JP2011233703A - Electronic component package and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent gas generated when a pair of sealing members for hermetically sealing electrodes of an electronic component element is jointed by heating and dissolution of the brazing material, from enter the inner space formed by the joint of the brazing material.SOLUTION: In an electronic component package, first and second sealing member 4 and 6 for hermetically sealing electrodes 31 and 32 of an and electronic component element 2 are jointed on the outer peripheral edge (joint parts 442 and 611) of each one principal surface using a jointing material 72 including a brazing material. At least one of the outer peripheral edges 611 of the first and second sealing members 4 and 6 is adapted to become tapered surface inclined from the one principal surface 61 of the sealing member 6 toward the side of the other principal surface 62.

Description

  The present invention relates to an electronic component package that hermetically seals an electrode of an electronic component element, and a method for manufacturing the electronic component package.

  The internal space of the electronic component package is hermetically sealed to prevent deterioration of the characteristics of the electrodes of the electronic component element mounted in the internal space. As an electronic component package in which such an internal space is hermetically sealed, for example, a package of a piezoelectric vibration device such as a crystal resonator can be cited.

  As this type of electronic component package, there is one in which it is constituted by two sealing members such as a base and a lid, and its casing is constituted by a rectangular parallelepiped package. In such an internal space of the package, an electronic component element such as a piezoelectric vibrating piece is held and bonded to the base. The electrodes of the electronic component elements in the internal space of the package are hermetically sealed by joining the base and the lid. For example, Patent Literature 1 discloses a piezoelectric vibration device in which a base and a lid are joined with a brazing material.

  Hereinafter, the joining of the base and the lid in the piezoelectric vibration device according to the conventional example disclosed in Patent Document 1 will be described with reference to FIG.

  On the base material of the base 400, for example, a laminated body 402 in which, for example, a Mo layer, a Ni layer, and an Au layer are sequentially laminated on the outer peripheral edge portion of the one main surface 401 arranged to face the lid 600. It is arranged. In addition, a brazing material 602 containing an AuSn alloy is disposed on the outer peripheral edge of one main surface 601 on the side facing the base 400 on the base material of the lid 600.

  In the base 400 and the lid 600 having such a configuration, as shown in FIG. 6A, the lid 600 is arranged on the base 400 so that the brazing material 602 overlaps the laminated body 402. In this state, by heating the laminated body 402 and the brazing material 602, the laminated body 402 and the brazing material 602 are melted to form the bonding material 700, and as shown in FIG. 600 is bonded via a bonding material 700.

JP 2009-55283 A

  By the way, when the brazing material is heated and melted, gas is generated. When the gas generated here enters the internal space of the package of the piezoelectric vibrating device, the electrodes of the electronic component elements such as the piezoelectric vibrating piece deteriorate, and the CI value (series equivalent resistance) deteriorates and the aging characteristic is caused by the passage of time. Frequency variation occurs.

  In the piezoelectric vibration device according to the conventional example described above, the outer peripheral edge 403 where the laminated body 402 of the base 400 is disposed and the outer peripheral edge 603 where the brazing material 602 of the lid 600 is disposed are formed in parallel. For this reason, when the brazing material 602 is heated and melted, the melt of the brazing material 602 moves along the surface direction of the main surface 601 of the lid 600. That is, since the melt of the brazing material 602 flows in the inner direction D2, gas generated by heating and melting of the brazing material 602 easily enters the internal space of the piezoelectric vibration device (see FIG. 6B). Therefore, there is a possibility that a large amount of gas that causes deterioration of the electrode of the electronic component element such as the piezoelectric vibrating piece exists in the inner space of the piezoelectric vibrating device according to the conventional example.

  The present invention has been made in view of such a situation, and in an electronic component package in which two sealing members that hermetically seal electrodes of an electronic component element are bonded by a bonding material including a brazing material. An electronic component package configured such that gas generated when the brazing filler metal is heated and melted in the manufacturing process of the electronic component package is difficult to enter the hermetically sealed internal space, and such an electronic component package An object is to provide a manufacturing method.

  In order to achieve the above object, an electronic component package according to the present invention is an electronic component package that hermetically seals an electrode of an electronic component element. The first and second seals hermetically seal the electrode of the electronic component element. The outer peripheral edge portion of one main surface of each of the first and second sealing members is joined with a joining material including a brazing material, and the first and second sealing members At least one of the outer peripheral edge portions is a tapered surface inclined from the one main surface of the sealing member toward the other main surface.

  According to this configuration, since the outer peripheral edge of at least one sealing member among the first and second sealing members joined to each other at the outer peripheral edge of one main surface is a tapered surface, By this tapered surface, the gap between the outer peripheral edge portions of the first and second sealing members is expanded outward. As described above, the gap between the outer peripheral edge portions of the first and second sealing members is widened toward the outside by the taper surface, so that the gas generated by the heat melting of the brazing material is directed toward the outside of the package. Easily released into A meniscus of a bonding material including a brazing material is formed between the outer peripheral edges of the first and second sealing members. When the outer peripheral edge of at least one of the sealing members is a tapered surface, the meniscus is formed. Since the meniscus having a large surface area can be formed, the gas can escape from the surface of the meniscus to the outside of the package. Thus, according to the above-described configuration, the gas generated when the brazing material is heated and melted can be released to the outside of the package, making it difficult to enter the hermetically sealed internal space. It can be set as the electronic component package by which the gas amount in space was suppressed.

