JP2012010543A - Electric power conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electric power conversion device which improves cooling performance of a semiconductor element utilizing the heat transmission through a sealing part.SOLUTION: An electric power conversion device 1 is formed by laminating multiple semiconductor modules 2. Each of the semiconductor modules 2 has a semiconductor element 21, a heat radiator plate 22, a sealing part 23, a wall 24, and penetration coolant passages 41. The multiple semiconductor modules 2 are laminated in a normal direction of a heat radiation surface 221. Lids 3 are provided at the semiconductor modules 2 arranged on both ends of the lamination direction. Creepage coolant passages 42 are formed on the inner side of the wall 24, more specifically, on spaces between the adjacent semiconductor modules 2 or spaces between the semiconductor module 2 and the lid 3. A side surface 231 facing the penetration coolant passage 41 in the sealing part 23 is covered with a ceramic layer 26.

Description

  The present invention relates to a power conversion device configured by stacking a plurality of semiconductor modules each including a semiconductor element and a coolant channel for cooling the semiconductor element provided therein.

  For example, as a power conversion device such as an inverter mounted on an electric vehicle, a hybrid vehicle, or the like, as shown in FIG. 13, a semiconductor element 921 is built in and a coolant channel 94 for cooling the semiconductor element 921 is provided inside. There is a power conversion device 9 formed by stacking a plurality of semiconductor modules 92 (Patent Document 1).

The semiconductor module 92 in the power conversion device 9 includes a semiconductor element 921, a heat radiating plate 922 thermally connected to the semiconductor element 921, and a heat radiating surface 925 of the heat radiating plate 922 exposed. A sealing portion 923 made of resin for sealing the heat radiating plate 922 and a wall portion 924 made of resin formed around the sealing portion 923 are included. A refrigerant flow path 94 is provided between the wall portion 924 and the sealing portion 923.
That is, in the semiconductor module 92, the semiconductor element 921 is resin-molded together with the heat radiating plate 922, and a space serving as the refrigerant flow path 94 is formed therein.

The power conversion device 9 is configured by stacking and connecting a plurality of semiconductor modules 92 in the normal direction of the heat dissipation surface 925. Thereby, the refrigerant flow path 94 is also formed between the heat radiation surfaces 925 of the heat radiation plates 922 in the adjacent semiconductor modules 92.
Then, the semiconductor element 921 can be cooled by allowing the cooling medium W to flow through the refrigerant flow path 94.

  Since the power conversion device 9 is configured with the refrigerant flow path 94 by stacking the plurality of semiconductor modules 92 as described above, it is not necessary to provide a separate cooler, and simplification and miniaturization. And facilitating assembly.

JP 2006-165534 A

However, due to demands for increased current and voltage of controlled power handled by the power conversion device 9, or downsizing and higher density of the power conversion device 9, the amount of heat generated by the semiconductor element increases or heat is dissipated. In some cases, it may be difficult to improve the cooling performance.
In such a case, in the configuration of the power conversion device 9, it may be difficult to improve the cooling performance.
Specifically, in the power conversion device 9, the heat of the semiconductor element 921 is radiated to the cooling medium W mainly through the heat radiating surface 925 of the heat radiating plate 922, but the sealing portion 923 made of resin is heated. Since the conductivity is low, the semiconductor element 921 is hardly cooled from the portion covered with the sealing portion 923.
Therefore, when sufficient cooling performance cannot be obtained only by cooling the semiconductor element 921 via the heat radiating plate 922, the temperature of the semiconductor element 921 may increase.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a power conversion device capable of improving the cooling performance of a semiconductor element by utilizing heat transfer via a sealing portion. .

