JP2011199675A - Method for manufacturing package, mask, method for manufacturing piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece - Google Patents

Abstract

PROBLEM TO BE SOLVED: To stably anodically bond by preventing the occurrence of discharge phenomenon in anodically bonding.SOLUTION: There is provided a method for manufacturing a package, wherein an electronic component is sealed in a cavity between a first substrate 50 and a second substrate which are anodically bonded to each other via a bonding film 35. The method includes: a recess forming step for forming a recess C1 for cavity on a bonding surface 50a of the first substrate 50; a mask disposing step for disposing a mask 70 having a covering member 71 for covering an opening of the recess C1 and a mesh member 73 for supporting the covering member 71 on the bonding surface 50a of the first substrate 50; and after the mask disposing step, a bonding film forming step for forming the bonding film 35 on the bonding surface 50a of the first substrate 50 via the mask 70.

Description

  The present invention relates to a package manufacturing method, a mask body, a piezoelectric vibrator manufacturing method, an oscillator, an electronic device, and a radio-controlled timepiece.

2. Description of the Related Art In recent years, a piezoelectric vibrator using a crystal or the like is used as a time source, a timing source such as a control signal, a reference signal source, or the like in a mobile phone or a portable information terminal device.
As this type of piezoelectric vibrator, for example, a surface mount type (SMD, Surface Mount Device) piezoelectric vibrator as shown in Patent Document 1 below is known. As shown in FIGS. 23 and 24, the piezoelectric vibrator 200 includes a base substrate 201 and a lid substrate 202 bonded to each other, and a piezoelectric vibration sealed in a cavity C formed between the substrates 201 and 202. And a piece 203.

The piezoelectric vibrating piece 203 is a tuning fork type vibrating piece, for example, and is mounted on the inner surface (upper surface) of the base substrate 201.
The base substrate 201 and the lid substrate 202 are, for example, glass substrates, and through holes 204 penetrating the base substrate 201 are formed in the base substrate 201 among them. A conductive member is embedded in the through hole 204 so as to close the inside, and this conductive member forms a through electrode 205. The through electrode 205 is electrically connected to the external electrode 206 formed on the outer surface (lower surface) of the base substrate 201 and is electrically connected to the piezoelectric vibrating piece 203 mounted in the cavity C. A bonding film 207 is formed over the entire surface of the lid substrate 202 facing the base substrate 201, and the base substrate 201 and the lid substrate 202 are anodically bonded via the bonding film 207.

  In this manner, the bonding film 207 can be easily formed by forming the bonding film 207 on the lid substrate 202 different from the base substrate 201 on which the through electrode 205 is formed. That is, when the bonding film 207 is formed on the base substrate 201, the bonding film is entirely formed on the surface facing the lid substrate 202 in order to prevent the through electrode 205 and the bonding film 207 from being electrically connected. It is necessary to perform patterning after forming 207, and it takes time to form the bonding film 207.

JP-A-6-283951

  Incidentally, in the process of manufacturing such a piezoelectric vibrator 200, as an anodic bonding method for anodic bonding of the base substrate 201 and the lid substrate 202 via the bonding film 207, the following method can be considered. That is, as shown in FIG. 25, after the base substrate 201 and the lid substrate 202 that are overlapped with each other are set on the electrode base portion 208 for anodic bonding, the bonding film 207 and the electrode base portion 208 are heated while being heated to the bonding temperature. A junction voltage is applied during Accordingly, a bonding voltage is applied between the bonding film 207 and the electrode base portion 208 in a state where ions in the base substrate 201 heated at the bonding temperature have fluidity. A current flows between the film 207. As a result, an electrochemical reaction can be caused at the interface between the bonding film 207 and the base substrate 201, and the two substrates 201 and 202 can be anodically bonded.

  However, in this anodic bonding method, the piezoelectric vibrating reed 203 electrically connected to the electrode table 208 via the through electrode 205 is close to the bonding film 207 located in the cavity C. When a bonding voltage is applied between the electrode plate portion 208 and the electrode base portion 208, a discharge phenomenon (spark discharge) may occur between the bonding film 207 and the piezoelectric vibrating piece 203.

  When the discharge phenomenon occurs as described above, there is a problem in that current does not sufficiently flow between the base substrate 201 and the bonding film 207 and anodic bonding is not performed. In addition, when the discharge phenomenon occurs even once, a discharge path is generated between the bonding film 207 and the piezoelectric vibrating piece 203 due to, for example, the bonding film 207 scattering and adhering to the piezoelectric vibrating piece 203. . For this reason, it becomes difficult to pass a current required for anodic bonding between the base substrate 201 and the bonding film 207, and anodic bonding between the two becomes impossible.

  The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a package manufacturing method capable of suppressing the occurrence of a discharge phenomenon during anodic bonding and stably performing anodic bonding. It is.

In order to solve the above problems, the present invention proposes the following means.
A method for manufacturing a package according to the present invention is a method for manufacturing a package capable of enclosing an electronic component in a cavity between a first substrate and a second substrate that are anodically bonded to each other via a bonding film. A mask body comprising: a concave portion forming step for forming a concave portion for the cavity on a bonding surface of one substrate; a covering member that covers the opening of the concave portion; and a mesh member that supports the covering member. A mask body disposing step of disposing the bonding film on the bonding surface; and a bonding film forming step of forming the bonding film on the bonding surface of the first substrate via the mask body after the mask body disposing step. It is characterized by having.

  In the present invention, the bonding film forming step is performed after the mask body arranging step, and the bonding film is formed on the bonding surface of the first substrate via the mask body. In other words, the bonding film is formed while covering the opening of the concave portion with the covering member and exposing the portion of the bonding surface that is not covered with the covering member through the opening region of the mesh member. Thereby, it is possible to form the bonding film on the portion of the bonding surface excluding the concave portion while suppressing the bonding film from being formed on the inner surface of the concave portion.

As described above, since the bonding film is formed on the bonding surface excluding the concave portion, the first substrate and the second substrate can be reliably anodic bonded via the bonding film.
On the other hand, since it is possible to prevent the bonding film from being formed on the inner surface of the concave portion, the electronic component sealed in the cavity and the bonding film can be separated from each other. Therefore, when the first substrate and the second substrate are anodic bonded via the bonding film, the occurrence of a discharge phenomenon can be suppressed and anodic bonding can be stably performed.

