JP2011211009A - Semiconductor optical integrated element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor optical integrated element such as a laser array element with modulators integrated therein, having configuration in which high-frequency signals to respective integrated modulating elements are kept uniform by enabling intervals and lengths of input interconnects to high-frequency electrodes on a chip (semiconductor optical integrated element) to be uniform while preventing reflection on a light emission end face of the semiconductor optical integrated element.SOLUTION: The semiconductor optical integrated element 11 includes a plurality of electrode pads 17A to 17D formed on the same substrate 11a so as to input high-frequency signals, and also has an optical output waveguide 16 for emitting light formed obliquely relative to the light emission end face 11b, and configured to emit the light obliquely relative to the optical emission end face 11b, wherein the plurality of electrode pads 17A to 17D are arranged side by side in a direction orthogonal to the emission direction C of the light from the semiconductor optical integrated element 11.

Description

  The present invention relates to a semiconductor optical integrated device such as an array device of a semiconductor laser in which a modulator used as a light source for optical fiber communication is integrated.

  In the wavelength multiplexing communication system in optical fiber communication, a plurality of optical signals having different wavelengths are transmitted through a single optical fiber. Generally, a semiconductor distributed feedback (DFB) laser operating in a single mode is used as a light source for optical fiber communication. Therefore, for wavelength multiplexing communication, a plurality of DFB lasers operating at different wavelengths are used, each of which is directly modulated or externally modulated, and their optical outputs are multiplexed and transmitted using an optical coupler.

In addition, integrated devices are being developed to reduce the size and power consumption of the system. FIG. 4 shows a conventional semiconductor optical integrated device. A semiconductor optical integrated device (hereinafter also referred to as a chip) 1 shown in FIG. 4 inputs (applies to) optical outputs of four DFB lasers 2A, 2B, 2C, and 2D formed on the same substrate 1a and high-frequency signals. ) Are modulated by four electroabsorption (EA) external modulators 4A, 4B, 4C, and 4D each having electrode pads 3A, 3B, 3C, and 3D, and one optical output is provided by the optical coupler 5. This is an array element of EA-DFB lasers 7A, 7B, 7C, and 7D having a function of combining with the waveguide 6. Thereby, since the package 5 can be made into one, it is possible to aim at a low power consumption and cost reduction compared with the case where a temperature control mechanism, a lens, etc. are provided individually.
In FIG. 4, 9 is a non-reflective coating coated on the light emitting end face (semiconductor end face: cleaved face) 1b of the chip 1, and arrow A is from the chip 1 (light output end 6a of the light output waveguide 6). The light emitting direction 10 is an optical component such as a lens.

  It is known that single mode lasers such as DFB lasers operating in a single mode are generally vulnerable to reflected light. That is, once the light emitted to the outside of the laser resonator is reflected and reenters the inside of the resonator, the line width increases according to the intensity and phase of the reflected wave, and the communication quality deteriorates. The influence of this reflected wave is more problematic in the far reflection than in the vicinity of the laser emission end face. Therefore, in the case of an element in which the optical waveguide continues for a long time before the laser beam is emitted from the semiconductor into the air, as in the laser array of Non-Patent Document 1, a non-reflective coating is applied to the semiconductor open surface (light emitting end surface). In addition, the optical output waveguide is disposed obliquely with respect to the cleaved surface, and even a slight amount of reflected light on the cleaved surface with a non-reflective coating is returned to the optical output waveguide. There is no structure.

  FIG. 5 shows a structure when the light output waveguide 6 is formed obliquely with respect to the light emitting end face 1 b of the chip 1. 5 is the same as that of the chip 1 in FIG.

Hiroyuki Ishii et. Al., "Widely Wavelength-Tunable DFB Laser Array Integrated With Funnel Combiner," IEEE Journal of Selected Topics in Quantum Electronics, vol. 13, no. 5, pp. 1089-1094, September / October 2007.