  In the electronic component package according to the present invention, a boundary line between the tapered surface and another surface continuously formed on the tapered surface is formed at a corner of the one main surface in which the outer peripheral edge portion is a tapered surface. It may be formed in an arc shape.

  In this configuration, the boundary line between the tapered surface and the other surface formed continuously with the tapered surface is formed in an arc shape at the corner of one main surface having the outer peripheral edge portion tapered. When the brazing material is heated and melted, the melt of the brazing material can be spread over almost the entire tapered surface. Specifically, for example, when a corner exists at the boundary line between the tapered surface and the other surface formed continuously with the tapered surface, the melt of the brazing material disposed on the tapered surface Since it is pulled toward the boundary line and the melt of the brazing material is insufficient at the corner, it is difficult to spread the melt of the brazing material over almost the entire tapered surface. However, in the above configuration, the corner of the boundary line is formed in an arc shape, and since the boundary line has no corner, the melt of the brazing material disposed on the tapered surface is pulled toward the boundary line. There is no. For this reason, the melt of the brazing material can be spread over almost the entire outer peripheral edge of the sealing member. Therefore, the joining strength between the sealing members can be improved.

  In the electronic component package according to the present invention, each of the first and second sealing members has a rectangular shape in plan view, and is formed on the outer peripheral edge of each of the first and second sealing members. Is provided with a bonding layer forming region in which a bonding layer constituting a part of the bonding material is formed, and the bonding layer forming region includes a short side region having a width in a long side direction of the one main surface. The long side region may have a width in the short side direction of the one main surface and have the same area as the short side region.

  According to this configuration, when both the first and second sealing members have a rectangular shape in plan view, the bonding layer forming region provided in the outer peripheral edge portion of the first and second sealing members is The short side region having a width in the long side direction of the one main surface and the long side region having a width in the short side direction of the one main surface, and the short side region and the long side region have an area. Are equal. For example, when a larger amount of brazing material is disposed toward the long side region than the short side region of the bonding layer formation region, the tension of the brazing material (including surface tension) is reduced between the short side region and the long side region. The melt of the brazing material disposed in the short side region is not kept equally between the two, and is pulled toward the long side region having a large amount of brazing material and high tension. In the above-described configuration, since the short side region and the long side region have the same area in the bonding layer formation region, by forming the bonding layer with a uniform thickness in the bonding layer formation region, An equal amount of brazing material can be arranged in the short side region and the long side region. By arranging an equal amount of brazing material in the short side region and the long side region, the tension of the melt of the brazing material is kept equal between the short side region and the long side region. When the brazing material is heated and melted, the melt of the brazing material disposed in the short side region is not pulled toward the long side region. That is, when the brazing material is heated and melted, the melt of the brazing material disposed in the short side region remains in the short side region, and the melt of the brazing material disposed in the long side region remains in the long side region. The bonding strength between the sealing members is not partially reduced, and the bonding strength is kept uniform in the entire region within the outer peripheral edge.

  An electronic component package manufacturing method according to the present invention is an electronic component package manufacturing method for hermetically sealing an electrode of an electronic component element, the molding step of molding first and second sealing members, A bonding layer forming step of forming a bonding layer in a bonding layer forming region provided in the outer peripheral edge of each of the first and second sealing members; and the electronic component element on the first sealing member. A mounting step of mounting, forming a bonding material containing a brazing material by heating and melting the bonding layer, and bonding an outer peripheral edge of one main surface of each of the first and second sealing members; A bonding step of hermetically sealing the electrodes of the electronic component element, and in the molding step, at least one of the outer peripheral edge portions of the first and second sealing members is moved to the one of the sealing members. Molded into a tapered surface inclined from the main surface toward the other main surface. The features.

  According to this method, when molding the first and second sealing members in the molding step, at least one outer peripheral edge portion of the first and second sealing members is molded into a tapered surface. A gap formed between the outer peripheral edges when the first and second sealing members are overlapped can be expanded outward. As described above, the gap between the outer peripheral edge portions of the first and second sealing members is widened outwardly by the tapered surface, so that the gas generated by the heat melting of the brazing material is directed toward the outer side of the package. Easily released into Further, by melting the bonding layer in the bonding step, a meniscus of the bonding material including the brazing material is formed between the outer peripheral edges of the first and second sealing members. In the forming step, the meniscus between the outer peripheral edges of the first and second sealing members is formed by forming the outer peripheral edge of at least one of the first and second sealing members into a tapered surface. Since the formation region can be expanded, a meniscus having a large surface area can be formed in the bonding process, and gas can be released from the surface of the meniscus to the outside of the package. As described above, according to the above-described method, when the sealing members are joined to each other in the joining process, the gas generated by heating and melting of the brazing material can be made difficult to flow in the inner direction of the sealing member. An electronic component package in which the amount of gas in the space is suppressed can be manufactured.

