JP2011246759A - Film deposition device and film deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film deposition device and a film deposition method, capable of improving a film thickness distribution of a substrate surface having an irregular structure.SOLUTION: A film deposition device 1 is provided for depositing a film on a substrate W having an irregular structure formed along a first direction that is one direction on a surface to be deposited. The film deposition device includes: a stage 3; a film deposition source 4; a detection part 10; and a film deposition source control part 16. The film deposition source 4 produces film deposition particles from a film deposition material T, and irradiates the film deposition particles from a second direction toward the substrate W supported by the stage 3. The detection part 10 detects a rotation angel of the stage 3. The film deposition source control part 16 controls the film deposition source 4 such that, based on a detected result of the detection part 10, a film deposition rate is set to a first film deposition rate at such a rotation angle that the first direction is in parallel with a third direction formed by projecting the second direction on the surface to be deposited, while the film deposition rate is set to a second film deposition rate lower than the first film deposition rate at such a rotation angle that the first direction is perpendicular to the third direction.

Description

  The present invention relates to a film forming apparatus and a film forming method capable of forming a thin film uniformly on the surface of a substrate having an uneven structure.

  In recent years, various film forming apparatuses for forming a thin film with a uniform film thickness on the surface of a substrate (hereinafter referred to as a film formation surface) have been proposed. For example, the following Patent Document 1 includes a sputtering target disposed so as to face the deposition surface in an oblique direction, and a holder motor that rotates the substrate holder around the center of the substrate, and rotates the substrate. In addition, there is described a sputtering apparatus in which vapor deposition particles are incident on a deposition surface from an oblique direction.

JP 2008-103026 A

  However, the sputtering apparatus configured as described above can form a film with a good film thickness distribution on a substrate having a flat film-forming surface, but has a film-forming surface with an uneven structure. There is a problem that a substrate having a thickness cannot be formed with a good film thickness distribution. This is because the angle facing the sputtering target differs depending on each region of the concavo-convex structure, and the deposition rate differs. Even if the substrate is rotated, the deposition rate in each region of the concavo-convex structure cannot be made uniform because the distance between one point on the deposition surface and the sputtering target varies.

In view of the circumstances as described above, an object of the present invention is to provide a film forming apparatus and a film forming method capable of improving the film thickness distribution on the surface of a substrate having an uneven structure.
Is to provide.

In order to achieve the above object, according to one embodiment of the present invention, there is provided a substrate having a concavo-convex structure which has a film formation surface and is formed along a first direction which is one direction on the film formation surface. The film forming apparatus for forming a film on the film formation surface includes a stage, a film forming source, a detecting unit, and a film forming source control unit.
The stage supports the substrate and rotates about an axis perpendicular to the film formation surface.
The film-forming source generates film-forming particles from a film-forming material, and a second direction that is oblique to the film-forming surface is formed on the film-forming surface of the substrate supported by the stage The film-forming particles are irradiated.
The detection unit detects a rotation angle of the stage.
The film formation source control unit projects the first direction and the second direction onto the same plane as the film formation surface based on the detection result of the detection unit. When the rotation angle is parallel to the third direction, the film-forming source is controlled so that the film-forming speed becomes the first film-forming speed, and the substrate on the stage is aligned with the first direction. When the rotation angle is perpendicular to the third direction, the deposition source is controlled so that the deposition rate is a second deposition rate that is lower than the first deposition rate.

In order to achieve the above object, according to one embodiment of the present invention, there is provided a substrate having a concavo-convex structure formed along a first direction which is a unidirectional direction on the deposition surface and has a deposition surface. In order to form a film on the deposition surface, the film forming apparatus includes a stage, a film forming source, a detection unit, and a film forming source control unit.
The stage supports the substrate and rotates about an axis perpendicular to the film formation surface.
The film-forming source generates film-forming particles from a film-forming material, and a second direction that is oblique to the film-forming surface is formed on the film-forming surface of the substrate supported by the stage The film-forming particles are irradiated.
The detection unit detects a rotation angle of the stage.
The stage control unit is configured to project the third direction in which the substrate on the stage projects the first direction and the second direction on the same plane as the film formation surface based on the detection result of the detection unit. When the rotation angle is parallel to the direction, the stage is controlled so that the rotation speed becomes the first rotation speed, and the substrate on the stage has the first direction and the third direction. When the rotation angle is vertical, the stage is controlled so that the rotation speed becomes a second rotation speed higher than the first rotation speed.

In order to achieve the above object, according to one embodiment of the present invention, there is provided a substrate having a concavo-convex structure formed along a first direction which is a unidirectional direction on the deposition surface and has a deposition surface. In the film formation method for forming a film on the film formation surface, the substrate is placed on a stage and the stage is rotated around an axis perpendicular to the film formation surface.
A film-forming source generates film-forming particles from a film-forming material, and the film-forming surface of the substrate supported by the stage is moved from a second direction that is oblique to the film-forming surface. Irradiate film-forming particles.
When the film forming source control unit has the first direction parallel to the third direction in which the second direction is projected onto the same surface as the film forming surface, the film forming speed is the first. When the film-forming source is controlled so that the film-forming speed is the same, and the first direction and the third direction are perpendicular to each other, the film-forming speed is smaller than the first film-forming speed. The film formation source is controlled so that the film formation speed is as follows.

In order to achieve the above object, according to one embodiment of the present invention, there is provided a substrate having a concavo-convex structure formed along a first direction which is a unidirectional direction on the deposition surface and has a deposition surface. In the film formation method for forming a film on the film formation surface, the substrate is placed on a stage and the stage is rotated around an axis perpendicular to the film formation surface.
A film-forming source generates film-forming particles from a film-forming material, and the film-forming surface of the substrate supported by the stage is moved from a second direction that is oblique to the film-forming surface. Irradiate film-forming particles.
When the stage controller has the first direction parallel to the third direction in which the second direction is projected on the same plane as the film formation surface, the rotational speed is the first rotational speed. When the stage is controlled so that the first direction and the third direction are perpendicular to each other, the rotation speed is set to a second rotation speed higher than the first rotation speed. Control the stage.

