JP2012033634A - Manufacturing method and manufacturing device - Google Patents

Manufacturing method and manufacturing device Download PDF

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JP2012033634A
JP2012033634A JP2010170894A JP2010170894A JP2012033634A JP 2012033634 A JP2012033634 A JP 2012033634A JP 2010170894 A JP2010170894 A JP 2010170894A JP 2010170894 A JP2010170894 A JP 2010170894A JP 2012033634 A JP2012033634 A JP 2012033634A
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joining
manufacturing
bonding
target
joined
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Masao Fujino
昌男 藤野
Minako Yoshida
美那子 吉田
Hisao Hori
久夫 堀
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Advantest Corp
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Advantest Corp
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Abstract

PROBLEM TO BE SOLVED: To perform an anodic bonding without damaging a circuit element.SOLUTION: Provided are a manufacturing method and a manufacturing device, both for manufacturing a bonded article by bonding first and second objects to be bonded with each other. The method comprises: a contact step in which a bonding portion of the first object to be bonded is brought into contact with a bonding portion of the second object to be bonded; and a bonding step in which the bonding portions are bonded with each other by locally heating the bonding portions in the entire first and second objects. The bonding step includes passing light, which is allowed to travel in the first object, through the first object and applying the light to the bonding portions where the first and second objects are in contact with each other, thereby heating the bonding portions.

Description

本発明は、製造方法および製造装置に関する。   The present invention relates to a manufacturing method and a manufacturing apparatus.

従来、回路素子を形成した第1の基板と、回路素子を外気と遮断する蓋を形成する第2の基板とを、陽極接合することによって回路素子の気密パッケージを製造していた(例えば、特許文献1参照)。
特許文献1 特開2009−27055公報
Conventionally, an airtight package of a circuit element has been manufactured by anodically bonding a first substrate on which a circuit element is formed and a second substrate on which a lid for blocking the circuit element from outside air is formed (for example, a patent Reference 1).
Patent Literature 1 JP 2009-27055 A

しかしながら、このような陽極接合は、接合すべき2つの基板を接触させて全体を加熱するので、形成した回路素子に加熱温度によるダメージを与える場合があった。   However, in such anodic bonding, since the two substrates to be bonded are brought into contact with each other and heated as a whole, the formed circuit element may be damaged by the heating temperature.

上記課題を解決するために、本発明の第1の態様においては、第1接合対象物および第2接合対象物を接合した接合物を製造する製造方法であって、第1接合対象物および第2接合対象物を接合対象箇所において接触させる接触段階と、第1接合対象物および第2接合対象物全体の中で接合対象箇所を部分的に加熱して当該接合対象箇所を接合させる接合段階と、を備える製造方法を提供する。   In order to solve the above-mentioned problem, in the first aspect of the present invention, there is provided a manufacturing method for manufacturing a joined product obtained by joining a first joining object and a second joining object, the first joining object and the first joining object. 2 a contact stage in which the objects to be joined are brought into contact with each other at a place to be joined, and a joining stage in which the part to be joined is partially heated in the first joining object and the whole second joining object to join the places to be joined. A manufacturing method is provided.

なお、上記の発明の概要は、本発明の必要な特徴の全てを列挙したものではない。また、これらの特徴群のサブコンビネーションもまた、発明となりうる。   It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

本実施形態に係る第1接合対象物110および第2接合対象物120の構成例を示す。The structural example of the 1st joining target object 110 and the 2nd joining target object 120 which concern on this embodiment is shown. 図1の第2接合対象物120のA−A'の断面を、対応する第1接合対象物110と共に示した断面図を示す。Sectional drawing which showed the cross section of AA 'of the 2nd joining target object 120 of FIG. 1 with the corresponding 1st joining target object 110 is shown. 本実施形態に係る接合物100の製造方法の一例を示す。An example of the manufacturing method of the joined article 100 concerning this embodiment is shown. 本実施形態に係る接合物100の製造方法の変形例を示す。The modification of the manufacturing method of the joined article 100 concerning this embodiment is shown. 本実施形態に係る製造装置400の構成例を第1接合対象物110および第2接合対象物120と共に示す。The structural example of the manufacturing apparatus 400 which concerns on this embodiment is shown with the 1st joining target object 110 and the 2nd joining target object 120. FIG.

以下、発明の実施の形態を通じて本発明を説明するが、以下の実施形態は特許請求の範囲にかかる発明を限定するものではない。また、実施形態の中で説明されている特徴の組み合わせの全てが発明の解決手段に必須であるとは限らない。   Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

図1は、本実施形態に係る第1接合対象物110および第2接合対象物120の構成例を示す。図1は、第1接合対象物110および第2接合対象物120の全体の構成例と、第2接合対象物120の一部を拡大した拡大図とを示す。図2は、図1の第2接合対象物120のA−A'の断面を、対応する第1接合対象物110と共に示した断面図を示す。本実施形態は、第1接合対象物110および第2接合対象物120を接合対象箇所において接触させ、接合対象箇所を部分的に加熱して当該接合対象箇所を接合した接合物を製造する。   FIG. 1 shows a configuration example of the first joining object 110 and the second joining object 120 according to the present embodiment. FIG. 1 shows an overall configuration example of the first joining object 110 and the second joining object 120 and an enlarged view in which a part of the second joining object 120 is enlarged. FIG. 2 is a cross-sectional view showing a cross section AA ′ of the second bonding target 120 of FIG. 1 together with the corresponding first bonding target 110. In the present embodiment, the first joining object 110 and the second joining object 120 are brought into contact with each other at the joining target part, and the joining target part is partially heated to manufacture a joined object obtained by joining the joining target parts.

第1接合対象物110および第2接合対象物120は、ガラス基板、シリコン等の半導体基板、または、セラミック基板等の各種の基板であってよい。ここで、第1接合対象物110および第2接合対象物120は、それぞれ異なる材質の基板であってよい。ここで、第1接合対象物110と第2接合対象物120とを、外部から照射する光によって接合する場合は、第1接合対象物110および第2接合対象物120の少なくとも一方が光を透過する材料で形成する。   The first bonding object 110 and the second bonding object 120 may be various substrates such as a glass substrate, a semiconductor substrate such as silicon, or a ceramic substrate. Here, the first joining object 110 and the second joining object 120 may be substrates of different materials. Here, when joining the 1st joining target object 110 and the 2nd joining target object 120 with the light irradiated from the outside, at least one of the 1st joining target object 110 and the 2nd joining target object 120 permeate | transmits light. The material to be formed.