  In the method for manufacturing an electronic component package according to the present invention, in the forming step, the first and second sealing members are each formed into a rectangular shape in plan view, and in the bonding layer forming step, the one main surface is formed. Uniform in the bonding layer forming region comprising a short side region having a width in the long side direction and a long side region having a width in the short side direction of the one main surface and the same area as the short side region. The bonding layer may be formed with a sufficient thickness.

  According to this method, when the first and second sealing members having a rectangular shape in plan view are molded, the short side region having a width in the long side direction of the main surface and the width in the short side direction of the main surface. The bonding layer is formed with a uniform thickness in the bonding layer forming region comprising the long side region having the same area as that of the short side region. Therefore, an amount of brazing material equal to the short side region and the long side region is formed. Can be arranged. By arranging an equal amount of brazing material in the short side region and the long side region, the tension of the melt of the brazing material can be kept equal between the short side region and the long side region. When the brazing material is heated and melted, the melt of the brazing material disposed in the short side region can be prevented from being pulled toward the long side region. That is, in the joining process, the brazing material melt disposed in the short side region is retained in the short side region, the brazing material melt disposed in the long side region is retained in the long side region, and the sealing members are joined together. Since it can be bonded, it is possible to prevent the bonding strength between the sealing members from partially decreasing in the finished product of the electronic component package, and to keep the bonding strength uniform in the entire region within the outer peripheral edge. Can do.

  According to the present invention, in the electronic component package in which the two sealing members that hermetically seal the electrodes of the electronic component element are joined by the joining material made of the brazing material, the soldering process is performed in the electronic component package. It is possible to provide an electronic component package in which a gas generated when a material is heated and melted is difficult to enter the hermetically sealed internal space, and a method for manufacturing such an electronic component package.

FIG. 1 is a schematic cross-sectional view showing the internal space of a crystal resonator according to an embodiment of the present invention. 2 is a schematic diagram showing a schematic configuration of the base of the crystal unit shown in FIG. 1, FIG. 2 (a) is a schematic plan view showing a schematic configuration of the base, and FIG. 2 (b) is a schematic diagram of the base. It is a schematic sectional drawing which shows schematic structure. 3 is a schematic diagram showing a schematic configuration of the lid of the crystal unit shown in FIG. 1, FIG. 3 (a) is a schematic bottom view showing a schematic configuration of the lid, and FIG. 3 (b) is a diagram of the lid. It is a schematic sectional drawing which shows schematic structure. FIG. 4 is a schematic bottom view of the crystal resonator element of the crystal unit shown in FIG. FIG. 5 is a schematic cross-sectional view showing the internal space of a crystal resonator according to another embodiment of the present invention. FIG. 6 is an explanatory diagram for explaining a configuration of a joint portion of a crystal resonator according to a conventional example. FIG. 6A shows a state of the joint portion when a lid is arranged on the base of the crystal resonator. FIG. 6B is an enlarged partial view showing the state of the joint after the brazing filler metal and the laminate are heated and melted in the state shown in FIG. 6A. FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the present invention is applied to a package of a crystal resonator that is a piezoelectric vibration device as an electronic component package, and further to an AT-cut crystal vibration piece that is a piezoelectric vibration piece as an electronic component element. The case where is applied is shown.

  As shown in FIG. 1, the crystal resonator 1 according to the present embodiment holds a crystal vibrating piece 2 (an electronic component element referred to in the present invention) made of an AT-cut crystal and the crystal vibrating piece 2. A base 4 (first sealing member in the present invention) for hermetically sealing the resonator element 2, an excitation electrode 31 of the crystal resonator element 2 disposed so as to face the base 4 and held by the base 4, A lid 6 (second sealing member according to the present invention) for hermetically sealing 32 (electrode of the electronic component element according to the present invention) is provided.

  In the crystal unit 1, the base 4 and the lid 6 are joined by a joining material 72 including a brazing material made of an alloy of Au and Sn, thereby forming a main body housing including an airtightly sealed internal space 11. The In the internal space 11, the crystal vibrating piece 2 is ultrasonically bonded to the base 4 by an FCB method (Flip Chip Bonding) using conductive bumps (not shown). In the present embodiment, plated bumps of non-fluid members such as gold bumps are used as the conductive bumps.

  Next, each configuration of the crystal resonator 1 will be described.

  The base 4 is made of a glass material such as borosilicate glass, and as shown in FIGS. 1 and 2, the bottom 41 and a wall portion extending upward from the bottom 41 along the outer periphery of one main surface 42 of the base 4. 44 is formed into a box-like body. The base 4 is formed by etching a single rectangular parallelepiped plate by a photolithography method.

  The outer peripheral edge portion of the top surface of the wall portion 44 of the base 4, that is, the portion facing the outer peripheral edge portion (joining portion 611) that is a tapered surface of the lid 6, which will be described later, is a joining portion 442 with the lid 6. Yes. In addition, a temporary fixing portion 443 arranged in parallel with a temporary fixing portion 612 of the lid 6 to be described later is provided adjacent to the joint portion 442 on the top surface.