It is a schematic block diagram of the sputtering device which concerns on 1st Embodiment. It is the perspective view which looked at the chamber of the sputtering device concerning a 1st embodiment from the upper surface direction. It is a figure which shows the board | substrate made into the film-forming object by the sputtering device which concerns on 1st Embodiment. It is a conceptual diagram which shows the positional relationship of the sputtering cathode and board | substrate of the sputtering device which concerns on 1st Embodiment. It is a schematic diagram which shows the relationship between the rotation angle of a board | substrate and the 1st direction in the sputtering device which concerns on 1st Embodiment. It is a graph which shows an example of control of the applied voltage by the power supply control part of the sputtering device concerning a 1st embodiment. It is a graph which shows an example of control of the applied voltage by the power supply control part of the sputtering device concerning a 1st embodiment. It is a graph which shows an example of control of the applied voltage by the power supply control part of the sputtering device concerning a 1st embodiment. FIG. 4 is a plan view showing positions of points set on a substrate in explaining the operation of the sputtering apparatus according to the first embodiment. It is a figure which shows the uneven structure of the board | substrate made into the film-forming object by the sputtering device which concerns on 1st Embodiment. It is a table | surface which shows the laminated | stacked film thickness for every position and area | region on a board | substrate at the time of forming into a film with the film-forming method which concerns on a comparative example. It is a table | surface which shows the laminated film thickness for every position and area | region on a board | substrate at the time of forming into a film using the sputtering device which concerns on 1st Embodiment. It is a schematic block diagram of the sputtering device which concerns on 2nd Embodiment. It is a graph which shows an example of control of the stage rotation speed by the drive source control part of the sputtering device concerning a 2nd embodiment.

According to an embodiment of the present invention, the deposition surface of a substrate having a deposition surface and having a concavo-convex structure formed along a first direction that is one direction on the deposition surface. The film forming apparatus includes a stage, a film forming source, a detecting unit, and a film forming source control unit.
The stage supports the substrate and rotates about an axis perpendicular to the film formation surface.
The film-forming source generates film-forming particles from a film-forming material, and a second direction that is oblique to the film-forming surface is formed on the film-forming surface of the substrate supported by the stage The film-forming particles are irradiated.
The detection unit detects a rotation angle of the stage.
The film formation source control unit projects the first direction and the second direction onto the same plane as the film formation surface based on the detection result of the detection unit. When the rotation angle is parallel to the third direction, the film-forming source is controlled so that the film-forming speed becomes the first film-forming speed, and the substrate on the stage is aligned with the first direction. When the rotation angle is perpendicular to the third direction, the deposition source is controlled so that the deposition rate is a second deposition rate that is lower than the first deposition rate.

  Looking at a point on the substrate on which the concavo-convex structure is formed, when the first direction and the third direction are perpendicular to each other, a region facing the irradiation source of the concavo-convex structure (hereinafter referred to as an opposing region) is an angle with respect to the irradiation source. Since the irradiation angle (hereinafter referred to as “irradiation angle”) is an obtuse angle, the irradiation density of the film forming particles from the irradiation source is large. On the other hand, the area on the back side thereof (hereinafter referred to as the back area) is shaded by the concavo-convex structure, or the irradiation angle of the film forming particles is small because the irradiation angle is acute. For this reason, when the first direction and the third direction are perpendicular to each other, the deposition rate (the deposition rate for each region) differs greatly between the facing region and the back region. On the other hand, when the first direction and the third direction are parallel, the irradiation angle does not differ depending on the region of the concavo-convex structure, so the irradiation density of the film forming particles is the same and the film formation speed is also the same. Here, in this embodiment, the film formation source control unit controls the film formation source based on the rotation angle of the stage detected by the detection unit, that is, the intersection angle between the first direction and the third direction, The film forming speed (speed at which the film forming source forms a film) is varied. As a result, in the situation where the deposition rate differs greatly depending on the region of the concavo-convex structure (that is, the first direction and the third direction are perpendicular), the deposition rate itself is reduced, and the formed film thickness is reduced. Become. In a situation where the deposition rate is equivalent (ie, the first direction and the third direction are parallel) due to the uneven structure region, the deposition rate is not reduced and the deposition is performed uniformly. By repeatedly forming the film, the film thickness distribution can be improved as compared with the case where the film is formed without changing the film formation speed.

  The deposition source includes a sputtering cathode and a voltage supply unit that supplies an applied voltage to the sputtering cathode, and the deposition source control unit controls the deposition rate by controlling the voltage supply unit. Good.

  According to this configuration, the film formation rate can be controlled by increasing or decreasing the voltage applied to the sputtering target. The deposition rate control method is not limited to voltage control, but the voltage can be controlled with good responsiveness.

  The film formation source control unit sets the applied voltage as the first voltage when the intersection angle between the first direction and the third direction is not less than 0 ° and less than 45 °, and the intersection angle is not less than 45 ° and not more than 90 °. When the angle is less than 0 °, the applied voltage may be a second voltage lower than the first voltage.

  According to this configuration, when the crossing angle between the first direction and the third direction is parallel or nearly parallel, the film forming speed is increased, and the crossing angle between the first direction and the third direction is vertical or close to vertical. Sometimes it is possible to slow down the deposition rate.

According to an embodiment of the present invention, a substrate having a film-forming surface and having a concavo-convex structure formed along a first direction that is one direction on the film-forming surface is formed on the film-forming surface. In order to form a film, the film formation apparatus includes a stage, a film formation source, a detection unit, and a film formation source control unit.
The stage supports the substrate and rotates about an axis perpendicular to the film formation surface.
The film-forming source generates film-forming particles from a film-forming material, and a second direction that is oblique to the film-forming surface is formed on the film-forming surface of the substrate supported by the stage The film-forming particles are irradiated.
The detection unit detects a rotation angle of the stage.
The stage control unit is configured to project the third direction in which the substrate on the stage projects the first direction and the second direction on the same plane as the film formation surface based on the detection result of the detection unit. When the rotation angle is parallel to the direction, the stage is controlled so that the rotation speed becomes the first rotation speed, and the substrate on the stage has the first direction and the third direction. When the rotation angle is vertical, the stage is controlled so that the rotation speed becomes a second rotation speed higher than the first rotation speed.

  In the present embodiment, the stage control unit controls the stage based on the rotation angle of the stage detected by the detection unit, that is, the intersection angle between the first direction and the third direction, and varies the deposition rate. . Accordingly, the film thickness to be formed becomes small in the case where the deposition rate is greatly different depending on the region of the concavo-convex structure (that is, the first direction and the third direction are perpendicular). In the case where the deposition rate is the same (ie, the first direction and the third direction are parallel) due to the uneven structure region, the film is formed evenly. By repeatedly forming the film, it is possible to improve the film thickness distribution as compared with the case where the film is formed without changing the rotational speed of the stage.

According to an embodiment of the present invention, a substrate having a film-forming surface and having a concavo-convex structure formed along a first direction that is one direction on the film-forming surface is formed on the film-forming surface. In the film formation method for forming a film, the substrate is placed on a stage and the stage is rotated around an axis perpendicular to the film formation surface.
A film-forming source generates film-forming particles from a film-forming material, and the film-forming surface of the substrate supported by the stage is moved from a second direction that is oblique to the film-forming surface. Irradiate film-forming particles.
When the film forming source control unit has the first direction parallel to the third direction in which the second direction is projected onto the same surface as the film forming surface, the film forming speed is the first. When the film-forming source is controlled so that the film-forming speed is the same, and the first direction and the third direction are perpendicular to each other, the film-forming speed is smaller than the first film-forming speed. The film formation source is controlled so that the film formation speed is as follows.

