JP2011119760A - Method of manufacturing semiconductor element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a semiconductor light-emitting device that are improved in luminous efficiency and light extraction efficiency, and to manufacture the semiconductor light-emitting element in good yield by a method of manufacturing the same by suppressing chipping. <P>SOLUTION: The method of manufacturing the semiconductor element includes: a semiconductor forming step of forming a semiconductor on a principal surface of a substrate; and a groove portion-forming step of forming a groove portion on a first principal surface side of the substrate; and a substrate separating step of removing a part of the substrate to open the groove portion on a second principal surface side, and separating the substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device, and more particularly to a nitride semiconductor light emitting device, a method for manufacturing the same, and a semiconductor light emitting device.

  Conventionally, in a nitride semiconductor light emitting device, sapphire is often used for a substrate. However, since sapphire is an insulator, when it is used as a substrate, a part of the semiconductor on the substrate must be exposed and an electrode must be formed thereon (in this case, the element 1 The use area per piece becomes large and it becomes difficult to reduce the cost). In order to reduce the size of the device, a nitride semiconductor light emitting device in which a nitride semiconductor is formed on a Si substrate and an electrode is provided on the back surface of the substrate has been proposed. In Patent Document 1, a p-type nitride semiconductor layer, a light emitting layer, and an n-type nitride semiconductor layer are sequentially stacked on a Si substrate from the Si substrate side, and the Si substrate is removed so as to expose the p-type nitride semiconductor layer. A p-type electrode is formed on the exposed region.

In manufacturing a nitride semiconductor light emitting device, a method is used in which a nitride semiconductor is formed on a substrate, an electrode is provided, and the device is formed. Patent Document 2 discloses a method of providing a separation groove in a semiconductor layer and a substrate and applying a load along the groove as a method for forming an element.
Further, in Patent Documents 3 and 4, the semiconductor layer on the substrate is separated into element sizes, another substrate is bonded to the semiconductor layer side, the original substrate and the semiconductor layer are separated, and then the element shape is obtained. A method of dividing is disclosed.
JP 2003-86839 A JP-A-11-126923 Japanese Patent Laid-Open No. 2004-47918 JP 2004-363532 A

  When an electrode is formed on the back surface of a substrate made of a material different from that of a semiconductor and a current is injected, a high electrical barrier exists between the substrate and the semiconductor (interface). There is a problem that the forward voltage (Vf) is very high and the luminous efficiency is deteriorated. However, when the substrate is partially removed as in the cited document 1, the amount of current flowing through the semiconductor layer above the region where the substrate is removed becomes larger than the amount of current flowing through the semiconductor layer above the region where the substrate is not removed. Since the amount of current flowing depending on the region is biased, it is difficult to obtain uniform light emission over the entire surface of the light emitting layer.

  In addition, when the nitride semiconductor laminated on the Si substrate is made into an element by an external force, chipping is likely to occur, and there is a problem that the yield is lowered because the quality of the obtained chip cut surface is not sufficient. As a method for forming an element, there is a method in which a groove is provided in a semiconductor layer as in Patent Document 2 and the substrate is divided by an external force. Even in this method, chipping of the substrate is a problem. When chipping occurs, a step occurs at the interface between the Si substrate and the semiconductor, and light emitted from the end face of the semiconductor is absorbed by the protruding substrate.

  In Patent Documents 3 and 4, etching is performed in the middle of the semiconductor layer or until the substrate is exposed to separate the semiconductor layer into element sizes, and another substrate is bonded to the semiconductor layer side to remove the growth substrate. . Increasing the number of steps for bonding and removing the substrates causes problems of productivity and yield reduction due to variations in accuracy. In addition, there is a problem in that when the substrate is removed, damage to the semiconductor layer increases and the device characteristics deteriorate.

  Further, in the conventional method of forming an element after providing an electrode on the back surface of the substrate as in the cited document 1, the electrode is formed with an area equal to or smaller than the area of the back surface of the substrate. There was a problem that efficiency decreased and current diffusibility deteriorated. Furthermore, since the Si substrate is non-translucent and absorbs light, there is also a problem that light emitted from the side surface of the semiconductor is absorbed by the substrate and the light extraction efficiency decreases.

