JP2011101163A - Capacitance type electromechanical conversion device - Google Patents

Capacitance type electromechanical conversion device Download PDF

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JP2011101163A
JP2011101163A JP2009253945A JP2009253945A JP2011101163A JP 2011101163 A JP2011101163 A JP 2011101163A JP 2009253945 A JP2009253945 A JP 2009253945A JP 2009253945 A JP2009253945 A JP 2009253945A JP 2011101163 A JP2011101163 A JP 2011101163A
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electrode
support
support portion
vibration film
electrodes
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Kazunari Fujii
一成 藤井
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Canon Inc
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Canon Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a capacitance type electromechanical conversion device capable of improving sensitivity. <P>SOLUTION: The capacitance type electromechanical conversion device includes a cell having: a first electrode 2; a second electrode 4 disposed, by facing the first electrode, with an air gap 3 between the first electrode and the second electrode; and a support for supporting the second electrode in a movable manner. The support includes: a first support 6 for supporting the outer circumferential edge part of the second electrode 4; and a second support 7 for supporting a part inside the outer circumferential edge part of the second electrode 4. A part corresponding to the second support 7 in the direction in which the first and second electrodes face each other is located in a region where at least one of the first electrode 2 and the second electrode 4 does not exist. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、静電容量型超音波変換装置などの静電容量型電気機械変換装置に関する。 The present invention relates to a capacitive electromechanical transducer such as a capacitive ultrasonic transducer.

近年、マイクロマシンニング工程を用いた容量型電気機械変換装置が盛んで研究されている。通常の容量型電気機械変換装置は、下部電極と所定の間隔を保って支持された振動膜と該振動膜の表面に配設される上部電極とを有するセルを含む。これは、例えば、容量型超音波変換装置(CMUT:Capacitive-Micromachined-Ultrasonic-Transducer)などとして用いられる。この様な変換装置は、軽量の振動膜を用いて、電気信号から超音波への変換と超音波から電気信号への変換のうちの少なくとも一方を行うものであり、液中及び空気中でも優れた広帯域特性を持つものが容易に得られる。この変換装置を利用すると、従来の医用診断モダリティより高精度な超音波診断が可能となるため、有望な技術として注目されつつある。この変換装置の動作原理は次の様なものである。超音波を送信する際には、下部電極と上部電極間に、DC電圧に微小なAC電圧を重畳した電圧を印加する。これにより、振動膜が振動し超音波が発生する。超音波を受信する際には、振動膜が超音波により変形するので、変形に伴う下部電極と上部電極間の容量の変化により信号を検出する。通常の変換装置では、複数のセルが並列に電気的に接続されたエレメント(素子)が複数個配置される。 In recent years, capacitive electromechanical transducers using a micromachining process have been actively studied. A typical capacitive electromechanical transducer includes a cell having a lower electrode, a vibrating membrane supported at a predetermined interval, and an upper electrode disposed on the surface of the vibrating membrane. This is used, for example, as a capacitive ultrasonic transducer (CMUT: Capacitive-Micromachined-Ultrasonic-Transducer). Such a conversion device performs at least one of the conversion from an electric signal to an ultrasonic wave and the conversion from an ultrasonic wave to an electric signal by using a lightweight vibrating membrane, and is excellent in liquid and air. Those with wide band characteristics can be easily obtained. When this conversion device is used, ultrasonic diagnostics with higher accuracy than conventional medical diagnostic modalities are possible, and therefore, it is attracting attention as a promising technology. The principle of operation of this converter is as follows. When transmitting ultrasonic waves, a voltage obtained by superimposing a minute AC voltage on a DC voltage is applied between the lower electrode and the upper electrode. As a result, the vibrating membrane vibrates and ultrasonic waves are generated. When receiving the ultrasonic wave, the vibration film is deformed by the ultrasonic wave, and thus a signal is detected by a change in capacitance between the lower electrode and the upper electrode accompanying the deformation. In a normal converter, a plurality of elements (elements) in which a plurality of cells are electrically connected in parallel are arranged.

この様な容量型超音波変換装置では、その電気機械変換性能を高めるために、電極間の間隔を小さくすることが望ましい。そうした目的で、電極間の間隔を小さくするために、電極間の空隙内に支柱を設け、振動膜を支柱に接触させて電極間距離を狭くする方法が提案されている(特許文献1参照)。 In such a capacitive ultrasonic transducer, it is desirable to reduce the distance between the electrodes in order to improve the electromechanical conversion performance. For such a purpose, in order to reduce the distance between the electrodes, a method has been proposed in which struts are provided in the gaps between the electrodes and the distance between the electrodes is reduced by bringing the vibrating membrane into contact with the struts (see Patent Document 1). .