According to an embodiment of the present invention, a substrate having a film-forming surface and having a concavo-convex structure formed along a first direction that is one direction on the film-forming surface is formed on the film-forming surface. In the film formation method for forming a film, the substrate is placed on a stage and the stage is rotated around an axis perpendicular to the film formation surface.
A film-forming source generates film-forming particles from a film-forming material, and the film-forming surface of the substrate supported by the stage is moved from a second direction that is oblique to the film-forming surface. Irradiate film-forming particles.
When the stage controller has the first direction parallel to the third direction in which the second direction is projected on the same plane as the film formation surface, the rotational speed is the first rotational speed. When the stage is controlled so that the first direction and the third direction are perpendicular to each other, the rotation speed is set to a second rotation speed higher than the first rotation speed. Control the stage.

(First embodiment)
A sputtering apparatus according to the first embodiment of the present invention will be described.

[Configuration of sputtering equipment]
FIG. 1 is a schematic configuration diagram of a sputtering apparatus 1 according to the first embodiment of the present invention. In the present embodiment, the sputtering apparatus 1 is a DC (Direct Current) sputtering apparatus, but is not limited thereto, and is not limited to this. It may be of a system.

  The sputtering apparatus 1 includes a chamber 2. Inside the chamber 2, a stage 3 for supporting the substrate W and a sputter cathode 4 are installed. Schematically, the sputtering apparatus 1 is an apparatus that irradiates the surface of a substrate W placed on a stage 3 in a chamber 2 with film-forming particles from a sputtering cathode 4 to form a film. Hereinafter, a surface on which the substrate W is formed is referred to as a film formation surface.

  The chamber 2 can be depressurized to a predetermined degree of vacuum through a vacuum exhaust device (not shown). The sputtering apparatus 1 includes a gas introduction nozzle (not shown) for introducing a reactive gas such as argon gas or oxygen or nitrogen into the chamber 2. The gas introduction nozzle is attached to a predetermined position of the chamber 2.

  The stage 3 is composed of a hot plate having a heating source 5 inside. The heating source 5 heats the substrate W placed on the stage 3 to a predetermined temperature. The predetermined temperature is, for example, a constant temperature in the range of 20 ° C to 500 ° C. As the heating source 5, for example, a resistance heating type heating source is applied.

  The stage 3 is made of an insulating material (for example, PBN: pyrolytic boron nitride), and an appropriate number of electrostatic chuck electrodes 11 are installed at appropriate positions inside the vicinity of the surface. As a result, the substrate W is brought into close contact with the surface of the stage 3 so as to achieve in-plane uniformity of the substrate temperature.

  The stage 3 is installed on a base 6 made of metal (for example, aluminum). The pedestal 6 is provided with a rotation shaft 7 extending in a direction perpendicular to the film formation surface of the substrate W at the center of the lower surface thereof, and is configured to be rotatable via a drive source 8 such as a motor. The rotary shaft 7 is attached to the bottom wall of the chamber 2 via a seal mechanism 9 such as a bearing mechanism (not shown) and a magnetic fluid seal. The drive source 8 is connected to a detection unit 10 for detecting the rotation drive angle of the drive source 8, that is, the rotation angle of the stage 3. Note that the detection unit 10 may be provided directly on the rotation shaft 7 to detect the rotation angle of the rotation shaft 7. The rotation angle of the stage 3 detected by the detection unit 10 is input to the power supply control unit 16 described later.

  Although not shown, a cooling jacket in which a cooling medium circulates is provided inside the pedestal 6, and the stage 3 can be cooled to a predetermined temperature (for example, −40 ° C. to 0 ° C.). The coolant introduction / outflow conduit 17 is installed inside the rotary shaft 7 together with the heating source wiring 12, the electrostatic chuck wiring 13, and the like. A temperature measuring wire 14 connected to a temperature measuring means such as a thermocouple (not shown) for measuring the temperature of the stage 3 is further installed inside the rotating shaft 7.

  Furthermore, in the sputtering apparatus 1 of the present embodiment, the adhesion direction of the film forming material to the inner wall surface of the chamber 2 or the magnetization direction of the magnetic film when the magnetic film is formed on the substrate W are used. A magnet for controlling the above may be provided.

  The sputter cathode 4 includes a target T and is connected to a power source 15 that supplies an applied voltage to the sputter cathode 4. The power supply 15 is connected to a power supply control unit 16 that controls the voltage supplied from the power supply 15 to the sputtering cathode 4. When the power supply 15 supplies an applied voltage to the sputtering cathode 4 under the control of the power supply control unit 16, the sputtering gas (for example, Ar) introduced into the chamber 2 is ionized and collides with the target T, and the material of the target T ( Hereinafter, the target material) is ejected to form film-forming particles. The film-forming particles fly with kinetic energy and adhere to the film-forming surface of the substrate W. That is, film formation particles are generated by the sputter cathode 4 and irradiated onto the substrate W. When the power supply control unit 16 controls the applied voltage, the collision speed and collision frequency of the gas ions can be increased or decreased, and the film formation speed (the film formation speed on the substrate W of the sputtering cathode 4) can be varied.

  The type of target material is not particularly limited. For example, in the production of resistance change elements such as MRAM (Magnetic Random Access Memory) and PRAM (Phase change Random Access Memory), a ferromagnetic material or antiferromagnetic material constituting at least one functional layer of the element is used. Can do. Specific examples include Ni—Fe, Co—Fe, Pt—Mn, Ge—Sb—Te, and Tb—Sb—Fe—Co based materials.

  In addition, a target material of a material constituting an insulating layer, a protective layer, or a conductive layer in the magnetic multilayer film element may be used. For example, depending on the type of element to be manufactured, such as Cu, Ru, Ta, Al, etc. A target material can be selected. It is also possible to form an oxide film or a nitride film by introducing a reactive gas such as oxygen or nitrogen into the chamber 2.

  FIG. 2 is a perspective view of the chamber 2 as viewed from above. As shown in the figure, the sputter cathode 4 is formed such that the target T is deposited on the substrate W such that the irradiation direction of the deposited particles is oblique to the deposition surface of the substrate W. It arrange | positions so that it may oppose a surface from the diagonal direction. Although the film-forming particles are diffused and released from the target T to some extent, the direction perpendicular to the surface to be sputtered of the target T is defined as the irradiation direction of the film-forming particles (hereinafter referred to as “second direction”).