  Therefore, an object of the present invention is to provide a semiconductor light-emitting element, a method for manufacturing the same, and a semiconductor light-emitting device that solve the above-described problems.

  The semiconductor light emitting device of the present invention has a semiconductor on a first main surface of a conductive substrate having a first main surface and a second main surface, and has a first electrode on the second main surface. In the semiconductor light emitting device having the semiconductor device, the side surface of the substrate and the side surface of the semiconductor are continuous, or the width of the substrate and the width of the semiconductor are substantially the same, and the first electrode is continuous with the entire surface of the second main surface and the side surface of the substrate. It is characterized by being provided.

  In the semiconductor light emitting device of the present invention, the width on the second main surface side of the substrate is preferably smaller than the width of the semiconductor, the substrate is preferably a Si substrate, and the semiconductor is preferably a nitride. The semiconductor is preferably composed of at least a first conductivity type semiconductor and a second conductivity type semiconductor in order from the substrate side, and the second electrode is formed on the second conductivity type semiconductor. Furthermore, it is preferable that the widths of the semiconductor and the second electrode are substantially the same at the interface between the semiconductor and the second electrode.

  The semiconductor light emitting device of the present invention is a semiconductor light emitting device in which the semiconductor light emitting element of the present invention is mounted, wherein the first electrode side is mounted and light is extracted from the second electrode side.

  A method for manufacturing a semiconductor light emitting device according to the present invention includes a semiconductor forming step of forming a semiconductor on a first main surface of a substrate, and a groove forming step of forming a groove on the first main surface side of the substrate. A substrate separation step is provided in which a part of the substrate is removed and a groove is opened on the second main surface side to separate the substrate.

  In the method for manufacturing a semiconductor light emitting device of the present invention, the groove portion is formed so as to surround the device so as to be in the shape of the semiconductor light emitting device in the substrate separation step, and the width of the substrate and the width of the semiconductor at the interface between the substrate of each device and the semiconductor Are preferably formed to be substantially the same, or formed so that the width of the second main surface side of the substrate of each element is smaller than the width of the semiconductor. Further, the groove is preferably formed by etching.

  Furthermore, the first electrode is formed on the second main surface of the substrate having the opening groove. The first electrode extends in the depth direction at the groove, and the electrode is formed shallower than the thickness of the substrate, or is formed shallower than the thickness of the electrode substrate and the semiconductor of the same conductivity type in contact with the substrate. It is preferable. In the semiconductor formation step, it is preferable that at least a first conductivity type semiconductor and a second conductivity type semiconductor are formed in order from the substrate side, and a second electrode is formed on the second conductivity type semiconductor. . The groove forming step is a step of etching the second electrode in the region where the groove is to be formed, the semiconductor in the stacking direction of the second electrode, and the substrate after the semiconductor forming step.

  In the method for manufacturing a semiconductor light emitting device of the present invention, the substrate is preferably a Si substrate, and the semiconductor is preferably made of a nitride.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor light-emitting device and semiconductor light-emitting device which improved the light emission efficiency and the light extraction efficiency can be provided. In addition, the manufacturing method can suppress the occurrence of chipping and manufacture a semiconductor element with a high yield.

Sectional drawing of the semiconductor light-emitting device which concerns on embodiment of this invention Manufacturing method of semiconductor light emitting device according to embodiments of the present invention Manufacturing method of semiconductor light emitting device according to one embodiment of the present invention Manufacturing method of semiconductor light emitting device according to one embodiment of the present invention Sectional drawing of the semiconductor light-emitting device which concerns on one embodiment of this invention Sectional drawing of the semiconductor light-emitting device which concerns on one embodiment of this invention Manufacturing method of semiconductor light emitting device according to one embodiment of the present invention Sectional drawing of the semiconductor light-emitting device which concerns on one embodiment of this invention

Hereinafter, although this invention is demonstrated, the semiconductor light-emitting device of this invention is not limited to the structure shown by embodiment.
1 and 2 show a semiconductor light emitting device and a method for manufacturing the same according to an embodiment of the present invention.
FIG. 1 shows a configuration of a semiconductor light emitting device according to an embodiment of the present invention. The semiconductor light emitting device includes a semiconductor 20 on a first main surface of a substrate 10 and a second main surface of the substrate. One electrode 30 and a second electrode 40 on a semiconductor are provided, and the first electrode is a semiconductor light emitting element provided continuously on the entire surface of the second main surface and the side surface of the substrate. Each configuration shown in FIG. 1 will be described.

