JP2011198701A - Film-deposition method and method for manufacturing light-emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film-deposition method capable of uniformly transposing a thin film containing an organic compound on a film-depositing substrate to a transposed range on the film-deposited substrate, and to provide a method for film-depositing an EL layer by transposing a layer containing an organic compound without having any defects and manufacturing the light-emitting element.SOLUTION: In the film-deposition method, a first layer having a surface containing the first organic compound is formed on the film-deposited substrate, a second layer having a surface containing the first organic compound is formed on the film-depositing substrate, and the surface containing the first organic compound of the first layer and the surface containing the first organic compound of the second layer are crimped to each other. Further, it is desirable to transpose the second layer on the first layer of the film-deposited substrate from the film-depositing substrate by mutually separating both the film-deposited substrate and the film-depositing substrate.

Description

The present invention relates to a film formation method used for forming a material that can be formed on a substrate, and a method for manufacturing a light-emitting element using the film formation method.

A light-emitting element that has a light-emitting layer containing a light-emitting organic compound between electrodes is thin and lightweight, can respond to input signals at high speed, and can be driven by a low-voltage direct current. It is attracting attention as a light emitting element.

In addition, there is provided a display device in which a light emitting layer that includes an organic compound and is sandwiched between electrodes has three types of light emitting elements each emitting red (R), green (G), and blue (B) in a matrix. ing. Such a display device can display a full-color image, has excellent contrast and image quality, has a wide viewing angle, and is excellent in visibility.

As a method for arranging light emitting layers containing organic compounds having different emission colors in a matrix, a mask vapor deposition method (Patent Document 1), an ink jet method (Patent Document 2), a laser transfer method, and the like have been proposed.

JP-A-8-227276 Japanese Patent Laid-Open No. 10-12377

However, it is difficult to form a pattern (pattern) spreading in a plane with accurate dimensions using a mask vapor deposition method with a layer containing an organic compound, and light emission containing organic compounds with different emission colors on a large substrate When the layers are arranged in a matrix, there is a problem that the yield is reduced. In addition, the inkjet method has a problem in processing speed, and there is a problem that it takes too much processing time to be applied to a large substrate. Further, the laser transfer method may cause deterioration of the element depending on the intensity of the irradiated laser beam.

Therefore, there is a demand for a technique for producing a pattern (pattern) spreading in a planar shape with a thin film containing an organic compound on a large-sized substrate by a method that does not cause deterioration of element characteristics in a short time with accurate dimensions.

For example, a thin film containing an organic compound formed on the convex part is contacted with the deposition target substrate using a film-forming substrate provided with a convex part substantially the same as the pattern to be deposited on a support having a small dimensional change. Thus, there is a method of transposition (referred to as a contact transposition method in this specification).

However, when an element is manufactured using the contact transfer method, a part of the thin film containing an organic compound on the deposition substrate is not transferred to the transfer region on the deposition substrate, or the transfer region and the thin film are not transferred. There was a problem that a discontinuous interface was formed between the two.

The present invention has been made under such a technical background. Accordingly, it is an object of the present invention to provide a film formation method for uniformly transferring a thin film containing an organic compound on a film formation substrate without causing a defect or a discontinuous interface in a transfer region on the film formation substrate. Is an issue. Another object is to provide a method for manufacturing a light-emitting element by transposing a layer containing an organic compound without causing defects to form an EL layer.

In order to achieve the above object, a first layer having a surface containing a first organic compound is formed on a deposition target substrate, and a second layer having a surface containing the first organic compound is formed on the deposition substrate. The surface of the first layer containing the first organic compound and the surface of the second layer containing the first organic compound are pressure-bonded. Further, the deposition substrate and the deposition substrate may be separated from each other, and the second layer may be transferred from the deposition substrate onto the first layer of the deposition substrate.

Since the surface of the first layer containing the first organic compound and the surface of the second layer containing the first organic compound both contain the first organic compound, they have a high affinity and strongly adhere to each other. And can be transposed without creating a discontinuous interface.

That is, according to one embodiment of the present invention, a film-forming first layer having a surface containing a first organic compound is provided over a deposition target substrate, and the film having a surface containing the first organic compound can be formed. The second layer is provided on the convex portion of the deposition substrate, and the surface of the first layer containing the first organic compound and the surface of the second layer containing the first organic compound are pressure-bonded, In this film formation method, the deposition substrate and the deposition substrate are separated from each other, and the second layer is transferred from the convex portion of the deposition substrate onto the first layer of the deposition substrate.

Further, one embodiment of the present invention has a region having excellent peelability at least at the top of the convex portion, and the adhesive force between the region having excellent releasability and the second layer is the same as that of the first layer. In this film formation method, a film formation substrate having a lower adhesive strength than the film formation substrate is used.

Another embodiment of the present invention is a method for manufacturing a light-emitting element using the above film formation method.

Another embodiment of the present invention is a method for manufacturing the light-emitting element, in which the film-forming layer having a surface containing the first organic compound is a mixed material layer containing an electron-accepting material.

Note that in this specification, an EL layer refers to a layer provided between a pair of electrodes of a light-emitting element. Therefore, a light-emitting layer including an organic compound that is a light-emitting substance and sandwiched between electrodes is one embodiment of an EL layer.

Further, in this specification, when the substance A is dispersed in a matrix made of another substance B, the substance B constituting the matrix is called a host material, and the substance A dispersed in the matrix is called a guest material. To do. Note that the substance A and the substance B may be a single substance or a mixture of two or more kinds of substances.

Note that in this specification, a light-emitting device refers to an image display device, a light-emitting device, or a light source (including a lighting device). In addition, a module in which a connector such as an FPC (Flexible Printed Circuit) or TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package) is attached to the light emitting device, or a printed wiring board provided on the end of the TAB tape or TCP In addition, a module in which an IC (integrated circuit) is directly mounted on a substrate on which a light emitting element is formed by a COG (Chip On Glass) method is also included in the light emitting device.

According to the present invention, the surface of the first layer containing the first organic compound and the surface of the second layer containing the first organic compound both contain the first organic compound and thus have high affinity. Because it adheres strongly, it can be transposed without generating defects or discontinuous interfaces.

Therefore, it is possible to provide a film formation method in which a thin film containing an organic compound on a film formation substrate is uniformly transferred to a transfer region on the film formation substrate. In addition, the first layer of the deposition target substrate and the second layer transferred over the first layer can be satisfactorily bonded to form a continuous layer.

3A and 3B illustrate a deposition target substrate and a deposition substrate according to an embodiment. 4A and 4B illustrate a film formation method according to an embodiment. 4A and 4B illustrate a film formation substrate according to an embodiment. 3A and 3B illustrate a light-emitting element according to an embodiment. 8A to 8D illustrate a method for manufacturing a light-emitting element according to an embodiment. 8A to 8D illustrate a method for manufacturing a light-emitting element according to an embodiment. 10A and 10B illustrate a light-emitting device manufactured using a film formation method according to an embodiment. 10A and 10B illustrate a light-emitting device manufactured using a film formation method according to an embodiment. 10A and 10B illustrate a light-emitting device manufactured using a film formation method according to an embodiment. An electronic device including a light-emitting device manufactured using the film formation method according to any of the embodiments. The laminated film produced using the film-forming method concerning an Example.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
In this embodiment, a deposition method in which a second layer over a deposition substrate is transferred to a first layer over a deposition substrate is described. Note that the first layer is a layer that can be formed and contains a first organic compound on the surface, and the second layer is a layer that can be formed and contains a first organic compound on the surface. Yes.

There is no particular limitation on the structure of the deposition target substrate 150, but a structure with a surface that has high adhesion to a first layer to be formed later and is difficult to peel off is preferable. In the case where the light-emitting element is formed over the deposition target substrate 150, a structure in which the first electrode is provided in advance is preferable. In this embodiment mode, the first layer and the base layer 111 having high adhesive force are provided over the deposition target substrate, and a cross section of the structure is illustrated in FIG. Note that the base layer 111 is not necessarily provided.

An example of the configuration of the deposition target substrate 150 will be described. The deposition target substrate 150 includes a base layer 111 on the first support substrate 100.

The first support substrate 100 is preferably a substrate having a low expansion coefficient. For example, a glass substrate, a quartz substrate, a plastic substrate containing an inorganic material, or the like can be used. The range of the linear expansion coefficient is 1 × 10 ⁻³ / K or less, and the preferable range is 5 × 10 ⁻⁵ / K or less, more preferably 1 × 10 ⁻⁵ / K or less. When the expansion coefficient is suppressed to a low value, the absolute value of the dimensional change of the large substrate is particularly small, and the shift of the film forming position can be reduced.

The base layer 111 is preferably made of a material having a high adhesive force with a first layer to be formed later. As a material having a high adhesive force with the first layer to be formed, a material having a large surface energy can be given as an example. Examples of the material having a large surface energy include metals and metal oxides.

The underlayer 111 can be formed by various methods. For example, the film can be formed by a sputtering method or the like in addition to a vacuum vapor deposition method such as resistance heating vapor deposition or electron beam (EB) vapor deposition. Further, a dispersion liquid containing conductive fine particles may be formed by applying by a spin coating method or an ink jet method, or by applying a sol-gel method or the like. Further, the base layer 111 may be formed as a single layer or a plurality of layers may be stacked.

Next, the structure of the deposition substrate 250 is described with reference to a cross section in FIG. The film formation substrate 250 has at least a convex portion 211, and the convex portion 211 has approximately the same size as a pattern to be deposited on the deposition target substrate.

As with the first support substrate 100, the second support substrate 200 is desirably a substrate having a low expansion coefficient. Although the material which comprises the convex part 211 is not specifically limited, For example, the material containing a metal, a metal oxide, a metal nitride, an organic substance etc. can be used. The height of the convex portion 211 from the second support substrate 200 is preferably thicker than the second layer to be formed later. Specifically, the height of the convex portion 211 is about 300 nm to 3 μm.

Further, the convex portion 211 has, for example, an island shape or a stripe shape. As a method for forming the convex portion, a material that forms the film-shaped convex portion may be etched using a resist mask formed in a photolithography process. Alternatively, a material having photosensitivity may be used.