  As shown in FIG. 5, when the light output waveguide 6 is disposed obliquely with respect to the light emitting end face 1b, the light emitting direction (arrow B direction) is also inclined with respect to the light emitting end face 1b. Therefore, in order to simplify the arrangement of the optical component 10 in the package 8, the chip 1 is arranged obliquely in the package 8, and the horizontal direction (horizontal direction: x-axis direction) of the rectangular package 1 is determined. It is necessary to output light in parallel.

Considering the angle by Snell's law as a plane wave for simplification, the optical output waveguide 6 is orthogonal to the angle θ ₁ (that is, the optical output waveguide 6 and the light output end face 1b by the refractive index of the semiconductor portion and air. In the case of being inclined by an angle θ ₁ formed with the direction, the light emitting direction B becomes an angle θ ₂ (that is, the angle θ ₂ formed between the light emitting direction B and the direction perpendicular to the light emitting end face 1b), and the chip 1 also needs to be tilted accordingly. If the chip 1 is not tilted, it is necessary to bend light along a path for guiding light from the chip 1 to the package 8 in the package 8, which increases the number of components and requires time and effort for adjusting the optical axis. This causes problems such as an increase in Here, even if a non-reflective coating or the like is applied and there is another layer between the semiconductor and air, the relationship between the final angle of the output waveguide 6 and the light output direction is clear from the equation of FIG. Are the same.

FIG. 7 shows the calculation result of the relationship between the refractive index n ₁ of the semiconductor (optical output waveguide 6) and the output angle θ ₂ by changing the input angle, that is, the angle θ ₁ of the optical output waveguide 6.
When the chip 1 is tilted, the line L1 connecting the electrode pads 3A to 3D of the EA modulators 4A to 4D for inputting high-frequency signals to the EA-DFBs 7A to 7D is inclined with respect to the package 8. End up. The high-frequency signal is introduced from outside the package 8, but the frame from the package 8 to the chip 1 is connected by a gold wire or the like. The shorter the gold wire, the less likely it is to be affected by other wiring. Therefore, after a flexible wiring board or the like is arranged above the chip 1 and wired from the frame of the package 8 to the chip 1, a wire is used only for a portion connected to the chip 1. However, if the positions of the electrode pads 3A to 3D of the chip 1 are different, the distances from the flexible wiring board to the electrode pads 3A to 3D will be different, and the flexible wiring board and the chip 1 (each electrode pad 3A to 3D). ) The lengths of the connecting wires will be different, and the quality of the high frequency signal will be different.

  In the case of the arrangement as shown in FIG. 5, since the line L1 of the electrode pads 3A to 3D is slanted, when trying to make the wire length (distance from the flexible wiring board to each electrode pad 3A to 3D) the same, Although it is necessary to devise an arrangement such as arranging the flexible wiring board diagonally, it is difficult to make the distance uniform as well as the time and effort required for production increase. Further, when the flexible wiring board is disposed obliquely, there is a problem that the flexible wiring board interferes with other components in the package 8 unless the flexible wiring board is also devised. In addition, if the shape of the flexible wiring board is complicated, the tolerance of tolerance when installing the flexible wiring board is reduced, so that mounting becomes difficult. Therefore, after all, the flexible wiring board needs to have a simple shape.

Further, when the chip 1 is disposed obliquely as shown in FIG. 5, if the width W of the chip 1 is wide, the corners of the chip 1 and the optical component 10 such as a lens interfere with each other. In order to prevent this interference, the lens or the like has an optimum position that is determined by the focal length, but the margin for installation at the optimum position is reduced. In the worst case, in order to prevent interference between the chip 1 and the optical component 10, the distance d between the chip 1 (the light output end 6a of the light output waveguide 6) and the optical component 10 is too far away, and the optical component 10 is optimal. The problem that it cannot be installed in a position arises. For example, in the configuration of FIG. 4, the distance d between the chip 1 and the optical component 10 is not limited, and the optical component 10 can be brought close to the chip 1. However, when the light output waveguide 6 is inclined by the angle θ ₁ as shown in FIG. 5, the light emission direction B is the angle θ ₂ with respect to the chip 1, so that it is necessary to dispose the chip 1 by that amount. There is. Therefore, the minimum value of the distance d between the optical output end 6a of the optical output waveguide 6 and the optical component 10 is approximately
d = W / 2 × sinθ ₂ (1)
Thus, the optical component 10 cannot be brought closer to the chip 1 any more.

