JP2012021223A - Plasma treatment apparatus and surface modifying method of contact probe - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique for coating a DLC film having a resistivity of 10Ωm or less and a hardness of 600 Hv or more at an end of a contact probe and a plasma treatment apparatus using the technique, and to provide a contact probe coated with the conductive DLC and a probe card using the probe.SOLUTION: A surface modifying method of a contact probe includes: a step of holding a contact probe base material to a supporting means having a structure where a high electric field applied on an end of the contact probe base material is reduced and cleaning a surface of the contact probe base material in a plasma treatment apparatus; a step of irradiating the surface of the base material with nitrogen ions and carbon ions to form a mixed film of nitride and carbide of a metal of the base material; and a step of generating hydrocarbon gas discharge plasma to form a conductive DLC coating at an end of a contact probe.

Description

  The present invention relates to a method for modifying the surface of a contact probe for a probe card used when measuring various electrical characteristics of a semiconductor integrated circuit such as an LSI.

  In a manufacturing process of a semiconductor wafer constituting a semiconductor integrated circuit such as an LSI, a probe card is used to measure various electrical characteristics of the integrated circuit on the semiconductor wafer. The contact probe for measurement used in the probe card is required to have wear resistance, flexibility, etc., and therefore, tungsten, rhenium tungsten, copper beryllium, palladium silver alloy, etc. are used as the material.

  On the other hand, aluminum or an aluminum alloy is generally used for an electrode pad of a semiconductor integrated circuit such as LSI, which is an object to be measured by a probe card. The tips of the fine contact probes that come into contact with these electrode pads are heated during energization, and the aluminum chips peeled off from the electrode pads adhere to the tip of the probe and oxidize. Cannot be measured. Therefore, there is a problem that the aluminum oxide must be removed every time depending on the number of contacts. Moreover, it was necessary to frequently replace the probe card.

  As a method for solving this problem, a technique for coating a diamond-like carbon film (hereinafter abbreviated as a DLC film) on which at least the tip of the contact probe hardly adheres to aluminum has been developed. A DLC film formed by a conventional manufacturing method is generally an electrically insulating film or a high resistance film. Therefore, in order to obtain a low-resistance DLC film, a DLC film containing conductive fine particles and a DLC film to which a metal element is added have been developed.

  Patent Document 1 discloses a technique for forming a DLC film containing a metal at least at a contact portion of a tip portion of a probe made of tungsten or rhenium tungsten. Examples of the mixed metal include tungsten, molybdenum, gold, silver, nickel, cobalt, chromium, palladium, rhodium, iron, indium, tin, lead, aluminum, tantalum, titanium, copper, manganese, platinum, bismuth, zinc, and cadmium. It contains at least one of these elements, and its content is 1 wt% or more and 50 wt% or less.

However, according to Patent Document 1, the resistivity of a DLC film made of only carbon is 251.6 Ω · m, the resistivity of a DLC film containing 12.5% by weight of tungsten is 34.11 Ω · m, and molybdenum is 12.5%. The resistivity of the DLC film containing 5% by weight is 5.82 Ω · m, which is shown to be extremely higher than the resistivity of a contact probe made of only tungsten of 10 ⁻⁶ Ω · m. The electrical resistance at the contact portion of the actual probe tip is from several tens of Ω to several kΩ, and there is a problem that the contact portion generates heat. In order to suppress heat generation, it is necessary to reduce the resistivity of the DLC film at the tip of the contact probe to 10 ⁻² Ω · m or less.

  In addition, when a negative bias voltage is applied to the tip of the contact probe in the plasma processing apparatus to form a DLC film having excellent adhesion, a high electric field concentrates on the tip of the contact probe, so that the contact probe There was a problem that abnormal discharge occurred at the tip, and the tip of the contact probe was damaged.

Furthermore, in order to form a conductive DLC film having a low efficiency of 10 ⁻² Ω · m or less, it is necessary to form the DLC film while maintaining the tip of the contact probe at 250 ° C. to 450 ° C. There has been a problem that a method for heating the tip of a fine contact probe and a method for controlling the temperature have not been established.

JP 2001-289874 A (Nippon Electronic Materials Co., Ltd.)

The present invention has been invented in view of the above problems, and provides a technique and a plasma processing apparatus for coating a DLC film having a resistivity of 10 ⁻² Ω · m or less and a hardness of 600 Hv or more on at least the tip of the contact probe. It is an object of the present invention to provide a contact probe surface modification method that can be used stably for a long period of time, a contact probe manufactured by the surface modification method, and a probe card using the contact probe.