[About the board]
A substrate W that is a film formation target of the sputtering apparatus 1 according to the present embodiment will be described.
FIG. 3A is a perspective view showing the substrate W, and FIG. 3B is an enlarged view of the substrate W. FIG. 3C is a schematic cross-sectional view of the substrate W. In these drawings, two orthogonal directions on the film formation surface are defined as an X direction and a Y direction, and a direction perpendicular to the X direction and the Y direction is defined as a Z direction. As shown in these drawings, a plurality of concavo-convex structures s are formed on the substrate W along one direction on the film formation surface. One direction on the film formation surface is defined as a “first direction” and coincides with the X direction. The concavo-convex structure s shown in these drawings is a size for convenience, and actually a size on the order of microns, for example, is assumed. Further, the uneven structure s does not have to be formed on the entire surface of the film formation surface, and may be formed at least partially. The shape of the substrate W is not limited to a disk shape. Further, the substrate W is formed with a notch (notch) N for a robot or the like that transports the substrate W onto the stage 3 to confirm the orientation of the substrate W. Here, it is assumed that the notch N is provided at a position where a line connecting the notch N and the center of the substrate W is orthogonal to the first direction. An orientation flat may be used as the notch N.

  As shown in these drawings, the concavo-convex structure s is a concavo-convex structure formed uniformly along the first direction, and the surface on which the film is formed is XY at a fine level by the concavo-convex structure s. It can be divided into a plurality of regions having different angles with respect to the plane. Of the film formation surface, a region parallel to the XY plane between the top surface of the concavo-convex structure s and the concavo-convex structure s is a flat region a1, and a region inclined to the XY plane is one side surface of the concavo-convex structure s. Is a first side surface region a2, and the other side surface of the concavo-convex structure s is a region inclined with respect to the XY plane as a second side surface region a3. Here, the first side surface region a2 is located on the notch N side of the concavo-convex structure s, and the second side surface region a3 is located on the opposite side of the notch N. The inclination angle of the first side surface region a2 and the second side surface region a3 is arbitrary, and may be, for example, perpendicular to the XY plane. As a substrate having such a structure, for example, a substrate for producing a GMR (Giant Maneto Resistance) element is assumed.

[Relationship between sputter cathode and substrate]
The positional relationship between the sputter cathode 4 and the substrate W will be described. FIG. 4A and FIG. 4B are conceptual diagrams showing these positional relationships. 4A is a perspective view, and FIG. 4B is a plan view seen from a direction perpendicular to the film formation surface of the substrate W. FIG. As described above, the substrate W has a film formation surface on the XY plane, and the concavo-convex structure s is formed along the first direction (d1 in the drawing) which is the X direction. Further, the irradiation direction of the film formation particles with respect to the film formation surface of the sputtering cathode 4 is a second direction (d2 in the figure) that is an oblique direction with respect to the film formation surface. Here, the direction in which the second direction is projected on the same plane as the film formation surface, that is, the XY plane (Z component is 0) is defined as a third direction (d3 in the figure). An angle at which the first direction and the third direction intersect in the XY plane is defined as an “intersection angle”. In the state shown in FIGS. 4A and 4B, the crossing angle is 90 °.

[Operation of deposition system]
The operation of the sputtering apparatus 1 configured as described above will be described.
First, the substrate W is placed on the stage 3 by a substrate transfer robot or the like. At this time, the notch N formed in the substrate W is used as a reference, and the substrate W is placed in a predetermined direction. Here, as shown in FIG. 4B, it is assumed that the notch N is arranged on the sputter cathode 4 side.

  After the inside of the chamber 2 is evacuated, a sputtering gas is introduced. Further, the substrate W is heated to a predetermined temperature by the heating source 5. When these preparations are completed, the rotary shaft 7 is rotationally driven by the drive source 8, and the substrate W placed on the stage 3 rotates. At this time, the rotation angle of the substrate W is detected by the detection unit 10.

  A voltage is applied between the substrate W and the target T by the power supply 15 controlled by the power supply control unit 16, and sputtering of the target T by the ionized sputtering gas is started. Particles (film formation particles) of the target material generated by sputtering are irradiated toward the substrate W, and are formed on the film formation surface of the substrate W.

  Here, the power supply control unit 16 controls the voltage applied to the target T of the power supply 15 according to the rotation angle of the substrate W detected by the detection unit 10. 5A to 5D are schematic views showing the relationship between the rotation angle of the substrate W and the first direction. Since the substrate W is arranged in the above-mentioned direction, as shown in these drawings, the rotation is performed when the rotation angle of the substrate W is 0 ° (FIG. 5A) and 180 ° (FIG. 5C). The first direction and the third direction are orthogonal to each other, and the first direction and the third direction when the rotation angle of the substrate W is 90 ° (FIG. 5B) and 270 ° (FIG. 5D). The directions are parallel.

  FIG. 6 is a graph showing an example of control of the applied voltage of the power supply control unit 16. As shown in the figure, when the rotation angle of the stage 3 (substrate W) is not less than 0 ° and less than 45 °, the power supply controller 16 sets the applied voltage to voltage A, and the rotation angle of the substrate W is not less than 45 ° and less than 135 °. In this case, the applied voltage is set to a voltage B higher than the voltage A. Similarly, the voltage A is set when the rotation angle is 135 ° or more and less than 225 ° and 315 ° or more and less than 360 °, and the voltage B is set when the rotation angle is 225 ° or more and less than 315 °. Although details will be described later, the voltage A and the voltage B can be set such that the film formation rate at the voltage A is 22% with respect to the film formation rate at the voltage B, for example.

  The control of the voltage is as follows when it is defined by the intersection angle between the first direction and the third direction. That is, when the crossing angle is 0 ° or more and less than 45 °, the applied voltage is voltage B, and when the crossing angle is 45 ° or more and less than 90 °, voltage A is used.

  The waveform of the applied voltage controlled by the power supply control unit 16 is not limited to the rectangular wave shown in FIG. 6, and becomes a voltage A when the rotation angle is 0 ° and 180 °, and becomes a voltage A when the rotation angle is 90 ° and 270 °. It can be a waveform. For example, a triangular wave shown in FIG. 7 or a sine wave shown in FIG. 8 can be used. Alternatively, a pulse wave that applies a voltage only when the crossing angle is 90 ° or 270 ° may be used.

  As described above, the power supply control unit 16 controls the voltage that the power supply 15 applies to the target T, so that the film formation speed varies. Specifically, when the applied voltage is the voltage B, compared with the voltage A, the collision speed and collision frequency of the sputtering gas ions are high, and the film formation speed is high. Note that the method of changing the deposition rate is not limited to the control of the applied voltage, but the applied voltage is preferable because it can be controlled with high responsiveness.

