JP2011256379A - Device manufacturing method - Google Patents
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Abstract
Description
本発明は、デバイス作製法に係り、とくにＳｉ−Ｏ−Ｓｉ結合を含む化合物基体上に、マスクを配置することにより、従来困難とされてきたＳｉ−Ｏ−Ｓｉ結合を含む化合物基体上への平滑な膜の形成を位置選択的に行うことが可能なデバイス作製法に関する。 The present invention relates to a device fabrication method, and in particular, by placing a mask on a compound substrate containing Si—O—Si bonds, it is possible to apply the method to a compound substrate containing Si—O—Si bonds, which has been conventionally difficult. The present invention relates to a device manufacturing method capable of selectively forming a smooth film.
Ｓｉ−Ｏ−Ｓｉ結合を含む化合物上へ膜形成を行うと、形成膜表面にはテクスチャ構造やマイクロクラックが形成される場合が多い。これは、形成膜とＳｉ−Ｏ−Ｓｉ結合を含む化合物との熱膨張係数の差によるものと理解されている。このことが、優れた特性を有するＳｉ−Ｏ−Ｓｉ結合を含む化合物のデバイスとしての使用を制限していた。 When a film is formed on a compound containing a Si—O—Si bond, a texture structure or a microcrack is often formed on the surface of the formed film. This is understood to be due to a difference in thermal expansion coefficient between the formed film and the compound containing Si—O—Si bond. This has limited the use of compounds containing Si—O—Si bonds with excellent properties as devices.
Ｓｉ−Ｏ−Ｓｉ結合を含む化合物等の基体へ、極めて平滑な膜を、薄膜から厚膜まで広い膜厚範囲で、マイクロ／ナノ領域に位置選択的に形成することにより、Ｓｉ−Ｏ−Ｓｉ結合を含む化合物等を基礎とした新規マイクロ／ナノデバイスの作製法の確立を課題とする。 By forming a very smooth film on a substrate such as a compound containing a Si—O—Si bond in a micro / nano region in a wide film thickness range from a thin film to a thick film, Si—O—Si The objective is to establish a novel micro / nano device fabrication method based on compounds containing bonds.
そこで、本発明は、上記の点に鑑み、Ｓｉ−Ｏ−Ｓｉ結合を含む化合物等の基体に対して極めて平滑な膜を、薄膜から厚膜まで広い膜厚範囲で、マイクロ／ナノ領域に位置選択的に形成可能とした基体への膜形成法を用いた、マイクロ／ナノデバイスの作製のための基盤技術となるデバイス作製法を提供することを目的とする。 Therefore, in view of the above points, the present invention provides a very smooth film on a substrate such as a compound containing a Si—O—Si bond in a micro / nano region in a wide film thickness range from a thin film to a thick film. An object of the present invention is to provide a device fabrication method that is a fundamental technology for fabrication of micro / nano devices using a film formation method on a substrate that can be selectively formed.
本発明のその他の目的や新規な特徴は後述の実施の形態において明らかにする。 Other objects and novel features of the present invention will be clarified in embodiments described later.
上記目的を達成するために、本発明のある態様に係るデバイス作製法は、予め改質が施された改質部分を有する基体上に、マスクを密着配置して、前記改質部分を覆うように、気相中で膜を位置選択的に形成する工程と、その後、前記改質部分のみを化学エッチングする工程とを備えることを特徴としている。 In order to achieve the above object, in a device manufacturing method according to an aspect of the present invention, a mask is closely disposed on a substrate having a modified portion that has been modified in advance so as to cover the modified portion. And a step of selectively forming a film in a gas phase, and then a step of chemically etching only the modified portion.
前記態様において、前記膜を位置選択的に形成する工程が、前記基体をターゲットに接近させ、レーザーアブレーションを用いて前記基体上に前記膜を形成するものであるとよい。 In the above aspect, the step of selectively forming the film may be a method in which the substrate is brought close to a target and the film is formed on the substrate using laser ablation.
