JP2011114087A - Thin-film production method and thin-film element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin-film production method capable of producing a thin film having a stable quality at a low cost. <P>SOLUTION: The thin-film production method has a disposing process for disposing a substrate 20 in a raw material solution of a thin film to be formed on the substrate 20 and a first forming process for forming a thin film on a first main face 20a of the substrate 20 by irradiating a first light having a wavelength by which a light absorbing rate of a solvent in the raw material solution becomes a predetermined threshold value or more from a first light source 13 and by irradiating a second light having a wavelength by which a light absorbing rate of the solvent becomes lower than that of the first light by the solvent from a second light source 14. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a thin film manufacturing method and a thin film element.

  Conventionally, a chemical solution deposition method (CSD method) is known as a method for forming a thin film such as a piezoelectric element. In the CSD method, a raw material solution is applied on a substrate and dried to form a thin film on the substrate surface. For example, Patent Document 1 discloses a method for forming a dielectric thin film using a metal oxide precursor solution containing a metal oxide precursor and a dye.

  However, in the CSD method, a very large labor is required in the coating and drying process of the metal oxide precursor solution, resulting in high costs. Furthermore, the drying process has a problem that the thin film is easily cracked.

  The present invention has been made in view of the above, and an object of the present invention is to provide a thin film manufacturing method and a thin film element capable of manufacturing a thin film of stable quality at low cost.

  In order to solve the above-described problems and achieve the object, the present invention is a method for manufacturing a thin film, wherein the substrate is disposed in a raw material solution of a thin film to be formed on the first main surface of the substrate; The first light source emits first light having a wavelength at which the light absorptance of the solvent in the raw material solution is equal to or greater than a predetermined threshold value, and the light absorptance of the solvent is compared with the first light from the second light source. A first forming step of forming the thin film on the first main surface of the substrate by irradiating the second light having a low wavelength.

  According to another aspect of the present invention, there is provided a thin film element, the disposing step of disposing the substrate in a thin film raw material solution formed on the first main surface of the substrate, and a first light source in the raw material solution. The first light having a wavelength at which the light absorption rate of the solvent is equal to or greater than a predetermined threshold is irradiated, and the second light having a wavelength lower than that of the first light is emitted from the second light source. The thin film increased by a thin film forming method having a first forming step of forming the thin film on the first main surface of the substrate by irradiation is used.

  ADVANTAGE OF THE INVENTION According to this invention, the thin film manufacturing method and thin film element which can manufacture the thin film of the stable quality at low cost can be provided.

FIG. 1 is a diagram for explaining a thin film manufacturing method according to a first embodiment of the present invention. FIG. 2 is a diagram showing the thin film pattern 30. FIG. 3 is a diagram for explaining the irradiation positions of the laser light from the first light source 13 and the second light source 14. FIG. 4 is a diagram for explaining a first modification of the first embodiment. FIG. 5 is a diagram for explaining a method of irradiating laser light from the substrate 20 side. FIG. 6 is a diagram for explaining the thin film manufacturing method according to the second embodiment. FIG. 7 is a diagram showing a multilayer film formed by the thin film manufacturing method according to the second embodiment.

(First embodiment)
FIG. 1 is a diagram for explaining a thin film manufacturing method according to a first embodiment of the present invention. In the present embodiment, a thin film manufacturing method for a thin film used for a piezoelectric element will be described as an example. As shown in FIG. 1, a holding table 11 is installed in a reaction vessel 10, and a substrate 20 on which a thin film is formed is arranged on the holding table 11. As the substrate 20, for example, a silicon substrate can be used. An electrode layer 40 is formed on the first main surface 20 a of the substrate 20. For the electrode layer 40, for example, platinum (Pt), a light-transmitting lanthanum nickel oxide, strontium ruthenium oxide, or the like can be used, and is formed by a sputtering method or the like. The electrode layer 40 may be laminated on the substrate 20 in a patterned state. As another example, the substrate 20 that does not have the electrode layer 40 may be used.

  The reaction vessel 10 is filled with a metal oxide precursor solution 12. A first light source 13 and a second light source 14 are installed on the first main surface side of the electrode layer 40, that is, above the reaction vessel 10. The first light source 13 and the second light source 14 irradiate laser light from above the metal oxide precursor solution 12. The 1st light source 13 makes the solvent of the metal oxide precursor solution 12 an irradiation position, and heats a solvent directly. The 2nd light source 14 makes the 1st main surface 40a of the electrode layer 40 an irradiation position, and heats the metal oxide precursor solution 12 indirectly by heating the board | substrate 20. As shown in FIG. That is, the second light source 14 indirectly heats the metal oxide precursor solution 12.