一例として、第1接合対象物110はガラス基板であり、第2接合対象物120はシリコン基板である。第1接合対象物110は、凸部115と、電子回路117と、接合対象箇所130とを備える。また、第2接合対象物120は、凸部125と、電子回路127と、接合対象箇所130とを備える。   As an example, the first bonding target 110 is a glass substrate, and the second bonding target 120 is a silicon substrate. The first bonding target 110 includes a convex portion 115, an electronic circuit 117, and a bonding target portion 130. Further, the second bonding target 120 includes a convex portion 125, an electronic circuit 127, and a bonding target portion 130.

凸部115および凸部125は、それぞれ接合対象箇所130を有してよい。第1接合対象物110および第2接合対象物120は、凸部115および凸部125に設けられた接合対象箇所130で接触してよい。これに代えて、第1接合対象物110に設けた凸部115は、第2接合対象物120の面と接触してよい。この場合、凸部115と第2接合対象物120の面とにそれぞれ接合対象箇所130が設けられてよい。   The convex part 115 and the convex part 125 may each have the joining object location 130. The first joining object 110 and the second joining object 120 may contact at the joining target portion 130 provided on the convex portion 115 and the convex portion 125. It replaces with this and the convex part 115 provided in the 1st joining target object 110 may contact the surface of the 2nd joining target object 120. FIG. In this case, the joining object location 130 may be provided on each of the convex portion 115 and the surface of the second joining object 120.

これに代えて、第2接合対象物120に設けた凸部125は、第1接合対象物110の面と接触してよい。この場合、凸部125と第1接合対象物110の面とにそれぞれ接合対象箇所130が設けられてよい。これに代えて、第1接合対象物110および第2接合対象物120は、いずれも凸部を備えず、第1接合対象物110と第2接合対象物120とが面で接触してもよい。この場合、第1接合対象物110と第2接合対象物120とが接触した面の少なくとも一部を接合対象箇所130としてよい。   It replaces with this and the convex part 125 provided in the 2nd joining target object 120 may contact the surface of the 1st joining target object 110. FIG. In this case, the joining object location 130 may be provided on each of the convex portion 125 and the surface of the first joining object 110. Instead of this, the first joining object 110 and the second joining object 120 are not provided with a convex part, and the first joining object 110 and the second joining object 120 may be in contact with each other on the surface. . In this case, at least a part of the surface where the first joining object 110 and the second joining object 120 are in contact with each other may be used as the joining object location 130.

電子回路117および電子回路127は、第1接合対象物110における接合対象箇所130が存在する面および第2接合対象物120の接合対象箇所130が存在する面に、それぞれ形成される。これに代えて、電子回路117または電子回路127は、第1接合対象物110における接合対象箇所130が存在する面および第2接合対象物120の接合対象箇所130が存在する面のいずれか一方に、形成されてもよい。   The electronic circuit 117 and the electronic circuit 127 are respectively formed on the surface where the joining target portion 130 exists in the first joining object 110 and the surface where the joining target portion 130 exists in the second joining object 120. Instead, the electronic circuit 117 or the electronic circuit 127 is provided on either the surface of the first bonding target 110 where the bonding target location 130 exists or the surface of the second bonding target 120 where the bonding target location 130 exists. , May be formed.

電子回路117および電子回路127は、増幅回路、発信回路、スイッチ、および/またはセンサ等の電子回路を有してよい。また、電子回路117および/または電子回路127は、電気信号に応じて可動する可動部を含むアクチュエータを有してよい。電子回路117および電子回路127は、基板の内部を介して接合対象箇所130が存在する面と反対側の面とを電気的に接続するビアホールを有してよい。   The electronic circuit 117 and the electronic circuit 127 may include an electronic circuit such as an amplifier circuit, a transmission circuit, a switch, and / or a sensor. Further, the electronic circuit 117 and / or the electronic circuit 127 may include an actuator including a movable part that is movable in response to an electric signal. The electronic circuit 117 and the electronic circuit 127 may have via holes that electrically connect the surface on which the joining target portion 130 exists and the surface on the opposite side through the inside of the substrate.

本実施形態において、接合対象箇所130は、電子回路117および/または電子回路127を囲んで接触するように形成され、電子回路117および/または電子回路127を密閉する。   In the present embodiment, the joining target portion 130 is formed so as to surround and contact the electronic circuit 117 and / or the electronic circuit 127, and seals the electronic circuit 117 and / or the electronic circuit 127.

図3は、本実施形態に係る接合物100の製造方法の一例を示す。図3(a)において、第1接合対象物110および第2接合対象物120を、接合対象箇所130で接触させる。図3(b)において、第1接合対象物110を透過する光を、第1接合対象物110を通して第1接合対象物110および第2接合対象物120が接触した接合対象箇所130へと照射して、接合対象箇所130を加熱する。   FIG. 3 shows an example of a method for manufacturing the bonded article 100 according to the present embodiment. In FIG. 3A, the first joining object 110 and the second joining object 120 are brought into contact with each other at the joining object location 130. In FIG. 3 (b), the light that passes through the first object 110 is irradiated through the first object 110 to the part 130 where the first object 110 and the second object 120 are in contact with each other. Then, the joining target portion 130 is heated.

ここで、光源210は、接合対象箇所130へ光を照射する。光源210は、レーザー、LED、またはランプ等の光源から発生する光を、レンズ等の光学部品で接合対象箇所130に集光させてよい。光源210は、第1接合対象物110を透過して、第2接合対象物120で透過しにくい波長の光を照射してよい。一例として、第1接合対象物110はガラス基板であり、第2接合対象物120はシリコン基板であり、光源210は、ガラス基板を透過してシリコン基板で吸収される近紫外波長域から波長1.2μm程度の赤外波長域までの波長の光を照射する。   Here, the light source 210 irradiates the joining target portion 130 with light. The light source 210 may condense light generated from a light source such as a laser, an LED, or a lamp onto the joining target portion 130 with an optical component such as a lens. The light source 210 may irradiate light having a wavelength that is transmitted through the first object 110 and is not easily transmitted through the second object 120. As an example, the first object 110 is a glass substrate, the second object 120 is a silicon substrate, and the light source 210 has a wavelength 1 from the near-ultraviolet wavelength region that is transmitted through the glass substrate and absorbed by the silicon substrate. . Irradiates light with a wavelength up to about 2 μm in the infrared wavelength region.

