode 400 which is adjacent to apply a reference voltage to the fluid 100 to be tested, and a partition wall 60 for retaining the fluid 100 to be tested such as an aqueous solution or a culture solution containing a sample on the sensitive film 50; have.

The transparent reference electrode 400 is formed adjacent to the arrangement region 51 in the sensitive film 50 in the horizontal direction perpendicular to the stacking direction, and the fluid 100 to be inspected is retained so that a part thereof is in contact with the fluid 100 to be inspected. Formed in the area. The transparent reference electrode 400 is provided so as to be insulated from the source electrode 30 a and the drain electrode 30 b, and is laminated in a region other than the arrangement region 51 of the sensitive film 50. Further, the transparent reference electrode 400 is not particularly limited as long as it is a transparent electrode and formed of a conductive film. Moreover, this transparency should just be transparent to the extent that the biological substance 200 arrange | positioned from the base material 10 to the sensitive film | membrane 50 can be observed using observation apparatuses, such as a microscope, similarly to the base material 10. Translucent materials are not included. Specifically, it is formed from a conductive material such as indium tin oxide (ITO), zinc oxide (ZnO), tin oxide (SnO ₂ ).

(Operation of ISFET biosensor)
Next, the operation principle of the ISFET biosensor in this embodiment will be described with reference to FIG. FIG. 4 is a diagram for explaining the operating principle of the ISFET biosensor in the present embodiment.

The ISFET biosensor of the present embodiment has the above-described configuration, so that the sample included in the fluid 100 to be inspected, that is, the biological substance 200 such as a cell, DNA, sugar chain, protein, etc., is placed on the sensitive membrane 50. It can be arranged. Therefore, as in the first embodiment, as shown in FIG. 4, a variable voltage (reference voltage) V is applied via the transparent reference electrode 400 while applying a voltage V _DS of about 0.1 V to 1 V between the source and drain. _{When G} is applied to the fluid 100 to be inspected, the channel region formed in the transparent semiconductor film 20 changes according to the change in the membrane potential generated in the sensitive film 50, and the change in the drain current _ID can be detected. As a result, the change in the drain current _ID based on the reference voltage V _G , that is, the current-voltage characteristic is compared with the current-voltage characteristic in the biological material 200 measured in advance, thereby the sample contained in the fluid 100 to be inspected. The type can be specified.

  On the other hand, as in the first embodiment, the biological material 200 disposed on the sensitive film 50 by irradiating light from the upper part (the side opposite to the base material 10 side) of the fluid 100 to be tested (not shown) Since it can be observed from the 10 side with a microscope or other optical observation equipment, both the detection of the electrical characteristics of the biological material 200 arranged on the sensitive film 50 and the high-magnification observation of the biological material 200 are made compatible. Be able to.

(Function and effect)
As described above, in addition to the effects of the first embodiment, the ISFET biosensor of this embodiment has the fluid under test 100 retained on the sensitive film 50 and then the reference electrode is not inserted into the fluid under test 100. If the fluid 100 is retained on the sensitive film 50, the reference voltage can be applied to the fluid 100 to be inspected by the transparent reference electrode 400, so that the inspection process can be simplified.

[Third Embodiment]
Next, a third embodiment of the ISFET biosensor according to the present invention will be described with reference to FIG.

  In the ISFET biosensor of this embodiment, the arrangement region 52 of the sensitive film 50 is hydrophilic and the region adjacent to the arrangement region 52 of the sensitive film 50 is hydrophobic instead of the partition wall 60 in the first embodiment. It is characterized by having In addition, since the other structure is the same as 1st Embodiment, it attaches | subjects the same code | symbol to the same member, and abbreviate | omits the description.

(Configuration of ISFET biosensor)
First, the configuration of the ISFET biosensor of this embodiment will be described with reference to FIG. FIG. 5 is a cross-sectional view of the ISFET biosensor of this embodiment.

