JP2011101795A - High potential introducing probe device - Google Patents

High potential introducing probe device Download PDF

Info

Publication number
JP2011101795A
JP2011101795A JP2010244620A JP2010244620A JP2011101795A JP 2011101795 A JP2011101795 A JP 2011101795A JP 2010244620 A JP2010244620 A JP 2010244620A JP 2010244620 A JP2010244620 A JP 2010244620A JP 2011101795 A JP2011101795 A JP 2011101795A
Authority
JP
Japan
Prior art keywords
potential
introduction
potential introduction
high potential
introduction probe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010244620A
Other languages
Japanese (ja)
Inventor
Takuji Hara
卓司 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BESUTEKKU KK
Bestec Corp
Original Assignee
BESUTEKKU KK
Bestec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BESUTEKKU KK, Bestec Corp filed Critical BESUTEKKU KK
Priority to JP2010244620A priority Critical patent/JP2011101795A/en
Publication of JP2011101795A publication Critical patent/JP2011101795A/en
Pending legal-status Critical Current

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To introduce high potential into the epidermis at a local region of a human body in a stable and efficient manner without being affected by the surrounding environment. <P>SOLUTION: This high potential introducing probe device is provided with the functions of introducing a high potential and forming a ground potential. When a ground potential forming part 23 is gripped by a user, the high potential introducing probe 20 forms a high potential part and a ground potential part. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、災顔等の皮膚に高電位導入するための高電位導入プローブ装置に関する。The present invention relates to a high potential introduction probe device for introducing a high potential into skin such as a disaster face.

従来の電位治療器は、図1に示すように電位治療器本体10と、人体の肩等の部位に当てる通電導子12とを備えている。電源本体10は、高周波・高圧発生回路14を備え、そして通電導子12は、通電体11を備える。電源本体10と患者の肩等に直接当たる通電導子12とは高電圧用コード13を用いて接続されている。この場合、通電導子を持つことで使用者の人体は、常に高電位となり、顔に接触させても人体の電位が高くなるのみで肩との接触部分は電位よりも微電流が手に持った通電導子から導入される。使用者の人体の高電位は、アース側としての部屋の天井、床あるいは壁との間で生じ、よって、使用場所で人体の電位分布が変化されやすく、不安定となり再現性や常に同じ効果が得られなくなり、所定の部位に安定した有効な治療に必要な電位を印加することができない。さらに、通電導子を持って治療する施術者には、常に電位がかかった状態となり好ましくはない。本体10と通電導子12とは、高電圧用コード13を用いて接続されていたため高耐圧用のコネクタを用いる必要があった。As shown in FIG. 1, a conventional potential treatment device includes a potential treatment device main body 10 and a current-carrying conductor 12 applied to a site such as a shoulder of a human body. The power source body 10 includes a high frequency / high voltage generation circuit 14, and the energization conductor 12 includes an energization body 11. The power supply body 10 and the energizing conductor 12 that directly contacts the patient's shoulder or the like are connected using a high-voltage cord 13. In this case, the user's human body is always at a high potential by holding the current-carrying conductor, and the human body's electric potential only rises even if it comes in contact with the face. It is introduced from the current carrying conductor. The high potential of the user's human body is generated between the ceiling, floor, or wall of the room as the earth side, so the potential distribution of the human body tends to change at the place of use, making it unstable and reproducible or always having the same effect. It becomes impossible to obtain a potential necessary for stable and effective treatment at a predetermined site. In addition, it is not preferable for a practitioner who carries a treatment with a current-carrying conductor because a potential is always applied. Since the main body 10 and the conductive conductor 12 are connected using the high-voltage cord 13, it is necessary to use a high-voltage connector.

また、図2及び図3に示すように、電位治療器に温熱効果を備えた電源本体10の場合、電源本体10と通電導子12との接続において、電源本体10に内蔵されている高周波・高圧発生回路14と通電導子12内の通電体11とは高電圧用コード13で接続され、温熱用ヒータ回路16と通電導子12内の発熱体15とは一般用の低電圧用コード17でそれぞれ別々に接続されている。一方、図3に示すように、高電圧用コード13と低電圧用コード17とは一体化された特殊なコード18により接続されている。このように特殊コード18は、電位差のある2本のコードを近接して一体化して配設しているため、本来施術者に流れる電流が、温熱側のコードに漏れ、漏れ電流が大きくなり、また電磁誘導が生じて集中電位が生じにくく所定の部位に有効な治療電位を印加できない欠点があった。As shown in FIGS. 2 and 3, in the case of the power supply main body 10 having a thermal effect in the potential treatment device, the high-frequency power built in the power supply main body 10 is connected in the connection between the power supply main body 10 and the conductive conductor 12. The high-voltage generating circuit 14 and the current-carrying body 11 in the current-carrying conductor 12 are connected by a high-voltage cord 13, and the heater circuit 16 for heating and the heat-generating body 15 in the current-carrying conductor 12 are generally used for a low-voltage cord 17. Are connected separately. On the other hand, as shown in FIG. 3, the high-voltage cord 13 and the low-voltage cord 17 are connected by a special cord 18 integrated. Thus, since the special cord 18 has two cords having a potential difference integrated close together, the current that flows to the practitioner leaks to the cord on the heat side, and the leakage current increases. In addition, there is a drawback that an effective therapeutic potential cannot be applied to a predetermined site because electromagnetic induction occurs and a concentrated potential is hardly generated.

