JP2011110616A - Polishing method - Google Patents

Polishing method Download PDF

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JP2011110616A
JP2011110616A JP2009266061A JP2009266061A JP2011110616A JP 2011110616 A JP2011110616 A JP 2011110616A JP 2009266061 A JP2009266061 A JP 2009266061A JP 2009266061 A JP2009266061 A JP 2009266061A JP 2011110616 A JP2011110616 A JP 2011110616A
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sample
polishing
sample piece
covering material
polished
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Mariko Nakamura
真理子 中村
Hiroyuki Saito
博之 齋藤
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Nippon Telegraph and Telephone Corp
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Nippon Telegraph and Telephone Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To independently treat a sample piece after the sample piece is polished while restraining damage on a polishing cloth used for polishing. <P>SOLUTION: A coating material 103 formation face of a base 101 is brought into contact with a polishing cloth and polished, and the coating material 103 on a top of a sample piece 102 is removed to expose a surface 121, which is a polishing object of the sample piece 102. Sequentially, the surface 121 of the sample piece 102 exposed by removing the coating material 103 is brought into contact with the polishing cloth fixed to a rotating polish plate, so as to polish the surface 121 of the sample piece 102. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、例えば、表面観察などを行うために観察対象となる試料の表面を研磨する研磨方法に関するものである。   The present invention relates to a polishing method for polishing a surface of a sample to be observed, for example, for surface observation.

固体試料の分析などでは、試料の表面を鏡面に研磨し、得られた鏡面を化学修飾などにより処理し、この後、処理した面を顕微鏡などで観察する。また、この観察の結果により決定された箇所の組成を、例えば、SIMS(Secondary Ion-microprobe Mass Spectrometry:二次イオン質量分析)により分析している。このような分析は、電子デバイスや半導体材料の研究を進める上で重要となる。   In the analysis of a solid sample, the surface of the sample is polished to a mirror surface, the obtained mirror surface is processed by chemical modification or the like, and then the processed surface is observed with a microscope or the like. Moreover, the composition of the location determined by the result of this observation is analyzed by, for example, SIMS (Secondary Ion-microprobe Mass Spectrometry). Such an analysis is important in conducting research on electronic devices and semiconductor materials.

上述した試料の研磨では、一般に、種々の研磨布を用いた研磨装置が用いられている。この研磨装置は、図2A,図2Bに示すように、研磨材が含まれている研磨布201が研磨盤202に固定され、研磨盤202が回転する構成とされている。また、研磨盤202の上には、自転する試料ホルダー203が配置され、試料ホルダー203に研磨対象の試料204が固定される。この研磨装置において、試料204を固定した試料ホルダー203の加圧部205に圧力を加え、回転する研磨盤202に固定された研磨布201に、試料204の研磨対称面を当接させることで研磨を行う(非特許文献1参照)。なお、本装置では、給水部206を備え、研磨盤202が設置されている領域に給水可能とされている。   In the above-described polishing of the sample, a polishing apparatus using various polishing cloths is generally used. As shown in FIGS. 2A and 2B, this polishing apparatus is configured such that a polishing cloth 201 containing an abrasive is fixed to a polishing board 202 and the polishing board 202 rotates. A sample holder 203 that rotates is disposed on the polishing board 202, and the sample 204 to be polished is fixed to the sample holder 203. In this polishing apparatus, the pressure is applied to the pressure unit 205 of the sample holder 203 to which the sample 204 is fixed, and the polishing cloth 201 fixed to the rotating polishing disk 202 is brought into contact with the polishing symmetry surface of the sample 204 for polishing. (Refer nonpatent literature 1). In addition, in this apparatus, the water supply part 206 is provided and water supply is possible to the area | region where the grinding | polishing board 202 is installed.

ここで、前述したような分析を行う試料は、寸法が数mmと微小な試料片であり、この状態では、試料ホルダーに固定することが容易ではない。このため、よく知られているように、微小な試料片は、樹脂などに埋め込み、この樹脂を円筒形状などに成型し、樹脂の成形体と共に研磨している。このように、試料片を樹脂成形体に封止して取り扱うことで、例えば、研磨対象を研磨装置に装着可能な寸法とすることが可能となる。   Here, the sample to be analyzed as described above is a small sample piece with a dimension of several millimeters, and in this state, it is not easy to fix it to the sample holder. For this reason, as is well known, a minute sample piece is embedded in a resin or the like, the resin is molded into a cylindrical shape or the like, and polished together with a molded body of the resin. Thus, by handling the sample piece sealed in the resin molded body, for example, it becomes possible to make the object to be polished a dimension that can be mounted on the polishing apparatus.