  The base material of the base 4 is provided with a first bonding layer formation region at a portion to be the bonding portion 442 and the temporary fixing portion 443, and the lid 6 and the entire first bonding layer formation region are provided. A first bonding layer 45 for bonding is formed with a uniform thickness.

  As shown in FIG. 2A, the first bonding layer forming region has a short side region T1 having a width W1 in the long side direction L4 of the main surface 42 and a width W2 in the short side direction L5 of the main surface 42. It consists of a long side region T2. Note that the short-side region T1 and the long-side region T2 are regions P1 where the long-side direction L4 and the short-side direction L5 intersect (regions having the width W1 and the width W2 as two sides in FIG. 2A). The short side region T1 and the long side region T2 overlap each other and include the overlapping region P1.

  In such a first bonding layer formation region, the area of the short side region T1 is equal to the area of the long side region T2.

  As shown in FIG. 2, the first bonding layer 45 has a multilayer structure in which an Au sputtered film 452 and an Au plated film 453 are formed on a Ti sputtered film 451. The Ti sputtered film 451 is formed on the base 4 base material by sputtering Ti. The Au sputtered film 452 is formed on the Ti sputtered film 451 by sputtering Au. Further, the Au plating film 453 is formed by plating Au on the Au sputtering film 452.

  In the base material of the base 4, the first bonding layer 45 is provided with a uniform thickness over the entire short side region T1 and the long side region T2 (that is, the first bonding layer forming region). The amount of Ti and Au in T1 is equal to the amount of Ti and Au in the long side region T2.

  In addition, the base 4 is formed with a cavity 46 surrounded by the bottom 41 and the wall 44. The cavity 46 is formed in a rectangular shape in plan view as shown in FIG. 2, and the wall surface of the cavity 46 is tapered. Formed on the surface. In the present embodiment, the cavity 46 is formed in a rectangular shape in plan view.

  In addition, two base parts 411 and 412 are provided on the bottom surface 461 of the cavity 46 so as to face each other in the short side direction of the cavity 46. The pedestal portions 411 and 412 are in contact with the side L1 in the short side direction of the bottom surface 461 of the cavity 46, and are in contact with the side L2 and L3 in the long side direction adjacent to the side in the short side direction. .

  Further, castellations 47 and 48 are formed on the bottom surface (other main surface 43) of the base 4 having a rectangular shape in plan view (see FIGS. 1 and 2). The castellations 47 and 48 are formed on the side surface of the casing, and are formed along both ends of both sides in the long side direction of the other main surface 43 and both sides in the short side direction adjacent to these ends. Yes.

  Further, as shown in FIGS. 1 and 2, the base 4 is formed with a through hole 49 that penetrates the base material of the base 4. An inner side surface 491 of the through hole 49 is inclined with respect to the one main surface 42 and the other main surface 43 of the base 4 and is formed into a tapered surface. The through hole 49 has the largest diameter at the other end of the through hole 49 on the other main surface 43 side of the base 4 and the smallest diameter at one end of the through hole 49 on the one main surface 42 side of the base 4. . The inside of the through hole 49 is plated and filled with a conductive metal 56 such as Au.

  In addition, the base material of the base 4 includes a pair of electrode pads 51 and 52 that are electromechanically bonded to the excitation electrodes 31 and 32 of the crystal vibrating piece 2 and external terminals that are electrically connected to external components and external devices. Electrodes 53 and 54, electrode pads 51 and external terminal electrodes 53, and wiring patterns (not shown) that electrically connect electrode pads 52 and external terminal electrodes 54 are formed. The electrode pads 51 and 52 are formed on the surfaces of the pedestals 411 and 412, and the external terminal electrodes 53 and 54 are formed on the castellations 47 and 48. The wiring pattern is formed from the electrode pads 51 and 52 on the one main surface 42 of the base 4 to the external terminal electrodes 53 and 54 on the other main surface 43 through the through holes 49.

  The electrode pads 51 and 52, the external terminal electrodes 53 and 54, and the wiring pattern are formed of a Ti sputtered film obtained by sputtering Ti on the base material of the base 4 and the Ti pattern as in the first bonding layer 45. The sputtered film includes an Au sputtered film obtained by sputtering Au and an Au plated film obtained by plating Au on the Au sputtered film, and is formed simultaneously with the first bonding layer 45.

  As shown in FIG. 3, the lid 6 is formed by etching the outer peripheral edge of a single rectangular parallelepiped plate made of a glass material such as borosilicate glass by a photolithography method or the like.

  An outer peripheral edge portion of one main surface 61 (lower surface) of the lid 6 is a bonding portion 611 bonded to the bonding portion 442 of the base 4 by the bonding material 72 and extends from the main surface 61 to the other main surface 62 (back surface). It is formed to be a tapered surface inclined toward the side.

