JP2011185660A - Temperature sensor circuit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To highly accurately and stably obtain a temperature coefficient in a desired temperature region by a temperature sensor circuit with a simple structure, which is assembled on the substrate of an integrated circuit, and is used as a reference for temperature compensation of the integrated circuit. <P>SOLUTION: The temperature sensor circuit includes: a plurality p of temperature-sensitive elements whose temperature coefficients are different; and a composite detection circuit for detecting a temperature as a product sum of currents flowing individually through the plurality p of temperature-sensitive elements or converted values of these currents, and the plurality p of weights corresponding individually to the plurality p of temperature-sensitive elements. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a temperature sensor circuit which is incorporated on a substrate of an integrated circuit and serves as a reference for temperature compensation of the integrated circuit.

A temperature sensor serving as a reference for temperature compensation is arranged on a substrate of an integrated circuit that requires stable operation in a desired temperature range.
Conventionally, as such an element for detecting the temperature at a predetermined location on a substrate in such a temperature sensor, a PN junction in which a forward voltage drop changes according to the temperature is often used.

  In addition, as a prior art relevant to this invention, there existed the technique published in the following patent documents 1-patent documents 5. FIG.

(1) “Difference of connecting one input terminal to the output terminal of a temperature sensor circuit consisting of a temperature sensor current source whose current amount changes in proportion to the absolute temperature and a resistor connected between the temperature sensor current source and ground. A dynamic amplifier, a plurality of diodes connected in series in the same direction between the other input terminal of the differential amplifier and the ground, and an input terminal of the grounded amplifier connected to the output terminal of the differential amplifier. "Equipped with the grounded amplifier with a negative feedback resistor connected between the output terminal and one input terminal of the differential amplifier", thereby improving sensitivity and accuracy without being obstructed by technical restrictions Is a temperature sensor circuit characterized in that "

(2) By “dispersing and mixing particles whose resin surface is coated with metal in a resin having a linear expansion coefficient different from that of the resin constituting the particles to have positive or negative resistance / temperature characteristics” , "A temperature sensor device characterized in that any positive or negative temperature coefficient can be obtained by the same material system or the same manufacturing technique" ... Patent Document 2

(3) “The temperature compensation circuit consists of a primary and secondary temperature coefficient generation circuit, a sign inversion circuit, a primary and secondary temperature coefficient adjustment circuit composed of a plurality of resistors having different temperature coefficients from the operational amplifier. The resistance values of the resistors of the primary and secondary temperature coefficient generation circuits are set so that the voltage amplification factor changes linearly or in a quadratic function with respect to the temperature change, and the sign inversion circuit has primary and secondary temperature coefficients The sign of the temperature coefficient generated by the generation circuit is inverted, the primary and secondary temperature coefficient adjustment circuits adjust the temperature coefficient generated by the primary and secondary temperature coefficient generation circuits to a predetermined value, and the temperature compensation circuit is temperature compensated. By generating an arbitrary temperature coefficient necessary for the sensor, and canceling the offset drift constant in the temperature characteristic of the sensor output, and the fluctuation component due to the span shift primary and secondary temperature coefficients. Compensation Temperature compensation circuit characterized by “represent” ... Patent Document 3

(4) In a semiconductor device having two transistors with different emitter areas and having a temperature detection circuit that detects temperature based on the difference between the base-emitter voltages of both transistors varying with temperature The temperature detection circuit has a feedback circuit for controlling the collector voltage and / or the emitter current of both transistors so that the collector voltage of both transistors fluctuates with the same temperature characteristic. A temperature sensor that is characterized by the fact that it can be detected with high accuracy and high linearity ... Patent Document 4