The present invention is a power conversion device configured by laminating a plurality of semiconductor modules incorporating semiconductor elements,
The semiconductor module includes the semiconductor element, a heat sink thermally connected to the semiconductor element, and a resin that seals the semiconductor element and the heat sink with the heat dissipation surface of the heat sink exposed. A sealing portion, a wall portion formed around the sealing portion in a direction orthogonal to the normal direction of the heat dissipation surface and projecting in the normal direction from the heat dissipation surface; the wall portion and the seal A through coolant channel formed between the stopper and the stopper,
The plurality of semiconductor modules are stacked in the normal direction of the heat dissipation surface,
The semiconductor module disposed at both ends in the stacking direction is provided with a lid that covers the outer opening of the wall in the stacking direction,
Between the adjacent semiconductor modules and between the lid portion and the semiconductor module and inside the wall portion, a creeping refrigerant flow path is formed along the heat dissipation surface and in communication with the through refrigerant flow path. Has been
And at least the side surface which faces the said penetration refrigerant flow path in the said sealing part is coat | covered with the ceramic layer, It exists in the power converter device characterized by the above-mentioned (Claim 1).

  In the power conversion device, at least a side surface of the sealing portion facing the through coolant channel is covered with a ceramic layer. As a result, in the portion facing the through refrigerant flow path, the number of sealing portions made of resin that tends to be low in thermal conductivity is reduced, and a ceramic layer that tends to have relatively high thermal conductivity is arranged accordingly. The heat exchange efficiency between the cooling medium flowing through the through coolant flow path and the semiconductor element can be improved. As a result, the cooling performance of the semiconductor element can be improved by utilizing heat transfer through the sealing portion.

Moreover, since the ceramic layer arrange | positioned at the side surface of the said sealing part has insulation, the fall of the insulation by reducing the said sealing part and arrange | positioning the said ceramic layer can be prevented.
In addition, as described above, since the cooling performance of the semiconductor element can be improved, the density and size of the semiconductor element can be increased. As a result, the power converter can be downsized.

  As mentioned above, according to this invention, the power converter device which can improve the cooling performance of a semiconductor element also using the heat transfer via a sealing part can be provided.

FIG. 3 is a perspective development view of the power conversion device according to the first embodiment. Sectional drawing of the power converter device in Example 1 equivalent to the AA arrow cross section of FIG. 1 is a perspective view of a semiconductor module in Embodiment 1. FIG. FIG. 3 is a sectional view taken along line B-B in FIG. 2. FIG. 5 is a cross-sectional view taken along line CC in FIG. 4. The circuit diagram of the power converter device in Example 1. FIG. Sectional drawing of the power converter device in Example 2. FIG. Sectional drawing of the power converter device in Example 3. FIG. Sectional drawing of the power converter device in Example 4. FIG. Sectional drawing of the power converter device in Example 5. FIG. Sectional drawing of the semiconductor module in Example 6. FIG. Sectional drawing of the power converter device in Example 7. FIG. Sectional drawing of the power converter device in background art.

In the present invention, the stacking direction of the plurality of semiconductor modules may be substantially parallel to the normal direction of the heat dissipation surface, and the creeping refrigerant flow along the heat dissipation surface is between the semiconductor elements of adjacent semiconductor modules. What is necessary is just the state in which a path is formed.
Moreover, although it is preferable that the said heat sink in the said semiconductor module is arrange | positioned in the state which clamps the said semiconductor element from both sides, you may arrange | position only in the one surface side of the said semiconductor element.
Moreover, it is preferable that the said wall part is also shape | molded with resin. In this case, the sealing part, the wall part, and the through coolant channel formed between them can be easily formed, and the configuration of the power converter is simplified, downsized, and low cost. Can be realized.
The ceramic layer is preferably made of, for example, alumina, silicon nitride, or the like. In this case, both the voltage resistance and thermal conductivity of the ceramic layer can be maintained high.

Moreover, it is preferable that the said side surface of the said sealing part is formed in the same surface as the side end surface of the said heat sink, or an inner side from it (Claim 2).
In this case, the volume of the sealing part can be made sufficiently small to further improve the cooling efficiency of the semiconductor element via the sealing part.

