JP2011134790A - Semiconductor laser device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To achieve a frame-package type semiconductor laser device that prevents the occurrence of deterioration in emission end face of a semiconductor laser element. <P>SOLUTION: The semiconductor laser device is configured as follows. A semiconductor laser element 110 is fixed to a die pad 121 of a lead frame 120. An emission end face 111 of the semiconductor laser element 110 is covered with a translucent sealing member 140. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor laser device and a manufacturing method thereof, and more particularly to a semiconductor laser device mounted on a lead frame and a manufacturing method thereof.

  Miniaturization of personal computers, car navigation systems, portable players, and the like equipped with an optical pickup unit has been promoted. These devices are required to be further downsized, and the optical pickup unit is also required to be further downsized.

  Currently, there are three types of optical recording media that are generally used: compact discs (CD) using infrared light, digital versatile discs (DVD) using red light, and high-density optical discs (BD) using blue-violet light. Can be classified. There is a demand for downsizing the pickup unit corresponding to all three types. In order to reduce the size of the pickup unit, it is indispensable to reduce the size of the semiconductor laser device serving as a light source.

  The semiconductor laser device generally uses a can package covered with a cap made of metal or the like. By housing the semiconductor laser element in the can package, it is possible to avoid physical damage to the semiconductor laser element. In addition, since it can be hermetically sealed, for example, after removing the organic substance in the cap, if the semiconductor laser element is hermetically sealed together with dry air or the like in the cap, an effect of suppressing deterioration of the semiconductor laser element can be expected. (For example, see Patent Document 1). However, when the entire inside of the cap is hermetically sealed, it is necessary to join the glass window and the cap with high accuracy. Then, after fixing a glass window and a semiconductor laser element to a submount, filling with a transparent synthetic resin such as silicon so as to cover the semiconductor laser element and sealing it, a method of covering with a cap has also been studied ( For example, see Patent Document 2.)

  The can package is excellent in terms of protecting the semiconductor laser element. However, there is a problem that miniaturization is difficult. For this reason, a non-hermetic frame package in which a semiconductor laser element is mounted on a lead frame has been studied (see, for example, Patent Document 3). By making the semiconductor laser device a non-hermetic frame package, the semiconductor laser device can be greatly reduced in size compared to the can package.

Japanese Patent Laid-Open No. 2004-22918 JP-A-4-320386 JP 2005-354099 A

  However, in the case of a non-hermetic frame package, the emission end face of the semiconductor laser element is exposed, so that there is a problem that the emission end face is likely to deteriorate. In particular, in the case of a blue-violet semiconductor laser element, a blue-violet laser beam having a short wavelength and high energy is emitted, so that organic gases such as hydrocarbons contained in the air are easily decomposed by the emitted light. For this reason, decomposition products of organic gas are likely to be deposited on the emission end face of the semiconductor laser element, and deterioration such as a reduction in output is likely to occur in the semiconductor laser element. Such a problem can occur not only in the semiconductor laser device for blue-violet light but also in the laser device for infrared light and red light.

  An object of the present invention is to solve the above-described problems and to realize a frame package type semiconductor laser device in which the emission end face of the semiconductor laser element is hardly deteriorated.

  In order to achieve the above object, according to the present invention, a semiconductor laser device has a configuration in which an emission end face of a semiconductor laser element mounted on a lead frame is covered with a translucent sealing member.

  Specifically, a semiconductor laser device according to the present invention includes a first semiconductor laser element, a lead frame having a die pad to which the first semiconductor laser element is fixed, and a transparent surface that covers an emission end face of the first semiconductor laser element. And an optical sealing member.

  The semiconductor laser device of the present invention includes a translucent sealing member that covers the emission end face of the first semiconductor laser element. For this reason, even if it is a frame package, it can prevent that the photodegradation material of the organic substance in the air accumulates on the output end surface of a semiconductor element. Therefore, it is possible to realize a semiconductor laser device that is small and has little deterioration of the semiconductor element. In addition, the manufacturing cost can be reduced.

  In the semiconductor laser device of the present invention, the translucent sealing member may be an inorganic silicon compound. By setting it as such a structure, even when the light energy of an emitted light is large, it can suppress that a translucent resin member deteriorates.