  It should be noted that the position of the first main surface 40a of the electrode layer 40 is the metal oxide precursor to such an extent that the vertical position between the irradiation position and the position where the thin film on the first main surface 40a is formed in direct heating does not occur. The substrate 20 is arranged so as to be a relatively shallow position of the body solution 12.

  The first light source 13 irradiates laser light having a wavelength at which the light absorption rate of the main solvent of the metal oxide precursor solution 12 is equal to or greater than a predetermined threshold value. Preferably, laser light having a wavelength with the highest light absorption rate of the main solvent is irradiated. In the present embodiment, an ethanol-based organic solvent is used as the main solvent of the metal oxide precursor solution 12, and a wavelength of 400 nm or less having a high light absorption rate of the main solvent is selected as the wavelength of the first light source 13. .

  On the other hand, the second light source 14 emits laser light having a wavelength lower than that of the light emitted from the first light source 13 in the light absorption rate of the main solvent of the metal oxide precursor solution 12. Preferably, laser light having a wavelength at which the light absorption rate of the main solvent is less than the threshold value is irradiated. More preferably, laser light having a wavelength with the lowest light absorption rate of the main solvent and the highest light absorption rate of the electrode layer 40 is irradiated. Specifically, a wavelength of 400 nm or more is selected. In the present embodiment, the second light source 14 emits laser light having a wavelength of 1064 nm. The light emitted from the first light source 13 and the second light source 14 is not limited to laser light.

  It is assumed that the first light source 13 and the second light source 14 can irradiate laser light at positions corresponding to the respective positions on the first main surface 40a of the electrode layer 40. Thereby, the thin film pattern 30 can be formed at a desired position on the first main surface 40 a of the electrode layer 40.

  Furthermore, in the present embodiment, the first light source 13 is set so that the depth from the surface of the metal oxide precursor solution 12 to the first main surface 40a of the electrode layer 40 is equal to the light transmission depth of the first light source 13. To control. Specifically, the depth from the surface of the metal oxide precursor solution 12 to the first main surface 40a of the electrode layer 40 and the light transmission depth of the first light source 13 were set to about 10 μm.

  Under the above conditions, the first light source 13 and the second light source 14 irradiate a laser beam at an irradiation position where a thin film is formed at an arbitrary position of the electrode layer 40, as shown in FIG. On the first main surface 40a of the layer 40, the metal oxide amorphous or metal oxide crystal thin film pattern 30 obtained from the metal oxide precursor at a position corresponding to the irradiation position of the two laser beams, that is, the metal oxide A thin film is formed. Note that the irradiation timings of the first light source 13 and the second light source 14 may be the same or different.

  Thus, the required maximum output of the two light sources can be lowered by using the two laser beams in combination. As a result, the overall equipment cost can be kept low. In this embodiment, the output of the first light source 13 and the second light source 14 can be reduced to 20% or less by using two light sources.

FIG. 3 is a diagram for explaining the irradiation positions of the laser light from the first light source 13 and the second light source 14. As the irradiation position of the laser beam from the first light source 13, that is, the irradiation position of direct heating, 2 of the surface 12 a of the metal oxide precursor solution 12 and the solution 12 b of the metal oxide precursor solution 12 shown in FIG. A street is possible. As the irradiation position of the laser light from the second light source 14, that is, the irradiation position of indirect heating, the first main surface 40a of the electrode layer 40, the inside 20c of the substrate 20, and the first main surface of the substrate 20 shown in FIG. Three kinds of the second main surface 20b which is the back surface of 20a are possible. Here, the inside 20 c of the substrate 20 includes the inside of the electrode layer 40. Any of the two irradiation positions of the first light source 13 and the three irradiation positions of the second light source 14 may be combined. Table 1 shows each irradiation position and its effect.

  In Case A, the water surface of the metal oxide precursor solution 12 is set as an irradiation position, that is, a heating position. In this case, the light energy is absorbed in the metal oxide precursor solution 12 and does not reach the substrate 20. In Case B, the metal oxide precursor solution 12 is heated. The light energy in this case is absorbed in the metal oxide precursor solution 12.