Moreover, it is more preferable that the side surface of the sealing portion is formed inside the side end surface of the heat radiating plate.
In this case, the volume of the sealing part can be further reduced, and the cooling efficiency of the semiconductor element via the sealing part can be further improved. Moreover, since the ceramic layer formed on the side surface of the sealing portion is disposed inside the heat sink, it is possible to effectively prevent the ceramic layer from dropping off from the side surface of the sealing portion.

Moreover, it is preferable that the uneven | corrugated | grooved part is formed in the said side surface of the said sealing part.
In this case, it is possible to effectively prevent the ceramic layer from falling off from the side surface of the sealing portion.

Moreover, it is preferable that the said ceramic layer has coat | covered the said heat radiating surface and the said side end surface in the said heat sink.
In this case, insulation between the electrodes of the semiconductor element can be easily ensured. In particular, when the heat sink is electrically connected to the electrodes of the semiconductor element, it is necessary to ensure the insulation, such as by forming an insulating layer on the heat sink surface or side end face of the heat sink. As described above, by forming the ceramic layer formed on the side surface of the sealing portion also on the heat radiating surface and the side end surface of the heat radiating plate, it is possible to improve the cooling performance and ensure the insulation at a time.

Moreover, it is preferable that the said heat sink comprises the corner | angular part between the said heat radiating surface and the said side end surface with a curved surface (Claim 6).
In this case, stress can be prevented from concentrating on the ceramic layer formed so as to cover the corners, and cracks can be effectively prevented from occurring.

Preferably, the ceramic layer is in contact with at least a part of the heat radiating plate, and the heat radiating plate is formed with a concavo-convex part at least at a part of the contact part with the ceramic layer. 7).
In this case, it is possible to effectively prevent the ceramic layer from falling off the heat sink.

Example 1
A power converter according to an embodiment of the present invention will be described with reference to FIGS.
As shown in FIGS. 1 and 2, a plurality of semiconductor modules 2 each including a semiconductor element 21 are stacked.

As shown in FIGS. 2 to 5, the semiconductor module 2 includes a semiconductor element 21, a heat radiating plate 22, a sealing portion 23, a wall portion 24, and a through coolant channel 41.
The heat sink 22 is thermally connected to the semiconductor element 21. The sealing part 23 seals the semiconductor element 21 and the heat dissipation plate 22 with the heat dissipation surface 221 of the heat dissipation plate 22 exposed. The wall portion 24 is formed around the sealing portion 23 in a direction orthogonal to the normal direction of the heat dissipation surface 221 and protrudes in the normal direction from the heat dissipation surface 221. The through coolant channel 41 is formed between the wall portion 24 and the sealing portion 23.

As shown in FIGS. 1 and 2, the plurality of semiconductor modules 2 are stacked in the normal direction of the heat radiation surface 221.
The semiconductor module 21 disposed at both ends in the stacking direction is provided with a lid 3 that covers the outer opening of the wall 24 in the stacking direction.
Between the adjacent semiconductor modules 2 and between the lid 3 and the semiconductor module 2 and inside the wall portion 24, there is a creeping refrigerant flow path 42 that communicates with the through refrigerant flow path 41 and extends along the heat radiation surface 221. Is formed.

One of the pair of lids 3 is provided with a refrigerant introduction pipe 51 and a refrigerant discharge pipe 52 that introduce and discharge the cooling medium W to and from the through refrigerant flow path 41 and the creeping refrigerant flow path 42.
At least a side surface 231 facing the through coolant channel 41 in the sealing portion 23 is covered with the ceramic layer 26. The ceramic layer 26 can be made of alumina, silicon nitride, or the like, for example.

In this example, the ceramic layer 26 also covers the heat dissipation surface 221 and the side end surface 223 of the heat dissipation plate 22.
The side surface 231 of the sealing part 23 is formed on the same surface as the side end surface 223 of the heat radiating plate 22. That is, the sealing part 23 does not cover the side end face 223 of the heat radiating plate 22 facing the through coolant channel 41. A ceramic layer 26 is formed on the side end surface 223 that is not covered with the sealing portion 23, similarly to the side portion 231 and the heat dissipation surface 221 of the sealing portion 23.