Specific examples of the material constituting the convex portion 211 include a material containing aluminum, an alloy containing aluminum, titanium, molybdenum, tungsten, silver, gold, copper, or the like. Alternatively, a material containing silicon oxide, silicon nitride, carbon black, graphite, polyimide, or the like may be used.

Next, a first layer is provided over the deposition target substrate 150, a second layer is provided over the deposition target substrate 250, and the second layer is transferred over the first layer over the deposition target substrate 150. A method for forming a film will be described with reference to FIGS.

<First step>
First, the first layer 151 is formed over the deposition target substrate 150. In the case where the deposition target substrate 150 includes the base layer 111, the first layer 151 is formed in contact with the base layer 111.

Although the first layer 151 may be a single layer or a stacked layer, the first organic compound is formed on at least the side of the first layer 151 opposite to the side in contact with the deposition target substrate 150. The layer 151a is included.

As a material that can be used for the first layer 151, a variety of materials can be used regardless of an organic compound or an inorganic compound as long as the material can be transferred from the deposition substrate to the deposition target substrate. For example, in addition to materials containing organic compounds, metals, metal oxides, metal nitrides, or metal halides, mixed materials of metal oxides and organic compounds can be given as examples. Alternatively, a light-emitting material, a carrier transport material, a carrier injection material, or an electrode material which forms an EL layer of a light-emitting element can be used.

In addition, as a material that can be used for the layer 151a containing the first organic compound, any material containing an organic compound may be used. Note that the thickness of the layer 151a containing the first organic compound is preferably 3 nm to 500 nm.

The first layer 151 can be formed by various methods. For example, sputtering methods may be used in addition to vacuum deposition methods such as resistance heating deposition and electron beam (EB) deposition. Further, a spin coating method, a spray coating method, an ink jet method, a dip coating method, a casting method, a die coating method, a roll coating method, a blade coating method, a bar coating method, a gravure coating method, a printing method, or the like may be used. Note that the first layer 151 may be formed by combining a plurality of the above deposition methods. Specifically, the first layer 151 may be formed by stacking another layer by a resistance heating method on a layer formed by a spin coating method.

In the case of using a wet method, a desired vapor deposition material is dissolved or dispersed in a solvent to prepare a solution or dispersion. Any solvent can be used as long as it can dissolve or disperse the material constituting the first layer, does not react with the material constituting the first layer, and does not dissolve the surface forming the first layer. There is no particular limitation.

For example, halogen solvents such as chloroform, tetrachloromethane, dichloromethane, 1,2-dichloroethane, or chlorobenzene, ketone solvents such as acetone, methyl ethyl ketone, diethyl ketone, n-propyl methyl ketone, or cyclohexanone, benzene, toluene, or Aromatic solvents such as xylene, ethyl acetate, n-propyl acetate, n-butyl acetate, ethyl propionate, γ-butyrolactone, ester solvents such as diethyl carbonate, ether solvents such as tetrahydrofuran or dioxane, dimethylformamide Alternatively, an amide solvent such as dimethylacetamide, dimethyl sulfoxide, hexane, water, or the like can be used. Moreover, you may mix and use these solvent multiple types. By using the wet method, the utilization efficiency of the material can be increased and the manufacturing cost can be reduced.

The first layer 151 may be a layer that covers the deposition target substrate 150, or may have an island shape or a stripe shape. Examples of a method for forming the first layer 151 into an island shape or a stripe shape include a shadow mask method and an ink jet method. A cross-sectional view of the deposition target substrate 150 after this step is illustrated in FIG.

<Second step>
Next, the second layer 251 is formed on at least the convex portion 211 of the film formation substrate 250.

The second layer 251 may be a single layer or a stacked layer, but at least a layer containing the first organic compound on the side opposite to the side in contact with the convex portion 211 of the second layer 251. 251a.

The second layer 251 is formed using a material that can be used for the first layer 151. The layer 251a containing the first organic compound is formed using the same material as the layer 151a containing the first organic compound. Note that the second layer 251 can be formed using a method similar to that of the first layer 151. In addition, the thickness of the layer 251a containing the first organic compound is desirably 3 nm to 500 nm.

The second layer 251 may be a layer that covers the deposition substrate 250 or may have an island shape or a stripe shape. In the case where the shape of the second layer 251 is an island shape or a stripe shape, a method similar to the method for forming the first layer 151 on the deposition target substrate 150 in an island shape or a stripe shape may be used. . A cross-sectional view of the structure after this step is shown in FIG.

Note that in this embodiment, the step of forming the first layer 151 on the deposition target substrate 150 is the first step, and the step of forming the second layer on the deposition substrate 250 is the second step. In this order, the order may be changed or may be advanced at the same time. By proceeding with the two steps separately, the process time can be shortened.

<Third step>
Next, the first layer 151 and the second layer 251 are pressed against each other. The layer 151a containing the first organic compound and the layer 251a containing the first organic compound in the first layer 151 are in contact with each other. The first organic compound-containing layer 151a and the second layer 251 including the first organic compound-containing layer 251a both contain the first organic compound and thus have high affinity and are continuously bonded and bonded well by pressure bonding. Form.

In addition, when the first layer 151 and the second layer 251 are heated at the time of pressure bonding, bonding between layers is further improved. As a heating method, for example, heating is performed from the support substrate 100 side of the deposition target substrate 150. The heating temperature is a temperature at which the material included in the first layer 151 does not sublime. Preferably, the heating temperature is higher than the glass transition point of the layer 151a containing the first organic compound and the layer 251a containing the first organic compound.

Note that the first step, the second step, and the third step can be performed in the air, but it is preferable to perform the steps in a reduced-pressure atmosphere. The reduced-pressure atmosphere can be obtained by evacuating the film formation chamber with an evacuation unit so that the degree of vacuum is 5 × 10 ⁻³ Pa or less, preferably about 10 ⁻⁴ Pa to 10 ⁻⁶ Pa. By performing the first step and the second step in a reduced-pressure atmosphere, a phenomenon in which impurities are mixed into the film can be suppressed. Further, by performing the third step in a reduced-pressure atmosphere, there is no risk of gas remaining between the first layer and the second layer, and the bonding between the two becomes good.

A cross section of the structure after the completion of this step is shown in FIG.

<4th process>
Next, the deposition target substrate 150 and the deposition substrate 250 which are in contact with each other through the first layer 151 and the second layer 251 are separated from each other. Incidentally, compared to the deposition target substrate 150 to the adhesive force _{F 1} of the first layer 151, since adhesion _{F 2} of the second layer and the protrusion 211 is weak, the deposition substrate 250 from the deposition substrate 150 When released, the second layer 251 is transferred from the convex portion 211 onto the first layer 151. In addition, the convex part 211 which completed the film-forming process loses the 2nd layer 252, and is exposed. A cross-sectional view of this state is shown in FIG.

According to the film formation method of this embodiment, a method can be provided in which a thin film containing an organic compound on a film formation substrate is uniformly transferred to a transfer region on the film formation substrate. In addition, the first layer of the deposition target substrate and the second layer transferred over the first layer are bonded to each other including the first organic compound formed on each surface. As a result, a layer including the first organic compound is formed as one continuous layer, and the formation of an interface accompanying bonding and the influence of the interface on physical properties are suppressed.

In addition, since the first organic compound-containing layer is formed as one continuous layer, the first layer and the second layer are well bonded to each other. No peeling occurs.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 2)
In this embodiment mode, a deposition substrate is described. The deposition substrate described in this embodiment can be used for a deposition method in which a second layer is transferred over a first layer. Note that the first layer is a layer that can be formed, contains the first organic compound on the surface, and is provided over the deposition target substrate. The second layer is a film-formable layer, includes the first organic compound on the surface, and is provided over the deposition substrate. A cross-sectional view of the film formation substrate of this embodiment is illustrated in FIG.

The film-formation substrate described in this embodiment has a convex portion, and at least the top of the convex portion has a region having excellent peelability, and the second layer in contact with the region is easily peeled off. Have.

Examples of a method for forming a region having excellent peelability include a method in which a separation layer is provided in the region, a method in which the region is formed using a material that is easily peeled, and the like.

As a method for providing the release layer, for example, a non-volatile oil such as a release agent, specifically silicone oil or the like may be applied to the deposition substrate.

In addition, as a material that easily peels, a material having a low surface energy may be selected and used. For example, a material whose surface energy is smaller than that of the layer containing the first organic compound may be selected and used. By making the surface energy of at least the top of the convex portion smaller than that of the layer containing the first organic compound, the first layer formed on the surface of the second layer has a force for bonding the second layer and the top. It becomes weaker than the adhesion force between the layer containing the organic compound and the underlying layer.

Specifically, a layer containing polytetrafluoroethylene or a surface modified with a trifluoromethyl group may be provided on the convex portion of the deposition substrate.

An example of a deposition substrate is described with reference to FIG. The film formation substrate 250A has a convex portion 220A on the second support substrate 200A. The surface of the film-formation substrate 250A including the convex portion 220A is formed using a material having excellent peelability.

As a method for producing the convex portion 220A, a layer having a low surface energy such as polytetrafluoroethylene is formed on the second supporting substrate 200A, and then the layer having a low surface energy is etched using a resist mask to form a convex shape. Good. In addition, after the convex portion is formed on the second support substrate 200A, the convex portion 220A may be formed by imparting peelability to the surface of the convex portion with a surface modifier.

Further, another structure of the deposition substrate is described with reference to FIG. The film formation substrate 250B has a convex portion 220B on the second support substrate 200B. The convex portion 220B is formed using a material having excellent peelability, and the film-forming substrate 250B is formed of a material having higher surface energy than the convex portion 220B and inferior peelability. Therefore, compared to the adhesive force between the second layer and the convex portion 220B, the adhesive force of the surface other than the second layer and the convex portion 220B is increased. By adopting such a configuration, troubles such as the second layer peeling off from the surface other than the convex portion 220B hardly occur.

As a method for manufacturing the convex portion 220B, for example, a layer having a low surface energy may be formed on the second support substrate 200B, and then the layer having a low surface energy may be removed by etching using a resist mask to leave the convex shape. Moreover, after forming a convex part on the 2nd support substrate 200B, peelability may be provided only to the surface of a convex part with a surface modifier, and the convex part 220B may be formed.

