JP2011166524A - Solid-state imaging apparatus, camera module, and electronic information device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus in which the position where a foreign substance such as dust generated in or entering a camera module is deposited on transparent glass of the solid-state imaging apparatus, is promptly specified, the position of the foreign substance affecting image quality is specified in a short period of time as needed while using an electronic device with the camera module packaged therein, and image deterioration caused by the foreign substance deposition is improved with the electronic device in use. <P>SOLUTION: A solid-state imaging apparatus 1 is equipped with: a solid-state imaging device 11 for imaging a subject and transparent glass 13 mounted on the solid-state imaging device so as to cover an imaging area of the solid-state imaging device. The solid-state imaging apparatus 1 is further equipped with a position detection unit 10a which detects the position of the foreign substance deposited on a surface of the transparent glass 13, while including a photo resistor layer 10 where a portion light-shielded with the foreign substance becomes high resistance. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device, a camera module, and an electronic information device, and in particular, a function of identifying the position of a foreign substance attached to a light-transmitting lid portion of the solid-state imaging apparatus and eliminating the influence of the shadow of the foreign substance by signal processing. The present invention relates to a solid-state imaging device including the above, a camera module equipped with such a solid-state imaging device, and an electronic information device using the camera module.

  An imaging camera module used for a mobile phone or the like is a package in which a solid-state imaging device (IC chip as a CCD image sensor or a CMOS image sensor), an infrared filter, a wiring board having terminals, a lens and a lens holder are integrated. It has a structure.

  Recently, the process of the solid-state image sensor has been miniaturized, and dust or dust is very small (30 μm to 20 μm) on the light receiving portion of the solid-state image sensor used in the camera module and the optical path of the lid glass (IR cut filter). In the case where the image has a size as described above, the shadow of the foreign matter is projected as a black dot or a spot on the imaging screen, resulting in an image defect.

  In addition, within the range of the size of the foreign matter described above, due to the nature of light waves, the shadow of foreign matter such as dust and dust appears more clearly in the captured image as the position of the foreign matter is near the solid-state image sensor (light receiving unit). Image defects. On the other hand, when a foreign object adheres to the IR filter or transparent glass away from the solid-state image sensor (light-receiving part), the shadow of the foreign substance appears as a stain on the captured image, and moreover from the solid-state image sensor (light-receiving part). If a foreign object adheres to a distant lens, the captured image may not be significantly affected.

  Hereinafter, specific examples disclosed in Patent Documents 1 to 3 will be described.

  In particular, in the countermeasures against pixel defects of the image pickup devices disclosed in Patent Documents 2 and 3, if the pixel defects are several defects that are usually found during the test of the solid-state image pickup device (IC), A defective pixel is corrected by using information on peripheral pixels of the defective pixel by providing an alternative pixel or by programming the position information of the defective pixel in the DSP incorporated in the camera module from the test result.

  A black spot is a black spot that appears in an image captured by a camera, and a spot is a portion that appears in a black or brown color in a captured image when, for example, a white wall is projected. In both cases, the shadow when foreign matter such as dust adheres to the optical path is reflected in the captured image, the black dot is an image of the shadow of the foreign matter in the focused state, and the spot is in focus It is an image behind a foreign object in a blurred state.

  These minute foreign objects include those that were attached when the camera module components were received, those that were generated by dust generation during the manufacturing process, and AF (automatic) when the camera was used as a product. Some of them are newly generated due to wear of mechanism parts during operations such as focusing and zooming.

  First, the foreign material adhering when the components of the former camera module are received has many fine resin pieces, and dust generation in the manufacturing process is often caused by the camera module assembling apparatus.

  During shipping inspection in the camera module manufacturing process, if dust is on the light receiving part of the solid-state image sensor or on the lid glass (that is, on the optical path), the dust can be rejected. If it is temporarily attached to the wall surface of the lens holding part or the wiring board, foreign matter cannot be detected in the shipping inspection, and the inspected camera module is shipped as a non-defective product.

  Thereafter, vibrations or impacts are applied in the process of transporting and transporting the camera module, and if the dust moves on the light path of the solid-state imaging device or the lid glass, it becomes defective at the shipping destination (user).

  During the latter autofocus and zoom operations, when dust is generated due to the friction of the resin of the movable part including the macro lens, while the end user (for example, a mobile phone user with a camera) is using the camera module, Similarly, black spots and spots appear on the imaging screen.

  Conventionally, foreign substances such as dust or debris adhering to the parts used in the camera module are screened at the time of receiving the parts before assembling, and depending on the degree, they can be blown off by air blow or ultrasonic. A cleaning process such as water cleaning using HFE and HFE (hydrofluoroether) cleaning is performed.

  In addition, it is necessary to increase the cleanliness required for each process for dust generated in the manufacturing process (attached to camera module parts), but in addition to capital investment and maintenance of clean rooms, process maintenance Management, that is, cleaning the equipment and replacing worn parts is necessary.

  Further, at the time of shipment of the camera module, it is necessary to repeat the imaging test by adding vibration of the camera module for a certain period of time to verify the presence of dust (movable foreign substance at that time) inside the camera module.

  In view of such a problem of foreign matter in the camera module, in Patent Document 1, in the camera module, focusing on the dust generation location and the dust generation process inside the camera module, dust generation itself is prevented and dust is generated in the vicinity of the generation location. There are proposals to try to catch up.

  FIG. 11 is a diagram illustrating a camera module disclosed in Patent Document 1. In FIG.

  The camera module 30a disclosed in this document includes a lens holder 4 that holds an optical structure 3 that forms a subject image, a solid-state image sensor 21 that converts a subject image formed by the optical structure 30b into an electrical signal, And a wiring board 2 on which the solid-state imaging device 21 is placed. The camera module 1 is coated with grease 7 so as to avoid the optical path of the optical structure 30b. Since dust D generated during manufacture and use adheres to the grease 7, image defects due to the dust D can be prevented.

  The optical structure 30b includes a lens portion 32 holding a lens 31 in the center, a lens barrel (lens barrel) 33 holding the lens portion 32, a tension ring 34 for raising and lowering the lens portion 32 by operating the lever 5. have. The optical axis of the lens 31 coincides with the central axis of the lens barrel 33. In FIG. 11, 6 is a translucent lid, 22 is a bonding wire for connecting the wiring board 2 and the solid-state imaging device 21, A and B are spaces, and F is a friction between parts when they come into contact with each other. It is a friction part.

  FIG. 12 is a block diagram showing a solid-state image sensor inspection device disclosed in Patent Document 2. As shown in FIG.

  This Patent Document 2 presents a method of identifying a place where dust (foreign matter) is attached and deleting it if it is a position where dust (foreign matter) can be deleted. In other words, it is judged whether the foreign matter is attached on the transparent cover (outside of the package) or inside (on the inside of the transparent cover or on the device) of the solid-state imaging device package. If it is inside the transparent cover, it will be defective.