  As shown in FIG. 3, the ISFET biosensor of this embodiment includes a base material 10, a transparent semiconductor film 20 laminated on the base material 10, and a source electrode 30 a and a drain formed at both ends of the transparent semiconductor film 20. An electrode 30b, an insulating film 40 laminated so as to cover the transparent semiconductor film 20, the source electrode 30a and the drain electrode 30b, and a sensitive film 50 laminated on the insulating film 40 and having hydrophobic and hydrophilic regions; ,have.

  The sensitive film 50 is an arrangement area 52 where a substance for exhibiting hydrophilicity is formed by coating or the like, and an area formed on the sensitive film 50, and the fluid 100 to be inspected is retained in the arrangement area 52. Therefore, it has the hydrophobic area | region 53 in which the substance for exhibiting hydrophobicity is formed by application | coating etc. along the outer periphery of the arrangement | positioning area | region 52.

  The arrangement region 52 is formed of the material of the sensitive film 50 without using other materials when the sensitive film 50 is formed of a hydrophilic substance. Further, the arrangement region 52 may be formed by, for example, applying a hydrophilic substance to the surface of the sensitive film 50 or applying a substance having low hydrophilicity or hydrophobicity and UV irradiation instead of the above. Good.

The hydrophobic region 53 performs plasma treatment on the surface region of the corresponding sensitive film 50 by applying a hydrophobic substance or the like, or applying a hydrophilic substance such as an organic substance and plasma of tetrafluoromethane gas. It is formed by. For example, in the present embodiment, when the sensitive film 50 is formed by a hydrophilic silicon oxide film (SiO ₂ ), the arrangement region 52 is formed by the silicon oxide film, and is formed in the hydrophobic region 53. The hydrophobic region 53 is formed in the corresponding region by neglecting an organic substance such as a resist and performing plasma treatment.

(Function and effect)
As described above, the ISFET biosensor of the present embodiment can eliminate the need for the partition wall 60 and other members for convection of the fluid under test 100 to the sensitive membrane 50, so that the fluid under test 100 is sensitive even without the partition wall 60 provided. While being able to stay on the film | membrane 50, the manufacturing process of the said biosensor can be simplified.

(Modification)
In the present embodiment, a reference electrode may be inserted into the fluid under test 100 as in the first embodiment, and a reference voltage may be applied to the fluid under test 100, or as in the second embodiment. A reference electrode may be provided adjacent to the sensitive film 50 while being insulated from the source electrode 30a and the drain electrode 30b. In this case, the reference electrode may be formed so as to have hydrophilicity, and the region adjacent to the reference electrode may be formed so as to have hydrophobicity. However, a part of the reference electrode may be hydrophobic.

[Fourth Embodiment]
Next, a fourth embodiment of the ISFET biosensor according to the present invention will be described with reference to FIG.

  In the ISFET biosensor of the present embodiment, in the first embodiment, the arrangement region of the sensitive film 50 has the property of having cell adhesion, and the region adjacent to the arrangement region of the sensitive film 50 inhibits cell adhesion. It is characterized by having characteristics. In addition, since the other structure is the same as 1st Embodiment, it attaches | subjects the same code | symbol to the same member, and abbreviate | omits the description.

(Configuration of ISFET biosensor)
First, the configuration of the ISFET biosensor of this embodiment will be described with reference to FIG. FIG. 6 is a cross-sectional view of the ISFET biosensor of this embodiment.

  As shown in FIG. 6, the ISFET biosensor of the present embodiment includes a base material 10, a transparent semiconductor film 20 laminated on the base material 10, and a source electrode 30 a and a drain formed at both ends of the transparent semiconductor film 20. The electrode 30b, the insulating film 40 laminated so as to cover the transparent semiconductor film 20, the source electrode 30a and the drain electrode 30b, and the arrangement region (hereinafter referred to as “cell”) laminated on the insulating film 40 and having cell adhesion Also referred to as “adhesive region”) 55 and a sensitive membrane 50 having a region 56 that inhibits cell adhesion (hereinafter referred to as “cell adhesion-inhibiting region”), and an aqueous solution containing a sample on the sensitive membrane 50 or And a partition wall 60 for retaining the fluid 100 to be inspected such as a culture solution.