US−A1−20060004289明細書US-A1-20060004289 Specification

前述した様に、電極間の空隙内に支柱を設け電極間の間隔を小さくすることで電気機械変換性能ないし感度が向上する。しかしながら、容量型電気機械変換装置では更なる高感度化が求められている。電極間の空隙内に支柱を設け振動膜を支柱に接触させる構成では、支柱に近接した部分の振動膜は入力波に対して振動しないか或いは少ししか振動しない。そのため、その部分の静電容量は寄生容量となり感度向上の制約となる可能性がある。 As described above, the electromechanical conversion performance or sensitivity is improved by providing the support in the gap between the electrodes and reducing the distance between the electrodes. However, a further increase in sensitivity is required for the capacitive electromechanical transducer. In the configuration in which the support is provided in the gap between the electrodes and the vibration film is in contact with the support, the vibration film in the portion adjacent to the support does not vibrate or vibrates slightly with respect to the input wave. For this reason, the electrostatic capacitance in that portion may become a parasitic capacitance, which may limit sensitivity improvement.

上記課題に鑑み、本発明の静電容量型電気機械変換装置は、第1の電極と、前記第1の電極と対向し空隙を隔てて配設された第2の電極と、前記第2の電極を可動に支持するための支持部とを有するセルを備える。前記支持部は、前記第2の電極の外周縁部を支持するための第1の支持部と、前記第2の電極の外周縁部の内側の部分を支持するための第2の支持部とを含む。そして、前記第1及び第2の電極が対向する方向において前記第2の支持部に対応する部分が、前記第1及び第2の電極のうちの少なくとも一方を欠いた領域になっている。 In view of the above problems, a capacitance-type electromechanical transducer according to the present invention includes a first electrode, a second electrode that faces the first electrode and is spaced from the first electrode, and the second electrode. And a cell having a support portion for movably supporting the electrode. The support portion includes a first support portion for supporting the outer peripheral edge portion of the second electrode, and a second support portion for supporting an inner portion of the outer peripheral edge portion of the second electrode. including. A portion corresponding to the second support portion in a direction in which the first and second electrodes face each other is a region lacking at least one of the first and second electrodes.

本発明の静電容量型電気機械変換装置では、電極間の空隙内に第2の支持部を設けるので、電極間の間隔を小さくすることが可能となり、入力波に対する電極間の容量変化を大きくすることが可能となる。また、第2の支持部に対応する部分が、第1及び第2の電極のうちの少なくとも一方を欠いた領域になっているので、入力波に対して振動しないか或いは少ししか振動しない部分の寄生容量を減少でき、装置の感度を更に向上させることができる。 In the capacitive electromechanical transducer of the present invention, since the second support portion is provided in the gap between the electrodes, the interval between the electrodes can be reduced, and the capacitance change between the electrodes with respect to the input wave is increased. It becomes possible to do. In addition, since the portion corresponding to the second support portion is a region lacking at least one of the first and second electrodes, the portion that does not vibrate or slightly vibrates with respect to the input wave. Parasitic capacitance can be reduced and the sensitivity of the device can be further improved.

本発明の実施形態の容量型電気機械変換装置の断面と上面を示す図。The figure which shows the cross section and upper surface of the capacitive electromechanical transducer of embodiment of this invention. 本発明の他の実施形態の容量型電気機械変換装置の断面とA−A断面を示す。The cross section and AA cross section of the capacitive electromechanical transducer of other embodiment of this invention are shown.

以下、本発明の実施形態について説明する。本発明の静電容量型電気機械変換装置において重要なことは、前記第1及び第2の電極が対向する方向において前記第2の支持部に対応する部分が、第1及び第2の電極のうちの少なくとも一方を欠いた領域になっていることである。この考え方に基づき、本発明の容量型電気機械変換装置の基本的な形態は、上述した様な構成を有する。この基本的な形態を基に、次に述べる様な実施形態が可能である。 Hereinafter, embodiments of the present invention will be described. What is important in the capacitive electromechanical transducer of the present invention is that the portion corresponding to the second support portion in the direction in which the first and second electrodes oppose each other is the first and second electrodes. It is an area lacking at least one of them. Based on this concept, the basic form of the capacitive electromechanical transducer of the present invention has the configuration as described above. On the basis of this basic form, the following embodiments are possible.

例えば、第2の電極(後述の上部電極)を支持する振動膜を設け、第1の支持部は振動膜の外周縁部を支持することで第2の電極の外周縁部を支持し、第2の支持部は振動膜の外周縁部の内側の部分を支持することで第2の電極の外周縁部の内側の部分を支持する構成とできる。この場合、振動膜は絶縁材料で形成される。振動膜が第2の電極を兼ねる構成とすることもできる。この場合、第1の支持部は第2の電極の外周縁部を、直接、支持し、第2の支持部は第2の電極の外周縁部の内側の部分を、直接、支持する。この構成では、前記第2の支持部に対応する部分には必ず第2の電極が存在するので、この部分の第1の電極(後述の下部電極)を必ず省略することとなる。 For example, a vibrating membrane that supports a second electrode (upper electrode described later) is provided, and the first supporting portion supports the outer peripheral edge of the second electrode by supporting the outer peripheral edge of the vibrating membrane, The second support portion can support the inner portion of the outer peripheral edge portion of the second electrode by supporting the inner portion of the outer peripheral edge portion of the vibration film. In this case, the vibration film is formed of an insulating material. The vibration film may also serve as the second electrode. In this case, the first support portion directly supports the outer peripheral edge portion of the second electrode, and the second support portion directly supports a portion inside the outer peripheral edge portion of the second electrode. In this configuration, since the second electrode always exists in the portion corresponding to the second support portion, the first electrode (lower electrode described later) in this portion is necessarily omitted.