  More specifically with reference to FIG. 12, in the inspection apparatus 50, the light emitted from the light source 51 is condensed by the condenser lens 52 on a plane on which the diaphragm 53 is disposed. Here, the diaphragm 53 is disposed at the front focal position of the illumination optical system 54.

  A light beam incident on the illumination optical system 54 and emitted from the illumination optical system 54 passes through the transparent cover 55 and is telecentrically imaged on the imaging surface of the imaging element 56. Thereby, the imaging surface is illuminated uniformly. A drive unit 60 is connected to the drive terminal of the image sensor 56, and when the drive unit 60 electrically drives the pixels of the image sensor 56, an image signal corresponding to the signal charge generated by the illumination light is captured by the image sensor. 56 is output to the outside. An image analysis unit 61 is connected to the signal terminal of the image sensor 56, and an image signal based on the generated signal charge is taken into the image analysis unit 61. Based on this image signal, foreign matter is detected. The electrical inspection of the solid-state imaging device is, for example, detection of non-output pixels or crosstalk inspection between pixels, and is performed by an electrical inspection unit (not shown) based on the above-described image signal.

  Further, a determination unit 62 is connected to the image analysis unit 61, and the determination unit 62 determines where the foreign matter is attached. The attachment location is the outer surface of the transparent cover 55 (illumination optical system 54 side), the inner surface of the transparent cover 55 (imaging element 56 side), and the imaging surface of the imaging element 56.

  In addition to the configuration for determining the presence or absence of foreign matter as described above, a DSP is used for converting the output format and filtering the image when the imaging signal is output as a digital signal to the outside of the camera. (Signal processing circuit) is incorporated. In this DSP, simultaneously with electrical signal processing, pixel defects of a solid-state image sensor (ie, a CMOS / CCD sensor), shadows on an image due to the above-mentioned dust (the image appears to be spotted) and minute Some have built-in functions to correct chipping.

  This correction method roughly consists of two steps: (1) determination of pixel defects and influence of dust (position is movable due to spots and the like) and position detection; and (2) correction of defects and spots by signal processing. . In this technique, the position of dust on the path along the optical axis direction of the lens is detected.

  Further, in the method described in Patent Document 3, a defective pixel is determined based on a signal coming out of the defective pixel. That is, the pixel signal received by the light source outside or inside the camera is compared with a predetermined value, and when the pixel signal is small, it is determined whether or not dust is attached and the position is detected pixel by pixel. The method disclosed in Patent Document 3 is a method for determining dust adhesion while avoiding defective pixels. The technique disclosed in this document is a technique for detecting the position of the solid-state imaging device on the plane.

  This will be specifically described below with reference to FIG.

  FIG. 13 shows a flow of a defective pixel correction process disclosed in Patent Document 3.

  First, in the defective pixel correction process disclosed in Patent Document 3, an image is acquired by photographing (step S301), an image signal is read out for each pixel (step S302), and the read image signal is a defective pixel. It is determined whether or not (step S303). If this image signal is of a defective pixel, it is determined whether or not the image signal of the surrounding pixels is affected by foreign matter adhesion in order to create a correction value for the defective pixel. If it is affected by foreign matter adhesion, the image signal of the defective pixel is corrected without using the image signal affected by foreign matter adhesion (steps S308 and S306). If not affected by the adhesion of foreign matter, the image signal of the defective pixel is corrected by using the image signal of the surrounding pixels by a normal method (step S305). Each time the correction operation for one pixel is completed, it is determined whether the operation for all pixels is completed (step S307), and the correction operation is performed for all pixels.

Patent 4064431 specification JP 2006-19356 A JP 2008-131607 A

  However, there is a huge amount of investment and maintenance in the clean room in the camera module assembly plant (to secure a space that is isolated from the outside world) and in equipment for air circulation (air curtain, air circulation, filtration equipment, cleaning equipment). Even if the camera module is assembled as described above and dust is prevented from being mixed as described above, moving parts of the optical mechanism (autofocus and zoom lens drive) are now built in when the module is used, and dust is generated inside the camera. Therefore, it is no longer sufficient to take measures against image quality degradation due to dust if the cleanliness of the assembling process alone is ensured. In other words, it is necessary not only to increase the cleanliness around the solid-state image sensor inside the camera module (to prevent dust), but also to take measures against the entire optical system including the lens and lid glass. It is only a countermeasure.

  By the way, with respect to Patent Document 1, in reality, when a camera module is incorporated in a mobile device (particularly a mobile phone), for example, an unexpected dust due to a drop impact of the mobile phone or continuous vibration (vibration mode) for a certain period of time. There is a possibility that an adverse effect on the image quality of foreign matter may be manifested due to the occurrence of dust) or the entry of dust (dust) outside the optical path into the optical path.

  These dusts cannot be captured by the grease applied (or injected) to the buffer member, and with this technique alone, there is a possibility that foreign matter will adhere to the imaging portion and appear in the image as black scratches or spots.

  Further, the technique described in Patent Document 2 moves the lens in order to specify the position, and increases or decreases the shadow of dust (foreign material of Patent Document 2) projected on the image sensor. The position of is specified. In the technique disclosed in Patent Document 2, it is necessary to fix the incident method (angle) of the light source, which is the same as Patent Document 3 described below, but measuring the size of dust shadows is the same for all solid-state imaging devices. The pixel elements (or image pixels) must be sequentially scanned at least once.

  In recent years, since the number of pixels of an image sensor has increased (the number of pixel elements increases: 12M = 12,000,000, etc.), it takes time to sequentially scan, but the technique disclosed in Patent Document 3 Since there is no idea that the foreign substance is basically a movable object, the idea is that the scan only needs to be executed once at the time of shipment. For this reason, even if a camera module that incorporates a function that scans an image signal for each pixel to identify the position of dust is incorporated in an electronic device, dust checking is performed when the electronic device is subjected to vibration or impact. In this case, or when the user (user of the portable device) intends to check the dust arbitrarily, it is necessary to wait for the end of the inspection execution with the light source fixed for a long time.

  As described above, in Patent Document 3, as in Patent Document 2, when performing a dust check, it is a problem that it takes too much time to scan individual pixels and compare them with a predetermined value by increasing the number of pixels of the camera. Can be mentioned.

  The present invention has been made in order to solve the above-described problems. The position where foreign matter such as dust generated or invaded inside the camera module is attached to the translucent lid portion of the solid-state imaging device. It is possible to quickly identify the position of a foreign object that affects the image quality in a short time if necessary in the state of use of an electronic device equipped with a camera module, and the deterioration of the image quality due to the adhesion of a foreign object. It is an object of the present invention to obtain a solid-state imaging device that can be improved in use, a camera module equipped with the solid-state imaging device, and an electronic information device using the camera module.

  A solid-state imaging device according to the present invention includes a solid-state imaging device that captures an image of a subject, and a translucent lid attached to the solid-state imaging device so as to cover an imaging region of the solid-state imaging device. And it has the position detection part which detects the position of the foreign material adhering to the surface of this translucent cover part, and the said objective is achieved by it.