The chip width W is determined by the distance D _MOD and the number (4 in the example of FIG. 5) of the EA-DFBs 7A to 7D arranged in parallel. In order to suppress the mutual interference between the elements (EA-DFBs 7A to 7D) of the modulation signal (high frequency signal), it is required to increase the element spacing D _MOD . In the future, the number of elements arranged in parallel will increase as the number of channels increases. Therefore, since the chip width W tends to be increased, the influence when the chips are arranged obliquely becomes larger.

  Accordingly, the present invention has been made in view of the above-described problems. While preventing reflection on the light emitting end face of a semiconductor optical integrated device such as a laser array device integrated with a modulator, a chip (semiconductor optical Provided is a semiconductor optical integrated device having a configuration in which the interval and length of input wirings to high frequency electrodes on an integrated device) can be made uniform, and high frequency signals to each integrated modulation device can be kept uniform. It is an issue.

A semiconductor optical integrated device according to a first aspect of the present invention for solving the above-described problems has a plurality of electrodes for inputting a high frequency signal to a plurality of optical semiconductor devices on the same substrate, and light for emitting light. An output waveguide is formed obliquely with respect to the light emitting end face of the semiconductor optical integrated element, and is a semiconductor optical integrated element configured to emit light obliquely with respect to the light emitting end face,
The plurality of electrodes for inputting the high-frequency signal are arranged in one or a plurality of rows in a direction orthogonal to the light emission direction from the semiconductor optical integrated device.

The semiconductor optical integrated device of the second invention is the semiconductor optical integrated device of the first invention.
The angle of the light output waveguide is inclined by 3 degrees or more with respect to the light emitting end face.

The semiconductor optical integrated device of the third invention is the semiconductor optical integrated device of the first or second invention, wherein the number of the electrodes arranged in the same column is N and the electrode interval is D _MOD (μm). If the angle of the light emission direction from the optical integrated device is θ ₂ (deg),
D _MOD × (N−1) × sin (θ ₂ )> 100 μm
It is characterized by being.

  A semiconductor optical integrated device according to a fourth aspect of the invention is a semiconductor laser array device in which any one of the optical semiconductor devices according to the first to third inventions is integrated with a modulator, or an array device of a semiconductor laser capable of direct modulation. Or an array element of a modulator.

  According to the semiconductor optical integrated device of the present invention, the reflection to the light emitting end face of the semiconductor optical integrated device such as the laser array device integrated with the modulator is prevented, and the high frequency electrode on the chip (semiconductor optical integrated device) is applied. The intervals and lengths of the input wirings can be made uniform, and high frequency signals to the integrated modulation elements can be kept uniform.

It is a figure explaining the structure of the semiconductor optical integrated device based on the 1st Example of this invention. It is a figure explaining the structure of the semiconductor optical integrated element which concerns on the 1st Example of this invention, Comprising: It is a figure which shows the state which has arrange | positioned the flexible wiring board. It is a figure explaining the structure of the semiconductor optical integrated element which concerns on the 2nd Example of this invention, Comprising: It is a figure which shows the state which has arrange | positioned the flexible wiring board. It is a figure explaining the structure of the conventional semiconductor optical integrated element. It is a figure explaining the structure of the conventional semiconductor optical integrated element. It is a figure explaining refraction of light. It is a figure explaining the relationship between a light output waveguide and a light emission angle.

  Embodiments of the present invention will be described below in detail with reference to the drawings.