(5) “An infrared sensor that detects an infrared ray emitted from a measurement object and outputs a first voltage corresponding to the temperature of the measurement object; detects a sensor temperature of the infrared sensor; and corresponds to the sensor temperature. The first voltage and the second voltage that are output from the temperature sensor that outputs the second voltage, the infrared sensor, and the temperature sensor, respectively, are acquired, and the temperature of the measurement object is determined as the first voltage. The first coefficient is different from the second coefficient, and the first coefficient is a coefficient for converting the voltage to the second voltage, and the second coefficient is a coefficient for converting the sensor temperature to the second voltage. A temperature detection device that is characterized by “acquisition of the temperature of the measurement object with high accuracy” by including a temperature calculation unit that is set to a value and obtains the temperature of the measurement object according to Equation 1 ... Patent Literature 5

JP-A 64-000429 JP 2001-326105 A JP 2002-286573 A JP 2003-337069 A JP 2007-198745 A

  However, in the conventional temperature sensor, the temperature coefficient of the PN junction that is sensitive to temperature is only a negative number (the forward voltage drop monotonously decreases with respect to temperature), so the temperature range in which the integrated circuit should operate normally It has not always been possible to sufficiently achieve supplying a bias current to a circuit to be compensated for temperature or obtaining a substantial temperature as an electric signal over the entire area.

  Particularly, in recent years, since the power supply voltage is set to 1 volt or less according to the miniaturization of the process, the range that the instantaneous value of the electric signal can take is [power supply voltage (≈1 volt) −0.6] volts. It is extremely narrow as [power supply voltage −0.4] volts, and it is becoming difficult to obtain an instantaneous value according to temperature with sufficient accuracy.

  In the conventional example, the positive temperature coefficient is obtained by adding a conversion circuit separately, but depending on the temperature characteristic (temperature coefficient) of the conversion circuit, there is a possibility that temperature compensation with sufficient accuracy may not be possible. .

  An object of this invention is to provide the temperature sensor circuit which can obtain the temperature coefficient in a desired temperature range accurately and stably by simple structure.

  In the first aspect of the present invention, the temperature sensors of the plurality of p have different temperature coefficients. The combination detection circuit calculates the temperature as a sum of products of currents individually flowing through the plurality of p temperature sensing elements, or a converted value of these currents, and a plurality of p weights individually corresponding to the plurality of p temperature sensing elements. Detect.

  Such a temperature is detected by a desired temperature coefficient obtained by a combination of a temperature coefficient of the plurality of p temperature sensing elements and a plurality of weights.

  According to a second aspect of the present invention, in the temperature sensor circuit according to the first aspect, one end of each of the plurality of temperature sensing elements is individually grounded. The synthesis detection circuit obtains the product sum by current addition.

  That is, in the plural p temperature sensing elements, one end thereof is individually grounded, so that an unnecessary offset voltage is not superimposed on the terminal voltage (potential) in the temperature range to be detected. In addition, the characteristics of these temperature sensitive elements according to the temperature are reflected in the product sum without being converted into a voltage.

  According to a third aspect of the present invention, in the temperature sensor circuit according to the first or second aspect, a part of the weights of the plurality p is different in sign from the remaining weights.

  That is, the temperature coefficient used for temperature detection is either a positive number or a negative number depending on the combination of the currents individually flowing to the plurality of p temperature sensing elements or their converted values and the weights of the plurality of p. Can be set flexibly.

  According to a fourth aspect of the present invention, in the temperature sensor circuit according to any one of the first to third aspects, the plurality of temperature sensing elements are configured as diodes or transistors having different sizes.

  That is, the temperature coefficient of the plurality of p temperature sensing elements is set to various different values under the semiconductor process.

  According to a fifth aspect of the present invention, in the temperature sensor circuit according to any one of the first to third aspects, the plurality of p temperature sensing elements are diodes or transistors connected in parallel by different numbers. Configured as a combination.

  In other words, even when the plurality of p temperature sensing elements are arranged on the semiconductor substrate, the temperature coefficient is set to various different values without making the configuration unique.