本発明の目的は、従来の欠点を鑑みてなされたもので、高電位導入プローブに高電位導入部とアース電位形成部とを設け、使用者が握る握持部にアース電位を形成することにより、高電位は周囲の環境に影響されずに安定して人体の局部位の表皮に高電位を効率良く導入でき、よって皮膚組織内部のイオン交換又は電子交換によるイオン分子振動又は電位刺激の効果を得ることができる。所定の部位に安定した有効な治療に必要な電位を印加することができない。さらに、通電導子を持って治療する施術者には、常に電位が帯電しない状態となり施術者にとって好ましい。The object of the present invention has been made in view of the conventional drawbacks, by providing a high potential introduction probe with a high potential introduction portion and a ground potential forming portion, and forming a ground potential at a gripping portion gripped by a user. The high potential can be stably introduced without being influenced by the surrounding environment, and the high potential can be efficiently introduced into the epidermis of the local part of the human body, and thus the effect of ion molecule vibration or potential stimulation by ion exchange or electron exchange inside the skin tissue can be achieved. Obtainable. A potential necessary for stable and effective treatment cannot be applied to a predetermined site. Furthermore, for a practitioner who treats with a current-carrying conductor, the potential is not always charged, which is preferable for the practitioner.

さらに電源本体と高電位導入プローブとを接続するコードに高電圧用コードを用いる必要がなくなり通常の低電圧用コードを使用することができるため高耐圧用コネクタが不要となり装置自身が安価になる。また、高電位が導入される通電導子に温熱作用をもたせる場合でも、電源本体と高電位導入プローブとを接続するコードは、それぞれ低電圧用コードを2本用いればよく、高電圧用コードと低電圧用コードを用いる従来に比べてコード間の漏れ電流をほとんどなくすことができ、効率の良い電位治療、さらには温熱治療を行うことができる顔の皮膚等へ高電位導入を導入するための高電位導入プローブ装置を提供することを目的とする。Further, it is not necessary to use a high-voltage cord for the cord connecting the power source main body and the high-potential introduction probe, and a normal low-voltage cord can be used. In addition, even when an energizing conductor to which a high potential is introduced has a thermal action, two low-voltage cords may be used for the cord connecting the power source body and the high-potential introduction probe. Compared to the conventional method using a low-voltage cord, the leakage current between cords can be almost eliminated, and the introduction of a high potential into the skin of the face where efficient potential treatment and thermal treatment can be performed. An object is to provide a high-potential introduction probe device.

請求項1に係る高電位導入プローブ装置は、電源本体と、高電位導入プローブとを備え、前記電源本体と前記高電位導入プローブの電源入力端とは低電圧用コードを介して接続され、かつ前記高電位導入プローブは、入力端子に印加される電圧により駆動して高周波を出力する発振回路と、該発振回路に接続されて200V〜800Vに昇圧された高電位を出力するための高電位生成トランスとを備える高電位導入形成回路とを備え、該高電位導入形成回路からの高電圧出力を高電圧用導線を介して高電位導入通電導子に印加し、かくして高電位導入形成回路と高電位導入通電導子との間が高電位側となり、一方高電位導入形成回路と電源入力端との間が低電圧側となり、人体の表面に集中して高電位を導入する。The high potential introduction probe device according to claim 1 includes a power supply body and a high potential introduction probe, and the power supply body and a power input terminal of the high potential introduction probe are connected via a low voltage cord, and The high potential introduction probe is driven by a voltage applied to an input terminal to output a high frequency, and a high potential generation for outputting a high potential boosted to 200 V to 800 V connected to the oscillation circuit. A high potential introduction forming circuit including a transformer, and a high voltage output from the high potential introduction formation circuit is applied to a high potential introduction energizing conductor via a high voltage lead, thus the high potential introduction formation circuit and the high potential introduction circuit Between the potential introduction energizing conductor is the high potential side, while between the high potential introduction forming circuit and the power supply input end is the low voltage side, the high potential is concentrated on the surface of the human body.