<First Embodiment>
As shown in FIG. 1, a semiconductor optical integrated device (hereinafter also referred to as a chip) 11 according to the first embodiment of the present invention has a gain in the vicinity of a wavelength of 1.3 μm on the same InP substrate 11a. Semiconductor distributed feedback (DFB) lasers 12A, 12B, 12C, and 12D that have a GaInAsP multiple quantum well structure in the active layer and can operate in a single mode by forming a diffraction grating, and shorter than 1.3 μm in wavelength. Four EA-DFB lasers 14A, 14B, 14C, and 14D in which electroabsorption (EA) modulators 13A, 13B, 13C, and 13D each having an absorption peak of an AlGaInAs multiple quantum well structure having an absorption peak are respectively integrated in series. , An optical coupler (multiplexer) 15 having a GaInAsP having a band gap of 1.1 μm as a core for integrating and arranging their optical outputs in a single optical waveguide, arranged in parallel at equal intervals D _MOD And optical output waveguide 1 It is those that integrate.
Each of the EA modulators 13A to 13D includes electrode pads 17A, 17B, 17C, and 17D for inputting (applying) a high-frequency signal.
The light output waveguide 16 is formed and formed obliquely with respect to the light emitting end face (semiconductor end face: cleaved face) 11 b of the chip 11.
In FIG. 1, 22 is a non-reflective coating coated on the light emitting end face 11b of the chip 11, arrow C is the light emitting direction from the chip 11 (light output end 16a of the light output waveguide 16), and 21 is a lens. An optical component such as 17 is a package.

  In the first embodiment, even when the chip 11 is obliquely arranged in the package 17, the electrode pads 17A to 17D for inputting the modulation signal (high frequency signal) connect the electrode pads 3A to 3D. The lines L2 are arranged so as to be perpendicular to the lateral direction (horizontal direction: x-axis direction) of the rectangular package 18. Here, the horizontal direction (horizontal direction: x-axis direction) of the package 18 is the same as the light emission direction C of the chip 11, and the vertical direction (vertical direction: y-axis direction) of the package 18 is the light emission direction C. It is assumed that the direction is perpendicular to the direction. Therefore, the electrode pads 17 </ b> A to 17 </ b> D are arranged in a row in a direction orthogonal to the light emission direction C. The light emission direction C is inclined with respect to the light emission end face 11b.

The interval D _MOD between the EA-DFB lasers 14A to 14D (DFB lasers 12A to 12D and EA modulators 13A to 13D) is set to 500 μm with a margin in order to avoid mutual interference of high frequency signals. The width W of the chip 11 is 2 mm. The inclination angle θ _{1 of the} light output waveguide 16 (that is, the angle θ ₁ formed between the light output waveguide 16 and the direction perpendicular to the light emitting end face 11b) was set to 7 degrees. The inclination angle of the light emission direction C (that is, the angle formed between the light emission direction C and the direction perpendicular to the light emission end face 11b) is θ ₂ . Therefore, the tip 11 is also tilted accordingly.

From FIG. 7, if the refractive index n ₁ of the optical output waveguide (semiconductor waveguide) 16 is 3.29, the output angle is 23.6 degrees, so the chip 11 is also placed 23.6 degrees inclined with respect to the package 18. Yes.

  When the EA modulators 4A to 4D are arranged at the same position on the X axis (lateral direction) of the chip 1 as in the conventional semiconductor optical integrated device 1 of FIG. 5, the line L1 of the electrode pads 3A to 3D is also 23.6 degrees. It will be tilted. Therefore, in the case of the semiconductor optical integrated device 1 of FIG. 5, the position of the electrode pad 3A of the EA modulator 4A of the top EA-DFB 7A and the electrode pad 3D of the EA modulator 4D of the bottom EA-DFB 7D is When viewed in the lateral direction (x-axis direction) of the package 8, it is displaced by 600 μm or more.

On the other hand, in the semiconductor optical integrated device 11 of the present invention shown in FIG. 1, the line L2 of the electrode pads 17A to 17D of the EA modulators 13A to 13D is maintained while the interval D _MOD of the EA modulators 13A to 13D is maintained at 500 μm. Is kept perpendicular to the lateral direction (x-axis direction) of the package 18 (that is, because the vertical line L2 is perpendicular to the light emitting direction C), the EA-DFB lasers 14A to 14D on the chip 11 are used. Was slid (shifted) by ΔX in the X-axis direction (lateral direction) of the chip 11. ΔX can be calculated by the following formula.
ΔX = D _MOD × sin (θ ₂ ) = D _MOD × n ₁ × sin θ ₁ (2)
That is, the slide amount (deviation amount) ΔX of the element (EA-DFB lasers 14A to 14D) is determined according to the refractive index n _{1 of} the semiconductor (light output waveguide 16) and the angle θ ₁ of the light output waveguide 16. That's fine.