前記態様において、前記マスクは多数の孔が形成されたメッシュ構造であるとよい。 In the above aspect, the mask may have a mesh structure in which a large number of holes are formed.
前記態様において、前記孔の開口サイズは２５０μｍ以下であるとよい。 In the above aspect, the opening size of the hole is preferably 250 μm or less.
前記態様において、前記基体がＳｉ−Ｏ−Ｓｉ結合を含む化合物基体であるとよい。 In the above aspect, the substrate may be a compound substrate including a Si—O—Si bond.
前記態様において、前記膜を位置選択的に形成する工程では、前記基体の湾曲に対してクラックの発生しない膜を形成するとよい。 In the above aspect, in the step of selectively forming the film, it is preferable to form a film in which no crack is generated with respect to the curvature of the base.
本発明によれば、Ｓｉ−Ｏ−Ｓｉ結合を含む化合物等の基体へ、極めて平滑な膜を、薄膜から厚膜まで広い膜厚範囲で、基体面のマイクロ／ナノ領域に位置選択的に形成することにより、Ｓｉ−Ｏ−Ｓｉ結合を含む化合物等を基礎とした新規マイクロ／ナノデバイスの作製法を確立でき、エレクトロニクス、オプトエレクトロニクス、フォトニクスあるいはバイオ／メディカル分野でのデバイス作製の基盤技術として利用可能であるなど多機能性マイクロ/ナノデバイス作製のための必要不可欠な技術となる。また本発明は、これら電気・電子工学の分野にとどまらず、今後マイクロ・ナノマシーニング技術を利用して発展するデバイス作製の分野に多大に利用可能である。 According to the present invention, an extremely smooth film is selectively formed in a micro / nano region of a substrate surface in a wide film thickness range from a thin film to a thick film on a substrate such as a compound containing a Si—O—Si bond. By doing so, we can establish new micro / nano device fabrication methods based on compounds containing Si-O-Si bonds, etc., and use them as basic technologies for device fabrication in electronics, optoelectronics, photonics or bio / medical fields It becomes an indispensable technology for the production of multifunctional micro / nano devices. The present invention is not limited to the fields of electrical and electronic engineering, but can be used greatly in the field of device fabrication that will be developed using micro / nanomachining technology.
以下、本発明を実施するための最良の形態として、デバイス作製法の実施の形態を図面に従って説明する。 Hereinafter, as the best mode for carrying out the present invention, an embodiment of a device manufacturing method will be described with reference to the drawings.
図１及び図２は本発明で利用する基体への膜形成法、及び本発明に係るデバイス作製法の実施の形態を示す。図１は実施の形態で用いる実験装置の概略構成であり、チャンバー１内には、マスク３を配置した基体２（例えば基板）が固定支持されており、チャンバー１内部は真空ポンプ（ロータリーポンプ、ターボ分子ポンプ）で真空排気可能となっている。 1 and 2 show an embodiment of a film forming method on a substrate used in the present invention and a device manufacturing method according to the present invention. FIG. 1 shows a schematic configuration of an experimental apparatus used in the embodiment. A substrate 2 (for example, a substrate) on which a mask 3 is arranged is fixedly supported in a chamber 1, and a vacuum pump (rotary pump, It can be evacuated by a turbo molecular pump.
また、チャンバー１内部の基体２に対向する位置に凝固ペンタノール（Ｃ５Ｈ１１ＯＨ）のターゲット５を形成するためにチャンバー１には液体窒素で冷却されるリザーバー１０及び導入管１１が設けられている。ターゲット５の形成は、チャンバー内を真空排気するとともに液体窒素によりリザーバーを冷却しておき、導入管１１よりチャンバー内に導入したペンタノールを真空中でガス状にして、リザーバー１０の底面に吹き付けることにより行うことができる。 In addition, in order to form a target 5 of solidified pentanol (C 5 H 11 OH) at a position facing the substrate 2 inside the chamber 1, the chamber 1 is provided with a reservoir 10 cooled by liquid nitrogen and an introduction pipe 11. ing. In forming the target 5, the chamber is evacuated and the reservoir is cooled with liquid nitrogen, and the pentanol introduced into the chamber from the introduction tube 11 is made gaseous in vacuum and sprayed to the bottom surface of the reservoir 10. Can be performed.