  The sensitive film 50 is formed along the outer circumference of the arrangement area 55 (cell adhesion area) 55 formed of a high-strength substance that adheres cells, and the arrangement area 55 in order to retain the fluid 100 to be inspected in the arrangement area. Cell adhesion inhibitory region 56.

  “Cell adhesion” means the strength of cell adhesion, that is, ease of cell adhesion, and the cell adhesion region 55 means a region with good cell adhesion, which inhibits cell adhesion. The sex region 56 means a region having poor cell adhesion. Therefore, when the fluid 100 to be inspected containing cells is retained on the substrate on which the cell adhesion region 55 and the cell adhesion inhibition region 56 are patterned, cells adhere to the cell adhesion region 55. Since cells do not adhere to the cell adhesion-inhibiting region 56, cells are arranged in a pattern in the cell adhesion region 55, that is, the arrangement region.

  In addition, since cell adhesion may vary depending on the cells to be adhered, good cell adhesion means that cell adhesion to certain types of cells is good. Accordingly, there may be a case where a plurality of cell adhesive regions 55 for a plurality of types of cells are present on the sensitive film 50, that is, there are two or more levels of cell adhesive regions 55 having different cell adhesive properties.

  Specifically, the cell adhesion region 55 is formed of a film that is made cell-adhesive by subjecting a cell adhesion-inhibiting hydrophilic film containing an organic compound having a carbon-oxygen bond to oxidation treatment and / or decomposition treatment. Yes. The cell adhesion region 55 forms a cell adhesion-inhibiting hydrophilic membrane containing an organic compound having a carbon-oxygen bond on the entire surface of the sensitive membrane 50, and then oxidizes the region where cell adhesion is desired. Further, cell adhesion is imparted to the region by performing a decomposition treatment, and the cell adhesion region 55 is modified. In addition, the part which does not perform the said process is the cell adhesion inhibition area | region 56. FIG.

  The cell adhesive region 55 may be formed of a hydrophilic film containing an organic compound having a carbon-oxygen bond at a low density. In this case, the cell adhesion region 55 has a hydrophilic film containing an organic compound having a carbon-oxygen bond at a high density, whereas the hydrophilic film containing the compound at a low density has a cell adhesion inhibitory property. It utilizes cell adhesion. When a first region where the compound is likely to bind and a second region where the compound is difficult to bind are provided on the surface of the sensitive membrane 50 and a film of the compound is formed on the surface of the sensitive membrane 50, the first region inhibits cell adhesion. The second region becomes the cell adhesion region 55.

  On the other hand, the cell adhesion-inhibiting region 56 is formed by a hydrophilic film formed of an organic compound having a carbon-oxygen bond. The hydrophilic film is a thin film mainly composed of an organic compound having a carbon-oxygen bond, which has water solubility and water swellability, and has a cell adhesion inhibitory property before being oxidized and is oxidized and / or decomposed. There is no particular limitation as long as it has cell adhesion. The carbon-oxygen bond means a bond formed between carbon and oxygen, and is not limited to a single bond but may be a double bond. Examples of the carbon-oxygen bond include a C—O bond, a C (═O) —O bond, and a C═O bond.

