JP2011165454A - Ion beam irradiation method and ion beam irradiation device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an ion beam irradiation method for applying favorable uniform ion beam irradiation to the whole surface of a large substrate while reducing the size of a device and eliminating the need for a divided zone to exist on the substrate, and to provide the ion beam irradiation device. <P>SOLUTION: The ion beam irradiation method includes a first beam irradiation step of changing over an ion beam 4 into a first position 4a using an electromagnet device 50, and then irradiating the substrate 10 with the ion beam while moving it in the direction of intersecting a principal surface 5 of the ion beam 4 to form a first beam irradiation region on the substrate, and a second beam irradiation step of changing over the ion beam 4 into a second position 4b, and then forming a second beam irradiation region on the substrate 10, similarly. In the state that portions of both beam irradiation regions on the substrate 10 are partially overlapped with each other, the whole surface of the substrate is irradiated with the ion beam 4. A beam current density distribution adjusting mechanism 30 is used for flattening ion beam irradiation amount distribution on the overlapped portions. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an ion beam irradiation method and apparatus for irradiating a substrate (for example, a glass substrate for a flat panel display) with an ion beam and performing a process such as ion implantation or ion beam alignment on the substrate. In this method, the substrate is irradiated with a ribbon-like ion beam (which may be called a sheet-like shape or a belt-like shape, the same applies hereinafter) and the substrate is moved in a direction intersecting the main surface of the ion beam. The present invention relates to an ion beam irradiation method and apparatus. This ion beam irradiation method and apparatus is also called an ion implantation method and apparatus when ion implantation is performed on a substrate.

  Several ion beam irradiation apparatuses that perform ion beam irradiation on the entire surface of a substrate by using both a ribbon-like ion beam and substrate driving have been proposed (see, for example, Patent Documents 1 to 3).

  The ion beam irradiation apparatus described in Patent Document 1 extracts a ribbon-like ion beam having a dimension in the long side direction (in other words, in the longitudinal direction, the same applies hereinafter) larger than the corresponding side dimension of the substrate from the ion source, The ion beam is irradiated to the substrate after mass separation through an analysis magnet with a long gap length, and the substrate is driven in a direction intersecting the main surface of the ion beam, thereby performing ion implantation on the entire surface of the substrate. is there.

  In the ion beam irradiation apparatus described in Patent Document 2, two sets of ion sources, analysis electromagnets, and the like are arranged in a vertically different manner so that the positions of two ribbon-like ion beams partially overlap in the long side direction. The dimension of the long side direction of the ion beam applied to the substrate is equivalently larger than that of the ion beam alone extracted from each ion source so that the substrate can be made larger. Is.

  The ion beam irradiation apparatus described in Patent Document 3 uses a ribbon-like ion beam whose dimension in the long side direction is smaller than the dimension of the corresponding side of the substrate, and in addition to driving (scanning) the substrate, the driving Using at least one of changing the position of the substrate in a direction orthogonal to the direction and rotating the substrate, the substrate is irradiated with the ion beam a plurality of times, thereby connecting the plurality of beam irradiation regions to the entire surface of the substrate. Ion beam irradiation is performed. In the surface of the substrate handled by this apparatus, a plurality of cells, which are repeating units of a predetermined processing pattern, are formed with a division band interposed therebetween, and a portion connecting the plurality of beam irradiation regions to the division band is formed. Position.

Japanese Patent Laying-Open No. 2005-327713 (FIGS. 1 to 4) JP 2009-152002 A (FIG. 3) JP 2009-134923 A (FIGS. 7 to 21)

  For example, the substrate tends to be enlarged in order to increase the productivity of a flat panel display. However, in the ion beam irradiation apparatus described in Patent Document 1, the size (length) of the ion beam is equal to the size of the ion source. Therefore, in order to cope with the increase in size of the substrate, there is a problem that the ion source must be enlarged. If an analysis electromagnet is provided, it must also be enlarged. As a result, the entire ion beam irradiation apparatus is increased in size and the structure is complicated. When the size is increased, it may be difficult to install the ion beam irradiation apparatus at a predetermined installation location.

  Although the ion beam irradiation apparatus described in Patent Document 2 can cope with an increase in the size of the substrate, it has a structure in which two sets of ion sources, analysis electromagnets, and the like are arranged in different stages. There is a problem that the entire apparatus becomes larger and the structure becomes complicated.

  Although the ion beam irradiation apparatus described in Patent Document 3 can cope with an increase in the size of a substrate, there is a problem that it can be applied only to a substrate having a divided band in order to use a divided band between cells. is there. In addition to driving (scanning) the substrate, it is necessary to perform at least one of changing the position of the substrate in a direction orthogonal to the driving direction and rotating the substrate, so that the structure of the substrate driving device is complicated. There is also a problem.

  Therefore, the present invention can irradiate the entire surface of a large substrate with an ion beam with good uniformity, can make the apparatus compact, and the substrate does not have a dividing band. The main object is to provide a good ion beam irradiation method and apparatus.