レーザーアブレーション膜形成（pulsed laser deposition；ＰＬＤ）法による成膜を行うためのＰＬＤ用光源２０のレーザー光は集光用光学系２１、入射窓２２を通してターゲット５の表面に、集光、照射されるようになっている。 Laser light from a PLD light source 20 for film formation by a pulsed laser deposition (PLD) method is condensed and irradiated onto the surface of the target 5 through a condensing optical system 21 and an incident window 22. It is like that.
前記基体２のターゲット５に対向する側には、図２（Ａ）のように、多数の小孔３ａが開口したマスク３を密着乃至ごく近接させて配置している。マスク３としては例えば金属製のメッシュマスクを用いることができる。前記小孔３ａの形状は丸、三角、四角、その他の多角形等のいずれでもよい。 On the side of the substrate 2 facing the target 5, as shown in FIG. 2A, a mask 3 having a large number of small holes 3a is disposed in close contact or very close to each other. As the mask 3, for example, a metal mesh mask can be used. The shape of the small hole 3a may be any of a circle, a triangle, a square, and other polygons.
上記装置を用い、まずロータリーポンプでチャンバー１内を４Ｐａ以下まで真空排気し、その後、液体窒素によりリザーバー１０を冷却する。次に、ペンタノールを真空中でガス状にし、冷却したリザーバー底面に吹き付けることにより、厚さ数ｍｍ程度の凝固ペンタノールからなるターゲット５形成する。ターゲット５の形成後、ターボ分子ポンプによりチャンバー１内を３×１０−３Ｐａ以下まで真空排気する。 Using the above apparatus, the chamber 1 is first evacuated to 4 Pa or less with a rotary pump, and then the reservoir 10 is cooled with liquid nitrogen. Next, the target 5 made of solidified pentanol having a thickness of several millimeters is formed by making pentanol into a gaseous state in a vacuum and spraying it on the bottom of the cooled reservoir. After the formation of the target 5, the inside of the chamber 1 is evacuated to 3 × 10 −3 Pa or less by a turbo molecular pump.
この状態において、ＰＬＤ用光源２０からのレーザー光を集光用光学系２１を介し、入射窓２２を通してターゲット５の表面に、集光、照射する。このレーザー光の照射によって、レーザーアブレーションによりターゲット５に対向している基体２上にダイヤモンド状炭素（diamond-like carbon;ＤＬＣ）膜６が形成される。このとき、基体２のターゲット５に対向する側に多数の小孔が開口した金属メッシュ等のマスク３を密着乃至ごく近接させて配置し、開口サイズを適正範囲の値にすることで、平滑膜の形成が従来困難とされてきたＳｉ−Ｏ−Ｓｉ結合を含む化合物で基体２が形成されている場合であっても、図２（Ｂ）のように、マスク３を外して基体２側に付着して残ったＤＬＣ膜６は、１ｍｍ未満の狭い領域（マイクロ／ナノ領域）ではあるが極めて平滑なＤＬＣ膜となることが本発明者により見いだされた。詳細な考察は後述の実施例において述べる。 In this state, the laser light from the PLD light source 20 is condensed and irradiated onto the surface of the target 5 through the incident window 22 via the condensing optical system 21. By this laser light irradiation, a diamond-like carbon (DLC) film 6 is formed on the substrate 2 facing the target 5 by laser ablation. At this time, a mask 3 such as a metal mesh having a large number of small holes opened on the side of the substrate 2 facing the target 5 is disposed in close contact or in close proximity, and the opening size is set to a value within an appropriate range. Even when the substrate 2 is formed of a compound containing a Si—O—Si bond, which has conventionally been difficult to form, the mask 3 is removed and the substrate 2 side is removed as shown in FIG. The inventor has found that the DLC film 6 remaining after adhering becomes a very smooth DLC film although it is a narrow region (micro / nano region) of less than 1 mm. Detailed consideration will be described in the examples below.