請求項2に係る高電位導入プローブ装置において、前記高電位導入通電導子は、前記高電位導入プローブに連結されていることを特徴とする。3. The high potential introduction probe device according to claim 2, wherein the high potential introduction energizing conductor is connected to the high potential introduction probe.

請求項3に係る高電位導入プローブ装置において、前記高電位側と前記低電圧側との境界となる高電位生成トランスが配置される位置にフィンガー・ガイドを設けることを特徴とする。The high-potential introduction probe device according to claim 3 is characterized in that a finger guide is provided at a position where a high-potential generation transformer serving as a boundary between the high-potential side and the low-voltage side is disposed.

請求項4に係る高電位導入プローブ装置において、前記高電位生成トランスは、前記高電位導入プローブの入力端子を電源入力端側に、その出力端子を前記通電体側に配置することを特徴とする。5. The high potential introducing probe device according to claim 4, wherein the high potential generating transformer is configured such that an input terminal of the high potential introducing probe is disposed on a power input end side and an output terminal thereof is disposed on the energizing body side.

請求項5に係る高電位導入プローブ装置において、前記電源入力端と前記高電位生成トランスの入力端子との間にアース電位形成部が形成され、該アース電位形成部に握持部を設けることを特徴とする。6. The high potential introducing probe device according to claim 5, wherein a ground potential forming portion is formed between the power input end and the input terminal of the high potential generating transformer, and a gripping portion is provided in the ground potential forming portion. Features.

請求項6に係る高電位導入プローブ装置において、前記通電体は、樹脂等の外装体の中に設けられており、該通電体から外装体表面までの間隔は、2mm〜5mmを有することを特徴とする。The high-potential introduction probe device according to claim 6, wherein the energization body is provided in an exterior body such as a resin, and a distance from the energization body to the exterior body surface is 2 mm to 5 mm. And

従来の電位治療器を示す概略構成図である。It is a schematic block diagram which shows the conventional electric potential treatment apparatus. 従来の電位治療器を示す他の概略構成図である。It is another schematic block diagram which shows the conventional electric potential treatment apparatus. 従来の電位治療器を示すさらに他の概略構成図である。It is another schematic block diagram which shows the conventional electric potential treatment apparatus. 本発明に係る高電位導入プローブ装置を示す概略構成図である。It is a schematic block diagram which shows the high electric potential introduction | transduction probe apparatus based on this invention. 本発明に係る高電位導入プローブ装置を示す他の概略構成図である。It is another schematic block diagram which shows the high electric potential introduction | transduction probe apparatus based on this invention. 本発明に係る高電位導入プローブ装置の高電位導入プローブを示す概略図である。It is the schematic which shows the high potential introduction probe of the high potential introduction probe device concerning the present invention. 本発明に係る高電位導入プローブの他の通電導子を示す概略断面図である。It is a schematic sectional drawing which shows the other electricity conducting conductor of the high electric potential introduction | transduction probe which concerns on this invention. 本発明に係る他の高電位導入プローブを示す要部概略断面図である。It is a principal part schematic sectional drawing which shows the other high electric potential introduction | transduction probe which concerns on this invention. 第8図の高電位導入プローブを示す要部平面図である。It is a principal part top view which shows the high electric potential introduction | transduction probe of FIG. 本発明に係る高電位導入プローブ装置の高電位導入プローブの高周波・高圧発生回路及び通電回路を示す回路図である。It is a circuit diagram which shows the high frequency and high voltage | pressure generation circuit and energization circuit of the high potential introduction probe of the high potential introduction probe device according to the present invention. 本発明に係る太陽電池を組込んだ高電位導入プローブの高周波・高圧発生回路及び通電回路を示す回路図である。It is a circuit diagram which shows the high frequency and high voltage | pressure generation circuit and energization circuit of the high electric potential introduction | transduction probe incorporating the solar cell which concerns on this invention. 他の実施例を示す高電位導入プローブの内部構造の配置概略図である。It is arrangement | positioning schematic of the internal structure of the high electric potential introduction | transduction probe which shows another Example.