[Effects of voltage control]
The effect of the power supply control unit 16 controlling the voltage applied to the target T by the power supply 15 as described above will be described. For explanation, a substrate W having a plurality of points is set as a model. FIG. 9 is a plan view showing the positions of the points P1, P2, P3, P4 and P5 set on the substrate W. FIG. In FIG. 9, the concavo-convex structure s is not shown. Point P1 is a center point of substrate W, point P2 is a point near notch N near the outer periphery of substrate W, and point P3 is a point near the outer periphery on the opposite side of substrate W from point P2 to point P1. Further, the point P4 is near the outer periphery of the substrate W on the perpendicular bisector of the line connecting the points P2 and P3, and is a point on the left side when viewed from the notch N side, and the point P5 is a line connecting the points P2 and P3. And a point on the right side of the notch N side in the vicinity of the outer periphery of the substrate W on the vertical bisector. Further, it is assumed that the substrate W is placed on the stage with the notch N facing the sputter cathode 4 side.

  Assume that the voltage applied to the target T is constant and the film is formed without rotating the substrate W. In this case, the film thickness when the film is formed for a predetermined time is also shown in FIG. The table shown in FIG. 9 shows the film thickness formed in each of the flat region a1, the first side surface region a2, and the second side surface region a3 at the points P1 to P5, and the film thickness of the flat region a1 at the point P1. The thickness is shown as 100.

  Regarding the point P1, the film thicknesses of the flat region a1, the first side surface region a2, and the second side surface region a3 are different, the film thickness of the first side surface region a2 is the largest, and the film thickness of the second side surface region a3 is the largest. small. This is because the deposition rate of each region (the rate at which each region is deposited) varies depending on the angle at which each region faces the sputter cathode 4. FIGS. 10A and 10B are schematic views showing the uneven structure s at the point P1. As shown in FIG. 10A, the angle formed by the first side surface region a2 with the direction of the sputter cathode 4 (second direction d2) is larger than that of the flat region a1. Further, the angle formed by the second side surface region a3 with the second direction is smaller than that of the flat region a1, or the second side surface region a3 is behind the concavo-convex structure s. Since most of the film-forming particles irradiated from the sputter cathode 4 come from the second direction, the number of film-forming particles per unit area increases as the angle formed with the second direction becomes closer to the vertical direction (deposition target). The film speed increases, and a difference in film thickness occurs as shown in FIG.

  For the same reason as described above, the thickness of the first side surface region a2 is the largest and the thickness of the second side surface region a3 is the smallest as shown in the table of FIG. The reason why the film thicknesses of the regions are different between the points P1 to P5 is that the deposition rate varies depending on the distance to the sputtering cathode 4 and the angle facing the sputtering cathode 4.

  Next, it is assumed that the film is formed by rotating the substrate W with the voltage applied to the target T being constant. In this case, it is assumed that the substrate W is rotated 100 times. FIG. 11 is a table in which the integrated film thicknesses in the respective regions of the points P1 to P5 in this case are calculated. The integrated film thickness is obtained by integrating the film thicknesses shown in FIG. 9 on the assumption that the film formation is performed once at each rotation position of 0 °, 90 °, 180 °, and 270 °.

  Looking at the point P1, since the point P1 is the center point of the substrate W, it only rotates at that position. Therefore, with respect to the flat region a1, 10000 obtained by multiplying the film thickness 100 formed by one film formation by the number of film formations 100 is formed at respective rotation positions of 0 °, 90 °, 180 °, and 360 °. The film thickness is 40000 when integrated.

  The first side surface region a2 at the point P1 has a film thickness of 12000 by multiplying the film thickness 120 (described as a2 of P1 in FIG. 9, hereinafter referred to as P1a2) by the number of film formations 100 at a rotation angle of 0 °. At a rotation angle of 90 °, the first side surface region a2 faces the direction orthogonal to the direction of the sputter cathode 4 (the direction of the point P5 in FIG. 9). Therefore, assuming that the film is formed to the same extent as the flat region a1 at the time of non-rotation, the film thickness 100 (P1a1) is multiplied by the number of film formations 100 to obtain a film thickness of 10,000. At a rotation angle of 180 °, the first side surface region a2 faces the direction opposite to the direction of the sputtering cathode 4 (the direction of the point P3 in FIG. 9). For this reason, it is assumed that the film is formed to the same extent as the second side surface region a3 at the time of non-rotation, and the film thickness 45 (P1a3) is multiplied by the number of film formations 100 to obtain the film thickness 4500. At the rotation angle of 270 °, as in the case of the rotation angle of 90 °, the film thickness 100 (P1a1) is multiplied by the number of film formations 100 to obtain a film thickness of 10,000.

  The second side surface region a3 at the point P1 has a film thickness of 4500 by multiplying the film thickness 45 (P1a3) by the film formation count 100 at a rotation angle of 0 °. At a rotation angle of 90 °, the second side surface region a2 faces the direction orthogonal to the direction of the sputter cathode 4 (the direction of the point P4 in FIG. 9). Therefore, assuming that the film is formed to the same extent as the flat region a1 at the time of non-rotation, the film thickness 100 (P1a1) is multiplied by the number of film formations 100 to obtain a film thickness of 10,000. At a rotation angle of 180 °, the first side surface region a2 faces the direction of the sputter cathode 4. For this reason, it is assumed that the film is formed to the same extent as the first side surface region a2 at the time of non-rotation, and the film thickness 120 (P1a2) is multiplied by the number of film formations 100 to obtain the film thickness 12000. At the rotation angle of 270 °, as in the case of the rotation angle of 90 °, the film thickness 100 (P1a1) is multiplied by the number of film formations 100 to obtain a film thickness of 10,000.

  Thus, regarding the point P1, the integrated film thicknesses of the flat region a1 are the film thickness 40000, the first side surface region a2 is the film thickness 36500, and the second side surface region a3 is the film thickness 36500.

  Subsequently, the point P2 will be examined. The point P2 moves to the position of the point P5 in FIG. 9 when the substrate W rotates by 90 °, and sequentially moves to the position of P3 at 180 ° and the position of P4 at 270 °. Therefore, the flat region a1 has a film thickness of 16000 by multiplying the film thickness 160 (P2a1) by the number of film formations 100 at a rotation angle of 0 °. At the rotation angle of 90 °, the point P2 has moved to the position of the point P5, so that the film thickness 90 (P5a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000. At the rotation angle 180, since the point P2 has moved to the position of the point P3, the film thickness 55 (P3a1) is multiplied by the number of film formations 100 to obtain a film thickness of 5500. At the rotation angle of 270 °, the point P2 has moved to the position of the point P4, so that the film thickness 90 (P4a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000.