The power conversion apparatus 1 of this example is mounted on an electric vehicle, a hybrid vehicle, or the like, and converts power between a DC power source (battery 101) and an AC load (three-phase AC rotating electric machine 102) as shown in FIG. Is configured to do.
The semiconductor module 2 includes two semiconductor elements 21 as shown in FIG. Specifically, one of the semiconductor elements 21 incorporated in the semiconductor module 2 is a switching element made of IGBT (insulated gate bipolar transistor) or the like, and the other is an FWD (freewheel) connected in reverse parallel to the switching element. A diode) (see FIG. 6).

  As shown in FIG. 2, each semiconductor module 2 has a pair of metal heat radiating plates 22 arranged so as to sandwich the semiconductor element 21 from both sides. These heat radiating plates 22 are electrically and thermally connected to the semiconductor element 21 via solder 222. The two semiconductor elements 21 and the pair of heat radiating plates 22 are integrated and sealed by the resin sealing portion 23 while exposing the heat radiating surfaces 221 and the pair of side end surfaces 223 of each heat radiating plate 22. Yes.

Moreover, the resin-made wall part 24 is formed so that the sealing part 23 may be enclosed over the perimeter of the direction orthogonal to the normal line direction of the thermal radiation surface 221. FIG.
As shown in FIGS. 2 and 5, the wall portion 24 protrudes in the normal direction of the heat radiation surface 221 rather than the pair of heat radiation surfaces 221.

  As shown in FIGS. 3 to 5, a pair of main electrode terminals 251 protrude from the sealing portion 23 and the wall portion 24 in a direction orthogonal to the normal direction of the heat radiation surface 221, and a plurality of controls are provided in the opposite direction. The terminal 252 protrudes. A bus bar (not shown) for a controlled current is connected to the main electrode terminal 251, and the control terminal 252 is connected to a control circuit (not shown) for controlling the switching element (semiconductor element 21).

  Further, a direction (hereinafter referred to as “lateral direction”) orthogonal to the normal direction of the heat radiation surface 221 and orthogonal to the protruding direction of the main electrode terminal 251 and the control terminal 252 (hereinafter referred to as “height direction”). A pair of through coolant channels 41 are formed between the sealing portion 23 and the wall portion 24 in FIG. The through refrigerant flow path 41 also faces the side end face 223 of the heat radiating plate 22.

Moreover, as shown in FIG. 4, the sealing part 23 is formed in the both ends of the height direction of the heat sink 22. Further, as shown in FIG. 5, the ceramic layer 26 is also formed on the surface of the sealing portion 23 of this portion that faces the normal direction of the heat radiation surface 221, that is, the portion that faces the creeping refrigerant flow path 42.
Therefore, as shown in FIGS. 2 to 5, the ceramic layer 26 covers all the portions of the sealing portion 23 and the heat radiating plate 22 that face the refrigerant flow path 4 (the through refrigerant flow path 41 and the creeping refrigerant flow path 42). It is formed to cover.
The ceramic layer 26 can be formed on the sealing portion 23 and the heat sink 22 by, for example, thermal spraying.

  As shown in FIGS. 1 and 2, the power conversion device 1 is configured by stacking a plurality of semiconductor modules 2 in the normal direction of the heat radiation surface 221. 1 and FIG. 2 show diagrams in which three semiconductor modules 2 are stacked. However, the actual power conversion device 1 is formed by stacking a larger number of semiconductor modules 2, and the number of stacked layers is particularly limited. It is not something.

  The plurality of semiconductor modules 2 are connected to each other at the wall portion 24. And the resin-made cover parts 3 are attached to the both ends of the lamination direction in the power converter device 1 so that the opening part of the wall part 24 of the semiconductor module 2 may be plugged up. A seal member for ensuring watertightness can be interposed between the wall portions 24 of the adjacent semiconductor modules 2 or between the wall portion 24 and the lid portion 3 of the semiconductor module 2.