Another structure of the deposition substrate is described with reference to FIG. The film formation substrate 250C has a convex portion 220C on the second support substrate 200C. The top 220C_1 of the convex part 220C is formed using a material having a low surface energy and excellent peelability, and the ridge line part 220C_2 of the convex part 220C is formed of a material having a surface energy higher than that of the top 220C_1 and inferior in peelability. Yes.

Since the top portion 220C_1 is excellent in peelability and the surface of the ridgeline portion 220C_2 is inferior in peelability, the second layer formed on the deposition substrate is cleaved between the toptop 220C_1 and the ridgeline portion 220C_2, and has a clear outline. And peel from the vicinity of the top 220C_1.

As a method for producing the convex portion 220C, for example, a layer having a large surface energy is formed in contact with the second support substrate 200C, and a layer having a small surface energy is stacked thereon. Thereafter, the stacked film may be formed into a convex shape by etching using the resist mask. Moreover, after forming a convex part on the 2nd support substrate 200C, peelability may be provided only to the top part of a convex part using a surface modifier.

Alternatively, a layer containing a gas generating substance may be used as a material for forming a region having excellent peelability. The gas generating substance is a substance that decomposes by heat and generates a gas (gas). Examples of the material that can be used for the gas generating layer include trinitrotoluene.

Next, a case where a layer containing a gas generating substance is applied to the top 220C_1 of the convex portion 220C will be described. The apex 220C_1 sandwiched between the convex portion 220C and the second layer and made of a layer containing a gas generating substance is decomposed by heating, and gas is generated between the convex portion 220C and the second layer. As a result, the second layer can be peeled from the convex portion 220C.

Note that the protrusions included in the film formation substrate of this embodiment have approximately the same size as the pattern formed on the film formation substrate. The convex portion may have, for example, an island shape or a stripe shape. The height of the convex portion from the second support substrate is preferably thicker than the second layer to be formed later. Specifically, the height of the convex portion is about 300 nm to 3 μm. Note that, in any of the film formation substrates described above, the second support substrate is desirably a substrate having a low expansion coefficient, like the first support substrate.

The film formation substrate described above can be applied to the film formation method described in Embodiment 1. By using the above-described deposition substrate for the deposition method described in Embodiment Mode 1, the second layer that can be deposited on the surface of the first layer that can be deposited includes the first organic compound. A layer containing the first organic compound can be formed. Note that the first layer is provided on the deposition target substrate and the second layer is provided on the deposition target substrate.

According to the film formation method using the film formation substrate of the present embodiment, a method of forming a film by uniformly transferring a thin film containing an organic compound on the film formation substrate to a transfer region on the film formation substrate Can provide. In addition, the first layer of the deposition target substrate and the second layer transferred over the first layer are bonded to each other including the first organic compound formed on each surface. As a result, a layer including the first organic compound is formed as one continuous layer, and the formation of an interface accompanying bonding and the influence of the interface on physical properties are suppressed.

In addition, since the first organic compound-containing layer is formed as one continuous layer, the first layer and the second layer are well bonded to each other. No peeling occurs.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 3)
In this embodiment, an EL layer is formed by transposing the second layer over the first layer formed over the first electrode, and the second electrode is formed over the EL layer to form a light-emitting element. A method for manufacturing the substrate will be described with reference to FIGS. Note that the description of Embodiment Mode 1 is used for portions that overlap with the film formation method described in Embodiment Mode 1, and differences are described in detail.

A structure of a light-emitting element having an EL layer between a pair of electrodes is described with reference to FIGS.

One embodiment of the light-emitting element illustrated in FIG. 4A includes a first electrode 301, a second electrode 302, and an EL layer 303 over a supporting substrate 300. One of the first electrode 301 and the second electrode 302 functions as an anode, and the other functions as a cathode. Holes injected from the anode and electrons injected from the cathode are recombined in the EL layer 303 to obtain light emission. Note that the EL layer 303 includes at least a light-emitting material.

In one embodiment of the light-emitting element illustrated in FIG. 4B, the EL layer 303 includes a plurality of layers. For example, a hole injection layer 311, a hole transport layer 312, a light emitting layer 313 containing a light emitting material, an electron transport layer 314, and an electron injection layer 315 are sequentially provided from the first electrode 301 side. Note that the EL layer 303 only needs to include at least the light-emitting layer 313, and it is not necessary to provide all the other layers.

4B illustrates the structure in which the first electrode 301 functions as an anode and is provided on the support substrate 300 side, the first electrode 301 functions as a cathode and serves as a support substrate. It is good also as a structure provided in 300 side.

In the light-emitting element illustrated in FIG. 4A or 4B, light emitted from the EL layer 303 is extracted outside through one or both of the first electrode 301 and the second electrode 302. . Therefore, one or both of the first electrode 301 and the second electrode 302 is formed using an electrode that transmits light emitted from the light-emitting layer. In the case where only the first electrode 301 is an electrode that transmits light emitted from the light-emitting layer, the light is extracted from the support substrate 300 side through the first electrode 301. In the case where only the second electrode 302 is an electrode that transmits light emitted from the light-emitting layer, the light is extracted from the opposite side of the support substrate 300 through the second electrode 302. In the case where each of the first electrode 301 and the second electrode 302 is an electrode that transmits light emitted from the light-emitting layer, the light passes through the first electrode 301 and the second electrode 302, and the support substrate 300 side and the support It is taken out from both the substrate 300 and the opposite side.

Next, a method for manufacturing the above light-emitting element using the film formation method described in Embodiment Mode 1 will be described.

In this embodiment, the first layer including part of the EL layer is formed in contact with the first electrode provided over the deposition target substrate. In addition, a second layer including a part of the EL layer continuous with the first layer is formed over the deposition substrate. Note that each of the first layer and the second layer has a surface containing the first organic compound. Next, the surface of the first layer containing the first organic compound and the surface of the second layer containing the first organic compound are in contact with each other, and the second layer is transferred to the first layer to form an EL layer. In which at least a part of the film is formed.

In other words, at least a part of the EL layer constituting the light-emitting element is divided in the thickness direction and formed on the deposition substrate and the deposition substrate, respectively, and then a part of the EL formed on the deposition substrate. In this method, at least a part of the EL layer is formed by transferring a part of the EL layer formed over the deposition substrate on the layer.

Further, when a part of the EL layer formed over the deposition target substrate is the first layer and a part of the EL layer formed over the deposition substrate is the second layer, the first layer and the first layer The second layer is a part of the continuous EL layer, the surface of the second layer contains the same organic compound as the surface of the first layer, and the surface of the second layer is in contact with the surface of the first layer. Thus, the second layer is transferred onto the first layer to form at least a part of the EL layer. Note that a part of the EL layers formed over the deposition target substrate and a part of the EL layers formed over the deposition substrate may be any layer constituting the EL layer divided in the thickness direction. Good.

Note that the EL layer may be a single layer or a structure in which a plurality of layers are stacked. Therefore, the first layer and the second layer may be a single layer or may have a configuration in which a plurality of layers are stacked. In addition, it is not necessary to transfer the second layer over the first layer to complete the EL layer of the light-emitting element, and another layer is formed over the transferred second layer to complete the EL layer. You may do. Note that there is no particular limitation on the deposition method for depositing another layer over the second layer, and a known method may be used or the deposition method of one embodiment of the present invention may be applied.

In addition, the second layer may include a second electrode. In that case, the second layer is transferred over the first layer to form the second electrode. An electrode will also be formed.

A part of the EL layer is formed as a first layer on the deposition substrate side, and a part of the EL layer continuous with the first layer is formed as a second layer on the deposition substrate side. An example of a method for forming an EL layer by transferring the second layer over the layer will be described with reference to FIGS. Note that the light-emitting element illustrated in FIG. 4B can be manufactured by the manufacturing method illustrated in FIG.

FIG. 5A schematically illustrates part of the deposition target substrate 350 over which the first layer 304 is formed and the deposition target substrate 250 over which the second layer 305 is formed.

The deposition target substrate 350 includes the first electrode 301 over the supporting substrate 300. A first layer 304 is formed over the first electrode 301. The first layer 304 is a part of the EL layer 303. Specifically, a part 311a of the hole injection layer is formed. Although the first layer 304 is a single layer in this embodiment mode, a structure in which a plurality of layers are stacked may be employed.

The film formation substrate 250 has a convex portion 211 and a second layer 305 formed on the surface including the convex portion 211. The second layer 305 is a part of the EL layer 303, and includes an electron injection layer 315, an electron transport layer 314, a light emitting layer 313, a hole transport layer 312, and a hole injection layer 311 from the side in contact with the convex portion 211. A portion 311b is stacked.

Next, the deposition target substrate 350 and the deposition substrate 250 face each other, and a part 311a of the hole injection layer 311 and a part 311b of the hole injection layer 311 are pressure-bonded to each other. The substrate 250 is separated and the second layer 305 is transferred over the first layer 304 of the deposition target substrate 350 to form a film. A cross-sectional view at this stage is illustrated in FIG. Portions 311a and 311b of the hole transport layer are bonded to each other by pressure bonding to form a hole injection layer 311. Since part 311a and 311b of the hole transport layer contain the same organic compound, they have a high affinity with each other and are well bonded by pressure bonding to form a continuous layer. Note that at this stage, the first layer 304 and the second layer 305 are joined to form the EL layer 303.

Next, the second electrode 302 is formed over the EL layer 303, so that a light-emitting element in which the EL layer 303 is sandwiched between the first electrode 301 and the second electrode 302 can be formed. A cross-sectional view at this stage is illustrated in FIG.

A deposition substrate supporting substrate 300 applicable to the method for manufacturing the EL element illustrated in FIG. 5, the first electrode 301 over the deposition substrate, the first layer 304 over the first electrode, and the deposition. The second layer 305 and the second electrode 302 over the substrate will be described below with specific examples.

As the supporting substrate 300 which forms the deposition target substrate, a substrate having an insulating surface or an insulating substrate is used. Specifically, various glass substrates, quartz substrates, ceramic substrates, sapphire substrates and the like used for the electronic industry such as aluminosilicate glass, aluminoborosilicate glass, and barium borosilicate glass can be used.

For the first electrode 301 and the second electrode 302, various metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be used. For example, indium tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide, indium zinc oxide (IZO), oxide containing tungsten oxide and zinc oxide. Examples include indium. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium ( Pd), or a nitride of a metal material (for example, titanium nitride).