  The first side surface region a2 at the point P2 has a film thickness of 17000 by multiplying the film thickness 170 (P2a2) by the number of film formations 100 at a rotation angle of 0 °. At a rotation angle of 90 °, the first side surface region a2 faces the direction orthogonal to the direction of the sputter cathode 4. For this reason, assuming that the film is formed to the same extent as the flat region a1 at the position of the point P5 at the time of non-rotation, the film thickness 90 (P5a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000. At a rotation angle of 180 °, the first side surface region a2 faces in the direction opposite to the direction of the sputter cathode 4. Therefore, assuming that the film is formed to the same extent as the second side surface region a2 at the position of the point P3 at the time of non-rotation, the film thickness 5 (P3a3) is multiplied by the number of film formations 100 to obtain a film thickness 500. At the rotation angle of 270 °, as in the case of the rotation angle of 90 °, the film thickness 90 (P4a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000.

  The second side surface region a3 at the point P2 has a film thickness of 8000 by multiplying the film thickness 80 (P2a3) by the film formation count 100 at a rotation angle of 0 °. At a rotation angle of 90 °, the second side surface region a3 faces the direction orthogonal to the direction of the sputter cathode 4. For this reason, assuming that the film is formed to the same extent as the flat region a1 at the position of the point P5 at the time of non-rotation, the film thickness 90 (P5a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000. At a rotation angle of 180 °, the first side surface region a2 faces the direction of the sputter cathode 4. Therefore, assuming that the film is formed to the same extent as the first side surface region a2 at the position of the point P3 at the time of non-rotation, the film thickness 90 (P3a2) is multiplied by the number of film formations 100 to obtain a film thickness of 9000. At the rotation angle of 270 °, as in the case of the rotation angle of 90 °, the film thickness 90 (P4a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000.

  As described above, regarding the point P2, the respective integrated film thicknesses are the film thickness 39500 for the flat region a1, the film thickness 35500 for the first side surface region a2, and the film thickness 35000 for the second side surface region a3.

  Hereinafter, the points P3, P4 and P5 can be calculated in the same manner as the point P2. In this way, the integrated film thickness of each region of the points P1 to P5 shown in FIG. 11 is calculated. When the film thickness distribution of all regions (standard deviation / average × 100) is calculated for this integrated film thickness, it is 11.2%. On the other hand, when the film thickness distribution of only the flat region a1 is calculated, it is 0.56%. From here, when the film is formed by simply rotating the substrate W, the film thickness distribution of each flat region a1 at each of the points P1 to P5 is good, but the first side region a2 and the second side region a3 are added. Moreover, it can be said that the film thickness distribution in all the regions is not good.

  Subsequently, how is the film thickness distribution in the case of the film forming method according to the present embodiment using the above model, that is, the film forming method in which the voltage applied to the target T is changed according to the rotation angle of the substrate W? Consider what will happen.

  FIG. 12 is a table in which the integrated film thicknesses in the respective regions of the points P1 to P5 are calculated when the film is formed by the film forming method in the present embodiment. The integrated film thickness is obtained by integrating the film thicknesses shown in FIG. 9 on the assumption that the film formation is performed once at each rotation position of 0 °, 90 °, 180 °, and 270 °.

  As described above, in the present embodiment, the voltage applied to the target T is the voltage B when the first direction and the third direction are parallel, and the voltage when the first direction and the third direction are orthogonal. The voltage A is smaller than B. In the above model, the first direction and the third direction are orthogonal when the rotation angle of the substrate W is 0 ° and 180 °, and the first direction and the third direction when the rotation angle is 90 ° and 270 °. The directions are supposed to be parallel. Therefore, the applied voltage is voltage B when the rotation angles are 0 ° and 180 °, and the applied voltage is voltage A when the rotation angles are 90 ° and 270 °. The voltage A and the voltage B can be set such that the film formation rate at the voltage A is 22% with respect to the film formation rate at the voltage B.

  The flat region a1 at the point P1 has a film thickness of 2200 by multiplying the film thickness 100 (P1a1) by the film formation frequency 100 and the film formation rate ratio 0.22 at a rotation angle of 0 °. When the rotation angle is 90 °, the film thickness 100 (P1a1) is multiplied by the number of film formations 100 to obtain a film thickness of 10,000. At a rotation angle of 180 °, the film thickness 100 (P1a1) is multiplied by the number of film formations 100 and the film formation rate ratio 0.22 to obtain a film thickness 2200. At a rotation angle of 270 °, the film thickness 100 (P1a1) is multiplied by the number of film formations 100 to obtain a film thickness of 10,000.

  The first side surface region a2 at the point P1 has a film thickness 2640 obtained by multiplying the film thickness 120 (P1a2) by the film formation frequency 100 and the film formation rate ratio 0.22 at a rotation angle of 0 °. At a rotation angle of 90 °, the first side surface region a2 faces the direction orthogonal to the direction of the sputter cathode 4 (the direction of the point P5 in FIG. 9). Therefore, assuming that the film is formed to the same extent as the flat region a1 at the time of non-rotation, the film thickness 100 (P1a1) is multiplied by the number of film formations 100 to obtain a film thickness of 10,000. At a rotation angle of 180 °, the first side surface region a2 faces the direction opposite to the direction of the sputtering cathode 4 (the direction of the point P3 in FIG. 9). Therefore, assuming that the film is formed to the same extent as the second side surface region a3 at the time of non-rotation, the film thickness 45 (P1a3) is multiplied by the number of film formations 100 and the film formation rate ratio 0.22 to obtain a film thickness 990. At the rotation angle of 270 °, as in the case of the rotation angle of 90 °, the film thickness 100 (P1a1) is multiplied by the number of film formations 100 to obtain a film thickness of 10,000.

  The second side surface region a3 at the point P1 has a film thickness of 990 by multiplying the film thickness 45 (P1a3) by the film formation frequency 100 and the film formation speed ratio of 0.22 at a rotation angle of 0 °. At a rotation angle of 90 °, the second side surface region a2 faces the direction orthogonal to the direction of the sputter cathode 4 (the direction of the point P4 in FIG. 9). Therefore, assuming that the film is formed to the same extent as the flat region a1 at the time of non-rotation, the film thickness 100 (P1a1) is multiplied by the number of film formations 100 to obtain a film thickness of 10,000. At a rotation angle of 180 °, the first side surface region a2 faces the direction of the sputter cathode 4. For this reason, assuming that the film is formed to the same extent as the flat region a1 at the time of non-rotation, the film thickness 120 (P1a2) is multiplied by the number of film formations 100 and the film formation rate ratio 0.22 to obtain a film thickness 2640. At the rotation angle of 270 °, as in the case of the rotation angle of 90 °, the film thickness 100 (P1a1) is multiplied by the number of film formations 100 to obtain a film thickness of 10,000.

  Thus, regarding the point P1, the respective integrated film thicknesses are the film thickness 24400 for the flat region a1, the film thickness 23630 for the first side surface region a2, and the film thickness 23630 for the second side surface region a3.