これによって、光源210から照射された光の少なくとも一部が第1接合対象物110を通過して接合対象箇所130に達する。また、接合対象箇所130に到達した光のうち、少なくとも一部が第2接合対象物120で吸収されることによって光エネルギーが熱エネルギーに転換され、接合対象箇所130を加熱することができる。   As a result, at least a part of the light emitted from the light source 210 passes through the first object to be welded 110 and reaches the part to be welded 130. Moreover, light energy is converted into thermal energy by absorbing at least a part of the light reaching the joining target location 130 by the second joining target 120, and the joining target location 130 can be heated.

ここで、電圧印加部220は、第1接合対象物110および第2接合対象物120間に電圧をかけ、光源210は、第1接合対象物110および第2接合対象物120間に電圧をかけた状態で光を接合対象箇所130へと照射して接合対象箇所130を陽極接合させる。電圧印加部220は、数百Vの負電圧を第1接合対象物110および第2接合対象物120間に印加してよい。   Here, the voltage application unit 220 applies a voltage between the first joining object 110 and the second joining object 120, and the light source 210 applies a voltage between the first joining object 110 and the second joining object 120. In this state, light is irradiated to the bonding target portion 130 to anodic bond the bonding target portion 130. The voltage application unit 220 may apply a negative voltage of several hundred volts between the first object 110 and the second object 120.

例えば、ガラス基板である第1接合対象物110にはNa等の正の可動アルカリイオンとガラス構造に固定された負のSi−Oイオンがある。第1接合対象物110および第2接合対象物120の間に電圧を印加すると、印加した負電圧によってガラス中のアルカリイオンが移動して、シリコン基板である第2接合対象物120との界面にはSi−Oイオンによる厚さ1μm程度の空間電荷層が形成される。 For example, the first bonding object 110 that is a glass substrate includes positive movable alkali ions such as Na + and negative Si—O ions fixed to the glass structure. When a voltage is applied between the first bonding object 110 and the second bonding object 120, the alkali ions in the glass move due to the applied negative voltage, and are moved to the interface with the second bonding object 120, which is a silicon substrate. the Si-O - space-charge layer having a thickness of about 1μm by ion is formed.

このガラス基板側の固定負イオンによる空間電荷層と、シリコン基板側の正電荷との間で静電引力が働き、界面で共有結合が生じて第1接合対象物110および第2接合対象物120は接合対象箇所130にて接合する。以上のプロセスにより、電子回路117および電子回路127を密閉した気密パッケージである接合物100を製造することができる(図3(c))。   An electrostatic attractive force acts between the space charge layer due to the fixed negative ions on the glass substrate side and the positive charges on the silicon substrate side, and a covalent bond is generated at the interface, so that the first bonding object 110 and the second bonding object 120 are formed. Are joined at the joining target location 130. Through the above process, it is possible to manufacture the bonded article 100 which is an airtight package in which the electronic circuit 117 and the electronic circuit 127 are sealed (FIG. 3C).

ここで、第1接合対象物110と第2接合対象物120とを複数の部分で接触させ、第1接合対象物110および第2接合対象物120が接触した複数の接合対象箇所130に対して光源210は光を順に照射して、複数の接合対象箇所130を接合させてよい。また、この場合、光源210の照射位置を複数の接合対象箇所130に含まれる線または面をなぞるように連続的に移動させて、第1接合対象物110および第2接合対象物120を線状または面状に接合してもよい。これによって、第1接合対象物110および第2接合対象物120の全体を加熱することなしに、第1接合対象物110および第2接合対象物120の接合対象箇所130を部分的に加熱することができる。   Here, the first joining object 110 and the second joining object 120 are brought into contact with each other at a plurality of portions, and the plurality of joining object places 130 where the first joining object 110 and the second joining object 120 are in contact with each other. The light source 210 may irradiate light sequentially to join a plurality of joining target portions 130. Further, in this case, the irradiation position of the light source 210 is continuously moved so as to trace the lines or surfaces included in the plurality of bonding target portions 130, and the first bonding target 110 and the second bonding target 120 are linear. Or you may join planarly. Thereby, the part 130 to be joined of the first joining object 110 and the second joining object 120 is partially heated without heating the entire first joining object 110 and the second joining object 120. Can do.

図3(c)において、第1接合対象物110および第2接合対象物120を接合した接合物100を切断して、複数の接合部品200に切り分けてよい。ここで、接合物100を、接合対象箇所130の面内に含まれる切断線230で切断してよい。また、光源210は、接合対象箇所130のうち、切断線230には光を照射しないで接合対象箇所130を接合させてよい。これによって接合物100は、切断線230で容易に切断することができる。   In FIG. 3 (c), the joined object 100 obtained by joining the first joining object 110 and the second joining object 120 may be cut into a plurality of joining parts 200. Here, the joined object 100 may be cut along a cutting line 230 included in the plane of the joining target portion 130. Moreover, the light source 210 may join the joining target location 130 without irradiating light to the cutting line 230 among the joining target locations 130. Accordingly, the bonded article 100 can be easily cut along the cutting line 230.

また、複数の接合部品200は、接合対象箇所130を境界として隣接して形成され、それぞれの接合部品200を密閉すべく、接合部品200が備える電子回路117および/または電子回路127を囲む閉じた形状に光を照射してよい。ここで、光源210は、接合対象箇所130のうち、切断線230には光を照射しないで接合対象箇所130を接合させてよい。これによって接合物100は、切断線230で容易に切断して複数の密閉された接合部品200を製造することができる。   Further, the plurality of joining parts 200 are formed adjacent to each other with the joining target portion 130 as a boundary, and are closed so as to enclose the electronic circuit 117 and / or the electronic circuit 127 included in the joining part 200 in order to seal each joining part 200. The shape may be irradiated with light. Here, the light source 210 may join the joining target portion 130 without irradiating light to the cutting line 230 among the joining target portions 130. As a result, the bonded article 100 can be easily cut along the cutting line 230 to produce a plurality of sealed bonded parts 200.

ここで、切断線230は、第1接合対象物110における接合対象箇所130が存在する面と反対側の面、または第2接合対象物120の接合対象箇所130が存在する面と反対側の面に、フォトリソグラフィ等によってダイシングラインとして形成されてよい。例えば、第2接合対象物120の接合対象箇所130が存在する面と反対側の面に、Au、Cu、またはAl等を含む金属膜を蒸着またはスパッタ等で形成する。形成した金属膜の表面における切断線230を、フォトリソグラフィ等によって選択的にエッチングしてダイシングラインを形成する。このようにして形成したダイシングラインを、接合物100を切断するガイドとして用いる。   Here, the cutting line 230 is a surface on the opposite side to the surface where the joining target portion 130 exists in the first joining object 110 or the surface opposite to the surface where the joining target portion 130 exists on the second joining object 120. In addition, it may be formed as a dicing line by photolithography or the like. For example, a metal film containing Au, Cu, Al, or the like is formed on the surface opposite to the surface where the bonding target portion 130 of the second bonding target 120 exists by vapor deposition or sputtering. A cutting line 230 on the surface of the formed metal film is selectively etched by photolithography or the like to form a dicing line. The dicing line thus formed is used as a guide for cutting the bonded article 100.