  The main raw materials include water-soluble polymers, water-soluble oligomers, water-soluble organic compounds, surface-active substances, amphiphilic substances, and the like, and these are physically or chemically cross-linked with each other, and the sensitive film 50 It becomes a hydrophilic film by being physically or chemically bonded to. Specific water-soluble polymer materials include polyalkylene glycol and derivatives thereof, polyacrylic acid and derivatives thereof, polymethacrylic acid and derivatives thereof, polyacrylamide and derivatives thereof, polyvinyl alcohol and derivatives thereof, and zwitterionic polymers. , Polysaccharides, and the like. Examples of the molecular shape include a straight chain, a branched one, and a dendrimer. More specifically, polyethylene glycol, a copolymer of polyethylene glycol and polypropylene glycol, such as Plonic F108, Plonic F127, poly (N-isopropylacrylamide), poly (N-vinyl-2-pyrrolidone), poly (2- Hydroxyethyl methacrylate), poly (methacryloyloxyethylphosphorylcholine), copolymers of methacryloyloxyethylphosphorylcholine and acrylic monomers, dextran, and heparin, but are not limited thereto. Specific water-soluble oligomer materials and water-soluble low-molecular compounds include alkylene glycol oligomers and derivatives thereof, acrylic acid oligomers and derivatives thereof, methacrylic acid oligomers and derivatives thereof, acrylamide oligomers and derivatives thereof, saponified vinyl acetate oligomers and Derivatives, oligomers composed of zwitterionic monomers and derivatives thereof, acrylic acid and derivatives thereof, methacrylic acid and derivatives thereof, acrylamide and derivatives thereof, zwitterionic compounds, water-soluble silane coupling agents, water-soluble thiol compounds, etc. be able to. More specifically, ethylene glycol oligomer, (N-isopropylacrylamide) oligomer, methacryloyloxyethylphosphorylcholine oligomer, low molecular weight dextran, low molecular weight heparin, oligoethylene glycol thiol, ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene Examples include, but are not limited to, glycol, 2- [methoxy (polyethyleneoxy) -propyltrimethoxysilane, and triethylene glycol-terminated-thiol.

  In addition, it is desirable that the hydrophilic film has a high cell adhesion inhibitory property before the treatment and exhibits a weak cell adhesion property after the oxidation treatment and / or the decomposition treatment. The average thickness of the hydrophilic film is preferably 0.8 nm to 500 μm, more preferably 0.8 nm to 100 μm, more preferably 1 nm to 10 μm, and most preferably 1.5 nm to 1 μm. If the average thickness is 0.8 nm or more, it is preferable because protein adsorption and cell adhesion are not easily affected by the region not covered with the hydrophilic thin film on the substrate surface. Moreover, if the average thickness is 500 μm or less, coating is relatively easy.

(Function and effect)
As described above, the ISFET biosensor of the present embodiment detects the electrical characteristics by concentrating the biological substance 200 in the cell adhesion region 55 and not having the biological substance 200 in the cell adhesion inhibition region 56. The influence of the biological substance 200 existing outside the cell adhesive region 55 can be eliminated, and the electrical characteristics of the biological substance 200 adhered to the cell adhesive region 55 can be accurately detected.

(Modification)
In the present embodiment, a reference electrode may be inserted into the fluid under test 100 as in the first embodiment, and a reference voltage may be applied to the fluid under test 100, or as in the second embodiment. The reference electrode may be provided adjacent to the sensitive film 50 while being insulated from the source electrode 30a and the drain electrode 30b. In this case, a cell adhesion inhibiting region 56 is formed on the reference electrode in order to accurately detect the electrical characteristics of the biological substance 200.

[Fifth Embodiment]
Next, a fifth embodiment of the ISFET biosensor according to the present invention will be described with reference to FIG.

(Configuration of ISFET biosensor)
Next, the configuration of the ISFET biosensor of this embodiment will be described with reference to FIG. FIG. 7 is a cross-sectional view of the ISFET biosensor of this embodiment.

  The ISFET biosensor of this embodiment is characterized in that a coplanar type is applied to the structure of the source electrode 30a and the drain electrode 30b of the first embodiment. In addition, since the other structure is the same as 1st Embodiment, it attaches | subjects the same code | symbol to the same member, and abbreviate | omits the description.

  As shown in FIG. 7, the ISFET biosensor of this embodiment includes a base material 10, a transparent semiconductor film 20 laminated on the base material 10, and source-side diffusion regions 31 a formed at both ends of the transparent semiconductor film 20. And the drain side diffusion region 31b, the source electrode 30a and the drain electrode 30b connected to the source side diffusion region 31a or the drain side diffusion region 31b, and the transparent semiconductor film 20, the source electrode 30a, and the drain electrode 30b. An insulating film 40, a sensitive film 50 laminated on the insulating film 40, and a fluid 100 to be inspected such as an aqueous solution or a culture solution formed on both ends of the sensitive film 50 and containing the sample on the sensitive film 50. And a partition wall 60 for retention.

