JP2011221555A - Pattern inspection device and pattern drawing system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To detect a defect of a mask early and improve a throughput.SOLUTION: A pattern drawing system includes a pattern drawing device 100 and a pattern inspection device 200 connected with each other. The pattern drawing device 100 detects by an electron detector 120 secondary electrons emitted from a substrate upon drawing, generates defect prediction data in accordance with an obtained drawing result data, and sends the defect prediction data to the pattern inspection device 200 through a LAN 130. The pattern inspection device 200 receives the defect prediction data supplied from the pattern drawing device 100 and determines an order of priority of inspection in accordance with the defect prediction data.

Description

  The present invention relates to a pattern drawing apparatus that draws a pattern of a semiconductor element on a substrate such as a mask (reticle) or a wafer, and a pattern inspection apparatus that inspects for the presence or absence of a defect in a mask or wafer produced by the pattern drawing apparatus. Furthermore, it is related with the pattern drawing system comprised by connecting these organically.

  In recent years, circuit line widths required for semiconductor elements have become increasingly narrower as LSIs have higher precision and larger capacity. In manufacturing these semiconductor elements, a reduction projection exposure apparatus called a stepper is used, and a circuit pattern formed on a mask is transferred onto a wafer. As a drawing apparatus for producing a mask, an electron beam drawing apparatus, a laser beam drawing apparatus, and the like have been developed.

  On the other hand, it is known that various defects occur in a mask pattern manufactured by a pattern drawing apparatus during the manufacturing process. Such defects not only make the manufactured semiconductor device impossible to operate, but also greatly affect the manufacturing yield. Therefore, an effort to eliminate defects, that is, an inspection and correction process in which defects are detected and corrected or remanufactured is an important technology in semiconductor manufacturing. In this background, many optical pattern inspection apparatuses are currently used as apparatuses capable of detecting pattern defects (see, for example, Patent Document 1 and Non-Patent Document 1).

  Conventionally, a pattern drawing apparatus draws a pattern based on CAD data which is pattern design data. When drawing a pattern of a mask that is becoming increasingly finer, the drawing time is extended by the square of the pattern size reduction rate (for example, when the pattern size is halved, the inspection time is four times longer), and the throughput is further reduced. Will do. In fact, as the time required for pattern drawing, 4 to 5 hours per mask is excellent, and recently, the time required for 10 hours or more is increasing.

  On the other hand, the conventional pattern inspection apparatus scans a mask inherited through many manufacturing processes after the pattern drawing apparatus correctly from the end to the end, and searches for the presence or absence of defects. As a result, as in pattern drawing, when inspecting an increasingly finer mask, the inspection time is extended by the square of the reduction ratio of the pattern dimension (for example, when the pattern dimension is halved, the inspection time is four times longer). The throughput will decrease further. Actually, the time required for inspection is 4 to 5 hours per mask, and more than 10 hours have recently been used.

  Therefore, even if a fatal defect occurs during drawing in the pattern drawing apparatus, the pattern drawing time and the mask manufacturing process time (at least there are processing such as development and etching, etc. (It may be in units of days), and it will be discovered for the first time after the total inspection time has elapsed, and then remanufactured from there. In response to the recent demand for cost reduction of semiconductor devices, the dead time in the mask manufacturing time has become a very significant bottleneck from the viewpoint of overall semiconductor device manufacturing.

European Patent 0532927A2 Specification

“Mask defect inspection method by database comparison with 0.25-0.35um sensitivity”, Jpn.J.Appl.Phys., Vol.33 (1994)

  Thus, conventionally, in order to inspect a defect of a mask, it is necessary to compare measurement data and design data over the entire surface of the mask, which requires a lot of time, which causes a decrease in throughput. . For example, when a defect is not found for a long time from the start of inspection and a defect is found near the end of the inspection, the time until that time is wasted. If early defect detection is possible, the inspection can be terminated there and the dead time can be eliminated, but there was no method for early defect detection.

  The present invention has been made in consideration of the above circumstances, and the object of the present invention is to provide a pattern drawing system that enables early defect detection on a substrate on which a circuit pattern is drawn and contributes to an improvement in throughput. Is to provide.