  In the ion beam irradiation method according to the present invention, when two directions orthogonal to each other are an X direction and a Y direction, the substrate is irradiated with a ribbon-like ion beam having a dimension in the Y direction larger than the dimension in the X direction. An excitation current supplied to both electromagnets, comprising first and second electromagnets arranged in series with each other in the path of the ion beam and bending the ion beam in opposite directions in the Y direction. , The position of the ion beam in the Y direction is changed to the first position and the second position of the ion beam in the Y direction while maintaining the ribbon shape. Using an electromagnet device that switches to a position where the vicinity of the ends overlap each other, the electromagnet device switches the ion beam to the first position, and A first beam irradiation step of irradiating the substrate with the ion beam while moving the substrate in a direction intersecting the main surface of the ion beam to form a first beam irradiation region on the substrate, and the electromagnet device The ion beam is switched to the second position by the step of irradiating the substrate with the ion beam while moving the substrate in a direction intersecting the main surface of the ion beam. And a second beam irradiation step for forming a beam irradiation region of the first beam irradiation region in the vicinity of an end portion in the Y direction of the first beam irradiation region and an end of the second beam irradiation region in the Y direction. And the vicinity of the portion are overlapped with each other and an ion beam is irradiated on the entire surface of the substrate, and the beam power in the Y direction of the portion where the ion beams switched to the two positions overlap each other. Using a beam current density distribution adjustment means for adjusting the density distribution is characterized by flattening the ion beam dose distribution of the overlapping portions of the first and second beam-irradiation region.

  According to this ion beam irradiation method, on the substrate, the vicinity of the Y-direction end of the first beam irradiation region and the vicinity of the Y-direction end of the second beam irradiation region are overlaid on the entire surface of the substrate. And the ion beam irradiation amount distribution (for example, dose distribution in the case of ion implantation, the same applies hereinafter) of the overlapped portion is flattened using the beam current density distribution adjusting means. However, ion beam irradiation can be performed on the entire surface with good uniformity.

    Before carrying out the first and second beam irradiation steps, the beam current density distribution in the Y direction of the ion beam at the first position and the beam current density in the Y direction of the ion beam at the second position. Distribution, and using the measured data, simulate the combined beam current density distribution in the Y direction of the ion beam at the first and second positions, and based on the result of the simulation, When the uniformity of the beam current density distribution is worse than a predetermined value, the ion beam switched to the two positions is adjusted using the beam current density distribution adjusting means so that the uniformity is better than a predetermined value. The beam current density distribution in the Y direction in the overlapping portion may be adjusted, and the first and second beam irradiation processes may be performed after the adjustment.

  The ion beam irradiation apparatus according to the present invention is configured to irradiate a substrate with a ribbon-like ion beam having a dimension in the Y direction larger than the dimension in the X direction when the two directions orthogonal to each other are an X direction and a Y direction. An ion beam generator for generating the ribbon-like ion beam, and an ion beam path from the ion beam generator arranged in series with each other so that the ion beams are opposite to each other in the Y direction. The first and second electromagnets that bend to each other, and by reversing the excitation current supplied to both electromagnets, the position of the ion beam in the Y direction is maintained while maintaining the ribbon shape. An electromagnet device that switches between two positions, the position and the second position, and a position where the vicinity of the end in the Y direction of the ion beam at the two positions overlaps each other. And a substrate driving device that holds the substrate and moves the substrate in a direction intersecting the main surface of the ribbon-shaped ion beam on the downstream side of the electromagnet device, and controls the electromagnet device and the substrate driving device. (A) switching the ion beam to the first position, irradiating the substrate with the ion beam while moving the substrate in a direction intersecting the main surface of the ion beam, A first beam irradiation step for forming a first beam irradiation region thereon; and (B) a direction in which the ion beam is switched to the second position and the substrate intersects the main surface of the ion beam. And irradiating the substrate with the ion beam to form a second beam irradiation region on the substrate, and performing the second beam irradiation step on the substrate. A function of superimposing the vicinity of the end of the first beam irradiation region in the Y direction and the vicinity of the end of the second beam irradiation region in the Y direction on the entire surface of the substrate. Adjusting the beam current density distribution in the Y direction of the portion where the ion beams that are switched to the two positions overlap each other to adjust the ion beam in the overlapped portion of the first and second beam irradiation regions A beam current density distribution adjusting means for flattening the irradiation amount distribution is provided.

  According to the first and third aspects of the present invention, the vicinity of the Y-direction end of the first beam irradiation region and the vicinity of the Y-direction end of the second beam irradiation region are superimposed on the substrate. Since the ion beam is irradiated on the entire surface, and the ion beam dose distribution in the overlapped portion is flattened using the beam current density distribution adjusting means, the ion beam is evenly applied to the entire surface even on a large substrate. Irradiation can be performed.

