JP2011096430A - Heating device using heater - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heating device having no fear of fire using a semiconductor heater capable of being heated up to the maximum reaching temperature to which a semiconductor heater can be heated intrinsically, or higher, in the heating device using the semiconductor heater being easy for processing. <P>SOLUTION: In the heating device using the semiconductor heater, one or a plurality of linear semiconductor heaters 4 are inserted into a metal inner tube 3, and two or more of the inner tubes 3 where the semiconductor heaters 4 are internally inserted are stored in a metal outer tube 2. In this case, a thermal conductive material 5 is filled up between the outer tube 2 and the inner tube 3, or/and the inner tube 3 and the semiconductor heater 4, and a holder for coupling the inner tubes 3 with each other housed in the outer tube 2 may be mounted. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a heating device using a heater, and more specifically to a heating device using a semiconductor heater.

  The semiconductor heater is equipped with a thermistor having a positive temperature characteristic called PTC (positive temperature coefficient), and the temperature rises when energized, but at the same time it may rise beyond a certain temperature to make it difficult to pass current. It has the characteristic that it is not, and is also called a self-temperature control heater. Semiconductor heaters maintain a constant temperature with low power consumption, and are one of the heaters that have received the most attention in recent years, which emphasizes the effective use of energy.

  In the conventional semiconductor heater, as shown in FIG. 6, two conductors B are arranged in parallel, and a heating element C in which conductive carbon is mixed in a crosslinkable polymer having PTC characteristics is formed between them. Flat type semiconductor heater A was common. However, this flat type semiconductor heater consumes more power because it has a larger heat generation area than the round type described later, and it tends to cause fire when it comes in contact with it, and it is not easy to process because it is flat. I had a problem.

  Therefore, Patent Document 1 proposes a round self-temperature control heater (hereinafter referred to as “round semiconductor heater” for the sake of convenience) having a circular cross-sectional view. This round semiconductor heater is centered on a string-shaped core, around which two conductors B are arranged, an insulating material is arranged between the conductors B, and a conductive polymer having PTC characteristics is provided. These are provided around the core, and these are covered with an insulating coating layer in a circular shape to form a circular section with a small diameter. Thus, the problem that it was difficult to process the conventional flat semiconductor heater A was solved by making the self-temperature control heater a circular section having a small diameter.

  Patent Document 2 proposes a “semiconductor heat pipe” in which a semiconductor heater is enclosed in a metal pipe. This "semiconductor heat pipe" is a technology that has been proposed with the object of suppressing the generation of electromagnetic waves, but flexible semiconductor heaters have weaknesses that they are vulnerable to external forces and easily damaged. It also has the effect that this weakness can be overcome by enclosing it in a metal pipe.

JP 2007-173195 A JP 2001-248981 A

Although the round semiconductor heater of Patent Document 1 has an advantage that it is easy to process because it has a small-diameter circular cross section, the strength of the polymer, which is the main constituent material, is fragile and easily damaged. Must be installed in a protective tube. However, when this round semiconductor heater is housed in a protective tube, the surface of the protective tube is smaller than the temperature of the surface of the round semiconductor heater because the heat dissipation area is small because of the small diameter cross section, that is, the amount of heat generation is small. The temperature became extremely low, and the function as a heating device could not be exhibited effectively.
On the other hand, when this round semiconductor heater is installed directly under the floor without being housed in a protective tube, for example, the round semiconductor heater may be damaged and damaged by repeated loads. There was a risk of fire because the flooring was heated intensively.

Further, in Patent Document 2, a semiconductor heater is enclosed in a metal pipe, and there is an advantage that the semiconductor heater is protected and there is no risk of damage or the like. However, as described later, the semiconductor heater is simply inserted into the pipe. In the single tube type, it was found that the heat released from the semiconductor heater was greatly lost in the pipe, and as a result, the temperature did not rise sufficiently on the pipe surface. (Patent Document 2 also proposes a heat panel in which a large number of semiconductor heat pipes are arranged.)