  In the semiconductor laser device of the present invention, the translucent sealing member may be an organic filler.

  The semiconductor laser device of the present invention may further include a wire for connecting the first semiconductor laser element and the lead frame, and the translucent sealing member may cover the first semiconductor element and the wire. By setting it as such a structure, a wire can be protected by a translucent sealing member, and a manufacturing process can be simplified.

  In the semiconductor laser device of the present invention, the lead frame may have leads independent from the die pad, and the translucent sealing member may be fixed by insulating the leads from the die pad.

  In the semiconductor laser device of the present invention, the first semiconductor laser element may emit infrared light, emit red light, or emit blue-violet light. Good. Moreover, you may emit the light of two wavelengths, infrared light and red light.

  The semiconductor laser device of the present invention further includes a second semiconductor laser element, and the translucent sealing member covers the emission end face of the first semiconductor laser element and the emission end face of the second semiconductor laser element. May be. With such a configuration, it is possible to reduce the size of the optical pickup corresponding to a plurality of media using light of different wavelengths.

  The semiconductor laser device of the present invention may further include a translucent smoothing member that covers the light emitting surface of the translucent sealing member.

  A method of manufacturing a semiconductor laser device according to the present invention provides a lead frame having a die pad, a first lead connected to the die pad, and a second lead connected to the first lead by a tie bar. A step (a), a step (b) of fixing the semiconductor laser element to the die pad, and connecting the fixed semiconductor laser element and the second lead with a wire; and covering the semiconductor laser element and the wire and the second lead is A step (c) of filling the translucent sealing member so as to be fixed in an insulated state from the die pad, and a step (d) of cutting the tie bar after the step (c).

  According to the manufacturing method of the semiconductor laser device of the present invention, the lead can be fixed and the wire can be protected by the translucent sealing member, so that the manufacturing process can be simplified.

  According to the semiconductor laser device and the manufacturing method thereof according to the present invention, it is possible to realize a frame package type semiconductor laser device in which the emission end face of the semiconductor laser element is hardly deteriorated.

(A) And (b) shows the semiconductor laser device which concerns on one Embodiment, (a) is a top view, (b) is sectional drawing in the Ib-Ib line | wire of (a). (A) And (b) shows the modification of the semiconductor laser apparatus which concerns on one Embodiment, (a) is a top view, (b) is sectional drawing in the IIb-IIb line | wire of (a). (A) And (b) shows the modification of the semiconductor laser apparatus which concerns on one Embodiment, (a) is a top view, (b) is sectional drawing in the IIIb-IIIb line | wire of (a). (A) And (b) shows the modification of the semiconductor laser apparatus which concerns on one Embodiment, (a) is a top view, (b) is sectional drawing in the IVb-IVb line | wire of (a). FIG. 5 is a plan view showing manufacturing steps of the semiconductor laser device shown in FIG. 4 in order of steps. (A) And (b) shows the modification of the semiconductor laser apparatus which concerns on one Embodiment, (a) is a top view, (b) is sectional drawing in the VIb-VIb line | wire of (a). It is a top view which shows the modification of the semiconductor laser apparatus which concerns on one Embodiment. (A) And (b) shows the modification of the semiconductor laser apparatus which concerns on one Embodiment, (a) is a top view, (b) is sectional drawing in the VIIIb-VIIIb line | wire of (a).

  1A and 1B show a semiconductor laser device according to an embodiment, in which FIG. 1A shows a planar configuration and FIG. 1B shows a cross-sectional configuration. As shown in FIG. 1, the semiconductor laser device of this embodiment includes a lead frame 120, a semiconductor laser element 110 mounted on the lead frame 120, a resin frame 130, and a translucent sealing member 140. Yes.

  The lead frame 120 has a die pad 121 on which the semiconductor laser element 110 is mounted, and leads 122. The lead 122 has a lead 122A connected to the die pad 121 and a lead 122B insulated from the die pad 121.

  The semiconductor laser element 110 is a normal semiconductor laser element that emits infrared light, red light, blue-violet light, or the like, in which a semiconductor layer stack including an active layer is formed on a substrate. The semiconductor laser element 110 is fixed to the die pad 121 via a submount 112, for example. In addition, the electrode pads provided on the semiconductor laser element 110 and the submount 112 are connected to the leads 122 via wires 150.