[Substrate 10]
The substrate is preferably a conductive substrate such as Si. Since the present invention does not limit the conductivity type of the substrate, the substrate can be either n-type or p-type.
[Semiconductor 20]
The semiconductor is made of a material different from the substrate such as nitride. The semiconductor has at least a light emitting structure, preferably includes an n-type semiconductor or a p-type semiconductor, and more preferably has a pn junction. Furthermore, an n-type semiconductor and a p-type semiconductor can be included, and a structure having an active layer between the n-type semiconductor and the p-type semiconductor can be employed. In the present invention, the semiconductor may have a structure without an active layer. In this case, light is emitted at the interface between the n-type semiconductor and the p-type semiconductor to form a light emitting region.
[Electrodes 30, 40]
As the electrode material, at least one or more kinds of metals can be appropriately selected in accordance with the semiconductor material, and an alloy, a laminated structure, a compound thereof, or the like can be used. When a III-V group material is used for the semiconductor, it is preferable to use Ni / Au, ITO (indium tin oxide) or the like as the positive electrode and W / Al, Ti / Al, or the like as the negative electrode. In the present invention, the positive electrode may be the first electrode, the negative electrode may be the second electrode, the negative electrode may be the first electrode, and the positive electrode may be the second electrode.

  FIG. 2 shows a method for manufacturing the semiconductor light emitting device according to the first embodiment of the present invention, in which a semiconductor forming step (FIG. 2A), a groove forming step (FIG. 2B), And a substrate separation step (FIG. 2C). Each step will be described below.

(Semiconductor formation process)
A semiconductor 20 is formed on the first main surface of the substrate 10 (FIG. 2A). At least the conductive substrate and the substrate are composed of different conductive semiconductors. Specifically, a p-type semiconductor is formed on an n-type substrate, or an n-type semiconductor is formed on a p-type substrate. The semiconductor is preferably composed of an n-type semiconductor and a p-type semiconductor. When the semiconductor is composed of an n-type semiconductor and a p-type semiconductor, the substrate may be conductive or non-conductive, but preferably uses a conductive substrate, in which case the conductivity type of the substrate can be arbitrarily selected, The same applies to the conductivity type of the semiconductor layer stacked thereon. The conductivity type of the substrate and the semiconductor in contact with the substrate may be the same or different conductivity types. That is, an n-type semiconductor is formed as a first conductivity type semiconductor on an n-type substrate and a p-type semiconductor is formed as a second conductivity type semiconductor. As a first conductivity-type semiconductor on an n-type substrate. It is conceivable to form a p-type semiconductor and form an n-type semiconductor as the second conductivity type semiconductor. The same applies to the case where the substrate is p-type. In each embodiment, an active layer can be formed between the first conductivity type semiconductor and the second conductivity type semiconductor. In addition, a buffer layer or the like can be provided as appropriate between the substrate and the semiconductor. By providing the buffer layer, a semiconductor can be formed with good crystallinity and an element with good electrical characteristics can be obtained.

(Groove formation process)
The groove part 50 is formed in the 1st main surface side of a board | substrate (FIG.2 (b)). Before the substrate separation step is performed after the semiconductor 20 is formed on the substrate, a groove is formed on the first main surface side of the substrate. At this time, a groove portion can be freely formed to partition and separate the substrate into a desired shape, and a striped groove portion is formed so that the substrate 10 has a bar shape, or an arbitrary partition is formed. A groove part can be formed, or a groove part can be formed so that it may become a desired element shape.
At this time, the groove is formed deeper than the electrode formation planned position at the depth of the second main surface 60 of the substrate from the semiconductor side. The depth of the groove may be deeper than the surface on which the electrode to be formed on the second main surface of the substrate is formed, preferably 50 μm or more, more preferably 80 μm or more from the interface between the substrate and the semiconductor. As a result, the problem that a part of the substrate is not separated in the wafer surface can be prevented, and the substrate can be separated with a high yield. The depth may be constant or may not be constant.