  The present invention provides the solid-state imaging device, wherein the position detection unit is formed on the translucent lid, and includes a light-dependent resistance layer in which a resistance of a region irradiated with light changes according to a light irradiation amount. And detecting the position of the foreign matter on the translucent lid based on a local resistance change in the light-dependent resistive layer caused by the shadow of the foreign matter on the light-dependent resistive layer It is preferable that

  According to the present invention, in the solid-state imaging device, the light-dependent resistance layer has a position where the shadow of the foreign matter formed on the light-dependent resistance layer is located locally on the light-dependent resistance layer due to the shadow of the foreign matter. It is preferable to have a predetermined plane pattern so that it can be detected based on a resistance change.

  In the solid-state imaging device according to the aspect of the invention, the light-dependent resistance layer having the planar pattern may include a strip-shaped high-resistance semiconductor layer on the translucent lid, and a horizontal or vertical direction of an imaging region of the solid-state imaging device. It is preferable that a plurality are arranged so as to extend in the direction.

  The present invention provides the solid-state imaging device, wherein the position detection unit includes a first light-dependent resistance layer formed on the translucent lid, and an insulating film on the first light-dependent resistance layer. A second light-dependent resistance layer formed through the first light-dependent resistance layer, wherein the first light-dependent resistance layer has a high-resistance lower-band semiconductor layer parallel to each other on the translucent lid portion. A plurality of the second light-dependent resistance layers are arranged on the light-transmitting lid portion so as to intersect the lower band-shaped semiconductor layer with an insulating film interposed therebetween. It is preferable that a plurality of layers are arranged.

  The present invention provides the solid-state imaging device, wherein the plurality of lower band-shaped semiconductor layers are arranged in parallel with one of a vertical imaging direction and a horizontal direction of a rectangular imaging region of the solid-state imaging element, The layer is preferably arranged in parallel with the other of the rectangular imaging region of the solid-state imaging device in the vertical and horizontal directions.

  In the solid-state imaging device according to the present invention, the arrangement pitch of the plurality of lower band-shaped semiconductor layers and the arrangement pitch of the plurality of upper band-shaped semiconductor layers are the same, and the width of the lower band-shaped semiconductor layer is The width of the upper strip semiconductor layer is preferably the same.

  In the solid-state imaging device according to the present invention, the rectangular imaging region has a horizontally long shape, the arrangement pitch of the plurality of lower band-shaped semiconductor layers, the width of the lower band-shaped semiconductor layer, and the plurality of upper sides The arrangement pitch of the band-shaped semiconductor layers and the width of the upper band-shaped semiconductor layer are such that the number of the plurality of lower band-shaped semiconductor layers is equal to the number of the plurality of upper band-shaped semiconductor layers in the horizontal direction and the vertical direction. It is preferable that it is set.

  According to the present invention, in the solid-state imaging device, pixels arranged in an area behind the foreign substance in the imaging area of the solid-state imaging element based on the position of the foreign substance detected by the position detection unit. It is preferable to have a pixel correction unit that corrects the pixel value.

  According to the present invention, in the solid-state imaging device, the position detection unit has a resistance value changed by a shadow of the foreign matter from among a plurality of strip-shaped high-resistance semiconductor layers arranged on the translucent lid. It is preferable to select a high-resistance semiconductor layer and detect the position of the selected high-resistance semiconductor layer in the horizontal direction or the vertical direction on the imaging region as the position of the foreign matter.

  According to the present invention, in the solid-state imaging device, the position detection unit selects a lower band-shaped semiconductor layer whose resistance value has changed due to the shadow of the foreign substance from the plurality of lower band-shaped semiconductor layers, and The upper band-shaped semiconductor layer whose resistance value has changed due to the shadow of the foreign substance is selected from the upper band-shaped semiconductor layer of the first layer, and the intersection position of the selected lower band-shaped semiconductor layer and the selected upper band-shaped semiconductor layer is defined as the position of the foreign substance. It is preferable to detect as

  In the solid-state imaging device according to the present invention, a pixel located in a region where the high resistance semiconductor layer selected by the position detection unit is arranged is a correction target pixel, and the pixel value of the correction target pixel and the correction target pixel It is preferable to have a pixel correction unit that corrects pixel values of peripheral pixels located in the vicinity of the pixel.

  According to the present invention, in the solid-state imaging device, a pixel located in a region where the lower band-shaped semiconductor layer selected by the position detection unit and the upper band-shaped semiconductor layer selected by the position detection unit overlap is set as a correction target pixel. It is preferable to include a pixel correction unit that corrects the pixel value of the correction target pixel and the pixel values of peripheral pixels located around the correction target pixel.

  A camera module according to the present invention is a camera module in which the above-described solid-state imaging device according to the present invention is stored. The solid-state imaging device is mounted on a substrate, and a lens that holds a condenser lens on the substrate. A holder is attached to cover the solid-state imaging device, thereby achieving the above object.

  A camera module according to the present invention is a camera module storing the above-described solid-state imaging device according to the present invention. The solid-state imaging device is mounted on a substrate and sealed with a sealing resin. A lens holder for holding the condenser lens is attached to the stop resin so as to cover the solid-state imaging device, and thereby the above-described object is achieved.

  An electronic information device according to the present invention is an electronic information device including an image pickup unit that picks up an image of a subject, and the image pickup unit is the above-described camera module according to the present invention, whereby the above object is achieved. The

  Next, the operation of the present invention will be described.

  In the present invention, in a solid-state imaging device including a solid-state imaging device that captures an image of a subject and a translucent lid attached to the solid-state imaging device so as to cover an imaging region of the solid-state imaging device, Since the position detection unit for detecting the position of the foreign matter adhering to the surface of the cover is provided, foreign matter such as dust generated or intruded inside the camera module equipped with the solid-state image pickup device The position attached to the part can be quickly identified, and the position of the foreign matter that affects the image quality can be identified in a short time if necessary in the usage state of the electronic device equipped with the camera module. In addition, it is possible to improve the image quality deterioration due to the adhesion of foreign matter in the use state.

  In the present invention, the position detection unit includes a light-dependent resistance layer whose resistance value changes due to the shadow of a foreign substance, and the light-dependent resistance layer includes a strip-shaped high-resistance semiconductor layer on the translucent lid. Since a plurality of arrays are arranged so as to extend in the horizontal direction or the vertical direction of the imaging region of the solid-state imaging device, the position of the foreign matter can be easily specified as the position in the horizontal direction or the vertical direction of the imaging region. .

  In the present invention, the position detection unit is formed on the light-transmitting lid, and has a first light-dependent resistance layer whose resistance value is changed by the shadow of the foreign matter, and the first light-dependent resistance. And a second light-dependent resistance layer whose resistance value is changed by the shadow of a foreign substance, and the first light-dependent resistance layer includes the light-transmitting lid portion. A plurality of high-resistance lower band-shaped semiconductor layers are arranged in parallel with each other, and the second light-dependent resistance layer is insulated from the lower band-shaped semiconductor layer on the translucent lid. Since a plurality of high-resistance upper band semiconductor layers are arranged so as to cross each other through the film, the position of the foreign matter can be accurately specified on a two-dimensional plane.