  According to a first aspect of the present invention, there is provided a plasma processing apparatus, a plasma processing container, a vacuum exhaust means for evacuating the plasma processing container, a raw material gas introducing means for introducing a raw material gas, and a discharge in the plasma processing container. Plasma processing comprising plasma generating means for generating plasma, support means for supporting the workpiece, and a bias power source for applying a bias voltage for surface modification by bringing the plasma into contact with the surface of the workpiece The apparatus is characterized in that the support means is a structure for clamping a contact probe base material, and is a support means having a structure having a notch around the tip of the contact probe.

  A plasma processing apparatus according to a second aspect of the present invention is the plasma processing apparatus according to the first aspect, wherein the support means sandwiches the contact probe base material, and a notch is formed around the tip of the contact probe. And the tip of the contact probe is narrowed so that the surface of the support means facing the discharge plasma is substantially the same surface.

  A plasma processing apparatus according to claim 3 of the present invention is characterized in that, in the plasma processing apparatus according to claim 1 or 2, heating means and a temperature control device that are electrically insulated are attached to the support means. To do.

  A plasma processing apparatus according to a fourth aspect of the present invention is the plasma processing apparatus according to any one of the first to third aspects, wherein the discharge plasma generating means is a low inductance inductively coupled high frequency antenna.

  The plasma processing apparatus according to claim 5 of the present invention is the plasma processing apparatus according to any one of claims 1 to 4, wherein the bias power supply is a pulse power supply that outputs a negative pulse voltage of 1 kV to 15 kV. It is characterized by.

  A plasma processing apparatus according to a sixth aspect of the present invention is the plasma processing apparatus according to any one of the first to fourth aspects, wherein the bias power source outputs a negative pulsating voltage or a DC voltage having a voltage of 200 V to 1 kV. It is characterized by being.

  In the contact probe surface modification method according to claim 7 of the present invention, the support means sandwiching the contact probe base material is installed in a plasma processing container, and argon gas is introduced into the plasma processing container. The discharge plasma is generated by the plasma generating means, at least the tip of the contact probe base is brought into contact with the discharge plasma, and a negative bias voltage is applied to the support and the contact probe base to Cleaning (a), generating a discharge plasma containing nitrogen or nitrogen compound gas and hydrocarbon gas, applying a negative bias voltage to the support and the contact probe base material, A step (b) of irradiating carbon ions to form a mixed film of nitride and carbide of the base metal, and further introducing a hydrocarbon gas; And (c) forming a conductive diamond-like carbon film on the surface of the mixed film by generating a discharge plasma and applying a negative bias voltage to the support and the contact probe base material. To do.

  A contact probe surface modification method according to an eighth aspect of the present invention relates to the contact probe surface modification method according to the seventh aspect, wherein in the steps (a) to (c), the negative bias voltage has a peak value. It is a negative pulse voltage of 1 kV to 15 kV.

  A surface modification method for a contact probe according to a ninth aspect of the present invention relates to the surface modification method for a contact probe according to the seventh aspect, wherein in the step (c), the negative bias voltage is a negative voltage of 200 V to 1 kV. It is a pulsating current voltage or a direct current voltage.

  According to a tenth aspect of the present invention, there is provided a method for surface modification of a precontact lobe, wherein the probe base material temperature is 250 ° C. in step (c) of the probe surface modification method according to any one of the seventh to ninth aspects. A diamond-like carbon film is formed by maintaining at a temperature of 450 ° C.

The contact probe surface modification method according to claim 11 of the present invention is the contact probe surface modification method according to any one of claims 7 to 10, wherein the electrical conductivity of the conductive diamond-like carbon film is 10 ^−. It is a conductive diamond-like carbon film having ² Ω · m to 10 ⁻⁵ Ω · m and a hardness of 600 Hv to 2000 Hv.

  A probe card according to a twelfth aspect of the present invention is surface-modified by the plasma processing apparatus according to any one of the first to sixth aspects of the present invention and / or the surface modification method according to any one of the seventh to eleventh aspects. Manufactured using the contact probe.

According to the present invention, there is provided a plasma processing apparatus capable of coating a DLC film having a resistivity of 10 ⁻² Ω · m or less and a hardness of 600 Hv or more on at least the tip of the contact probe, and a surface modification method of the contact probe. By the surface modification method of the processing apparatus and the contact probe, it is possible to manufacture a contact probe that can be used stably for a long period of time, and a probe card using this probe can be provided.