また、基体２上に配置したマスク３のパターンに応じて位置選択的にＤＬＣ膜６を形成することができる。つまり、マスク３に開口の無い部分を設けることで、開口の無い部分にはＤＬＣ膜が成膜されないようにすることが可能である。また、開口の形状に合致した膜パターンを得ることができる。 Further, the DLC film 6 can be selectively formed according to the pattern of the mask 3 disposed on the substrate 2. That is, it is possible to prevent the DLC film from being formed on the portion without the opening by providing the mask 3 with the portion without the opening. In addition, a film pattern that matches the shape of the opening can be obtained.
さらに、基体２をターゲット５に接近させた状態で膜形成を行うことにより、数１０μｍの厚膜を形成可能である。 Furthermore, a thick film of several tens of μm can be formed by performing film formation with the substrate 2 being close to the target 5.
図２（Ｂ）のように、マイクロ／ナノ領域の極めて平滑なＤＬＣ膜６を多数形成した基体２を湾曲させた場合であっても、平滑なＤＬＣ膜６にはクラックの発生は見られない。従って、クラックの発生しない膜を形成可能なデバイス作製法を実現できる。 As shown in FIG. 2B, even when the substrate 2 on which a large number of extremely smooth DLC films 6 in the micro / nano region are formed is curved, no cracks are observed in the smooth DLC film 6. . Therefore, it is possible to realize a device manufacturing method capable of forming a film free from cracks.
さらに、図３は本発明の実施の形態であって、マイクロトンネル構造を基体上に形成するデバイス作製法を示す。この場合、図３（Ａ）のように、Ｓｉ−Ｏ−Ｓｉ結合を含む化合物等の基体２に予め改質が施された部分、つまり改質部分２ａを形成しておき、その後、上述の図１及び図２で説明した基体への膜形成法により、図３（Ｂ）のように改質部分２ａを有する基体２上に改質部分２ａを覆うように膜６を形成し、その後、図３（Ｃ）のように改質部分２ａのみを化学エッチングで除去することにより、基体２及び膜６からなるマイクロトンネル構造が得られる。 Further, FIG. 3 shows an embodiment of the present invention and shows a device manufacturing method for forming a microtunnel structure on a substrate. In this case, as shown in FIG. 3A, a portion that has been modified in advance, that is, a modified portion 2a, is formed on the substrate 2 such as a compound containing a Si—O—Si bond. The film 6 is formed on the substrate 2 having the modified portion 2a as shown in FIG. 3B so as to cover the modified portion 2a by the film forming method on the substrate described in FIGS. By removing only the modified portion 2a by chemical etching as shown in FIG. 3C, a microtunnel structure including the base 2 and the film 6 is obtained.
この実施の形態によれば、次の通りの効果を得ることができる。 According to this embodiment, the following effects can be obtained.
(1) Ｓｉ−Ｏ−Ｓｉ結合を含む化合物基体２上に、マスク３を配置することにより、従来困難とされてきたＳｉ−Ｏ−Ｓｉ結合を含む化合物基体上への平滑な膜の形成を位置選択的に行うことが可能となる。 (1) By arranging the mask 3 on the compound substrate 2 containing Si—O—Si bonds, it is possible to form a smooth film on the compound substrate containing Si—O—Si bonds, which has heretofore been difficult. It is possible to perform the position selective.