  As described above, according to the present invention, it is possible to quickly identify the position where foreign matter such as dust generated or invaded inside the camera module adheres to the translucent lid portion of the solid-state imaging device, The effect of being able to identify the position of a foreign object that affects image quality in a short time as needed in the usage state of an electronic device equipped with a camera module, and to improve the image quality deterioration due to the adhesion of a foreign object in the usage state There is.

1A and 1B are diagrams illustrating a camera module according to Embodiment 1 of the present invention. FIG. 1A illustrates a solid-state imaging device sealed with a lens holder, and FIG. 1B illustrates a solid-state imaging device. The thing using sealing resin for sealing is shown. FIG. 2 is a diagram showing a basic configuration of the solid-state imaging device constituting the camera module according to Embodiment 1 of the present invention. 3A and 3B are diagrams for explaining the solid-state imaging device in the camera module according to Embodiment 1 of the present invention, in which FIG. 3A is a perspective view and FIG. 3B is a cross-sectional view. FIG. 4 is a diagram for explaining the structure of the photoresist portion (position detection portion) in the solid-state imaging device shown in FIG. 3, and FIG. 4A shows the upper and lower photoresist layers and insulating films that constitute the photoresist portion. FIG. 4B is a perspective view showing the external appearance of the photoresistor section. FIG. 5 is a diagram for explaining the operation of the first embodiment of the present invention. FIG. 5 (a) is a diagram for explaining a method for detecting the position of a foreign object using the photoresistor unit shown in FIG. FIG. 5B is a diagram showing the size of the foreign matter. FIG. 6 is an explanatory diagram of Embodiment 1 of the present invention, and shows an example of a connection structure between a lead portion of a photoresist layer formed on transparent glass and an electrode formed on the back surface of the transparent glass. is there. FIG. 7 is an explanatory diagram of Embodiment 1 of the present invention, and shows another example of a connection structure between a lead-out portion of a photoresist formed on transparent glass and an electrode formed on the back surface of the transparent glass. It is. FIG. 8 is a diagram for explaining the structure of the bonding portion of the solid-state imaging device shown in FIG. 3, FIG. 8 (a) shows the arrangement of the bonding portion in the solid-state imaging device, and FIG. 8 (b) shows the connection. The specific structure of the part is shown. 9A and 9B are diagrams for explaining the pads of the solid-state imaging device shown in FIG. 3, FIG. 9A shows the arrangement of the adhesive portions in the solid-state imaging device, and FIG. 9B shows the pads in the solid-state imaging device. FIG. 9C shows a signal processing circuit mounted on the solid-state imaging device. FIG. 10 is a block diagram illustrating a schematic configuration example of an electronic information device using the camera module of the first embodiment as an imaging unit as the second embodiment of the present invention. FIG. 11 is a diagram illustrating a camera module disclosed in Patent Document 1. In FIG. FIG. 12 is a block diagram showing a solid-state image sensor inspection device disclosed in Patent Document 2. As shown in FIG. FIG. 13 shows a flow of a defective pixel correction process disclosed in Patent Document 3.

  First, the basic principle of the present invention will be described.

  The most fatal case is when dust (foreign matter) adheres to the light receiving portion of the solid-state imaging device. In this case, the shadow of the dust immediately appears and a partial omission of an image that becomes a black spot appears in the display image. The light-receiving portion of the solid-state imaging device is provided with a microlens for each pixel on the surface thereof, and since the cross-sectional shape is uneven, it is easy to catch dust, and once dust is attached, it cannot be easily removed.

  Conventionally, as a countermeasure, a transparent glass (quartz, quartz) cover is bonded to a light receiving portion of a solid-state image sensor (CCD image sensor or CMOS image sensor IC chip) to package a solid-state image pickup device. Work at a factory with a high degree of cleanliness (Class 10: 10 pieces of 0.5um trash per foot), and then the assembly of the camera module housing and the incorporation of the lens, etc. There is a method of performing in a low process (Japanese Patent Laid-Open No. 2004-296453).

  With this method, there is a low possibility that dust will be mixed inside the solid-state imaging device package as in Patent Document 2 (Japanese Patent Laid-Open No. 2006-19356), but as described above, dust on the cover surface of the transparent glass, When foreign matter such as dust adheres, it appears in the image as black spots or spots.

  In this case, if the transparent glass cover itself has a function for detecting the presence or position of dust and the position, it is possible to correct the black spots and spots of the image with high accuracy and the subsequent dust removal work and the DSP incorporated in the camera module. Realized at high speed.

  Therefore, in the present invention, paying attention to the fact that foreign matter shadows are formed when dust or foreign matter adheres, a layer composed of a photoresistor whose electrical resistance changes with the amount of light is arranged on a transparent glass in a net-like manner, Foreign matter detection is performed.

  Photoresistors have the property that electrical resistance decreases as the intensity of incident light increases, and are also called light-dependent resistors (LDR), photoconductors, or photocells. .

  The photoresistor is made of a high-resistance semiconductor material. When sufficiently high-frequency light enters the semiconductor, bound electrons jump into the conduction band due to the energy of photons absorbed by the semiconductor. As a result, free electrons (and holes paired therewith) cause a current to flow, resulting in a low electrical resistance.

  In the semiconductor layer (photoresist layer) made of such a high resistance semiconductor material, the portion where light is blocked by foreign matters such as dust becomes high resistance. By detecting this high resistance portion, it is possible to specify the presence and position of foreign matter such as dust.

  In recent years, there is a technology for forming electrodes while keeping transparent glass as transparent as possible by thin film formation technology, that is, transparent electrode formation technology generally used for liquid crystal displays and organic EL (electroluminescence) displays. For the formation of the resistor layer, it is possible to use a technique in which a metal element is formed into a thin film by vapor deposition, CVD (Chemical Vapor Deposition), sputtering or the like and processed into a fine pattern.

  Hereinafter, embodiments will be described with reference to the drawings.

(Embodiment 1)
1A and 1B are diagrams illustrating a camera module according to Embodiment 1 of the present invention. FIG. 1A illustrates a solid-state imaging device sealed with a lens holder, and FIG. 1B illustrates a sealing resin. The solid-state imaging device is used and sealed.

  The configuration of the camera module is roughly divided into a type A camera module 100 shown in FIG. 1A and a type B camera module 100a shown in FIG.

  The camera module according to Embodiment 1 of the present invention may be any type of the camera module.

  For example, the camera module (type A) 100 has a structure in which the solid-state imaging device 1 is incorporated in the camera module in a state where it is exposed as it is.

  That is, in this camera module 100, the solid-state imaging device 1 is mounted on a substrate 101, and a lens holder 20 that holds a condenser lens (hereinafter simply referred to as a lens) 121 is mounted on the substrate 101. An adhesive 102 is attached so as to cover the device 1.