また、第1の電極を基板上に配設する構成とすることもできる。この場合、基板は、通常、絶縁材料で形成される。基板を導電体材料で形成して、第1の電極を兼ねる構成とすることもできる。この構成では、前記第2の支持部に対応する部分には必ず第1の電極が存在するので、この部分の第2の電極を必ず省略することとなる。また、第1及び第2の電極のうちの少なくとも一方を欠いた領域は、第2の支持部に接する部分にのみ設けてもよいが、該部分を含んでその近傍に設けることもできる。重要なことは、殆ど不動な第2の支持部の領域において第1及び第2の電極が対向して寄生容量を発生する構成にしない様にすることであり、こうした条件を満たせば、第1及び第2の電極のうちの少なくとも一方を欠く領域の形態は問わない。また、複数のセルに亘り振動部が連続的に形成されていて、その可動部が振動膜、その不動部が第1の支持部となる様に構成することもできる。この際、更に第2の支持部も振動膜と連続して形成することができる。こうした構成は、サーフェスマイクロマシニングを利用する作製方法で容易に作製することができる。 Alternatively, the first electrode may be arranged on the substrate. In this case, the substrate is usually made of an insulating material. The substrate may be formed of a conductor material so that it also serves as the first electrode. In this configuration, since the first electrode always exists in the portion corresponding to the second support portion, the second electrode in this portion is necessarily omitted. In addition, the region lacking at least one of the first and second electrodes may be provided only in a portion in contact with the second support portion, but may be provided in the vicinity including the portion. What is important is to avoid a configuration in which the first and second electrodes oppose each other and generate parasitic capacitance in the region of the second support portion that is almost stationary. The form of the region lacking at least one of the second electrodes is not limited. Further, the vibration part may be continuously formed over a plurality of cells, the movable part may be a vibration film, and the non-moving part may be a first support part. At this time, the second support portion can also be formed continuously with the vibrating membrane. Such a configuration can be easily manufactured by a manufacturing method using surface micromachining.

感度向上の観点から、第2の電極又は振動膜は、第1の電極側の方向に撓んで凹型になっているのが好ましい。こうした構成は、第1及び第2の電極間の空隙の圧力を大気圧以下にしたり、電圧印加部で第1及び第2の電極間に電圧を印加して静電引力により第2の電極又は振動膜の形状を調整したりすることで達成される。電圧印加部は、第2の電極又は振動膜の最下部が第2の支持部よりも低くなる様に電圧を調整できる様になっているのが好ましい。 From the viewpoint of improving sensitivity, it is preferable that the second electrode or the vibrating membrane be bent in the direction toward the first electrode to be concave. In such a configuration, the pressure of the gap between the first and second electrodes is reduced to atmospheric pressure or less, or the voltage application unit applies a voltage between the first and second electrodes and electrostatically attracts the second electrode or This is achieved by adjusting the shape of the diaphragm. It is preferable that the voltage application unit can adjust the voltage so that the lowermost part of the second electrode or the vibration film is lower than the second support unit.

また、前述した様に、通常、容量型電気機械変換装置は、複数の前記セルが電気的に接続された構成である素子(エレメント)を複数有する。具体的には、全てのエレメントの第2の電極は接続配線で接続されて電気回路に接続されているが、第1の電極は互いにエレメント毎に独立に電気回路に接続されることにより、エレメント毎に電気的に分離した出力信号を得ることができる。ただし、このような構成に限らず、エレメント毎に出力信号を得ることができればどのような構成でもよい。こうした構成により、音波、超音波、音響波、光音響波などの弾性波を第1及び第2の電極間の静電容量の変化で検出できる。また、第1及び第2の電極間に変調電圧を印加して第2の電極又は振動膜を振動させることにより、超音波などの弾性波を発することができる。 As described above, the capacitive electromechanical transducer usually has a plurality of elements having a configuration in which a plurality of the cells are electrically connected. Specifically, the second electrodes of all the elements are connected to the electric circuit by connection wiring, but the first electrode is connected to the electric circuit independently for each element, so that the element An output signal that is electrically separated for each time can be obtained. However, the configuration is not limited to this, and any configuration may be used as long as an output signal can be obtained for each element. With such a configuration, an elastic wave such as a sound wave, an ultrasonic wave, an acoustic wave, or a photoacoustic wave can be detected by a change in capacitance between the first and second electrodes. Further, an elastic wave such as an ultrasonic wave can be generated by applying a modulation voltage between the first and second electrodes to vibrate the second electrode or the vibrating membrane.