  In addition, since one ion beam is switched by an electromagnet device and used in two beam irradiation steps, only one ion beam generator is required and the size of the ion beam in the Y direction can be reduced. It is not necessary to make the beam generator too large. Therefore, the ion beam irradiation apparatus can be made compact.

  Further, regarding the driving of the substrate, it is only necessary to move the substrate in a direction intersecting the main surface of the ion beam, so that the configuration of the substrate driving device can be simplified.

  Further, since it is not necessary to position the overlapped portion in the divided band, the substrate may not have the divided band, and the alignment of the divided band and the ion beam is not necessary.

  According to invention of Claim 2, 4, there exists the following further effect. That is, since the simulation as described in the claims is performed to adjust the beam current density distribution of the ion beam used in the first and second beam irradiation processes, the ion beam irradiation amount distribution in the overlapped portion is more reliably determined. It is possible to perform ion beam irradiation more uniformly on the entire surface of the substrate.

It is a schematic side view which shows an example of the ion beam irradiation apparatus which enforces the ion beam irradiation method concerning this invention. It is a schematic perspective view which shows an example of a ribbon-shaped ion beam partially. FIG. 2 is a diagram showing the ion beam, the beam current density distribution adjusting mechanism, and the substrate in FIG. 1 as viewed in the traveling direction of the ion beam. It is a figure explaining an example of the ion beam irradiation method using the apparatus shown in FIG. 1, (A) shows the board | substrate after the 1st beam irradiation process, and its ion beam irradiation amount distribution, (B) is 2nd. The substrate after the beam irradiation step and its ion beam dose distribution are shown. It is the schematic which shows an example of the synthetic | combination beam current density distribution of the Y direction of an ion beam. It is the schematic which shows the other example of the beam current density distribution of the synthetic | combination of the Y direction of an ion beam, (A) shows before adjustment of beam current density distribution, (B) shows after adjustment.

(1) Ion Beam Irradiation Method and Apparatus of First Embodiment FIG. 1 shows an example of an ion beam irradiation apparatus that performs an ion beam irradiation method according to the present invention.

  In the following drawings, the traveling direction of the ion beam 4 is always the Z direction, and two directions orthogonal to each other in a plane orthogonal to the Z direction are an X direction and a Y direction. For example, the X direction and the Z direction are horizontal directions, and the Y direction is a vertical direction. Further, in this specification, the case where ions constituting the ion beam 4 are positive ions is described as an example.

With reference to FIGS. 1 and 2, this ion beam irradiation apparatus applies a ribbon-like ion beam 4 having a dimension W _{Y in the} Y direction larger than a dimension W _X in the X direction to the substrate 10 in the vacuum vessel 22. Irradiation is performed to subject the substrate 10 to processes such as ion implantation and ion beam alignment.

  The substrate 10 is a general term for materials to be processed, and is, for example, a glass substrate, a glass substrate with an alignment film, a semiconductor substrate, or another substrate. The planar shape is, for example, a quadrangle, but is not limited thereto.

  In this embodiment, the ion beam irradiation apparatus includes an ion source 2, an analysis electromagnet 6, a substrate driving device 14, a beam monitor 24, a control device 26, a beam current density distribution adjusting mechanism 30, and an electromagnet device 50.

The ion source 2 is an example of an ion beam generator that generates the ribbon-like ion beam 4 as described above. The dimension W _{Y in} the Y direction of the ion beam 4 generated from the ion source 2 may be smaller than the dimension in the Y direction of the substrate 10. In this embodiment, the ion beam 4 extracted from the ion source 2 is irradiated onto the substrate 10 after performing momentum analysis (for example, mass separation) through the analysis electromagnet 6, but it is not necessary to perform the momentum analysis. May not be provided with the analyzing electromagnet 6.

Even if the ion beam 4 has a ribbon shape, it does not mean that the dimension W _{X in the} X direction is as thin as paper or cloth. For example, the dimension W _{X in} the X direction of the ion beam 4 is about 30 mm to 80 mm, and the dimension W _{Y in the} Y direction is about 40 cm to 80 cm. The larger surface of the ion beam 4, that is, the surface along the YZ plane is the main surface 5.

  The electromagnet device 50 is a first electromagnet which is arranged in series with each other in the path of the ion beam 4 from the ion source 2 (if the analysis electromagnet 6 is provided) and bends the ion beam 4 in directions opposite to each other in the Y direction. 51 and a second electromagnet 52, and a DC power supply 53 that supplies an excitation current to both the electromagnets 51 and 52, respectively. The electromagnets 51 and 52 each have a coil, but the illustration of the coil is omitted here in order to simplify the illustration.

  By reversing the directions of excitation currents supplied from the DC power supply 53 to the two electromagnets 51 and 52, the position of the ion beam 4 in the Y direction is maintained at the first position 4a (in this example, while maintaining the ribbon shape). 1 and 2 in the Y direction as indicated by the solid line) and the second position 4b (in this example, the lower side in the Y direction as indicated by the two-dot chain line in FIGS. 1 and 3). In addition, the vicinity of the end in the Y direction of the ion beam 4 at the two positions 4a and 4b overlaps each other (the overlapping portion is indicated by reference numeral 4c).