図4は、本発明に係る高電位導入プローブ装置を示す基本構成図である。高電位導入プローブ装置は、電源本体10と高電位導入プローブ20とを備え、電源本体10と高電位導入プローブ20とは、低電圧用コード17で接続されている。高電位導入プローブ20は、高電位導入形成回路30と通電体24を備える。高電位導入形成回路30と通電体24とは高電圧用導線28で接続されている。図5において、高電位導入プローブ20は、高電位導入形成回路30と通電体の他に発熱体15を備える。この場合でも高電位導入形成回路30と通電体24とは高電圧用導線28で接続されている。そして、電源本体は、高電位導入形成回路30及び発熱体15とそれぞれ低電圧用コードの一般コード17で接続される。なお、高電位導入プローブ20とは切り離して別に通電体24を内蔵した通電導子12を設けてもよい。FIG. 4 is a basic configuration diagram showing a high potential introducing probe device according to the present invention. The high potential introduction probe device includes a power supply body 10 and a high potential introduction probe 20, and the power supply body 10 and the high potential introduction probe 20 are connected by a low voltage cord 17. The high potential introduction probe 20 includes a high potential introduction formation circuit 30 and an energization body 24. The high-potential introduction forming circuit 30 and the energization body 24 are connected by a high-voltage conductor 28. In FIG. 5, the high-potential introduction probe 20 includes a heating element 15 in addition to the high-potential introduction formation circuit 30 and the energization body. Even in this case, the high-potential introduction forming circuit 30 and the energizing body 24 are connected by the high-voltage conductor 28. The power source body is connected to the high-potential introduction forming circuit 30 and the heating element 15 by the low-voltage cord general code 17. Note that the current-carrying conductor 12 having the current-carrying body 24 may be provided separately from the high-potential introduction probe 20.

本発明に係る高電位導入プローブによれば、高電位導入プローブに高電位導入機能とアース電位形成機能を持たせ、このアース電位形成部23を使用者が握ることにより高電位導入プローブ20に高電位部とアース電位部とを形成させる。高電位導入機能とアース電位形成機能との距離を接近させることができ、よって高電位は周囲の環境に影響されずに安定にすることにより人体の局部位の表皮に高電位を効率良く導入でき皮膚組織内部のイオン交換又は電子交換によるイオン分子振動又は電位刺激の効果を得ることができる。特にハンディタイプの美顔器等においては、より効率良く表皮に高電位を導入できる。According to the high potential introduction probe according to the present invention, the high potential introduction probe is provided with a high potential introduction function and a ground potential formation function, and the user holds the ground potential formation portion 23 so that the high potential introduction probe 20 has a high potential. A potential portion and a ground potential portion are formed. The distance between the high potential introduction function and the ground potential forming function can be made closer, so that the high potential can be efficiently introduced into the epidermis of the local part of the human body by stabilizing the high potential without being affected by the surrounding environment. The effect of ion molecule vibration or potential stimulation by ion exchange or electron exchange inside the skin tissue can be obtained. In particular, in a handy type facial device, a high potential can be introduced into the epidermis more efficiently.

以下、本発明に係る高電位導入プローブ装置を図面を参照して詳述する。
図6は、本発明に係る高電位導入プローブ装置の高電位導入プローブの概略図を示す。高電位導入プローブ20は、電源本体10と低電圧用コード17で接続され、使用者が手で握るための握持部22と、握持部22の先端側に設けられたヘッド部21とを備える。ヘッド部21には通電導電子12が取り付けられている。握持部22領域外のヘッド部21には高周波・高電圧を形成する高電位導入形成回路30が組み込まれており、通電導子12には、通電体24とその高電位導入用通電回路32が組み込まれている。高電位導入プローブのヘッド部21と握持部22とは樹脂等で一体成形して作られている。高電位導入形成回路30と高電位導入用通電用回路32とは入出端子44、46を介して高電圧用導線28で接続されている。なお、高電位導入形成回路30は、ヘッド部21でなく通電導子12に設けてもよい。
Hereinafter, a high potential introducing probe device according to the present invention will be described in detail with reference to the drawings.
FIG. 6 shows a schematic diagram of a high potential introduction probe of the high potential introduction probe device according to the present invention. The high-potential introduction probe 20 is connected to the power supply main body 10 by a low-voltage cord 17 and includes a gripping part 22 for a user to grip with a hand and a head part 21 provided on the distal end side of the gripping part 22. Prepare. A conducting conductor 12 is attached to the head portion 21. A high-potential introduction forming circuit 30 that forms a high frequency and a high voltage is incorporated in the head portion 21 outside the gripping portion 22 area. The energizing conductor 12 and the energizing circuit 32 for introducing the high potential are provided in the energizing conductor 12. Is incorporated. The head portion 21 and the gripping portion 22 of the high potential introducing probe are integrally formed of resin or the like. The high-potential introduction forming circuit 30 and the high-potential introduction energizing circuit 32 are connected by a high-voltage conductor 28 via input / output terminals 44 and 46. Note that the high-potential introduction forming circuit 30 may be provided not in the head portion 21 but in the energizing conductor 12.