  Thus, if the respective wirings are made equivalent on the flexible wiring board 19 of FIG. 2, the wiring terminals 19A, 19B, 19C, and 19D of the flexible wiring board 19 are changed to the chip 11 as shown in FIG. The distances to the upper electrode pads 17A, 17B, 17C, and 17D can be made the same, and the wires 20A, 20B, 20C, and 20D that connect the wiring terminals 19A to 19D and the electrode pads 17A to 17D, respectively, can be used. Since the lengths can be made the same, all the elements (EA-DFB lasers 14A to 14D) can be driven in the same way. For this purpose, the flexible wiring board 19 may also have a simple shape and can be installed perpendicular to the lateral direction (x-axis direction) of the package 18, so that the flexible wiring board 19 can be easily mounted. In addition, interference between the optical component 21 such as a lens installed in front of the chip 11 and the flexible wiring board 19 can be easily avoided.

Since the size of a normal electrode pad is at least several tens of μm square, if the positional deviation is about 100 μm, it can be dealt with by adjusting the position where the wire is connected. However, if the position of the electrode pad is shifted more than that, it is necessary to greatly change the length of the wire or to incline the flexible wiring board. Therefore, when the chip is tilted and installed in the package, in the case of an element in which the deviation of the electrode pad position from the vertical line is 100 μm or more, the pad position may be slid so as to be aligned with the vertical line.
That is, if the number of modulators arranged in parallel is N, and the minimum electrode pad misalignment that produces the effect of the present invention is ΔD,
D _MOD × (N−1) × sin (θ ₂ )> ΔD (3)
It becomes.

As described above, when the electrode pad size is considered, the effect of the present invention can be obtained when ΔD = 100 μm. For example, as in the first embodiment, when the four EA modulators 13A to 13D are arranged in parallel and the light emission angle θ ₂ to the outside is 23.6 degrees, the distance D between the EA modulators 13A to 13D _When a design is required such that the _MOD is 83.3 μm or more, the above-described effects can be obtained by applying the present invention. Further, the accuracy of mounting each component in the package is several tens of μm. Even when this is taken into consideration, it is considered that the effect can be obtained when ΔD = 100 μm to 200 μm. As a result of actual mounting, the repeated mounting position system was 10 μm.

On the other hand, assuming that the modulator spacing is 200 μm, when N is 4, θ ₂ is about 9.6 degrees or more, and the above equation (3) is satisfied. When the spacing between the modulators is 100 μm, θ ₂ is about 19.5 degrees or more. Accordingly, since the refractive index n ₁ of the semiconductor (optical output waveguide) is approximately within the range of the horizontal axis in FIG. 7, when the modulator interval is 200 μm, as shown in FIG. 7, the angle of the optical output waveguide When θ ₁ is 3 degrees or more, the effect can be obtained by applying the present invention when the angle θ ₁ of the optical output waveguide is 6 degrees or more even if the modulator interval is 100 μm. If the modulator spacing is wider or the number of N increases, it is clear that the effect can be obtained by applying the present invention even when the angle θ ₁ of the optical output waveguide is shallower.

  As described above, by using the chip 11 of the first embodiment, it is possible to dispose the chip 11 obliquely in the package 18, while preventing reflection on the light emitting end surface 11 b of the chip 11. The electric wiring to the electrode pads 17A to 17D of the high-frequency input unit can be made simple and equivalent.

  The arrangement of each element in the semiconductor optical integrated element can be easily determined by, for example, a projection exposure method generally used for pattern formation. In other words, it is designed to have the arrangement described above, a mask used in the projection exposure method is created, and transferred to a resist that becomes a mask for processing a semiconductor using this, etching, metal deposition, lift-off, etc. Just do it.