  Another object of the present invention is to provide a pattern drawing apparatus and a pattern inspection apparatus that can be used in the above system.

  In order to solve the above problems, the present invention adopts the following configuration.

A pattern writing apparatus according to an aspect of the present invention compares pattern measurement data obtained by optically detecting a circuit pattern formed on a substrate with pattern design data corresponding to the circuit pattern, and means for checking the presence or absence of a defect of the circuit pattern, to the circuit pattern formed on the substrate, wherein on the basis of the drawing result data including the device information at the time of drawing obtained from the measurement gauge provided in the drawing device Means for fetching defect forecast data created by the drawing apparatus, and means for determining the priority of inspection by the inspection means so as to first inspect a place where a defect is predicted to occur based on the defect prediction data When the priority portion of the circuit pattern determined to first inspect the rank after examined by serial testing means, the circuit path that is further formed on the substrate And characterized by being provided with means for checking by said checking means the entire surface of over emissions, and.

Still another aspect of the present invention provides a pattern drawing apparatus for drawing a desired circuit pattern on a substrate by scanning a line bundle from a radiation source on the surface of the substrate based on pattern design data, and forming on the substrate. A pattern drawing system comprising: a pattern inspection system that compares a pattern measurement data obtained by optically detecting a circuit pattern formed and a pattern design data to inspect for the presence or absence of a defect; The drawing apparatus detects the electron, X-ray, or light emitted from the substrate by scanning the line bundle, and obtains drawing result data including apparatus information at the time of drawing obtained from a measuring meter provided in the apparatus. A result detection means; a means for creating defect prediction data indicating the possibility of drawing a defect pattern based on the drawing result data obtained by the drawing result detection means; and the defect prediction data. The pattern inspection apparatus includes a means for fetching defect prediction data output from the pattern drawing apparatus, and a location where a defect is predicted to occur based on the defect prediction data. Means for determining the priority of the inspection by the inspection means to be inspected, and after inspecting the location of the circuit pattern determined to be inspected by the priority by the inspection means, further formed on the substrate And means for reinspecting the entire surface of the circuit pattern by the inspection means .

1 is an overview configuration diagram showing a pattern drawing device and an inspection device according to an embodiment of the present invention. The flowchart for demonstrating operation | movement of the system of FIG.

  Before describing the embodiment, the basic principle of the present invention will be described.

  The throughput in the current mask manufacturing depends on the high speed of each apparatus in the manufacturing process. Even if the pattern drawing device and the pattern inspection device each reduce the throughput by 10%, it is obvious that only the first and last two steps of all the steps are shortened, so that it is difficult to obtain a significant effect. However, if it is found that there is a fatal defect immediately after the start of substrate inspection (several minutes to several tens of minutes), 90% or more can be reduced even if the inspection time is 5 hours (drawing time 5 hours, post-drawing process 10 hours, Even if the inspection time is 5 hours, if a fatal defect can be found in 30 minutes, it will lead to a 22.5% reduction in the whole process). If it can be detected that there is a fatal drawing error = fatal defect during drawing, the dead time can be greatly reduced in all processes (drawing time of 5 hours, post-drawing process of 10 hours, inspection). Even if 5 hours are used, the cost of 5 hours required for the worst drawing can be reduced, and the entire process can be reduced by 75%).

  For example, if there is a defect that is determined to be uncorrectable, wasteful time can be reduced if it can be detected immediately after the inspection. Therefore, if there is a forecast that the pattern drawing device may have drawn a large defect, the inspection will start preferentially from there, and if there is no problem, the entire inspection will be performed, and the defect will actually be detected. If there is, the inspection can be finished immediately and the dead time can be eliminated at once.

  Also, if the pattern drawing device forecast is correct as a result of the actual mask inspection, the pattern drawing device itself can accurately determine the occurrence of a defect rather than a forecast by reporting the result to the pattern drawing device. Thus, the current mask drawing process can be stopped at the moment when it is determined that a fatal defect has occurred (drawn). In addition, the correlation between the actual defect occurrence and the forecast of the lithography tool can be used to analyze whether the cause of the defect in mask manufacturing is caused by lithography or the process after the lithography tool, which is useful for yield analysis. It is.