本発明の容量型電気機械変換装置で用いられる第2の電極は、次の様な材料で形成できる。即ち、Al、Cr、Ti、Au、Pt、Cu、Ag、W、Mo、Ta、Ni等から選択される導電体、Si等の半導体、AlSi、AlCu、AlTi、MoW、AlCr、TiN、AlSiCu等から選択される合金のうちの少なくとも一材料により形成できる。また、第2の電極は、振動膜の上面、裏面、内部のうちの少なくとも一箇所に設けるか、若しくは、前述した様に振動膜を導電体や半導体で形成する場合は振動膜が第2の電極を兼ねる構造とすることもできる。本発明で用いられる第1の電極も、第2の電極と同様の導電体や半導体等により形成することができる。第1の電極と第2の電極の材料は異なっていてもよい。前述した様に、基板がシリコン等の半導体基板などである場合、基板が第1の電極を兼ねることもできる。 The second electrode used in the capacitive electromechanical transducer of the present invention can be formed of the following material. That is, a conductor selected from Al, Cr, Ti, Au, Pt, Cu, Ag, W, Mo, Ta, Ni, etc., a semiconductor such as Si, AlSi, AlCu, AlTi, MoW, AlCr, TiN, AlSiCu, etc. It can be formed of at least one material selected from the group consisting of alloys. Further, the second electrode is provided in at least one of the top surface, the back surface, and the inside of the vibration film, or when the vibration film is formed of a conductor or a semiconductor as described above, the vibration film is the second film. A structure that also serves as an electrode may be employed. The first electrode used in the present invention can also be formed using the same conductor, semiconductor, or the like as the second electrode. The materials of the first electrode and the second electrode may be different. As described above, when the substrate is a semiconductor substrate such as silicon, the substrate can also serve as the first electrode.

以下、本発明の容量型電気機械変換装置の実施形態を図を用いて説明する。
(第1の実施形態)
図1は第1の実施形態の容量型電気機械変換装置を示す。図1に示す様に、本実施形態の容量型電気機械変換装置のセルは、基板1に配設された下部電極2と、下部電極2と対向し空隙3を隔てて配設された上部電極4と、上部電極4を支持する振動膜5と、振動膜5の外周縁部を支持する第1の支持部6を有する。本実施形態では、振動膜5は絶縁材料である。振動膜5はSiNにより形成されるが、その他の絶縁材料でもよい。第1の支持部6はSiNにより形成されるが、その他の絶縁材料でもよい。図1(b)に示す様に、振動膜5は第1の支持部6により円形状に可動に支持されているが、楕円状や多角形状などとしてもよい。第1の支持部6により円形状に支持される振動膜5の直径は10μmから100μmの範囲が好ましく、振動膜5の膜厚は100nmから800nmの範囲が好ましい。第1の支持部6の高さは50nmから300nmの範囲が好ましい。容量型電気機械変換装置は、電極2、4間の空隙3のギャップを狭くすることにより、入力波に対する振動膜5の変化による容量変化が大きくなるため、高感度化を実現することができる。
Hereinafter, an embodiment of a capacitive electromechanical transducer of the present invention will be described with reference to the drawings.
(First embodiment)
FIG. 1 shows a capacitive electromechanical transducer according to a first embodiment. As shown in FIG. 1, the cell of the capacitive electromechanical transducer of this embodiment includes a lower electrode 2 disposed on a substrate 1 and an upper electrode disposed opposite to the lower electrode 2 with a gap 3 therebetween. 4, a vibration film 5 that supports the upper electrode 4, and a first support portion 6 that supports the outer peripheral edge of the vibration film 5. In the present embodiment, the vibration film 5 is an insulating material. The vibration film 5 is made of SiN, but other insulating materials may be used. The first support 6 is made of SiN, but other insulating materials may be used. As shown in FIG. 1B, the vibrating membrane 5 is movably supported in a circular shape by the first support portion 6, but may be an elliptical shape or a polygonal shape. The diameter of the vibrating membrane 5 supported in a circular shape by the first support portion 6 is preferably in the range of 10 μm to 100 μm, and the thickness of the vibrating membrane 5 is preferably in the range of 100 nm to 800 nm. The height of the first support 6 is preferably in the range of 50 nm to 300 nm. In the capacitive electromechanical transducer, since the capacitance change due to the change of the vibration film 5 with respect to the input wave is increased by narrowing the gap of the gap 3 between the electrodes 2 and 4, high sensitivity can be realized.