That is, the ion beam 4 when switched to a first position 4a, both electromagnets 51 and 52 generate respective magnetic fields B _11, B ₂₁ opposite to each other in the path of the ion beam 4, the ion beam 4 second when switching the position 4b are both electromagnets 51 and 52 opposite the direction of the magnetic field B _12, B ₂₂ (both magnetic field B _12, B ₂₂ are opposite to each other), respectively generating the above the path of the ion beam 4. Thereby, the ion beam 4 is moved to the two positions so that the vicinity of the lower end in the Y direction of the ion beam 4 at the first position 4a and the vicinity of the upper end in the Y direction of the ion beam 4 at the second position 4b overlap each other. Switch. It represents the center position in the Y direction of the portion 4c of overlapping the ion beam 4 by the reference numeral Y _c.

  The substrate driving device 14 is provided on the downstream side of the electromagnet device 50. In this embodiment, the substrate driving device 14 holds the substrate 10 and refers to the ribbon shape as indicated by arrows A and C on the downstream side of the electromagnet device 50 with reference to FIG. The ion beam 4 is linearly reciprocated in a direction (for example, the X direction) intersecting the main surface 5 of the ion beam 4. The substrate 10 is held so that the overlapping portion 4c of the ion beam 4 is positioned within the surface of the substrate 10 (for example, near the center in the Y direction).

  More specifically, in this example, the substrate driving device 14 includes a holder 12 that holds the substrate 10 in the above position, and a rectilinear mechanism 18 that reciprocally moves the substrate 10 and the holder 12 as described above. The movement of the rectilinear mechanism 18 is guided by a guide 20 provided in the bottom surface of the vacuum vessel 22. More specifically, in the substrate driving device 14, the rectilinear mechanism 18 constituting the substrate driving device 14 is controlled by a control device 26 in this example. However, the above-described structure of the substrate driving device 14 is merely an example, and other known structures may be adopted.

  In this embodiment, the substrate 10 is irradiated with the ion beam 4 while being moved as described above in a state in which the substrate 10 is stood by the substrate driving device 14 (for example, a state close to vertical). By doing so, it is possible to prevent particles from adhering to the processing surface of the substrate 10. In addition, the footprint of the processing chamber (occupied floor area) and thus the overall footprint of the ion beam irradiation apparatus can be reduced. Of course, instead of the above, the substrate 10 may be irradiated with the ion beam 4 while moving the substrate 10 as described above in a tilted state (for example, a horizontal state).

  The beam current density distribution adjusting mechanism 30 is an example of a beam current density distribution adjusting unit that adjusts the beam current density distribution in the Y direction of the portion 4c where the ion beams 4 switched to the two positions overlap each other.

  In this example, the beam current density distribution adjusting mechanism 30 is also provided between the electromagnet device 50 and the substrate 10, and a movable mask for shaping the vicinity of the overlapping portion 4 c of the ion beam 4. 32, and a mask driving device 34 for reciprocating linearly driving the mask 32 in the X direction (in the direction to move in and out of the overlapping portion 4c of the ion beam 4) as indicated by an arrow F. More specifically, this beam current density distribution adjusting mechanism 30 is controlled by the control device 26 in this example.

In this example, the mask 32 has a triangular shape with a sharp point on the side of the ion beam 4. The mask 32 cuts obliquely by blocking the vicinity of the portion 4 c where the ion beam 4 overlaps, and the Y of the portion 4 c where the ion beam 4 overlaps is cut. The beam current density distribution in the direction can be lowered obliquely, for example, as shown in the beam current density distributions J ₁ and J ₂ shown in FIG. The beam current density distribution J ₁ indicated by a solid line is that of the ion beam 4 at the first position 4a, and the beam current density distribution J ₂ indicated by a two-dot chain line is that of the ion beam 4 at the second position 4b.

  Depending on the shape of the mask 32 and the position of the mask 32 in the X direction, the beam current density distribution of the portion 4c where the ion beam 4 overlaps can be adjusted.

  The beam current density distribution adjusting mechanism 30 may be further developed so as to divide the mask 32 into two in the upper and lower directions in the Y direction and drive each of them in the X direction by a mask driving device. . Furthermore, a configuration in which the mask 32 is driven in the Y direction in addition to the X direction may be employed.

Incidentally, the beam current density distribution in the Y direction of the ion beam 4 is shaped by the mask 32 in the portion located in the plane of the substrate 10 as in the beam current density distributions J ₁ and J ₂ shown in FIG. It is preferable to be as uniform as possible.

The beam monitor 24 receives the ion beam 4 at the two positions 4a and 4b and measures the beam current density distribution in the Y direction of the ion beam 4 at the two positions 4a and 4b irradiated on the substrate 10. For example, beam current density distributions J ₁ and J ₂ as shown in FIG. 1 are measured. The measurement data from the beam monitor 24 is supplied to the control device 26 in this example.