  In the conventional method, the CAD data that is the design drawing and the mask that is the product are only taken over between the pattern drawing device and the pattern inspection device that are in the upstream / downstream relationship of the mask manufacturing process. There was no way to improve the yield. Therefore, in the present invention, defect detection forecast and hit accuracy data of the forecast are shared between the pattern drawing apparatus and the pattern inspection apparatus that are in the upstream / downstream relationship of the mask manufacturing process, thereby enabling early defect detection. It is possible to do it.

(Embodiment)
The details of the present invention will be described below with reference to the illustrated embodiments.

  FIG. 1 is a schematic configuration diagram showing a pattern drawing system according to an embodiment of the present invention. This system shows a configuration of a pattern drawing apparatus 100, a pattern inspection apparatus 200, and a LAN 300 for connecting these apparatuses 100 and 200.

  The pattern drawing apparatus 100 scans (θ) the electron beam 111 from the electron gun 110 (θ) (perpendicular to the paper surface) by the deflector 112 based on the pattern design data (command value) given from the CPU 160 and masks it by the stage 140. The circuit pattern is drawn on the mask 130 by scanning 130 (substrate before circuit pattern formation) (x, left and right on the paper surface). The electron gun 110 may be a line source, for example, a laser light source. In this case, the laser beam may be scanned by a mirror.

  The stage 140 can also be positioned in the direction (y) perpendicular to the paper surface. Then, the position of the electron beam 111 irradiated on the mask 130 becomes drawing coordinates (x, y + θ) instructed by the CPU 160 based on CAD data. Here, x and y are positioned using the stage 140, and θ is positioned using the deflector 112. For x and y positioning, coordinate information rx and ry obtained from the heterodyne interference stage position measuring device 150 using the laser beam 151 is used, and for θ positioning, coordinate information rθ obtained from the deflector 112 is used, respectively. Used to obtain feedback control amount.

  Note that the actual drawing coordinates (rx, ry + rθ), which are actually detected coordinate values, are connected so as to be output to the CPU 160. What is required here is to perform drawing on the mask 130 in accordance with the coordinate values of the CAD data. In addition, the result of where the actually drawn position is is used as a positioning error described later. Incidentally, although omitted in the present embodiment, providing an autofocus mechanism for positioning the drawing focus is nothing other than enhancing the effect of the present embodiment.

  The pattern drawing apparatus 100 of the present embodiment includes a regulator (not shown) that defines a current value for controlling the exposure amount of the electron beam 111 irradiated from the electron gun 110 to the mask 130 to draw a pattern. . What is obtained here is at least an exposure amount control command value, which is a command value of the CPU 160 based on CAD data. It is not necessary that the exposure amount is actually emitted.

In order to further improve the accuracy, it is beneficial to be able to measure the exposure amount actually emitted with respect to the CPU command value. If the radiation source 110 is an electron beam, the current density, the irradiation area, and the irradiation opening angle In the case where laser light is used, the light quantity (W), the light quantity density (W / cm ² ), etc. are also used from the command value of the exposure amount of the radiation source 110 or the actual measurement value. Will enhance the effect. That is, these measuring meters are connected to the CPU 160 so that the measurement result can be output, and the amount of information used to measure or estimate the exposure amount actually irradiated on the mask 130 with respect to the command value of the CPU 160 is made rich. become.

  The pattern drawing apparatus 100 according to this embodiment measures a non-contact thermometer 141 that can measure the surface temperature of the mask 130, a three-axis accelerometer 142 for measuring the vibration of the stage 140, and vibration disturbance to the pattern drawing apparatus 100 itself. A vibration meter 143, a displacement meter (not shown), and a barometer, a thermometer, and a hygrometer (not shown) for measuring the atmospheric pressure, temperature, and humidity of the outside air are provided. These measuring meters are connected to the CPU 160 so that the measurement results can be output.