また、本実施形態の容量型電気機械変換装置では、基板1上のセルの中央部に円柱状の第2の支持部7が配置され、第2の支持部7は第1の支持部6の高さに比べ低く設定されている。第2の支持部7の直径は1μmから5μmが好ましいが、振動膜5の直径に対して十分小さければよい。第2の支持部7の高さは、第1の支持部6の高さの1/2程度以下が好ましい。また、第2の支持部7もSiNにより形成されるが、その他の絶縁材料でもよい。第2の支持部7は円柱形状が好ましいが、振動膜5の外周縁部の内側の一部を保持できる形状であればどの様なものでもよい。第2の支持部7は基板1上のセルの中央に配置するのが最も望ましいが、その他の位置でも効果を有する。 In the capacitive electromechanical transducer of this embodiment, the columnar second support portion 7 is disposed at the center of the cell on the substrate 1, and the second support portion 7 is the first support portion 6. It is set lower than the height. The diameter of the second support portion 7 is preferably 1 μm to 5 μm, but may be sufficiently small with respect to the diameter of the vibrating membrane 5. The height of the second support portion 7 is preferably about ½ or less of the height of the first support portion 6. Moreover, although the 2nd support part 7 is also formed of SiN, another insulating material may be sufficient. The second support portion 7 is preferably cylindrical, but may be any shape as long as it can hold a part of the inside of the outer peripheral edge portion of the vibration film 5. The second support portion 7 is most preferably arranged at the center of the cell on the substrate 1, but it has an effect at other positions.

空隙3は、振動膜5の上部環境と比べ減圧状態になっており、振動膜5には下部電極2方向に凹型になる様な力が加わる。更に、図示しない電圧印加部は、下部電極2と上部電極4との間に電圧を加えることにより、電極2、4間の静電引力により振動膜5を下部電極2方向に凹型になる様な力を加える。これら2つの力により振動膜5は下部電極2方向に変形するが、下部電極2の中央部に配置した第2の支持部7に振動膜5の中央部が接触するため、振動膜5の形状は図1(a)に示す様に、振動膜5の最下部が第2の支持部7の最高部よりも低くなる。ここで、振動膜5の最下部とは、振動膜5と基板1が最も近い部分であり、第2の支持部7の最高部とは、基板1から最も離れた第2の支持部7の部分である。 The air gap 3 is in a reduced pressure state as compared with the upper environment of the vibration film 5, and a force that makes the vibration film 5 concave in the direction of the lower electrode 2 is applied. Furthermore, a voltage application unit (not shown) applies a voltage between the lower electrode 2 and the upper electrode 4 so that the vibrating membrane 5 becomes concave in the direction of the lower electrode 2 due to electrostatic attraction between the electrodes 2 and 4. Apply power. The vibration film 5 is deformed in the direction of the lower electrode 2 by these two forces. However, since the central portion of the vibration film 5 is in contact with the second support portion 7 disposed in the central portion of the lower electrode 2, the shape of the vibration film 5 is reduced. As shown in FIG. 1A, the lowermost portion of the vibration film 5 is lower than the highest portion of the second support portion 7. Here, the lowest part of the vibration film 5 is a part where the vibration film 5 and the substrate 1 are closest, and the highest part of the second support part 7 is the second support part 7 farthest from the substrate 1. Part.

空隙3の減圧の状態と上記電圧印加部の印加電圧を調整することにより、振動膜5の最下部が下部電極2に近くなり、振動膜5上の上部電極4と下部電極2の間隔を狭くすることができる。従来の容量型電気機械変換装置では、電極間距離が最も狭くなる領域が振動膜中央の1点となる。これに対して、本実施形態では、従来のものと比べ、電極間距離が最小となる領域が広いため、入力波に対する振動膜5の変化による容量変化が大きくなり、高感度化が実現できる。 By adjusting the reduced pressure state of the gap 3 and the applied voltage of the voltage application unit, the lowermost part of the vibration film 5 is close to the lower electrode 2 and the distance between the upper electrode 4 and the lower electrode 2 on the vibration film 5 is narrowed. can do. In the conventional capacitive electromechanical transducer, the region where the distance between the electrodes is the shortest is one point at the center of the diaphragm. On the other hand, in the present embodiment, since the region where the distance between the electrodes is minimum is wide compared to the conventional one, the capacitance change due to the change of the vibration film 5 with respect to the input wave becomes large, and high sensitivity can be realized.