ところで、試料片の封止に用いる樹脂は、試料ホルダーに装着した研磨動作に耐えられるなどの強度・耐性を備えているものとなる。従って、試料片より封止に用いた樹脂を除去することが容易ではない。このため、研磨などの試料作製処理をした後の試料の表面観察などは、試料片を樹脂成形体に封止した状態で行うことになる。しかしながら、観察などに用いる測定装置や分析装置が、数mm程度の寸法の微小な試料片を対象としている場合、上述したように樹脂体に封止されている状態では、装置に装着することができなくなる。   By the way, the resin used for sealing the sample piece has strength and resistance such that it can withstand the polishing operation attached to the sample holder. Therefore, it is not easy to remove the resin used for sealing from the sample piece. For this reason, surface observation of the sample after sample preparation processing such as polishing is performed in a state where the sample piece is sealed in the resin molded body. However, when a measurement device or an analysis device used for observation or the like is intended for a small sample piece having a size of about several millimeters, it can be attached to the device in a state where it is sealed in a resin body as described above. become unable.

以上の問題に対し、微細な試料片をガラスなどの支持体に接着固定し、支持体を保持することで試料片の研磨を行う方法が提案されている(非特許文献2参照)。この方法によれば、試料片を研磨した後、支持体より取り外すことが可能であり、微小な試料片を対象としている装置で測定や分析を行うことが可能となる。   In order to solve the above problems, a method has been proposed in which a fine sample piece is bonded and fixed to a support such as glass and the sample piece is polished by holding the support (see Non-Patent Document 2). According to this method, after the sample piece is polished, it can be removed from the support, and measurement and analysis can be performed with an apparatus that is intended for a small sample piece.

自動研磨装置 カタログ、「エコメット250+オートメット250 エコメット300+オートメット300」、株式会社三啓。Automatic polishing equipment catalog, “Ecomet 250 + Automet 250 Ecomet 300 + Automet 300”, Sankei Co., Ltd. 原口 智宏 著、「半導体材料の機械研磨−TEM 用試料の作製に向けて−」、平成18年度宮崎大学工学部教育研究支援技術センター報告,技術センター報告vol.4、2006年。Tomohiro Haraguchi, “Mechanical Polishing of Semiconductor Materials—Toward Preparation of TEM Samples”, 2006 Miyazaki University Faculty of Engineering Education Research Support Technology Center, Technical Center Report vol. 4, 2006.

しかしながら、上述した技術では、試料片が埋め込まれていないため、例えば、試料片の形状がおおよそ直方体の場合、試料片の研磨面に対して垂直な側面(端面)を露出して備えていることになる。ここで、移動(回転)している研磨布を用いた研磨において、例えば、試料片の研磨面の下に入り込もうとする直前の研磨布には、よく知られているように撓みが発生する。このように研磨布の撓みが発生している箇所が、研磨面に対して垂直な端面を備える試料片の縁部に進入すると、この縁部に研磨布が掛かり、試料片と研磨布との間の滑らかな摺動を阻害し、研磨布に損傷を与える場合がある。   However, in the above-described technique, since the sample piece is not embedded, for example, when the shape of the sample piece is approximately a rectangular parallelepiped, the side surface (end face) perpendicular to the polishing surface of the sample piece is exposed and provided. become. Here, in the polishing using the moving (rotating) polishing cloth, for example, the polishing cloth just before entering the polishing surface of the sample piece is bent as well known. When the location where the polishing cloth is bent in this way enters the edge of the sample piece having an end surface perpendicular to the polishing surface, the polishing cloth is applied to the edge, and the sample piece and the polishing cloth are The smooth sliding between them may be hindered, and the polishing cloth may be damaged.