  Subsequently, the point P2 will be examined. The point P2 moves to the position of the point P5 in FIG. 9 when the substrate W rotates by 90 °, and sequentially moves to the position of P3 at 180 ° and the position of P4 at 270 °. Accordingly, the flat region a1 has a film thickness of 3520 at the rotation angle of 0 ° by multiplying the film thickness 160 (P2a1) by the number of film formations 100 and the film formation rate ratio of 0.22. At the rotation angle of 90 °, the point P2 has moved to the position of the point P5, so that the film thickness 90 (P5a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000. At the rotation angle 180, since the point P2 has moved to the position of the point P3, the film thickness 55 (P5a1) is multiplied by the number of film formations 100 and the film formation speed ratio 0.22 to obtain a film thickness 1210. At the rotation angle of 270 °, the point P2 has moved to the position of the point P4, so that the film thickness 90 (P4a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000.

  The first side surface region a2 at the point P2 has a film thickness of 3740 at a rotation angle of 0 ° by multiplying the film thickness 170 (P2a2) by the number of film formations 100 and a film formation rate ratio of 0.22. At a rotation angle of 90 °, the first side surface region a2 faces the direction orthogonal to the direction of the sputter cathode 4. For this reason, assuming that the film is formed to the same extent as the flat region a1 at the position of the point P5 at the time of non-rotation, the film thickness 90 (P5a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000. At a rotation angle of 180 °, the first side surface region a2 faces in the direction opposite to the direction of the sputter cathode 4. For this reason, the film thickness 5 (P3a3) is multiplied by the number of film formation times 100 and the film formation speed ratio 0.22, assuming that the film is formed to the same extent as the second side surface region a2 at the position of the point P3 when not rotating. 110. At the rotation angle of 270 °, as in the case of the rotation angle of 90 °, the film thickness 90 (P4a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000.

  The second side surface region a3 at the point P2 has a film thickness of 1760 by multiplying the film thickness 80 (P2a3) by the film formation frequency 100 and the film formation rate ratio 0.22 at a rotation angle of 0 °. At a rotation angle of 90 °, the second side surface region a3 faces the direction orthogonal to the direction of the sputter cathode 4. For this reason, assuming that the film is formed to the same extent as the flat region a1 at the position of the point P5 at the time of non-rotation, the film thickness 90 (P5a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000. At a rotation angle of 180 °, the first side surface region a2 faces the direction of the sputter cathode 4. For this reason, the film thickness 90 (P3a2) is multiplied by the number of times of film formation 100 and the film formation speed ratio 0.22, assuming that the film is formed to the same extent as the first side surface region a2 at the position of the point P3 when not rotating. 1980. At the rotation angle of 270 °, as in the case of the rotation angle of 90 °, the film thickness 90 (P4a1) is multiplied by the number of film formations 100 to obtain a film thickness of 9000.

  Thus, regarding the point P2, the respective integrated film thicknesses are the film thickness 227300 for the flat region a1, the film thickness 21850 for the first side surface region a2, and the film thickness 21740 for the second side surface region a3.

  Hereinafter, the points P3, P4 and P5 can be calculated in the same manner as the point P2. In this way, the integrated film thickness of each region of the points P1 to P5 shown in FIG. 12 is calculated. When the film thickness distribution of all regions (standard deviation / average × 100) is calculated for this integrated film thickness, it is 6.91%. On the other hand, when the film thickness distribution of only the flat region a1 is calculated, it is 5.68%. Although the film thickness distribution of the flat region a1 is slightly lower than that in the case where the film is formed by simply rotating the substrate W shown in FIG. 11, the entire region including the first side region a2 and the second side region a3 is added. The film thickness distribution is improved.

  As described above, in the present embodiment, the power supply control unit 16 controls the sputter cathode 4 based on the rotation angle of the stage 3 detected by the detection unit 10, that is, the intersection angle between the first direction and the third direction. Then, the film forming speed is changed. Thereby, when the first direction and the third direction are orthogonal to each other and the film formation rate ratio is greatly different, the film formation rate itself is reduced and the formed film thickness is reduced. When the first direction and the third direction are parallel and the film formation rate ratio is the same, the film formation rate is not reduced and the films are formed uniformly. By repeatedly forming the film, the film thickness distribution can be improved as compared with the case where the film is formed without changing the film formation speed.

(Second Embodiment)
A sputtering apparatus according to the second embodiment of the present invention will be described.
Note that in the sputtering apparatus according to the present embodiment, the same reference numerals are given to the same components as those of the sputtering apparatus 1 according to the first embodiment, and the description thereof will be omitted.

[Configuration of sputtering equipment]
FIG. 13 is a schematic configuration diagram of a sputtering apparatus 20 according to the second embodiment of the present invention. In the present embodiment, the sputtering apparatus 20 is assumed to be a DC (Direct Current) sputtering apparatus, but is not limited thereto, and is not limited to this. It may be of a system.

  The sputtering apparatus 20 shown in the figure has a drive source control unit 21 instead of the power supply control unit 16 of the sputtering apparatus 1 according to the first embodiment. The drive source control unit 21 is connected to the drive source 8 and controls the rotational drive speed at which the drive source 8 rotationally drives the rotary shaft 7. At this time, the drive source control unit 21 controls the rotational drive speed based on the rotation angle of the rotation shaft 7 detected by the detection unit 10, that is, the rotation angle of the substrate W. Other configurations of the sputtering apparatus 20 and the structure of the substrate W are the same as those in the first embodiment.

[Operation of deposition system]
The operation of the sputtering apparatus 20 configured as described above will be described.
Similar to the first embodiment, the substrate W is placed on the stage 3 with the substrate transfer robot or the like so that the notch N faces the sputter cathode 4.

  After the inside of the chamber 2 is evacuated, a sputtering gas is introduced. Further, the substrate W is heated to a predetermined temperature by the heating source 5. When these preparations are completed, the rotary shaft 7 is rotationally driven by the drive source 8, and the substrate W placed on the stage 3 rotates. At this time, the rotation angle of the substrate W is detected by the detection unit 10.

  A voltage is applied between the substrate W and the target T by the power supply 15, and sputtering of the target T by the ionized sputtering gas is started. Particles (film formation particles) of the target material generated by sputtering are irradiated toward the substrate W, and are formed on the film formation surface of the substrate W.

  Here, the drive source control unit 21 controls the rotation drive speed of the drive source 8, that is, the rotation speed of the stage 3 in accordance with the rotation angle of the substrate W detected by the detection unit 10.