以上の本実施例の製造方法によれば、接合物100または接合部品200を得ることができる。接合物100または接合部品200は、電子回路117および電子回路127を密封した気密パッケージであり、製造過程において接合対象箇所130を部分的に加熱するので、電子回路117および電子回路127に加熱によるダメージを低減させることができる。したがって、製造過程における電子回路117および電子回路127の劣化または破壊を防ぐことができる。また、製造後の電子回路117および電子回路127は、加熱によるダメージを受けていないので、長寿命で高い信頼性を得られる。   According to the manufacturing method of the present embodiment described above, the joined object 100 or the joined component 200 can be obtained. The joined object 100 or the joined component 200 is an airtight package in which the electronic circuit 117 and the electronic circuit 127 are sealed, and the part to be joined 130 is partially heated in the manufacturing process, so that the electronic circuit 117 and the electronic circuit 127 are damaged by heating. Can be reduced. Therefore, deterioration or destruction of the electronic circuit 117 and the electronic circuit 127 in the manufacturing process can be prevented. Moreover, since the electronic circuit 117 and the electronic circuit 127 after manufacture are not damaged by heating, a long life and high reliability can be obtained.

図4は、本実施形態に係る接合物100の製造方法の変形例を示す。本変形例の製造方法において、図3に示された本実施形態に係る接合物100の製造方法と略同一のものには同一の符号を付け、説明を省略する。   FIG. 4 shows a modification of the method for manufacturing the bonded article 100 according to this embodiment. In the manufacturing method of this modification, the same reference numerals are given to the substantially same components as those of the manufacturing method of the bonded article 100 according to the present embodiment shown in FIG.

図4(a)において、第1接合対象物110または第2接合対象物120における接合対象箇所130に、光を吸収する光吸収部310を形成する。光吸収部310は、接合対象箇所130に埋め込まれて形成されてよい。この場合、光吸収部310は、接合対象箇所130の表面上にエッチングして形成された凹部に埋め込まれてよい。これに代えて、光吸収部310は、接合対象箇所130の面上に形成された薄膜であってよい。   In FIG. 4A, a light absorbing portion 310 that absorbs light is formed at a bonding target location 130 in the first bonding target 110 or the second bonding target 120. The light absorbing part 310 may be formed by being embedded in the joining target portion 130. In this case, the light absorption unit 310 may be embedded in a recess formed by etching on the surface of the joining target portion 130. It replaces with this and the light absorption part 310 may be the thin film formed on the surface of the joining target location 130. FIG.

光吸収部310は、光源210が照射する光を吸収する物質を含む。光源210が可視光近辺の周波数の光を照射する場合、光吸収部310は、Ni、P、またはC等を含む物質であってよい。光吸収部310は、光源210が照射する光を吸収して熱を発生する。光吸収部310が接合対象箇所130に形成された後に、第1接合対象物110および第2接合対象物120を接合対象箇所130で接触してよい。   The light absorption unit 310 includes a material that absorbs light emitted from the light source 210. When the light source 210 emits light having a frequency in the vicinity of visible light, the light absorption unit 310 may be a substance containing Ni, P, C, or the like. The light absorbing unit 310 absorbs light emitted from the light source 210 and generates heat. After the light absorption part 310 is formed at the joining target location 130, the first joining target 110 and the second joining target 120 may be brought into contact at the joining target location 130.

図4(b)において、光源210から照射された光の少なくとも一部が第1接合対象物110を通過して接合対象箇所130および光吸収部310に達する。また、接合対象箇所130および光吸収部310に到達した光のうち、少なくとも一部が第2接合対象物120および光吸収部310で吸収されることによって光が熱となって接合対象箇所130を加熱する。このように、光吸収部310を形成することで、光源210が照射する光の吸収量を増加させるので、接合対象箇所130を効率的に加熱することができる。   In FIG. 4B, at least a part of the light emitted from the light source 210 passes through the first object 110 and reaches the joining target location 130 and the light absorbing portion 310. In addition, at least a part of the light reaching the joining target portion 130 and the light absorbing portion 310 is absorbed by the second joining target object 120 and the light absorbing portion 310, so that the light becomes heat and the joining target portion 130 is changed. Heat. In this way, by forming the light absorbing portion 310, the amount of light absorbed by the light source 210 is increased, so that the joining target portion 130 can be efficiently heated.

また、第2接合対象物120における接合対象箇所130とは反対の面に、光を接合対象箇所130に向けて反射する反射部320を設けてよい。反射部320は、光源210が照射する光を反射する鏡等であってよい。ここで、反射部320は、第2接合対象物120に接して設けられてよく、これに代えて、反射部320は、第2接合対象物120と予め定められた間隔離れた位置に設けられてよい。   Moreover, you may provide the reflection part 320 which reflects light toward the joining target location 130 in the surface opposite to the joining target location 130 in the 2nd joining target object 120. FIG. The reflection unit 320 may be a mirror that reflects light emitted from the light source 210. Here, the reflection part 320 may be provided in contact with the second bonding target 120, and instead, the reflection part 320 is provided at a position spaced apart from the second bonding target 120 by a predetermined distance. It's okay.

これによって、光源210が照射する光のうち、接合対象箇所130を透過した光を反射部320で反射させ、再び接合対象箇所130に照射することができる。したがって、接合対象箇所130に照射する光の量を実質的に増加させることができるので、接合対象箇所130を効率的に加熱することができる。   As a result, of the light emitted from the light source 210, the light transmitted through the joining target portion 130 can be reflected by the reflecting portion 320 and irradiated again to the joining target portion 130. Therefore, since the amount of light irradiated to the joining target portion 130 can be substantially increased, the joining target portion 130 can be efficiently heated.

また、第1接合対象物110における光が入射する側に、接合対象箇所130以外の部分を覆うマスク330を設けてよい。これによって、接合対象箇所130以外の部分に光源210が照射する光を遮ることができるので、接合対象箇所130以外の部分を光照射によって加熱することを防ぐことができる。   Moreover, you may provide the mask 330 which covers parts other than the joining target location 130 in the light incident side in the 1st joining target object 110. FIG. Thereby, since the light emitted from the light source 210 can be blocked by the portions other than the bonding target portion 130, it is possible to prevent the portions other than the bonding target portion 130 from being heated by light irradiation.