  In Case C, the boundary surface between the metal oxide precursor solution 12 and the substrate 20, that is, the first main surface 20a of the substrate 20 is set as the heating position. In case D, the inside 20c of the substrate 20 is the heating position. In case E, the 2nd main surface 20b of the board | substrate 20 is made into a heating position. In cases C, D, and E, light energy passes through the metal oxide precursor solution 12 and is absorbed by the substrate 20. The solution reaction mode of cases C, D, and E is indirect heating of the metal oxide precursor solution 12 by heating the substrate 20.

  For thin film formation (a) with less impurities, direct heating cases A and B are excellent. In cases A and B, the light energy can directly break the bond between carbon and oxygen in the metal oxide precursor solution 12. For this reason, residual carbon and soot are hardly generated. Therefore, a high-quality thin film free from impurities can be manufactured. On the other hand, in cases C, D, and E, incomplete thermal decomposition of the metal oxide precursor solution 12 easily occurs due to indirect heating. For this reason, the generation of residual carbon and soot becomes a problem.

  Cases A and B are also excellent in damage (b) to the substrate 20. In cases A and B, since light energy hardly reaches the substrate 20, damage to the substrate 20 can be kept low. On the other hand, in cases C, D, and E, since the substrate 20 is heated, the substrate 20 may be thermally damaged.

  Cases C, D, and E are excellent for the adhesion (c) of the substrate thin film. In cases C, D, and E, the phase of the solution is changed in the vicinity of the first main surface 20a of the substrate 20, so that the adhesion between the substrate 20 and the thin film can be enhanced. On the other hand, in cases A and B, the phase change is caused by the surface 12a of the metal oxide precursor solution 12 or the solution 12b of the metal oxide precursor solution 12, so that the adhesion between the substrate 20 and the thin film is relatively low.

  Cases A and B are excellent for high-precision and high-resolution patterning (d). In cases A and B, high-precision and high-resolution patterning according to the light energy spot diameter is possible. On the other hand, cases C, D, and E are inferior to cases A and B because the heating region may be larger than the light energy spot diameter due to the thermal characteristics of substrate 20.

In all cases, the selectivity (e) of the substrate material is excellent. As the substrate 20, for example, a silicon substrate can be used. As for the light source (f), in cases A and B, the irradiated light has a wavelength as low as 400 nm or less, and it is necessary to use an expensive and highly difficult apparatus such as a UV laser. On the other hand, since the light irradiated in cases C, D, and E has a long wavelength of 400 nm or longer, it is relatively inexpensive, such as a CO ₂ laser, and a device that has generally been used for processing is generally used. Can do.

  As described above, direct heating and indirect heating have different advantages, and the advantages of both can be obtained by combining direct heating and indirect heating as in the present application. Specifically, for example, while suppressing the generation of residual carbon and soot by direct heating (see Table 1 “a”), the adhesion to the first main surface 40 a is increased by indirect heating (Table 1 “c”). be able to.

  The steps other than immersing the substrate in the metal oxide precursor solution are the same as those in the conventional sol-gel thin film formation process, and the metal oxide precursor solution is also attached to the substrate in the sol-gel method. This is the same as the metal oxide precursor solution.

  After the thin film is formed in the metal oxide precursor solution 12, when the substrate 20 is taken out of the metal oxide precursor solution 12, ultrasonic cleaning or rinsing cleaning with a solvent is performed. As the solvent, a solvent which is relatively volatile and has a small amount of water in the liquid is preferable. Specifically, acetone, ethanol, IPA, or the like can be used. As a result, the metal alkoxide in the metal oxide precursor solution 12 can be prevented from remaining on the substrate.

  Further, after the cleaning, heat treatment is appropriately performed depending on the state of the formed thin film (mainly the difference in crystal form). When the thin film is a crystal, a heating step of 3 to 10 minutes is performed at a temperature that does not change the crystal form in the sense of drying. The heating temperature is, for example, about 100 to 150 ° C. The atmosphere is usually an air atmosphere. However, an appropriate atmosphere is used as appropriate depending on the properties of the thin film. For example, when the thin film has deliquescence, an inert gas atmosphere with little residual moisture is used. In addition, when the thin film is amorphous, some materials, such as a piezo material, do not exhibit a function unless they are crystallized. In the case of such a material, a heating step for crystallization is performed. Although the heating temperature and time depend on the material, in the case of PZT, the heating is generally performed at 600 to 800 ° C. for 1 to 10 minutes.