  The subject of the present invention is to use a semiconductor heater that is easy to process, there is no risk of fire, and the semiconductor heater can be protected with a metal tube, and the heat radiation area of the protective tube is increased without losing much heat from the semiconductor heater. It is an object of the present invention to provide a heating device using a heater that can effectively increase the ambient temperature.

The heating device using the heater of the present invention is a heating device using a semiconductor heater, wherein one or more linear semiconductor heaters are inserted into a metal inner tube, and the semiconductor heater is inserted into a metal outer tube. Two or more internal tubes inserted are accommodated.

The heating device using a heater according to the present invention is the heating device using a heater according to claim 1, wherein a heat conductive material is filled between the outer tube and the inner tube or / and between the inner tube and the semiconductor heater. .

The heating device using a heater according to the present invention is the heating device using a heater according to claim 1 or 2, wherein a holder for connecting the inner tubes housed in the outer tube is attached.

The heating device using the heater of the present invention has the following effects.
(1) Since the heat released from the semiconductor heater is once stored in the outer tube and then radiated from the surface of the outer tube, the heat released from the semiconductor heater is efficiently increased without losing much heat. Can be made.
(2) As a result, power can be consumed efficiently.
(3) Since the semiconductor heater is protected by a metal inner tube and the outer periphery thereof is protected by a metal outer tube, the semiconductor heater is not damaged even if an unexpected load is applied. (4) Uses a metal double pipe, so there is no risk of fire.
(5) Since a linear semiconductor heater is used, it is easier to process than a so-called flat semiconductor heater.

The perspective view which shows the inside of the heating apparatus by the heater of this invention. (A) is sectional drawing of the heating apparatus by the heater of this invention. (B) is sectional drawing of the heating apparatus by the heater of this invention with which the heat conductive material was filled. (C) is sectional drawing of the heating apparatus by the heater of this invention with which the holder was attached. (A) is sectional drawing which shows the case where one semiconductor heater was directly accommodated in the outer periphery pipe | tube. (B) is sectional drawing which shows the case where one semiconductor heater was inserted in the inner pipe | tube, and this was accommodated in the outer periphery pipe | tube. (C) is a cross-sectional view showing a case in which one semiconductor heater is inserted into an inner tube, which is accommodated in the outer tube, and a gap portion of the outer tube is filled with a heat conductive material. (D) is sectional drawing which shows the case where the two internal pipe | tubes in which the semiconductor heater was inserted were accommodated in the outer peripheral pipe | tube. (E) is a cross-sectional view showing a case in which two inner tubes in which a semiconductor heater is inserted are accommodated in the outer tube, and a gap portion of the outer tube is filled with a heat conductive material. (F) is a cross-sectional view showing a case in which three outer tubes in which a semiconductor heater is inserted are accommodated in the outer tube, and a gap portion of the outer tube is filled with a heat conductive material. (A) is explanatory drawing which shows the conventional method grown while heating the ambient temperature of a plant. (B) is explanatory drawing which shows the method of cultivating, heating the surrounding temperature of a plant using the heating apparatus by the heater of this invention. (A) is sectional drawing which shows the method of performing load heating using the heating apparatus by the heater of this invention. (B) is a top view which shows the method of performing load heating using the heating apparatus by the heater of this invention. (C) is a partial detail top view which shows the method of performing load heating using the heating apparatus by the heater of this invention. The perspective view which shows the conventional flat type semiconductor heater.

(Embodiment)
An embodiment of a heating device using a heater according to the present invention will be described with reference to FIG. FIG. 1 is a perspective view showing the internal structure of the heating device 1. As shown in this figure, the heating apparatus 1 has a plurality of (three in the figure) internal tubes 3 accommodated in the outer peripheral tube 2, and a semiconductor heater 4 is inserted into each of the internal tubes 3. ing.

As shown in FIG. 2A, the semiconductor heater 4 has a circular cross section, and has a so-called linear (rope, string) shape whose length is extremely long with respect to the diameter of the cross section. . The semiconductor heater 4 is composed of a conductive wire and a heating element. The conductive wire is made of a material having high conductivity such as a copper wire, a silver wire, a gold wire, an aluminum wire, a platinum wire, an alloy wire, and various plated wires. Things are used.