  In addition, since the mesh member supports the covering member, a plurality of covering members are supported by the mesh member even when a plurality of recesses are formed on the first substrate during the recess forming step. By disposing the body on the bonding surface of the first substrate, the openings of the plurality of recesses can be covered at a time. Therefore, the package can be manufactured efficiently.

  In addition, before the bonding film forming step, there may be a magnet arrangement step of arranging a magnet on which the covering member can be magnetized on a surface opposite to the bonding surface of the first substrate. .

In this case, by performing the mask body arranging step and the magnet arranging step, the covering member is magnetically attached to the magnet with the first substrate interposed therebetween, and the covering member is brought into close contact with the peripheral edge of the opening of the concave portion on the joint surface of the first substrate. Will be.
Here, since the magnet placement step is performed before the bonding film forming step, the covering member is in close contact with the peripheral edge of the opening of the concave portion in the bonding surface of the first substrate as described above during the bonding film forming step. It is possible to prevent a gap from being formed between the covering member and the peripheral edge of the opening of the first substrate. Thereby, it can suppress more reliably that a bonding film is formed in the inner surface of a recessed part.

  In the mask body placement step, the mask body may be placed with a gap between the joint surface of the first substrate and the mesh member.

  In this case, since the mask body is arranged with a gap between the bonding surface of the first substrate and the mesh member in the mask body arranging step, the mesh member of the bonding surface is formed in the bonding film forming step. A bonding film can also be formed through the opening region of the mesh member and the gap in a portion that overlaps with the non-opening region and is covered with the non-opening region.

  Further, the mask body according to the present invention is provided on the bonding surface of the first substrate in the package capable of enclosing the electronic component in the cavity between the first substrate and the second substrate that are anodically bonded to each other through the bonding film. A mask body for forming the bonding film, a covering member for covering the opening of the cavity recess formed on the bonding surface of the first substrate, and a mesh member for supporting the covering member And.

  According to this invention, since the covering member and the mesh member are provided, when the bonding film is formed on the bonding surface of the first substrate of the package, the bonding member is bonded to the bonding surface of the first substrate via the mask body. By forming the film, the bonding film is formed while covering the opening of the concave portion with the covering member and exposing the portion of the bonding surface that is not covered with the covering member through the opening region of the mesh member. Can do. Thereby, it is possible to form the bonding film on the portion of the bonding surface excluding the concave portion while suppressing the bonding film from being formed on the inner surface of the concave portion.

As described above, since the bonding film is formed on the bonding surface excluding the concave portion, the first substrate and the second substrate can be reliably anodic bonded via the bonding film.
On the other hand, since it is possible to prevent the bonding film from being formed on the inner surface of the concave portion, the electronic component sealed in the cavity and the bonding film can be separated from each other. Therefore, when the first substrate and the second substrate are anodic bonded via the bonding film, the occurrence of a discharge phenomenon can be suppressed and anodic bonding can be stably performed.

  Further, since the mesh member supports the covering member, even if a plurality of recesses are formed on the first substrate, the plurality of covering members are supported by the mesh member, and one mask body is the first. By arrange | positioning on the joint surface of a board | substrate, the opening part of a some recessed part can be covered at once. Therefore, the package can be manufactured efficiently.

  The method for manufacturing a piezoelectric vibrator according to the present invention includes a step of performing the method of manufacturing the package, and a step of arranging a piezoelectric vibrating piece as the electronic component inside the cavity. .

  According to the present invention, since the package manufacturing method is employed, the occurrence of a discharge phenomenon during anodic bonding is suppressed, and the first substrate and the second substrate are stably anodic bonded via the bonding film. Therefore, it is possible to manufacture a high-quality piezoelectric vibrator in which airtightness in the cavity is ensured.

The oscillator according to the present invention is characterized in that the piezoelectric vibrator manufactured by the piezoelectric vibrator manufacturing method is electrically connected to an integrated circuit as an oscillator.
The electronic device according to the present invention is characterized in that the piezoelectric vibrator manufactured by the method for manufacturing a piezoelectric vibrator is electrically connected to a time measuring unit.
The radio timepiece according to the present invention is characterized in that the piezoelectric vibrator manufactured by the method for manufacturing a piezoelectric vibrator is electrically connected to the filter portion.

  Since the oscillator, the electronic device, and the radio timepiece according to the present invention include the high-quality piezoelectric vibrator, the quality can be improved similarly.

  According to the present invention, generation of a discharge phenomenon during anodic bonding can be suppressed, and anodic bonding can be stably performed.

1 is an external perspective view showing a piezoelectric vibrator according to an embodiment of the present invention. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a plan view with a lid substrate removed. It is sectional drawing in the AA of FIG. FIG. 2 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 1. It is a top view of a piezoelectric vibrating piece. It is a bottom view of a piezoelectric vibrating piece. It is sectional drawing in the BB line of FIG. 3 is a flowchart of a method for manufacturing a piezoelectric vibrator according to an embodiment of the present invention. It is a disassembled perspective view of a wafer body. It is explanatory drawing showing a penetration electrode formation process. It is explanatory drawing showing a penetration electrode formation process. It is a top view of a mask body. It is an enlarged view of the principal part of a mask body. It is sectional drawing in CC line of FIG. It is explanatory drawing of the manufacturing method of a mask body. It is explanatory drawing showing a mask body arrangement | positioning process and a magnet arrangement | positioning process. It is explanatory drawing showing a bonding film film-forming process. It is explanatory drawing showing a detachment | leave process. It is explanatory drawing showing a joining process. It is a block diagram which shows one Embodiment of an oscillator. It is a lineblock diagram showing one embodiment of electronic equipment. It is a block diagram which shows one Embodiment of a radio timepiece. It is an internal structure figure of the conventional piezoelectric vibrator, and is a figure which looked at a piezoelectric vibration piece from the upper part in the state where a lid substrate was removed. It is sectional drawing of the piezoelectric vibrator shown in FIG. FIG. 24 is a diagram showing a step in manufacturing the piezoelectric vibrator shown in FIG. 23.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
(Piezoelectric vibrator)
As shown in FIGS. 1 to 4, the piezoelectric vibrator 1 according to this embodiment includes a piezoelectric vibrating piece 4 as an electronic component in a cavity C formed between a plurality of substrates 2 and 3 bonded to each other. It is a surface mount type configuration including the package 5 enclosed. The package 5 is formed in a box shape in which a base substrate (first substrate) 2 and a lid substrate 3 are laminated in two layers. In FIG. 4, the excitation electrode 15, the extraction electrodes 19 and 20, the mount electrodes 16 and 17, and the weight metal film 21, which will be described later, are omitted for easy understanding of the drawing.