これに対し、前述したように試料片を樹脂に封止して研磨する場合、樹脂成形体の端部をいわゆる面取り加工することが可能であり、研磨布に対する負荷を抑制することができる。また、試料片は樹脂成形体に埋め込まれているので、縁部が研磨布に掛かることが発生しない。しかしながら、前述したように、樹脂成形体に試料を封止して研磨すると、研磨の後で、試料片を単独で取り扱えるようにすることが容易ではない。   On the other hand, when the sample piece is sealed with resin and polished as described above, the end portion of the resin molded body can be chamfered, and the load on the polishing cloth can be suppressed. Further, since the sample piece is embedded in the resin molded body, the edge portion does not occur on the polishing cloth. However, as described above, when a sample is sealed and polished in a resin molded body, it is not easy to handle a sample piece alone after polishing.

本発明は、以上のような問題点を解消するためになされたものであり、研磨に用いる研磨布に対する損傷の発生を抑制した状態で試料片を研磨をした後で、試料片を単独で取り扱えるようにすることを目的とする。   The present invention has been made to solve the above-described problems, and after the sample piece is polished in a state where damage to the polishing cloth used for polishing is suppressed, the sample piece can be handled alone. The purpose is to do so.

本発明に係る研磨方法は、基台の試料固定部に試料を配置する第1工程と、試料固定部に配置した試料を被覆材で覆って包み込む第2工程と、回転する研磨板の上に固定されて研磨剤が含まれている研磨布に基台の被覆材形成面を当接して試料の上部の被覆材を除去して試料の表面を露出させる第3工程と、被覆材が除去されて露出した試料の表面を、回転する研磨板に固定された研磨布に当接し、試料の表面を研磨する第4工程とを少なくとも備え、被覆材は、研磨により試料と共に研磨される材料から構成され、被覆材は、試料と化学反応を起こさない材料から構成され、被覆材は、試料が変化しない範囲の温度の加熱および化学反応の少なくとも1つにより溶ける材料から構成されている。   The polishing method according to the present invention includes a first step of placing a sample on a sample fixing portion of a base, a second step of covering and wrapping the sample placed on the sample fixing portion with a covering material, and a rotating polishing plate A third step in which the covering material forming surface of the base is brought into contact with a fixed polishing cloth containing an abrasive to remove the covering material on the top of the sample to expose the surface of the sample; and the covering material is removed The surface of the exposed sample is brought into contact with a polishing cloth fixed to a rotating polishing plate, and at least a fourth step of polishing the surface of the sample, and the covering material is made of a material that is polished together with the sample by polishing. The covering material is made of a material that does not cause a chemical reaction with the sample, and the covering material is made of a material that melts by at least one of heating and chemical reaction in a range where the sample does not change.

以上説明したように、本発明によれば、除去可能な被覆材で試料を被覆してから研磨するようにしたので、研磨に用いる研磨布に対する損傷の発生を抑制した状態で研磨をした後で、試料片を単独で取り扱えるようになるという優れた効果が得られる。   As described above, according to the present invention, since the sample is coated with a removable covering material and then polished, the polishing is performed in a state where the occurrence of damage to the polishing cloth used for polishing is suppressed. The excellent effect of being able to handle the sample piece alone is obtained.

本発明の実施の形態における研磨方法を説明する工程図である。It is process drawing explaining the grinding | polishing method in embodiment of this invention. 本発明の実施の形態における研磨方法を説明する工程図である。It is process drawing explaining the grinding | polishing method in embodiment of this invention. 本発明の実施の形態における研磨方法を説明する工程図である。It is process drawing explaining the grinding | polishing method in embodiment of this invention. 本発明の実施の形態における研磨方法を説明する工程図である。It is process drawing explaining the grinding | polishing method in embodiment of this invention. 研磨装置の構成を示す説明図である。It is explanatory drawing which shows the structure of a grinding | polishing apparatus. 研磨装置の一部構成を示す平面図である。It is a top view which shows the partial structure of a grinding | polishing apparatus.