  As described above, according to the present invention, even when a temperature-sensitive element having a desired temperature coefficient does not exist alone, the temperature coefficient can be obtained accurately and stably, and the temperature can be detected with the desired sensitivity. It becomes possible.

  Further, even when the power supply voltage is low, a detectable temperature range and accuracy are ensured to be high.

  Furthermore, it is possible to avoid complication and increase in scale of a circuit that operates under the temperature sensor circuit according to the present invention without causing unnecessary restrictions on the accuracy and range of the temperature to be detected.

  In addition, the overall temperature coefficient of the temperature sensor circuit according to the present invention is consistent with any of the miniaturization achieved by the semiconductor process, adoption of new materials, higher capacity, higher performance, and lower cost. The desired value is set accurately and stably.

  Therefore, the circuit and apparatus to which the present invention is applied flexibly adapts to a decrease in power supply voltage in accordance with miniaturization of the process, and is subject to temperature detection and temperature compensation that are performed stably and accurately over a wide temperature range. Increases performance, reliability and price / performance.

It is a figure which shows 1st embodiment of this invention. It is a figure which shows 2nd embodiment of this invention. It is a figure which shows 3rd embodiment of this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[First embodiment]
FIG. 1 is a diagram showing a first embodiment of the present invention.

In the figure, the sources of FETs 11, 12, 13, 14, and 15 are connected to the power supply line. Drain of FET11,15 is grounded through a resistor 16 _L, and is connected to the other circuits connected to the same substrate as the temperature sensor circuit according to this embodiment (not shown.). The output of the operational amplifier 17 is connected to the gates of the FETs 13, 14 and 15. The drain of the FET 13 is connected to the inverting input of the operational amplifier 17, the non-inverting input of the operational amplifier 18, and the emitter of the transistor 19n. The drain of the FET 14 is connected to the non-inverting input of the operational amplifier 17 and is connected to the emitter of the transistor 19p through the resistor 16p. The base and collector of the transistor 19n and the base and collector of the transistor 19p are grounded. The output of the operational amplifier 18 is connected to the gate of the FET 20, and the drains of the FET 20 are connected to the gates of the FETs 11 and 12 and the drain of the FET 12. The source of the FET 20 is connected to the inverting input of the operational amplifier 18 and grounded through the resistor 16n.
Here, the transistors 19n and 19p are PNP transistors. The FET 20 is an N-channel FET, and the other FETs 11, 12, 13, 14, and 15 are P-channel FETs.

The operation of this embodiment will be described below with reference to FIG.
In the following, in order to briefly explain the operation of the present embodiment, the above-described configuration is divided into the following five blocks as shown by a one-dot chain line frame and a hatched frame in FIG. A name and a code will be given.

(1) Sensor 30n composed only of transistor 19n
(2) Sensor 30p composed of resistor 16p and transistor 19p
(3) Current source 40 including FETs 13 and 14 and operational amplifier 17
(4) Buffer amplifier unit 50 including operational amplifier 18, FET 20 and resistor 16n
(5) FET11,12,15 and a resistors 16 _L current adder 60

  In the current source 40, the operational amplifier 17 causes each of the FETs 13 and 14 to have such a value that the difference ΔV between the potential Vp of the temperature sensor 30p (resistor 16p) and the potential Vn of the temperature sensor 30n (emitter of the transistor 19n) is compressed. The resistance value between the source and the drain is maintained.

  Therefore, the potentials of the sensor 30n (emitter of the transistor 19n) and the sensor 30p (resistor 16p) are kept equal even if the resistance values of the sensors 30n and 30p change according to the temperature.