  What is required here is that it is possible to measure disturbances or phenomena that the pattern drawing apparatus 100 cannot control and manage. That is, not only the measurement items and physical quantities in this embodiment, but also the measurement items and physical quantities that can monitor disturbances or phenomena that cannot be controlled and managed by the pattern drawing apparatus 100 can obtain or enhance the effects of this embodiment. Can do. Typical examples include vibration displacement amount and acceleration, temperature, linear expansion, positioning error, focus position, and mask 130 shape dimension error at the current drawing position (mask 130, stage 140, electron optical system, etc.). Items such as thickness and deflection are also included.

  The pattern drawing apparatus 100 of this embodiment includes a secondary electron measuring device 120. This is to obtain the drawing result data by measuring the secondary electrons 121 emitted from the drawing site on the mask 130 irradiated with the electron beam 111. For example, the measuring instrument has a combination of a scintillator and a photomultiplier tube. Yes. These measuring meters are connected to the CPU 160 so that the measurement results can be output.

  What is necessary here is that it is possible to measure or estimate the exposure amount actually irradiated on the mask 130 with respect to the command value of the CPU 160. This is not limited to the secondary electron measurement, and the use of an electron beam as in the present embodiment. In the case of a pattern drawing device, the effect of this embodiment can be obtained by providing a single detector or a plurality of detectors for measuring reflected electrons, Auger electrons, characteristic X-rays, phosphorescence, and the like. It is clear that the same effect can be obtained in a pattern writing apparatus using laser light or the like by providing a detector capable of measuring reflected light, diffracted light, scattered light, phosphorescence and the like.

  As described above, the pattern drawing apparatus 100 according to the present embodiment uses the “drawing coordinates (x, y + θ)” as the “command value” from the CPU 160 and the output to the CPU 160 obtained by the respective measuring meters, that is, the “actual values”. It can be acquired every time. In the present embodiment, the acquired “actual value” is compared with the “command value”, and when the difference exceeds a predetermined reference value (first reference value), the drawing coordinates and “ The “actual value” is paired and output as “defect forecast data”. In addition, when the “actual value” without the “command value”, that is, the measured value of the disturbance or phenomenon that the pattern drawing apparatus 100 cannot control and control exceeds a predetermined reference value, the drawing coordinates And “actual value” are paired and output as defect forecast data.

  What is necessary here is whether or not there is a difference between the "command value" that was planned to be drawn and the "actual value" actually exposed on the mask, and the degree of that difference, for each drawing coordinate. It can be done. And the degree of the difference is that it can be analogized that there is a possibility of actually producing a defect pattern. Therefore, not only the difference between the “command value” and the “actual value” is used, but also the index value is calculated based on the “correlation function” defined for each measuring instrument or for a plurality or all of the measuring instruments. Calculation and use are also consistent with the gist of the present invention. The reason for selecting the command value and the measuring instrument used in the present embodiment described above is based on a phenomenon that may actually cause a defect pattern and whether it is a disturbance or not. The use of the command value and the measuring meter selected in accordance with the present invention is consistent with the gist of the present invention.

  The pattern drawing apparatus 100 according to the present embodiment can output the collected “defect prediction data” as electronic data via the LAN 300, electronic media (mass storage medium), or the like. What is required here is that “defect forecast data” can be output to the pattern drawing apparatus external 100 so that it can be used, and means that meets this point can be interpreted as being based on the present invention.

  The pattern drawing apparatus 100 according to the present embodiment can correct the reference value when creating “defect forecast data” to be output to the pattern inspection apparatus 200 based on “predictive mid-rate data” from the pattern inspection apparatus 200 described later. That is, the reference value that suggests the possibility of the occurrence of a defect is corrected and updated for each amount based on the above “actual value” in the drawing coordinates where the defect is actually determined in the pattern inspection apparatus 200, and the subsequent pattern drawing Can be used as a new standard for "defect forecast data". As a result, parameters that contribute to the occurrence of defects in drawing and the extent of those parameters can be clarified by feedback across processes.