以下、本発明の実施の形態について図を参照して説明する。図1A〜図1Dは、本発明の実施の形態における研磨方法を説明するための工程図である。図1A〜図1Dは、断面を模式的に示している。まず、図1Aに示すように、基台101の試料固定部(試料固定面)111に試料片102を配置する。基台101は、例えば、金属、プラスチック、ガラス、セラミックなどの材料から構成することができる。また、例えば、研磨などで研磨対象をホルダーに接着するためによく用いられるワックスにより、試料片102を試料固定部111に接着固定すればよい。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1A to 1D are process diagrams for explaining a polishing method according to an embodiment of the present invention. 1A to 1D schematically show cross sections. First, as shown in FIG. 1A, the sample piece 102 is arranged on the sample fixing portion (sample fixing surface) 111 of the base 101. The base 101 can be made of a material such as metal, plastic, glass, or ceramic, for example. Further, for example, the sample piece 102 may be bonded and fixed to the sample fixing portion 111 with a wax often used for bonding the object to be polished to the holder by polishing or the like.

次に、図1Bに示すように、試料固定部111に配置した試料片102を被覆材103で覆って包み込む。ここで、被覆材103は、図1Bに断面形状を示すように、表面が曲面で構成されて突起部などがない形状に形成されていることが重要となる。また、被覆材103は、研磨により試料片102と共に研磨される材料から構成されていることが重要となる。また、被覆材103は、試料片102と化学反応を起こさない材料から構成されていることが重要となる。   Next, as shown in FIG. 1B, the sample piece 102 arranged in the sample fixing unit 111 is covered with a covering material 103 and wrapped. Here, as shown in FIG. 1B, it is important that the covering material 103 is formed in a shape having a curved surface and no protrusions. It is important that the covering material 103 is made of a material that is polished together with the sample piece 102 by polishing. It is important that the covering material 103 is made of a material that does not cause a chemical reaction with the sample piece 102.

加えて、被覆材103は、試料片102が変化しない範囲の加熱温度および化学反応の少なくとも1つの手段により溶ける材料から構成されていることが重要となる。例えば、被覆材103は、金属ガリウム、55℃で軟化するアルコワックス、融点が75℃のSn/57Bi/26In合金(はんだ材)などより構成すればよい。   In addition, it is important that the covering material 103 is made of a material that can be melted by at least one means of heating temperature and chemical reaction within a range where the sample piece 102 does not change. For example, the covering material 103 may be made of metal gallium, an alcohol wax that softens at 55 ° C., a Sn / 57Bi / 26In alloy (solder material) having a melting point of 75 ° C., or the like.

例えば、ガリウムを用いる場合、被覆材103は、ガリウムの融点である約28℃以上に加熱することで溶解する。なお、このような低融点金属を被覆材103として用いる場合、以下の研磨などの工程において、周囲温度を20℃以下に維持し、被覆材103が溶解しないようにすることが重要となる。これに対し、上述したアルコワックスやはんだ材などを用いる場合、研磨などの工程において、周囲温度をあまり低下させる必要はない。   For example, when gallium is used, the covering material 103 is dissolved by heating to about 28 ° C. or higher, which is the melting point of gallium. When such a low-melting-point metal is used as the covering material 103, it is important to maintain the ambient temperature at 20 ° C. or lower so that the covering material 103 does not melt in the following steps such as polishing. On the other hand, when the above-described alcohol wax or solder material is used, it is not necessary to reduce the ambient temperature so much in a process such as polishing.

次に、研磨装置(非特許文献1参照)を用い、回転する研磨板の上に固定されて研磨剤が含まれている研磨布に基台101の被覆材103形成面を当接して研磨することで、図1Cに示すように、試料片102の上部の被覆材103を除去し、試料片102の研磨対象となる表面121を露出させる。この研磨では、表面121を露出させることが目的であり、研磨剤の粒度は粗くしておき、研磨速度を速くしておくとよい。ここで、被覆材103は、表面が曲面で構成され、研磨布に損傷を与えるような角度を有する縁部(突起部)を備えていないので、この研磨において、研磨布が損傷することがない。   Next, using a polishing apparatus (see Non-Patent Document 1), the surface of the base 101 on which the coating material 103 is formed is brought into contact with a polishing cloth fixed on a rotating polishing plate and containing an abrasive, and then polished. Thus, as shown in FIG. 1C, the covering material 103 on the upper part of the sample piece 102 is removed, and the surface 121 of the sample piece 102 to be polished is exposed. In this polishing, the purpose is to expose the surface 121, and it is preferable that the particle size of the abrasive is coarse and the polishing rate is high. Here, since the covering material 103 has a curved surface and does not include an edge (projection) having an angle that damages the polishing cloth, the polishing cloth is not damaged in this polishing. .