It is a schematic diagram of the plasma processing apparatus which concerns on this invention. It is a perspective view of one Embodiment of the workpiece support means which concerns on this invention. It is a schematic process drawing of the surface modification method for a contact probe according to the present invention. It is a figure which shows the evaluation result by XRD of the electroconductive DLC film which concerns on this invention. It is a figure which shows the relationship between the resistivity of the electroconductive DLC film concerning this invention, and base-material temperature.

  The plasma processing apparatus according to the present invention generates a plasma plasma, a vacuum exhaust means for evacuating the plasma processing container, a raw material gas introducing means for introducing a raw material gas, and discharge plasma in the plasma processing container. In the plasma processing apparatus, comprising: a plasma generating means; a supporting means for supporting the workpiece; and a bias power source for applying a bias voltage for bringing the plasma into contact with the surface of the workpiece to modify the surface. The plasma processing apparatus is characterized in that the support means has a structure that clamps the contact probe base material, and has a support means that has a notch around the tip of the contact probe.

  A schematic diagram of a plasma processing apparatus according to the present invention is shown in FIG. As for the plasma generating means, a low inductance inductively coupled high frequency antenna 22 is introduced into the plasma processing vessel 21 via a feedthrough 32. The inductively coupled high frequency antenna is connected to a high frequency power source 23 via a matching unit 24. The source gas is introduced from the gas introduction port 33 and is exhausted from the exhaust port 34 by a vacuum exhaust means (not shown) to adjust the source gas pressure. The support means 25 is installed opposite to the inductively coupled high-frequency antenna 22, a contact probe 26 as a workpiece is clamped on one surface, and an insulating plate 30 is sandwiched on the other surface. 29 is attached. The support means is made of a material having excellent electrical and thermal conductivity, such as aluminum, and is connected to the bias power source 28 via the feedthrough 32. The heating plate is connected to the temperature control device 31 through the feedthrough 32.

  A perspective view of an embodiment of the support means 25 according to the present invention is shown in FIG. The support means includes a support tool 25a and a support tool 25b, and a contact probe 26 is sandwiched therebetween. A notch 27 is provided around the tip 261 of the contact probe 26. The front end portion 261 of the contact probe and the surface 251 facing the discharge plasma of the support means 25 are narrowed so as to be substantially the same surface.

  By adopting such a configuration, when a high bias voltage, for example, a negative pulse voltage of, for example, 5 kV or more is applied to the contact probe base material, the concentration of a high electric field on the tip 261 of the contact probe can be reduced. it can. Therefore, the probe tip 261 can be prevented from being damaged by spark discharge or the like. Another effect of this configuration is that the temperature of the contact probe and its tip 261 can be maintained at a predetermined temperature by heat conduction and radiant heat by heating the support means 25 to a predetermined temperature.

  The fact that the tip 261 of the contact probe and the surface 251 of the support means 25 facing the discharge plasma are made to be substantially the same surface does not have to be completely the same surface, and the two effects described above. Means that the tip 261 of the contact probe may protrude beyond the surface 251 of the support means 25 facing the discharge plasma. It is desirable that the tip 261 of the contact probe is slightly settled from the surface 251 of the support means 25.

  The role of the notch 27 is indispensable for the formation of a conductive DLC film by relieving the high electric field generated at the probe tip and enabling ion irradiation around the probe tip. The shape can be a groove shape as shown in FIG. 2, but is not limited to the groove shape, and does not impair the two effects, for example, a cylinder centered on the tip of the contact probe Or oval cylindrical shape. Further, the size and depth of the notch are not specified, but are designed in consideration of the bias voltage to be applied and the coating region of the DLC film.

An electric heating plate or lamp heating can be employed as the heating means. The discharge plasma generating means may employ a rod-like or U-shaped low inductance inductively coupled high frequency antenna (LIA). ICP by LIA can easily obtain discharge plasma having a density of 10 ¹¹ pieces / cm ³ or more, and is suitable for forming a conductive DLC film. The frequency of the high frequency power is not particularly limited, but high frequency power of 13.56 MHz to 54 MHz is preferable.