In one of the pair of lid portions 3, a refrigerant introduction pipe 51 for introducing the cooling medium W into the through refrigerant flow path 41 and the creeping refrigerant flow path 42 and a refrigerant discharge pipe 52 for discharging the cooling medium W are provided. And are attached. The refrigerant introduction pipe 51 and the refrigerant discharge pipe 52 are made of resin.
The lid 3, the refrigerant introduction pipe 51, and the refrigerant discharge pipe 52 can be made of other materials such as metal or ceramic.

  In this way, by stacking and connecting the plurality of semiconductor modules 2 and the pair of lid portions 3, as shown in FIG. 2, the refrigerant flow in which the through refrigerant flow path 41 and the creeping refrigerant flow path 42 are continuous is provided. The path 4 is formed in an inner space surrounded by the wall portion 24 and the lid portion 3. In this state, the pair of through coolant channels 41 provided in each semiconductor module 2 are connected in a state of being aligned on a straight line. The creeping refrigerant channel 42 is connected between the heat radiating surfaces 221 of the adjacent semiconductor modules 2 and between the semiconductor module 2 and the lid 3 so as to be orthogonal to the through refrigerant channel 41 and to be connected thereto. Formed.

Thereby, the cooling medium W introduced into the refrigerant flow path 4 from the refrigerant introduction pipe 51 passes through the through refrigerant flow path 41 as appropriate, and contacts the pair of heat radiation surfaces 221 in each semiconductor module 2. Pass through. Here, the cooling medium W that has exchanged heat with the semiconductor element 21 passes through the other through coolant channel 41 as appropriate, and is discharged from the coolant discharge pipe 52.
Examples of the cooling medium W include natural refrigerants such as water and ammonia, water mixed with ethylene glycol antifreeze, fluorocarbon refrigerants such as fluorinate, chlorofluorocarbon refrigerants such as HCFC123 and HFC134a, methanol, alcohol, and the like. An alcohol-based refrigerant, a ketone-based refrigerant such as acetone, or the like can be used.

  The power conversion apparatus 1 of this example constitutes the power conversion circuit shown in FIG. 6, and includes a converter 11 that boosts the voltage of the DC power supply (battery 101), and converts the boosted DC power into AC power to convert the AC load. And an inverter 12 for outputting to the (rotating electric machine 102). The inverter 12 and the converter 11 each have a function opposite to the above function, that is, a function of converting AC power into DC power and a function of stepping down DC power.

  The converter 11 includes a plurality of semiconductor modules 2, a reactor 111, and a filter capacitor 112. The inverter 12 includes a plurality of semiconductor modules 2 and a snubber capacitor 121. Further, a smoothing capacitor 131 and a discharge resistor 132 are wired between the converter 11 and the inverter 12.

Next, the function and effect of this example will be described.
In the power conversion device 1, at least the side surface 231 facing the through coolant channel 41 in the sealing portion 23 is covered with the ceramic layer 26. As a result, in the portion facing the through coolant channel 41, the sealing portion 23 made of a resin that tends to be low in thermal conductivity is reduced, and the ceramic layer 26 that is relatively high in thermal conductivity is arranged accordingly. Thus, the heat exchange efficiency between the cooling medium W flowing through the through coolant channel 41 and the semiconductor element 21 can be improved. As a result, the cooling performance of the semiconductor element 21 can be improved by utilizing heat transfer via the sealing portion 23.

Moreover, since the ceramic layer 26 arrange | positioned at the side surface 231 of the sealing part 23 has insulation, the fall of insulation by reducing the sealing part 23 and arrange | positioning the ceramic layer 26 can be prevented.
Further, as described above, since the cooling performance of the semiconductor element 21 can be improved, the density and the size thereof can be reduced. As a result, the power converter 1 can be downsized.