  Examples of the method for forming the groove 50 include etching (dry etching, wet etching), scribe (cutter scribe, laser scribe, etc.) or dicing. When formed using a scriber, the semiconductor and the substrate are different in hardness, so that the substrate does not break and the substrate protrudes. When formed using etching, the width of the groove can be controlled to about 5 μm. Therefore, by reducing the width of the groove, the area to be removed is reduced, and the number of elements taken from a single wafer is reduced. Can be more. Among them, RIE (reactive ion etching) using a mask is preferable. The reason is that the element shape can be freely determined by the mask pattern, so that the shape is complicated or matched to the shape of the mounting part. An element shape can also be used, which is preferable. In the present invention, since the element shape is not particularly limited, the element shape when viewed from above can be a rectangle, a circle, a triangle, a hexagon, a parallelogram, a rhombus, or the like. Further, it is preferable that the element shape when viewed from above is a hexagonal shape or a circular shape because current tends to flow uniformly over the entire element. In addition, when the shape of the element when viewed from above is circular, it is preferable because light can be extracted uniformly from the side surface. When the element shape when viewed from above is a rectangle, triangle, hexagon, parallelogram, or rhombus, the light emitting area can be increased, which is preferable. When the shape of the element when viewed from the top is a hexagon, it is most preferable because a current can flow uniformly through the entire element and a light emitting area can be increased. Further, the elements can be densely arranged on one wafer as shown in FIG. FIG. 2B is a cross-sectional view taken along the line AA ′ at this time. Furthermore, there is an advantage that an element having a good light distribution characteristic can be obtained.

  Further, by selecting the etching conditions for forming the groove 50, the side surface of the groove is perpendicular to the main surface of the substrate (vertical surface) or the surface is inclined with respect to the main surface of the substrate (inclined surface). The side surface of the groove, that is, the end surface of the semiconductor light emitting element can be arbitrarily formed. Thereby, the width of the semiconductor and the substrate can be controlled, and the end face shape of the element can be arbitrarily changed. Etching conditions include the gas material of the etching gas, the gas flow rate, and in the case of a mixed gas, the mixing ratio of each gas, the atmospheric pressure, the mask shape, and the plasma conditions. Etching conditions for obtaining the end face can be set. In addition, depending on the etching conditions, the etched surface of the substrate or semiconductor can have a rounded shape with no corners, thereby preventing chipping and element cracking when separating the substrate. Further, a smooth surface can be obtained by etching, and the second main surface side can be firmly mounted when mounted on a mounting substrate or a circuit substrate.

  For example, by making the width of the groove portion 50 constant, that is, by making the side surface of the groove portion a vertical surface, the end surface of the element is formed as a continuous surface of the substrate and the semiconductor. Can be formed to be substantially the same. As a result, an element having an end face where the substrate and the semiconductor are continuous as shown in FIG. 1 can be formed. Conventionally, there is a step where the substrate protrudes at the interface between the substrate and the semiconductor, and light absorption occurs at the protruding portion of the substrate. I was able to prevent it. Furthermore, since the element has a stable shape, it is stable and preferable at the time of mounting. In Cited Document 1, since the substrate is removed, the area where the semiconductor and the substrate are in contact with each other is small. However, when the substrate is formed as shown in FIG. 1, the area where the substrate and the semiconductor are in contact with each other is increased.

  Further, the width of the groove 50 is initially small when etching from the semiconductor side and large when formed on the substrate, that is, the substrate is formed so that the width of the substrate is smaller than the width of the semiconductor. It is also possible to form such that the width on the second main surface side is smaller than the width of the semiconductor. In this case, two-stage etching is performed by changing the gas flow rate by etching with weak anisotropy using a mixed gas. At this time, by setting the semiconductor to preferable etching conditions, the width of the groove portion of the semiconductor can be reduced, the area where the semiconductor is removed can be reduced, and the light emitting area can be increased. Thus, as shown in FIGS. 5 and 6, the side surface of the substrate and the side surface of the semiconductor are continuous, and an element in which the width of the second main surface side of the substrate is smaller than the width of the semiconductor can be obtained. Thus, as compared with an element having an end face where a substrate and a semiconductor are continuous, the size of the light emitting portion remains the same, and light absorption by the substrate can be further suppressed.