  The bias power supply 28 is for applying a negative bias voltage to the support means and the contact probe substrate to irradiate the surface of the substrate with high energy ions. The output voltage is 1 kV to 15 kV, the pulse width is 2 μs to 10 μs, This is a pulse power source that generates a negative pulse voltage having a repetition frequency of 1 kHz to 4 kHz. Further, in the step of forming the conductive DLC film, a bias power source that can irradiate with low energy ions of 1 keV or less and generates a negative pulsating voltage with a voltage of 200 V to 1000 V, a frequency of 10 kHz to 100 kHz, or a DC voltage. Can be used.

  In the surface modification method for a contact probe according to the present invention, a contact probe base material is sandwiched between supporting means installed in the plasma processing vessel, an argon gas is introduced into the plasma processing vessel, and discharge is performed by the plasma generating means. (A) generating plasma, bringing at least the tip of the contact probe base material into contact with the discharge plasma, and applying a negative bias voltage to the support means and the contact probe base material to clean the probe base surface And generating a discharge plasma containing nitrogen or a nitrogen compound gas and a hydrocarbon gas, applying a negative bias voltage to the support means and the contact probe base material, and irradiating the surface of the base material with nitrogen ions and carbon ions. A step (b) of forming a mixed film of nitride and carbide of the base metal, and further introducing a hydrocarbon gas to Is generated Ma, consisting said supporting means and by applying a negative bias voltage to the contact probe substrate forming a conductive DLC film on the mixed coating surface (c).

  A schematic process of the surface modification method for a contact probe according to the present invention is shown in FIG. In the step (a), a negative pulse voltage of 5 to 15 kV is applied to the support means and the contact probe base material in the discharge plasma of argon gas or a mixed gas of argon and hydrogen in the step of cleaning the surface of the contact probe base material. Then, a cleaning process is performed by irradiation with argon ions and hydrogen ions. In general, a metal oxide which is an insulator is present on the surface of the metal substrate, but this is removed.

  In the step (b), a nitrogen compound gas, for example, a discharge plasma of a nitrogen gas and a hydrocarbon gas is generated, and a negative pulse voltage of 5 to 15 kV is applied to the contact probe base material by applying a negative pulse voltage to the contact probe substrate. To do. As an example, in the case of the tungsten probe base material 11, a mixture film 12 such as a compound of nitrogen and carbon, WN, WC, and WCN is formed on the surface of the base material. These mixture coatings are indispensable steps for improving the adhesion between the substrate 11 and the conductive DLC coating 13 formed on the surface and for growing the conductive DLC coating 13. The mixing ratio of nitrogen gas and hydrocarbon gas is preferably adjusted according to the material of the base material. Further, the functionally gradient film can be formed by irradiating with high energy nitrogen ions of 10 keV or higher in the first half of the process and irradiating with low energy carbon ions of 10 keV or lower in the second half.

In the step (c), a hydrocarbon gas is introduced to generate discharge plasma, and a negative bias voltage, for example, a negative pulse voltage, is applied to the support means and the contact probe base to apply conductive DLC to the mixed coating surface. Laminate the coating. As the negative pulse voltage, a pulse voltage of 1 kV to 10 kV and a duty ratio of 0.3% to 10% can be used. The electrical resistivity of the conductive DLC film is preferably 10 ⁻² Ω · m or less, and is 10 ⁻³ Ω · m to 10 ⁻⁵ Ω · m. Moreover, it is desirable that the hardness is a conductive DLC film having a hardness of 600 Hv to 2000 Hv.

  In the step (a) according to the present invention, the surface of the contact probe base material is sputter etched, and in the step (b), nitrogen ions and carbon ions are implanted. Therefore, the negative bias voltage has a peak value of 1 kV or more, A negative pulse voltage of 5 kV to 15 kV is desirable. Furthermore, in the step (c), in addition to the negative high voltage pulse as the negative bias voltage, a negative pulsating voltage or DC voltage of 200 V to 1 kV can be applied to form a conductive DLC film. .

According to the present invention, in step (c), the temperature of the probe base material is maintained at 250 ° C. to 450 ° C. to form a conductive DLC film. According to the experimental results of the inventors, it is indispensable that the substrate temperature is in the above temperature range in order to obtain a conductive DLC film having a resistivity of 10 ⁻² Ω · m or less and a hardness of 1000 Hv or more.

  If the contact probe surface-modified by the surface modification method is used, it is possible to provide a probe card in which electrode pad metal such as an integrated circuit does not adhere and has excellent wear resistance.