ここで、マスク330は、第1接合対象物110に接して設けられてよく、これに代えて、マスク330は、光源210と第1接合対象物110との間の空間に設けられてよい。これに代えて、マスク330は、光源210に設けられてもよい。光源210が、空間的に広がって光を照射するランプ等の場合、マスク330を光源210に設けることで、接合対象箇所130以外の部分に光源210が照射する光を遮ることができる。   Here, the mask 330 may be provided in contact with the first joining object 110, and instead, the mask 330 may be provided in a space between the light source 210 and the first joining object 110. Alternatively, the mask 330 may be provided on the light source 210. In the case where the light source 210 is a lamp or the like that spreads light and irradiates light, the mask 330 is provided on the light source 210, so that the light emitted from the light source 210 can be blocked on portions other than the joining target portion 130.

また、第1接合対象物110における接合対象箇所130が存在する面および第2接合対象物120の接合対象箇所130が存在する面の一方に、陽極結合のための電圧を印加する電圧印加線340を設けてよい。電圧印加線340は、第1接合対象物110における接合対象箇所130が存在する面と反対側の面のそれぞれに設けた配線と、基板の内部を介してそれぞれの面の配線間を電気的に接続するビアホールとを有してよい。これに代えて、電圧印加線340は、電子回路117および/または電子回路127の一部であってもよい。   Further, a voltage application line 340 for applying a voltage for anodic coupling to one of the surface where the bonding target portion 130 exists in the first bonding target 110 and the surface where the bonding target portion 130 exists in the second bonding target 120. May be provided. The voltage application line 340 is electrically connected between the wiring provided on each of the surfaces opposite to the surface where the bonding target portion 130 exists in the first bonding object 110 and the wiring on each surface through the inside of the substrate. And via holes to be connected. Alternatively, the voltage application line 340 may be a part of the electronic circuit 117 and / or the electronic circuit 127.

電圧印加線340によって、電圧印加部220は、陽極接合に用いる電圧を接合対象箇所130に印加することができる。また、電圧印加部220は、接合対象箇所130が存在する面から接合対象箇所130に電圧を印加できるので、接合対象箇所130が存在しない面から電圧を印加する場合と比較して接合対象箇所130に近く、より理想的な位置から電圧を印加することができる。   With the voltage application line 340, the voltage application unit 220 can apply a voltage used for anodic bonding to the bonding target portion 130. Moreover, since the voltage application part 220 can apply a voltage to the joining target location 130 from the surface where the joining target location 130 exists, the joining target location 130 is compared with the case where a voltage is applied from the surface where the joining target location 130 does not exist. The voltage can be applied from a more ideal position.

また、第1接合対象物110および第2接合対象物120を加熱している間に、接合対象箇所130以外の少なくとも一部を冷却してよい。例えば、第2接合対象物120の一部を冷却する冷却部350を設ける。冷却部350は、第2接合対象物120に近接して設けられてよく、好ましくは第2接合対象物120に接して設けられる。   Moreover, you may cool at least one part other than the joining target location 130, while heating the 1st joining target object 110 and the 2nd joining target object 120. FIG. For example, a cooling unit 350 that cools a part of the second bonding target 120 is provided. The cooling unit 350 may be provided in the vicinity of the second object 120, and is preferably provided in contact with the second object 120.

冷却部350は、ペルチェ効果を利用したペルチェ素子であってよく、これに代えて、コンプレッサを用いて液体が気化する気化熱を利用して放熱するガス冷却装置であってもよい。これに代えて、冷却部350は、液体を循環させる液冷装置であってもよい。これに代えて、冷却部350は、冷却ファンであってもよい。これに代えて、冷却部350は、熱伝導がしやすい金属による放熱器または放熱パイプであってもよい。また、冷却部350は、これらの組み合わせであってもよい。   The cooling unit 350 may be a Peltier element that utilizes the Peltier effect, and may instead be a gas cooling device that dissipates heat using the heat of vaporization of the liquid using a compressor. Alternatively, the cooling unit 350 may be a liquid cooling device that circulates liquid. Alternatively, the cooling unit 350 may be a cooling fan. Instead of this, the cooling unit 350 may be a heat radiator or a heat radiating pipe made of metal that easily conducts heat. The cooling unit 350 may be a combination of these.

冷却部350によって、接合対象箇所130を加熱した場合に電子回路117または電子回路127へ熱伝導で伝わる熱の影響を、低減させることができる。また、本変形例において、第2接合対象物120に冷却部350を設ける例を説明したが、これに代えて、第1接合対象物110側および第2接合対象物120側の両方から接合対象箇所130以外の少なくとも一部を冷却してもよい。これによって、電子回路117および電子回路127を冷却することができ、接合対象箇所130を加熱した場合の電子回路117および電子回路127への熱伝導のダメージを低減させることができる。   The cooling part 350 can reduce the influence of heat that is transferred to the electronic circuit 117 or the electronic circuit 127 by heat conduction when the joining target portion 130 is heated. Moreover, although the example which provides the cooling part 350 in the 2nd joining target object 120 was demonstrated in this modification, it replaces with this and is joined from both the 1st joining target object 110 side and the 2nd joining target object 120 side. You may cool at least one part other than the location 130. FIG. Thereby, the electronic circuit 117 and the electronic circuit 127 can be cooled, and the heat conduction damage to the electronic circuit 117 and the electronic circuit 127 when the joining target portion 130 is heated can be reduced.

これに代えて、電子回路117および/または電子回路127がアクチュエータを有する場合、アクチュエータは、自身を冷却する冷却部350を有する熱駆動アクチュエータであってよく、第1接合対象物110および第2接合対象物120を加熱している間に、冷却部350を用いてアクチュエータを冷却してもよい。これによって、第1接合対象物110または第2接合対象物120に冷却部350を設けることなしに、電子回路117および電子回路127を冷却することができ、接合対象箇所130を加熱した場合の電子回路117および電子回路127への熱伝導のダメージを低減させることができる。   Alternatively, when the electronic circuit 117 and / or the electronic circuit 127 includes an actuator, the actuator may be a thermally driven actuator having a cooling unit 350 that cools itself, and the first joint object 110 and the second joint While the object 120 is being heated, the actuator may be cooled using the cooling unit 350. Accordingly, the electronic circuit 117 and the electronic circuit 127 can be cooled without providing the cooling unit 350 on the first bonding target 110 or the second bonding target 120, and the electrons when the bonding target portion 130 is heated. Damage to heat conduction to the circuit 117 and the electronic circuit 127 can be reduced.