  In addition, the “defect forecast data” according to the present embodiment can change the type of the measurement value attached to the drawing coordinates as needed. That is, if it becomes clear that the influence of humidity in the surrounding environment of the pattern drawing apparatus 100 is hardly caused by repetition of the above feedback, human or automatic determination (in this case, a reference value must be provided. It is clear that the defect occurrence probability is 0% or the like as the gist of the invention), and it is possible not to attach this humidity measurement value to the subsequent “defect forecast data”. In this way, the data amount can be reduced. On the other hand, it is clear that a new evaluation standard can be easily added to the “defect forecast data”. As a result, performance analysis and progress diagnosis of the pattern drawing apparatus 100 can be performed.

  Next, the pattern inspection apparatus 200 according to this embodiment irradiates the mask 130 with the light beam 211 from the laser light source 210 via the microscope optical system 220 above the mask 130 (substrate on which the circuit pattern is formed), and the stage. The entire surface on the mask 130 is scanned using the scanning of the mask 130 by 240 (the horizontal direction and the direction perpendicular to the paper surface). Then, the light beam 211 obtained by scanning the mask 130 and acquiring the pattern information is imaged on the TDI sensor 222 via the microscope optical system 221 below the mask, and a pattern image can be captured. That is, measurement data of a circuit pattern formed on the mask 130, that is, pattern measurement data is obtained.

  In the present embodiment, a microscope optical system based on critical illumination is simply used. However, using a microscope optical system based on Koehler illumination is advantageous because it enables a more sensitive defect inspection. In addition, a laser scanning type optical system or a reflection optical system can be employed. In any case, it does not change along the gist of the present invention. Of course, the light source 210 is not limited to a laser light source, and the effects of the present embodiment can be obtained by using a CCD camera, a photodiode, an electron multiplier, or the like for imaging.

  The position of the light beam 211 irradiated on the mask 130 becomes the drawing coordinates (x, y) commanded by the CPU 260 based on the CAD data used in the pattern drawing apparatus 100. Here, the x and y are positioned using the stage 240. For x and y positioning, coordinate information kx and ky obtained from a heterodyne interference type stage position measuring device 250 using a laser beam 251 is used to obtain a position feedback control amount. Note that the actual drawing coordinates (kx, ky), which are actually detected coordinate values, are connected so that they can be output to the CPU 260. What is necessary here is to inspect the mask 130 in accordance with the coordinate values of the CAD data. Incidentally, although omitted in the present embodiment, providing an autofocus mechanism for positioning the optical focus is nothing other than enhancing the effect of the present embodiment.

  The pattern inspection apparatus 200 according to the present embodiment draws pattern data (reference image) based on CAD data and a captured pattern image (sensor image) with drawing coordinates (x, y) and actual drawing coordinates (kx, ky). Can be compared to match. The acquired reference image is compared with the sensor image, and a defect is determined based on a difference from a predetermined reference value using a significant comparison algorithm for determining the presence or absence of a defect such as a difference amount or a differential amount.

  The pattern inspection apparatus 200 of the present embodiment can input “defect prediction data” from the pattern drawing apparatus 100 via the LAN 300, electronic media (mass storage medium), or the like. Based on the “defect forecast data”, the coordinates to be subjected to defect inspection with the highest priority can be determined, and the trajectory of mask scanning can be determined and inspected based on the result. Further, it is possible to determine the possibility of occurrence of a defect in comparison with “predictive mid-rate data” described later. Further, based on the defect occurrence prediction information from the pattern drawing apparatus, the following defect inspection procedure can be performed by comparing with the actual defect detection result.

  FIG. 2 is a flowchart for explaining the operation of the system of FIG.

  First, the pattern inspection apparatus 200 acquires defect prediction data created by the pattern drawing apparatus 100 (step S1), and determines an inspection priority based on this data (step S2). That is, it is determined from the defect forecast data that a portion where a defect is likely to occur is inspected first. Then, defects are inspected according to this priority order (step S3), and the presence or absence of defects is determined (step S4).