  The camera module (type B) 100a has a structure in which the solid-state imaging device 1 is sealed with a sealing resin 30 with its upper surface exposed and incorporated in the camera module.

  That is, in this camera module 100 a, the solid-state imaging device 1 is mounted on the substrate 101 and sealed with the sealing resin 30. The lens holder 20 a that holds the condenser lens 121 is attached to the sealing resin 30. Is attached by an adhesive 102 a so as to cover the solid-state imaging device 1.

  FIG. 2 is a diagram for explaining the configuration of the solid-state imaging device 1 mounted on the camera module.

  Here, the solid-state imaging device 1 includes a solid-state imaging device 11 that captures an image of a subject, and a protective transparent glass (translucent glass) that is attached to the solid-state imaging device 1 so as to cover an imaging area of the solid-state imaging device. Optical cover) 13 and an adhesive part 12 for adhering the camera module 11 and the transparent glass 13 to each other. As described above, the solid-state imaging device 1 is mounted on the substrate 101, and the solid-state imaging element 11 and the substrate 101 constituting the solid-state imaging device 1 are electrically connected by the bonding wires 14.

  In such a camera module 100 or 100a, the lens 121 and the solid-state imaging device 1 are positioned with high accuracy. Specifically, the alignment between the optical center of the lens 121 and the optical center of the solid-state imaging device, and the distance between the lens and the solid-state imaging device with respect to the focal length of the lens are positioned with high accuracy. In FIG. 1, the camera module is shown with a fixed focus type lens with a fixed lens. However, the camera module includes a zoom mechanism and an AF mechanism in the optical part, and the lens is movable. A focus type may be used.

  In addition, the solid-state imaging device 1 according to the first embodiment includes a position detection unit that detects the position of foreign matter such as dust attached on the transparent glass 13 of the solid-state imaging device 1, and the position detection unit is transparent. A light-dependent resistance layer (hereinafter also referred to as a photoresist layer) 10 that is formed on the glass 13 and in which the resistance of a region irradiated with light changes according to the amount of light irradiation is provided. The position of the foreign matter on the translucent lid is detected based on a local resistance change in the light-dependent resistive layer caused by the shadow of the foreign matter.

  FIG. 3 is a diagram for explaining the solid-state imaging device in the camera module according to Embodiment 1 of the present invention. (FIG. 3B).

  3A and 3B, a pattern of a light-dependent resistance layer (photoresist layer) is formed on the transparent glass 13 of the solid-state imaging device 1.

  FIG. 4 is a diagram for explaining a specific structure of the photoresist layer in the solid-state imaging device shown in FIG. 3, and FIG. 4A is an exploded view of each of the lower and upper photoresist layers. FIG. 4B is a perspective view showing the appearance of the two photoresist layers.

  Here, two layers of the photoresist layer 10 are formed on the transparent glass 13 with an insulating film (not shown) interposed therebetween. That is, the lower photoresistor layer 110 is formed on the transparent glass 13, and the upper photoresistor layer 120 is formed on the lower photoresistor layer 110 via an insulating film.

  The lower photoresistor layer (first light-dependent resistance layer) 110 is formed by arranging a plurality of high-resistance lower strip semiconductor layers 111 on the transparent glass 13 in parallel with each other. The upper photoresist layer (second light-dependent resistance layer) 120 is formed by arranging a plurality of high-resistance upper strip semiconductor layers 121 on the transparent glass 13 so as to be orthogonal to the lower strip semiconductor layer 111. . An insulating film 130 is formed between the lower band-shaped semiconductor layer 111 and the upper band-shaped semiconductor layer 121.

  The lower belt-like semiconductor layer 111 constituting the lower photoresistor layer 110 has a main body portion 111a extending from the center of the transparent glass 13 toward the periphery thereof, and both end portions 111b thereof are electrically connected to the solid-state imaging device 11. It becomes the extended part (electrode terminal) 111b which makes an easy connection. Further, the upper band-shaped semiconductor layer 121 constituting the upper photoresist layer 120 also has a main body portion 121a extending from the center of the transparent glass 13 toward the periphery thereof, and both ends thereof are electrically connected to the solid-state imaging device 11. It becomes the extended part (electrode terminal) 121b which connects.

  FIG. 5 shows the size of the planar pattern of the upper and lower photoresist layers (FIG. 5A) and the size of dust that can be detected (FIG. 5B).

  As shown in FIG. 5, in the plurality of lower band semiconductor layers constituting the lower photodiode layer, the distance between the far sides of the adjacent lower band semiconductor layers is set to 20 μm, and the plurality of the upper photodiode layers are formed. In this upper band-shaped semiconductor layer, the distance between the far sides of the adjacent upper band-shaped semiconductor layers is set to 20 μm, so that the presence or absence of dust having a size of approximately 20 μm or more can be detected and the position can be specified. Here, the X direction is, for example, the horizontal direction of the imaging region of the solid-state imaging device 1, and the Y direction corresponds to the vertical direction of the imaging region of the solid-state imaging device 1. Furthermore, here, the width of the main body portions 111a and 121a of the respective band-shaped semiconductor layers 111 and 121 is 9 μm, the width of the extending portions 111b and 121b at both ends is 3 μm, and the arrangement interval of these band-shaped semiconductor layers is 2 μm. Yes. However, the arrangement interval of the band-shaped semiconductor layers is substantially equal to the total area of the portions where the upper and lower band-shaped semiconductor layers intersect substantially the area of the imaging region of the solid-state imaging device (light receiving area). It is desirable to set it as narrow as possible.

  For example, when foreign matter is attached as shown in FIG. 5, the upper band-shaped semiconductor layer at positions [1] and [2] among the positions [1] to [4] in the Y direction and the position [ It can be seen that the positions [C] and [D] of [A] to [D] have a high resistance with the lower band-shaped semiconductor layer, and the position of dust is the intersection of the lower and upper band-shaped semiconductor layers. .

  As a method for confirming the presence of dust, if there is a band-like semiconductor layer having a high resistance in the Y direction and the X direction at the same time, dust is present at a portion where the belt-like semiconductor layer intersects or in the vicinity thereof.

  For example, when dust adheres to the extended portion of the upper strip semiconductor layer aligned in the Y direction, the lower strip semiconductor layer aligned in the X direction exists on the extended portion of the upper strip semiconductor layer. Therefore, the adhering of dust is not recognized. For this reason, the extended portion of the upper band-shaped semiconductor layer is located outside the imaging region of the solid-state imaging device. Similarly, the extended portion of the lower belt-shaped semiconductor layer is also located outside the imaging region of the solid-state imaging device.

  Further, the lower band-shaped semiconductor layer and the upper band-shaped semiconductor layer do not have high resistance unless their entire width is blocked by dust (unless the light becomes dark).