以上の本変形例の製造方法によって、接合対象箇所130を部分的に加熱することができ、図3(c)および図3(d)に示された接合物100および接合部品200と略同一の気密パッケージを製造することができる。これによって、製造過程において接合対象箇所130を部分的にかつ効率的に加熱するので、電子回路117および電子回路127に加熱によるダメージを低減させることができる。   According to the manufacturing method of the present modification described above, the joining target portion 130 can be partially heated, and is substantially the same as the joined object 100 and the joined component 200 shown in FIGS. 3 (c) and 3 (d). Airtight packages can be manufactured. Accordingly, the joining target portion 130 is partially and efficiently heated in the manufacturing process, so that damage to the electronic circuit 117 and the electronic circuit 127 due to heating can be reduced.

以上の本実施例および本変形例において、製造過程において接合対象箇所130を部分的に加熱する例を説明した。これに加えて、第1接合対象物110および第2接合対象物120を、接合温度未満の温度に熱してもよい。例えば、第1接合対象物110および第2接合対象物120の全体を熱する温度調節部を設けて、温度調節部が第1接合対象物110および第2接合対象物120の全体を熱した状態で接合対象箇所130に光を当てる。   In the present embodiment and this modification, the example in which the joining target portion 130 is partially heated in the manufacturing process has been described. In addition to this, the first joining object 110 and the second joining object 120 may be heated to a temperature lower than the joining temperature. For example, the temperature control part which heats the whole 1st joining target object 110 and the 2nd joining target object 120 is provided, and the temperature control part heated the whole 1st joining target object 110 and the 2nd joining target object 120 Then, light is applied to the joining target portion 130.

ここで、温度調節部が加熱する温度は接合温度未満で、かつ、電子回路117および電子回路127にダメージを与えない温度であってよい。これによって、接合対象箇所130に光の照射を開始してから接合対象箇所130が接合温度に達するまでの時間を短縮することができ、接合対象箇所130を接合する時間を短縮することができる。   Here, the temperature heated by the temperature adjusting unit may be a temperature that is lower than the bonding temperature and that does not damage the electronic circuit 117 and the electronic circuit 127. Accordingly, it is possible to shorten the time from the start of irradiation of light to the joining target portion 130 until the joining target portion 130 reaches the joining temperature, and the joining time of the joining target portion 130 can be shortened.

図5は、本実施形態に係る製造装置400の構成例を第1接合対象物110および第2接合対象物120と共に示す。製造装置400は、第1接合対象物110および第2接合対象物120を接合した接合物100および接合部品200を製造する。製造装置400は、接合装置410と、切断装置420とを備える。   FIG. 5 shows a configuration example of the manufacturing apparatus 400 according to the present embodiment together with the first joining object 110 and the second joining object 120. The manufacturing apparatus 400 manufactures the joined object 100 and the joined component 200 obtained by joining the first joining object 110 and the second joining object 120. The manufacturing apparatus 400 includes a joining device 410 and a cutting device 420.

接合装置410は、ステージ部412と、搬送部414と、電圧印加部416と、加熱部418とを有する。ステージ部412は、第1接合対象物110または第2接合対象物120を搭載して固定する。ステージ部412は、第1接合対象物110および/または第2接合対象物120を冷却する冷却部350を含んでよい。また、ステージ部412は、第1接合対象物110および第2接合対象物120を接合温度未満の温度に熱する温度調節部を含んでもよい。   The bonding apparatus 410 includes a stage unit 412, a transport unit 414, a voltage application unit 416, and a heating unit 418. The stage unit 412 mounts and fixes the first joining object 110 or the second joining object 120. The stage unit 412 may include a cooling unit 350 that cools the first bonding target 110 and / or the second bonding target 120. Further, the stage unit 412 may include a temperature adjusting unit that heats the first bonding target object 110 and the second bonding target object 120 to a temperature lower than the bonding temperature.

搬送部414は、第1接合対象物110または第2接合対象物120を搭載して搬送する。搬送部414は、第1接合対象物110および/または第2接合対象物120を冷却する冷却部350を含んでよい。また、搬送部414は、第1接合対象物110および第2接合対象物120を接合温度未満の温度に熱する温度調節部を含んでもよい。   The transport unit 414 mounts and transports the first joining object 110 or the second joining object 120. The transport unit 414 may include a cooling unit 350 that cools the first bonding target 110 and / or the second bonding target 120. Moreover, the conveyance part 414 may also contain the temperature control part which heats the 1st joining target object 110 and the 2nd joining target object 120 to temperature lower than joining temperature.

ステージ部412と搬送部414は、第1接合対象物110および第2接合対象物120とを、接合対象箇所130において接触させてよい。この場合、ステージ部412と搬送部414は、第1接合対象物110および第2接合対象物120の空間配置をセンサ等で検出しつつ、第1接合対象物110および/または第2接合対象物120を移動させて接触させてよい。これに代えて、ステージ部412と搬送部414は、予め接合対象箇所130において接触した第1接合対象物110および第2接合対象物120を搭載してもよい。   The stage part 412 and the conveyance part 414 may make the 1st joining target object 110 and the 2nd joining target object 120 contact in the joining target location 130. FIG. In this case, the stage unit 412 and the transport unit 414 detect the first bonding object 110 and / or the second bonding object while detecting the spatial arrangement of the first bonding object 110 and the second bonding object 120 with a sensor or the like. 120 may be moved into contact. Instead of this, the stage unit 412 and the transport unit 414 may be mounted with the first bonding target object 110 and the second bonding target object 120 that have previously contacted at the bonding target point 130.

電圧印加部416は、一例として、搬送部414を介して第1接合対象物110に、ステージ部412を介して第2接合対象物120に電気的に接続して、第1接合対象物110および第2接合対象物120間に電圧をかける。加熱部418は、光源210を含み、電圧印加部416が第1接合対象物110および第2接合対象物120間に電圧をかけた状態において、接合対象箇所130へと光を照射して接合対象箇所130を加熱して陽極接合させる。   For example, the voltage application unit 416 is electrically connected to the first bonding target 110 via the transport unit 414 and to the second bonding target 120 via the stage unit 412, and the first bonding target 110 and A voltage is applied between the second joining objects 120. The heating unit 418 includes a light source 210, and in a state where the voltage application unit 416 applies a voltage between the first bonding target object 110 and the second bonding target object 120, light is irradiated to the bonding target portion 130 to be bonded. The part 130 is heated and anodic bonded.