These materials are usually formed by sputtering. For example, indium oxide-zinc oxide can be formed by a sputtering method using a target in which 1 to 20 wt% of zinc oxide is added to indium oxide. Further, indium oxide containing tungsten oxide and zinc oxide can be formed by a sputtering method using a target containing 0.5 to 5 wt% tungsten oxide and 0.1 to 1 wt% zinc oxide with respect to indium oxide. it can. In addition, a sol-gel method or the like may be applied to produce the ink-jet method or the spin coat method.

Alternatively, aluminum (Al), silver (Ag), an alloy containing aluminum, or the like can be used. In addition, materials having a small work function, elements belonging to Group 1 or Group 2 of the periodic table of elements, that is, alkali metals such as lithium (Li) and cesium (Cs), and magnesium (Mg) and calcium (Ca) , Alkaline earth metals such as strontium (Sr), and alloys containing them (aluminum, alloys of magnesium and silver, alloys of aluminum and lithium), rare earth metals such as europium (Eu), ytterbium (Yb), and the like An alloy containing the same can also be used.

A film of an alkali metal, an alkaline earth metal, or an alloy containing these can be formed using a vacuum evaporation method or a sputtering method. Further, a silver paste or the like can be formed by an inkjet method or the like. In addition, the first electrode 301 and the second electrode 302 are not limited to a single layer film and can be formed using a stacked film.

Note that in order to extract light emitted from the EL layer 303 to the outside of the light-emitting element, one or both of the first electrode 301 and the second electrode 302 are formed so that light can pass therethrough. For example, a conductive material that transmits visible light such as indium tin oxide is used, or silver, aluminum, or the like is formed to have a thickness of several nanometers to several tens of nanometers. Alternatively, a stacked structure of a thin metal film such as silver or aluminum and a thin film using a conductive material having a light-transmitting property with respect to visible light such as an ITO film can be used.

As the hole injection layer 311, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used. In addition, phthalocyanine compounds such as phthalocyanine (abbreviation: H ₂ Pc) and copper phthalocyanine (abbreviation: CuPc), or poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonic acid) (PEDOT / PSS) The hole injection layer can also be formed by a polymer such as the above.

As the hole-injecting layer 311, a layer containing a substance having a high hole-transport property and a substance showing an electron-accepting property can be used. A layer including a substance having a high hole-transport property and a substance having an electron-accepting property has a high carrier density and an excellent hole-injection property. In addition, by using a layer containing a substance having a high hole transporting property and a substance showing an electron accepting property as a hole injection layer in contact with the electrode functioning as the anode, the work function of the electrode material functioning as the anode can be reduced. Regardless, various metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be used.

The layer containing a substance having a high hole-transport property and a substance having an electron-accepting property is formed, for example, by stacking a layer containing a substance having a high hole-transport property and a layer containing a substance having an electron-accepting property. Can do.

As a substance having an electron accepting property used for the hole injection layer 311, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, and the like are used. Can be mentioned. Moreover, a transition metal oxide can be mentioned. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be given. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are preferable because of their high electron accepting properties. Among these, molybdenum oxide is especially preferable because it is stable in the air, has a low hygroscopic property, and is easy to handle.

As the substance having a high hole-transport property used for the hole-injecting layer 311, various compounds such as an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, an oligomer, a dendrimer, and a polymer can be used. Note that the substance having a high hole-transport property used for the hole-injection layer is preferably a substance having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Hereinafter, substances having a high hole-transport property that can be used for the hole-injection layer 311 are specifically listed.

As an aromatic amine compound that can be used for the hole-injecting layer 311, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), N, N ′ -Bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4, 4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB) or the like can be used. N, N′-bis (4-methylphenyl) (p-tolyl) -N, N′-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4′-bis [N- (4-diphenyl) Aminophenyl) -N-phenylamino] biphenyl (abbreviation: DPAB), 4,4′-bis (N- {4- [N ′-(3-methylphenyl) -N′-phenylamino] phenyl} -N— Phenylamino) biphenyl (abbreviation: DNTPD), 1,3,5-tris [N- (4-diphenylaminophenyl) -N-phenylamino] benzene (abbreviation: DPA3B), and the like.

As a carbazole derivative that can be used for the hole-injecting layer 311, specifically, 3- [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA1) ), 3,6-bis [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3- [N- (1-naphthyl) -N- (9-phenylcarbazol-3-yl) amino] -9-phenylcarbazole (abbreviation: PCzPCN1), 4,4′-di (N-carbazolyl) biphenyl (abbreviation: CBP), 1,3,5-tris [4 -(N-carbazolyl) phenyl] benzene (abbreviation: TCPB), 9- [4- (N-carbazolyl) phenyl] -10-phenylanthrace (Abbreviation: CzPA), and 1,4-bis [4-(N-carbazolyl) phenyl] -2,3,5,6-tetraphenylbenzene.

Examples of aromatic hydrocarbons that can be used for the hole injection layer 311 include 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 2-tert- Butyl-9,10-di (1-naphthyl) anthracene, 9,10-bis (3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis (4-phenylphenyl) ) Anthracene (abbreviation: t-BuDBA), 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-) BuAnth), 9,10-bis (4-methyl-1-naphthyl) anthracene (abbreviation: DMNA), 9,10-bis [2 (1-naphthyl) phenyl] -2-tert-butyl-anthracene, 9,10-bis [2- (1-naphthyl) phenyl] anthracene, 2,3,6,7-tetramethyl-9,10-di ( 1-naphthyl) anthracene, 2,3,6,7-tetramethyl-9,10-di (2-naphthyl) anthracene, 9,9′-bianthryl, 10,10′-diphenyl-9,9′-bianthryl, 10,10′-bis (2-phenylphenyl) -9,9′-bianthryl, 10,10′-bis [(2,3,4,5,6-pentaphenyl) phenyl] -9,9′-bianthryl , Anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra (tert-butyl) perylene, and the like. In addition, pentacene, coronene, and the like can also be used. Thus, it is more preferable to use an aromatic hydrocarbon having a hole mobility of 1 × 10 ⁻⁶ cm ² / Vs or more and having 14 to 42 carbon atoms.

Note that the aromatic hydrocarbon that can be used for the hole injection layer 311 may have a vinyl skeleton. As the aromatic hydrocarbon having a vinyl group, for example, 4,4′-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), 9,10-bis [4- (2,2- Diphenylvinyl) phenyl] anthracene (abbreviation: DPVPA) and the like.

In addition, a layer including a substance having a high hole-transport property and a substance having an electron-accepting property has not only a hole-injection property but also a hole-transport property. It may be used as a transport layer.

The hole transport layer 312 is a layer containing a substance having a high hole transport property, and examples of the substance having a high hole transport property include 4,4′-bis [N- (1-naphthyl) -N. -Phenylamino] biphenyl (abbreviation: NPB or α-NPD) and N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (Abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methyl Phenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: Use aromatic amine compounds such as BSPB) It can be. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Note that the layer containing a substance having a high hole-transport property is not limited to a single layer, and two or more layers containing the above substances may be stacked.

The light-emitting layer 313 includes a light-emitting substance, and a phosphorescent light-emitting compound and a fluorescent compound can be used as the light-emitting substance. As the light-emitting substance, the following phosphorescent compounds can be used. Bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) tetrakis (1-pyrazolyl) borate (abbreviation: FIr6), bis [2- (4 ′, 6′- Difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) picolinate (abbreviation: FIrpic), bis [2- (3 ′, 5′-bistrifluoromethylphenyl) pyridinato-N, C ^{2 ′} ] iridium (III) Picolinate (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) acetylacetonate (abbreviation: FIracac) , tris (2-phenylpyridinato) iridium (III) (abbreviation: Ir _(ppy) 3), bis (2-phenylpyridinato-) Ili Um (III) acetylacetonate _{(abbreviation: Ir (ppy) 2 (acac} )), bis (benzo [h] quinolinato) iridium (III) acetylacetonate _{(abbreviation: Ir (bzq) 2 (acac} )), bis ( 2,4-diphenyl-1,3-oxazolate-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (dpo) ₂ (acac)), bis [2- (4′-perfluorophenylphenyl) ) Pyridinato] iridium (III) acetylacetonate (abbreviation: Ir (p-PF-ph) ₂ (acac)), bis (2-phenylbenzothiazolate-N, C ^{2 ′} ) iridium (III) acetylacetonate _{(abbreviation: Ir (bt) 2 (acac} )), bis [2- (2'-benzo [4, 5-alpha] thienyl) pyridinato -N, ^{3 ']} iridium (III) acetylacetonate _{(abbreviation: Ir (btp) 2 (acac} )), bis (1-phenylisoquinolinato--N, C ^2') iridium (III) acetylacetonate (abbreviation: Ir ( piq) ₂ (acac)), (acetylacetonato) bis [2,3-bis (4-fluorophenyl) quinoxalinato] iridium (III) (abbreviation: Ir (Fdpq) ₂ (acac)), (acetylacetonate) Bis (2,3,5-triphenylpyrazinato) iridium (III) (abbreviation: Ir (tppr) ₂ (acac)), 2,3,7,8,12,13,17,18-octaethyl-21H , 23H-porphyrin platinum (II) (abbreviation: PtOEP), tris (acetylacetonate) (monophenanthroline) terbi Um (III) (abbreviation: Tb (acac) ₃ (Phen)), Tris (1,3-diphenyl-1,3-propanedionate) (monophenanthroline) Europium (III) (abbreviation: Eu (DBM) ₃ ( Phen)), tris [1- (2-thenoyl) -3,3,3-trifluoroacetonato] (monophenanthroline) europium (III) (abbreviation: Eu (TTA) ₃ (Phen)) and the like.