  The resin frame 130 is formed so as to surround the outer edge portion of the die pad 121 except for the end portion opposite to the lead 122. For this reason, the semiconductor laser element 110 is surrounded by the resin frame 130 except for the emission end face side. Further, the thickness of the resin frame 130 is larger than the thickness of the semiconductor laser element 110. In this way, by forming the resin frame 130 so as to surround the semiconductor laser element 110, the possibility of mechanical damage to the semiconductor laser element 110 can be greatly reduced. Further, since the wire 150 does not protrude from the resin frame 130, the wire 150 can be protected. Further, the resin frame 130 also has a function of insulating and fixing the leads 122B from the die pad 121. The resin frame 130 may be a polycarbonate resin or an epoxy resin.

  The translucent sealing member 140 is filled between the resin frames 130 so as to cover at least the emission end face 111 of the semiconductor laser element 110. The translucent sealing member 140 may be made of a material having excellent translucency at the wavelength of the emitted light emitted from the semiconductor laser element 110. For example, in the case of a blue-violet semiconductor laser element, an inorganic material having a bond between silicon (Si) and oxygen (O), such as glass or other silicon oxide, may be used. Alternatively, an organic material having resistance to blue-violet laser light such as a cyclic olefin polymer or copolymer, for example, a copolymer of ethylene and tetracyclododecene may be used. In the case of the semiconductor laser device for infrared light and red light, the same material as that for the semiconductor laser device for blue-violet light may be used, but silicon-based resin such as polysiloxane or other organic resin is used. Is also possible.

  The semiconductor laser device of this embodiment has a translucent sealing member 140 that covers the emission end face 111 of the semiconductor laser element 110. For this reason, although the semiconductor laser device 110 is a frame package that is not completely hermetically sealed, a semiconductor produced by the photolysis product obtained by photodecomposing organic matter in the atmosphere by the emitted light accumulates on the emission end face 111. Deterioration of the laser element 110 can be suppressed. In particular, if the light-transmitting sealing member 140 is formed of an inorganic material or an organic material having resistance to blue-violet laser light, the light-transmitting sealing member 140 of the blue-violet light semiconductor laser device can be used. Photodegradation can be suppressed, and a semiconductor laser device that is stable for a long time can be realized.

  In the semiconductor laser device of this embodiment, the most important emission end face 111 of the semiconductor laser element 110 is covered with a translucent sealing member 140. Therefore, the resin frame 130 does not have to surround the side of the semiconductor laser element 110 as shown in FIG. In this case, the resin frame 130 may be formed so as to cover the boundary portion between the die pad 121 and the lead 122 in order to fix the lead 122B. By doing so, there is an advantage that the semiconductor laser device can be further reduced in size. When the resin frame 130 is formed so as to surround the semiconductor laser element 110, the lead frame 120 needs to be larger than the resin frame 130. On the other hand, since the leads 122 are fixed by the resin frame 130, the size of the resin frame 130 cannot be reduced to a certain extent. Therefore, if the resin frame 130 does not surround the side of the semiconductor laser element 110 as shown in FIG. 2, it intersects with the leads of the semiconductor laser device as compared with the case where the resin frame 130 surrounds the side of the semiconductor laser element 110. It is possible to reduce the width in the direction to be about 10% to 20%.

  The resin frame 130 may cover the wire 150. In this way, the wire 150 can be protected. However, in this case, it is necessary to form the resin frame 130 after performing wire bonding.

  As shown in FIG. The translucent sealing member 140 may cover the entire semiconductor laser element 110 and the wire 150. This further improves the protection effect of the semiconductor laser element 110 and the wire.

  Further, as shown in FIG. 4, the lead 122 may be fixed by a translucent sealing member 140. In this case, as shown in FIG. 5A, the semiconductor laser element 110 is fixed to the die pad 121, the wire 150 is bonded, etc., at least before the tie bar 123 connecting the leads is separated. Subsequently, sealing with a translucent sealing member 140 is performed as shown in FIG. Next, as shown in FIG. 5C, the lead frame 120 is cut off and the tie bar 123 is cut to form a semiconductor laser device.