  As described above, when a plurality of lower band-shaped semiconductor layers 111 and a plurality of upper band-shaped semiconductor layers 121 are arranged on the transparent glass 13 so as to be orthogonal to each other, foreign matters such as dust adhere to the transparent glass 13. The crossing position (crossing portion) of the lower band-shaped semiconductor layer and the upper band-shaped semiconductor layer whose resistance is increased by the shadow of the foreign object can be obtained as the position of the foreign object.

  FIG. 6 is a diagram illustrating an example of a connection structure between the extended portion of the lower band-shaped semiconductor layer formed on the transparent glass 13 and the back electrode formed on the back surface of the transparent glass.

  The extended portion 111b of the lower band-shaped semiconductor layer 111 formed on the transparent glass 13 is connected to the back electrode 111c formed on the back surface of the transparent glass 13 through the through-hole 13a formed in the transparent glass 13. Electrically connected. The connection structure between the extended portion 121b of the upper band-shaped semiconductor layer 121 and the back electrode 111c formed on the back surface of the transparent glass is also formed on the extended portion 111b of the lower band-shaped semiconductor layer 111 and the back surface of the transparent glass. This is the same as the connection structure with the back electrode 111c.

  In addition, the connection structure of the extended part of the strip | belt-shaped semiconductor layer formed on transparent glass, and the back surface electrode formed in the back surface of transparent glass is not restricted to what is shown in FIG. 6, but what is shown in FIG. Good.

  For example, in the connection structure shown in FIG. 7, the extended portion 111 b (or 121 b) of the lower band-shaped semiconductor layer (or upper band-shaped semiconductor layer) formed on the transparent glass 13 is formed on the side surface of the transparent glass 13. It is electrically connected to a back electrode 111c formed on the back surface of the transparent glass 13 through a twisted wiring 111d.

  FIG. 8 is a diagram for explaining the structure of the bonding portion of the solid-state imaging device shown in FIG. 3. FIG. 8A shows the arrangement of the bonding portion 12 in the solid-state imaging device, and FIG. The specific structure of the bonding portion is shown.

  The adhesive portion 12 is obtained by embedding a conductive wire 12b as a conductive member in a resin 12a as an adhesive, and fixes the transparent glass 13 to the solid-state image pickup device (sensor chip) 1 and the back electrode of the transparent glass 13 and the solid electrode. A pad (not shown) of the image sensor (sensor chip) 1 is electrically connected. Here, the resin is an epoxy resin, rubber, silicon rubber, elastomer or the like. In addition, the conductive member is formed by bundling a plurality of thin conductive wires such as copper, silver, or gold as an example. It may be provided with anisotropic conductive properties that show conductivity only in the vertical direction of the portion 12.

  9 is a diagram for explaining the solid-state imaging device shown in FIG. 3. FIG. 9A shows the arrangement of the bonding portions in the solid-state imaging device, and FIG. 9B shows the arrangement of the pads in the solid-state imaging device. FIG. 9C shows a signal processing circuit mounted on the solid-state imaging device.

  As shown in FIG. 9B, an input / output pad 11a for inputting / outputting signals to / from the outside is disposed in the peripheral portion of the solid-state imaging device 11, and an adhesive portion 12 inside the input / output pad 11a is provided. In the bonding region 11c to be bonded, a resistance value measuring pad 11b for measuring the resistance value of each band-shaped semiconductor layer of the lower photoresist layer and the resistance value of each band-shaped semiconductor layer of the upper photoresist layer is arranged. The resistance value measuring pad 11b is connected to the conductive member 12b of the bonding portion 12 described above.

  Further, the solid-state imaging device 11 includes a resistance measuring device 11e that measures the resistance value of the band-shaped semiconductor layer. The resistance measuring instrument 11e may be provided with only one resistance measuring instrument or a plurality of resistance measuring instruments.

  For example, when only one resistance measuring device is provided, the band-shaped semiconductor layers constituting the photoresistor layer are selected one by one and current is applied to measure the voltage at both ends. In addition, when a plurality of resistance measuring devices are provided, a current is simultaneously applied to the plurality of semiconductor strips constituting the photoresistor layer, and the terminal voltages at both ends of each semiconductor strip are detected by the respective resistance measuring devices. Measure.

  In addition, the solid-state imaging device 11 determines whether or not there is foreign matter such as dust attached to the surface of the transparent glass 13 based on the measurement result, and specifies the pixel to be corrected that is behind the foreign matter. A position specifying unit 11f to perform is incorporated. The position specifying unit 11f selects a lower band-shaped semiconductor layer having a resistance value higher than the original resistance value among the plurality of lower band-shaped semiconductor layers, and also selects a resistance value among the plurality of upper band-shaped semiconductor layers. The upper band-shaped semiconductor layer having a resistance value higher than the original resistance value is selected, and the intersection of the selected lower and upper band-shaped semiconductor layers is specified as the position of the foreign matter.

  In the first embodiment, the light-dependent resistance layer 10 including the lower band-shaped semiconductor layer 111 and the upper band-shaped semiconductor layer 112, the resistance measuring device 11e, and the position specifying unit 11f are positions that detect the position of the foreign matter. The position which comprised the detection part 10a and was specified by the position specific | specification part 11f becomes a position (position of a foreign material) detected by the position detection part 10a.

  Furthermore, the solid-state imaging device 11 according to the first embodiment is based on the position of the foreign substance detected by the position detection unit 10a at the intersection of the selected lower and upper band-shaped semiconductor layers in the imaging region of the solid-state imaging device. The pixel correction unit 11g that corrects the pixel value of the arranged pixel is provided. Here, the resistance measuring device 11e, the position specifying unit 11f, and the pixel correcting unit 11g are configured in a DSP (digital signal processor), for example.

  The pixel correction unit 11f uses the pixel located in the region where the band-like photoresist layer detected by the position detection unit 10a is disposed as the correction target pixel, and the pixel value of the correction target pixel and the correction target pixel It is also possible to correct pixel values of peripheral pixels located in the vicinity of the. Here, the range of the peripheral pixels is 2 between the center lines of the two lower band-shaped semiconductor layers located on both sides of the intersection of the selected lower and upper band-shaped semiconductor layers and located on both sides of the intersection. A region sandwiched between the center lines of the two upper band semiconductor layers.

  Next, the operation will be described.

  Also in the camera module of the first embodiment, the subject imaging operation is performed in the same manner as a conventional solid-state imaging device.

  In the camera module 100 according to the first embodiment, an operation for improving image quality degradation due to adhesion of foreign matter by signal processing is performed as necessary.

  The operation for improving the image quality may be started automatically after a strong impact or vibration is applied to a mobile device such as a mobile phone in which the camera module is incorporated. It may be activated by an operator's operation.