  Further, at the corner of one main surface 61 of the lid 6, a taper surface (surface formed as the joint portion 611) and another surface formed continuously with the taper surface, that is, an inner peripheral portion of the main surface 61 are provided. A boundary line B with the surface to be configured (the surface defined as the temporary fixing portion 612 in the present embodiment) is formed in an arc shape. Hereinafter, this arc-shaped portion is referred to as an inner peripheral corner C1.

  In addition, a temporary fixing portion 612 disposed in parallel with the temporary fixing portion 443 of the base 4 is provided on the main surface 61 of the lid 6 adjacent to the joint portion 611.

  Further, the base material of the lid 6 is provided with a second bonding layer forming region at the portion to be the bonding portion 611 and the temporary fixing portion 612, and the base 4 and the entire second bonding layer forming region are provided. A second bonding layer 64 for bonding is formed with a uniform thickness.

  As shown in FIG. 3A, the second bonding layer forming region has a short side region T3 having a width W3 in the long side direction L6 of the main surface 61 and a width W4 in the short side direction L7 of the main surface 61. It consists of a long side region T4. The short side region T3 and the long side region T4 are regions P2 where the long side direction L6 and the short side direction L7 intersect (regions having width W3 and width W4 as two sides in FIG. 3A). The short side region T3 and the long side region T4 overlap each other and include the overlapping region P2.

  Further, as described above, the inner peripheral corner portion C1 of the main surface 61 is formed in an arc shape, and the region P2 in which the short side region T3 and the long side region T4 overlap has a rounded shape in a side view. . That is, no ridge is formed in the region P2 where the short side region T3 and the long side region T4 overlap.

  In such a second bonding layer formation region, the area of the short side region T3 is equal to the area of the long side region T4.

  As shown in FIG. 3B, the second bonding layer 64 of the lid 6 has an Au sputtered film 642, an Au / Sn plated film 643, and an Au plated film 644 formed on the Ti sputtered film 641. It has a laminated structure of a plurality of layers.

  Here, the Ti sputtered film 641 is formed on the base material of the lid 6 by sputtering Ti. The Au sputtered film 642 is formed on the Ti sputtered film 641 by sputtering Au. The Au / Sn film 643 is composed of an Au film laminated on the Au sputtered film 642 and a Sn film plated on the Au film. Further, the Au plating film 644 is composed of an Au strike plating film formed by plating on the Au / Sn film 643 and an Au plating film formed by plating on the Au strike plating film. Yes. In such a second bonding layer 64, the Au / Sn film 643 is melted by heating to become an AuSn alloy (brazing material) film. The Au / Sn film 643 may be configured by plating an AuSn alloy on the Au sputtered film 642.

  In the base material of the lid 6, the second bonding layer 64 is provided with a uniform thickness over the entire short side region T3 and long side region T4 (that is, the second bonding layer forming region) having the same area. The amounts of Ti, Sn, and Au in the short side region T3 are equal to the amounts of Ti, Sn, and Au in the long side region T4.

  The quartz crystal resonator element 2 is composed of an AT-cut quartz crystal substrate 21, and the outer shape thereof is, as shown in FIGS. 1 and 4, a single plate cuboid in which both main surfaces 22 and 23 are formed in a substantially rectangular shape. It has become.

  The crystal vibrating piece 2 is provided with a vibrating portion 26 that constitutes a vibrating region, and a bonding portion 27 that is bonded to the electrode pads 51 and 52 of the base 4. The vibrating portion 26 and the bonding portion 27 are integrally formed. A substrate 21 is configured. Further, in the joint portion 27, the central portion 24 of the short side in plan view of the substrate 21 is cut out.

  The quartz crystal resonator element 2 includes a pair of excitation electrodes 31 and 32 that perform excitation, a pair of terminal electrodes 33 and 34 that are electromechanically joined to the electrode pads 51 and 52 of the base 4, and a pair of excitation electrodes 31 and 32. Lead electrodes 35 and 36 are formed to lead 32 to a pair of terminal electrodes 33 and 34. The pair of excitation electrodes 31 and 32 are routed by extraction electrodes 35 and 36 and electrically connected to the pair of terminal electrodes 33 and 34, respectively.

  The pair of excitation electrodes 31 and 32 are formed on both main surfaces 22 and 23 of the substrate 21 so as to face the center of the vibrating portion 26 in plan view. The pair of excitation electrodes 31 and 32 is constituted by, for example, a Cr—Au film formed by laminating Cr and Au in this order from the substrate 21 side.

  The pair of terminal electrodes 33 and 34 are formed on the other main surface 23 of the joint portion 27. Of the pair of terminal electrodes 33, 34, one terminal electrode 33 is formed in the vicinity including one side of the long side direction of the substrate 21, and the other terminal electrode 34 is in the vicinity including the other side in the long side direction. Is formed. The pair of terminal electrodes 33 and 34 is constituted by, for example, a Cr—Au film formed by laminating Cr and Au in this order from the substrate 21 side, similarly to the excitation electrodes 31 and 32. The pair of terminal electrodes 33 and 34 has a two-layer structure composed of an upper layer and a lower layer. The upper layer is made of Au and the lower layer is made of Cr—Au. The area of the lower principal surface (plan view surface) is larger than the area of the upper principal surface (plan view surface).