高電位導入形成回路30と通電導子12との間が高電位側となり、一方高電位導入形成回路30と電源入力端34との間が低電圧側となる。握持部22は、高電位の対極となる低電位を形成するアース電位形成部23が形成される。高電位側と低電位側との間、すなわち高電位導入プローブの高電位導入形成回路30と握持部22のアース電位形成部23との間にフィンガー・ガイド(電位バリヤー)19を設けてもよい。使用者が、アース電位形成部23を手で握持することで人体がア−ス電位となる。よって、高電位部とアース電位部とが完全に分かれた形で高電位差が確立される。そのため安定した高電位導入効果が得られる。なお、握持部22に高電位の対極となるアース電位を形成するために握持部22の内面に銅箔等のフィルムを取り付けてもよい。高電位導入形成回路30は、握持部22のアース電位形成部23からできるだけ離れた位置に配設されることが好ましい。The high potential introduction circuit 30 and the conducting conductor 12 are on the high potential side, while the high potential introduction circuit 30 and the power supply input end 34 are on the low voltage side. The gripping portion 22 is formed with a ground potential forming portion 23 that forms a low potential as a counter electrode having a high potential. A finger guide (potential barrier) 19 may be provided between the high-potential side and the low-potential side, that is, between the high-potential introduction forming circuit 30 of the high-potential introduction probe and the ground potential forming section 23 of the gripping portion 22. Good. When the user holds the ground potential forming unit 23 by hand, the human body becomes the ground potential. Therefore, the high potential difference is established in a form in which the high potential portion and the ground potential portion are completely separated. Therefore, a stable high potential introduction effect can be obtained. Note that a film such as a copper foil may be attached to the inner surface of the gripping portion 22 in order to form a ground potential as a high potential counter electrode on the gripping portion 22. The high potential introduction forming circuit 30 is preferably disposed at a position as far as possible from the ground potential forming portion 23 of the gripping portion 22.

通電導子12は、円盤形状を有し、顔等の皮膚に高電位を導入するための通電体24が組み込まれている。通電体24は、高電位導入プローブのヘッド部21と連結されており、外装体26としての樹脂等で囲ぎょうされている。導電体と外装体表面とは、2mm〜5mmの間隔をもって設けられていることが好ましい。この間隔が近いほど局所電位集中がしやすいが、加工の制約上2mm〜5mmの間隔をもって作られている。The energizing conductor 12 has a disk shape and incorporates an energizing body 24 for introducing a high potential into the skin such as the face. The energizing body 24 is connected to the head portion 21 of the high potential introducing probe, and is surrounded by a resin or the like as the exterior body 26. It is preferable that the conductor and the exterior body surface are provided with an interval of 2 mm to 5 mm. The closer the distance is, the easier the local potential concentration is. However, the distance is 2 mm to 5 mm due to processing restrictions.

図7は、顔等の皮膚に高電位を導入するための他の通電導子12の要部断面図を示す、通電導子12は、通電体24と銅薄製の電極25とをプラスチック製の外装体26の内部に組み込んで形成される。かくして、マイナスに帯電した通電体24は、電極25を介して皮膚にマイナスの電位を与えることができる。FIG. 7 shows a cross-sectional view of the main part of another energizing conductor 12 for introducing a high potential into the skin such as the face. The energizing conductor 12 includes an energizing body 24 and a copper thin electrode 25 made of plastic. It is formed by being incorporated in the exterior body 26. Thus, the negatively charged electrification member 24 can apply a negative potential to the skin via the electrode 25.

図8は、他の高電位導入プローブのヘッド部の概略断面図を示す。ヘッド部は、ベース基板となるアクリル板上に通電体24を固定して載置して、その周囲に高電圧用導線28を配置して、樹脂等の外装体26内に組み込まれている。なお、図6及び図8の高電位導入プローブ20に発熱体を組み込む場合は、プローブもしくはヘッド部に通電体の他に発熱体を組み込むことで得られる。FIG. 8 is a schematic cross-sectional view of the head portion of another high potential introduction probe. The head portion is mounted in an exterior body 26 made of resin or the like, with a current-carrying body 24 fixed and placed on an acrylic plate serving as a base substrate, and a high-voltage conductive wire 28 disposed around the head. 6 and 8 can be obtained by incorporating a heating element in addition to the current-carrying element in the probe or the head portion.