The heating element is composed of a polymer having PTC characteristics and conductive carbon, and an insulating crosslinkable polymer is usually used for this polymer, and carbon black is used for the conductive carbon. The semiconductor heater 4 is formed by covering the outer periphery of the heating element and the conducting wire made of polymer and conductive carbon with a coating layer. As the material of the covering layer, Teflon (registered trademark) and a synthetic material of rubber, Teflon (registered trademark) and a synthetic material of silicon, and other silicon materials are used. Note that a commercially available semiconductor heater 4 can be used.

When the conducting wire of the semiconductor heater 4 is energized, electricity flows into the heat generating body through the conductive carbon, and at this time, the polymer having the PTC characteristic starts to rise in temperature. The polymer begins to expand as the temperature rises and pressurizes the current-carrying area of the conductive carbon. Finally, the conductive carbon cannot be energized, and the polymer does not rise any further. When the temperature of the polymer decreases, the polymer contracts and the conductive carbon energized area is restored, so that the temperature of the polymer rises again. Thus, the semiconductor heater 4 does not require special control and has a characteristic that it can keep a constant temperature, which is also called a self-temperature control heater.

The constant temperature to be maintained, in other words, the maximum temperature reached by the semiconductor heater 4 is determined by the standard of the semiconductor heater 4. For example, among the commercially available semiconductor heaters 4, those of 20 W / m are 55 ° C. and 30 W / m. Is 70 ° C., 90 ° C. at 40 W / m, and 130 ° C. at 50 W / m.

As shown in FIG. 1, the semiconductor heater 4 is inserted into a metal inner tube 3. The inner tube 3 is more preferably made of a material having a high thermal conductivity, and for example, an aluminum tube is suitable. The inner tube 3 needs an inner space that can accommodate the semiconductor heater 4. For example, when the outer diameter of the semiconductor heater 4 is 8 mm, the inner tube 3 needs to have an inner diameter of about 10 mm. In FIG. 1, one semiconductor heater 4 is inserted into the inner tube 3. However, the present invention is not limited to this, and a plurality of semiconductor heaters 4 can be inserted into the inner tube 3 having a large inner diameter.

The inner tube 3 in which the semiconductor heater 4 is inserted is further accommodated in the metal outer tube 2. In this case, if two or more internal tubes 3 in which the semiconductor heaters 4 are inserted are accommodated in the outer peripheral tube 2 (three in the figure), the heat storage effect in the outer peripheral tube 2 is dramatically increased as will be described later. improves. A general-purpose carbon steel pipe for general structure (commonly referred to as a single pipe pipe) can be used for the outer peripheral pipe 2, and the product cost can be reduced by using a general-purpose product. A typical single pipe has an inner diameter of 43.8 mm (outer diameter 48.6 mm), and can sufficiently accommodate three aluminum inner pipes 3 (outer diameter 12 mm). In addition, if the pipe | tube made from aluminum with high heat conductivity is used as the outer periphery pipe | tube 2, although the cost of a product will go up, the heat_generation | fever efficiency will improve and it can also be set as the heating apparatus 1 with higher performance.

As shown in FIG. 2A, even if the inner tube 3 in which the semiconductor heater 4 is inserted is accommodated, a gap remains in the outer tube 2. As shown in FIG. 2B, the gap portion can be filled (filled in) with the heat conductive material 5. Thereby, it can be expected that the heat radiation from the semiconductor heater 4 is more efficiently transmitted to the outer periphery of the outer tube 2 via the heat conducting material 5. As this heat conducting material 5, a material having high heat conductivity and capable of following the complicated shape of the gap in the outer peripheral tube 2 is suitable, and an aluminum nonwoven fabric is an example. In addition, steel slag and aluminum foil which is somewhat expensive can be used as the heat conductive material 5.