Further, as the luminescent substance, the following fluorescent compounds can be used. For example, N, N′-bis [4- (9H-carbazol-9-yl) phenyl] -N, N′-diphenylstilbene-4,4′-diamine (abbreviation: YGA2S), 4- (9H-carbazole- 9-yl) -4 '-(10-phenyl-9-anthryl) triphenylamine (abbreviation: YGAPA), 4- (9H-carbazol-9-yl) -4'-(9,10-diphenyl-2- Anthryl) triphenylamine (abbreviation: 2YGAPPA), N, 9-diphenyl-N- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2 , 5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4- (10-phenyl-9-anthryl) -4 '-(9-phenyl-9H-ca Basol-3-yl) triphenylamine (abbreviation: PCBAPA), N, N ″-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene) bis [N, N ′, N ′ -Triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA), N, 9-diphenyl-N- [4- (9,10-diphenyl-2-anthryl) phenyl] -9H-carbazol-3-amine ( Abbreviation: 2PCAPPA), N- [4- (9,10-diphenyl-2-anthryl) phenyl] -N, N ′, N′-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N, N , N ′, N ′, N ″, N ″, N ′ ″, N ′ ″-octaphenyldibenzo [g, p] chrysene-2,7,10,15-tetraamine (abbreviation: DBC) ), Coumarin 30,9,10-diphenyl-2- [N-phenyl-N- (9-phenyl-9H-carbazol-3-yl) amino] anthracene (abbreviation: 2PCAPA), N- [9,10-bis (1,1′-biphenyl-2-yl) -2-anthryl] -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N- (9,10-diphenyl-2-anthryl) -N, N ', N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N- [9,10-bis (1,1'-biphenyl-2-yl) -2-anthryl]- N, N ′, N′-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis (1,1′-biphenyl-2-yl) -N- [4- (9H-carbazo -9-yl) phenyl] -N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N, N, 9-triphenylanthracen-9-amine (abbreviation: DPhAPhA) coumarin 545T, N, N'- Diphenylquinacridone, (abbreviation: DPQd), rubrene, 5,12-bis (1,1′-biphenyl-4-yl) -6,11-diphenyltetracene (abbreviation: BPT), 2- (2- {2- [ 4- (dimethylamino) phenyl] ethenyl} -6-methyl-4H-pyran-4-ylidene) propanedinitrile (abbreviation: DCM1), 2- {2-methyl-6- [2- (2,3,6) , 7-Tetrahydro-1H, 5H-benzo [ij] quinolizin-9-yl) ethenyl] -4H-pyran-4-ylidene} propanedinitrile (abbreviation: DCM2 N, N, N ′, N′-tetrakis (4-methylphenyl) tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N, N, N ′, N′-tetrakis (4-Methylphenyl) acenaphtho [1,2-a] fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2- {2-isopropyl-6- [2- (1,1,7,7- Tetramethyl-2,3,6,7-tetrahydro-1H, 5H-benzo [ij] quinolizin-9-yl) ethenyl] -4H-pyran-4-ylidene} propanedinitrile (abbreviation: DCJTI), 2- { 2-tert-butyl-6- [2- (1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H, 5H-benzo [ij] quinolizin-9-yl) ethenyl]- 4H-Pyra -4-ylidene} propanedinitrile (abbreviation: DCJTB), 2- (2,6-bis {2- [4- (dimethylamino) phenyl] ethenyl} -4H-pyran-4-ylidene) propanedinitrile (abbreviation) : BisDCM), 2- {2,6-bis [2- (8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H, 5H-benzo [ij] quinolidine -9-yl) ethenyl] -4H-pyran-4-ylidene} propanedinitrile (abbreviation: BisDCJTM).

As the organic compound that disperses the light-emitting substance, when the light-emitting substance is a fluorescent compound, a substance having a singlet excitation energy (energy difference between the ground state and the singlet excited state) larger than that of the fluorescent compound is used. preferable. In the case where the light-emitting substance is a phosphorescent compound, a substance having a triplet excitation energy (energy difference between a ground state and a triplet excited state) larger than that of the phosphorescent compound is preferably used.

The light-emitting layer 313 can be a layer formed by dispersing a light-emitting substance in an organic compound. Examples of the organic compound in which the light-emitting substance is dispersed include tris (8-quinolinolato) aluminum (III) (abbreviation: Alq), tris (4-methyl-8-quinolinolato) aluminum (III) (abbreviation: Almq ₃ ), bis ( 10-hydroxybenzo [h] quinolinato) beryllium (II) (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (III) (abbreviation: BAlq), bis (8 -Quinolinolato) zinc (II) (abbreviation: Znq), bis [2- (2-benzoxazolyl) phenolato] zinc (II) (abbreviation: ZnPBO), bis [2- (2-benzothiazolyl) phenolato] zinc ( II) Metal complexes such as (abbreviation: ZnBTZ), 2- (4-biphenylyl) -5- (4-tert-butyl) Phenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (p-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (Abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- (4-tert-butylphenyl) -1,2,4-triazole (abbreviation: TAZ), 2,2 ′, 2 ''-(1,3,5-benzenetriyl) tris (1-phenyl-1H-benzimidazole) (abbreviation: TPBI), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), 9- [4 Heterocyclic compounds such as-(5-phenyl-1,3,4-oxadiazol-2-yl) phenyl] -9H-carbazole (abbreviation: CO11), 4,4'-bis [N- (1-naphthyl) ) -N-F Nenylamino] biphenyl (NPB), N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD), 4, An aromatic amine compound such as 4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB) can be given. In addition, condensed polycyclic aromatic compounds such as anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, and dibenzo [g, p] chrysene derivatives can be given. Specifically, 9,10-diphenylanthracene (abbreviation: DPAnth) N, N-diphenyl-9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazol-3-amine (abbreviation: CzA1PA), 4- (10-phenyl-9-anthryl) triphenyl Amine (abbreviation: DPhPA), 4- (9H-carbazol-9-yl) -4 ′-(10-phenyl-9-anthryl) triphenylamine (abbreviation: YGAPA), N, 9-diphenyl-N- [4 -(10-phenyl-9-anthryl) phenyl] -9H-carbazol-3-amine (abbreviation: PCAPA), N, 9-diphenyl-N- {4- [4- (10-phenyl-9-anthryl) phenyl] phenyl} -9H-carbazol-3-amine (abbreviation: PCAPBA), 9,10-diphenyl-2- [ N-phenyl-N- (9-phenyl-9H-carbazol-3-yl) amino] anthracene (abbreviation: 2PCAPA), 6,12-dimethoxy-5,11-diphenylchrysene, N, N, N ′, N ′ , N ″, N ″, N ′ ″, N ′ ″-octaphenyldibenzo [g, p] chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), 9- [4- ( N-carbazolyl) phenyl] -10-phenylanthracene (abbreviation: CzPA), 3,6-diphenyl-9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: DPCz) A), 9,10-bis (3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 2-tert-butyl-9,10- Di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 9,9′-bianthryl (abbreviation: BANT), 9,9 ′-(stilbene-3,3′-diyl) diphenanthrene (abbreviation: DPNS), 9,9 ′-(stilbene-4,4′-diyl) diphenanthrene (abbreviation: DPNS2), 3,3 ′, 3 ″-(benzene-1,3,5-triyl) tripylene (abbreviation: TPB3), etc. Can be mentioned.

Note that as the film formation material included in the light-emitting layer 313, two or more kinds of organic compounds in which a light-emitting substance is dispersed may be used, or two or more kinds of light-emitting substances dispersed in an organic compound may be used. Further, an organic compound in which two or more kinds of luminescent substances are dispersed and two or more kinds of luminescent substances may be used.

The electron transport layer 314 includes a substance having a high electron transport property. For example, tris (8-quinolinolato) aluminum (abbreviation: Alq), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ). Bis (10-hydroxybenzo [h] quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (abbreviation: BAlq), quinoline skeleton or benzoquinoline A metal complex having a skeleton can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ)) A metal complex having an oxazole-based or thiazole-based ligand such as ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5 -(P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- (4- tert-Butylphenyl) -1,2,4-triazole (abbreviation: TAZ01) bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can also be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than the above substances, any substance that has a property of transporting more electrons than holes may be used for the electron-transport layer. Further, the electron-transport layer is not limited to a single layer, and two or more layers including the above substances may be stacked.

As the electron injection layer 315, an alkali metal compound such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ), or the like, or an alkaline earth metal compound can be used. Further, a layer in which a substance having an electron transporting property and an alkali metal or an alkaline earth metal are combined can also be used. For example, Alq containing magnesium (Mg) can be used. Note that it is more preferable to use a layer in which an electron transporting substance is combined with an alkali metal or an alkaline earth metal as the electron injection layer because electron injection from the second electrode 302 occurs efficiently.

Note that examples of a method for forming each layer included in the EL layer 303 over a deposition substrate or a deposition target substrate include a vacuum deposition method, an electron beam deposition method, and a sputtering method. Examples of the wet method include an inkjet method and a spin coat method. Further, the film formation method described in Embodiment Mode 1 may be applied, or a different film formation method may be used for each electrode or each layer. Moreover, you may combine with the other film-forming method.

In the light-emitting element manufactured through the above steps, the first layer of the deposition target substrate and the second layer transferred over the first layer are connected via the continuous layer containing the first organic compound. Bonded well. Since the first layer and the second layer are joined via the continuous layer including the first organic compound, carriers flowing in the light-emitting element are not inhibited. As a result, a favorable light emitting element can be provided.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 4)
In this embodiment mode, a method for forming a plurality of light-emitting elements having different types by transferring a plurality of second layers having different types onto the first layer over the same substrate will be described. The first layer is a part of the EL layer provided over the first electrode of the deposition target substrate, and the second layer is one of EL layers that are continuous with the first layer and have different types. Part.

In this embodiment mode, three types of light emitting elements are manufactured on the same substrate, and the first electrode and the second electrode of the three types of light emitting elements are optimized as shown in FIG. A case where the microresonators (also referred to as microcavities) are arranged at a distance will be described. The light-emitting element in which the first electrode and the second electrode form a microresonator has a narrow spectrum width and exhibits a bright emission color.

A semi-reflective and semi-transmissive electrode is used for the first electrode (301R, 301G, and 301B) on the deposition target substrate 350, and a reflective electrode is used for the second electrode. In addition, the distance between the first electrode and the second electrode, that is, the thickness of the EL layer is adjusted in accordance with the emission wavelength emitted from the EL layer. For example, the EL layer of the green light emitting element is made thicker than the EL layer of the blue light emitting element, and the EL layer of the red light emitting element is made thicker than the EL layer of the green light emitting element.