図9は、図8の高電位導入プローブの概略平面図を示す。高電位導入プローブ20は、高電位導入形成回路を組込んだ握持部22と楕円形状のヘッド部21とを備える。ヘッド部21に通電体24が組み込まれており、電位導入形成回路30の入出力端子44、46と通電体24の高電位導入用通電回路32とは高電圧用導線28で接続されている。高電圧用導線28は、ヘッド部21の楕円形状に沿って配設されている。FIG. 9 shows a schematic plan view of the high potential introduction probe of FIG. The high potential introduction probe 20 includes a gripping portion 22 and an elliptical head portion 21 incorporating a high potential introduction forming circuit. A current-carrying body 24 is incorporated in the head portion 21, and input / output terminals 44 and 46 of the potential introduction forming circuit 30 and a high-potential introduction current-carrying circuit 32 of the current conduction body 24 are connected by a high-voltage conductor 28. The high voltage conducting wire 28 is disposed along the elliptical shape of the head portion 21.

図10は、高電位導入プローブの高電位導入形成回路及び高電位導入用通電回路を示す。高電位導入形成回路30は、発振回路36と、コンデンサ37と、高電位生成トランス38とを備える。電源本体から低電圧用コード17を介して高電位導入プローブの電源入力端子34に入った12ボルトの直流電圧は、インバータトランジスタからなる発振回路36を駆動して高周波45kHzら58kHz、この好ましくは55〜60kHzを出力し、そしてコンデンサ37を介して該出力により高周波高電位生成トランス38を駆動して200V〜800Vに昇圧された高電位を出力する。さらにインバータトランジスタ36が同時に駆動するのを防ぐためのチョークコイル40と、高電位導入形成回路30が動作時に点灯するLED42とを備える。高電位導入形成回路30からの高電圧出力の出力端44と導電体24の入力端46とが高電圧用導線28を介して接続され、高電位が通電体24に印加される。高電位生成トランス38は、その入力端子を前記アース電位形成部側に、その出力端子を高出力側に配置する。アース電位形成部23は、高電位導入形成回路30の高電位生成トランス38と電源入力端子34との間の低電圧側の手で握持する領域に形成される。FIG. 10 shows a high potential introduction forming circuit and a high potential introduction energizing circuit of the high potential introduction probe. The high potential introduction forming circuit 30 includes an oscillation circuit 36, a capacitor 37, and a high potential generation transformer 38. The 12 volt DC voltage that has entered the power input terminal 34 of the high potential introducing probe from the power supply main body via the low voltage cord 17 drives the oscillation circuit 36 composed of an inverter transistor to have a high frequency of 45 kHz to 58 kHz, preferably 55 ˜60 kHz is output, and the high frequency high potential generating transformer 38 is driven by the output via the capacitor 37 to output a high potential boosted to 200V to 800V. Furthermore, a choke coil 40 for preventing the inverter transistor 36 from being driven at the same time, and an LED 42 that is lit during operation of the high potential introduction forming circuit 30 are provided. The output terminal 44 of the high voltage output from the high potential introduction circuit 30 and the input terminal 46 of the conductor 24 are connected via the high voltage conductor 28, and a high potential is applied to the energizing body 24. The high potential generating transformer 38 has an input terminal on the ground potential forming unit side and an output terminal on the high output side. The ground potential forming unit 23 is formed in a region held by the hand on the low voltage side between the high potential generating transformer 38 and the power input terminal 34 of the high potential introduction forming circuit 30.

図11は、太陽電池を組み込んだ高電位導入プローブの高電位導入形成回路の駆動を行うための回路を示す。
太陽電池を組み込んだ回路は、太陽電池60の電力を蓄電するための蓄電用コンデンサ62と、定電圧用ダイオード64と、逆流防止ダイオード66と、出力用スイッチ68とを備え、太陽電池の出力は、蓄電用コンデンサ62を介してインバータで構成されるトランジスタからなる発振回路36に接続されている。なお、高電位導入プローブの高電位導入形成回路30の駆動は、上記図10と説明と同じであるので省略する。
FIG. 11 shows a circuit for driving a high potential introduction forming circuit of a high potential introduction probe incorporating a solar cell.
The circuit incorporating the solar cell includes a storage capacitor 62 for storing the electric power of the solar cell 60, a constant voltage diode 64, a backflow prevention diode 66, and an output switch 68. The output of the solar cell is as follows. The oscillation circuit 36 is composed of a transistor composed of an inverter through a storage capacitor 62. The driving of the high-potential introduction forming circuit 30 of the high-potential introduction probe is the same as that in FIG.