また、容量型電気機械変換装置は、寄生容量の少ない方が高感度化を実現できる。寄生容量とは、入力圧に対して変化しない容量成分のことであり、寄生容量が大きくなると信号ノイズが大きくなる等により感度低下を招く。空隙内部に支持部を設け振動膜に接触させた場合、支持部付近の振動膜は入力波に対して振動しないか少なくしか振動しない。そのため、支持部の近傍の上部電極と下部電極間の容量は寄生容量となる。本実施形態の容量型電気機械変換装置では、第2の支持部7近傍の振動が少ない振動膜5には上部電極4が無い領域が設けられ、且つ上部電極4は振動膜5の最下部付近に配置される。こうして、図1(b)に示す様に、最下部付近にのみ第2の電極である上部電極4があって、ドーナツ型の形状をしている。また、下部電極2も、第2の支持部7に対応する領域には形成されていない。そのため、振動しないか振動が少ない振動膜5の領域の寄生容量を低減できる。 In addition, the capacitive electromechanical transducer can achieve higher sensitivity when the parasitic capacitance is smaller. The parasitic capacitance is a capacitance component that does not change with respect to the input pressure. When the parasitic capacitance increases, the sensitivity of the signal decreases due to an increase in signal noise. When a support part is provided inside the gap and brought into contact with the vibration film, the vibration film in the vicinity of the support part does not vibrate with respect to the input wave or vibrates little. Therefore, the capacitance between the upper electrode and the lower electrode in the vicinity of the support portion becomes a parasitic capacitance. In the capacitive electromechanical transducer of this embodiment, the vibration film 5 with little vibration in the vicinity of the second support portion 7 is provided with a region without the upper electrode 4, and the upper electrode 4 is near the lowermost part of the vibration film 5. Placed in. Thus, as shown in FIG. 1B, the upper electrode 4 as the second electrode is provided only near the lowermost part, and has a donut shape. Further, the lower electrode 2 is not formed in a region corresponding to the second support portion 7. Therefore, the parasitic capacitance in the region of the vibration film 5 that does not vibrate or has little vibration can be reduced.

ここで、上部電極4が無い領域とはドーナツ型の電極の内径の領域である。この領域は、好ましくは、振動膜5と第2の支持部7の接点を中心に、振動膜5の最下部と第2の支持部7の最高部との面内方向距離の10%から50%の長さをドーナツ型の内径半径とした領域である。より好ましくは、振動膜の最下部と第2の支持部の最高部との距離の30%の長さをドーナツ型の内径半径とするのがよい。例えば、第2の支持部7の直径が5μm、高さが50nm、振動膜5の膜厚が100nm、振動膜と第2の支持部の比誘電率が6とすると、第2の支持部7の寄生容量に係る上下電極間容量Cは次の式1より、約0.007pFとなる。
C=εεS/d 式1
ここで、εは真空の誘電率、εは前記比誘電率、Sは電極面積、dは電極間距離とする。この第2の支持部7における上下電極間容量は、全体の容量に対して10%以上と大きい。本実施形態の様に第2の支持部7における上下電極を無くすことにより、この寄生容量の増加を防ぐことができる。
Here, the region without the upper electrode 4 is a region having an inner diameter of the donut-shaped electrode. This region is preferably 10% to 50% of the in-plane direction distance between the lowest part of the vibration film 5 and the highest part of the second support part 7 around the contact point of the vibration film 5 and the second support part 7. % Is the region where the inner diameter radius of the donut is taken. More preferably, the length of 30% of the distance between the lowest part of the vibrating membrane and the highest part of the second support part is the donut-shaped inner radius. For example, when the diameter of the second support portion 7 is 5 μm, the height is 50 nm, the film thickness of the vibration film 5 is 100 nm, and the relative dielectric constant between the vibration film and the second support portion is 6, the second support portion 7. The capacitance C between the upper and lower electrodes related to the parasitic capacitance is about 0.007 pF from the following equation 1.
C = ε 0 ε r S / d Equation 1
Here, ε 0 is the dielectric constant of vacuum, ε r is the relative dielectric constant, S is the electrode area, and d is the distance between the electrodes. The capacity between the upper and lower electrodes in the second support portion 7 is as large as 10% or more with respect to the entire capacity. By eliminating the upper and lower electrodes in the second support portion 7 as in the present embodiment, this increase in parasitic capacitance can be prevented.

この様に、第2の支持部と第2の支持部近傍の上下電極を設けないことにより、変化が少ない振動膜の領域の寄生容量を低減でき、変化が大きい振動膜の領域のみの容量を大きくすることができる。これにより、高感度な容量型電気機械変換装置を実現することができる。本実施形態では、1つの第2の支持部7を基板1上に配置したが、複数本配置しても同様の効果が得られる。この場合、複数本の第2の支持部の全てに対応する部分について、上記の如き何れかの電極を無くした領域とするのが好ましいが、少なくとも1つの第2の支持部に対応する部分についてのみ上記の如き何れかの電極を無くした領域としてもよい。また、第2の支持部7の領域の上下の電極を無くしているが、何れか一方の電極を無くした構成にしても同様の効果が得られる。 Thus, by not providing the second support part and the upper and lower electrodes in the vicinity of the second support part, it is possible to reduce the parasitic capacitance in the vibration film region with little change, and to reduce the capacitance only in the vibration film region with a large change. Can be bigger. Thereby, a highly sensitive capacitive electromechanical transducer can be realized. In the present embodiment, one second support portion 7 is arranged on the substrate 1, but the same effect can be obtained even if a plurality of second support portions 7 are arranged. In this case, it is preferable that the portion corresponding to all of the plurality of second support portions be a region in which any of the electrodes as described above is eliminated, but the portion corresponding to at least one second support portion. Only one of the above-described regions may be eliminated. Further, although the upper and lower electrodes in the region of the second support portion 7 are eliminated, the same effect can be obtained even if one of the electrodes is eliminated.