  The beam monitor 24 is preferably disposed close to the substrate 10 and measures the ion beam 4 at a position close to the substrate 10. In this example, the beam monitor 24 is a multipoint beam monitor having a plurality of beam detectors (for example, Faraday cups) arranged in parallel in the Y direction. A structure in which the beam detector moves in the Y direction may be used.

  The function of the control device 26 will be described later.

  Next, a first embodiment of an ion beam irradiation method performed using the ion beam irradiation apparatus as described above will be described with reference to FIGS.

First, the ion beam 4 is switched to the first position 4a by the electromagnet device 50, and the substrate 10 is made to cross the main surface 5 of the ion beam 4 by the substrate driving device 14 as indicated by an arrow A (this example). The first beam irradiation process is performed in which the substrate 10 is irradiated with the ion beam 4 while being moved in the X direction, and the first beam irradiation region 41 is formed on the substrate 10 from one end to the other end in the X direction. To do. As a result, a substrate 10 as shown in FIG. 4A is obtained. The first beam irradiation region 41 is indicated by hatching in the drawing. This hatching does not represent a cross section (the same applies to the beam irradiation region 42). The beam irradiation region 41 is formed by irradiating the substrate 10 with an ion beam 4 having a beam current density distribution J ₁ as shown in FIG. 1, and the ion beam irradiation amount distribution D in the beam irradiation region 41 is formed. ₁ is shown in FIG.

  In this first beam irradiation step, the substrate 10 is moved in the X direction an even number of times (for example, twice, four times, etc.) according to the required ion beam irradiation amount (for example, the dose amount in the case of ion implantation). Alternatively, it may be moved an odd number of times (for example, once, three times, five times, etc.). The same applies to the second beam irradiation step described later. More specifically, when the position of the substrate 10 before the first beam irradiation process is the same as the position of the substrate 10 after the second beam irradiation process, the substrate 10 is moved an even number of times in the first beam irradiation process. When performing, the second beam irradiation process may be moved even times in the same direction as the first process. When moving the odd number of times in the first beam irradiation step, the second beam irradiation step may be moved an odd number of times in the opposite direction to the first step.

Next, the ion beam 4 is switched to the second position 4b by the electromagnet device 50, and the substrate drive device 14 causes the substrate 10 to cross the main surface 5 of the ion beam 4 as indicated by an arrow C (this direction). In the example, a second beam irradiation process is performed in which the substrate 10 is irradiated with the ion beam 4 while being moved in the X direction, and a second beam irradiation region 42 is formed on the substrate 10 from one end to the other end in the X direction. carry out. As a result, a substrate 10 as shown in FIG. 4B is obtained. The beam irradiation region 42 of the substrate 10 is formed by irradiating the substrate 10 with an ion beam 4 having a beam current density distribution J ₂ as shown in FIG. The quantity distribution D ₂ is shown in FIG.

  As described above, a portion of the first beam irradiation region 41 in the Y direction (ie, near the end) and a portion of the second beam irradiation region 42 in the Y direction (ie, near the end) are overlapped on the substrate 10. In combination (the overlapping portion is indicated by reference numeral 43), the entire surface of the substrate 10 is irradiated with the ion beam 4. The overlapping portion 43 and the overlapping portion 4c of the ion beam 2 correspond to each other.

In addition, the ion beam irradiation amount distribution in the overlapping portion 43 is flattened by using the beam current density distribution adjusting mechanism 30 that adjusts the beam current density distribution of the overlapping portion 4c of the ion beam 4. That is, the ion beam irradiation amount distribution is made uniform between the overlapping portion 43 and the beam irradiation regions 41 and 42 on both sides thereof. An example of such a case is shown in FIG. The ion beam irradiation distribution D ₁ is obtained by ion beam irradiation of the beam current density distribution J ₁ , and the ion beam irradiation distribution D ₂ is obtained by ion beam irradiation of the beam current density distribution J _2. Yes, the ion beam irradiation distribution D ₃ is a combination of both ion beam irradiation distributions D ₁ and D ₂ . The ion beam irradiation amount distribution is a dose amount distribution in the case of ion implantation as described above.

  According to this ion beam irradiation method, the vicinity of the end in the Y direction of the first beam irradiation region 41 and the vicinity of the end in the Y direction of the second beam irradiation region 42 are overlapped on the substrate 10. Since the ion beam 4 is irradiated on the entire surface, and the ion beam irradiation amount distribution in the overlapped portion 43 is flattened using the beam current density distribution adjusting mechanism 30, the large substrate 10 is uniform over the entire surface. Ion beam irradiation can be performed well.