  As shown in FIGS. 5 to 7, the piezoelectric vibrating piece 4 is a tuning fork type vibrating piece formed of a piezoelectric material such as crystal, lithium tantalate, or lithium niobate, and when a predetermined voltage is applied. It vibrates.

The piezoelectric vibrating reed 4 includes a pair of vibrating arm portions 10 and 11 arranged in parallel, a base portion 12 that integrally fixes the base end sides of the pair of vibrating arm portions 10 and 11, and a pair of vibrating arm portions 10. , 11 and the first excitation electrode 13 and the second excitation electrode 14, which are formed on the outer surface of the pair 11 and vibrate the pair of vibrating arm portions 10, 11, the first excitation electrode 13, and the second excitation electrode 13. And two mounting electrodes 16 and 17 electrically connected to the two excitation electrodes 14.
In addition, the piezoelectric vibrating reed 4 according to the present embodiment includes groove portions 18 formed along the longitudinal direction of the vibrating arm portions 10 and 11 on both main surfaces of the pair of vibrating arm portions 10 and 11. The groove portion 18 is formed from the proximal end side of the vibrating arm portions 10 and 11 to the vicinity of the middle.

  As shown in FIGS. 5 and 6, the excitation electrodes 13 and 14 are formed on the main surfaces of the pair of vibrating arm portions 10 and 11. The excitation electrodes 13 and 14 are formed of a single-layer conductive film such as chromium (Cr), for example. The excitation electrode 15 including the first excitation electrode 13 and the second excitation electrode 14 is an electrode that vibrates the pair of vibrating arm portions 10 and 11 at a predetermined resonance frequency in a direction approaching or separating from each other. Patterned on the outer surfaces of the vibrating arm portions 10 and 11 while being electrically separated from each other. Specifically, the first excitation electrode 13 is mainly formed on the groove portion 18 of one vibration arm portion 10 and on both side surfaces of the other vibration arm portion 11, and the second excitation electrode 14 is formed on one side. Are formed mainly on both side surfaces of the vibrating arm portion 10 and on the groove portion 18 of the other vibrating arm portion 11.

Further, the first excitation electrode 13 and the second excitation electrode 14 are electrically connected to the mount electrodes 16 and 17 via the extraction electrodes 19 and 20 on both main surfaces of the base portion 12, respectively. A voltage is applied to the piezoelectric vibrating reed 4 via the mount electrodes 16 and 17.
The mount electrodes 16 and 17 and the lead electrodes 19 and 20 are, for example, a laminated film of chromium (Cr) and gold (Au), and are formed on the surface after forming a chromium film having good adhesion with crystal as a base. A gold thin film is applied.

  A weight metal film 21 for adjusting (frequency adjustment) to vibrate its own vibration state within a predetermined frequency range is coated on the tips of the pair of vibrating arm portions 10 and 11. The weight metal film 21 is divided into a coarse adjustment film 21a used when the frequency is roughly adjusted and a fine adjustment film 21b used when the frequency is finely adjusted. By adjusting the frequency using the coarse adjustment film 21a and the fine adjustment film 21b, the frequency of the pair of vibrating arm portions 10 and 11 can be kept within the range of the nominal frequency of the device.

  As shown in FIGS. 3 and 4, the piezoelectric vibrating reed 4 configured in this manner is bump-bonded to the inner surface (upper surface) of the base substrate 2 using bumps B such as gold. More specifically, bump bonding is performed with a pair of mount electrodes 16 and 17 in contact with two bumps B formed on lead electrodes 36 and 37 (described later) patterned on the inner surface of the base substrate 2. ing.

The lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda lime glass, and is formed in a plate shape as shown in FIGS.
As shown in FIG. 3, a rectangular recess C <b> 1 in which the piezoelectric vibrating reed 4 is accommodated is formed on the bonding surface (inner surface, lower surface) 3 a side to which the base substrate 2 is bonded in the lid substrate 3. The recess C1 is a cavity recess that becomes the cavity C that accommodates the piezoelectric vibrating reed 4 when the substrates 2 and 3 are overlapped. The concave portion C1 has a rectangular shape in plan view when viewed from the normal direction of the lid substrate 3, and the vertical cross-sectional width along the normal direction of the concave portion C1 is the bonding surface from the bonding surface 3a side of the lid substrate 3. It becomes gradually smaller toward the outer surface 3b side opposite to 3a.

A bonding film 35 for anodic bonding is formed on the bonding surface 3 a of the lid substrate 3. The bonding film 35 is made of a conductive material such as aluminum, and is formed by a film forming method such as sputtering or CVD. The bonding film 35 is formed on a portion of the bonding surface 3a excluding the concave portion C1, and is not formed on the inner surface of the concave portion C1.
The lid substrate 3 is anodically bonded to the base substrate 2 via the bonding film 35 with the recess C1 facing the base substrate 2 side.

Similarly to the lid substrate 3, the base substrate 2 is a transparent insulating substrate made of a glass material, for example, soda lime glass, and is formed in a plate shape as shown in FIGS.
In the base substrate 2, a pair of through holes 30 and 31 that penetrate the base substrate 2 are formed. The through holes 30 and 31 are formed in a reverse taper shape that gradually increases in diameter from the inner surface of the base substrate 2 toward the outer surface (lower surface). In the present embodiment, the through holes 30 and 31 have one through hole 30 formed at a position corresponding to the base 12 side of the mounted piezoelectric vibrating reed 4, and at a position corresponding to the tip side of the vibrating arm sections 10 and 11. The other through hole 31 is formed.