(2) マイクロ／ナノ領域への膜形成故、レーザーアブレーション膜形成法においては、基体２をターゲット５に接近させることができ、薄膜のみならず厚膜も形成可能となる。 (2) Since the film is formed in the micro / nano region, in the laser ablation film forming method, the substrate 2 can be brought close to the target 5 and a thick film as well as a thin film can be formed.
(3) 基体２の湾曲に対してクラックの発生しない膜を形成可能である。 (3) It is possible to form a film in which cracks do not occur with respect to the curvature of the substrate 2.
(4) 基体２及び膜６からなるマイクロトンネル構造を得ることができる。 (4) A microtunnel structure comprising the substrate 2 and the film 6 can be obtained.
以下、本発明に係るデバイス作製法を実施例で詳述する。 Hereinafter, the device manufacturing method according to the present invention will be described in detail in Examples.
図１の実験装置の概略図において、ＰＬＤ用光源２０として、波長７９０ｎｍのモードロックＴｉ:sapphireレーザー光を再生増幅した、パルス幅１３０フェムト秒（ｆｓ）のｆｓレーザー光を用いた。実験手順として、まずロータリーポンプでチャンバー１内を４Ｐａ以下まで真空排気し、その後、液体窒素によりリザーバー１０を冷却した。次に、ペンタノールを真空中でガス状にし、冷却したリザーバー底面に吹き付けることにより、厚さ約３ｍｍの凝固ペンタノールをターゲット５として形成した。ターゲット形成後、ターボ分子ポンプによりチャンバー内を３×１０−３Ｐａ以下まで真空排気した。前記ｆｓレーザー光は、焦点距離１７０ｍｍの集光用光学系２１としての石英レンズを介し、石英製の入射窓２２を通してターゲット５の表面に集光させた。基体２には、厚さ２ｍｍのシリコーンゴムを用いた。また、比較のためにＳｉ基板（ウエハ）も用いている。シリコーンゴム基体２上には、予め金属製のメッシュマスク３を配置した。 In the schematic diagram of the experimental apparatus in FIG. 1, fs laser light having a pulse width of 130 femtoseconds (fs) obtained by regenerating and amplifying mode-locked Ti: sapphire laser light having a wavelength of 790 nm was used as the light source 20 for PLD. As an experimental procedure, first, the inside of the chamber 1 was evacuated to 4 Pa or less with a rotary pump, and then the reservoir 10 was cooled with liquid nitrogen. Next, solidified pentanol having a thickness of about 3 mm was formed as the target 5 by making pentanol into a gaseous state in a vacuum and spraying the bottom surface of the cooled reservoir. After forming the target, the inside of the chamber was evacuated to 3 × 10 −3 Pa or less by a turbo molecular pump. The fs laser light was condensed on the surface of the target 5 through a quartz incident window 22 through a quartz lens as a condensing optical system 21 having a focal length of 170 mm. For the substrate 2, silicone rubber having a thickness of 2 mm was used. For comparison, a Si substrate (wafer) is also used. A metal mesh mask 3 was previously placed on the silicone rubber substrate 2.
図４は、シリコーンゴム基体及びＳｉウエハ上にＰＬＤ法により形成したＤＬＣ膜の原子間力顕微鏡（atomic force microscope；ＡＦＭ）像を示している。ＡＦＭ観察したこれら試料は、マスクは使用せずに成膜された場合である。成膜条件は、レーザー光のパルスエネルギー０．８ｍＪ、エネルギー密度１０Ｊ／ｃｍ２、パルス繰り返し周波数５００Ｈｚ、照射時間０分、３０分、６０分をそれぞれ示し、基体−ターゲット間距離２０ｍｍであった。Ｓｉウエハ上では平滑なＤＬＣ膜が形成しているのに対し、シリコーンゴム基体上では成膜時間とともにテクスチャ構造が形成することがわかった。 FIG. 4 shows an atomic force microscope (AFM) image of the DLC film formed on the silicone rubber substrate and the Si wafer by the PLD method. These samples observed by AFM are when the film is formed without using a mask. The film formation conditions showed a laser beam pulse energy of 0.8 mJ, an energy density of 10 J / cm 2 , a pulse repetition frequency of 500 Hz, an irradiation time of 0 minutes, 30 minutes, and 60 minutes, respectively, and a substrate-target distance of 20 mm. It was found that a smooth DLC film was formed on the Si wafer, whereas a texture structure was formed with the film formation time on the silicone rubber substrate.