  Further, as shown in FIG. 2, since the side surface 231 of the sealing portion 23 is formed on the same surface as the side end surface 223 of the heat radiating plate 22, the volume of the sealing portion 23 is sufficiently reduced, Thus, the cooling efficiency of the semiconductor element 21 can be further improved.

  Further, since the ceramic layer 26 also covers the heat radiating surface 221 and the side end surface 223 of the heat radiating plate 22, the insulation between the electrodes of the semiconductor element 21 can be easily ensured. In particular, when the heat sink 22 is electrically connected to the electrode of the semiconductor element 21 as in this example, the insulation is formed by forming an insulating layer on the heat sink surface 221 or the side end face 223 of the heat sink 22. However, the ceramic layer 26 formed on the side surface 231 of the sealing portion 23 as described above is also formed on the heat radiating surface 221 and the side end surface 223 of the heat radiating plate 22, thereby improving the cooling performance. It is possible to ensure insulation at a time.

  As described above, according to this example, it is possible to provide a power conversion device capable of improving the cooling performance of a semiconductor element by utilizing heat transfer via a sealing portion.

(Example 2)
This example is an example of the power conversion device 1 in which the side surface 231 of the sealing portion 23 is formed inside the side end surface 223 of the heat radiating plate 22 as shown in FIG.
In other words, the pair of side surfaces 231 of the sealing portion 23 respectively facing the pair of through refrigerant channels 41 are formed on the inner side of the side end surface 223 of the heat radiating plate 22. In other words, the pair of heat sinks 22 in each semiconductor module 2 protrudes in the lateral direction from the sealing portion 23.
And a recessed part will be formed in the side of the side surface 231 of the sealing part 23 between a pair of heat sinks 22. This recess is filled with a part of the ceramic layer 26.
Others are the same as in the first embodiment.

In the case of this example, the volume of the sealing part 23 can be made smaller, and the cooling efficiency of the semiconductor element 21 via the sealing part 23 can be further improved. In addition, since the ceramic layer 26 formed on the side surface 231 of the sealing portion 23 is disposed inside the heat radiating plate 22, the falling off of the ceramic layer 26 from the side surface 231 of the sealing portion 23 is effectively prevented. can do.
In addition, the same effects as those of the first embodiment are obtained.

(Example 3)
In this example, as shown in FIG. 8, the concave and convex portions 224 are formed on the inner side surfaces of the pair of heat radiation plates 22 so as to face the concave portions formed between the pair of heat radiation plates 22 and the side surfaces 231 of the sealing portion 23. It is an example of the provided power converter device 1.
The ceramic layer 26 is formed so as to mesh with the uneven portion 224.
Others are the same as in the second embodiment.
In the case of this example, the ceramic layer 26 can be more effectively prevented from dropping than in the case of the second embodiment.
In addition, the same effects as those of the second embodiment are obtained.

Example 4
In this example, as shown in FIG. 9, an uneven portion 224 is provided on the heat radiating surface 221 of the heat radiating plate 22.
That is, the concave and convex portion 224 is formed by providing a large number of concave portions on the heat radiating surface 221 of the heat radiating plate 22. The ceramic layer 26 formed on the heat radiating surface 221 of the heat radiating plate 22 is formed so as to mesh with the concavo-convex portion 224.
Others are the same as in the second embodiment.
In the case of this example, it is possible to effectively prevent the ceramic layer 26 from falling off the heat radiation surface 221.
In addition, the same effects as those of the second embodiment are obtained.

(Example 5)
In this example, as shown in FIG. 10, an uneven portion 234 is provided on the side surface 231 of the sealing portion 23.
The ceramic layer 26 formed on the side surface 231 of the sealing portion 23 is formed so as to mesh with the concavo-convex portion 234.
Others are the same as in the second embodiment.
In the case of this example, it is possible to more effectively prevent the ceramic layer 26 from dropping from the sealing portion 23.
In addition, the same effects as those of the second embodiment are obtained.