  Hereinafter, a method for modifying the surface of the contact probe will be described with reference to FIG. An inductively coupled high-frequency antenna 22 is installed in the plasma processing apparatus 21, and a support means 25 is disposed so as to oppose the high-frequency antenna and sandwich the contact probe base material 26 therebetween. A heating plate 29 was attached to the back surface of the support means via an insulating plate 30. A rhenium-containing tungsten substrate was used for the contact probe, and its temperature was maintained at a predetermined temperature by the temperature controller 31.

  In step (a), the inside of the plasma processing apparatus is evacuated to a high vacuum in advance, and the gas is sufficiently discharged. Then, a mixed gas of 20% hydrogen gas and 80% argon gas is introduced from the gas inlet 33 to a pressure of 0.6. The plasma was adjusted to Pascal, and high frequency power having a frequency of 13.56 MHz and an output of 1 kW was fed to the inductively coupled high frequency antenna 22 to generate discharge plasma. A negative pulse voltage of 10 kV was applied to the support means 25 and the contact probe base 26 to clean the surface of the contact probe base. The support means 25 and the contact probe base 26 were kept at 300 ° C.

  Next, in step (b), a mixed gas of 70% nitrogen gas and 30% acetylene gas is introduced as a raw material gas, the gas pressure is adjusted to 0.5 Pascal, and 700 W of electric power is supplied to the high frequency antenna 22. A discharge plasma was generated. A pulse voltage of −15 kV, a pulse width of 5 μs, and a repetition frequency of 1 kHz was applied to the support means 25. Since the supporting means and the contact probe base material are heated by ion irradiation, the power applied to the heating plate 29 is controlled and maintained at about 300 ° C. After ion irradiation for 10 minutes under these conditions, the mixing ratio was changed to 30% nitrogen gas and 70% acetylene gas, and ion irradiation was performed for 10 minutes.

  In step (c), a mixed gas of methane gas 70% and acetylene gas 30% is introduced as a raw material gas, the gas pressure is adjusted to 0.8 Pascal, and 700 W of electric power is supplied to the high-frequency antenna 22 to generate discharge plasma. Generated. A pulse voltage of −5 kV, a pulse width of 5 μs, and a repetition frequency of 2 kHz was applied to the support means 25. The temperature of the support means and the contact probe substrate was changed from 220 ° C. to 450 ° C. to form a DLC film. A conductive DLC film having a thickness of 0.2 μm was obtained by forming the film for 15 minutes under the above film forming conditions.

In order to evaluate the physical properties and electrical characteristics of the conductive DLC film according to the present invention, a conductive DLC film is formed on the oxide film of the silicon substrate simultaneously with the formation of the DLC film on the tip of the contact probe, and the characteristics are evaluated. did. The X-ray analysis result by XRD is shown in FIG. Broad peak near 24 degrees and 45 degrees is due to graphite crystallites of sp ² bond, sharp peak near 50 degrees is due to sp ³ bonds the diamond crystallites (200 surface). DLC film according to the present invention has revealed that those diamond crystallites of the graphite crystallites and the sp ³ bonds sp ² bonds in the amorphous carbon are mixed.

FIG. 5 shows the resistivity measurement results using a four-probe measuring instrument Napson, RT-7. The resistivity of the DLC film is 2 × 10 ⁻² Ω · m at a substrate temperature of 220 ° C. and 1.2 × 10 ⁻⁴ Ω · m at a temperature of 400 ° C. It can be seen that the resistivity decreases as the substrate temperature increases. This is thought to be due to an increase in the proportion of microcrystals as the substrate temperature is higher.

  Step (a) and step (b) are performed under the same conditions as in Example 1. In step (c), a mixed gas of 70% methane gas and 30% acetylene gas is introduced as a raw material gas, and the gas pressure is adjusted to 0.8 Pascal. The high frequency antenna 22 was fed with 700 W of electric power to generate discharge plasma. A pulse voltage of −900 V, a pulse width of 15 μs, and a repetition frequency of 33 kHz was applied to the support means 25 and the contact probe base material 26. The temperature of the support means and the contact probe substrate was changed from 250 ° C. to 450 ° C. to form a DLC film. A film was formed for 15 minutes under the film forming conditions to obtain a conductive DLC film having a thickness of 0.25 μm.

  FIG. 5 shows the measurement results of resistivity by the four-probe method. It became clear that the resistivity decreased with the substrate temperature as in Example 1.