  The pair of through holes 30 and 31 are formed with a pair of through electrodes 32 and 33 formed so as to fill the through holes 30 and 31. As shown in FIG. 3, the through electrodes 32 and 33 are formed by the cylindrical body 6 and the core member 7 that are integrally fixed to the through holes 30 and 31 by firing. 31 are completely closed to maintain the airtightness in the cavity C, and the external electrodes 38 and 39, which will be described later, and the routing electrodes 36 and 37 are electrically connected.

  The cylindrical body 6 is obtained by firing a paste-like glass frit 6a described later. The cylindrical body 6 is formed in a cylindrical shape having both ends flat and substantially the same thickness as the base substrate 2. And the core part 7 is distribute | arranged to the center of the cylinder 6 so that the cylinder 6 may be penetrated. The cylindrical body 6 and the core member 7 are fired in a state of being embedded in the through holes 30 and 31 and are firmly fixed to the through holes 30 and 31.

  The core material portion 7 is a conductive core material formed in a cylindrical shape from a metal material such as stainless steel, silver, or aluminum. Both ends are flat like the cylindrical body 6 and substantially the same as the thickness of the base substrate 2. It is formed to have a thickness. The core member 7 is located at the approximate center 6 c of the cylindrical body 6 and is firmly fixed to the cylindrical body 6 by firing the cylindrical body 6. The through electrodes 32 and 33 are ensured to have electrical conductivity through the conductive core portion 7.

  The pair of lead electrodes 36 and 37 electrically connect one of the pair of through electrodes 32 and 33 to the one mount electrode 16 of the piezoelectric vibrating reed 4 and the other through electrode. 33 and the other mount electrode 17 of the piezoelectric vibrating reed 4 are patterned so as to be electrically connected.

  More specifically, the one lead-out electrode 36 is formed directly above the one through electrode 32 so as to be positioned directly below the base 12 of the piezoelectric vibrating piece 4. The other routing electrode 37 is routed from the position adjacent to the one routing electrode 36 along the vibrating arm portions 10 and 11 to the distal end side of the vibrating arm portions 10 and 11, and then the other through electrode 33. It is formed so that it may be located just above.

  Bumps B are formed on the pair of lead-out electrodes 36 and 37, and the piezoelectric vibrating reed 4 is mounted using the bumps B. Thereby, one mount electrode 16 of the piezoelectric vibrating reed 4 is electrically connected to one through electrode 32 through one routing electrode 36, and the other mount electrode 17 is passed through the other routing electrode 37 to the other penetration electrode. The electrode 33 is electrically connected.

  Further, as shown in FIGS. 1, 3 and 4, external electrodes 38 and 39 are formed on the outer surface of the base substrate 2 so as to be electrically connected to the pair of through electrodes 32 and 33, respectively. . That is, one external electrode 38 is electrically connected to the first excitation electrode 13 of the piezoelectric vibrating reed 4 via one through electrode 32 and one routing electrode 36. The other external electrode 39 is electrically connected to the second excitation electrode 14 of the piezoelectric vibrating reed 4 via the other through electrode 33 and the other routing electrode 37.

  When the piezoelectric vibrator 1 configured as described above is operated, a predetermined drive voltage is applied to the external electrodes 38 and 39 formed on the base substrate 2. As a result, a voltage is applied to the excitation electrode 15 including the first excitation electrode 13 and the second excitation electrode 14 of the piezoelectric vibrating reed 4 so that the pair of vibrating arm portions 10 and 11 are moved in a predetermined direction in the direction of approaching and separating. Can be vibrated at a frequency of The vibration of the pair of vibrating arm portions 10 and 11 can be used as a time source, a timing source for control signals, a reference signal source, and the like.

(Piezoelectric vibrator manufacturing method)
Next, a method for manufacturing the piezoelectric vibrator 1 (a method for manufacturing a package) in the present embodiment will be described based on a flowchart shown in FIG.
First, the piezoelectric vibrating reed manufacturing step S10 is performed to manufacture the piezoelectric vibrating reed 4 shown in FIGS. Specifically, a quartz Lambert rough is first sliced at a predetermined angle to obtain a wafer having a constant thickness. Subsequently, the wafer is lapped and roughly processed, and then the work-affected layer is removed by etching, and then mirror polishing such as polishing is performed to obtain a wafer having a predetermined thickness. Subsequently, after appropriate processing such as cleaning is performed on the wafer, the wafer is patterned with the outer shape of the piezoelectric vibrating reed 4 by a photolithography technique, and a metal film is formed and patterned, and the excitation electrode 15 and the extraction electrode 15 are extracted. Electrodes 19 and 20, mount electrodes 16 and 17, and weight metal film 21 are formed. Thereby, the some piezoelectric vibrating piece 4 is producible.

  Further, after the piezoelectric vibrating reed 4 is manufactured, the resonance frequency is coarsely adjusted. This is done by irradiating the coarse adjustment film 21a of the weight metal film 21 with laser light to evaporate a part thereof and changing the weight. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting.

  Next, as shown in FIG. 9, a base substrate wafer 40 that will later become the base substrate 2 (see FIG. 3) is manufactured at the same time as or before or after the above-described process until the state immediately before anodic bonding is performed. A wafer manufacturing step S30 is performed.

Specifically, first, after polishing and cleaning soda-lime glass to a predetermined thickness, the disk-shaped base substrate wafer 40 is formed by removing the outermost processing-affected layer by etching or the like (S31). .
Next, as shown in FIG. 3, a through electrode forming step S <b> 32 for forming through electrodes 32 and 33 that penetrate the base substrate 2 in the thickness direction and conduct the inside of the cavity C and the outside of the piezoelectric vibrator 1 is performed. Do. Details of the through electrode forming step S32 will be described below.

  In the through electrode forming step S32, first, as shown in FIG. 10, through holes 30 and 31 are formed in the base substrate wafer 40 by, for example, sandblasting or the like, penetrating in the thickness direction of the base substrate wafer 40. Step S32A is performed. At this time, in this embodiment, the through holes 30 and 31 are formed in a reverse taper shape in which the diameter gradually increases from the inner surface side of the base substrate wafer 40 toward the outer surface side opposite to the inner surface. The outer surface and the inner surface of the base substrate wafer 40 are the outer surface and the inner surface of the subsequent base substrate 2, respectively.