The film formation method exemplified in this embodiment can easily form EL layers having different thicknesses over the same substrate, and is suitable as a method for manufacturing a microresonator structure. Specifically, the first layer is formed on the deposition target substrate with a certain thickness, and the second layer having a different thickness for each luminescent color is formed separately on the plurality of deposition substrates. EL layers having different thicknesses can be formed over the deposition target substrate by transferring a plurality of second layers over the first layer of the first deposition target substrate using the substrate. .

Note that changing the thickness of the EL layer to produce a microresonator structure often affects the driving voltage of the light-emitting element. Therefore, it is preferable to select a layer that hardly affects the driving voltage and change the thickness of the entire EL layer by changing its thickness. In particular, a hole injection layer including an organic compound and an electron-accepting material has a property that does not easily affect the driving voltage even when the thickness is changed, and thus is suitable as a layer for adjusting the thickness of the EL layer.

The structures of the deposition target substrate 350 and the deposition substrates (250R, 250G, and 250B) used in this embodiment are illustrated in FIG. Note that, for convenience of explanation, three different deposition substrates (250R, 250G, and 250B) are arranged adjacent to each other in FIG. 6A, but in actuality, any one of the three deposition substrates is shown. One is deposited against the deposition substrate.

A second layer 305R for forming an EL layer that emits red (R) light is formed on the deposition substrate 250R, and an EL layer that emits green (G) light is formed on the deposition substrate 250G. Each of the second layers 305G is provided with a second layer 305B that forms an EL layer that emits blue (B) light.

Next, detailed configurations of the deposition target substrate 350, the first deposition substrate 250R, the second deposition substrate 250G, and the third deposition substrate 250B will be described.

The structure of the deposition target substrate 350 includes a plurality of first electrodes (301R, 301G, and 301B) and a partition wall 320 that covers an end portion of each first electrode over the first supporting substrate 300. The first layer 304 having the same thickness covers the first electrodes (301R, 301G, and 301B).

The first electrode is formed in, for example, an island shape or a stripe shape, and an end portion is covered with a partition 320. Note that as the first electrode, for example, the electrode material exemplified in Embodiment 3 can be used. The thickness of the first electrode 301 is preferably about 1 to 500 nm.

The partition 320 is made of an insulating material. The partition 320 that covers the end portion of the first electrode layer prevents a short circuit between the end portion of the first electrode and the second electrode. Note that the light-emitting element emits light in a portion overlapping with a region of the first electrode that does not overlap with the partition 320.

The first layer 304 is formed over the deposition target substrate 350. In the first layer 304 of this embodiment, the hole injection layer 311 is divided into two in the thickness direction as in the third embodiment. Note that as the first layer 304, for example, a layer containing a substance having a high hole-transport property and a substance showing an electron-accepting property can be used.

The first film-formation substrate 250R, the second film-formation substrate 250G, and the third film-formation substrate 250B have the same configuration except that the arrangement of the convex portions may be different.

The structure of the film-formation substrate 250R has a convex portion on the second support substrate 200R. The convex portion has a top portion 211a on the ridge line portion 211b. The top portion 211a is formed using a material having a surface energy lower than that of the ridge line portion 211b. Therefore, the second layer 305R formed on the film formation substrate 250R is easily peeled off from the top 211a.

The surface of the top 211a facing the deposition target substrate is smaller than or substantially the same size as the region of the first electrode that is not covered by the partition 320 of the deposition target substrate 350. If the size of the top portion 211a is too large, the first layer 304 and the second layer 305R on the top portion 211a cannot be in close contact with each other and do not bond well.

The second layer 305R is formed over the film formation substrate 250R. As in Embodiment 3, the second layer 305R exemplified in this embodiment includes an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a hole injection layer from the deposition substrate 250R side. Part 311b is laminated. A part 311b of the hole injection layer is the other of the hole injection layer 311 divided into two in the thickness direction, and contains the same organic compound as the first layer 304, and is formed on the first layer 304 of the deposition target substrate. It is the surface of the 2nd layer 305R which touches. The second layer 305R includes a light-emitting layer that emits red light.

The thickness of the second layer 305R is optimized so that the first electrode and the second electrode together with the first layer 304 form a microresonator. Specifically, the hole injection layer It is adjusted using the thickness of the part 311b_R of. In particular, a hole injecting layer including a mixed material layer including an organic compound and an electron-accepting material is preferable because the influence on the driving voltage of the light-emitting element is small even when the thickness is changed.

Note that the thickness of the second layer 305G is adjusted using the thickness of the part 311b_G of the hole injection layer, and the thickness of the third layer 305B is adjusted using the thickness of the part 311b_B of the hole injection layer. Yes. The second layer 305R is formed on the film formation substrate 250R, the second layer 305G is formed on the film formation substrate 250G, and the second layer 305B is formed separately on the film formation substrate 250B. Can be formed. The second layer 305G includes a light emitting layer that emits green light, and the second layer 305B includes a light emitting layer that emits blue light.

Next, the second layer 305R is transferred using the first film formation substrate 250R over the first layer 304, and the second layer 305G is transferred using the second film formation substrate 250G. A method for forming the three types of EL layers by transposing the second layer 305B using the third deposition substrate 250B will be described focusing on the case where the second layer 305R is formed.

In the step of transferring the second layer 305R, alignment is performed so that the convex portion of the deposition substrate 250R overlaps the first electrode 301R of the deposition target substrate 350. For alignment, for example, alignment markers may be provided on the deposition target substrate 350 and the deposition substrate 250R, respectively, and alignment may be performed using the markers.

Next, the deposition target substrate 350 and the deposition substrate 250R are pressure-bonded, and the first layer 304 over the first electrode 301R and the second layer 305R formed in contact with the top 211a of the convex portion are joined. . Since the surfaces where the first layer 304 and the second layer 305R are in contact with each other are hole transport layers containing the same organic compound, the affinity is high. As a result, one continuous hole transport layer is formed, and the formation of the interface accompanying the bonding and the influence of the interface on the physical properties are suppressed. A cross-sectional view of this state is shown in FIG.

Next, the deposition target substrate 350 and the deposition substrate 250R which are in contact with each other through the first layer 304 and the second layer 305 are separated. Since the adhesive force between the top 211a of the deposition substrate 250R and the second layer 305R is weak, the second layer 305R is peeled off from the top 211a and transferred onto the first layer 304. Part of the EL layer that emits red light is formed through the above steps. A cross-sectional view of this state is shown in FIG.

In the step of transferring the second layer 305G, the first layer 304 over the first electrode 301G of the deposition target substrate 350 and the second layer 305G formed in contact with the top of the convex portion are transferred. Form a film. In the step of transferring the second layer 305B, the first layer 304 on the first electrode 301B of the deposition target substrate 350 and the second layer 305B formed in contact with the top of the convex portion are transferred. To form a film.

Through the above steps, the EL layer 303R that emits red light, the EL layer 303G that emits green light, and the EL layer 303B that emits blue light can be formed over the same deposition target substrate 350.

Next, the second electrode 302 is formed using a vacuum evaporation method or the like in contact with the EL layers (303R, 303G, and 303B) formed over the first electrode of the deposition target substrate 350. Through the above steps, a light-emitting element in which an EL layer (303R, 303G, or 303B) is sandwiched between the first electrode 301 and the second electrode 302 can be manufactured. A cross-sectional view of this state is shown in FIG.

In the light-emitting element manufactured through the above steps, the first layer of the deposition target substrate and the second layer transferred over the first layer are connected via the continuous layer containing the first organic compound. Bonded well. Since the first layer and the second layer are joined via the continuous layer including the first organic compound, carriers flowing in the light-emitting element are not inhibited. As a result, a favorable light emitting element can be provided.

Further, according to the method for manufacturing the light-emitting element exemplified in this embodiment, a light-emitting element having EL layers having different thicknesses can be easily formed over the same substrate.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 5)
In this embodiment, a light-emitting device formed using the light-emitting element described in Embodiment 4 will be described.

First, a passive matrix light-emitting device will be described with reference to FIGS.

A light emitting device of a passive matrix type (also referred to as a simple matrix type) is provided so that a plurality of anodes arranged in stripes (bands) and a plurality of cathodes arranged in stripes are orthogonal to each other. The light emitting layer is sandwiched between the intersections. Therefore, the pixel corresponding to the intersection between the selected anode (to which voltage is applied) and the selected cathode is turned on.

7A is a diagram illustrating a top view of the pixel portion before sealing, and a cross-sectional view taken along the chain line AA ′ in FIG. 7A is FIG. FIG. 7C is a cross-sectional view taken along −B ′.

An insulating layer 1104 is formed over the substrate 1101 as a base insulating layer. Note that the base insulating layer is not particularly required if it is not necessary. On the insulating layer 1104, a plurality of first electrodes 1113 are arranged in stripes at equal intervals. A partition 1114 having an opening corresponding to each pixel is provided over the first electrode 1113, and the partition 1114 having an opening is formed using an insulating material (photosensitive or non-photosensitive organic material (polyimide, acrylic, Polyamide, polyimide amide, resist or benzocyclobutene), or SOG film (for example, an SiOx film containing an alkyl group)). Note that an opening corresponding to each pixel is a light emitting region 1121.

A plurality of reverse-tapered partition walls 1122 that are parallel to each other and intersect with the first electrode 1113 are provided over the partition wall 1114 having an opening. The inversely tapered partition 1122 is formed by using a positive photosensitive resin in which an unexposed portion remains and adjusting the exposure amount or the development time so that the lower part of the pattern is etched more in accordance with the photolithography method.

The total height of the partition wall 1114 having an opening and the reverse-tapered partition wall 1122 is set to be larger than the film thickness of the EL layer and the second electrode 1116. Thus, an EL layer separated into a plurality of regions, specifically, an EL layer (R) (1115R) formed of a material emitting red light, and an EL layer (G) (G) (formed of a material emitting green light) ( 1115G), an EL layer (B) (1115B) formed of a material that emits blue light, and a second electrode 1116 are formed. Note that the plurality of regions separated from each other are electrically independent.

The second electrode 1116 is a striped electrode parallel to each other and extending in a direction intersecting the first electrode 1113. Note that a part of the conductive layer for forming the EL layer and the second electrode 1116 is also formed over the reverse-tapered partition 1122; however, the EL layer (R) (1115R) and the EL layer (G) (1115G) The EL layer (B) (1115B) and the second electrode 1116 are separated. Note that the EL layer in this embodiment includes at least a light-emitting layer, and may include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, or the like in addition to the light-emitting layer. Good.