加熱部418は、複数の接合対象箇所130のそれぞれに光を照射すべく、光源210を移動させてよく、これに代えて、鏡等の光学部品を含み、当該光学部品の配置を移動させて複数の接合対象箇所130のそれぞれに光を照射してよい。これに代えて、ステージ部412が第1接合対象物110および第2接合対象物120を移動させ、加熱部418は複数の接合対象箇所130のそれぞれに光を照射してもよい。以上の接合装置410によって、第1接合対象物110および第2接合対象物120間は接合対象箇所130において陽極接合され、接合物100が製造される。   The heating unit 418 may move the light source 210 so as to irradiate light to each of the plurality of bonding target portions 130. Instead, the heating unit 418 includes an optical component such as a mirror and moves the arrangement of the optical component. You may irradiate each of several joining object location 130 with light. Instead, the stage unit 412 may move the first bonding target 110 and the second bonding target 120, and the heating unit 418 may irradiate each of the plurality of bonding target points 130 with light. With the above-described joining device 410, the first joining object 110 and the second joining object 120 are anodically joined at the joining object location 130, and the joined object 100 is manufactured.

切断装置420は、接合装置410が製造した接合物100を切断して接合部品200を製造する。切断装置420は、回転する砥石によって接合物100を切断するダイシング装置であってよい。これに代えて、切断装置420は、レーザー光を用いて接合物100の内部に集光させて、熱的な改質層を形成して割段するダイシング装置であってもよい。   The cutting device 420 cuts the bonded article 100 manufactured by the bonding device 410 to manufacture the bonded component 200. The cutting device 420 may be a dicing device that cuts the bonded article 100 with a rotating grindstone. Instead of this, the cutting device 420 may be a dicing device that condenses the inside of the bonded article 100 using a laser beam to form a thermal modification layer.

ここで、製造装置400は、加熱部418が含む光源210の出力パワーを調節して、かつ、出力する光を接合物100の内部に集光させることで、接合物100を切断してよい。これに代えて、加熱部418は、ダイシング用の光源をさらに備え、製造装置400は、接合物100を切断する場合には当該ダイシング用の光源に切り替え、出力する光を接合物100の内部に集光させてよい。これによって製造装置400は、装置サイズを小型化することができ、接合物100を製造後に直ちにダイシングに移行できるので、接合部品200の製造スループットを短縮することができる。   Here, the manufacturing apparatus 400 may cut the bonded article 100 by adjusting the output power of the light source 210 included in the heating unit 418 and condensing the output light inside the bonded article 100. Instead, the heating unit 418 further includes a light source for dicing, and the manufacturing apparatus 400 switches to the light source for dicing when cutting the bonded article 100, and outputs light to the inside of the bonded object 100. It may be condensed. As a result, the manufacturing apparatus 400 can reduce the size of the apparatus and can shift to dicing immediately after manufacturing the bonded article 100, so that the manufacturing throughput of the bonded component 200 can be shortened.

以上の本実施例に係る製造装置400によれば、第1接合対象物110および第2接合対象物120の全体を加熱することなしに、接合対象箇所130を部分的に加熱して陽極接合させ、接合物100を製造することができる。また、製造装置400は、接合物100を切断して接合部品200を製造することができる。   According to the manufacturing apparatus 400 according to the above-described embodiment, the joining target portion 130 is partially heated and anodic bonded without heating the entire first joining object 110 and the second joining object 120. The bonded product 100 can be manufactured. In addition, the manufacturing apparatus 400 can manufacture the joined component 200 by cutting the joined article 100.

以上の本発明の実施の形態において、接合物100または接合部品200は、電子回路117および/または電子回路127を備える例を説明したが、これに代えて、接合物100または接合部品200は、電子回路117および電子回路127を備えなくてもよい。また、この場合、第1接合対象物110および第2接合対象物120はそれぞれ凸部115および凸部125を備えなくてもよい。   In the above-described embodiment of the present invention, the example in which the joined object 100 or the joined component 200 includes the electronic circuit 117 and / or the electronic circuit 127 has been described. The electronic circuit 117 and the electronic circuit 127 may not be provided. In this case, the first joining object 110 and the second joining object 120 may not include the convex part 115 and the convex part 125, respectively.

また、以上の本発明の実施の形態において、光を照射することによって、接合対象箇所130を部分的に加熱して接合物100を製造することを説明した。これに代えて、熱源を接合対象箇所130の直近に備え、接合対象箇所130を部分的に加熱してもよい。   Moreover, in the above embodiment of this invention, it demonstrated that the joining object location 130 was heated partially by irradiating light, and the joining thing 100 was manufactured. Instead of this, a heat source may be provided in the immediate vicinity of the joining target portion 130 and the joining target portion 130 may be partially heated.

この場合、熱源は、電熱線等のヒーターであってよい。また、第1接合対象物110における接合対象箇所130が存在する面および第2接合対象物120の接合対象箇所130が存在する面のいずれか一方に、電熱線を設けてよい。電熱線は、第1接合対象物110における接合対象箇所130が存在する面と反対側の面のそれぞれに設けた配線と、基板の内部を介してそれぞれの面の配線間を電気的に接続するビアホールと接続されてよい。これに代えて、電熱線は、電子回路117および/または電子回路127の一部であってもよい。   In this case, the heat source may be a heater such as a heating wire. Moreover, you may provide a heating wire in any one of the surface in which the joining target location 130 in the 1st joining target object 110 exists, and the surface in which the joining target location 130 of the 2nd joining target object 120 exists. The heating wire electrically connects between the wiring provided on each of the surfaces opposite to the surface where the bonding target portion 130 exists in the first bonding object 110 and the wiring on each surface through the inside of the substrate. It may be connected to a via hole. Alternatively, the heating wire may be a part of the electronic circuit 117 and / or the electronic circuit 127.

また、以上の本発明の実施の形態において、第1接合対象物110および第2接合対象物120の間に電圧をかける陽極接合によって、接合物100を製造することを説明した。これに代えて、第1接合対象物110および第2接合対象物120は、加熱することによって接合されてもよい。この場合、第1接合対象物110および第2接合対象物120の少なくとも一方は、加熱によって融解して接合してよい。これに代えて、第1接合対象物110および第2接合対象物120の少なくとも一方に、加熱によって融解する材料を備わってよい。これに代えて、第1接合対象物110および第2接合対象物120の少なくとも一方に、加熱によって固化する材料が塗布されてよい。   Further, in the above-described embodiment of the present invention, it has been described that the bonded object 100 is manufactured by anodic bonding in which a voltage is applied between the first bonded object 110 and the second bonded object 120. Instead of this, the first joining object 110 and the second joining object 120 may be joined by heating. In this case, at least one of the first joining object 110 and the second joining object 120 may be melted and joined by heating. Instead, at least one of the first joining object 110 and the second joining object 120 may be provided with a material that melts by heating. Instead, a material that is solidified by heating may be applied to at least one of the first object 110 and the second object 120.