(第2の実施形態)
図2を用いて第2の実施形態の容量型電気機械変換装置を説明する。図2に示す様に、本実施形態の容量型電気機械変換装置のセルは、絶縁材料の基板1に配設された下部電極2と、下部電極2と対向し空隙3を隔てて配設された振動膜5と、振動膜5を支持する第1の支持部6を有する。また、振動膜5上には円形状の上部電極4が配設されている。振動膜5を導体で形成して、振動膜5が上部電極の役割も兼ねる様にしてもよい。この場合は、上部電極4を省略できる。また、振動膜5上の上部電極4の形状も、下記の下部電極2の形状に合わせてドーナツ型にしてもよい。
(Second Embodiment)
A capacitive electromechanical transducer according to the second embodiment will be described with reference to FIG. As shown in FIG. 2, the cell of the capacitive electromechanical transducer of this embodiment is provided with a lower electrode 2 disposed on a substrate 1 made of an insulating material, and opposed to the lower electrode 2 with a gap 3 therebetween. The vibration film 5 and the first support portion 6 that supports the vibration film 5 are provided. A circular upper electrode 4 is disposed on the vibration film 5. The vibration film 5 may be formed of a conductor so that the vibration film 5 also serves as an upper electrode. In this case, the upper electrode 4 can be omitted. Further, the shape of the upper electrode 4 on the vibration film 5 may be a donut shape according to the shape of the lower electrode 2 described below.

振動膜5が上部電極の役割も兼ねる構成の場合、振動膜5はSiなどで形成できるが、その他の導電体材料でもよい。また、第1の支持部6も低抵抗のSiなどにより形成できるが、その他の導電体材料でもよい。第1の支持部6による振動膜5の支持形態、振動膜5の直径や膜厚、第1の支持部6の高さなどについては、第1の実施形態で説明した通りである。 In the case where the vibration film 5 also serves as the upper electrode, the vibration film 5 can be formed of Si or the like, but other conductor materials may be used. The first support portion 6 can also be formed of low resistance Si or the like, but may be other conductive material. The support form of the vibration film 5 by the first support part 6, the diameter and film thickness of the vibration film 5, the height of the first support part 6, and the like are as described in the first embodiment.

また、本実施形態では、第2の支持部7はSi0により形成されるが、その他の絶縁材料でもよい。第2の支持部7近傍には下部電極2が無い領域が設けられ、下部電極2は振動膜5の最下部付近に配置され、図2(b)に示す様にドーナツ型の形状をしている。即ち、第2の電極である上部電極4の最下部付近に対向する部分にのみ第1の電極である下部電極2がある。そのため、変化が少ない領域の振動膜5の寄生容量を低減できる。下部電極が無い領域とはドーナツ型の電極2の内径の領域であり、好ましくは、基板1と第2の支持部7の接点を中心に、振動膜5の最下部と第2の支持部7の最高部との面内方向距離の10%から50%の長さをドーナツ型の内径半径とした領域である。より好ましくは、振動膜の最下部と第2の支持部の最高部との距離の30%の長さをドーナツ型の内径半径とするのがよい。例えば、第2の支持部7の直径が5μm、高さが50nm、第2の支持部7の比誘電率が3.7とすると、第2の支持部7の上下電極間容量Cは上記式1より、約0.013pFとなる。ここでも、第2の支持部7の上下電極間容量は全体の容量に対して10%以上と大きい。本実施形態に示す様に第2の支持部7近傍の下部電極を無くすことにより、この寄生容量の増加を防ぐことができる。 In the present embodiment, the second support portion 7 is formed of Si0, but other insulating materials may be used. A region without the lower electrode 2 is provided in the vicinity of the second support portion 7, and the lower electrode 2 is disposed near the lowermost portion of the vibrating membrane 5, and has a donut shape as shown in FIG. 2 (b). Yes. That is, the lower electrode 2 as the first electrode is present only in the portion facing the vicinity of the lowermost portion of the upper electrode 4 as the second electrode. Therefore, it is possible to reduce the parasitic capacitance of the vibration film 5 in a region where the change is small. The region having no lower electrode is a region having an inner diameter of the doughnut-shaped electrode 2, and preferably the lowermost portion of the vibrating membrane 5 and the second support portion 7 around the contact point between the substrate 1 and the second support portion 7. 10 to 50% of the distance in the in-plane direction with the highest part of the doughnut-shaped inner radius. More preferably, the length of 30% of the distance between the lowest part of the vibrating membrane and the highest part of the second support part is the donut-shaped inner radius. For example, when the diameter of the second support portion 7 is 5 μm, the height is 50 nm, and the relative permittivity of the second support portion 7 is 3.7, the capacitance C between the upper and lower electrodes of the second support portion 7 is the above formula. 1 is about 0.013 pF. Again, the capacity between the upper and lower electrodes of the second support portion 7 is as large as 10% or more with respect to the total capacity. By eliminating the lower electrode in the vicinity of the second support portion 7 as shown in the present embodiment, this increase in parasitic capacitance can be prevented.