Here, an EL layer (R) (1115R), an EL layer (G) (1115G), and an EL layer (B) (1115B) are selectively formed, and three types (red (R), blue (G), green) An example of forming a light emitting device capable of full color display capable of obtaining the light emission of (B)) is shown. Note that the EL layers (R) (1115R), the EL layers (G) (1115G), and the EL layers (B) (1115B) are formed in stripe patterns parallel to each other. In order to form these EL layers, the film formation method described in any of Embodiments 1 and 2 may be applied.

If necessary, sealing is performed using a sealing material such as a sealing can or a glass substrate for sealing. Here, a glass substrate is used as the sealing substrate, and the substrate and the sealing substrate are bonded together using an adhesive such as a sealing material, and the space surrounded by the adhesive such as the sealing material is hermetically sealed. The sealed space is filled with a filler or a dry inert gas. In order to improve the reliability of the light emitting device, a desiccant or the like may be enclosed between the substrate and the sealing material. A very small amount of water is removed by the desiccant, and it is sufficiently dried. In addition, as the desiccant, a substance that absorbs moisture by chemical adsorption, such as an oxide of an alkaline earth metal such as calcium oxide or barium oxide, can be used. In addition, you may use the substance which adsorb | sucks moisture by physical adsorption, such as a zeolite and a silica gel, as another drying material.

However, in the case where a sealing material that covers and contacts the light emitting element is provided and is sufficiently shielded from the outside air, the drying material is not necessarily provided.

Next, FIG. 8 shows a top view when an FPC or the like is mounted on the passive matrix light-emitting device shown in FIG.

In FIG. 8, the pixel portions constituting the image display intersect so that the scanning line group and the data line group are orthogonal to each other.

Here, the first electrode 1113 in FIG. 7 corresponds to the scanning line 1203 in FIG. 8, the second electrode 1116 in FIG. 7 corresponds to the data line 1202 in FIG. This corresponds to the partition wall 1204. An EL layer is sandwiched between the data line 1202 and the scanning line 1203, and an intersection indicated by a region 1205 corresponds to one pixel.

Note that the scanning line 1203 is electrically connected to the connection wiring 1208 at the wiring end, and the connection wiring 1208 is connected to the FPC 1209 b through the input terminal 1207. The data line is connected to the FPC 1209a through the input terminal 1206.

Further, if necessary, an optical film such as a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate), a retardation plate (λ / 4 plate, λ / 2 plate), a color filter, etc. is appropriately provided on the exit surface. Also good. Further, an antireflection film may be provided on the polarizing plate or the circularly polarizing plate. For example, anti-glare treatment can be performed that diffuses reflected light due to surface irregularities and reduces reflection.

Note that FIG. 8 illustrates an example in which the driver circuit is not provided over the substrate; however, there is no particular limitation, and an IC chip having the driver circuit may be mounted over the substrate.

When an IC chip is mounted, a data line side IC and a scanning line side IC in which a driving circuit for transmitting each signal to the pixel portion is formed in a peripheral (outside) region of the pixel portion by a COG method. . You may mount using TCP and a wire bonding system as mounting techniques other than a COG system. TCP is an IC mounted on a TAB tape, and the IC is mounted by connecting the TAB tape to a wiring on an element formation substrate. The data line side IC and the scanning line side IC may be those using a silicon substrate, or may be a glass substrate, a quartz substrate, or a plastic substrate formed with a drive circuit using TFTs. Further, although an example in which one IC is provided on one side has been described, it may be divided into a plurality of parts on one side.

Next, an example of an active matrix light-emitting device is described with reference to FIGS. 9A is a top view illustrating the light-emitting device, and FIG. 9B is a cross-sectional view taken along the chain line A-A ′ in FIG. 9A. An active matrix light-emitting device according to this embodiment includes a pixel portion 1302 provided over an element substrate 1310, a driver circuit portion 1301 (source side driver circuit), a driver circuit portion 1303 (gate side driver circuit), and the like. Have. The pixel portion 1302, the driver circuit portion 1301, and the driver circuit portion 1303 are sealed between the element substrate 1310 and the sealing substrate 1304 with a sealant 1305.

Further, on the element substrate 1310, an external input terminal that transmits a signal (eg, a video signal, a clock signal, a start signal, or a reset signal) and a potential from the outside to the driver circuit portion 1301 and the driver circuit portion 1303 is provided. A lead wiring 1308 for connection is provided. Here, an example is shown in which an FPC 1309 (flexible printed circuit) is provided as an external input terminal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.

Next, a cross-sectional structure is described with reference to FIG. A driver circuit portion and a pixel portion are formed over the element substrate 1310. Here, a driver circuit portion 1301 which is a source side driver circuit and a pixel portion 1302 are shown.

The driver circuit portion 1301 shows an example in which a CMOS circuit in which an n-channel TFT 1323 and a p-channel TFT 1324 are combined is formed. Note that the circuit forming the driver circuit portion may be formed of various CMOS circuits, PMOS circuits, or NMOS circuits. In this embodiment mode, a driver integrated type in which a driver circuit is formed over a substrate is shown; however, this is not necessarily required, and the driver circuit can be formed outside the substrate.

The pixel portion 1302 is formed by a plurality of pixels including a switching TFT 1311 and a first electrode 1313 electrically connected to a wiring (source electrode or drain electrode) of the current control TFT 1312 and the current control TFT 1312. The Note that an insulator 1314 is formed so as to cover an end portion of the first electrode 1313. Here, it is formed by using a positive photosensitive acrylic resin.

In order to improve the coverage of a film formed as an upper layer, it is preferable that a curved surface having a curvature be formed on the upper end portion or the lower end portion of the insulator 1314. For example, in the case where a positive photosensitive acrylic resin is used as a material for the insulator 1314, it is preferable that the upper end portion of the insulator 1314 has a curved surface having a curvature radius (0.2 μm to 3 μm). As the insulator 1314, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used. For example, both silicon oxide and silicon oxynitride can be used.

An EL layer 1300 and a second electrode 1316 are stacked over the first electrode 1313. Note that the first electrode 1313 is an ITO film, and the wiring of the current control TFT 1312 connected to the first electrode 1313 is a laminated film of a titanium nitride film and a film containing aluminum as a main component, or a titanium nitride film and aluminum. When a laminated film including a main component film and a titanium nitride film is applied, the resistance as a wiring is low and good ohmic contact with the ITO film can be obtained. Note that although not shown here, the second electrode 1316 is electrically connected to an FPC 1309 which is an external input terminal.

The EL layer 1300 is provided with at least a light-emitting layer, and includes a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer as appropriate in addition to the light-emitting layer. A light-emitting element 1315 is formed with a stacked structure of the first electrode 1313, the EL layer 1300, and the second electrode 1316.

In the cross-sectional view in FIG. 9B, only one light-emitting element 1315 is illustrated; however, in the pixel portion 1302, a plurality of light-emitting elements are arranged in a matrix. In the pixel portion 1302, light emitting elements capable of emitting three types of light (R, G, and B) can be selectively formed, so that a light emitting device capable of full color display can be formed. Alternatively, a light emitting device capable of full color display may be obtained by combining with a color filter.

Further, the sealing substrate 1304 is attached to the element substrate 1310 with the sealant 1305, whereby the light-emitting element 1315 is provided in the space 1307 surrounded by the element substrate 1310, the sealing substrate 1304, and the sealant 1305. Yes. Note that the space 1307 includes a structure filled with a sealant 1305 in addition to a case where the space is filled with an inert gas (nitrogen, argon, or the like).

Note that an epoxy-based resin is preferably used for the sealant 1305. Moreover, it is desirable that these materials are materials that do not transmit moisture and oxygen as much as possible. In addition to a glass substrate or a quartz substrate, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like can be used as a material for the sealing substrate 1304.

As described above, a light-emitting device can be obtained by applying the above embodiment. An active matrix light-emitting device is likely to increase the manufacturing cost per sheet because a TFT is manufactured. However, by applying the above embodiment mode, a material loss in forming a light-emitting element is significantly reduced. It is possible to make it. Therefore, the manufacturing cost can be reduced.

In addition, by applying the above embodiment mode, an EL layer included in the light-emitting element can be easily formed, and a light-emitting device including the light-emitting element can be easily manufactured. In addition, since a flat and uniform film can be formed and a fine pattern can be formed, a high-definition light-emitting device can be obtained. In addition, since film formation can be performed only by pressure-bonding the deposition target substrate and the deposition substrate, the tact time can be shortened, and the manufacturing cost of the light-emitting device can be reduced.

Note that the structure described in this embodiment can be combined with any of the structures described in the other embodiments as appropriate.

(Embodiment 6)
In this embodiment, various electronic devices completed using the light-emitting device manufactured by applying the above embodiment will be described with reference to FIGS.

As electronic devices to which the light-emitting device according to this embodiment is applied, cameras such as televisions, video cameras, and digital cameras, goggle-type displays (head-mounted displays), navigation systems, and sound playback devices (car audio, audio components, etc.) , Notebook computers, game machines, portable information terminals (mobile computers, cellular phones, portable game machines, electronic books, etc.), image playback devices equipped with recording media (specifically, digital video disc (DVD) recording, etc.) A device provided with a display device capable of reproducing a medium and displaying an image thereof), a lighting fixture, and the like. Specific examples of these electronic devices are shown in FIGS.

FIG. 10A illustrates a display device, which includes a housing 8001, a support base 8002, a display portion 8003, a speaker portion 8004, a video input terminal 8005, and the like. The light-emitting device formed using any of the above embodiments can be used for the display portion 8003. The display device includes all information display devices such as a personal computer, a TV broadcast reception, and an advertisement display. By applying the present embodiment, a pattern (pattern) spreading in a plane shape with an accurate dimension mainly in a film forming process of a light emitting device is formed with a layer containing an organic compound, and manufacturing efficiency is improved. Therefore, the manufacturing cost in manufacturing the display device can be reduced and the productivity can be improved, and an inexpensive display device can be provided.