  Next, the core material portion 7 of the conductive casing 9 including the core material portion 7 constituting a part of the through electrodes 32 and 33 and the base portion 8 on which the core material portion 7 is erected is penetrated. A housing arrangement process S32B to be inserted into the holes 30 and 31 is performed. At this time, the core portion 7 of the housing 9 is inserted from the inner surface of the base substrate wafer 40. As a result, the inner surface of the base substrate wafer 40 and the surface of the base portion 8 of the housing 9 come into contact with each other, and the through holes 30 and 31 are closed from the inner surface side.

  Next, as shown in FIG. 11, a filling step S <b> 32 </ b> D is performed to fill the through holes 30 and 31 with the paste-like glass frit 6 a constituting a part of the through electrodes 32 and 33. At this time, the glass frit 6 a is filled into the through holes 30 and 31 from the outer surface side of the base substrate wafer 40. Here, since the through holes 30 and 31 are closed from the inner surface side of the base substrate wafer 40, the glass frit 6 a is suppressed from leaking from the inner surface side of the through holes 30 and 31.

  In addition, after finishing glass frit filling process S32D, the glass frit 6a may remain on the outer surface of the base substrate wafer 40 in some cases. In this case, since the glass frit 6a on the outer surface is removed by a polishing step S32I after firing described later, it is not necessary to perform a separate step of removing the glass frit 6a. However, by adding a step of removing the glass frit 6a separately, the firing time of the glass frit 6a can be shortened in the firing step S32H described later, and the time required for polishing in the polishing step S32I can be shortened.

  Subsequently, a firing step S32H is performed in which the glass frit 6a filled in the through holes 30 and 31 is fired and cured. In the firing step S32H, the glass frit 6a filled in the through holes 30 and 31 is fired and cured at a predetermined temperature. By performing this firing step S32H, the glass frit 6a is firmly fixed to the through holes 30 and 31 and the core member 7 to form the cylindrical body 6, and the through electrodes 32 and 33 are formed.

Finally, a polishing step S32I for polishing the base substrate wafer 40 and the base portion 8 of the housing 9 is performed. Specifically, the outer surface side of the base substrate wafer 40 is polished to expose the tip of the core material portion 7 and the base portion 8 of the housing 9 is polished and removed. As a result, as shown in FIG. 3, it is possible to obtain a plurality of through electrodes 32 and 33 in which the cylindrical body 6 and the core member 7 are integrally fixed.
Thus, the through electrode forming step S32 is completed.

Next, as shown in FIG. 9, a plurality of routing electrodes 36 and 37 that are electrically connected to the through electrodes 32 and 33, respectively, are formed in the routing electrode forming step S33. Then, spire-shaped bumps B each made of gold or the like are formed on the routing electrodes 36 and 37. In FIG. 9, the illustration of the bumps B is omitted for easy viewing of the drawing.
At this point, the second wafer manufacturing process is completed.

  Next, a first wafer for producing a lid substrate wafer (first substrate) 50, which will later become the lid substrate 3 (see FIG. 3), to the state immediately before anodic bonding, at the same time as the above process or before and after. Manufacturing process S20 is performed.

  Specifically, first, a soda-lime glass is polished to a predetermined thickness and washed, and then a disk-shaped lid substrate wafer 50 is formed by removing the outermost work-affected layer by etching or the like (S21). . Next, a recess forming step S22 for forming a plurality of cavity recesses C1 in the matrix direction by etching or the like is performed on the bonding surface 50a of the lid substrate wafer 50 with the base substrate wafer 40, and the bonding surface 50a is polished. A surface polishing step S23 is performed. The bonding surface 50 a of the lid substrate wafer 50 will later become the bonding surface 3 a of the lid substrate 3.

Next, as shown in FIGS. 12 to 14, a mask body arrangement step S <b> 24 is performed in which a mask body 70 for forming the bonding film 35 is arranged on the bonding surface 50 a of the lid substrate wafer 50. The bonding surface 50 a of the lid substrate wafer 50 will later become the bonding surface 3 a of the lid substrate 3.
Here, as shown in FIG. 12, the mask body 70 includes a covering member 71 that covers the opening of the recess C <b> 1, a mesh member 73 that supports the covering member 71, and a frame member that is fixed to the outer peripheral edge of the mesh member 73. 74.

  As shown in FIG. 13, the mesh member 73 includes a plurality of warp yarns 72a and a plurality of weft yarns 72b formed of, for example, stainless steel (SUS). The plurality of warp yarns 72 a and the plurality of weft yarns 72 b are knitted together to form a lattice, and constitute a non-opening region 73 A of the mesh member 73.

In other words, the plurality of warp yarns 72a extend in the longitudinal direction D1 and are arranged at equal intervals in the transverse direction D2 orthogonal to the longitudinal direction D1. The plurality of weft threads 72b extend in the transverse direction D2 and are arranged at equal intervals in the longitudinal direction D1. Each warp yarn 72a extends in the longitudinal direction D1 across the plurality of weft yarns 72b so as to be positioned on the upper side or the lower side with respect to all the weft yarns 72b. Each weft thread 72b extends in the transverse direction D2 so as to be alternately positioned above and below the warp threads 72a adjacent to each other in the transverse direction D2, and is knitted into a plurality of warp threads 72a.
A gap (mesh) surrounded by the warp yarns 72 a and the weft yarns 72 b knitted together in this way is an opening region 73 B of the mesh member 73.

The diameter of the warp yarn 72a and the diameter of the weft yarn 72b are each 30 μm, for example. The warp yarns 72a are arranged so that 300 yarns per inch are juxtaposed in the lateral direction D2, and the weft yarns 72b are arranged so that 300 yarns per inch are juxtaposed in the longitudinal direction D1.
Also, in FIGS. 12 to 14 and FIGS. 15 to 17 shown below, the number of warp yarns 72a and weft yarns 72b of the mesh member 73 is omitted and the size and the like are exaggerated for easy understanding of the drawings. The number and size of the warp yarns 72a and the weft yarns 72b are not limited to the illustrated example.