  In this case, the area of the second main surface of the substrate is smaller than that of the other embodiments when the width of the substrate is narrowed near the interface between the substrate and the semiconductor as shown in FIGS. Therefore, when mounting the second main surface side, the area required for mounting the element can be reduced, and precise mounting is preferable. Compared to the case of FIG. 5, the width of the substrate and the semiconductor is substantially the same in the vicinity of the interface between the substrate and the semiconductor, and the width of the substrate is narrowed on the second main surface side of the substrate. This is preferable because current can be uniformly injected from the substrate to the semiconductor, and an element having good current diffusivity can be obtained. In FIG. 5, the side surface of the substrate continuous with the second main surface is a surface substantially perpendicular to the second main surface, but the side surface of the substrate continuous with the second main surface is the first side as shown in FIG. 2 may be a surface inclined toward the main surface side, and such a configuration is preferable because the electrode can be formed with a uniform thickness.

(Substrate separation process)
A part of the substrate is removed and a groove is opened on the second main surface side of the substrate to separate the substrate (FIG. 2C). Specifically, after forming a groove deeper than the second main surface from the first main surface side of the substrate, the thickness of the substrate 10 is reduced with the semiconductor side held by a holding member such as an adhesive sheet 70. Then, the second main surface 60 facing the first main surface is exposed, and the substrate is separated by opening the groove 50 on the second main surface side of the substrate. Thereby, a board | substrate can be isolate | separated, without applying external force locally. Furthermore, by reducing the thickness of the substrate, an element with good heat dissipation can be obtained. In addition, the center of gravity of the element is stable, which is preferable for easy mounting. As another method, a mask may be provided on the second main surface side of the substrate, and the substrate may be separated by etching the substrate until the groove is reached to open the groove.

  As a method for exposing the second main surface of the substrate, methods such as polishing and etching can be used. By selecting one method, the time required for the process can be shortened and the process can be simplified. it can. In addition, it is preferable to perform RIE (reactive ion etching) after polishing because a smooth surface suitable for forming an electrode provided on the second main surface of the substrate can be formed. Furthermore, when the second main surface side of the element is mounted on a mounting board or a circuit board, the element is firmly mounted, and chip breakage, chipping, and the like can be prevented. When etching is used, the width of the second main surface side of the substrate is smaller than the width of the semiconductor, and the semiconductor can be exposed when viewed from the second main surface side of the substrate. Such an element is preferable because the light extraction efficiency can be increased. Furthermore, by selecting the etching conditions, the Si substrate can be formed into a rounded shape with no corners, and when the second main surface side is mounted on a mounting substrate or a circuit board, it can be firmly mounted. This is preferable.

  Further, in the element in which the width of the second main surface side of the substrate is smaller than the width of the semiconductor as shown in FIGS. 5 and 6, the width of the groove portion in the substrate is formed larger than the width of the groove portion in the semiconductor. Impurities that are sometimes generated and deposited in the trenches can be easily removed, and the electrodes can be easily formed in the subsequent electrode formation step.

  At this time, the substrate is not necessarily separated into elements, but in the substrate separation step, the substrate is separated by forming a bar shape or forming an arbitrary section as described above. A step of forming an element may be provided separately. For example, the substrate may be separated into bars by exposing the second main surface, and further formed into an element by a scriber or the like.