引き続いて、被覆材103が除去されて露出した試料片102の表面121を、回転する研磨板に固定された研磨布に当接させ、試料片102の表面121を研磨する。この研磨では、研磨剤の粒度を徐々に細かくし、粗研磨から最終的な仕上げ研磨(鏡面研磨)へと移行させる。   Subsequently, the surface 121 of the sample piece 102 exposed by removing the covering material 103 is brought into contact with a polishing cloth fixed to a rotating polishing plate, and the surface 121 of the sample piece 102 is polished. In this polishing, the particle size of the abrasive is gradually reduced to shift from rough polishing to final finish polishing (mirror polishing).

ここで、表面121が露出した状態では、露出している表面121と被覆材103の研磨面131とが連続して存在し、表面121と研磨面131と連続した面を形成している。このため、相対的に移動している研磨布に対して被覆材103の研磨面131が案内面のような機能をはたし、研磨布が撓むことなく試料片102の縁部を通過して表面121と摺動することになる。また、試料片102の表面121に対する側部(側面)は、被覆材103に覆われており、研磨布に触れることがない。従って、本実施の形態によれば、試料片102の縁部で、研磨布に損傷を与えることが抑制されるようになる。   Here, in the state where the surface 121 is exposed, the exposed surface 121 and the polishing surface 131 of the covering material 103 are continuously present, and a surface continuous with the surface 121 and the polishing surface 131 is formed. Therefore, the polishing surface 131 of the covering material 103 functions as a guide surface with respect to the relatively moving polishing cloth, and the polishing cloth passes through the edge of the sample piece 102 without bending. And slide with the surface 121. Moreover, the side part (side surface) with respect to the surface 121 of the sample piece 102 is covered with the coating | covering material 103, and does not touch polishing cloth. Therefore, according to the present embodiment, damage to the polishing cloth at the edge of the sample piece 102 is suppressed.

以上のようにすることで、試料片102の研磨対象となる表面121を所望の状態に研磨した後、被覆材103を除去する。例えば、ガリウムより被覆材103を構成した場合、ガリウムの融点が28℃であるので、例えば30℃程度に加熱すればよい。この加熱により、被覆材103は溶解して除去され、図1Dに示すように、試料固定部111には、試料片102のみが配置された状態となる。この後、エタノールなどのアルコール形容剤、芳香族系溶剤、および水溶性洗剤で洗浄し、接着材(ワックス)を溶解することで、試料固定部111より試料片102を取り外す。このように、本実施の形態によれば、試料片102の取り外しが容易であり、研磨した試料片102を単独で取り扱え、様々な分析装置を用いた分析が行えるようになる。   As described above, the surface 121 to be polished of the sample piece 102 is polished to a desired state, and then the covering material 103 is removed. For example, when the covering material 103 is made of gallium, since the melting point of gallium is 28 ° C., it may be heated to about 30 ° C., for example. By this heating, the covering material 103 is dissolved and removed, and as shown in FIG. 1D, only the sample piece 102 is placed in the sample fixing portion 111. Thereafter, the sample piece 102 is removed from the sample fixing portion 111 by washing with an alcohol-type agent such as ethanol, an aromatic solvent, and a water-soluble detergent and dissolving the adhesive (wax). As described above, according to the present embodiment, the sample piece 102 can be easily detached, and the polished sample piece 102 can be handled independently, and analysis using various analyzers can be performed.

なお、本発明は以上に説明した実施の形態に限定されるものではなく、本発明の技術的思想内で、当分野において通常の知識を有する者により、多くの変形が実施可能であることは明白である。例えば、試料片は、セラミック、ガラス、金属(合金)、半導体などの各種の固体材料である。また、被覆材に用いる材料は、ガリウム、アルコワックス、はんだ材に限るものではなく、研磨により試料と共に研磨され、試料と化学反応を起こさず、試料が変化しない範囲の温度による加熱および化学反応の少なくとも1つにより溶ける材料から構成されていればよい。   It should be noted that the present invention is not limited to the embodiment described above, and that many modifications can be implemented by those having ordinary knowledge in the art within the technical idea of the present invention. It is obvious. For example, the sample pieces are various solid materials such as ceramic, glass, metal (alloy), and semiconductor. The material used for the coating material is not limited to gallium, alcohol wax, and solder material. The material is polished together with the sample by polishing and does not cause a chemical reaction with the sample. It should just be comprised from the material which can be melt | dissolved by at least one.