As shown in FIG. 14, the covering member 71 is a plate-like body formed of, for example, stainless steel (SUS), and is bonded to the mesh member 73 via an adhesive layer 75.
As shown in FIG. 12, the frame member 74 has an annular shape in plan view, and the opening of the frame member 74 has the same shape and size as the lid substrate wafer 50, for example.

  As shown in FIG. 15, when manufacturing the mask body 70, first, after attaching a frame member 74 to a mesh member 73 formed by weaving warp yarns 72 a and weft yarns 72 b, a film is formed on the surface of the mesh member 73. A material plate 71 a that will later become the covering member 71 is attached to the mesh member 73 through the adhesive 75 a applied in a shape. Then, the mask body 70 is formed by removing the material plate 71a and the adhesive 75a, for example, by etching or the like so that the material plate 71a has the outer diameter shape of the covering member 71.

  In the mask body placement step S24 using the mask body 70 configured as described above, as shown in FIG. 16, the mask is formed with a gap S between the bonding surface 50a of the lid substrate wafer 50 and the mesh member 73. The body 70 is arranged. In the present embodiment, the mask body 70 is positioned while being aligned with the lid substrate wafer 50 with the covering member 71 facing the lid substrate wafer 50 side.

Further, a magnet placement step S25 is performed in which a magnet 76 on which the covering member 71 can be magnetized is placed on the outer surface 50b opposite to the bonding surface 50a of the lid substrate wafer 50. The outer surface 50 b of the lid substrate wafer 50 will later become the outer surface 3 b of the lid substrate 3.
The magnet 76 is a plate-like permanent magnet. In this magnet arranging step S25, the magnet 76 is brought into contact with or close to the outer surface 50b of the lid substrate wafer 50 over the entire surface.

  Here, when the closing body arranging step S24 and the magnet arranging step S25 are performed, the covering member 71 is magnetized by the magnet 76 arranged on the outer surface 50b of the lid substrate wafer 50 with the lid substrate wafer 50 interposed therebetween. 76 will be magnetically attached. As a result, the covering member 71 is brought into close contact with the peripheral edge of the opening of the recess C <b> 1 in the bonding surface 50 a of the lid substrate wafer 50, and a gap is prevented from being formed between the covering member 71 and the lid substrate wafer 50.

As shown in FIG. 17, after performing the mask body arranging step S24 and the magnet arranging step S25, a bonding film forming step S26 for forming the bonding film 35 by a film forming method such as sputtering or CVD is performed.
At this time, the bonding film 35 is formed on the bonding surface 50 a of the lid substrate wafer 50 via the mask body 70. That is, the bonding film 35 is formed while the portion of the bonding surface 50a that is not covered by the covering member 71 is exposed through the opening region 73B of the mesh member 73 while the opening of the recess C1 is covered by the covering member 71. . As a result, the bonding film 35 can be formed on a portion of the bonding surface 50a excluding the depression C1 while suppressing the bonding film 35 from being formed on the inner surface of the depression C1.

At this time, as described above, the covering member 71 comes into close contact with the peripheral edge of the opening of the recess C1 in the lid substrate wafer 50, and it is possible to suppress a gap from being formed between the covering member 71 and the lid substrate wafer 50. . Thereby, it can suppress more reliably that the joining film | membrane 35 is formed into a film in the inner surface of the recessed part C1.
Further, at this time, since the mask body 70 is disposed with a gap S between the bonding surface 50a of the lid substrate wafer 50 and the mesh member 73, the mesh member 73 overlaps with the mesh member 73 in the bonding surface 50a. The bonding film 35 can also be formed on the portion covered with the non-opening region 73A through the opening region 73B and the gap S of the mesh member 73.

Since the bonding surface polishing step S23 is performed before the bonding film forming step S26, the flatness of the surface of the bonding film 35 is ensured, and stable bonding with the base substrate wafer 40 can be realized. .
Next, as shown in FIG. 18, a separation step S <b> 27 for separating the mask body 70 and the magnet 76 from the lid substrate wafer 50 is performed.
At this point, the first wafer manufacturing process is completed.

  Next, a mounting step S40 is performed in which the piezoelectric vibrating reed 4 is bonded to the lead electrodes 36 and 37 of the base substrate wafer 40 via the bumps B and mounted on the through electrodes 32 and 33, and then the base substrate wafer is mounted. 40, a superimposition step S50 for superimposing the lid substrate wafer 50 is performed.

As shown in FIG. 19, after the overlaying step S50, a joining step S60 for forming the wafer body 60 by anodically joining the two superposed wafers is performed.
Here, the anodic bonding apparatus 85 used in the bonding step S60 will be described. The anodic bonding apparatus 85 includes an application unit 88 including an electrode base portion 86 on which the base substrate wafer 40 can be placed and a film electrode 87 that can be electrically bonded to the bonding film 35.

The electrode table 86 is a conductive plate-like member formed so as to be equal to or larger than the base substrate wafer 40 in plan view. Examples of the conductive plate member include stainless steel (SUS). The electrode base 86 functions as a negative terminal of the application unit 88, for example. The film electrode 87 functions as a positive terminal of the application unit 88, for example.
In FIG. 19, a portion corresponding to one piezoelectric vibrator 1 is illustrated for each of the base substrate wafer 40 and the lid substrate wafer 50.

  In this bonding step S60, first, of the two stacked wafers, the outer surface of the base substrate wafer 40 is placed on the electrode table 86 for anodic bonding, and the film electrode 87 of the applying means 88 is bonded. It is electrically connected to the membrane 35. Next, a bonding voltage (for example, 600 V to 800 V) is applied between the bonding film 35 and the electrode base 86 while heating to a bonding temperature (for example, 200 ° C. to 300 ° C.).

  Then, an electrochemical reaction occurs at the interface between the bonding film 35 and the base substrate wafer 40, and both of them are anodic bonded. As a result, the piezoelectric vibrating piece 4 is sealed in the cavity C, and the wafer body 60 shown in FIG. 9 in which the base substrate wafer 40 and the lid substrate wafer 50 are bonded can be obtained.

  By the way, when performing anodic bonding, as shown in FIG. 3, the through holes 30 and 31 formed in the base substrate wafer 40 are completely closed by the through electrodes 32 and 33. The vacuum state is not impaired through the through holes 30 and 31. In addition, since the cylindrical body 6 and the core member 7 are integrally fixed by firing and these are firmly fixed to the through holes 30 and 31, the vacuum state in the cavity C is reliably ensured. Can be maintained.