次に、シリコーンゴム基体上に金属製メッシュマスクを配置した場合を示す。図５は、マスクの開口サイズを変化させたときの、形成膜の表面粗さの測定結果である。マスクの開口サイズが小さくなっていくと、表面粗さは顕著に低減することが判明した。開口サイズ｛メッシュの小孔の径（四角孔の場合には一辺の長さ、五角形以上では近似円の径と考えてよい）｝は５００μｍ以下で表面粗さを低減する効果が見られるが、さらに開口サイズを小さくして行くことで、低減効果が増す。例えば、開口サイズ１０μｍのとき、５０ｎｍ以下の表面粗さの平滑な膜が形成できた。 Next, a case where a metal mesh mask is disposed on a silicone rubber substrate will be described. FIG. 5 shows measurement results of the surface roughness of the formed film when the opening size of the mask is changed. It has been found that the surface roughness is remarkably reduced as the mask opening size is reduced. Although the opening size {the diameter of the small holes of the mesh (the length of one side in the case of a square hole, may be considered as the diameter of an approximate circle in the case of a pentagon)} is an effect of reducing the surface roughness at 500 μm or less Further, the reduction effect is increased by reducing the opening size. For example, when the opening size was 10 μm, a smooth film with a surface roughness of 50 nm or less could be formed.
図６は、基体−ターゲット間距離を変化させたときの、形成膜の膜厚を測定した結果である。成膜条件は、レーザー光のパルスエネルギー０．３８ｍＪ、エネルギー密度５Ｊ／ｃｍ２、パルス繰り返し周波数１ｋＨｚであった。また、シリコーンゴム基体上に配置したマスクの開口サイズは１２５μｍ一定とした。例えば、基体−ターゲット間距離５ｍｍでは、３０μｍの膜厚を有するＤＬＣ膜が容易に得られることがわかった。このようにマイクロ領域への膜形成故、基体−ターゲット間距離を極近傍まで接近させることができ、これまで困難とされてきたＤＬＣ膜の厚膜化も可能となることが明らかとなった。 FIG. 6 shows the results of measuring the film thickness of the formed film when the distance between the substrate and the target is changed. The film forming conditions were a laser beam pulse energy of 0.38 mJ, an energy density of 5 J / cm 2 , and a pulse repetition frequency of 1 kHz. Further, the opening size of the mask arranged on the silicone rubber substrate was fixed to 125 μm. For example, it was found that a DLC film having a film thickness of 30 μm can be easily obtained at a substrate-target distance of 5 mm. As described above, since the film is formed in the micro region, the distance between the substrate and the target can be brought close to the very vicinity, and it has been clarified that the DLC film, which has been considered difficult so far, can be thickened.