  If it is determined in S4 that there is a defect, it is determined whether or not defect prediction data corresponding to the defect has been acquired (step S5). If defect prediction data has been acquired, it is determined that there is a defect (step S6). . Then, the prediction priority is improved by feeding back to the pattern drawing apparatus 100 (step S7). If defect prediction data has not been acquired, the number of inspections, inspection sensitivity, or the amount of shift of the scanning coordinates for inspection is determined based on predetermined requirements (step S8). Then, the coordinates are reinspected (step S9), and the presence / absence of a defect is reinspected (step S10). If a defect is rediscovered in S10 (more than a predetermined number of times), it is output as a true defect (step S11). If no defect is found in S10, it may be noise, so it is not output as a defect, it is determined as a pseudo defect (step S12), and the determination result is fed back to the drawing apparatus 100. Further, readjustment of the pattern inspection apparatus 200 is performed (step S13).

  On the other hand, if it is determined in S4 that there is no defect, it is determined whether or not defect prediction data corresponding to the defect has been acquired (step S14). If defect prediction data has not been acquired, it is determined that there is no defect ( Step S15). If the defect prediction data has been acquired, the number of inspections, inspection sensitivity, or the amount of shift of the scanning coordinates at the time of inspection is determined based on predetermined requirements (step S16). Then, the coordinates are reinspected (step S17), and the presence or absence of a defect is reinspected (step S18). If no defect is found in S18, the result is fed back to the drawing apparatus 100, and the forecast threshold value is changed (step S19). If a defect is rediscovered (at a predetermined number of times or more) in S18, it is determined as a true defect (step S20), and the result is fed back to the drawing apparatus 100. Further, readjustment of the pattern inspection apparatus 200 is performed (step S13).

  Characteristic operations in the present embodiment are two procedures of S8 to S13 and S16 to S21.

(Procedure 1)
If there is no defect forecast data (or the probability of defect occurrence is low) and a defect is detected,
1) Re-inspecting while determining the number of inspections based on predetermined requirements,
2) Re-inspecting while changing inspection sensitivity based on predetermined requirements,
3) Re-examination from the position where the scanning coordinates at the time of the previous inspection are slightly shifted,
This procedure can be performed selectively or in combination. As a result, if a defect is rediscovered (over a predetermined number of times), it may be output as a true defect, or if it is not found conversely, it may be noise, so it may not be output as a defect, and noise may have occurred You will be able to report or be there.

(Procedure 2)
If you have defect forecast data, but you cannot detect the defect,
1) Re-inspecting while determining the number of inspections based on predetermined requirements,
2) Re-inspecting while changing inspection sensitivity based on predetermined requirements,
3) Re-examination from the position where the scanning coordinates at the time of the previous inspection are slightly shifted,
This procedure can be performed selectively or in combination. As a result, if a defect is rediscovered (over a predetermined number of times), it is output as a true defect, or if it is not found conversely, there was a possibility that there was no real defect or it was a noise. It is possible to report that there is a possibility that noise has occurred without outputting.

  What is important here is that not only the inspection time can be shortened by predicting defects, but also the performance state (including the presence or absence of performance deterioration) of the pattern inspection apparatus 200 can be verified, and the credibility of the obtained inspection results is increased. Is to be able to. Furthermore, as described above, feedback to the pattern drawing apparatus 100 is also possible, and performance improvement and quality control of a plurality of apparatuses across processes can be performed. In addition, it is possible to analogically separate whether the generated defect is caused by the `` pattern drawing device '' or other processes, and it is possible to quickly narrow down the improvement points for improving the yield. Can help with yield analysis.

  The pattern inspection apparatus 200 according to the present embodiment outputs, as “predictive mid-rate data”, a pair of drawing coordinates where a defect actually occurs and “defect forecast data” there based on the result of the inspection. . This “predictive mid-rate data” can be held inside the pattern inspection apparatus 200 (when the storage capacity is limited, only “predictive mid-rate data” held inside the pattern inspection apparatus 200 excludes drawing coordinates. Can be output as electronic data via the LAN 300, electronic media (mass storage medium), or the like.

  What is required here is that “predictive mid-rate data” can be output to the outside of the pattern inspection apparatus 200 so that it can be output to the outside of the pattern inspection apparatus 200. In addition, it becomes possible to predict that a defect is clearly generated based on the drawing prediction information in the pattern drawing apparatus 100, and it is possible to interrupt the drawing process by determining whether or not the drawing process can be continued. Significant reduction is possible.