この様に、本実施形態でも、第2の支持部の近傍に下部電極を設けないことにより、変化が少ない振動膜の領域の寄生容量を低減でき、変化が大きい振動膜の領域のみの容量を大きくすることができる。こうして、高感度な容量型電気機械変換装置を実現できる。 As described above, also in this embodiment, by not providing the lower electrode in the vicinity of the second support portion, the parasitic capacitance in the vibration film region with little change can be reduced, and the capacitance of only the vibration film region with large change can be reduced. Can be bigger. In this way, a highly sensitive capacitive electromechanical transducer can be realized.

1…基板、2…下部電極(第1の電極)、3…空隙、4…上部電極(第2の電極)、5…振動膜、6…第1の支持部、7…第2の支持部 DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 2 ... Lower electrode (1st electrode), 3 ... Space | gap, 4 ... Upper electrode (2nd electrode), 5 ... Vibration film, 6 ... 1st support part, 7 ... 2nd support part

Claims (6)

第1の電極と、前記第1の電極と対向し空隙を隔てて配設された第2の電極と、前記第2の電極を可動に支持するための支持部とを有するセルを備える容量型電気機械変換装置であって、
前記支持部が、前記第2の電極の外周縁部を支持するための第1の支持部と、前記第2の電極の外周縁部の内側の部分を支持するための第2の支持部とを含み、
前記第1及び第2の電極が対向する方向において前記第2の支持部に対応する部分が、前記第1及び第2の電極のうちの少なくとも一方を欠いた領域になっていることを特徴とする静電容量型電気機械変換装置。
Capacitive type comprising a cell having a first electrode, a second electrode opposed to the first electrode and disposed with a gap, and a support part for movably supporting the second electrode An electromechanical converter,
A first support for supporting the outer peripheral edge of the second electrode; and a second support for supporting an inner portion of the outer peripheral edge of the second electrode. Including
A portion corresponding to the second support portion in a direction in which the first and second electrodes face each other is a region lacking at least one of the first and second electrodes. Capacitive electromechanical converter.
前記第2の電極を支持する振動膜が設けられ、
前記第1の支持部は前記振動膜の外周縁部を支持し、前記第2の支持部は前記振動膜の外周縁部の内側の部分を支持することを特徴とする請求項1に記載の静電容量型電気機械変換装置。
A vibrating membrane supporting the second electrode is provided;
The said 1st support part supports the outer-periphery edge part of the said diaphragm, The said 2nd support part supports the part inside the outer-periphery part of the said diaphragm. Capacitance type electromechanical transducer.
前記第2の支持部の高さは前記第1の支持部の高さより低いことを特徴とする請求項1又は2に記載の静電容量型電気機械変換装置。 3. The capacitive electromechanical transducer according to claim 1, wherein a height of the second support portion is lower than a height of the first support portion. 前記第1の電極側の方向に凹型になっている前記第2の電極の最下部が、前記第2の支持部の最高部よりも低いことを特徴とする請求項1から3の何れか1項に記載の静電容量型電気機械変換装置。 The lowermost part of the second electrode which is concave in the direction toward the first electrode is lower than the highest part of the second support part. The capacitance-type electromechanical transducer according to Item. 前記最下部付近にのみ第2の電極があることを特徴とする請求項4に記載の静電容量型電気機械変換装置。 The capacitive electromechanical transducer according to claim 4, wherein the second electrode is provided only in the vicinity of the lowermost part. 前記第2の電極の最下部付近に対向する部分にのみ前記第1の電極があることを特徴とする請求項4又は5に記載の静電容量型電気機械変換装置。 6. The capacitive electromechanical transducer according to claim 4, wherein the first electrode is provided only in a portion facing the vicinity of the lowermost portion of the second electrode.
JP2009253945A 2009-11-05 2009-11-05 Capacitance type electromechanical conversion device Pending JP2011101163A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013002207A1 (en) * 2011-06-27 2013-01-03 株式会社Ingen MSL Vibrating element and method for producing vibrating element
JP2013009234A (en) * 2011-06-27 2013-01-10 Ingen Msl:Kk Vibration element, and manufacturing method of vibration element
JP2013009233A (en) * 2011-06-27 2013-01-10 Ingen Msl:Kk Vibration element, and manufacturing method of vibration element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013002207A1 (en) * 2011-06-27 2013-01-03 株式会社Ingen MSL Vibrating element and method for producing vibrating element
JP2013009234A (en) * 2011-06-27 2013-01-10 Ingen Msl:Kk Vibration element, and manufacturing method of vibration element
JP2013009233A (en) * 2011-06-27 2013-01-10 Ingen Msl:Kk Vibration element, and manufacturing method of vibration element
US9564836B2 (en) 2011-06-27 2017-02-07 Seung-Mok LEE Transducer, and manufacturing method of the transducer

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