The heat conductive material 5 is not limited to the space inside the outer tube 2 but can be filled (filled) into the space remaining after the semiconductor heater 4 is inserted into the internal tube 3. This is particularly effective when the inner diameter of the inner tube 3 is relatively large compared to the outer diameter of the semiconductor heater 4.

Since a plurality of internal pipes 3 are accommodated in the outer peripheral pipe 2, the internal pipe 3 is inserted by the number of the internal pipes 3. In particular, when the pipe length of the outer peripheral pipe 2 is relatively long, repeating this insertion work takes time and effort, and as a result, increases the product cost. Or there is also a problem that the inner tube 3 inserted later is difficult to enter by bending, bending, or variously deforming the inner tube 3 inserted earlier. In such a case, the holder 6 can be attached to the inner tube 3 as shown in FIG. By connecting a plurality (three in the figure) of the inner pipes 3 with the holder 6, the distance between the inner pipes 3 is maintained (so-called spacer function), and the plurality of inner pipes 3 are bundled. Therefore, the insertion operation of the inner tube 3 can be completed once, and the troublesomeness that it is difficult to insert the subsequent inner tube 3 is eliminated.

The holder 6 can be attached with a gap to the axial direction of the inner tube 3 and can be made of resin or metal. The attachment to the inner tube 3 may be performed by welding when the holder 6 is made of metal, or by adhesion when the holder 6 is made of resin, or may be structured so as to hold the periphery of the inner tube 3 with an annular attachment portion. Good. In attaching the holder 6 to the inner tube 3, other conventional techniques may be used. As described above, the holder 6 is preferably attached before the inner tube 3 is inserted into the outer tube 2, but the holder 6 may be attached within the reach of the hand or jig after the inner tube 3 is inserted. .

(Verification of the heating device using the heater of the present invention)
The inventor of the present invention made a hypothesis that a heat storage effect can be expected when the semiconductor heater 4 is accommodated in a metal pipe, and repeated experiments by variously combining the semiconductor heater 4 and the metal pipe. As a result, when the semiconductor heater 4 is accommodated in a double tube form, a heat storage effect is exhibited, and when two or more internal tubes 3 having the semiconductor heater 4 inserted therein are accommodated in the outer tube 2, the heat storage effect is dramatically increased. The fact that the rise in the surface temperature of the outer peripheral tube 2 is remarkable as compared with other examples has been found. Hereinafter, the verification experiment will be described with reference to FIGS.

The following materials were used for the experiment.
・ Semiconductor heater 4: 40 W / m, outer diameter 8 mm, maximum temperature 90 ° C (surface temperature)
・ Inner tube 3: Aluminum, inner diameter is 10mm (outer diameter is 12mm)
-Outer pipe 2: Carbon steel pipe for general structure, inner diameter is 43.8 mm (outer diameter 48.6 mm)

FIG. 3A shows a case in which one semiconductor heater 4 is directly accommodated in the outer peripheral tube 2 without being inserted into the inner tube 3. This is case 1.
FIG. 3B shows a case in which one semiconductor heater 4 is inserted into the inner tube 3 and accommodated in the outer tube 2. This is case 2.
In FIG. 3C, a single semiconductor heater 4 is inserted into the inner tube 3 and accommodated in the outer tube 2, and a space inside the outer tube 2 is filled with an aluminum nonwoven fabric as the heat conductive material 5 ( This is a case filled. This is case 3.
FIG. 3D shows a case in which two inner pipes 3 in which the semiconductor heater 4 is inserted are accommodated in the outer pipe 2. This is referred to as Case 4.
FIG. 3 (e) shows that two inner pipes 3 in which semiconductor heaters 4 are inserted are accommodated in the outer pipe 2, and further, an aluminum non-woven fabric is filled as a heat conductive material 5 in the space inside the outer pipe 2 (inside Case). This is case 5.
FIG. 3 (f) shows that three inner tubes 3 in which the semiconductor heater 4 is inserted are accommodated in the outer tube 2, and the inner space of the outer tube 2 is filled with an aluminum nonwoven fabric as the heat conductive material 5 (inside Case). This is referred to as Case 6.