In addition, “predictive mid-rate data” can identify a defect type that is “bad” for the pattern inspection apparatus 200. That is, by identifying a defect type that is not good, it is possible to make improvements and adjustments specific to the defect type. Therefore, it can be said that these can be operated automatically and can lead to improvement in improvement efficiency.

  As described above, the pattern drawing apparatus 100 according to the present embodiment draws a pattern based on CAD data that is pattern design data. Since the drawing result may include a writing error, the drawing result data is sequentially stored for each drawing coordinate, and the design data, the mask, and the drawing result data are set as a set and transferred to the pattern inspection apparatus 200.

  The pattern inspection apparatus 200 according to the present embodiment performs an inspection while comparing the difference between the mask inherited from the pattern drawing apparatus 100 and the CAD data. It is possible to recognize the coordinate part affected by the disturbance and perform the inspection with the highest priority. If an uncorrectable defect is actually detected, the inspection is immediately completed and reported, and if it is a correctable defect, the entire inspection is continued and defect information is reported. . In addition, if a defect cannot be found despite the fact that a defect has been predicted from the drawing result data, the same location may be repeatedly inspected a predetermined number of times because it may be caused by fluctuations in the performance of the inspection device. Or by increasing the inspection sensitivity and performing the inspection again, it is possible to detect a very fine defect near the performance limit of the inspection apparatus or to confirm that it was a false detection.

  In addition, these inspection results can be fed back to the pattern drawing apparatus 100, and it can be determined that the pattern drawing apparatus itself has caused a fatal drawing mistake during drawing. In addition, the drawing apparatus It becomes possible to identify whether the defect is caused by a defect or a defect caused by another manufacturing process. As a result, the throughput can be greatly reduced by early detection of a fatal defect, and the performances of the pattern writing apparatus 100 and the inspection apparatus 200 can be compensated for each other, making it easy to manage the performance of each apparatus. , You will be able to demonstrate high performance stably. And it can contribute to the yield and reliability improvement of the whole mask manufacturing process.

  As described above, the pattern drawing system according to the present embodiment includes defect prediction data for predicting the occurrence of defects caused by drawing between the pattern drawing apparatus 100 and the pattern inspection apparatus 200, and actual predictive predictive data for the forecast. Can be generated and shared, so that the presence of fatal pattern defects can be detected at the beginning of substrate inspection, and the occurrence of defects can be detected during pattern drawing. It is possible to shorten the time until the start.

(Modification)
In addition, this invention is not limited to embodiment mentioned above. The configurations of the pattern drawing apparatus and the pattern inspection apparatus are not limited to those shown in FIG. 1 and can be appropriately changed according to the specifications. As a pattern drawing device, simultaneously with normal drawing, electrons, X-rays or light emitted from the substrate are detected by scanning a bundle of rays, drawing result data is obtained, and defect prediction data is created based on this drawing result data. Any defect prediction data can be output. Any pattern inspection apparatus may be used as long as it has a function capable of changing inspection priority, detection sensitivity, number of repetitions, and the like based on defect prediction data in addition to a normal defect inspection function.

  Any of an electron beam, lamp light, laser light, and X-ray can be used as the radiation source. The drawing result detector may be any detector that can measure reflected electrons, secondary electrons, Auger electrons, characteristic X-rays, phosphorescence, reflected light, diffracted light, scattered light, and the like.

  In the embodiment, the difference amount between the drawing command data and the drawing result data is used as the defect prediction data. However, the drawing result data itself may be used. Furthermore, when the drawing result data exceeds a predetermined reference value (second reference value), the drawing coordinates and the “actual value” are paired and output as “defect forecast data”. May be.

  In the embodiment, the defect prediction data is output alone, but it may be added to or attached to the pattern design data. Here, adding means adding defect prediction data to the pattern design data itself, and attaching means adding it to the pattern design data as an attached file associated with the data.

  In addition, various modifications can be made without departing from the scope of the present invention.