By the way, the size of the transistor 19n (collector) is set in advance to a value smaller than the size of the transistor 19p (collector). Therefore, the rate of change of the emitter potentials Vne and Vpe of the transistors 19n and 19p with respect to the temperature (hereinafter referred to as “temperature coefficient”) δn and δp are both negative, but the absolute values of these temperature coefficients δn and δp are: As shown in the following equation including a positive number N determined by the size, the latter is larger than the former.
δp = N · δn

  On the other hand, the potential Vp of the resistor 16p drops (rises) due to a drop (rise) of the potential of the emitter of the transistor 19p in response to a rise (fall) in temperature. However, the operational amplifier 17 provided in the current source 40 maintains the potentials of the gates of the FETs 13 and 14 so that the difference between the potential Vp and the potential Vn described above is compensated. In addition, since the gate potential of the FET 14 is maintained under feedback performed by the operational amplifier 17 in the current source 40, it can be stably realized without a special temperature compensation circuit.

That is, the rate of change δIp with respect to the temperature of the current Ip injected into the resistor 16p (sensor 30p) is directly proportional to the above-described temperature coefficient (δn−δp) and increases (decreases) in temperature. ) To increase (decrease).
δIp∝ (δn−δp)

The FET 15 is driven by the operational amplifier 17 together with the FET 14, thereby causing the resistor 16 _L to have a current that decreases (increases) as the temperature increases (decreases) in the same manner as the current Ip (here, for the sake of simplicity, the current Ip Inject approximately).

  On the other hand, in the buffer amplifier 50, the operational amplifier 18 sets the resistance value between the drain and source of the FET 20 to a smaller value as the potential Vn (= Vne) of the sensor 30n (emitter of the transistor 19n) is higher.

Therefore, the value of the rate of change δIn with respect to the temperature of the current In flowing in the path composed of the FETs 12 and 20 and the resistor 16n is the temperature in the state where the FETs 12 and 20 and the operational amplifier 18 operate in the saturation region, as shown in the following equation: The value is proportional to the coefficient δn.
δIn∝δn

The FETs 11 and 12 constitute a current mirror circuit 60mn having a current mirror ratio set to a predetermined value (= M) as shown by a two-dot chain line in FIG. 1, and the current (= M · In) It is converted into current in of the current mirror Ritsubai injected into resistor 16 _L.

That is, the current Is and the rate of change δIs for the temperature is injected into the resistor 16 _L is the product of the above-described current Ip and In, as shown in the following equation, a positive number N and a current mirror ratio M described above Given as sum.
Is = N · Ip + M · In (a)
δIs = N · δIp + M · δIn (b)

  As described above, according to the present embodiment, the change in the current Is with respect to the temperature depends on the size (current Ip, In) of the transistors 19p and 19n (collectors thereof), the positive number N, and the current mirror ratio M. The value of the rate δIs can be set to a desired positive value as well as a negative number.

  Therefore, the desired temperature coefficient is flexibly and accurately realized even when a temperature sensitive element having the temperature coefficient alone cannot be obtained.

In the present embodiment, the buffer amplifier 50 is directly driven by the voltage Vn (= Vne) that decreases (increases) in response to a temperature rise (decrease), and the FET 15 increases in response to a temperature rise (decrease). (reduction) is directly driven by the operational amplifier 17 to maintain the current Ip constant of the temperature is detected by the synthesis of current injected to the resistor 16 _L under these direct drive.

Therefore, the voltage drop across the resistor 16 _L due to the current constantly flows regardless of the temperature can be avoided, as compared with the conventional example, it is possible to expand the range of detectable temperature.

Furthermore, the maximum value of the potential V ₀ of the resistor 16 _L is expanded to the difference between the power supply voltage and the “voltage drop V _DS between the source and drain of the FET 15 (0.2 volts ≦ V _DS ≦ 0.3 volts). Therefore, a large gradient of output voltage with respect to temperature can be secured.

[Second Embodiment]
FIG. 2 is a diagram showing a second embodiment of the present invention.
In the following, elements having the same configuration and function as those shown in FIG. 1 are given the same reference numerals, and description thereof is omitted here.

