JP2011165717A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011165717A5 JP2011165717A5 JP2010023461A JP2010023461A JP2011165717A5 JP 2011165717 A5 JP2011165717 A5 JP 2011165717A5 JP 2010023461 A JP2010023461 A JP 2010023461A JP 2010023461 A JP2010023461 A JP 2010023461A JP 2011165717 A5 JP2011165717 A5 JP 2011165717A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- laser beam
- continuous wave
- wave laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Claims (8)
前記薄膜トランジスタ基板製造工程は、
絶縁基板上に非晶質シリコン薄膜を形成する非晶質シリコン薄膜形成工程と、
前記非晶質シリコン薄膜に第１の連続発振レーザ光を照射して、微結晶シリコン膜を形成する微結晶シリコン膜形成工程と、
を有する、ことを特徴とする表示装置の製造方法。 A thin film transistor substrate manufacturing process for manufacturing a thin film transistor substrate,
The thin film transistor substrate manufacturing process includes:
An amorphous silicon thin film forming step of forming an amorphous silicon thin film on an insulating substrate;
Irradiating the amorphous silicon thin film with a first continuous wave laser beam to form a microcrystalline silicon film; and
A method for manufacturing a display device, comprising:
前記第２の連続発振レーザ光の強度は、前記第１の連続発振レーザ光の強度よりも大きく、
前記第２の連続発振レーザ光の走査速度は、前記第１の連続発振レーザ光の走査速度よりも速い、ことを特徴とする請求項３に記載の表示装置の製造方法。 In the crystalline silicon film forming step, a polycrystalline silicon film is formed,
The intensity of the second continuous wave laser beam is greater than the intensity of the first continuous wave laser beam,
The method for manufacturing a display device according to claim 3, wherein a scanning speed of the second continuous wave laser beam is higher than a scanning speed of the first continuous wave laser beam.
前記薄膜トランジスタ基板は、
微結晶シリコン膜により形成された表示領域内の第１薄膜トランジスタと、
前記微結晶シリコン膜の結晶より大きな結晶のシリコン膜により形成された表示領域外の第２薄膜トランジスタと、を有することを特徴とする表示装置。 A display device comprising a thin film transistor substrate,
The thin film transistor substrate is
A first thin film transistor in a display region formed of a microcrystalline silicon film;
And a second thin film transistor outside a display region formed by a silicon film having a crystal larger than the crystal of the microcrystalline silicon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010023461A JP2011165717A (en) | 2010-02-04 | 2010-02-04 | Display device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010023461A JP2011165717A (en) | 2010-02-04 | 2010-02-04 | Display device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011165717A JP2011165717A (en) | 2011-08-25 |
| JP2011165717A5 true JP2011165717A5 (en) | 2013-01-17 |
Family
ID=44596087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010023461A Pending JP2011165717A (en) | 2010-02-04 | 2010-02-04 | Display device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2011165717A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013030885A1 (en) * | 2011-08-30 | 2013-03-07 | パナソニック株式会社 | Thin-film-formation-substrate manufacturing method and thin-film substrate |
| WO2013031198A1 (en) | 2011-08-30 | 2013-03-07 | パナソニック株式会社 | Method for manufacturing thin-film-formation substrate, method for manufacturing thin-film-element substrate, thin-film substrate, and thin-film-element substrate |
| WO2013080252A1 (en) | 2011-11-29 | 2013-06-06 | パナソニック株式会社 | Method for forming crystalline thin film, and method for manufacturing thin film transistor |
| JP6941473B2 (en) * | 2017-04-26 | 2021-09-29 | 株式会社日本製鋼所 | Display manufacturing method, display and LCD TV |
| JP2021034693A (en) * | 2019-08-29 | 2021-03-01 | 株式会社ブイ・テクノロジー | Laser annealing device and formation method of crystallized film |
| WO2021039310A1 (en) * | 2019-08-29 | 2021-03-04 | 株式会社ブイ・テクノロジー | Laser annealing device and laser annealing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4116465B2 (en) * | 2003-02-20 | 2008-07-09 | 株式会社日立製作所 | Panel-type display device, manufacturing method thereof, and manufacturing device |
| JP4413569B2 (en) * | 2003-09-25 | 2010-02-10 | 株式会社 日立ディスプレイズ | Display panel manufacturing method and display panel |
| JP2008053528A (en) * | 2006-08-25 | 2008-03-06 | Hitachi Displays Ltd | Manufacturing method of display device |
| JP2009081383A (en) * | 2007-09-27 | 2009-04-16 | Hitachi Displays Ltd | Display unit equipped with thin-film semiconductor device and manufacturing method of thin-film semiconductor device |
| JP2009218524A (en) * | 2008-03-13 | 2009-09-24 | Hitachi Displays Ltd | Manufacturing method of flat display device, and flat display device |
-
2010
- 2010-02-04 JP JP2010023461A patent/JP2011165717A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011165717A5 (en) | ||
| JP6163270B2 (en) | Method for producing low-temperature polysilicon thin film | |
| JP2010251732A5 (en) | Transistor and display device | |
| JP2009152565A5 (en) | ||
| US20140145199A1 (en) | Array Substrate and Method for Fabricating Array Substrate, and Display Device | |
| TW200501235A (en) | Method of manufacturing an active matrix substrate and an image display device using the same | |
| JP2008235875A5 (en) | ||
| JP2009010365A5 (en) | ||
| JP2012084853A5 (en) | Method of manufacturing semiconductor device, and semiconductor device | |
| WO2016101401A1 (en) | Method for manufacturing low-temperature polycrystalline silicon tft substrate and structure of low-temperature polycrystalline silicon tft substrate | |
| JP2008053394A5 (en) | ||
| CN106128940B (en) | A kind of preparation method of low-temperature polysilicon film | |
| JP2008218862A5 (en) | ||
| JP2009272625A (en) | Image display system and its production process | |
| JP2009048199A5 (en) | ||
| CN104658891B (en) | Preparation method, thin film transistor (TFT) and the display device of low-temperature polysilicon film | |
| JP2009049143A5 (en) | ||
| JP2007134648A5 (en) | ||
| EP2741314A3 (en) | Method of manufacturing a poly-crystalline silicon layer, method of manufacturing an organic light-emitting display apparatus including the same, and organic light-emitting display apparatus manufactured by using the same | |
| JP2008085317A5 (en) | ||
| TW200709352A (en) | A method for forming a thin film transistor, and a method for transforming an amorphous layer into a poly crystal layer or a single crystal layer | |
| KR101259936B1 (en) | Method of manufacturing crystalline semiconductor film | |
| WO2009028843A3 (en) | Method of fabricating solar cell using microwave and apparatus for the same | |
| JP2010087485A5 (en) | Method for manufacturing semiconductor device | |
| WO2009013873A1 (en) | Laminated film manufacturing method, semiconductor device manufacturing method, semiconductor device and display device |