JP2011524636A - シリコン太陽電池の形成方法 - Google Patents

シリコン太陽電池の形成方法 Download PDF

Info

Publication number
JP2011524636A
JP2011524636A JP2011513659A JP2011513659A JP2011524636A JP 2011524636 A JP2011524636 A JP 2011524636A JP 2011513659 A JP2011513659 A JP 2011513659A JP 2011513659 A JP2011513659 A JP 2011513659A JP 2011524636 A JP2011524636 A JP 2011524636A
Authority
JP
Japan
Prior art keywords
aluminum paste
aluminum
magnesium
firing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011513659A
Other languages
English (en)
Japanese (ja)
Inventor
ジオヴァンナ ラウディジオ
ミケスカ カート リチャード
プリンス アリステア
ジョン シェフィールド ヤング リチャード
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2011524636A publication Critical patent/JP2011524636A/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
JP2011513659A 2008-06-11 2009-06-10 シリコン太陽電池の形成方法 Withdrawn JP2011524636A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6057308P 2008-06-11 2008-06-11
US61/060,573 2008-06-11
PCT/US2009/046893 WO2009152238A2 (fr) 2008-06-11 2009-06-10 Procédé de fabrication d'une cellule solaire au silicium

Publications (1)

Publication Number Publication Date
JP2011524636A true JP2011524636A (ja) 2011-09-01

Family

ID=41417384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011513659A Withdrawn JP2011524636A (ja) 2008-06-11 2009-06-10 シリコン太陽電池の形成方法

Country Status (6)

Country Link
EP (1) EP2283524A2 (fr)
JP (1) JP2011524636A (fr)
KR (1) KR20110028347A (fr)
CN (1) CN102037573A (fr)
TW (1) TW201007967A (fr)
WO (1) WO2009152238A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050349A (ja) * 2013-09-02 2015-03-16 株式会社ノリタケカンパニーリミテド 太陽電池素子およびその製造方法並びにファイヤースルー用アルミニウムペースト

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101225909B1 (ko) 2008-08-07 2013-01-24 교토 에렉스 가부시키가이샤 태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법
KR101198930B1 (ko) 2010-02-05 2012-11-07 성균관대학교산학협력단 질화규소 반사방지막의 제조 방법 및 이를 이용한 실리콘 태양전지
US8535971B2 (en) 2010-02-12 2013-09-17 Heraeus Precious Metals North America Conshohocken Llc Method for applying full back surface field and silver busbar to solar cell
TWI455329B (zh) * 2010-10-26 2014-10-01 Au Optronics Corp 太陽能電池及其製作方法
US20120152341A1 (en) * 2010-12-16 2012-06-21 E.I. Du Pont De Nemours And Company Low bow aluminum paste with an alkaline earth metal salt additive for solar cells
US20120152343A1 (en) * 2010-12-16 2012-06-21 E. I. Du Pont De Nemours And Company Aluminum paste compositions comprising siloxanes and their use in manufacturing solar cells
US20120152344A1 (en) * 2010-12-16 2012-06-21 E.I. Du Pont De Nemours And Company Aluminum paste compositions comprising calcium oxide and their use in manufacturing solar cells
US20120152342A1 (en) * 2010-12-16 2012-06-21 E.I. Du Pont De Nemours And Company Aluminum paste compositions comprising metal phosphates and their use in manufacturing solar cells
US20120255605A1 (en) * 2011-04-06 2012-10-11 E. I. Du Pont De Nemours And Company Method of manufacturing solar cell electrode
RU2690091C1 (ru) * 2018-11-08 2019-05-30 Общество с ограниченной ответственностью "Научное Предприятие Монокристалл Пасты" Алюминиевая паста для изготовления тыльного контакта кремниевых солнечных элементов c тыльной диэлектрической пассивацией

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4272405B2 (ja) * 2002-10-29 2009-06-03 京セラ株式会社 太陽電池素子の製造方法
US7718092B2 (en) * 2005-10-11 2010-05-18 E.I. Du Pont De Nemours And Company Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
US8309844B2 (en) * 2007-08-29 2012-11-13 Ferro Corporation Thick film pastes for fire through applications in solar cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050349A (ja) * 2013-09-02 2015-03-16 株式会社ノリタケカンパニーリミテド 太陽電池素子およびその製造方法並びにファイヤースルー用アルミニウムペースト

Also Published As

Publication number Publication date
KR20110028347A (ko) 2011-03-17
TW201007967A (en) 2010-02-16
WO2009152238A3 (fr) 2010-09-10
WO2009152238A2 (fr) 2009-12-17
CN102037573A (zh) 2011-04-27
EP2283524A2 (fr) 2011-02-16

Similar Documents

Publication Publication Date Title
JP2011521401A (ja) アルミニウムペーストおよびシリコン太陽電池の製造におけるその使用
KR101176296B1 (ko) 알루미늄 페이스트 및 규소 태양 전지 제조시의 그 용도
JP2011524636A (ja) シリコン太陽電池の形成方法
US8398896B2 (en) Aluminum pastes and use thereof in the production of silicon solar cells
KR101322142B1 (ko) 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법
JP2006351530A (ja) アルミニウム厚膜組成物、電極、半導体デバイスおよびそれらを作製する方法
JP2007059380A (ja) アルミニウム厚膜組成物、電極、半導体デバイスおよびそれらを作製する方法
EP2433304A1 (fr) Procédé de réalisation d'une électrode de grille sur la face avant d'une plaquette de silicium
US20130056060A1 (en) Process for the production of lfc-perc silicon solar cells
KR101322149B1 (ko) 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법
EP2417608A1 (fr) Pâtes métalliques et leur utilisation dans le cadre de la production de piles photovoltaïques à base de silicium
US8017428B2 (en) Process of forming a silicon solar cell
US20130160835A1 (en) Back-side electrode of p-type solar cell and method for forming the same
US20140190560A1 (en) Back-side electrode of p-type solar cell
US20130160834A1 (en) Back-side electrode of p-type solar cell, and method for forming the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120611

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20130405