The difference in configuration between the present embodiment and the first embodiment shown in FIG. 1 is as follows.
(1) Instead of the resistor 16 _L , cascade-connected resistors 16 _L1 and 16 _L2 (resistance values are R _L1 and R _L2 , respectively) are provided.
(2) FET 11 (output of the current mirror circuit 60 mN) the drain of, is separated from the drain of the FET 15, is connected to a connection point of the resistors ₁₆ L1, _{16 L2.}

The operation of this embodiment will be described below with reference to FIG.
FET11 current supplied from the (current mirror circuit 60 mN) is to be injected only into the resistor _{16 L2,} the rate of change δIs against current Is and temperature flows through the resistor ₁₆ L1, _{16 L2} is the above formula ( Instead of a) and (b), the following expressions (c) and (d) are given for the voltage dividing ratio r (= R _L2 / (R _L1 + R _L2 )) of the resistors 16 _L1 and 16 _L2 .
Is = N · Ip + M · r · In (c)
δIs = N · δI + M · r · δIn (d)

  Therefore, according to the present embodiment, the current Is and the rate of change δIs are not only the values of the sizes of the transistors 19p and 19n (collector), the positive number N and the current mirror ratio M described above, but also the voltage dividing ratio r Accordingly, it is possible to flexibly set a negative value or a positive value to a desired value, and as in the first embodiment described above, both of the detectable temperature range and the gradient of the output voltage with respect to the temperature are conventional. It can be secured larger than the example.

[Third embodiment]
FIG. 3 is a diagram showing a third embodiment of the present invention.
In the following, elements having the same configuration and function as those shown in FIG. 1 are given the same reference numerals, and description thereof is omitted here.

  The difference between the present embodiment and the first embodiment shown in FIG. 1 is that the FETs 14 and 15 are configured as a current mirror circuit 60mp as indicated by a two-dot chain line in FIG. The current mirror ratio is set to a desired value N ′.

The operation of this embodiment will be described below with reference to FIG.
A current Is supplied from the current mirror circuit 60mp (FET15) to resistor 16 _L, the rate of change δIs respect to temperature of the current Is, aforementioned formula (a), rather than (b), the said current mirror ratio The following formulas (e) and (f) for (= N ′) are shown.
Is = N ′ · Ip + M · In (e)
δIs = N ′ · δIp + M · δIn (f)

  Therefore, according to the present embodiment, the current Is and its change rate δIs can be flexibly set to a desired negative or positive value according to the value of the current mirror ratio (= ′ N) of the mirror circuit 30mp, As in the first embodiment described above, both the detectable temperature range and the gradient of the output voltage with respect to the temperature can be ensured larger than the conventional example.

Hereinafter, the principle of the first to third embodiments described above will be described quantitatively based on the following references 1 and 2.
[Reference 1] Paul R Gray, Robert G. Meyer: “Analysis and Design of
Analog Integrated Circuits ”, John Wiley & Sons, 1984.
[Reference 2] Behzad Razavi, “Design of Analog CMOS Integrated Circuits”, the McGraw-Hill
Companies

The temperature coefficient of the base-emitter voltage V _BE of the bipolar transistor is [Reference 1].
The Boltzmann constant k, the absolute temperature T, the electron charge q, the temperature independent constants E and G, and 0 ° K.
As shown in the following formula (1), the silicon band gap voltage at V _G0 and V _T (= kT / q) are negative values.

In addition, the collector voltage difference ΔV _BE of two bipolar transistors through which the same current flows (corresponding to the transistors 19p and 19n having an area ratio of 1 to N in the first to third embodiments described above) As shown in Reference 2], it is expressed by the following formula (2).

Therefore, the currents Ip and In in the first to third embodiments described above are expressed by the following expression (3) from the above expressions (1) and (2).

A voltage drop V _out generated when both of these currents Ip and In flow through the resistor _RL is expressed by the following equation (4).

Assuming that the slope at T = T ₀ is A, the following equations (5) and (6) are established from the above equation (4).