  In addition, unlike the technique described in Patent Document 2, one ion beam 4 is switched by an electromagnet device 50 and used in two beam irradiation processes, so that one ion source 2 which is an example of an ion beam generator is used. That's it. In addition, since the size of the ion beam 4 drawn out from the ion source 2 in the Y direction need not be so large, that is, the ion beam 4 is sufficiently uniform to cover the entire region of the substrate 10 in the Y direction with a single ion beam. Since it is not necessary to increase the dimension in the Y direction, it is not necessary to make the ion source 2 too large. Therefore, the ion beam irradiation apparatus can be made compact. Similarly, when the analysis electromagnet 6 is provided as in this embodiment, only one analysis electromagnet 6 is required, and the analysis electromagnet does not have to be so large. Therefore, also in this case, the ion beam irradiation apparatus can be made compact.

  Further, regarding the driving of the substrate 10, unlike the technique described in Patent Document 3, it is only necessary to move the substrate 10 in the direction intersecting the main surface 5 of the ion beam 4. It can be simplified.

  Further, unlike the technique described in Patent Document 3, it is not necessary to position the overlapping portion 43 in the divided band, so that the substrate 10 may not have the divided band, and the divided band, the ion beam, There is no need for alignment.

  The control device 26 constituting the ion beam irradiation device of this embodiment controls the electromagnet device 50 and the substrate driving device 14 to perform the first beam irradiation step and the second beam irradiation step. On the substrate 10, the vicinity of the end of the first beam irradiation region 41 in the Y direction and the vicinity of the end of the second beam irradiation region 42 in the Y direction are overlapped to overlap the ion beam 4 on the entire surface of the substrate 10. It has the function to perform the control which irradiates.

  Therefore, according to the ion beam irradiation apparatus of this embodiment including the control device 26, the ion source 2, the electromagnet device 50, the substrate driving device 14, the beam current density distribution adjusting mechanism 30 and the like, the ion beam The effect similar to the said effect which an irradiation method show | plays is show | played.

(2) Ion beam irradiation method and apparatus according to the second embodiment The ion beam irradiation method and apparatus according to the second embodiment can be simply described before the first and second beam irradiation steps or above. The beam current density distribution of the ion beam is adjusted by simulating the combined beam current density distribution of the ion beam 4 in the Y direction between the first beam irradiation process and the second beam irradiation process. In the following, differences from the ion beam irradiation method and apparatus of the first embodiment will be mainly described.

  In the ion beam irradiation method of this embodiment, the beam current density distribution in the Y direction of the ion beam 4 at the first position 4a and the second position before the first and second beam irradiation steps are performed. The beam current density distribution in the Y direction of the ion beam 4 of 4b is measured using, for example, the beam monitor 24, and using the measured data, the ion beam 4 of the first and second positions 4a and 4b is measured. A composite beam current density distribution in the Y direction is simulated. This simulation is performed by the control device 26, for example.

This will be described with reference to the drawings. The measurement results of the beam current density distribution in the Y direction of the ion beam 4 used in the first and second beam irradiation processes are, for example, the beam current density distribution J ₁ shown in FIG. , J ₂ (this is the same as the beam current density distributions J ₁ and J ₂ shown in FIG. 1), a combined beam obtained by adding both beam current density distributions J ₁ and J _2. obtain a current density distribution J _3. This is the above simulation.

Based on the result of the simulation, when the uniformity of the combined beam current density distribution J ₃ is worse than a predetermined value (for example, about 5%, the same applies hereinafter), the uniformity is improved to a predetermined value or more. As described above, the beam current density distribution adjusting mechanism 30 is used to adjust the beam current density distribution in the Y direction of the portion 4c where the ion beam 4 overlaps.

For example, if the beam current density distribution J ₃ shown in FIG. 5, the uniformity better than a predetermined value, no adjustment is required. For example, as shown in FIG. 6A, the combined beam current density distribution J ₃ is large in the overlapping portion 4c, and when the uniformity of the beam current density distribution J ₃ is worse than a predetermined value, The mask 32 of the current density distribution adjusting mechanism 30 is moved in the direction of entering the ion beam 4 more in the X direction (in short, the left direction in FIG. 3).

By doing so, the vicinity of the overlapping portion 4c of the ion beam 4 is cut more greatly by the mask 32, so that the two beam current density distributions J ₁ and J ₂ overlap each other as shown in FIG. 6B. Becomes smaller and the beam current density distribution becomes smaller. Therefore, by adjusting the movement distance of the mask 32, for example, as shown in FIG. 6 (B), it is possible to improve the uniformity of the beam current density distribution J ₃ Synthesis than a predetermined value.

When the beam current density of the overlapping portion 4c is smaller than the others, the above may be reversed. That is, the mask 32 of the beam current density distribution adjusting mechanism 30 is moved in a direction in which the degree of entering the ion beam 4 is reduced (in short, to the right in FIG. 3). As a result, the area near the overlapping portion 4c of the ion beam 4 is less cut by the mask 32, so that the region where the two beam current density distributions J ₁ and J ₂ overlap each other becomes larger, and the beam current density distribution. Becomes larger. Therefore, by adjusting the movement distance of the mask 32, it is possible to improve the uniformity of the beam current density distribution J ₃ Synthesis than a predetermined value.