  The material for forming the semiconductor optical integrated device of the present invention is not limited to GaInAsP or AlGaAsP on the InP substrate, and other optical semiconductor devices such as a GaAs substrate, GaInAs, AlGaAs, and GaInNAs are prepared. The material which can be used can be used. Further, since the feature of the present invention is the arrangement of the individual elements of the integrated device, the production method is not limited to a specific method. In addition to the exposure method using a mask, EB exposure using an electron beam, etc. May be used.

  In addition, the present invention is not limited to an array element of a semiconductor laser integrated with an EA modulator, but also an array element of a semiconductor laser integrated with another type of modulator, an array element of a semiconductor laser capable of direct modulation, a modulation The present invention can also be applied to a semiconductor optical integrated device such as an array device having only a container. That is, a plurality of electrodes for inputting a high-speed modulation signal are arranged vertically with respect to the lateral direction of the package (arranged in a direction perpendicular to the light emitting direction from the semiconductor optical integrated device). Therefore, the optical semiconductor element to which a modulation signal (high-frequency signal) is applied by an electrode (an optical semiconductor element integrated in a semiconductor optical integrated element) can be anything such as a modulator or a semiconductor laser. Good.

<Second Embodiment>
As shown in FIG. 3, the semiconductor optical integrated device 31 according to the second embodiment of the present invention further includes an input electrode pad for high-frequency signals compared to the semiconductor optical integrated device 11 of the first embodiment. Many semiconductor optical integrated devices.

A semiconductor optical integrated device (hereinafter also referred to as a chip) 31 according to the second embodiment is provided with electrode pads 33A, 33B, 33C, and 33D on the same substrate 31a, respectively, and modulators arranged at equal intervals. 32A, 32B, 32C, and 32D and electrode pads 35A, 35B, 35C, and 35D, respectively, and modulators 34A, 34B, 34C, and 34D arranged at equal intervals, and one light output of the modulators 32A to 32D. The optical coupler 36 and the optical output waveguide 37 for integrating the optical waveguides are integrated.
The light output waveguide 37 is formed and formed obliquely with respect to the light emitting end face (semiconductor end face: cleaved face) 31 b of the chip 31. The inclination angle of the light output waveguide 37 (that is, the angle formed between the light output waveguide 37 and the direction perpendicular to the light emitting end face 31b) is θ ₁ . The light emission direction (arrow D direction) from the chip 31 (light output end 37a of the light output waveguide 37) is inclined with respect to the light output end face 31b, and the inclination angle (that is, the light output direction D and the light output end 37a). The angle formed by the direction perpendicular to the light emitting end face 31b) is θ ₂ . Therefore, the tip 31 is also tilted accordingly.
In FIG. 3, 38 is a non-reflective coating coated on the light emitting end face 31b of the chip 31, 39 is an optical component such as a lens, 40 is a package, and 41 is a flexible wiring board.

  In the second embodiment, the electrode pads 33A to 33D and 35A to 35D are divided into two lines, a line L3 connecting the electrode pads 33A to 33D and a line L4 connecting the electrode pads 35A to 35D. The lines L3 and L4 are arranged so as to be perpendicular to the lateral direction (horizontal direction: x-axis direction) of the rectangular package 40. Here, the lateral direction (horizontal direction: x-axis direction) of the package 40 is the same as the light emission direction D of the chip 31, and the vertical direction (vertical direction: y-axis direction) of the package 40 is the light emission direction D. It is assumed that the direction is perpendicular to the direction. Accordingly, the electrode pads 33 </ b> A to 33 </ b> D and the electrode pads 35 </ b> A to 35 </ b> D are arranged in two rows in a direction orthogonal to the light emission direction D.