  The source side diffusion region 31a or the drain side diffusion region 31b is formed by reducing the resistance by performing a predetermined process of plasma processing (for example, hydrogen plasma, argon plasma) on the transparent semiconductor. Further, the source side diffusion region 31 a or the drain side diffusion region 31 b is electrically joined to the source electrode 30 a or the drain electrode 30 b through the contact hole H formed in the insulating film 40.

(Function and effect)
As in the first embodiment, the ISFET biosensor of the present embodiment irradiates light from the upper part of the fluid 100 to be inspected (the side opposite to the base material 10 side) and is disposed on the sensitive membrane 50. Can be observed from the base material 10 side with a microscope or other optical observation equipment, so that the living body-related substance 200 placed on the sensitive film 50 is observed from the upper part of the fluid 100 to be inspected. The observation of the related substance 200 can be performed at a high magnification, and the detection of the electrical characteristics of the biological material 200 and the high-magnification observation of the biological material 200 can be compatible.

(Modification)
In the present embodiment, a reference electrode may be inserted into the fluid under test 100 as in the first embodiment, and a reference voltage may be applied to the fluid under test 100, or as in the second embodiment. The reference electrode may be provided adjacent to the sensitive film 50 while being insulated from the source electrode 30a and the drain electrode 30b.

DESCRIPTION OF SYMBOLS 10 ... Base material 20 ... Semiconductor film 30a ... Source electrode 30b ... Drain electrode 31a ... Source side diffusion region 31b ... Drain side diffusion region 40 ... Insulating film 50 ... Sensitive film 51 ... Disposition region 52 ... Hydrophilic region 53 ... Hydrophobic region 55 ... cell adhesion region 56 ... cell adhesion inhibition region 60 ... partition wall 100 ... fluid to be inspected 200 ... biological material 300, 400 ... reference electrode

Claims (8)

A transparent substrate;
A transparent semiconductor film laminated on the transparent substrate;
A source electrode and a drain electrode formed on both ends of the semiconductor film;
A sensitive film that is laminated on the semiconductor film via an insulating film, and a biological material contained in the fluid to be inspected is disposed on the upper surface ;
The semiconductor film is an amorphous oxide whose main component is InMZnO (M is at least one of Ga, Al, and Fe), an oxide whose main component is ZnO, indium tin oxide, indium zinc oxide, or magnesium oxide. field effect transistor type biosensors characterized that you have been made. A first region having hydrophilicity formed on at least the channel of the semiconductor film on the sensitive film on which the biological substance is disposed, and a horizontal direction perpendicular to the stacking direction in the first region A second region having hydrophobicity formed adjacent to
The field effect transistor type biosensor according to claim 1, further comprising:   A first region having a cell adhesive property formed on at least the channel of the semiconductor film on the upper surface of the sensitive film on which the biological substance is disposed, and a stacking direction in the first region are perpendicular to each other And a second region having a cell adhesion inhibitory property formed by a hydrophilic film containing an organic compound having a carbon-oxygen bond and formed adjacent to the horizontal direction. Field effect transistor biosensor. Insulating the source electrode and the drain electrode, and provided adjacent to the sensitive film, further comprising a reference electrode for applying a variable voltage to the fluid to be inspected,
The field effect transistor type biosensor according to any one of claims 1 to 3, wherein the reference electrode is a transparent electrode.   The field effect transistor type biosensor according to any one of claims 1 to 4, wherein the transparent semiconductor film is formed of a transparent oxide semiconductor.   The field effect transistor type biosensor according to any one of claims 1 to 5, wherein the source electrode and the drain electrode are formed of a transparent electrode.   The field effect transistor type biosensor according to any one of claims 1 to 6, wherein the base material is formed of any one of glass, PEN, and PET.   The field effect transistor biosensor according to claim 1 or 3, further comprising a partition for retaining a fluid to be inspected in the arrangement area around the arrangement area where the biological substance is arranged in at least the sensitive film.

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