  Then, after the adjustment, the first and second beam irradiation steps are performed.

  According to this ion beam irradiation method, the above-described simulation is performed to adjust the beam current density distribution of the ion beam 4 used in the first and second beam irradiation steps, so that the ion beam irradiation of the overlapping portion 43 is performed. The amount distribution can be more reliably flattened, and ion beam irradiation can be performed more uniformly on the entire surface of the substrate 10.

  The control device 26 constituting the ion beam irradiation apparatus of the second embodiment further performs (a) the first and second beam irradiation processes in addition to the functions described above in the case of the first embodiment. Before, the beam monitor 24 measures the beam current density distribution in the Y direction of the ion beam 4 at the first position 4a and the beam current density distribution in the Y direction of the ion beam 4 at the second position 4b. A function; (b) a function of simulating a combined beam current density distribution in the Y direction of the ion beam 4 at the first and second positions 4a and 4b using the measured data; and (c) the simulation. Based on the result of the above, when the uniformity of the combined beam current density distribution is worse than a predetermined value, the beam current density distribution adjusting mechanism 30 is adjusted so that the uniformity becomes better than the predetermined value. A function of adjusting the beam current density distribution in the Y direction of the portion 4c where the ion beams 4 switched to the two positions 4a and 4b overlap with each other; and (d) the first and second beams after the adjustment. And a function of performing an irradiation process.

  Therefore, according to the ion beam irradiation apparatus of this embodiment including the control device 26, the ion source 2, the electromagnet device 50, the substrate driving device 14, the beam monitor 24, the beam current density distribution adjusting mechanism 30, and the like. The effect similar to the said effect which the ion beam irradiation method of the said 2nd Embodiment has is show | played.

  Unlike the above example, simulation and adjustment of the beam current density distribution in the Y direction of the ion beam 4 may be performed between the first beam irradiation step and the second beam irradiation step.

  In that case, the measurement data of the beam current density distribution in the Y direction of the ion beam 4 used in the first beam irradiation step is stored, and the second beam is supplied before the second beam irradiation step. The beam current density distribution in the Y direction of the ion beam 4 used in the irradiation process is measured, and the combined beam current density distribution in the Y direction is simulated using this and the stored data. Then, based on the result of the simulation, when the uniformity of the combined beam current density distribution is worse than a predetermined value, the beam current density distribution adjusting mechanism 30 is adjusted so that the uniformity is better than a predetermined value. Is used to adjust the beam current density distribution of the overlapping portion 4c in the Y direction of the ion beam 4 used in the second beam irradiation step, and the second beam irradiation step is performed after the adjustment.

  Also in this method, since the beam current density distribution of the ion beam 4 is adjusted by performing the simulation as described above, the ion beam irradiation amount distribution of the overlapped portion 43 is more reliably flattened, and the entire surface of the substrate 10 is obtained. Therefore, ion beam irradiation can be performed with good uniformity.

  The control device 26 in this case has a function of simulating and adjusting the beam current density distribution in the Y direction of the ion beam 4 between the first beam irradiation step and the second beam irradiation step. Just make it a thing.

(3) Other Modifications The following modifications can be applied to any of the ion beam irradiation methods and apparatuses of the first and second embodiments.

  As the beam current density distribution adjusting means for adjusting the beam current density distribution in the Y direction of the portion 4c where the ion beams 4 overlap with each other, instead of or in combination with the beam current density distribution adjusting mechanism 30, for example, the above-mentioned patent document A known beam current density distribution adjusting means as described in 1 may be used. That is, the beam current density distribution adjusting means may be a means for controlling (a) the ion source 2 as a multifilament type ion source having a plurality of filaments in the Y direction and controlling the filament current flowing through each filament. (B) A means for controlling a beam current density distribution in the longitudinal direction Y of the ion beam 4 by providing a lens means such as an electric field lens or a magnetic lens in the path of the ion beam 4 may be used. Alternatively, (c) means for providing a plurality of movable shielding plates for shielding the ion beam 4 as in the path of the ion beam 4 and controlling the ion beam 4 as described in JP-A-2007-172927. But it ’s okay. Such a beam current density distribution adjusting means is also controlled by the control device 26, for example.

  The ion beam generator is not limited to the ion source 2 but may have other configurations. For example, a beam collimator (for example, a quadrupole) is extracted after extracting an ion beam spreading (diverging) in a fan shape from a relatively small ion source and performing mass separation through an analysis electromagnet as needed during the divergence. It may be configured to irradiate the substrate 10 after being converted into a ribbon-like ion beam by a device, a beam collimating magnet, or the like (see, for example, JP-A-2006-139996).