  After the anodic bonding described above is completed, a conductive material is patterned on the outer surface of the base substrate wafer 40, and a pair of external electrodes 38, 39 (which are electrically connected to the pair of through electrodes 32, 33, respectively) An external electrode forming step S70 for forming a plurality of (see FIG. 3) is performed.

Next, in the state of the wafer body 60, a fine adjustment step of finely adjusting the frequency of each piezoelectric vibrator 1 sealed in the cavity C to be within a predetermined range is performed (S80).
After the fine adjustment of the frequency is completed, a cutting process is performed in which the bonded wafer body 60 is cut along the cutting line M to make pieces (S90).
Thereafter, the internal electrical characteristic inspection (S100) is performed, whereby the manufacture of the piezoelectric vibrator 1 is completed.

As described above, according to the method for manufacturing a piezoelectric vibrator according to the present embodiment, the bonding film 35 is formed on the bonding surface 50a excluding the concave portion C1, and therefore, the bonding film 35 is interposed via the bonding film 35. The lid substrate wafer 50 and the base substrate wafer 40 can be reliably anodically bonded.
On the other hand, since the bonding film 35 is prevented from being formed on the inner surface of the recess C1, the piezoelectric vibrating reed 4 enclosed in the cavity and the bonding film 35 can be separated. Therefore, when the lid substrate wafer 50 and the base substrate wafer 40 are anodic bonded via the bonding film 35, the occurrence of a discharge phenomenon can be suppressed and stable anodic bonding can be achieved. Thereby, the high quality piezoelectric vibrator 1 in which the airtightness in the cavity C is ensured can be manufactured.

  Further, since the mesh member 73 supports the covering member 71, the plurality of covering members 71 are meshed even when the plurality of recessed portions C <b> 1 are formed in the lid substrate wafer 50 during the recessed portion forming step S <b> 22. 73, by supporting one mask body 70 on the bonding surface 50a of the lid substrate wafer 50, the openings of the plurality of recesses C1 can be covered at one time. Therefore, the piezoelectric vibrator 1 (package 5) can be manufactured efficiently.

(Oscillator)
Next, an embodiment of an oscillator according to the present invention will be described with reference to FIG.
As shown in FIG. 20, the oscillator 110 according to the present embodiment is configured by configuring the piezoelectric vibrator 1 as an oscillator electrically connected to the integrated circuit 111. The oscillator 110 includes a substrate 113 on which an electronic element component 112 such as a capacitor is mounted. An integrated circuit 111 for an oscillator is mounted on the substrate 113, and the piezoelectric vibrating piece 4 of the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 111. The electronic element component 112, the integrated circuit 111, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).

In the oscillator 110 configured as described above, when a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 4 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 4 and input to the integrated circuit 111 as an electric signal. The input electrical signal is subjected to various processes by the integrated circuit 111 and output as a frequency signal. Thereby, the piezoelectric vibrator 1 functions as an oscillator.
In addition, by selectively setting the configuration of the integrated circuit 111, for example, an RTC (real-time clock) module or the like as required, the operation date and time of the device or external device in addition to a single-function oscillator for a clock, etc. A function for controlling the time, providing a time, a calendar, and the like can be added.

  According to the oscillator 110 of the present embodiment as described above, since the high-quality piezoelectric vibrator 1 is provided, the quality can be improved.

(Electronics)
Next, an embodiment of an electronic apparatus according to the invention will be described with reference to FIG. Note that a portable information device 120 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device.
First, the portable information device 120 of this embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the prior art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen. Further, when used as a communication device, it is possible to perform communication similar to that of a conventional mobile phone by using a speaker and a microphone that are removed from the wrist and incorporated in the inner portion of the band. However, it is much smaller and lighter than conventional mobile phones.

  Next, the configuration of the portable information device 120 of this embodiment will be described. As shown in FIG. 21, the portable information device 120 includes the piezoelectric vibrator 1 and a power supply unit 121 for supplying power. The power supply unit 121 is made of, for example, a lithium secondary battery. The power supply unit 121 includes a control unit 122 that performs various controls, a clock unit 123 that counts time, a communication unit 124 that communicates with the outside, a display unit 125 that displays various information, and the like. A voltage detection unit 126 that detects the voltage of the functional unit is connected in parallel. Power is supplied to each functional unit by the power supply unit 121.

  The control unit 122 controls each function unit to control operation of the entire system such as transmission and reception of audio data, measurement and display of the current time, and the like. The control unit 122 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area for the CPU.

  The timer unit 123 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1. When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 4 vibrates, and the vibration is converted into an electric signal by the piezoelectric characteristics of the crystal and is input to the oscillation circuit as an electric signal. The output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 122 via the interface circuit, and the current time, current date, calendar information, and the like are displayed on the display unit 125.

The communication unit 124 has functions similar to those of a conventional mobile phone, and includes a radio unit 127, a voice processing unit 128, a switching unit 129, an amplification unit 130, a voice input / output unit 131, a telephone number input unit 132, a ring tone generation unit. 133 and a call control memory unit 134.
The radio unit 127 exchanges various data such as audio data with the base station via the antenna 135. The audio processing unit 128 encodes and decodes the audio signal input from the radio unit 127 or the amplification unit 130. The amplifying unit 130 amplifies the signal input from the audio processing unit 128 or the audio input / output unit 131 to a predetermined level. The voice input / output unit 131 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.

In addition, the ring tone generator 133 generates a ring tone in response to a call from the base station. The switching unit 129 switches the amplifying unit 130 connected to the voice processing unit 128 to the ringing tone generating unit 133 only when an incoming call is received, so that the ringing tone generated by the ringing tone generating unit 133 passes through the amplifying unit 130. To the audio input / output unit 131.
Note that the call control memory unit 134 stores a program related to incoming / outgoing call control of communication. The telephone number input unit 132 includes, for example, number keys from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.