  Specifically, as the metal oxide precursor, a substance capable of forming a metal oxide thin film, that is, a substance capable of forming a metal oxide amorphous or metal oxide crystal can be used. Specific examples include metal alkoxides, β-diketonate complexes, metal complexes such as metal chelates, and metal carboxylic acid salts. As the solvent, an ethanol-based organic solvent can be used.

Examples of the metal alkoxide include Si, Ge, Ga, As, Sb, Bi, V, Na, Ba, Sr, Ca, La, Ti, Ta, Zr, Cu, Fe, W, Co, Mg, Zn, Ni, and Nb. , Pb, Li, K, Sn, Al, Sm, and other metal alkoxides. Furthermore, a metal alkoxide having an alkoxyl group such as OCH ₃ , OC ₂ H ₅ , OC ₃ H ₇ , OC ₄ H ₉ , OC ₂ H ₄ OCH ₃ can be used.

  As the β-diketonate complex, for example, metal and acetylacetone, benzoylacetone, benzoyltrifluoroacetone, benzoyldifluoroacetone, benzoylfluoroacetone, or the like can be used.

  Examples of the metal carboxylate include barium acetate, copper (II) acetate, lithium acetate, magnesium acetate, lead acetate, barium oxalate, calcium oxalate, copper (II) oxalate, magnesium oxalate, and tin oxalate ( II) and the like can be used. As the solvent, an alcohol-based organic solvent can be used. The concentration of the solution is desirably 0.1 to 1 mol / l, and more desirably 0.3 to 0.7 mol / l. The upper limit of the concentration is a value defined from the viewpoint of liquid stability. The lower limit of the concentration is a value defined by the deposition rate of the thin film.

  In the present embodiment, since the laser beam is irradiated with the substrate 20 immersed in the metal oxide precursor solution 12, a thin film is formed only on the portion irradiated with the laser beam. Accordingly, it is possible to eliminate the process of attaching and drying the metal oxide precursor solution and the process of dry etching or wet etching for removing the metal oxide precursor in the conventional sol-gel method. These processes are very costly processes, and in the thin film manufacturing method according to the present embodiment, by eliminating these processes, a significant cost reduction can be realized.

  Furthermore, since the film formation reaction is performed in the metal oxide precursor solution 12, the metal oxide precursor solution 12 is always supplied during the film formation reaction, and cracks are hardly generated in the thin film.

  The thin film formed by the thin film manufacturing method according to the present embodiment can be used for, for example, an ultrasonic piezoelectric element, a nonvolatile memory FET element, an actuator element, and the like. The actuator element is used for a recording head of an ink jet printer, for example.

  FIG. 4 is a diagram for explaining a first modification of the first embodiment. In the first modification, the first light source 13 and the second light source 14 are arranged on the second main surface 20b side which is the back surface of the first main surface 20a of the substrate 20. As shown in FIG. 4, in the present embodiment, the first light source 13 and the second light source 14 are disposed on the second main surface 20b side of the substrate 20, and laser light is emitted from the second main surface 20b side. Irradiate. Also in this case, a thin film is formed on the first main surface 20a by heating in the vicinity of the first main surface 40a of the metal oxide precursor solution 12 or the electrode layer 40, as in the thin film manufacturing method according to the first embodiment. It is formed. The substrate 20, the electrode layer 40, the holding table 11, and the reaction vessel 10 are made of a material that transmits light from the first light source 13 and the second light source 14.

The irradiation position of the laser beam from the first light source 13, that is, the irradiation position of the direct heating, is the surface 12a of the metal oxide precursor solution 12 described with reference to FIG. 3 in the first embodiment, the metal oxide precursor. Three ways are possible in the solution 12b of the body solution 12 and on the first major surface 40a of the electrode layer 40. The irradiation position of the laser beam from the second light source 14, that is, the irradiation position of indirect heating, is the second main surface that is the back surface of the inside 20c of the substrate 20 and the first main surface 20a of the substrate 20 described with reference to FIG. Two ways 20b are possible. Table 2 shows each irradiation position and its effect.

  In cases F, G, and H, light energy passes through the substrate 20 and is absorbed by the metal oxide precursor solution 12. The solution reaction form is direct heating. In cases I and J, light energy is absorbed by the substrate 20. The solution reaction form is indirect heating.

  For thin film formation (a) with less impurities, direct heating cases F, G, and H are excellent. However, in the case H, before reaching the first main surface 40a of the electrode layer 40, a part of the laser light may be absorbed by the metal oxide precursor solution 12 to generate impurities. In this respect, it is inferior to cases F and G.