  Thus, if the respective wirings are made equivalent on the flexible wiring board 41, each wiring terminal 41A, 41B, 41C, 41D of the flexible wiring board 41 is connected to each of the chips 31 on the chip 31 as shown in FIG. The distances to the electrode pads 33A, 33B, 33C, and 33D are the same, and the distances from the wiring terminals 41E, 41F, 41G, and 41H of the flexible wiring board 41 to the electrode pads 35A, 35B, 35C, and 35D on the chip 31 are also the same. The lengths of the wires 42A, 42B, 42C, and 42D that connect the wiring terminals 41A to 41D and the electrode pads 33A to 33D, respectively, are the same, and the wiring terminals 41E to 41H and the electrode pads 35A to 35A are connected to each other. The lengths of the wires 43A, 43B, 43C, and 43D that connect the 35D to each other should be the same. Since it is, it becomes possible to drive all the elements (modulators 32A through 32D, 34A to 34D) in the same way. For this purpose, the flexible wiring board 41 may also have a simple shape, and can be installed perpendicular to the lateral direction (x-axis direction) of the package 40, so that the flexible wiring board 40 can be easily mounted. In addition, interference between the optical component 39 such as a lens installed in front of the chip 31 and the flexible wiring board 41 can be easily avoided.

  As described above, by using the chip 31 of the second embodiment, it is possible to dispose the chip 31 obliquely in the package 40, while preventing reflection on the light emitting end face 31b of the chip 31. The electric wiring to the electrode pads 33A to 33D and 35A to 35D of the high frequency input section can be made simple and equivalent.

  In the second embodiment, the flexible wiring board 41 is installed between the lines L3 and L4 of the electrode pads 33A to 33D and 35A to 35D, and the flexible wiring board 41 is shared. Another flexible wiring board may be prepared for each of the lines L3 and L4. Further, the number of electrode pad lines is not limited to two, and may be three or more as long as the flexible wiring board can be easily installed.

  The present invention relates to a semiconductor optical integrated device such as an array device of a semiconductor laser integrated with a modulator used as a light source for optical fiber communication, and more particularly, a high frequency signal formed on the same substrate (on one chip). Are input to (applied to) a plurality of optical semiconductor elements, and a light output waveguide for emitting light is provided on a light emitting end face (cleavage surface) of the semiconductor optical integrated element. In contrast, the present invention is useful when applied to a semiconductor optical integrated device that is formed obliquely and emits light obliquely with respect to the light emitting end face.

11 Semiconductor optical integrated device (chip)
11a InP substrate 11b Light exit end face 12A to 12D DFB laser 13A to 13D EA modulator 14A to 14D EA-DFB laser 15 Optical coupler 16 Optical output waveguide 16a Optical output end 17A to 17D Electrode pad 18 Package 19 Flexible wiring substrate 19A -19D Wiring terminal 20A-20D Wire 21 Optical component 22 Non-reflective coating 31 Semiconductor optical integrated device (chip)
31a Substrate 31b Light exit end face 32A to 32D Modulator 33A to 33D Electrode pad 34A to 34D Modulator 35A to 35D Electrode pad 36 Optical coupler 37 Optical output waveguide 37a Optical output end 38 Non-reflective coating 39 Optical component 40 Package 41 Flexible Wiring board 41A-41H Wiring terminal 42A-42D, 43A-43D Wire

Claims (4)

On the same substrate, a plurality of electrodes are provided for inputting high-frequency signals to a plurality of optical semiconductor elements, respectively, and an optical output waveguide for emitting light is provided with respect to the light emitting end face of the semiconductor optical integrated element. A semiconductor optical integrated device configured to emit light obliquely with respect to the light emitting end face,
A semiconductor optical integrated device, wherein the plurality of electrodes for inputting the high-frequency signal are arranged in a line or a plurality of rows in a direction orthogonal to a light emitting direction from the semiconductor optical integrated device. . The semiconductor optical integrated device according to claim 1,
A semiconductor optical integrated device, wherein the angle of the light output waveguide is inclined by 3 degrees or more with respect to the light emitting end face. The semiconductor optical integrated device according to claim 1 or 2,
When the number of the electrodes arranged in the same column is N, the electrode interval is D _MOD (μm), and the angle of the light emission direction from the semiconductor optical integrated device is θ ₂ (deg),
D _MOD × (N−1) × sin (θ ₂ )> 100 μm
A semiconductor optical integrated device characterized by the above. The optical semiconductor element according to any one of claims 1 to 3,
A semiconductor optical integrated device, which is an array device of a semiconductor laser integrated with a modulator, an array device of a semiconductor laser capable of direct modulation, or an array device of a modulator.

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