以上、本発明を実施の形態を用いて説明したが、本発明の技術的範囲は上記実施の形態に記載の範囲には限定されない。上記実施の形態に、多様な変更または改良を加えることが可能であることが当業者に明らかである。その様な変更または改良を加えた形態も本発明の技術的範囲に含まれ得ることが、特許請求の範囲の記載から明らかである。   As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

特許請求の範囲、明細書、および図面中において示した装置、システム、プログラム、および方法における動作、手順、ステップ、および段階等の各処理の実行順序は、特段「より前に」、「先立って」等と明示しておらず、また、前の処理の出力を後の処理で用いるのでない限り、任意の順序で実現しうることに留意すべきである。特許請求の範囲、明細書、および図面中の動作フローに関して、便宜上「まず、」、「次に、」等を用いて説明したとしても、この順で実施することが必須であることを意味するものではない。   The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

100 接合物、110 第1接合対象物、115 凸部、117 電子回路、120 第2接合対象物、125 凸部、127 電子回路、130 接合対象箇所、200 接合部品、210 光源、220 電圧印加部、230 切断線、310 光吸収部、320 反射部、330 マスク、340 電圧印加線、350 冷却部、400 製造装置、410 接合装置、412 ステージ部、414 搬送部、416 電圧印加部、418 加熱部、420 切断装置 DESCRIPTION OF SYMBOLS 100 Joined object, 110 1st joining target object, 115 convex part, 117 electronic circuit, 120 2nd joining target object, 125 convex part, 127 electronic circuit, 130 joining object location, 200 joining component, 210 light source, 220 Voltage application part , 230 cutting line, 310 light absorption part, 320 reflection part, 330 mask, 340 voltage application line, 350 cooling part, 400 manufacturing apparatus, 410 joining apparatus, 412 stage part, 414 transport part, 416 voltage application part, 418 heating part 420 Cutting device

Claims (9)

第1接合対象物および第2接合対象物を接合した接合物を製造する製造方法であって、
前記第1接合対象物および前記第2接合対象物を接合対象箇所において接触させる接触段階と、
前記第1接合対象物および前記第2接合対象物全体の中で前記接合対象箇所を部分的に加熱して当該接合対象箇所を接合させる接合段階と、
を備える製造方法。
A manufacturing method for manufacturing a joined product obtained by joining a first joining object and a second joining object,
A contact stage in which the first joining object and the second joining object are brought into contact at a joining object location;
A joining step of joining the joining object part by partially heating the joining object part in the first joining object and the entire second joining object;
A manufacturing method comprising:
前記接合段階は、前記第1接合対象物を透過する光を前記第1接合対象物を通して前記第1接合対象物および前記第2接合対象物が接触した前記接合対象箇所へと照射して、前記接合対象箇所を加熱する請求項1に記載の製造方法。   The joining step irradiates light that passes through the first joining object through the first joining object to the joining object place where the first joining object and the second joining object are in contact with each other, and The manufacturing method of Claim 1 which heats a joining object location. 前記第1接合対象物および前記第2接合対象物間に電圧をかける電圧印加段階を更に備え、
前記接合段階は、前記第1接合対象物および前記第2接合対象物間に電圧をかけた状態で前記光を前記接合対象箇所へと照射して前記接合対象箇所を陽極接合させる
請求項2に記載の製造方法。
A voltage application step of applying a voltage between the first bonding object and the second bonding object;
The joining step irradiates the joining target portion with the light in a state where a voltage is applied between the first joining subject and the second joining subject to anodic join the joining subject portion. The manufacturing method as described.
前記第1接合対象物における前記接合対象箇所が存在する面および前記第2接合対象物の前記接合対象箇所が存在する面に、電子回路をそれぞれ形成する回路形成段階を更に備え、
前記接触段階は、前記接合対象箇所が前記電子回路を囲んで接触させ、
前記接合段階は、前記接合対象箇所を接合して密閉させる請求項3に記載の製造方法。
A circuit forming step of forming an electronic circuit on the surface of the first object to be joined and the surface of the second object to be joined and the surface of the second object to be joined;
In the contacting step, the joining target portion surrounds and contacts the electronic circuit,
The manufacturing method according to claim 3, wherein in the joining step, the joining target portions are joined and sealed.
前記電子回路は、アクチュエータを含む請求項4に記載の製造方法。   The manufacturing method according to claim 4, wherein the electronic circuit includes an actuator. 前記接合段階は、前記第1接合対象物および前記第2接合対象物を加熱している間に、前記接合対象箇所以外の少なくとも一部を冷却する請求項4または5に記載の製造方法。   The manufacturing method according to claim 4, wherein in the joining step, at least a part other than the joining target portion is cooled while the first joining object and the second joining object are heated. 第1接合対象物および第2接合対象物を接合した接合物を製造する製造方法であって、
前記第1接合対象物および前記第2接合対象物を接合対象箇所において接触させる接触段階と、
前記第1接合対象物を透過する光を前記第1接合対象物を通して前記接合対象箇所へと照射して、前記接合対象箇所を接合させる接合段階と、
を備える製造方法。
A manufacturing method for manufacturing a joined product obtained by joining a first joining object and a second joining object,
A contact stage in which the first joining object and the second joining object are brought into contact at a joining object location;
A step of irradiating light to be transmitted through the first object to be bonded to the position to be bonded through the first object to be bonded and bonding the position to be bonded;
A manufacturing method comprising:
前記第1接合対象物はガラス基板であり、前記第2接合対象物はシリコン基板である請求項1から7のいずれかに記載の製造方法。   The manufacturing method according to claim 1, wherein the first bonding target is a glass substrate, and the second bonding target is a silicon substrate. 第1接合対象物および第2接合対象物を接合した接合物を製造する製造装置であって、
前記第1接合対象物および前記第2接合対象物を接合対象箇所において接触させる搬送部と、
前記第1接合対象物および前記第2接合対象物全体の中で前記接合対象箇所を部分的に加熱して当該接合対象箇所を接合させる加熱部と、
を備える製造装置。
A manufacturing apparatus for manufacturing a joined product obtained by joining a first joining object and a second joining object,
A transport unit for bringing the first joining object and the second joining object into contact at a joining object location;
A heating unit that partially heats the portion to be joined in the first and second joining objects, and joins the joining portion;
A manufacturing apparatus comprising:
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