  The semiconductor laser element 110 may be a two-wavelength laser element. For example, as shown in FIG. 6, if a two-wavelength laser element 113 that emits infrared light and red light is used, a semiconductor laser device that emits laser light having two wavelengths can be obtained. In this case, a pickup corresponding to CD, DVD and BD can be formed by two semiconductor laser devices.

  Further, as shown in FIG. 7, the first semiconductor laser element 110A and the second semiconductor laser element 110B may be combined into one package. In this case, the first semiconductor laser element 110A and the second semiconductor laser element 110B are semiconductor laser elements that emit light of the same wavelength, even if they are semiconductor laser elements that emit light of different wavelengths. Also good. Further, three or more semiconductor laser elements may be combined into one package. For example, if semiconductor laser elements having three wavelengths of infrared light, red light, and blue-violet light are used as one package, a pickup corresponding to CD, DVD, and BD can be formed by one semiconductor laser device. Alternatively, a two-wavelength laser element of infrared light and red light and a blue-violet light semiconductor laser element may be combined.

  As shown in FIG. 8, you may provide the smoothing member 160 which covers the light-projection surface of the translucent sealing member 140. As shown in FIG. What is necessary is just to form a smoothing member with glass etc., for example. By providing the smoothing member 160, the light emission surface of the semiconductor laser device can be made smoother than in the case of only the translucent sealing member 140. Further, if the smoothing member 160 is fixed on the lead frame 120 at a certain distance from the emission end face 111 of the semiconductor laser element 110 and then the translucent sealing member 140 is filled, the semiconductor laser element It is easy to make the distance between the emission end surface 111 of 110 and the light emission surface of the semiconductor laser device constant. Thereby, it is possible to reduce the variation in characteristics between the semiconductor laser devices.

  INDUSTRIAL APPLICABILITY The semiconductor laser device and the manufacturing method thereof according to the present invention can realize a frame package type semiconductor laser device in which the emission end face of the semiconductor laser element is hardly deteriorated, and is used for, for example, a pickup unit used for reading and writing optical disks It is useful as a semiconductor laser device and a manufacturing method thereof.

110 Semiconductor laser device 110A First semiconductor laser device 110B Second semiconductor laser device 111 Emission end face 112 Submount 113 Two-wavelength laser device 120 Lead frame 121 Die pad 122 Lead 122A Lead 122B Lead 123 Tie bar 130 Resin frame 140 Translucent seal Stop member 150 Wire 160 Smoothing member

Claims (10)

A first semiconductor laser element;
A lead frame having a die pad to which the first semiconductor laser element is fixed;
A semiconductor laser device comprising: a light-transmitting sealing member that covers an emission end face of the first semiconductor laser element.   The semiconductor laser device according to claim 1, wherein the translucent sealing member is made of an inorganic silicon compound.   The semiconductor laser device according to claim 1, wherein the translucent sealing member is made of an organic filler. A wire connecting the first semiconductor laser element and the lead frame;
The semiconductor laser device according to claim 1, wherein the translucent sealing member covers the first semiconductor element and the wire. The lead frame has leads independent of the die pad;
The semiconductor laser device according to claim 4, wherein the translucent sealing member fixes the lead insulated from the die pad.   6. The semiconductor laser device according to claim 1, wherein the first semiconductor laser element emits infrared light, red light, or blue-violet light.   The semiconductor laser device according to claim 1, wherein the first semiconductor laser element emits light of two wavelengths, infrared light and red light. A second semiconductor laser element that emits light having a wavelength different from that of the first semiconductor laser element;
The said translucent sealing member covers the output end surface of the said 1st semiconductor laser element, and the output end surface of the said 2nd semiconductor laser element, The any one of Claims 1-7 characterized by the above-mentioned. Semiconductor laser device.   The semiconductor laser device according to claim 1, further comprising a light-transmitting smoothing member that covers a light emitting surface of the light-transmitting sealing member. Preparing a lead frame having a die pad, a first lead connected to the die pad, and a second lead connected to the first lead by a tie bar;
A step (b) of fixing a semiconductor laser element to the die pad, and connecting the fixed semiconductor laser element and the second lead by a wire;
Filling a light-transmitting sealing member so as to cover the semiconductor laser element and the wire and to fix the second lead in a state of being insulated from the die pad;
A method of manufacturing a semiconductor laser device, comprising: a step (d) of cutting the tie bar after the step (c).

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