(Example 6)
In this example, as shown in FIG. 11, an uneven portion 234 is provided on a surface parallel to the heat radiation surface 221 in the sealing portion 23 formed on both sides in the height direction of the heat radiation plate 22.
The ceramic layer 26 covering the sealing portion 23 is formed so as to mesh with the concavo-convex portion 234.
Others are the same as in the first embodiment.
In the case of this example, it is possible to more effectively prevent the ceramic layer 26 from dropping from the sealing portion 23.
In addition, the same effects as those of the first embodiment are obtained.

(Example 7)
This example is an example of the power conversion device 1 in which the corner between the heat radiating surface 221 and the side end surface 223 of the heat radiating plate 22 is configured by a curved surface 225 as shown in FIG.
The curved surface 225 is preferably an arc surface having a radius of curvature equal to or less than half of the thickness of the heat radiating plate 22, and is preferably an arc surface having a radius of curvature of about 0.5 to 2.0 mm.
Others are the same as in the fifth embodiment.

In the case of this example, stress can be prevented from concentrating on the ceramic layer 26 formed so as to cover the corner (curved surface 225), and cracks can be effectively prevented from occurring.
In addition, the same effects as those of the fifth embodiment are obtained.
In addition to the corners between the heat radiation surface 221 and the side end surfaces 223 of the heat radiation plate 22, the corners of the heat radiation plate 22 and the sealing portion 23 formed in a convex shape toward the ceramic layer 26 also. As in Example 7, it is preferable to use a curved surface.

The present invention can take various modes other than the above-described embodiments.
That is, as the power conversion device according to the present invention, for example, a mode in which a plurality of the above embodiments are appropriately combined may be employed.

DESCRIPTION OF SYMBOLS 1 Power converter 2 Semiconductor module 21 Semiconductor element 22 Heat sink 221 Heat sink surface 23 Sealing part 231 Side face 24 Wall part 26 Ceramic layer 3 Lid part 4 Refrigerant flow path 41 Through refrigerant flow path 42 Creeping refrigerant flow path

Claims (7)

A power conversion device configured by stacking a plurality of semiconductor modules each including a semiconductor element,
The semiconductor module includes the semiconductor element, a heat sink thermally connected to the semiconductor element, and a resin that seals the semiconductor element and the heat sink with the heat dissipation surface of the heat sink exposed. A sealing portion, a wall portion formed around the sealing portion in a direction orthogonal to the normal direction of the heat dissipation surface and projecting in the normal direction from the heat dissipation surface; the wall portion and the seal A through coolant channel formed between the stopper and the stopper,
The plurality of semiconductor modules are stacked in the normal direction of the heat dissipation surface,
The semiconductor module disposed at both ends in the stacking direction is provided with a lid that covers the outer opening of the wall in the stacking direction,
Between the adjacent semiconductor modules and between the lid portion and the semiconductor module and inside the wall portion, a creeping refrigerant flow path is formed along the heat dissipation surface and in communication with the through refrigerant flow path. Has been
And at least the side surface which faces the said penetration refrigerant flow path in the said sealing part is coat | covered with the ceramic layer, The power converter device characterized by the above-mentioned.   2. The power conversion device according to claim 1, wherein the side surface of the sealing portion is formed on the same surface as the side end surface of the heat sink or on the inner side.   The power converter according to claim 2, wherein the side surface of the sealing portion is formed on an inner side than a side end surface of the heat radiating plate.   The power converter according to any one of claims 1 to 3, wherein an uneven part is formed on the side surface of the sealing part.   5. The power conversion device according to claim 1, wherein the ceramic layer also covers the heat radiating surface and the side end surfaces of the heat radiating plate. 6.   6. The power conversion device according to claim 5, wherein the heat radiating plate is configured such that a corner portion between the heat radiating surface and the side end surface is a curved surface.   In the power converter according to any one of claims 1 to 6, the ceramic layer is in contact with at least a part of the heat sink, and the heat sink has at least a contact portion with the ceramic layer. A power converter characterized by forming an uneven part in a part.

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