  Specifically, in the position detection unit 10 a, the resistance measuring instrument 11 e includes the resistance value of each strip semiconductor layer 111 constituting the lower photoresist layer 110 and the strip semiconductor layer 121 constituting the upper photoresist layer 120. The resistance value is measured, and the position specifying unit 11f detects the lower band-shaped semiconductor layer 111 and the upper band-shaped semiconductor layer 121, which have higher resistance values than the average resistance value of the band-shaped semiconductor layer, and detects the detected lower band-shaped semiconductor. The intersection region of the layer 111 and the upper strip semiconductor layer 121 is specified. The position detection unit 10a detects the specified intersection area as the position of the foreign object.

  Then, based on the position of the foreign object detected by the position detection unit 10a, the pixel correction unit 11g corrects the pixel value.

  For example, the pixel correction unit 11g corrects a pixel value of a pixel arranged in an area behind the foreign object in the imaging area of the solid-state imaging device. Specifically, the pixel correction unit 11g compares a pixel value of a pixel included in an overlap region where the lower strip semiconductor layer 111 having a high resistance value and the upper strip semiconductor layer 121 having a high resistance overlap with a predetermined value. If it is affected by the shadow of the foreign object, the pixel value of the pixel affected by the shadow of the foreign object is set to the value of the foreign object outside the overlap area. The pixel value obtained from the resistance value of a normal pixel that is not affected by the shadow and is not a defective pixel is replaced.

  In other words, after the pixel correction unit 11g detects the position of the foreign object and determines that it is affected by the shadow of the foreign object, any pixel remains in the shadow of the foreign object until the next process is performed. The pixel value of the pixel that is affected by the foreign object and the pixel value of the pixel that is affected by the influence of the foreign object is associated with the pixel value using a table or the like, and the DSP ( It is stored in a storage unit in a digital signal processor.

  Then, when the position of the foreign object is detected and a pixel that is affected by the shadow of the foreign object is determined, the pixel correction unit 11g stores the pixel value of the pixel that is stored that is affected by the shadow of the foreign object. The correspondence relationship indicating which pixel value to replace with is rewritten to a new correspondence relationship.

  As a result, the pixel value of the pixel affected by the shadow of the foreign object is always corrected at the time of imaging with the pixel value of the pixel not affected by the shadow of the foreign object. It is possible to improve the deterioration of the image quality due to the influence of the shade.

  As described above, in this embodiment, the solid-state imaging device 11 that captures an image of a subject, and the transparent glass (translucent lid) 13 attached to the solid-state imaging device so as to cover the imaging region of the solid-state imaging device. Since the camera module storing the solid-state imaging device 1 provided with the position detection unit 10a for detecting the position of the foreign matter attached to the surface of the transparent glass, foreign matter such as dust generated or intruded inside the camera module is provided. The position attached to the transparent glass of the solid-state imaging device can be quickly identified, and the position of the foreign matter that affects the image quality can be determined in a short time if necessary in the usage state of the electronic device equipped with the camera module. The image quality deterioration due to the adhesion of foreign matter can be improved in the usage state.

  In other words, in the first embodiment of the present invention, in order to obtain a captured image free from black scratches and spots by correcting the pixel value of the shadow portion of the foreign object, the IR of the imaging device in the solid-state imaging device is used. Information indicating the presence and position of foreign matter such as dust and dust attached to the protective glass (transparent glass) that also serves as a filter can be obtained immediately with a simple configuration.

  As a result, it is possible to flexibly and quickly reduce black scratches and spot defects that occur when a camera module is distributed to a mobile device manufacturer or end user, and even in a system (mobile device) to which this imaging apparatus is applied, Scratches and spots can be automatically detected and corrected.

  Further, in the first embodiment, a plurality of lower photoresist layers disposed on the transparent glass, and an upper photoresist layer disposed on the plurality of lower photoresist layers via an insulating film so as to be orthogonal thereto. And the intersection of the lower photoresist layer having an increased resistance value and the upper photoresist layer having an increased resistance value is detected as the position of the foreign matter, so that the position of the foreign matter is accurately identified on a two-dimensional plane. be able to.

  In the first embodiment, the upper register layer including a plurality of strip-like semiconductor layers extending in parallel with the horizontal direction of the imaging region of the solid-state imaging device and the vertical direction of the imaging region of the solid-state imaging device are used as the photoresist layer. In this embodiment, the lower photoresist layer including a plurality of strip-like semiconductor layers extending in the direction is shown. However, only one of the upper photoresist layer and the lower photoresist layer may be provided as the photoresist layer.

  In this case, when the band-shaped semiconductor layer whose resistance value has changed due to the shadow of the foreign object is selected, the pixel correction unit determines the position of the selected band-shaped semiconductor layer in the horizontal direction or the vertical direction on the imaging region as the position of the foreign object. Therefore, the position of the foreign object can be easily specified as the position in the horizontal direction or the vertical direction of the imaging region.

  In the first embodiment, the arrangement pitch of the plurality of lower band-shaped semiconductor layers and the arrangement pitch of the plurality of upper band-shaped semiconductor layers are the same, and the width of the lower band-shaped semiconductor layer and the width of the upper band-shaped semiconductor layer The width is the same, but is not limited to this.

  For example, in a solid-state imaging device including an imaging region having a horizontally-long rectangular shape, the arrangement pitch and the width of the lower band-shaped semiconductor layer of the plurality of lower band-shaped semiconductor layers, the arrangement pitch of the plurality of upper band-shaped semiconductor layers and the upper band-shaped semiconductor The width of the layer may be set so that the number of the plurality of lower band-shaped semiconductor layers is equal to the number of the plurality of upper band-shaped semiconductor layers in the horizontal direction and the vertical direction.

Further, although not specifically described in the first embodiment, a digital camera such as a digital video camera or a digital still camera, an image input camera, a scanner, or a facsimile using the camera module of the first embodiment as an imaging unit. An electronic information device having an image input device such as a camera-equipped mobile phone device will be briefly described below.
(Embodiment 2)
FIG. 10 is a block diagram illustrating a schematic configuration example of an electronic information device using the camera module of Embodiment 1 as an imaging unit as Embodiment 2 of the present invention.

  An electronic information device 90 according to the second embodiment of the present invention shown in FIG. 10 includes the camera module according to the first embodiment of the present invention as an image capturing unit 91 that captures an image of a subject. Memory unit 92 such as a recording medium for recording data after high-quality image data obtained by shooting is subjected to predetermined signal processing for recording, and a liquid crystal display screen or the like after this image data is subjected to predetermined signal processing for display A display unit 93 such as a liquid crystal display device displayed on the display screen, a communication unit 94 such as a transmission / reception device that performs communication processing after performing predetermined signal processing for the image data, and printing (printing) the image data. And at least one of an image output unit 95 for outputting (printing out).

  As mentioned above, although this invention has been illustrated using preferable embodiment of this invention, this invention should not be limited and limited to this embodiment. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range based on the description of the present invention and the common general technical knowledge from the description of specific preferred embodiments of the present invention. It is understood that the patent documents cited in the present specification should be incorporated by reference into the present specification in the same manner as the content itself is specifically described in the present specification.