DESCRIPTION OF SYMBOLS 100 ... Pattern drawing apparatus 110 ... Electron gun (radiation source)
111 ... electron beam (wire bundle)
112 ... Deflector 130 ... Mask (substrate)
DESCRIPTION OF SYMBOLS 140 ... Stage 141 ... Thermometer 142 ... Accelerometer 143 ... Vibrometer 150 ... Stage position measuring device 151 ... Laser beam 200 ... Pattern inspection apparatus 210 ... Laser light source 211 ... Light beam 220 ... Microscope optical system 221 ... Microscope optical system 222 ... TDI Sensor 240 ... Stage 251 ... Laser light 250 ... Stage position measuring device 300 ... LAN

Claims (5)

Means for comparing the pattern measurement data obtained by optically detecting the circuit pattern formed on the substrate and the pattern design data corresponding to the circuit pattern, and inspecting for the presence or absence of a defect in the circuit pattern on the substrate; ,
Means for fetching defect prediction data created by the drawing device based on drawing result data including drawing device information obtained from a measuring meter provided in the drawing device for a circuit pattern formed on the substrate; ,
Means for determining a priority of inspection by the inspection means so as to first inspect a place where a defect is predicted to occur based on the defect prediction data;
Means for inspecting the entire surface of the circuit pattern formed on the substrate by the inspection means after inspecting the location of the circuit pattern determined to be inspected first by the priority order by the inspection means;
A pattern inspection apparatus comprising: Means for comparing the pattern measurement data obtained by optically detecting the circuit pattern formed on the substrate and the pattern design data corresponding to the circuit pattern, and inspecting for the presence or absence of a defect in the circuit pattern on the substrate; ,
Means for fetching defect prediction data created by the drawing device based on drawing result data including drawing device information obtained from a measuring meter provided in the drawing device for a circuit pattern formed on the substrate; ,
Means for determining priority of inspection by the inspection means, detection sensitivity, or number of repetitions based on the defect forecast data;
After inspecting the location of the circuit pattern determined to perform the inspection first by the priority order by the inspection means, if it is determined that there is a defect in the circuit pattern and the defect prediction data is not captured, Or, when it is determined that there is no defect in the circuit pattern and the defect prediction data is taken in, the circuit pattern portion determined to be inspected first according to the priority order is inspected again by the detection sensitivity. Or repeatedly performing the inspection at the number of repetitions, and further inspecting the entire surface of the circuit pattern formed on the substrate by the inspection means,
Creating predictive predictive data based on whether or not the location corresponding to the defect predictive data was actually determined as a defect, and holding or outputting the predictive predictive data;
A pattern inspection apparatus comprising:   3. The pattern according to claim 1, wherein the defect prediction data is created based on a difference between a command value given to the drawing device and an actual value measured at the time of actual drawing. Inspection device. A pattern drawing device that scans a line bundle from a radiation source on the substrate surface based on the pattern design data and draws a desired circuit pattern on the substrate, and optically detects the circuit pattern formed on the substrate. A pattern drawing system formed by connecting a pattern inspection device that compares the obtained pattern measurement data and pattern design data to inspect for the presence or absence of defects,
The pattern drawing apparatus detects drawing electrons, X-rays, or light emitted from the substrate by scanning the line bundle and obtains drawing result data including apparatus information at the time of drawing obtained from a measuring meter provided in the apparatus. A drawing result detecting means, a means for creating defect forecast data indicating the possibility of drawing a defect pattern based on the drawing result data obtained by the drawing result detecting means, and a means for outputting the defect forecast data. Have
The pattern inspection apparatus includes means for capturing defect prediction data output from the pattern drawing apparatus, and the inspection means so as to first inspect a place where a defect is predicted to occur based on the defect prediction data. Means for determining the priority of the inspection;
And means for inspecting the entire surface of the circuit pattern formed on the substrate by the inspection means after inspecting the circuit pattern portion determined to be inspected first by the priority order by the inspection means. A pattern drawing system characterized by that.   The means for creating the defect forecast data creates defect forecast data based on a difference between a command value given to the drawing device and an actual value measured at the time of actual drawing. 5. The pattern drawing system according to 4.

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