図12は、他の実施例を示す高電位導入プローブの内部構造の配置概略図である。該図は、上部カバー74、下部カバー76を備え、上部カバーには、電位動作を表示する電位動作表示用のLED42と、アース電位形成部23を構成するアルミ箔を配設している。下部カナー76の内部にはヘッド部21に微振動を与えるための振動モータ70が、ヘッド部21の下方位置に配設されている。振動モータは、駆動源である下部カバー内に配設されたDC電位及びモータ用トランスに接続されている。この下部カバー内には、上述した高電位生成トランス38、アース電位形成部23であるアルミ箔を配設している。  FIG. 12 is an arrangement schematic diagram of the internal structure of a high-potential introduction probe showing another embodiment. The figure includes an upper cover 74 and a lower cover 76. An LED 42 for displaying a potential operation and an aluminum foil constituting the ground potential forming unit 23 are disposed on the upper cover. Inside the lower canner 76, a vibration motor 70 for giving fine vibration to the head portion 21 is disposed at a position below the head portion 21. The vibration motor is connected to a DC potential and a motor transformer disposed in a lower cover as a drive source. In the lower cover, the above-described high potential generating transformer 38 and the aluminum foil serving as the ground potential forming portion 23 are disposed.

美顔のマッサージ、皮膚のマッサージ、肩や腰の疲労改善、Facial massage, skin massage, shoulder and lower back fatigue,

電源本体10
通電体11
通電導子12
高電圧用コード13
高周波・高圧発生回路14
発熱体15
温熱用ヒータ回路16
低電圧用コード17
特殊コード18
フィンガー・ガード19
高電位導入プローブ20
ヘッド部21
握持部22
アース電位形成部23
通電体24
電極25
外装体26
皮膚27
高圧用導線28
高電位導入回路30
高電位導入用導電体回路32
電源入力端34
発振回路36
コンデンサ37
高電位生成トランス38
チョークコイル40
LED42
出力端44
入力端46
デジタルサーモセンサ48
サーモスタット50
抵抗52
太陽電池60
蓄電用コンデンサ62
定電圧用ダイオード64
逆流防止ダイオード66
出力用スイッチ68
振動モータ70
DC電位及びモータ用トランス72
上部カバー74
下部カバー76
Power supply body 10
Conductor 11
Conductive conductor 12
High voltage cord 13
High frequency / high pressure generation circuit 14
Heating element 15
Heater circuit 16 for heating
Low voltage cord 17
Special code 18
Finger guard 19
High potential introduction probe 20
Head unit 21
Grip part 22
Earth potential forming part 23
Conductor 24
Electrode 25
Exterior body 26
Skin 27
High pressure lead 28
High potential introduction circuit 30
Conductor circuit 32 for introducing high potential
Power input 34
Oscillation circuit 36
Capacitor 37
High potential generation transformer 38
Choke coil 40
LED42
Output end 44
Input terminal 46
Digital thermo sensor 48
Thermostat 50
Resistance 52
Solar cell 60
Storage capacitor 62
Constant voltage diode 64
Backflow prevention diode 66
Output switch 68
Vibration motor 70
DC potential and motor transformer 72
Top cover 74
Lower cover 76

Claims (8)