100V was applied to the semiconductor heater 4 in each of the six cases in a room temperature laboratory. After energization, the surface temperature of the semiconductor heater 4 becomes 90 ° C. In order to investigate how this heat propagates, the temperature was measured at the space inside the outer tube 2 and the surface of the outer tube 2. By measuring the temperature of the space inside the outer tube 2, the heat storage effect can be measured. The temperature measurement is about 50 minutes after energization. The results are shown in Table 1 below.

Looking at the results of case 1, the surface temperature of the semiconductor heater 4 has dropped to 45.5 ° C., even though the surface temperature of the semiconductor heater 4 has reached 90 ° C. This is considered that the heat released from the semiconductor heater 4 was largely lost inside the outer tube 2 before reaching the surface of the outer tube 2.

On the other hand, in the case 2 result, the surface temperature of the outer peripheral tube 2 was 52.3 ° C. and 72.5 ° C. rather than 45.5 ° C. of the case 1 although the semiconductor heater 4 was only inserted into the inner tube 3. It has risen by about ℃. Of particular note is the fact that the inside of the outer tube 2 has risen significantly from 78.6 ° C. (case 1) to 92.4 ° C. (case 2). This indicates that the heat storage effect is enhanced when the semiconductor heater 4 is inserted into the inner tube 3 and further covered with the outer tube 2 so as to form a so-called double tube.

Case 4 and case 5 are cases in which two inner tubes 3 are accommodated in the outer tube 2. From this, it can be seen that both the inside and the surface of the outer peripheral tube 2 are dramatically increased in temperature compared to the cases 2 and 3. Compared with the temperature rise from case 1 in case 2 (78.6 ° C. → 92.4 ° C. inside outer tube 2), the temperature rise from case 2 in case 4 (92.4 inside outer tube 2). It can be seen that (° C. → 120.7 ° C.) is extremely remarkable.

From the above results, it can be seen that when two inner pipes 3 in which the semiconductor heater 4 is inserted are accommodated in the outer pipe 2, the heat storage effect is dramatically improved. In addition, even when the case 4 (two internal pipes 3) and the case 6 (three internal pipes 3) were compared, there was no significant change in the temperature inside the outer peripheral pipe 2. In other words, the heat storage effect does not increase as the number of the inner pipes 3 accommodated in the outer peripheral pipe 2 increases, and a dramatic effect appears only when the number of the inner pipes 3 is increased from one to two. It proves that. That is, in order to exert a heat storage effect, the inner tube 3 in which the semiconductor heater 4 is inserted is accommodated in the outer tube 2, and a plurality of inner tubes 3 are accommodated in the outer tube 2. This proved to be an important technical element.

In addition, even when the case 4 (without the aluminum nonwoven fabric) and the case 5 (with the aluminum nonwoven fabric) were compared, there was no significant change in the surface temperature of the outer peripheral tube 2. It should be easier to transfer heat to the surface of the outer tube 2 if it is filled with a highly heat conductive aluminum nonwoven fabric, but the fact that there is no significant difference between the case 4 and the case where the aluminum nonwoven fabric is not filled is that This proves that it is equivalent to the heat conduction effect of the aluminum nonwoven fabric.

(Usage example 1 of heating device with heater)
A first use example of the heating device using the heater of the present invention will be described with reference to FIGS. 4 (a) and 4 (b). FIG.4 (b) shows the method of growing a plant using the heating apparatus by the heater of this invention.

Conventionally, when cultivating while heating the ambient temperature of the plant 7, as shown in FIG. 4 (a), a vinyl chloride tube (commonly known as a PVC tube) 9 is embedded in the culture soil 8 (culture solution). A warming method in which warm water of 15 to 18 ° C. was circulated was adopted. However, this conventional method requires a pressure device that circulates water in addition to a heater for turning water into hot water. As a result, there are many initial costs for equipment, fuel costs for operation of the equipment, maintenance costs, etc. Cost, which was a factor in raising the shipping price of plants.