  Regarding the damage (b) to the substrate 20, in cases F, G, and H, when the laser light passes through the substrate 20, a part of the light energy is converted into thermal energy, which may cause damage to the substrate 20. is there. For this reason, although inferior to cases A and B described in the first embodiment, it is superior to cases I and J.

  Regarding the adhesion (c) of the substrate thin film, cases H, I, and J in which the phase is changed near the interface of the substrate 20 are excellent. For high-precision and high-resolution patterns (d), direct heating cases F, G, and H are excellent. The substrate material selectivity (e) is excellent in cases I and J where the substrate 20 is heated, but inferior in cases F, G and H. This is because the light energy needs to pass through the substrate 20 and the selectivity of the substrate material becomes low.

  Regarding the light source (f), the cases F, G, and H require expensive and highly difficult-to-handle devices with high wavelengths, while the cases I and J are relatively inexpensive and generally used for processing. It is possible to use a low-wavelength device that has been used for a long time.

  Thus, instead of irradiating the laser beam from the metal oxide precursor solution 12 side, the thin film is formed on the first main surface of the electrode layer 40 by irradiating the laser beam from the substrate 20 side. Also good.

  Furthermore, the method of irradiating laser light from the substrate 20 side is not limited to the method shown in FIG. As shown in FIG. 5, the substrate 20 may be disposed on the metal oxide precursor solution 12. The substrate 20 is placed so that the first main surface 40 a of the electrode layer 40 faces the bottom surface of the reaction vessel 12 and is in contact with the metal oxide precursor solution 12. The second main surface 20 b of the substrate 20 is located on the metal oxide precursor solution 12. Further, the substrate 20 is fixed on the metal oxide precursor solution 12 by the fixing member 15. The 1st light source 13 and the 2nd light source 14 are arrange | positioned at the 2nd main surface 20b side, and irradiate a laser beam from the 2nd main surface 20b side.

  As another example, the first light source 13 may be irradiated from the first main surface 40 a side of the electrode layer 40, and the second light source 14 may be irradiated from the second main surface 20 b side of the substrate 20. As another example, the second light source 14 may be irradiated from the first main surface 40 a of the electrode layer 40, and the first light source 13 may be irradiated from the second main surface 20 b side of the substrate 20.

(Second Embodiment)
Next, a thin film forming method according to the second embodiment will be described. In the second embodiment, as shown in FIG. 6, a multilayer film is formed to increase the film thickness. Specifically, after the first thin film 31 is formed on the electrode layer 40, the first thin film 31 is continuously irradiated with laser light from the first light source 13 and the second light source 14, as shown in FIG. A second thin film 32 is formed thereon. Here, the thickness of each thin film is preferably 0.1 μm or less, and the total thickness of the multilayer film is preferably 0.5 to several μm.

  In addition, when forming the 2nd thin film 32, the output of the 1st light source 13 and the 2nd light source 14 is made into conditions different from the case where the 1st thin film 31 is formed. Specifically, when the second thin film 32 is formed, the output of the first light source 13 is decreased and the output of the second light source 14 is increased compared to the case where the first thin film 31 is formed. The depths of focus of the first light source 13 and the second light source 14 are changed so that the second thin film 32 is formed on the first main surface 31a of the first thin film 31.

  The laser light emitted from the second light source 14 passes through the metal oxide precursor solution 12, the thin film pattern 30, and the electrode layer 40, reaches the substrate 20, and heats the substrate 20. For this reason, in order to heat the substrate 20, a larger amount of thermal energy is required by the heat capacity of the first thin film 31 than when the first thin film 31 is formed on the electrode layer 40. Therefore, the output of the second light source 14 is increased by an amount corresponding to the heat capacity of the first thin film 31.

  On the other hand, since the first thin film 31 is laminated, the first light source 13 is changed in order to change the focal depth of the first light source 13 from the first main surface 40a of the electrode layer 40 to the first main surface 31a of the first thin film 31. It is necessary to adjust the light transmission depth. Therefore, the output of the laser light emitted from the first light source 13 is lowered by an amount corresponding to the difference between the first main surface 40a of the electrode layer 40 and the first main surface 31a of the first thin film 31.

  As described above, by repeating the adjustment of decreasing the output of the first light source 13 and increasing the output of the second light source 14, a multilayer film of three or more layers can be formed.

  The remaining steps of the thin film manufacturing method according to the second embodiment are the same as those of the thin film manufacturing method described in the first embodiment.