2 Ion source (ion beam generator)
4 Ion beam 4a First position 4b Second position 4c Overlapping portion 10 Substrate 14 Substrate driving device 24 Beam monitor 26 Control device 30 Beam current density distribution adjusting mechanism 41 First beam irradiation region 42 Second beam irradiation region 43 Overlapping portion 50 Electromagnet device 51 First electromagnet 52 Second electromagnet

Claims (4)

An ion beam irradiation method of irradiating a substrate with a ribbon-like ion beam having a dimension in the Y direction larger than a dimension in the X direction, assuming that two directions orthogonal to each other are an X direction and a Y direction,
The first and second electromagnets are arranged in series with each other in the path of the ion beam and bend the ion beam in opposite directions in the Y direction, and both excitation currents supplied to both electromagnets are reversed. Thus, the position of the ion beam in the Y direction is maintained at the two positions of the first position and the second position while maintaining the ribbon shape, and the vicinity of the end of the ion beam at the two positions in the Y direction is mutually Using an electromagnet device that switches to the overlapping position,
The ion beam is switched to the first position by the electromagnet device, and the substrate is irradiated with the ion beam while moving the substrate in a direction intersecting the main surface of the ion beam. A first beam irradiation step of forming a first beam irradiation region in
The ion beam is switched to the second position by the electromagnet device, and the substrate is irradiated with the ion beam while moving the substrate in a direction intersecting the main surface of the ion beam. And performing a second beam irradiation step for forming a second beam irradiation region on
A method of irradiating the entire surface of the substrate with an ion beam by superimposing the vicinity of the end in the Y direction of the first beam irradiation region and the vicinity of the end of the second beam irradiation region in the Y direction on the substrate. And
In addition, the overlapped portion of the first and second beam irradiation regions using beam current density distribution adjusting means for adjusting the beam current density distribution in the Y direction of the portion where the ion beams switched to the two positions overlap each other. An ion beam irradiation method characterized by flattening the ion beam irradiation amount distribution. Before carrying out the first and second beam irradiation steps, the beam current density distribution in the Y direction of the ion beam at the first position and the beam current density in the Y direction of the ion beam at the second position. Measuring the distribution and
Using the measured data, the combined beam current density distribution in the Y direction of the ion beam at the first and second positions is simulated,
Based on the result of the simulation, when the uniformity of the combined beam current density distribution is worse than a predetermined value, the beam current density distribution adjusting means is used so that the uniformity is better than a predetermined value. Adjusting the beam current density distribution in the Y direction of the portion where the ion beams switched to the two positions overlap each other,
The ion beam irradiation method according to claim 1, wherein the first and second beam irradiation steps are performed after the adjustment. An ion beam irradiation apparatus that irradiates a substrate with a ribbon-shaped ion beam having a dimension in the Y direction larger than a dimension in the X direction when two directions orthogonal to each other are defined as an X direction and a Y direction.
An ion beam generator for generating the ribbon-like ion beam;
The first and second electromagnets are arranged in series with each other in the path of the ion beam from the ion beam generator and bend the ion beam in opposite directions in the Y direction, and are supplied to both electromagnets. By reversing the excitation current together, the position of the ion beam in the Y direction is changed to the two positions of the first position and the second position while maintaining the ribbon shape, and the Y position of the ion beam at the two positions is maintained. An electromagnet device that switches to a position where the end portions in the direction overlap each other;
A substrate driving device that holds the substrate and moves the substrate in a direction intersecting the main surface of the ribbon-like ion beam on the downstream side of the electromagnet device;
(A) The ion beam is switched to the first position by controlling the electromagnet device and the substrate driving device, and the substrate is moved while moving the substrate in a direction intersecting the main surface of the ion beam. A first beam irradiation step of irradiating the ion beam to form a first beam irradiation region on the substrate; and (B) switching the ion beam to the second position, A second beam irradiation step of forming a second beam irradiation region on the substrate by irradiating the substrate with the ion beam while moving the substrate in a direction intersecting the main surface of the ion beam. Then, on the substrate, the vicinity of the Y-direction end of the first beam irradiation region and the vicinity of the Y-direction end of the second beam irradiation region are overlapped to irradiate the entire surface of the substrate with the ion beam. A control device which has the function of performing control,
The beam current density distribution in the Y direction of the portion where the ion beams switched to the two positions overlap is adjusted to flatten the ion beam dose distribution in the overlapped portion of the first and second beam irradiation regions. An ion beam irradiation apparatus, comprising: A beam monitor for measuring a beam current density distribution in the Y direction of the ion beam at the first and second positions;
The control device further includes: (a) before performing the first and second beam irradiation steps, a beam current density distribution in the Y direction of the ion beam at the first position and the second position at the second position. A function of measuring the beam current density distribution in the Y direction of the ion beam using the beam monitor; and (b) combining the ion beams in the first and second positions in the Y direction using the measured data. (C) Based on the result of the simulation, if the uniformity of the combined beam current density distribution is worse than a predetermined value, the uniformity is better than a predetermined value. The beam current density distribution adjusting means is controlled so that the beam current density distribution in the Y direction of the portion where the ion beams switched to the two positions overlap each other is adjusted. If, (d) an ion beam irradiating apparatus of the implementing said first and second beam irradiation step after the adjustment function and to have claim 3 comprising a.

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