  FIG. 14 is a graph showing an example of the control of the rotational speed of the stage 3 (hereinafter, stage rotational speed) of the drive source control unit 21. As shown in the figure, the drive source control unit 21 sets the stage rotation speed to a speed (angular speed) v1 when the rotation angle of the stage 3 (substrate W) is not less than 0 ° and less than 30 °. When the rotation angle of the substrate W is not less than 60 ° and less than 120 °, the stage rotation speed is set to a speed v2 smaller than the speed v1. The rotation speed is reduced from the speed v1 to the speed v2 when the rotation angle is not less than 30 ° and less than 60 °. Similarly, when the rotation angle is 150 ° or more and less than 210 ° and 330 ° or more and less than 360 °, the velocity is v1, and when the rotation angle is 240 ° or more and less than 300 °, the velocity is v2. When the rotation angle is 120 ° or more and less than 150 ° and 300 ° or more and less than 330 °, the velocity v2 is accelerated to the velocity v1, and when the rotation velocity is 210 ° or more and less than 240 °, the velocity v1 is decreased to the velocity v2.

  In this way, the film formation speed varies as the drive source control unit 21 controls the drive speed at which the drive source 8 rotates the stage 3. Specifically, when the stage rotation speed is the speed v1, the region facing the sputter cathode 4 has a short time for facing the sputter cathode 4, so that the total deposition rate is reduced. On the other hand, when the stage rotation speed is the speed v2, the region facing the sputter cathode 4 has a long time facing the sputter cathode 4, so that the total deposition rate is increased.

[Effects of stage rotation speed control]
The effect of the drive source control unit 21 controlling the rotation speed of the stage 3 by the drive source control unit 21 as described above will be described using the model of the substrate W.

  As described above, the deposition surface of the substrate W has the flat region a1, the first side surface region a2, and the second side surface region a3 having different inclination angles with respect to the XY plane. For this reason, when the rotation position of the stage 3 is perpendicular to the first direction and the third direction, the difference in film deposition rate between the first side surface region a2 and the second side surface region a3 increases. On the other hand, when the first direction and the third direction are parallel, the deposition rates of the first side surface region a2 and the second side surface region a3 are the same. Here, the rotation speed of the stage 3 is controlled by the drive source control unit 21 shown in the present embodiment in accordance with the rotation angle of the stage 3, that is, the intersection angle between the first direction and the third direction. As a result, the film forming speed is reduced to reduce the film thickness difference when the film forming speed difference is large, and the film forming speed is not suppressed when the non-film forming speed difference is large. It becomes possible to form a film evenly. By repeatedly forming the film, it is possible to improve the film thickness distribution as compared with the case where the film is formed without controlling the stage rotation speed.

  The present invention is not limited only to the above-described embodiment, and can be changed within a range not departing from the gist of the present invention.

  In the above embodiment, the sputtering method is used as the film forming method, but the present invention can also be applied to other film forming methods.

DESCRIPTION OF SYMBOLS 1 ... Sputtering apparatus 3 ... Stage 4 ... Sputtering cathode 8 ... Drive source 10 ... Detection part 15 ... Power supply 16 ... Power supply control part 20 ... Sputtering apparatus 21 ... Drive source control part

Claims (6)

A film forming apparatus for forming a film on a film forming surface of a substrate having a film forming surface and having a concavo-convex structure formed along a first direction which is one direction on the film forming surface Because
A stage that supports the substrate and rotates about an axis perpendicular to the deposition surface;
Film-forming particles are generated from the film-forming material, and the film-forming particles are applied to the film-forming surface of the substrate supported by the stage from a second direction that is oblique to the film-forming surface. A film forming source to be irradiated; and
A detector for detecting a rotation angle of the stage;
Based on the detection result of the detection unit, the substrate on the stage is parallel to the first direction and a third direction in which the second direction is projected on the same plane as the film formation surface. The film formation source is controlled so that the film formation speed becomes the first film formation speed, and the substrate on the stage is perpendicular to the first direction and the third direction. And a film forming source control unit that controls the film forming source so that the film forming speed is a second film forming speed smaller than the first film forming speed. . The film forming apparatus according to claim 1,
The film forming source includes a sputtering cathode, and a voltage supply unit that supplies an applied voltage to the sputtering cathode,
The film forming source control unit controls a film forming speed by controlling the voltage supply unit. The film forming apparatus according to claim 2,
The film forming source control unit sets the applied voltage as the first voltage when the intersection angle between the first direction and the third direction is not less than 0 ° and less than 45 °, and the intersection angle is not less than 45 ° and not more than 90 °. When it is less than 0 °, the applied voltage is set to a second voltage lower than the first voltage. A film forming apparatus for forming a film on a film forming surface of a substrate having a film forming surface and having a concavo-convex structure formed along a first direction which is one direction on the film forming surface Because
A stage that supports the substrate and rotates about an axis perpendicular to the deposition surface;
Film formation particles are generated from the film formation material, and the film formation surface of the substrate supported by the stage is irradiated with the film formation particles from a second direction that is oblique to the film formation surface. A film forming source to
A detector for detecting a rotation angle of the stage;
Based on the detection result of the detection unit, the substrate on the stage is parallel to the first direction and a third direction in which the second direction is projected on the same plane as the film formation surface. The rotation angle is such that the stage is controlled so that the rotation speed becomes the first rotation speed, and the substrate on the stage is perpendicular to the first direction and the third direction. In this case, a film forming apparatus comprising: a stage control unit that controls the stage so that the rotation speed becomes a second rotation speed higher than the first rotation speed. A film forming method for forming a film on a film formation surface of a substrate having a film formation surface and having a concavo-convex structure formed along a first direction which is one direction on the film formation surface. And
Place the substrate on a stage and rotate the stage around an axis perpendicular to the film formation surface,
A film forming source generates film forming particles from a film forming material, and the film forming surface of the substrate supported by the stage is moved from a second direction that is oblique to the film forming surface. Irradiate film-forming particles,
When the first direction and the third direction in which the second direction is projected on the same plane as the film formation surface are parallel to the film formation source control unit, the film formation speed is the first. When the film-forming source is controlled so that the film-forming speed is equal to the first film-forming speed, and the first direction and the third direction are perpendicular to each other, the film-forming speed is a second smaller than the first film-forming speed. The film-forming method which controls the said film-forming source so that it may become the film-forming speed of. A film forming method for forming a film on a film formation surface of a substrate having a film formation surface and having a concavo-convex structure formed along a first direction which is one direction on the film formation surface. And
Place the substrate on a stage and rotate the stage around an axis perpendicular to the film formation surface,
A film forming source generates film forming particles from a film forming material, and the film forming surface of the substrate supported by the stage is moved from a second direction that is oblique to the film forming surface. Irradiate film-forming particles,
When the stage controller is parallel to the first direction and the third direction in which the second direction is projected on the same plane as the film formation surface, the rotational speed is the first rotational speed. When the stage is controlled so that the first direction and the third direction are perpendicular to each other, the rotation speed is set to be a second rotation speed higher than the first rotation speed. Deposition method that controls the stage.

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