(Electrode formation process)
After the substrate separation step, the first electrode 30 can be formed on the second main surface of the substrate 10 while holding the semiconductor side (FIG. 7). The first electrode extends in the depth direction at the groove portion while maintaining the opening state of the groove portion on the second main surface side. At this time, the region for forming the electrode is not particularly limited and can be arbitrarily formed. However, the electrode is preferably formed on the entire surface of the second main surface and extends in the depth direction at the groove. Thereby, current injection efficiency is improved, current diffusibility is improved, and Vf can be lowered. In addition, since the electrode is formed after the substrate separation step, the electrode can be formed in the groove, and the electrode can be continuously formed on the second main surface and the side surface of the element continuous with the second main surface. . At this time, the electrode is formed shallower than the thickness of the substrate separated into the element shape in the substrate separation step. Alternatively, the electrode is formed shallower than the thickness of the substrate separated into the element shape and the semiconductor of the same conductivity type in contact with the substrate. Forming the electrode by forming the groove narrowly so that the electrode does not contact different conductivity type semiconductors can prevent the first electrode from contacting and shorting to the different conductivity type semiconductor. Further, the current injection efficiency can be improved by increasing the area of the electrode in contact with the substrate. Furthermore, when the electrode is formed on the side surface, the light emitted from the side surface of the semiconductor is reflected by the electrode on the side surface because the light reflected by the external factors such as the package is reflected, so that the light is not absorbed by the substrate. An element with improved extraction can be obtained. In addition, it is preferable to form the electrode by this method because the electrode is formed after the semiconductor is separated, so that the electrode can be easily formed on the entire second main surface of the substrate regardless of the shape of the element.

  In addition, the first electrode is not necessarily formed before the substrate is separated. After the first electrode is provided on the substrate, a mask is provided on the second main surface side of the substrate via the electrode to reach the groove. It is also possible to etch the electrodes and the substrate until the grooves are opened (separate the substrate). Alternatively, the first electrode having a shape having an opening can be formed, and the substrate in the opening can be etched to open the groove (separate the substrate).

  In addition, the second electrode 40 can be formed on the semiconductor after the semiconductor 20 is formed on the substrate. At this time, the region for forming the electrode is not particularly limited and can be arbitrarily formed. However, it is preferably formed over the entire surface of the semiconductor from the viewpoint of current diffusion. Moreover, when forming a groove part in a semiconductor and a board | substrate, a groove part may be formed before providing a 2nd electrode, and a groove part may be formed after forming a 2nd electrode. When the second electrode is formed of a conductive oxide film, the second electrode can be processed simultaneously with the semiconductor and the substrate when the groove is formed by RIE, and the width of the semiconductor and the second electrode as shown in FIG. Are substantially the same. Thereby, the process can be simplified, and an element having a larger electrode area than that of FIG. 1 can be obtained, which is preferable. In addition, it is preferable that the second electrode is provided at least before separating the substrate so that the electrode can be easily provided on the semiconductor. Moreover, when the semiconductor side is held by a holding member such as an adhesive sheet in the above-described substrate separation step, it can be held without being peeled off, and can be manufactured with high yield.

  Further, when the semiconductor light emitting device obtained by mounting the first electrode side of the semiconductor light emitting element obtained as described above and extracting light from the second electrode side is large, the area of the first electrode is large. The area in contact with the joining member such as the adhesive to be used is increased, and the adhesion between the element and the mounting board or circuit board is preferably improved.

Specific examples of the nitride semiconductor light emitting device of the present invention are shown below. However, the present invention is not limited to this.
Example 1
When the semiconductor light emitting device shown in FIG. 1 is manufactured, first, a Si substrate 10 is set in a MOCVD (metal organic chemical vapor deposition) reactor, and a semiconductor 20 made of an n-type semiconductor, an active layer, and a p-type semiconductor. Are sequentially stacked. Subsequently, a Ni / Au positive electrode 40 with a film thickness of 300 nm is formed on almost the entire surface of the p-type semiconductor in the uppermost layer, and a pad electrode made of Au for bonding is formed on a part of the positive electrode. (Not shown) is formed with a film thickness of 0.5 μm. Next, a protective film made of SiN is formed on the entire surface of the wafer. Next, using a photolithography technique, an opening having a width of 20 μm is provided so that the element size becomes 150 μm square, and a resist pattern is formed. Form. The protective film in the region of the opening is etched with CHF3 gas using RIE. Next, the resist pattern is removed with a stripping solution. Next, RIE is performed using SiCl4 gas for the ITO electrode and the nitride semiconductor, and SF6 gas for the Si substrate, and 100 μm from the interface between the semiconductor and the substrate deeper than the formation position of the negative electrode formed on the back surface of the substrate. Etching is performed up to this point to form the groove 50. Thereafter, the protective film is removed with hydrofluoric acid. Next, the semiconductor side is temporarily fixed by the pressure-sensitive adhesive sheet 70, and the second main surface 60 as the negative electrode forming position is exposed by polishing the Si substrate. As a result, the groove is opened on the second main surface side of the substrate, and the substrate is separated into elements in a state where the semiconductor side of the wafer is fixed. Further, the electrode formation surface is smoothed by performing RIE on the second main surface of the substrate. Next, the negative electrode 30 containing Ti and Al is formed on the second main surface of the substrate and in the groove, and is continuously formed on the entire surface and side surfaces of the second main surface of the Si substrate.