FIG. 10B illustrates a computer, which includes a housing 8102, a display portion 8103, a keyboard 8104, an external connection port 8105, a pointing device 8106, and the like. Note that the computer is manufactured using the light-emitting device formed using the above embodiment for the display portion 8103. By applying the present embodiment, a pattern (pattern) spreading in a plane shape with an accurate dimension mainly in a film forming process of a light emitting device is formed with a layer containing an organic compound, and manufacturing efficiency is improved. Therefore, it is possible to reduce the manufacturing cost and improve the productivity in manufacturing the computer, and it is possible to provide an inexpensive computer.

FIG. 10C illustrates a video camera, which includes a display portion 8202, an external connection port 8204, a remote control receiving portion 8205, an image receiving portion 8206, operation keys 8209, and the like. Note that the video camera is manufactured using the light-emitting device formed using the above embodiment for the display portion 8202. By applying this embodiment mode, a pattern (pattern) spreading in a plane shape with an accurate dimension mainly in a film forming process of a light-emitting device is formed with a layer containing an organic compound, and manufacturing efficiency is improved. Therefore, it is possible to reduce the manufacturing cost and improve the productivity in manufacturing the video camera, and to provide an inexpensive video camera.

FIG. 10D illustrates a mobile phone, which includes a display portion 8403, an audio input portion 8404, an audio output portion 8405, operation keys 8406, an external connection port 8407, and the like. Note that the cellular phone is manufactured using the light-emitting device formed using the above embodiment for the display portion 8403. In addition, the mobile phone may have an infrared communication function, a television reception function, or the like. By applying this embodiment mode, a pattern (pattern) spreading in a plane shape with an accurate dimension mainly in a film forming process of a light-emitting device is formed with a layer containing an organic compound, and manufacturing efficiency is improved. Therefore, the manufacturing cost can be reduced and the productivity can be improved in manufacturing the mobile phone, and an inexpensive mobile phone can be provided.

FIG. 10E illustrates a desk lamp, which includes a lighting unit 8301, an umbrella 8302, a variable arm 8303, a power source 8305, and the like. Note that the desk lamp is manufactured by using the light-emitting device formed using the above embodiment for the lighting portion 8301. The lighting fixture includes a ceiling-fixed lighting fixture or a wall-mounted lighting fixture. By applying this embodiment mode, a pattern (pattern) spreading in a plane shape with an accurate dimension mainly in a film forming process of a light-emitting device is formed with a layer containing an organic compound, and manufacturing efficiency is improved. Therefore, it is possible to reduce the manufacturing cost and improve the productivity in the manufacture of the desk lamp and to provide an inexpensive desk lamp.

As described above, an electronic device or a lighting fixture can be obtained by using the light-emitting device according to any of the above embodiments. The applicable range of the light-emitting device of the above embodiment is so wide that the light-emitting device can be applied to electronic devices in various fields.

Note that the structure described in this embodiment can be combined with any of the structures described in the other embodiments as appropriate.

In this example, an example of manufacturing a light-emitting element will be described. The structural formula of the material used in this example is shown below.

A method for manufacturing a deposition target substrate will be described. The deposition target substrate has a glass substrate as a supporting substrate and a first electrode. The first electrode is made of indium oxide-tin oxide containing silicon or silicon oxide with a thickness of 110 nm formed by a sputtering method.

Next, a first layer was formed. The deposition target substrate is fixed to a substrate holder provided in the deposition chamber in the vacuum evaporation apparatus so that the surface on which the first electrode is formed is downward, and after reducing the pressure to about 10 ⁻⁴ Pa, Co-evaporation of 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), which is a substance having a high hole-transport property, and molybdenum (VI) oxide, which is an acceptor substance As a result, a first layer to be a part of the hole injection layer included in the EL layer was formed. The film thickness was 5 nm, and the weight ratio of NPB and molybdenum oxide (VI) was adjusted to 4: 1 (= NPB: molybdenum oxide). Note that the co-evaporation method is an evaporation method in which evaporation is performed simultaneously from a plurality of evaporation sources in one processing chamber.

A method for manufacturing a deposition substrate is described. Protrusions with a width of 158 μm are formed on a glass substrate using a titanium film having a thickness of 600 nm with a spacing of 262 μm, and silicone oil (Shin-Etsu Chemical Co., Ltd.) is used as a release agent on the surface including the convexes of the substrate for film formation. The product coated with (manufactured) was used as a substrate for film formation.

Next, a second layer was formed. The second layer is formed from the second electrode, the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer, and the hole injection layer in this order from the side in contact with the release agent that covers the convex portion of the film formation substrate. Have a part.

The substrate for film formation is fixed to the substrate holder provided in the film formation chamber in the vacuum evaporation apparatus so that the surface to which the release agent is applied is lowered, and the pressure is reduced to about 10 ⁻⁴ Pa, followed by resistance heating. As a second electrode, aluminum was formed to a thickness of 200 nm by a vapor deposition method, and then lithium fluoride (LiF) was formed to a thickness of about 1 nm as an electron injection layer.

Next, a bathophenanthroline (abbreviation: BPhen) film is formed to a thickness of 20 nm by a resistance heating vapor deposition method, and subsequently tris (8-quinolinolato) aluminum (abbreviation: abbreviation: Alq) was formed to a thickness of 10 nm to form an electron transport layer.

Next, 9- [4- (N-carbazolyl) phenyl] -10-phenylanthracene (abbreviation: CzPA) and 9,10-diphenyl-2- [N-phenyl-N- (9-phenyl-9H-carbazole-) A light emitting layer was formed by co-evaporating 3-yl) amino] anthracene (abbreviation: 2PCAPA) in a weight ratio of CzPA: 2PCAPA = 1: 0.05. CzPA is a substance having an electron transporting property, and 2PCAPA is a substance that emits green light. The film thickness was 30 nm.

Next, NPB was formed to a thickness of 10 nm by a vapor deposition method using resistance heating to form a hole transport layer.

Next, a part of the hole injection layer was formed by co-evaporation of NPB and molybdenum oxide (VI) which is an acceptor substance. The film thickness was 50 nm, and the weight ratio of NPB and molybdenum oxide (VI) was adjusted to 4: 1 (= NPB: molybdenum oxide).

Next, the first layer on the deposition target substrate and the second layer of the deposition target substrate were pressed to face each other. The first layer and the second layer have a part of the hole injection layer on which NPB and molybdenum oxide (VI), which is an acceptor substance, are co-deposited on the surface. To form a continuous layer.

Next, the deposition substrate and the deposition substrate were separated, and the second layer was transferred over the first layer to form a film. FIG. 11 shows the results of observation of the light-emitting element manufactured by the above method using a microscope. The EL elements formed by transfer were formed to have a width of 158 μm and an interval of 262 μm, and had the same width and the same interval as the convex portions of the film formation substrate.

As described above, the adhesion between the first layer on the deposition substrate and the second layer on the deposition substrate is increased, and the film is not peeled off when the deposition substrate and the deposition substrate are peeled off. The continuous EL layer can be transferred onto the deposition target substrate. Further, according to the method for manufacturing the light-emitting element exemplified in this embodiment, an EL layer having a fine shape can be easily manufactured.

100 Support Substrate 105 Material Layer 111 Base Layer 150 Deposition Substrate 151 Layer 151a Layer 200 Support Substrate 200A Support Substrate 200B Support Substrate 200C Support Substrate 200R Support Substrate 211 Protrusion 211a Top 211b Ridge Line 215 Layer 220A Protrusion 220B Protrusion 220C Convex portion 220C_1 Top portion 220C_2 Ridge portion 250 Film formation substrate 250A Film formation substrate 250B Film formation substrate 250C Film formation substrate 250G Film formation substrate 250R Film formation substrate 251 Layer 251a Layer 252 Layer 300 Support substrate 301 Electrode 301B Electrode 301G Electrode 301R Electrode 302 Electrode 303 EL Layer 303B EL Layer 303G EL Layer 303R EL Layer 304 Layer 305 Layer 305B Layer 305G Layer 305R Layer 308 EL Layer 311 Hole Injection Layer 311a Part of Hole Injection Layer 311b Hole Part 312 of the entrance layer Hole transport layer 313 Light emitting layer 314 Electron transport layer 315 Electron injection layer 320 Partition 350 Deposited substrate 1101 Substrate 1104 Insulating layer 1113 Electrode 1114 Partition 1116 Electrode 1121 Light emitting region 1122 Partition 1202 Data line 1203 Scan line 1204 Partition 1205 Area 1206 Input terminal 1207 Input terminal 1208 Connection wiring 1209a FPC
1209b FPC
1300 EL layer 1301 Drive circuit portion 1302 Pixel portion 1303 Drive circuit portion 1304 Sealing substrate 1305 Sealing material 1307 Space 1308 Wiring 1309 FPC
1310 Element substrate 1311 Switching TFT
1312 Current control TFT
1313 Electrode 1314 Insulator 1315 Light emitting element 1316 Electrode 1323 n-channel TFT
1324 p-channel TFT
8001 Case 8002 Support base 8003 Display unit 8004 Speaker unit 8005 Video input terminal 8102 Case 8103 Display unit 8104 Keyboard 8105 External connection port 8106 Pointing device 8202 Display unit 8204 External connection port 8205 Remote control receiver 8206 Image receiving unit 8209 Operation key 8301 Illumination Unit 8302 umbrella 8303 variable arm 8305 power source 8403 display unit 8404 audio input unit 8405 audio output unit 8406 operation key 8407 external connection port

Claims (4)

Providing a film-forming first layer having a surface containing a first organic compound on a deposition target substrate;
Providing a film-forming second layer having a surface containing the first organic compound on at least the convex portion of the film-forming substrate;
The surface of the first layer containing the first organic compound and the surface of the second layer containing the first organic compound are pressure bonded,
The deposition target substrate and the deposition substrate are separated from each other,
A film forming method of transferring the second layer from a convex portion of the film formation substrate onto the first layer of the film formation substrate. A region having excellent peelability at least at the top of the convex portion,
The film forming method according to claim 1, wherein a film-forming substrate is used in which an adhesive force between the region having excellent releasability and the second layer is lower than an adhesive force between the first layer and the deposition target substrate. A method for manufacturing a light-emitting element using the film forming method according to claim 1. The method for manufacturing a light-emitting element according to claim 3, wherein the film-formable layer having a surface containing the first organic compound is a mixed material layer containing an electron-accepting material.