As shown in FIG.4 (b), the heating apparatus 1 of this invention can be inserted in the polyvinyl chloride pipe | tube 9 in the culture soil 8, and it can grow, heating the surrounding temperature of the plant 7. As shown in FIG. According to this method, the fuel cost for operating the facility can be suppressed only to the power consumption without greatly changing the facility from the conventional method, and the shipping price of the plant can be reduced. Furthermore, it is possible to use solar power generation without relying on commercial power.

In addition, the standard of the semiconductor heater 4 used for the heating apparatus 1 can design the temperature to raise after considering various conditions, such as the plant to grow, a cultivation time, and the condition of a house, and can select it suitably.

(Usage example of heating device with heater 2)
A second usage example of the heating device using the heater of the present invention will be described with reference to FIGS. 5 (a) to 5 (c) show a method for performing load heating using the heater by the heater of the present invention.

Fig.5 (a) is sectional drawing which shows the state which installed the heating apparatus 1 under the road surface of asphalt pavement. A protective layer 11 for protecting the heating device 1 is arranged under the surface layer 10 of the asphalt pavement, and a plurality (eight rows in the figure) of the heating devices 1 are arranged at intervals of 10 cm, for example. This protective layer 11 is divided into three layers, the upper layer and the lower layer are constructed of concrete to resist wheel loads and the like, and the layer where the intermediate heating device 1 is arranged is constructed of a material with high thermal conductivity. . It is desirable to install a heat insulating sheet between the upper layer and the intermediate layer and between the lower layer and the intermediate layer.

The eight rows of heating devices 1 may be arranged independently in the protective layer 11 and individually energized. However, as shown in FIG. 5B, the outer tube 2 and the inner tube 3 are arranged. Although the semiconductor heaters 4 are arranged independently, the semiconductor heater 4 inserted into the inner tube 3 may be folded and used. In this case, there is an advantage of reducing the number of electrodes that are energized to the semiconductor heater 4.

Although the outer tube 2 and the inner tube 3 can also be folded, since it is metallic, it takes time to process, so only the semiconductor heater 4 is curved as shown in FIG. A bent and folded structure is desirable.

The heating device by the heater of the present invention is used as a heating facility for home use, public facilities such as workplaces, schools, municipal offices, factories, vehicles such as vehicles, passenger planes and ships, commercial facilities, health facilities, physical education facilities, It can be used as indoor heating equipment such as cattle barns, pig houses and poultry houses, zoos, aquariums, fish farms, swimming pools, and hot bath facilities.
In addition to road heating to prevent road freezing, it can be used as anti-freezing equipment for parking lots, railway platforms, quays, airfields, etc., and it can also be used as snow melting equipment for roofs.
In addition, it is used as a heating facility for greenhouses, orchards and botanical gardens for the cultivation of vegetables and flowers, or nurseries, and for drying cereals such as vegetables, fruits, flowers, meat, seafood, seaweed, rice and beans. It can be applied as various heating devices such as use as equipment.

DESCRIPTION OF SYMBOLS 1 Heating device 2 Outer peripheral pipe 3 Inner pipe 4 Semiconductor heater 5 Heat conduction material 6 Holder 7 Plant 8 Culture soil (culture liquid)
9 PVC pipe (PVC pipe)
10 Surface layer (of asphalt pavement) 11 Protective layer A Flat type semiconductor heater B Conductor C Heating element

Claims (3)

In a heating device using a semiconductor heater,
One or more linear semiconductor heaters are inserted into a metal inner tube,
A heating apparatus using a heater, wherein two or more internal tubes into which the semiconductor heater is inserted are accommodated in a metal outer tube. In the heating apparatus by the heater of Claim 1,
A heating device using a heater, wherein a heat conductive material is filled between the outer tube and the inner tube or / and between the inner tube and the semiconductor heater. In the heating apparatus by the heater of Claim 1 or Claim 2,
A heating device using a heater, wherein a holder for connecting the inner tubes housed in the outer tube is attached.

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