化学反応により溶ける材料とは、例えば、試料が溶解することがない溶剤(溶媒),および酸などの溶液に溶解する材料である。例えば、試料が溶解することがない溶剤に溶解する樹脂を被覆材に用いれば、溶剤を用いた溶解により、試料より被覆材を除去することができる。また例えば、試料が溶解することがない酸に溶解する金属材料を被覆材に用いれば、酸を用いた溶解により、試料より被覆材を除去することができる。   The material that dissolves by a chemical reaction is, for example, a material that dissolves in a solution such as a solvent (solvent) in which a sample does not dissolve and an acid. For example, if a resin that dissolves in a solvent that does not dissolve the sample is used as the coating material, the coating material can be removed from the sample by dissolution using a solvent. Further, for example, when a metal material that dissolves in an acid that does not dissolve the sample is used as the coating material, the coating material can be removed from the sample by dissolution using an acid.

なお、被覆材は、研磨により試料と共に研磨される程度の硬度であることが重要であるが、硬度が低すぎると、研磨において剥離してしまう。従って、被覆材は、研磨において、剥離しない程度の硬度は必要である。この中で、被覆材は、試料と同程度の硬度とされているとよい。   In addition, it is important that the coating material has a hardness enough to be polished together with the sample by polishing, but if the hardness is too low, the coating material is peeled off. Therefore, the coating material needs to have a hardness that does not peel off during polishing. Among these, it is preferable that the coating material has the same hardness as the sample.

101…基台、102…試料片、103…被覆材、111…試料固定部、121…表面、131…研磨面。   DESCRIPTION OF SYMBOLS 101 ... Base, 102 ... Sample piece, 103 ... Covering material, 111 ... Sample fixing | fixed part, 121 ... Surface, 131 ... Polishing surface.

Claims (1)

基台の試料固定部に試料を配置する第1工程と、
前記試料固定部に配置した前記試料を被覆材で覆って包み込む第2工程と、
回転する研磨板の上に固定されて研磨剤が含まれている研磨布に前記基台の前記被覆材形成面を当接して前記試料の上部の前記被覆材を除去して前記試料の表面を露出させる第3工程と、
被覆材が除去されて露出した前記試料の表面を、回転する前記研磨板に固定された前記研磨布に当接し、前記試料の表面を研磨する第4工程と
を少なくとも備え、
前記被覆材は、前記研磨により前記試料と共に研磨される材料から構成され、
前記被覆材は、前記試料と化学反応を起こさない材料から構成され、
前記被覆材は、前記試料が変化しない範囲の温度の加熱および化学反応の少なくとも1つにより溶ける材料から構成されている
ことを特徴とする研磨方法。
A first step of placing a sample on the sample fixing portion of the base;
A second step of covering and wrapping the sample arranged in the sample fixing part with a covering material;
The covering material forming surface of the base is brought into contact with a polishing cloth fixed on a rotating polishing plate and containing an abrasive to remove the covering material on the top of the sample to remove the surface of the sample. A third step of exposing;
And at least a fourth step of abutting the surface of the sample exposed by removing the covering material with the polishing cloth fixed to the rotating polishing plate and polishing the surface of the sample,
The covering material is composed of a material that is polished together with the sample by the polishing,
The covering material is composed of a material that does not cause a chemical reaction with the sample,
The said covering material is comprised from the material melt | dissolved by at least 1 of the heating of the temperature of the range which does not change the said sample, and a chemical reaction. The polishing method characterized by the above-mentioned.
JP2009266061A 2009-11-24 2009-11-24 Polishing method Pending JP2011110616A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013191165A1 (en) * 2012-06-21 2013-12-27 国立大学法人鹿児島大学 Observation and photography apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013191165A1 (en) * 2012-06-21 2013-12-27 国立大学法人鹿児島大学 Observation and photography apparatus
JP5874074B2 (en) * 2012-06-21 2016-03-01 国立大学法人 鹿児島大学 Observation imaging device

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