  The extraction electrodes 35 and 36 are formed on the vibration part 26 and the joint part 27, and are formed on both main surfaces 22 and 23 of the substrate 21 from the vibration part 26 to the joint part 27 without facing each other. These extraction electrodes 35 and 36 are composed of, for example, a Cr—Au film formed by laminating Cr and Au in this order from the substrate 21 side, similarly to the excitation electrodes 31 and 32.

  The crystal resonator 1 having the above-described configuration is manufactured by the following method. That is, first, the base 4 and the lid 6 are formed (a forming step referred to in the present invention). Further, the first bonding layer 45 is formed in the first bonding layer forming region of the base material of the base 4 and the second bonding layer 64 is formed in the second bonding layer forming region of the base material of the lid 6 (the bonding layer referred to in the present invention). Forming step). Then, as shown in FIG. 1, the crystal vibrating piece 2 is electromechanically ultrasonically bonded to the base 4 by the FCB method via a conductive bump (not shown), and the crystal vibrating piece 2 is mounted on the base 4 ( Mounting step in the present invention). As a result, the excitation electrodes 31 and 32 of the crystal vibrating piece 2 are electromechanically joined to the electrode pads 51 and 52 of the base 4 via the extraction electrodes 35 and 36, the terminal electrodes 33 and 34, and the conductive bumps. Then, the temporary fixing portion 612 of the lid 6 is bonded to the temporary fixing portion 443 of the base 4 on which the crystal vibrating piece 2 is mounted by the FCB method, and the lid 6 is temporarily bonded to the base 4. Next, heat treatment is performed in a nitrogen atmosphere, and a part of the first bonding layer 45 (mainly the Au sputtered film 452 and the Au plating film 453) and a part of the second bonding layer 64 (mainly the Au sputtered film 642). , Au / Sn plating film 643 and Au plating film 644) are melted. By this melting, a bonding material 72 is formed, and the bonding portion 442 of the base 4 and the bonding portion 611 of the lid 6 are bonded via the bonding material 72 as shown in FIG. Excitation electrodes 31 and 32 are hermetically sealed (joining step in the present invention). As a result, the crystal resonator 1 in which the crystal resonator element 2 is hermetically sealed is manufactured.

  In such a crystal unit 1, since the joint portion 611 of the lid 6 has a tapered surface, when the lid 6 is superimposed on the base 4 in the manufacturing process (for example, when the lid 6 is temporarily joined to the base 4). ), A gap formed between the joint portion 442 of the base 4 and the joint portion 611 of the lid 6 is widened in the outer direction D1. For this reason, the gas generated when the heat treatment is performed and a part of the first bonding layer 45 and a part of the second bonding layer 64 are melted is easily released in the outer direction D1. Further, since the surface area of the meniscus 721 of the bonding material 72 is ensured by making the bonding portion 611 of the lid 6 a tapered surface, gas easily escapes from the surface of the meniscus to the outside of the crystal unit 1. As described above, in the above-described crystal resonator 1, the gas generated when the first bonding layer 45 and the second bonding layer 64 are heated and melted in the manufacturing process escapes to the outside of the crystal resonator 1, so Since it is difficult to enter the space 11, the amount of gas in the internal space 11 in which the excitation electrodes 31 and 32 of the crystal vibrating piece 2 are hermetically sealed is suppressed.

  Further, as shown in FIG. 3, the inner peripheral corner portion C <b> 1 of the main surface 61 is formed in an arc shape, so that the melt of the second bonding layer 64 formed in the bonding portion 611 is the boundary line B. It will not be pulled towards. That is, since the melt of the second bonding layer 64 is distributed over almost the entire surface of the bonding portion 611 of the lid 6, the bonding strength between the lid 6 and the base 4 is sufficiently ensured.

  Further, the base material of the base 4 is provided with a first bonding layer forming region including a short side region T1 and a long side region T2 having the same area as the short side region T1, and the first bonding layer forming region. The first bonding layer 45 is uniformly formed on the entire surface. That is, equal amounts of Ti and Au are arranged in the short side region T1 and the long side region T2. Therefore, when the first bonding layer 45 is melted, the tension of the melt of the first bonding layer 45 is kept equal between the short side region T1 and the long side region T2, and is arranged in the short side region T1. The melt of the first bonding layer 45 is not pulled toward the long side region T2. That is, when the first bonding layer 45 is heated and melted, the melt of the first bonding layer 45 formed in the short side region T1 is retained in the short side region T1 and the first bonding layer 45 formed in the long side region T2. Can be kept in the long side region T2. Similarly, the base material of the lid 6 is provided with a second bonding layer forming region including a short side region T3 and a long side region T4 having the same area as the short side region T3. The second bonding layer 64 is formed uniformly over the entire region. That is, equal amounts of Ti, Au, and Sn are disposed in the short side region T3 and the long side region T4. For this reason, when the second bonding layer 64 is melted, the tension of the melt of the second bonding layer 64 is kept equal between the short side region T3 and the long side region T4 and is arranged in the short side region T3. The melt of the second bonding layer 64 is not pulled toward the long side region T4. Therefore, when the second bonding layer 64 is heated and melted, the melt of the second bonding layer 64 formed in the short side region T3 is retained in the short side region T3, and the second bonding layer 64 formed in the long side region T4. Can be kept in the long side region T4. Therefore, the bonding strength between the lid 6 and the base 4 is not partially reduced, and the bonding strength is kept uniform in the entire region within the bonding portions 442 and 611.