In the above embodiment, ICP discharge plasma by LIA is used as the discharge plasma generation means, but it is not limited to this, and plasma generation means capable of generating discharge plasma having a plasma density of about 10 ¹¹ pieces / cm ³ or more, for example, Plasma generation means such as CCP discharge plasma, ECR discharge plasma, direct current glow discharge, etc. can be adopted. As a method for forming a conductive DLC film, plasma ion implantation film formation (PBIID), plasma CVD, sputtering, vacuum Needless to say, an arc evaporation method or the like can be used. Further, the raw material gas in the step (c) is not limited to methane gas and acetylene gas, and hydrocarbon gas such as ethane, ethylene, benzene, toluene, or a mixed gas thereof can be used.

  Furthermore, although the said Example demonstrated the Example which used the tungsten base material containing rhenium for a contact probe, it can apply also to the contact probe base material of a copper alloy or an aluminum alloy.

11, 26 Contact probe base material 12 Nitride / carbide mixed coating 13 Conductive DLC coating 21 Plasma processing vessel 22 Inductively coupled antenna 23 High frequency power source 24 Matching unit 25 Support means 27 Notch 28 Bias power source 29, heating plate 31 Temperature control apparatus

Claims (12)

  A plasma processing container, a vacuum exhaust means for evacuating the inside of the plasma processing container, a raw material gas introducing means for introducing a raw material gas, a plasma generating means for generating discharge plasma in the plasma processing container, and a workpiece In a plasma processing apparatus, comprising: a supporting means for supporting; and a bias power source for applying a bias voltage for surface modification by bringing plasma into contact with the surface of the workpiece, the supporting means sandwiches the contact probe base material. A plasma processing apparatus, characterized in that the plasma processing apparatus is a support means having a structure that has a notch around the tip of the contact probe.   The support means has a structure for sandwiching the contact probe base material, and has a notch around the tip of the contact probe, and the tip of the contact probe and the surface of the support means facing the discharge plasma; The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is narrowed so as to be substantially flush with each other.   3. The plasma processing apparatus according to claim 1, wherein a heating means and a temperature control device that are electrically insulated are attached to the support means.   4. A plasma processing apparatus according to claim 1, wherein the discharge plasma generating means is a low inductance inductively coupled high frequency antenna.   5. The plasma processing apparatus according to claim 1, wherein the bias power supply is a pulse power supply that outputs a negative pulse voltage having a voltage of 1 kV to 15 kV. 6.   5. The plasma processing apparatus according to claim 1, wherein the bias power supply is a bias power supply that outputs a negative pulsating voltage or a DC voltage having a voltage of 200 V to 1 kV. 6.   The support means having the contact probe base material sandwiched in a plasma processing container is installed, argon gas is introduced into the plasma processing container, discharge plasma is generated by the plasma generating means, and the contact is made to the discharge plasma. A step (a) of contacting at least the tip of the probe base material and applying a negative bias voltage to the support means and the contact probe base material to clean the surface of the probe base material; and nitrogen or nitrogen compound gas and hydrocarbon gas A mixed plasma film of nitride and carbide of the base metal by applying a negative bias voltage to the support means and the contact probe base material and irradiating the base surface with nitrogen ions and carbon ions. Forming a discharge plasma by further introducing a hydrocarbon gas to form a contact with the support means Surface modification method of the contact probe characterized by comprising from a step of applying a negative bias voltage to the lobe base to form a conductive diamond-like carbon coating to the mixture coating film surface (c).   8. The contact probe surface modification method according to claim 7, wherein, in steps (a) to (c), the negative bias voltage is a negative pulse voltage having a peak value of 1 kV to 15 kV.   8. The contact probe surface modification method according to claim 7, wherein, in the step (c), the negative bias voltage is a negative pulsating voltage or a DC voltage of 200V to 1 kV.   The probe according to any one of claims 7 to 9, wherein, in the step (c), the temperature of the support means and the probe base material is maintained at 250 ° C to 450 ° C to form a diamond-like carbon film. Surface modification method. 11. The conductive diamond-like carbon film is an electrically conductive diamond-like carbon film having an electric resistivity of 10 ⁻² Ω · m to 10 ⁻⁵ Ω · m and a hardness of 600 Hv to 2000 Hv. The surface modification method for a contact probe according to any one of the above.   The plasma processing apparatus according to any one of claims 1 to 6 and / or the contact probe surface-modified by the surface modification method according to any one of claims 7 to 11 and the probe manufactured using the probe. Probe card.

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