図７は、これまでの実験結果を基に、シリコーンゴム基体上に平滑なＤＬＣ膜を、位置選択的に形成した例を示す。図７は光学顕微鏡によるものである。このときの成膜条件は、レーザー光のパルスエネルギー０．４ｍＪ、エネルギー密度５Ｊ／ｃｍ２、パルス繰り返し周波数１ｋＨｚ、基体−ターゲット間距離５ｍｍであった。マスクの開口サイズは、図７（Ａ）の場合２５０μｍ径、図７（Ｂ）は３０μｍ四方であった。また、レーザー光照射時間はそれぞれ３０分、６０分であった。これら試料は、基体を湾曲させても、膜にクラックが発生することはなかった。 FIG. 7 shows an example in which a smooth DLC film is selectively formed on a silicone rubber substrate on the basis of the experimental results so far. FIG. 7 shows an optical microscope. The film formation conditions at this time were a pulse energy of laser light of 0.4 mJ, an energy density of 5 J / cm 2 , a pulse repetition frequency of 1 kHz, and a substrate-target distance of 5 mm. The opening size of the mask was 250 μm in the case of FIG. 7A, and 30 μm square in FIG. 7B. The laser beam irradiation time was 30 minutes and 60 minutes, respectively. In these samples, even when the substrate was bent, no cracks were generated in the film.
図３で説明した実施の形態について、予め改質が施されたシリコーンゴムを基体として用い、その基体上に、ＰＬＤ法によりＤＬＣ膜を形成し、その後改質部分のみを化学エッチングするデバイス作製法について実験を行った。具体的には、図８のように、波長１５７ｎｍのＦ２レーザー光を、シリコーンゴム基体表面に１０μｍ線幅で線状に露光し、シリカガラス（ＳｉＯ２）改質層（厚さ５μｍ）を形成した。露光条件は、レーザー光のエネルギー密度１０ｍＪ／ｃｍ２、繰り返し周波数１０Ｈｚ、照射時間３０分であった。その後、ＰＬＤ法により線幅１００μｍのＤＬＣ膜を形成した。作製した試料を、１重量％のＨＦ水溶液に浸漬し、シリカガラス改質層のみを化学エッチングした。その結果、シリコーンゴム基体上にＤＬＣ膜のマイクロトンネル構造が作製できた。 In the embodiment described with reference to FIG. 3, a device manufacturing method in which a modified silicone rubber is used as a substrate, a DLC film is formed on the substrate by the PLD method, and then only the modified portion is chemically etched. The experiment was conducted. Specifically, as shown in FIG. 8, F 2 laser light having a wavelength of 157 nm is linearly exposed on the surface of the silicone rubber substrate with a line width of 10 μm, and a silica glass (SiO 2 ) modified layer (thickness 5 μm) is formed. Formed. The exposure conditions were an energy density of laser light of 10 mJ / cm 2 , a repetition frequency of 10 Hz, and an irradiation time of 30 minutes. Thereafter, a DLC film having a line width of 100 μm was formed by the PLD method. The prepared sample was immersed in a 1% by weight HF aqueous solution, and only the silica glass modified layer was chemically etched. As a result, a DLC film microtunnel structure could be fabricated on the silicone rubber substrate.
上記実施例で述べたように、Ｓｉ−Ｏ−Ｓｉ結合を含む化合物基体上に、所定開口サイズのマスクを配置することにより、従来困難とされてきたＳｉ−Ｏ−Ｓｉ結合を含む化合物基体上への平滑な膜の形成を位置選択的に行うことが可能となる。また、マイクロ／ナノ領域への膜形成故、レーザーアブレーション膜形成法においては、前記基体をターゲットに接近させることができ、薄膜のみならず厚膜も形成可能となる。さらに、予め改質が施されたＳｉ−Ｏ−Ｓｉ結合を含む化合物基体上に、位置選択的に膜を形成し、その後改質部分のみを化学エッチングすることにより、Ｓｉ−Ｏ−Ｓｉ結合を含む化合物を基礎とした新規マイクロ／ナノデバイスの開発も可能となる。この結果は、エレクトロニクス、オプトエレクトロニクス、フォトニクスあるいはバイオ／メディカル分野でのデバイス作製に適用可能になるなど、その用途は電気、電子のみならずあらゆる分野で有用である。 As described in the above embodiments, by placing a mask having a predetermined opening size on a compound substrate containing Si—O—Si bonds, the compound substrate containing Si—O—Si bonds, which has been conventionally difficult, is disposed. It is possible to selectively form a smooth film on the substrate. In addition, since the film is formed in the micro / nano region, in the laser ablation film forming method, the substrate can be brought close to the target, and a thick film as well as a thin film can be formed. Further, a Si-O-Si bond is formed by selectively forming a film on a compound substrate containing a Si-O-Si bond that has been modified in advance, and then chemically etching only the modified portion. Development of new micro / nano devices based on the compounds containing them is also possible. This result can be applied to device fabrication in the fields of electronics, optoelectronics, photonics or bio / medical, and its use is useful not only in electricity and electronics but also in all fields.