The voltage drop V _out shown in the above equation (4) is expressed by the following equation (7) derived by substituting the above equation (6) into the equation (4).
Here, the inside of the braces in the above equation (7) shows a general band gap reference voltage source circuit and has a substantially constant value, so that a temperature sensor having a temperature gradient A [V / ° C.] can be configured.

Accordingly, the first to third embodiments described above, the above equation (6), to a value which satisfies both the (7), the transistors 19p, 19n, 16 _L
Resistance values Rp, Rn, R _{L of} (16 _L1 , 16 _L2 )
By setting the values of (R _L1 , R _L2 ) in advance, a desired bias voltage and temperature coefficient are realized.

In each of the embodiments described above, the values of the currents Ip, In, the positive number N (N ′), and the current mirror rate M may be set based on any of the following.
(a) Voltage applied to the sources of the FETs 13 and 14 (may be different)
(b) Resistance value Rp of the resistor 16p
(c) Resistance value Rn of resistor 16n

Further, in each of the above-described embodiments, if the temperature coefficient is set to a desired different value, the transistors 19p and 19n are configured in any of the following forms or a combination of all or part of these forms. May be.
(A) Substitution with different number of transistors connected in series and connected to each other (Darlington connection or PNP type and NPN type may be mixed) or diode
(B) Replacement by transistors connected in parallel and different in number (Darlington connection or PNP type and NPN type may be mixed) or diode
(C) Your hand or some transistors are not grounded to the nest.

  Furthermore, in each of the above-described embodiments, the currents Ip and In, the positive number N (N ′), the current mirror ratio M, and the configurations of the sensors 30p and 30n may not be constant. Depending on the request given from the outside, any of the above (a) to (c), (A) to (C), or any combination thereof may be appropriately changed.

  Such a change may be made based on any of the function, performance, configuration, operation mode, environmental conditions, and the like of an apparatus or system on which the integrated circuit to which the present embodiment is applied should operate.

Further, in each of the embodiments described above, power is supplied to the sensors 30p and 30n by the current source 40 at a common voltage.
However, such electric power may be supplied by a current source or a voltage source having a configuration different from that of the current source 40, for example.

In each embodiment described above, the resistance value between the source and drain of the FET 15 is varied by the operational amplifier 17 provided in the current source 40.
However, the resistance value between the source and the drain of the FET 15 is directly variable according to the potential Vpe of the emitter of the transistor 19p, and may be set to a smaller (larger) value as the potential Vpe is lower (higher). .

  Further, in each of the above-described embodiments, if the current addition processing performed by the current addition unit 60 sufficiently achieves expansion of the detectable temperature range and securing of the output voltage gradient with respect to temperature, Any addition processing such as voltage addition may be substituted.

  In each of the above-described embodiments, the effective temperature coefficients of the sensors 30p and 30n are set to values having different signs, but these temperature coefficients have a gradient with respect to the temperature of the voltage obtained at the output terminal. If they are set to desired values according to the positive number N (N ′) and the current mirror ratio M, both of them may be set to the same sign value.

Furthermore, in each of the above-described embodiments, a desired temperature coefficient is obtained by weighted addition of the effective temperature coefficients of the two sensors 30p and 30n.
However, such a desired temperature coefficient may be obtained, for example, by adding effective temperature coefficients of three or more sensors (regardless of sign and absolute value) under suitable weighting.

In each of the embodiments described above, in the sensors 30p and 30n, a PN junction formed between the emitter and base of the transistors 19p and 19n is used as a temperature sensitive element.
However, these temperature-sensitive elements may be replaced with diodes or any other elements as long as they are formed on the IC substrate.