  In the crystal unit 1 shown in FIG. 1, as described above, in the first bonding layer 45, the short side region T1 and the long side region T2 have the same area, but the melt of the first bonding layer 45 The tension can be kept substantially equal between the short side region T1 and the long side region T2, and the melt of the first bonding layer 45 formed in the short side region T1 is retained in the short side region T1, and the long side region T2 The short side region T1 and the long side region T2 may have slightly different areas as long as the melt of the first bonding layer 45 formed in the above can be kept in the long side region T2. Similarly, in the second bonding layer 64, the tension of the melt of the second bonding layer 64 can be kept substantially equal between the short side region T3 and the long side region T4, and the second bonding layer 64 formed in the short side region T3. If the melt of the bonding layer 64 can be retained in the short side region T3 and the melt of the second bonding layer 64 formed in the long side region T4 can be retained in the long side region T4, the short side region T3 and the long side region T3 can be used. The area may be slightly different from the side region T4. In other words, in the present invention, the area of the long side region of the bonding layer forming region may be substantially equal to the area of the short side region even if it does not completely match the area of the short side region.

  Further, in the crystal unit 1 shown in FIG. 1, the joint portion 611 of the lid 6 has a tapered surface, and the joint portion 442 of the base 4 has a horizontal surface, but the joint portion 442 of the base 4 has a tapered surface, Even if the joint portion 611 of the lid 6 is a horizontal plane, the gap between the joint portion 442 of the base 4 and the joint portion 611 of the lid 6 is widened toward the outer side direction D1. The same effect as the crystal resonator 1 shown in FIG.

  Moreover, as shown in FIG. 5, both the junction part 611 of the lid | cover 6 and the junction part 442 of the base 4 may be made into a taper surface. In the crystal resonator 1 shown in FIG. 5 as well, the gap between the joint portion 442 of the base 4 and the joint portion 611 of the lid 6 is expanded toward the outer direction D1. For this reason, similarly to the quartz crystal resonator 1 shown in FIG. 1, the gas generated by heating and melting the brazing material is easily released in the outer direction D1. Furthermore, since the surface area of the meniscus 721 of the bonding material 72 is ensured by making the bonding portion 611 of the lid 6 and the bonding portion 442 of the base 4 into a tapered surface, gas flows from the surface of the meniscus of the crystal unit 1 Easy to escape to the outside. As described above, the crystal unit 1 shown in FIG. 5 also has a gas generated when the first bonding layer 45 and the second bonding layer 64 are heated and melted in the manufacturing process, similarly to the crystal unit 1 shown in FIG. However, the gas in the internal space 11 in which the excitation electrodes 31 and 32 of the crystal vibrating piece 2 are hermetically sealed is configured to escape to the outside of the crystal resonator 1 and hardly enter the internal space 11 inside. The amount is suppressed.

  Further, in the crystal unit 1 shown in FIGS. 1 and 5, the temporary fixing portions 443 are respectively attached to the base 4 and the lid 6 so that the lid 6 can be temporarily joined to the base 4 before the heat treatment. , 612 and the temporary fixing portions 443, 612 are provided with the first bonding layer 45 and the second bonding layer 64 in the same manner as the bonding portions 442, 611, but these temporary fixing portions 443, 612 are provided. The widths W6 and W8 (see FIGS. 2B and 3B) are preferably made as narrow as possible compared with the widths W5 and W7 of the joint portions 442 and 611. Or these temporary fix | stop parts 443 and 612 do not need to be provided. That is, the first bonding layer 45 may be provided only at the bonding portion 442 of the base 4, and the second bonding layer 64 may be provided only at the bonding portion 611 of the lid 6.

  For example, in the crystal unit 1 shown in FIG. 1, only the joining part 611 of the lid 6 having a tapered surface and the joining part 442 of the base 4 may be joined by the joining material 72, and the quartz crystal shown in FIG. In the vibrator 1, only the joining portion 611 of the lid 6 having a tapered surface and the joining portion 442 of the base 4 having a tapered surface may be joined by the joining material 72. 1 and 5, the melt of the first bonding layer 45 and the second bonding layer 64 laminated on the temporary fixing portions 443 and 612 provided in parallel flows in the inner direction, and a small amount There is a risk of gas entering the internal space. However, in the crystal unit 1 in which only the bonding portion 611 of the lid 6 and the bonding portion 442 of the base 4 are bonded by the bonding material 72, the cause is that the melt of the first bonding layer 443 and the second bonding layer 612 flows inward. Since there are no provisional fixing portions 443 and 612 provided in parallel and the first bonding layer 45 and the second bonding layer 64 are provided only in the bonding portions 442 and 611, compared with the crystal resonator shown in FIGS. Reduction of gas existing in the internal space 11 can be expected.