DESCRIPTION OF SYMBOLS 10 Reaction container 11 Holding stand 12 Metal oxide precursor solution 13 1st light source 14 2nd light source 15 Fixing member 20 Substrate 30 Thin film pattern 31 1st thin film 32 2nd thin film 40 Electrode layer

Japanese Patent No. 4108502

Claims (18)

An arrangement step of arranging the substrate in a raw material solution of a thin film formed on the first main surface of the substrate;
The first light source emits first light having a wavelength at which the light absorption rate of the solvent in the raw material solution is equal to or greater than a predetermined threshold, and the light absorption rate of the solvent is higher than that of the first light from the second light source. A thin film manufacturing method comprising: a first forming step of forming the thin film on the first main surface of the substrate by irradiating a second light having a low wavelength.   In the first forming step, the second light source irradiates the second light having a wavelength less than the threshold value.   In the first forming step, after the thin film is formed on the first main surface of the substrate, the first light source emits the first light having a lower output than the first forming step, and 2. The method according to claim 1, further comprising a second forming step of forming a thin film on the thin film by irradiating the second light from the second light source with a higher output of the second light than in the first step. 2. The thin film manufacturing method according to 2. In the arranging step, the substrate in which an electrode layer is laminated on the first main surface of the substrate is arranged in the raw material solution,
4. The thin film manufacturing method according to claim 1, wherein the thin film is formed on the electrode layer in the first forming step. 5.   5. The thin film manufacturing method according to claim 1, wherein the raw material solution is a metal oxide precursor solution, and the thin film is a metal oxide thin film. The first light source is installed on the first main surface side,
The first light source irradiates the first light from the first main surface side as an irradiation position in the first formation step and the second formation step. The thin film manufacturing method as described in any one of 1 to 5. The first light source is installed on the first main surface side,
The first light source irradiates the first light from the first main surface side as an irradiation position in the first formation step and the second formation step. The thin film manufacturing method as described in any one of 1 to 5. The first light source is disposed at a position facing a second main surface which is a back surface of the first main surface of the substrate,
The first light source irradiates the first light from the second main surface side with the surface of the raw material solution as an irradiation position in the first forming step and the second forming step. The thin film manufacturing method as described in any one of 1 to 5. The first light source is disposed at a position facing a second main surface which is a back surface of the first main surface of the substrate,
The first light source irradiates the first light from the second main surface side as an irradiation position in the first formation step and the second formation step. The thin film manufacturing method as described in any one of 1 to 5. The first light source is disposed at a position facing a second main surface which is a back surface of the first main surface of the substrate,
In the first forming step, the first light source irradiates the first light from the second main surface side with the first main surface of the substrate as an irradiation position. 2. The thin film manufacturing method according to 2. The first light source is disposed at a position facing a second main surface which is a back surface of the first main surface of the substrate,
4. The thin film manufacturing method according to claim 3, wherein, in the second forming step, the first light source irradiates the first light from the second main surface side as an irradiation position on the thin film. . The second light source is installed on the first main surface side,
In the first forming step, the second light source irradiates the second light from the first main surface side with the first main surface of the substrate as an irradiation position. The thin film manufacturing method according to any one of 11. The second light source is installed on the first main surface side,
The said 2nd light source irradiates the said 2nd light by making the said thin-film top into an irradiation position from the said 1st main surface side in the said 2nd formation process. The thin film manufacturing method according to item. The second light source is installed on the first main surface side,
2. In the first forming step and the second forming step, the second light source irradiates the second light with the inside of the substrate as an irradiation position from the first main surface side. The thin film manufacturing method as described in any one of 1-11. The second light source is installed on the first main surface side,
In the first forming step and the second forming step, the second light source has the second main surface, which is the back surface of the first main surface of the substrate, from the first main surface side as an irradiation position. The thin film manufacturing method according to claim 1, wherein the light is irradiated. The second light source is disposed at a position facing a second main surface that is a back surface of the first main surface of the substrate,
2. In the first forming step and the second forming step, the second light source irradiates the second light from the second main surface side with the inside of the substrate as an irradiation position. The thin film manufacturing method as described in any one of 1-11. The second light source is disposed at a position facing a second main surface that is a back surface of the first main surface of the substrate,
In the first forming step and the second forming step, the second light source irradiates the second light from the second main surface side with the second main surface which is the back surface of the substrate as an irradiation position. The method for producing a thin film according to claim 1, wherein:   A thin film element using the thin film manufactured by the thin film manufacturing method according to claim 1.

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