  The voltage detection unit 126 detects the voltage drop and notifies the control unit 122 when the voltage applied to each functional unit such as the control unit 122 by the power supply unit 121 falls below a predetermined value. . The predetermined voltage value at this time is a value set in advance as a minimum voltage necessary to stably operate the communication unit 124, and is, for example, about 3V. Upon receiving the voltage drop notification from the voltage detection unit 126, the control unit 122 prohibits the operations of the radio unit 127, the voice processing unit 128, the switching unit 129, and the ring tone generation unit 133. In particular, it is essential to stop the operation of the wireless unit 127 with high power consumption. Further, the display unit 125 displays that the communication unit 124 has become unusable due to insufficient battery power.

That is, the operation of the communication unit 124 can be prohibited by the voltage detection unit 126 and the control unit 122, and that effect can be displayed on the display unit 125. This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 125.
In addition, the function of the communication part 124 can be stopped more reliably by providing the power supply cutoff part 136 that can selectively cut off the power of the part related to the function of the communication part 124.

  According to the portable information device 120 of the present embodiment, since the high-quality piezoelectric vibrator 1 is provided, the quality can be improved.

(Radio watch)
Next, an embodiment of a radio timepiece according to the present invention will be described with reference to FIG.
As shown in FIG. 22, the radio-controlled timepiece 140 according to the present embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 141, and receives a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
In Japan, there are transmitting stations (transmitting stations) that transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves. Long waves such as 40 kHz or 60 kHz have both the property of propagating the ground surface and the property of propagating while reflecting the ionosphere and the ground surface, so the propagation range is wide, and the above two transmitting stations cover all of Japan. is doing.

Hereinafter, the functional configuration of the radio timepiece 140 will be described in detail.
The antenna 142 receives a long standard wave of 40 kHz or 60 kHz. The long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave. The received long standard wave is amplified by the amplifier 143 and filtered and tuned by the filter unit 141 having the plurality of piezoelectric vibrators 1.
The piezoelectric vibrator 1 according to this embodiment includes crystal vibrator portions 148 and 149 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency.

Further, the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 144.
Subsequently, the time code is taken out via the waveform shaping circuit 145 and counted by the CPU 146. The CPU 146 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 148, and accurate time information is displayed.
Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator portions 148 and 149 are preferably vibrators having the tuning fork type structure described above.

  In addition, although the above-mentioned description was shown in the example in Japan, the frequency of the long standard wave is different overseas. For example, in Germany, a standard radio wave of 77.5 KHz is used. Therefore, when the radio timepiece 140 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.

  According to the radio-controlled timepiece 140 of this embodiment, since the high-quality piezoelectric vibrator 1 is provided, the quality can be improved.

The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above-described embodiment, the method for manufacturing a piezoelectric vibrator includes the magnet arrangement step S25.

  In the above embodiment, the mask body 70 is disposed with the gap S between the bonding surface 50a of the lid substrate wafer 50 and the mesh member 73 in the mask body placement step S24. You may arrange without opening.

Moreover, in the said embodiment, although the filler filled in the through-holes 30 and 31 shall be the paste-like glass frit 6a, it is not restricted to this. For example, a conductive paste (for example, a silver paste) may be used. In this case, the core member 7 may not be provided, and the housing 9 may not be used when the piezoelectric vibrator 1 (package 5) is manufactured.
Furthermore, in the above-described embodiment, the through holes 30 and 31 are formed in a reverse taper shape that gradually increases in diameter from the inner surface to the outer surface of the base substrate 2. The holes 30 and 31 may be used.

  In the above embodiment, the piezoelectric vibrator 1 is manufactured by enclosing the piezoelectric vibrating reed 4 inside the package 5 while using the package manufacturing method according to the present invention. However, the piezoelectric vibrating reed 4 inside the package 5 is manufactured. It is also possible to manufacture devices other than piezoelectric vibrators by enclosing other electronic components.

  In addition, it is possible to appropriately replace the constituent elements in the embodiment with known constituent elements without departing from the spirit of the present invention, and the above-described modified examples may be appropriately combined.

1 Piezoelectric vibrator 2 Base substrate (second substrate)
3 Lid board (first board)
4 Piezoelectric vibrating piece (electronic component)
5 Package 35 Bonding film 40 Base substrate wafer (second substrate)
50 Lid substrate wafer (first substrate)
50a Bonding surface 50b Outer surface (surface opposite to the bonding surface)
70 Mask body 71 Cover member 73 Mesh member 76 Magnet 110 Oscillator 120 Portable information device (electronic device)
140 Radio-controlled watch C Cavity C1 Cavity recess S Clearance

Claims (8)

A method of manufacturing a package capable of enclosing an electronic component in a cavity between a first substrate and a second substrate that are anodically bonded to each other via a bonding film,
Forming a recess for the cavity on the bonding surface of the first substrate; and
A mask body disposing step of disposing a mask body on the joint surface of the first substrate, the covering body covering the opening of the recess, and a mesh member supporting the covering member;
And a bonding film forming step of forming the bonding film on the bonding surface of the first substrate via the mask body after the mask body arranging step. A method of manufacturing a package according to claim 1,
Before the bonding film forming step, there is provided a magnet arranging step of arranging a magnet on which the covering member can be magnetized on a surface opposite to the bonding surface of the first substrate. Production method. A manufacturing method of the package according to claim 1 or 2,
In the mask body arranging step, the mask body is arranged with a gap between the joint surface of the first substrate and the mesh member. Forming the bonding film on the bonding surface of the first substrate in a package capable of enclosing electronic components in a cavity between the first substrate and the second substrate that are anodically bonded to each other via the bonding film A mask body,
A covering member that covers an opening of the cavity recess formed on the bonding surface of the first substrate;
And a mesh member that supports the covering member.   4. A piezoelectric vibration comprising the steps of implementing the package manufacturing method according to claim 1, and a step of arranging a piezoelectric vibrating piece as the electronic component inside the cavity. Child manufacturing method.   An oscillator, wherein the piezoelectric vibrator manufactured by the method according to claim 5 is electrically connected to an integrated circuit as an oscillator.   6. An electronic device, wherein the piezoelectric vibrator manufactured by the method according to claim 5 is electrically connected to a time measuring unit.   A radio-controlled timepiece, wherein the piezoelectric vibrator manufactured by the method according to claim 5 is electrically connected to a filter portion.

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