以上本発明の実施の形態及び実施例について説明してきたが、本発明はこれに限定されることなく請求項の記載の範囲内において各種の変形、変更が可能なことは当業者には自明であろう。 Although the embodiments and examples of the present invention have been described above, it is obvious to those skilled in the art that the present invention is not limited thereto and various modifications and changes can be made within the scope of the claims. I will.
１ チャンバー
２ 基体
３ マスク
５ ターゲット
６ ＤＬＣ膜
１０ リザーバー
１１ 導入管
２０ ＰＬＤ用光源
２１ 集光用光学系
２２ 入射窓
DESCRIPTION OF SYMBOLS 1 Chamber 2 Base | substrate 3 Mask 5 Target 6 DLC film 10 Reservoir 11 Introducing pipe 20 Light source for PLD 21 Optical system for condensing 22 Incident window
Claims (6)
その後、前記改質部分のみを化学エッチングする工程とを備えることを特徴とするデバイス作製法。 A step of selectively forming a film in a gas phase so as to cover the modified portion by closely arranging a mask on a substrate having a modified portion that has been modified in advance;
And a step of chemically etching only the modified portion.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03217803A (en) * | 1990-01-24 | 1991-09-25 | Ricoh Co Ltd | Method and device for forming microoptical element |
| JP2000307141A (en) * | 1999-02-16 | 2000-11-02 | Tdk Corp | Functional part and its manufacture |
| JP2003147525A (en) * | 2001-11-07 | 2003-05-21 | Rikogaku Shinkokai | Protective film |
| JP2004123816A (en) * | 2002-09-30 | 2004-04-22 | Tech Res & Dev Inst Of Japan Def Agency | SURFACE MODIFYING METHOD OF SOLID COMPOUND HAVING Si-O-Si BOND BY USING LASER BEAM |
| JP2004272049A (en) * | 2003-03-11 | 2004-09-30 | Tech Res & Dev Inst Of Japan Def Agency | METHOD FOR FORMING SOLID COMPOUND FILM CONTAINING Si-O-Si BOND, MODIFICATION METHOD OF SOLID COMPOUND FILM INTO SILICON OXIDE, METHOD FOR FORMING PATTERN, AND LITHOGRAPHIC RESIST |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03217803A (en) * | 1990-01-24 | 1991-09-25 | Ricoh Co Ltd | Method and device for forming microoptical element |
| JP2000307141A (en) * | 1999-02-16 | 2000-11-02 | Tdk Corp | Functional part and its manufacture |
| JP2003147525A (en) * | 2001-11-07 | 2003-05-21 | Rikogaku Shinkokai | Protective film |
| JP2004123816A (en) * | 2002-09-30 | 2004-04-22 | Tech Res & Dev Inst Of Japan Def Agency | SURFACE MODIFYING METHOD OF SOLID COMPOUND HAVING Si-O-Si BOND BY USING LASER BEAM |
| JP2004272049A (en) * | 2003-03-11 | 2004-09-30 | Tech Res & Dev Inst Of Japan Def Agency | METHOD FOR FORMING SOLID COMPOUND FILM CONTAINING Si-O-Si BOND, MODIFICATION METHOD OF SOLID COMPOUND FILM INTO SILICON OXIDE, METHOD FOR FORMING PATTERN, AND LITHOGRAPHIC RESIST |
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