(Example 2)
In Example 1, instead of polishing the Si substrate when exposing the second main surface, the Si substrate is removed by etching using SF 6 gas. Otherwise, it is formed in the same manner as in Example 1. In the semiconductor light emitting device of Example 2, the time required for the process was shortened compared with Example 1, and the productivity could be improved.
As a modification of Example 2, the width of the semiconductor is larger than the width of the substrate, and the semiconductor is exposed when viewed from the second main surface side of the substrate. At this time, the width of the groove was formed so that the semiconductor side was 20 μm and the substrate side was 40 μm. In this case, an element having improved light extraction efficiency could be obtained. In addition, the Si substrate has a rounded shape with no corners. In particular, the second main surface side of the Si substrate has a rounded shape, so that the second main surface side is mounted on a mounting board or a circuit board. When implemented firmly.

(Example 3)
When the semiconductor light emitting device shown in FIG. 4 is formed, a resist pattern is formed so as to form a hexagonal shape with a side of 75 μm when the groove portion 50 is formed. Otherwise, it is formed in the same manner as in Example 1. In the semiconductor light emitting device of Example 3, an element having better light distribution characteristics than that of Example 1 was obtained.

  The present invention can be applied to all semiconductor elements, but is particularly suitable for nitride-based semiconductor elements.

10. Substrate 20. Semiconductor 30. First electrode 40. Second electrode 50. Groove 60. Second main surface 70. Adhesive sheet

Claims (10)

A semiconductor forming step of forming a semiconductor on the first main surface of the substrate;
A groove forming step of forming a groove on the first main surface side of the substrate,
A method of manufacturing a semiconductor device, comprising: a substrate separation step of removing a part of the substrate and separating the substrate by opening the groove on the second main surface side. The groove is formed so as to surround the element so as to be in the shape of the semiconductor light emitting element in the substrate separation step, and the width of the substrate and the width of the semiconductor are substantially the same at the interface between the substrate and the semiconductor of each element. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is formed. The groove is formed so as to surround the element so as to be in the shape of the semiconductor light emitting element in the substrate separation step, and is formed so that the width of the second main surface side of the substrate of each element is smaller than the width of the semiconductor. The method for manufacturing a semiconductor device according to claim 1, wherein: The method for manufacturing a semiconductor device according to claim 1, wherein the groove is formed by etching. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the first electrode is formed on a second main surface of the substrate having the opening groove. 6. 6. The method of manufacturing a semiconductor device according to claim 5, wherein the first electrode extends in the depth direction at the groove, and the electrode is formed to be shallower than the thickness of the substrate. The said 1st electrode is extended in the depth direction in the said groove part, This electrode is formed shallower than the thickness of the semiconductor of the same conductivity type which contact | connects the said board | substrate and this board | substrate. A method for manufacturing a semiconductor device. In the semiconductor forming step, at least a first conductivity type semiconductor and a second conductivity type semiconductor are formed in order from the substrate side, and a second electrode is formed on the second conductivity type semiconductor. A method for manufacturing a semiconductor device according to any one of claims 1 to 7. 9. The groove forming step is a step of etching the second electrode in a region where the groove is to be formed, the semiconductor in the stacking direction of the second electrode, and the substrate after the semiconductor forming step. The manufacturing method of the semiconductor element of description. The method for manufacturing a semiconductor device according to claim 1, wherein the substrate is a Si substrate, and the semiconductor is made of nitride.

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