  Further, when the temporary fixing portions 442 and 611 are not provided, specifically, when the temporary bonding of the base 4 and the lid 6 by the FCB method is not performed before the heat treatment, the Au plating film 453 of the first bonding layer 45 and the second bonding The Au plating film 644 of the two bonding layer 64 may be omitted.

  1 and FIG. 5, the first bonding layer 45 is provided on the base 4 and the second bonding layer 64 is provided on the lid 6, but the second bonding layer 64 is provided on the base 4. And the first bonding layer 45 may be provided on the lid 6.

  In the crystal unit 1 shown in FIGS. 1 and 5, AuSn is used as the main material of the second bonding layer 64 that forms the bonding material 72, but the second bonding layer 64 has the base 4 and the lid. 6 is not particularly limited as long as it includes a brazing material capable of forming a bonding material for bonding to 6. For example, an Sn alloy brazing material such as CuSn may be used.

  Further, in the crystal resonator 1 shown in FIGS. 1 and 5, an AT cut crystal piece is used as the crystal vibrating piece 2, but a tuning fork type crystal piece may be used.

  As mentioned above, the embodiment in the case where the electronic component package according to the present invention is applied to the crystal resonator package has been described. However, this is a preferred embodiment, and the electronic component package according to the present invention is an electronic component element. Any electrode may be used as long as the electrode is sealed with the first and second sealing members. Therefore, in the electronic component package according to the present invention, the excitation electrode of the piezoelectric vibrating piece composed of a piezoelectric material other than quartz, for example, lithium tantalate or lithium niobate is sealed by the first and second sealing members. The piezoelectric vibration device package may be hermetically sealed.

  The present invention can be implemented in various other forms without departing from the spirit or main features thereof. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

1 Crystal resonator 11 Internal space 2 Crystal resonator element (electronic component element)
21 Substrate 22, 23 Main surface 24 Center part of short side 26 Vibrating part 27 Junction part 31, 32 Excitation electrode 33, 34 Terminal electrode 35, 36 Lead electrode 4 Base (first sealing member)
41 Bottom portion 411, 412 Pedestal portion 42, 43 Main surface 44 Wall portion 441 Wall top surface 442 Joint portion 443 Temporary fastening portion 45 First joining layer 451 Ti sputtered film 452 Au sputtered film 453 Au plated film 46 cavity 461 bottom face 47 , 48 Castration 49 Through-hole 491 Inner side surface 51, 52 Electrode pad 53, 54 External terminal electrode 56 Conductive metal 6 Lid (second sealing member)
61, 62 Main surface 611 Bonding portion 612 Temporary fixing portion 64 Second bonding layer 641 Ti sputtered film 642 Au sputtered film 643 An / Sn film 644 Au plated film 72 Bonding material 721 meniscus

Claims (5)

In an electronic component package that hermetically seals an electrode of an electronic component element,
Comprising first and second sealing members for hermetically sealing the electrodes of the electronic component element;
The outer peripheral edge of one main surface of each of the first and second sealing members is bonded with a bonding material including a brazing material,
The outer peripheral edge portion of at least one of the first and second sealing members is a tapered surface inclined from the one main surface to the other main surface of the sealing member. Electronic component package. The electronic component package according to claim 1,
A boundary line between the tapered surface and the other surface formed continuously with the tapered surface is formed in an arc shape at a corner of the one principal surface in which the outer peripheral edge portion is a tapered surface. Features electronic component package. The electronic component package according to claim 1 or 2,
Each of the first and second sealing members has a rectangular shape in plan view,
A bonding layer forming region in which a bonding layer forming a part of the bonding material is formed on each outer peripheral edge of each of the first and second sealing members,
The bonding layer forming region includes a short side region having a width in the long side direction of the one main surface, and a long side region having a width in the short side direction of the one main surface and having the same area as the short side region. An electronic component package characterized by comprising: An electronic component package manufacturing method for hermetically sealing an electrode of an electronic component element,
A molding step of molding the first and second sealing members;
A bonding layer forming step of forming a bonding layer in the bonding layer forming region provided in the outer peripheral edge of each of the first and second sealing members;
A mounting step of mounting the electronic component element on the first sealing member;
The bonding layer is heated and melted to form a bonding material containing a brazing material, and an outer peripheral edge portion of one main surface of each of the first and second sealing members is bonded, whereby the electrode of the electronic component element A hermetically sealing step,
In the molding step, the outer peripheral edge of at least one of the first and second sealing members is molded into a tapered surface that is inclined from the one main surface to the other main surface of the sealing member. An electronic component package manufacturing method characterized by the above. A method of manufacturing an electronic component package according to claim 4,
In the molding step, the first and second sealing members are each molded into a rectangular shape in plan view,
In the bonding layer forming step, a short side region having a width in the long side direction of the one main surface and a long side region having a width in the short side direction of the one main surface and the same area as the short side region The bonding layer is formed with a uniform thickness in the bonding layer forming region comprising: an electronic component package manufacturing method.

Images