  Furthermore, the present invention is not limited to the configuration described in FIGS. 1 to 3 as long as a desired temperature coefficient can be obtained by multiplying the characteristics according to the temperature of the plurality of temperature sensing elements by a predetermined weight. For example, the sensors 30p and 30n are replaced with elements or circuits whose capacitance, reactance, impedance, or other physical quantities change according to temperature, and the same temperature coefficient is used as a weighted product sum of these physical quantities or converted values. It may be configured as any circuit that can be obtained.

  Further, the present invention is not limited to the above-described embodiments, and various configurations of the embodiments are possible within the scope of the present invention, and any improvements may be made to all or some of the components.

  Hereinafter, the inventions disclosed in the present application will be organized and listed in a format according to the descriptions in the “Claims” and “Means for Solving the Problems” columns.

[Claim 6] In the temperature sensor circuit according to claim 2,
The synthesis detection circuit includes:
The output of the current mirror circuit individually corresponding to the plurality of p temperature sensing elements is the target of the current addition,
The weight of the plurality of p is set as a current mirror ratio of a current mirror circuit individually corresponding to the plurality of p temperature sensing elements.

  In the temperature sensor circuit having such a configuration, in the temperature sensor circuit according to claim 2, the composite detection circuit is configured to apply an output of a current mirror circuit individually corresponding to the plurality of p temperature sensing elements to the current addition target. And The plurality of p weights are set as current mirror ratios of current mirror circuits individually corresponding to the plurality of p temperature sensitive elements.

  That is, the current mirror circuit in which the weights of a plurality of p reflected in the sum of products corresponding to the overall temperature coefficient are not given as a voltage and the gain is not limited by the power supply voltage as compared with the resistance load type circuit. It is set by the configuration of

  Therefore, it is possible to detect the temperature based on a desired temperature range, accuracy, sensitivity, and temperature coefficient without complicating the circuit configuration.

[Claim 7] In the temperature sensor circuit according to claim 5,
A temperature sensor circuit comprising: a control means for varying the number or combination of the different number of diodes or transistors to be connected in parallel for each of the plurality of p temperature sensing elements according to a request given from the outside. .

  In the temperature sensor circuit having such a configuration, in the temperature sensor circuit according to claim 5, the control means includes a number of diodes or transistors to be connected in parallel for each of the plurality of p temperature-sensitive elements. Alternatively, the combination is varied according to a request given from the outside.

  That is, it is possible to change the temperature coefficient and sensitivity at which the detection is to be realized, together with the temperature range to be detected.

  Therefore, the temperature sensor circuit according to the present invention can flexibly realize the temperature detection in various environmental conditions and the configuration and operation status of the circuit operating under the temperature sensor circuit.

11, 12, 13, 14, 15, 20 FET
_{16n, 16p, 16 L, 16} L1, 16 L2 resistors 17 and 18 operational amplifier 19n, 19p transistors 30n, 30p sensor 40 current source 50 buffer amplifier 60 current adding unit 60mn, 60mp current mirror circuit

Claims (5)

A plurality of p temperature sensing elements having different temperature coefficients;
A combined detection circuit that detects the temperature as a sum of products of currents individually flowing through the plurality of p temperature sensing elements or a converted value of these currents and a plurality of p weights individually corresponding to the plurality of p temperature sensing elements. And a temperature sensor circuit comprising: The temperature sensor circuit according to claim 1,
The plural p temperature sensing elements are:
One end is grounded individually,
The synthesis detection circuit includes:
A temperature sensor circuit characterized in that the sum of products is obtained by current addition. The temperature sensor circuit according to claim 1 or 2,
Some of the weights of the plurality p are
A temperature sensor circuit characterized by a different sign from the remaining weights. The temperature sensor circuit according to any one of claims 1 to 3,
The plural p temperature sensing elements are:
A temperature sensor circuit that is configured as a diode or transistor of different sizes. The temperature sensor circuit according to any one of claims 1 to 3,
The plural p temperature sensing elements are:
A temperature sensor circuit comprising a combination of different numbers of diodes or transistors connected in parallel.