電源本体と、高電位導入プローブとを備え、前記電源本体と前記高電位導入プローブの電源入力端とは低電圧用コードを介して接続され、かつ前記高電位導入プローブは、入力端子に印加される電圧により駆動して高周波を出力する発振回路と、該発振回路に接続されて200V〜800Vに昇圧された高電位を出力するための高電位生成トランスとを備える高電位導入形成回路とを備え、該高電位導入形成回路からの高電圧出力を高電圧用導線を介してヘッド部の通電導子に印加し、かくして高電位導入形成回路と通電導子との間が高電位側となり、一方高電位導入形成回路と電源入力端との間が低電圧側となり、人体の表面に集中して高電位を導入してなる高電位導入プローブ装置。A power source body and a high potential introduction probe; the power source body and a power input end of the high potential introduction probe are connected via a low voltage cord; and the high potential introduction probe is applied to an input terminal. A high-potential introduction forming circuit including an oscillation circuit that is driven by a voltage to output a high frequency, and a high-potential generation transformer that is connected to the oscillation circuit and outputs a high potential boosted to 200V to 800V. The high-voltage output from the high-potential introduction forming circuit is applied to the current-carrying conductor of the head portion via the high-voltage conductor, and thus the high-potential side is between the high-potential introduction-forming circuit and the current-carrying conductor, A high-potential introduction probe device in which a high-potential introduction forming circuit and a power supply input end are on a low-voltage side, and a high potential is introduced concentrated on the surface of the human body. 前記高電位生成トランスは、前記高電位導入プローブの入力端子を電源入力端側に、その出力端子を前記通電体側に配置することを特徴とする請求項1記載の高電位導入高電位導入プローブ装置。2. The high-potential introduction high-potential introduction probe device according to claim 1, wherein the high-potential generation transformer has an input terminal of the high-potential introduction probe disposed on a power input end side and an output terminal disposed on the energizer side. . 前記高電位生成トランスは、高周波45kHzから58kHz、この好ましくは55〜60kHzで駆動して200V〜800Vに昇圧された高電位を出力することを特徴とする請求項1記載の高電位導入プローブ装置。2. The high-potential introduction probe device according to claim 1, wherein the high-potential generation transformer outputs a high potential boosted to 200V to 800V by driving at a high frequency of 45 kHz to 58 kHz, preferably 55 to 60 kHz. 前記通電導子は、前記高電位導入プローブに連結されていることを特徴とする請求項1記載の高電位導入プローブ装置。The high-potential introduction probe device according to claim 1, wherein the conducting conductor is connected to the high-potential introduction probe. 前記高電位側と前記低電圧側との境界となる高電位生成トランスが配置される位置にフィンガー・ガイドを設けることを特徴とする請求項1記載の高電位導入プローブ装置。2. The high-potential introduction probe device according to claim 1, wherein a finger guide is provided at a position where a high-potential generation transformer serving as a boundary between the high-potential side and the low-voltage side is disposed. 前記電源入力端と前記高電位生成トランスの入力端子との間にアース電位形成部が形成され、該アース電位形成部に握持部を設けることを特徴とする請求項1記載の高電位導入プローブ装置。2. The high potential introduction probe according to claim 1, wherein a ground potential forming portion is formed between the power input end and an input terminal of the high potential generating transformer, and a grip portion is provided in the ground potential forming portion. apparatus. 前記通電体は、樹脂等の外装体の中に設けられており、該通電体から外装体表面までの間隔は、2mm〜5mmを有することを特徴とする請求項1記載の高電位導入プローブ装置。2. The high-potential introduction probe device according to claim 1, wherein the current-carrying body is provided in an exterior body such as a resin, and a distance from the current-carrying body to the exterior body surface is 2 mm to 5 mm. . 前記前記高電位導入プローブは、前記ヘッド部を振動させるための振動モータを備えることを特徴とする請求項1記載の高電位導入プローブThe high-potential introduction probe according to claim 1, wherein the high-potential introduction probe includes a vibration motor for vibrating the head unit.
JP2010244620A 2009-10-16 2010-10-14 High potential introducing probe device Pending JP2011101795A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010244620A JP2011101795A (en) 2009-10-16 2010-10-14 High potential introducing probe device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009254428 2009-10-16
JP2009254428 2009-10-16
JP2010244620A JP2011101795A (en) 2009-10-16 2010-10-14 High potential introducing probe device

Publications (1)

Publication Number Publication Date
JP2011101795A true JP2011101795A (en) 2011-05-26

Family

ID=44192423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010244620A Pending JP2011101795A (en) 2009-10-16 2010-10-14 High potential introducing probe device

Country Status (1)

Country Link
JP (1) JP2011101795A (en)

Similar Documents

Publication Publication Date Title
JP6491382B2 (en) High frequency beauty treatment equipment
KR101194560B1 (en) Cosmetic container with massage device attached to the lower part using magnet
KR102546342B1 (en) Galvanic massage apparatus
KR101772886B1 (en) Abdominal obesity management device and method of driving abdominal obesity management device
JP2020028654A (en) Cosmetic apparatus
KR20180043015A (en) galvanic massager
KR101488805B1 (en) Electrode Unit for High Frequency Treatment Apparatus
WO2014192307A1 (en) Ultrasonic vibration beauty appliance
KR101125662B1 (en) Treatment device using needle and moxibustion
JP2008178523A (en) Ultrashortwave therapy apparatus
KR100685445B1 (en) Apparatus for rhinitis curing
JP7012228B2 (en) Beauty equipment
KR200414456Y1 (en) apparatus for rhinitis curing
JP2011245093A (en) Ultrasonic constipation relief device
KR102092793B1 (en) Beautifying apparatus using plasma
JP3217111U (en) Electrical stimulator
JP2011101795A (en) High potential introducing probe device
TWI484937B (en) Electrically-driven module for stimulating skin
JP6703695B2 (en) Muscle stimulator
KR200388350Y1 (en) electrode holder for high frequency medical machine
JP2001309987A (en) Potential therapeutic appliance with function for discharging minus ion
KR20090063521A (en) Diathermic treatment apparatus with a self-handle
RU130502U1 (en) DEVICE FOR TREATMENT OF PROSTATITIS
KR100924948B1 (en) Coil-Probe for a magnetic curer formed with a metal plate
JP2004329584A (en) Electromagnetic health promoter