  The present invention, in the field of solid-state imaging device, camera module, and electronic information equipment, the position where foreign matter such as dust generated or entered inside the camera module is attached to the translucent lid of the solid-state imaging device, It is possible to quickly identify the position of the foreign material that affects the image quality in a short time as needed in the usage state of the electronic device equipped with the camera module, and use the image quality deterioration due to the adhesion of the foreign material. The present invention can provide a solid-state imaging device that can be improved in a state, and is useful in technical fields such as a mobile phone with a camera, a digital still camera, and a security camera equipped with a camera module using the solid-state imaging device.

1 Solid-state imaging device 10 Photoresist layer (light-dependent resistance layer)
DESCRIPTION OF SYMBOLS 10a Position detection part 11 Solid-state image sensor 11a Input / output pad 11b Resistance value measurement pad 11c Adhesion area | region 11e Resistance measuring device 11f Position specification part 11g Pixel correction part 12 Adhesion part 12a Resin 12b Conductor 13 Transparent glass (translucent cover part)
13a Through-hole 14 Bonding wire 20, 20a Lens holder 30 Sealing resin 90 Electronic information equipment 91 Imaging unit 92 Memory unit 93 Display unit 94 Communication unit 95 Image output unit 100, 100a Camera module 101 Substrate 121 Condensing lens 102 Adhesive 110 Lower photoresist layer 120 Upper photoresist layer 130 Insulating film 111 Lower strip semiconductor layer 111a, 121a Body portion 111b, 121b Extending portion (electrode terminal)
111c Back electrode 121 Upper strip semiconductor layer

Claims (16)

A solid-state imaging device comprising a solid-state imaging device for imaging a subject and a translucent lid attached to the solid-state imaging device so as to cover an imaging region of the solid-state imaging device,
A solid-state imaging device having a position detection unit that detects the position of a foreign substance attached to the surface of the translucent lid. The solid-state imaging device according to claim 1,
The position detection unit includes a light-dependent resistance layer that is formed on the translucent lid, and the resistance of the region irradiated with light changes according to the amount of light irradiation.
Based on a local resistance change in the light-dependent resistance layer caused by the shadow of the foreign substance on the light-dependent resistance layer, the position of the foreign substance on the translucent lid is detected. Solid-state imaging device. The solid-state imaging device according to claim 2,
The light-dependent resistance layer is detected based on a local change in resistance of the light-dependent resistance layer caused by the shadow of the foreign matter, so that the shadow position of the foreign matter formed in the light-dependent resistance layer is detected. A solid-state imaging device having a predetermined plane pattern. The solid-state imaging device according to claim 3,
The light-dependent resistance layer having the planar pattern is
A solid-state imaging device in which a plurality of strip-like high-resistance semiconductor layers are arranged on the translucent lid so as to extend in the horizontal direction or the vertical direction of the imaging region of the solid-state imaging device. The solid-state imaging device according to claim 1,
The position detection unit includes a first light-dependent resistance layer formed on the translucent lid, and a second light formed on the first light-dependent resistance layer via an insulating film. A dependent resistance layer,
The first light-dependent resistance layer is formed by arranging a plurality of high-resistance lower band-shaped semiconductor layers in parallel with each other on the translucent lid,
The second light-dependent resistance layer is formed by arranging a plurality of high-resistance upper band-shaped semiconductor layers on the translucent lid so as to intersect the lower band-shaped semiconductor layer via an insulating film. A solid-state imaging device. The solid-state imaging device according to claim 5,
The plurality of lower belt-like semiconductor layers are arranged in parallel with one of the vertical and horizontal directions of the rectangular imaging region of the solid-state imaging device,
The solid-state imaging device, wherein the plurality of upper band-shaped semiconductor layers are arranged in parallel with the other of the rectangular imaging region of the solid-state imaging device in the vertical direction and the horizontal direction. The solid-state imaging device according to claim 6,
The arrangement pitch of the plurality of lower band semiconductor layers and the arrangement pitch of the plurality of upper band semiconductor layers are the same, and the width of the lower band semiconductor layer and the width of the upper band semiconductor layer are the same. A solid-state imaging device. The solid-state imaging device according to claim 7,
The rectangular imaging region has a horizontally long shape,
The arrangement pitch of the plurality of lower band-shaped semiconductor layers and the width of the lower band-shaped semiconductor layer, and the arrangement pitch of the plurality of upper band-shaped semiconductor layers and the width of the upper band-shaped semiconductor layer are horizontal and vertical. A solid-state imaging device in which the number of the plurality of lower band-shaped semiconductor layers is set to be equal to the number of the plurality of upper band-shaped semiconductor layers. The solid-state imaging device according to claim 1,
A pixel correction unit configured to correct a pixel value of a pixel arranged in an area behind the foreign object in an imaging region of the solid-state imaging device based on the position of the foreign object detected by the position detection unit; , Solid-state imaging device. The solid-state imaging device according to claim 4,
The position detection unit selects a high-resistance semiconductor layer whose resistance value has changed due to the shadow of the foreign substance from a plurality of strip-shaped high-resistance semiconductor layers arranged on the translucent lid, and the selection A solid-state imaging device that detects the position of the high-resistance semiconductor layer in the horizontal direction or the vertical direction on the imaging region as the position of the foreign matter. The solid-state imaging device according to claim 5,
The position detection unit selects a lower band-shaped semiconductor layer whose resistance value has changed due to the shadow of the foreign substance from the plurality of lower band-shaped semiconductor layers, and includes the plurality of upper band-shaped semiconductor layers, A solid-state imaging device that selects an upper band-shaped semiconductor layer whose resistance value has changed due to the shadow of a foreign object, and detects an intersection position of the selected lower band-shaped semiconductor layer and the selected upper band-shaped semiconductor layer as the position of the foreign object. The solid-state imaging device according to claim 10,
The pixel value of the pixel to be corrected and the pixel value of the peripheral pixel located around the pixel to be corrected are defined as pixels to be corrected that are located in the region where the high resistance semiconductor layer selected by the position detection unit is arranged. A solid-state imaging device having a pixel correction unit that corrects the above. The solid-state imaging device according to claim 11,
The pixel value of the correction target pixel and the correction are determined by setting a pixel located in a region where the lower band-shaped semiconductor layer selected by the position detection unit and the upper band-shaped semiconductor layer selected by the position detection unit overlap. A solid-state imaging device having a pixel correction unit that corrects pixel values of peripheral pixels located around a target pixel. A camera module storing the solid-state imaging device according to claim 1,
The solid-state imaging device is mounted on a substrate, and a lens holder that holds a condenser lens is attached to the substrate so as to cover the solid-state imaging device. A camera module storing the solid-state imaging device according to claim 1,
The solid-state imaging device is mounted on a substrate and sealed with a sealing resin, and a lens holder that holds a condenser lens is attached to the sealing resin so as to cover the solid-state imaging device. ,The camera module. An electronic information device having an imaging unit for imaging a subject,
The electronic information device, wherein the imaging unit is the camera module according to claim 14 or 15.